TW200603282A - Oxidizing method and oxidizing unit for object to be processed - Google Patents

Oxidizing method and oxidizing unit for object to be processed

Info

Publication number
TW200603282A
TW200603282A TW094108628A TW94108628A TW200603282A TW 200603282 A TW200603282 A TW 200603282A TW 094108628 A TW094108628 A TW 094108628A TW 94108628 A TW94108628 A TW 94108628A TW 200603282 A TW200603282 A TW 200603282A
Authority
TW
Taiwan
Prior art keywords
processing container
gas
oxidizing
processed
supplying
Prior art date
Application number
TW094108628A
Other languages
English (en)
Other versions
TWI364073B (zh
Inventor
Keisuke Suzuki
Toshiyuki Ikeuchi
Kimiya Aoki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200603282A publication Critical patent/TW200603282A/zh
Application granted granted Critical
Publication of TWI364073B publication Critical patent/TWI364073B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F5/00—Sewerage structures
    • E03F5/04—Gullies inlets, road sinks, floor drains with or without odour seals or sediment traps
    • E03F5/0401—Gullies for use in roads or pavements
    • E03F5/0405—Gullies for use in roads or pavements with an odour seal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F5/00—Sewerage structures
    • E03F5/04—Gullies inlets, road sinks, floor drains with or without odour seals or sediment traps
    • E03F5/06—Gully gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F5/00—Sewerage structures
    • E03F5/04—Gullies inlets, road sinks, floor drains with or without odour seals or sediment traps
    • E03F2005/0416—Gullies inlets, road sinks, floor drains with or without odour seals or sediment traps with an odour seal
    • E03F2005/0417—Gullies inlets, road sinks, floor drains with or without odour seals or sediment traps with an odour seal in the form of a valve
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Public Health (AREA)
  • Hydrology & Water Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094108628A 2004-03-24 2005-03-21 Oxidizing method and oxidizing unit for object to be processed TW200603282A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004087378 2004-03-24
JP2005032341A JP4609098B2 (ja) 2004-03-24 2005-02-08 被処理体の酸化方法、酸化装置及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200603282A true TW200603282A (en) 2006-01-16
TWI364073B TWI364073B (zh) 2012-05-11

Family

ID=35439660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108628A TW200603282A (en) 2004-03-24 2005-03-21 Oxidizing method and oxidizing unit for object to be processed

Country Status (4)

Country Link
US (2) US7304003B2 (zh)
JP (1) JP4609098B2 (zh)
KR (1) KR100935260B1 (zh)
TW (1) TW200603282A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
US8304328B2 (en) * 2006-03-20 2012-11-06 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
JP4899744B2 (ja) * 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
JP4386132B2 (ja) * 2007-02-14 2009-12-16 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
JP5383332B2 (ja) * 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
CN104520975B (zh) * 2012-07-30 2018-07-31 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
JP2019186335A (ja) * 2018-04-06 2019-10-24 東京エレクトロン株式会社 基板処理装置と基板処理方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155635A (en) * 1980-05-06 1981-12-01 Toshiba Corp Apparatus for oxide film growth in vacuum cvd process
JPS571232A (en) * 1980-06-04 1982-01-06 Mitsubishi Electric Corp Oxide film forming device
JPS6435929A (en) * 1987-07-31 1989-02-07 Hitachi Ltd Manufacture of semiconductor device
JP2902012B2 (ja) * 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
JPH0417727A (ja) * 1990-05-09 1992-01-22 Hino Motors Ltd ディーゼルエンジン
JPH0418727A (ja) 1990-05-11 1992-01-22 Kokusai Electric Co Ltd 縦型拡散装置
JP3373990B2 (ja) * 1995-10-30 2003-02-04 東京エレクトロン株式会社 成膜装置及びその方法
KR970072061A (ko) * 1996-04-16 1997-11-07 김광호 반도체 제조 공정에 사용되는 확산로
US6037273A (en) 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
JP3413174B2 (ja) * 1997-07-11 2003-06-03 アプライド マテリアルズ インコーポレイテッド Ｉｎ−ｓｉｔｕ蒸気生成方法及び装置
JPH11345777A (ja) * 1998-05-29 1999-12-14 Tokyo Electron Ltd 成膜装置
JP3415491B2 (ja) * 1999-06-24 2003-06-09 Ｎｅｃエレクトロニクス株式会社 シリコン窒化膜の成膜方法
KR100560867B1 (ko) * 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
DE10119741B4 (de) * 2001-04-23 2012-01-19 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
JP4792180B2 (ja) * 2001-07-31 2011-10-12 株式会社日立国際電気 半導体デバイスの製造方法、基板処理方法および基板処理装置
JP2003077845A (ja) * 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US6905963B2 (en) * 2001-10-05 2005-06-14 Hitachi Kokusai Electric, Inc. Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases
JP2003209063A (ja) 2001-11-08 2003-07-25 Tokyo Electron Ltd 熱処理装置および熱処理方法
JP4086146B2 (ja) * 2002-03-26 2008-05-14 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
JP3578155B2 (ja) * 2002-07-05 2004-10-20 東京エレクトロン株式会社 被処理体の酸化方法
JP3853302B2 (ja) * 2002-08-09 2006-12-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
KR100766196B1 (ko) * 2003-08-26 2007-10-10 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
JP4238812B2 (ja) * 2003-11-20 2009-03-18 東京エレクトロン株式会社 被処理体の酸化装置
US6869892B1 (en) 2004-01-30 2005-03-22 Tokyo Electron Limited Method of oxidizing work pieces and oxidation system
JP4586544B2 (ja) * 2004-02-17 2010-11-24 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体

Also Published As

Publication number Publication date
US20080056967A1 (en) 2008-03-06
JP4609098B2 (ja) 2011-01-12
TWI364073B (zh) 2012-05-11
KR20060044582A (ko) 2006-05-16
KR100935260B1 (ko) 2010-01-06
US20050272269A1 (en) 2005-12-08
US7926445B2 (en) 2011-04-19
JP2005311301A (ja) 2005-11-04
US7304003B2 (en) 2007-12-04

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