TW200603310A - Methods of processing a substrate with minimal scalloping - Google Patents
Methods of processing a substrate with minimal scallopingInfo
- Publication number
- TW200603310A TW200603310A TW094109468A TW94109468A TW200603310A TW 200603310 A TW200603310 A TW 200603310A TW 094109468 A TW094109468 A TW 094109468A TW 94109468 A TW94109468 A TW 94109468A TW 200603310 A TW200603310 A TW 200603310A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing
- etching
- scalloping
- minimal
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55670704P | 2004-03-26 | 2004-03-26 | |
US10/882,036 US20050211668A1 (en) | 2004-03-26 | 2004-06-29 | Methods of processing a substrate with minimal scalloping |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200603310A true TW200603310A (en) | 2006-01-16 |
Family
ID=34988535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094109468A TW200603310A (en) | 2004-03-26 | 2005-03-25 | Methods of processing a substrate with minimal scalloping |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050211668A1 (zh) |
EP (1) | EP1728272A2 (zh) |
JP (1) | JP2007531280A (zh) |
KR (1) | KR20060135839A (zh) |
TW (1) | TW200603310A (zh) |
WO (1) | WO2005098917A2 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20070026682A1 (en) * | 2005-02-10 | 2007-02-01 | Hochberg Michael J | Method for advanced time-multiplexed etching |
US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
US8262920B2 (en) * | 2007-06-18 | 2012-09-11 | Lam Research Corporation | Minimization of mask undercut on deep silicon etch |
US8298958B2 (en) * | 2008-07-17 | 2012-10-30 | Lam Research Corporation | Organic line width roughness with H2 plasma treatment |
KR20120000612A (ko) | 2010-06-28 | 2012-01-04 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US8871105B2 (en) * | 2011-05-12 | 2014-10-28 | Lam Research Corporation | Method for achieving smooth side walls after Bosch etch process |
CN103159163B (zh) * | 2011-12-19 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法及基片处理设备 |
US9640371B2 (en) * | 2014-10-20 | 2017-05-02 | Lam Research Corporation | System and method for detecting a process point in multi-mode pulse processes |
CN110211870B (zh) * | 2019-06-18 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 晶圆减薄方法 |
CN112928070B (zh) * | 2021-03-19 | 2023-06-06 | 长鑫存储技术有限公司 | 存储器的制作方法及存储器 |
US11961735B2 (en) * | 2021-06-04 | 2024-04-16 | Tokyo Electron Limited | Cyclic plasma processing |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
DE4317623C2 (de) * | 1993-05-27 | 2003-08-21 | Bosch Gmbh Robert | Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung |
ATE251341T1 (de) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
DE19641288A1 (de) * | 1996-10-07 | 1998-04-09 | Bosch Gmbh Robert | Verfahren zum anisotropen Plasmaätzen verschiedener Substrate |
DE19706682C2 (de) * | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
DE19730644C1 (de) * | 1997-07-17 | 1998-11-19 | Bosch Gmbh Robert | Verfahren zum Erkennen des Übergangs unterschiedlicher Materialien in Halbleiterstrukturen bei einer anisotropen Tiefenätzung |
DE19734278C1 (de) * | 1997-08-07 | 1999-02-25 | Bosch Gmbh Robert | Vorrichtung zum anisotropen Ätzen von Substraten |
DE19736370C2 (de) * | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
US6576489B2 (en) * | 2001-05-07 | 2003-06-10 | Applied Materials, Inc. | Methods of forming microstructure devices |
US6818564B1 (en) * | 2001-12-20 | 2004-11-16 | Analog Devices, Inc. | Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate |
US6759340B2 (en) * | 2002-05-09 | 2004-07-06 | Padmapani C. Nallan | Method of etching a trench in a silicon-on-insulator (SOI) structure |
US7074723B2 (en) * | 2002-08-02 | 2006-07-11 | Applied Materials, Inc. | Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system |
US6924235B2 (en) * | 2002-08-16 | 2005-08-02 | Unaxis Usa Inc. | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
US20040097077A1 (en) * | 2002-11-15 | 2004-05-20 | Applied Materials, Inc. | Method and apparatus for etching a deep trench |
US7060624B2 (en) * | 2003-08-13 | 2006-06-13 | International Business Machines Corporation | Deep filled vias |
-
2004
- 2004-06-29 US US10/882,036 patent/US20050211668A1/en not_active Abandoned
-
2005
- 2005-03-23 KR KR1020067019957A patent/KR20060135839A/ko not_active Application Discontinuation
- 2005-03-23 EP EP05726044A patent/EP1728272A2/en not_active Withdrawn
- 2005-03-23 JP JP2007505106A patent/JP2007531280A/ja not_active Withdrawn
- 2005-03-23 WO PCT/US2005/009531 patent/WO2005098917A2/en not_active Application Discontinuation
- 2005-03-25 TW TW094109468A patent/TW200603310A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20050211668A1 (en) | 2005-09-29 |
EP1728272A2 (en) | 2006-12-06 |
KR20060135839A (ko) | 2006-12-29 |
WO2005098917B1 (en) | 2006-06-29 |
WO2005098917A3 (en) | 2006-05-11 |
WO2005098917A2 (en) | 2005-10-20 |
JP2007531280A (ja) | 2007-11-01 |
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