TW200609962A - Dielectric structure - Google Patents

Dielectric structure

Info

Publication number
TW200609962A
TW200609962A TW094125531A TW94125531A TW200609962A TW 200609962 A TW200609962 A TW 200609962A TW 094125531 A TW094125531 A TW 094125531A TW 94125531 A TW94125531 A TW 94125531A TW 200609962 A TW200609962 A TW 200609962A
Authority
TW
Taiwan
Prior art keywords
dielectric structures
disclosed
dielectric
dielectric structure
dopant
Prior art date
Application number
TW094125531A
Other languages
English (en)
Other versions
TWI268522B (en
Inventor
Maria Anna Rzeznik
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200609962A publication Critical patent/TW200609962A/zh
Application granted granted Critical
Publication of TWI268522B publication Critical patent/TWI268522B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0183—Dielectric layers
    • H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09509—Blind vias, i.e. vias having one side closed
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)
TW094125531A 2004-07-29 2005-07-28 Dielectric structure TWI268522B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59225904P 2004-07-29 2004-07-29

Publications (2)

Publication Number Publication Date
TW200609962A true TW200609962A (en) 2006-03-16
TWI268522B TWI268522B (en) 2006-12-11

Family

ID=36234293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125531A TWI268522B (en) 2004-07-29 2005-07-28 Dielectric structure

Country Status (5)

Country Link
US (1) US20060022304A1 (zh)
JP (1) JP2006093663A (zh)
KR (1) KR20060048971A (zh)
CN (1) CN1776842A (zh)
TW (1) TWI268522B (zh)

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US7244999B2 (en) * 2005-07-01 2007-07-17 Alps Electric Co., Ltd. Capacitor applicable to a device requiring large capacitance
KR100714580B1 (ko) * 2005-11-03 2007-05-07 삼성전기주식회사 박막 커패시터 내장된 인쇄회로기판 제조방법 및 그로부터제조된 인쇄회로기판
KR100649755B1 (ko) * 2005-11-07 2006-11-27 삼성전기주식회사 박막 커패시터 내장된 인쇄회로기판 및 그 제조방법
JP2007314366A (ja) * 2006-05-24 2007-12-06 Murata Mfg Co Ltd 薄膜形成用組成物及び誘電体薄膜
US8853116B2 (en) 2006-08-02 2014-10-07 Eestor, Inc. Method of preparing ceramic powders
US7993611B2 (en) 2006-08-02 2011-08-09 Eestor, Inc. Method of preparing ceramic powders using ammonium oxalate
US7998857B2 (en) 2007-10-24 2011-08-16 Intel Corporation Integrated circuit and process for fabricating thereof
JP5113544B2 (ja) * 2008-01-30 2013-01-09 新光電気工業株式会社 配線基板の製造方法
CN102132367B (zh) * 2008-08-26 2012-07-25 Nxp股份有限公司 电容器及其制造方法
WO2010088684A2 (en) * 2009-02-02 2010-08-05 Space Charge, LLC Capacitor using carbon-based extensions
US20100285316A1 (en) * 2009-02-27 2010-11-11 Eestor, Inc. Method of Preparing Ceramic Powders
JP5638216B2 (ja) * 2009-10-09 2014-12-10 パーパス株式会社 加圧循環培養装置及び加圧循環培養システム
FR3045036B1 (fr) * 2015-12-15 2017-12-22 Commissariat Energie Atomique Procede de preparation d'une solution sol-gel utilisable pour la preparation d'une ceramique de titanate de baryum dope par du hafnium et/ou par au moins un element lanthanide
CN107665879A (zh) * 2016-07-29 2018-02-06 奥特斯奥地利科技与***技术有限公司 器件载体及包括所述器件载体的电子***
JP7080579B2 (ja) * 2016-12-02 2022-06-06 凸版印刷株式会社 電子部品製造方法
JP6816486B2 (ja) * 2016-12-07 2021-01-20 凸版印刷株式会社 コア基板、多層配線基板、半導体パッケージ、半導体モジュール、銅張基板、及びコア基板の製造方法
JP6954208B2 (ja) * 2018-03-30 2021-10-27 Tdk株式会社 薄膜キャパシタ
US20200402720A1 (en) * 2019-06-20 2020-12-24 Intel Corporation Embedded thin film capacitor with nanocube film and process for forming such

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Also Published As

Publication number Publication date
TWI268522B (en) 2006-12-11
US20060022304A1 (en) 2006-02-02
CN1776842A (zh) 2006-05-24
JP2006093663A (ja) 2006-04-06
KR20060048971A (ko) 2006-05-18

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