200535985 (1) * 九、發明說明 【發明所屬之技術領域】 本發明係有關基板洗淨裝置及基板洗淨方法；尤其， 有關對被施加有電漿處理之基板，去除附著於其背面之異 物的基板洗淨裝置及基板洗淨方法。 【先前技術】 通常，半導體裝置之製程中，對被處理體亦即半導體 晶圓（以下稱爲「晶圓」），係施加有蝕刻或濺鍍、CVD (化學氣相沉積）等，使用了電漿的處理（以下稱爲「電 漿處理」）。 例如，用以施加電漿處理之電漿處理裝置8 0 ’係如 第8圖所示，具備收容晶圓之圓筒形容器8 1 ;和配置於 該圓筒形容器8 1之內部，做爲放置晶圓之放置台的感受 器82 ;和向著晶圓被放置之面（以下稱爲「放置 面」），貫穿感受器82而配置的推進針83。感受器82’ 在放置面具有配置了連接於直流電源84之電極的靜電夾 85;更且其內部，具有連接於高頻電源86的下部電極87 (例如參考專利文件1 )。 電漿處理裝置8 0中，靜電夾8 5以靜電吸附力將晶圓 吸附於放置面後，對下部電極8 7施加高頻電力’在圓筒 形容器8 1內之上面和感受器82之間產生高頻電場’使被 導入圓筒形容器8 1內之處理氣體游離化而產生電漿。被 產生的電漿，會由配置於晶圓周圍而包圍之聚焦環（未圖 -4- 200535985 (2) . · 示）而集束於晶圓表面，來鈾刻晶圓表面形成的氧化膜。 又，施加了蝕刻處理的晶圓，會由推進針83自放置 面被抬起，藉由進入圓筒形容器81之純量（Scalar )臂 等搬運裝置（未圖示）而自圓筒形容器81被搬出。 電漿處理中產生的電漿中，沒有被集束至晶圓表面 者，會衝狀元筒形容器8 1之內壁而產生微粒。又，蝕刻 處理中會產生反應產生物。此等微粒和反應產生物，雖然 φ 幾乎都會以未圖示之排氣裝置而自圓筒形容器81被排 出，但留在圓筒形容器81內之一部分微粒或反應產生 物，會堆積於放置面。又，感受器82因電將等造成的微 粒也會堆積於放置面。此等堆積於放置面之微粒或反應產 生物，在晶圓被放置於放置面時，會成爲異物而附著於晶 圓背面。做爲去除此種附著於晶圓背面之微粒或反應產生 物的去除方法，已知有使用洗淨液等的濕洗淨。 又，做爲不使用洗淨液之方法，亦已知有在被推進針 φ 抬起之晶圓和放置面之間產生電漿，藉由所產生之電漿的 離子之濺鍍作用，或是自由離子之化學反應作用，而去除 晶圓背面之爲例的去除方法（例如參考專利文件2 )。 [專利文件1 ]曰本特開平5 _ 2 2 6 2 9 i號公報（第i圖） [專利文件2 ]美國專利第4 9 6 2 0 4 9號說明書（第2欄 第67行至第3欄第17行） 【發明內容】 發明所欲解決之課題 -5- 200535985 (3) · 然而，反覆洗淨晶圓之後，洗淨液會被污染。從而， 晶圓洗淨中會有因被污染之洗淨液所包含的微粒等，而污 染晶圓表面的問題。又，施加有蝕刻處理之晶圓，在之後 工程之室搬入等時，會有未被去除之微粒污染該室內部的 狀況。 又，以電漿去除晶圓背面之微粒時，被產生之電漿會 電晶圓扁面施加過度電漿處理，而損傷晶圓；例如，有對 φ 晶圓表面施加過度晶圓處理，而產生過度蝕刻的問題。 本發明之目的，係提供一種不會損傷基板，而可充分 去除附著於基板背面之異物的，基板洗淨裝置。 用以解決課題之手段 爲了達成上述目的，申請專利範圍第1項所記載之基 板洗淨裝置，其特徵係具備收容基板的收容室；和配置於 收容室內，放置上述基板的放置台；和配置於該放置台， φ 被施加電壓而將上述基板吸附於上述放置台的電極；和將 上述收容室內加以排氣的排氣裝置；和分離上述放置台及 上述基板，使上述放置台及上述基板之間產生空間的分離 裝置；和對上述空間供給氣體的氣體供給裝置；當上述空 間產生時，對上述電極施加電壓，上述氣體供給裝置會對 上述空間供給氣體，而上述排氣裝置則將上述收容室內排 氣。 申請專利範圍第2項所記載之基板洗淨裝置，係針對 申請專利範圍第1項所記載之基板洗淨裝置，其特徵爲更 -6 - (4) (4)200535985 具備在上述收容室內被減壓且產生上述空間時，將氣體導 入上述收容室內的氣體導入部者。 申請專利範圍第3項所記載之基板洗淨裝置，係針對 申請專利範圍第1項或第2項所記載之基板洗淨裝置，其 特徵爲上述電極係不連續的被施加電壓者。 申請專利範圍第4項所記載之基板洗淨裝置，係針對 申請專利範圍第3項所記載之基板洗淨裝置，其特徵爲上 述電極係被交互施加極性不同的電壓者。 申請專利範圍第5項所記載之基板洗淨裝置，係針對 申請專利範圍第4項所記載之基板洗淨裝置，其特徵爲上 述電壓之絕對値係在5 00V以上者。 申請專利範圍第6項所記載之基板洗淨裝置，係針對 申請專利範圍第5項所記載之基板洗淨裝置，其特徵爲上 述電壓之絕對値係在2kV以上者。 申請專利範圍第7項所記載之基板洗淨裝置，係針對 申請專利範圍第1項至第6項之任一項所記載之基板洗淨 裝置，其特徵爲上述排氣裝置在上述空間產生時，係保持 上述收容室內之壓力在133Pa以上者。 申請專利範圍第8項所記載之基板洗淨裝置，係針對 申請專利範圍第7項所記載之基板洗淨裝置，其特徵爲上 述排氣裝置在上述空間產生時，係保持上述收容室內之壓 力在1.3 3 X 1 03〜1.33xl04Pa的範圍者。 爲了達成上述目的，申請專利範圍第9項所記載之基 板洗淨裝置’其特徵係具備收容基板的收容室；和配置於 -Ί - 200535985 (5) 收谷室內’放置上述基板的放置台；和將上述收容室內加 以排氣的排氣裝置；和分離上述放置台及上述基板，使上 述放置台及上述基板之間產生空間，同時接觸上述基板並 對上述基板施加電壓的分離裝置；和對上述空間供給氣體 的氣體供給裝置；和將氣體導入上述收容室內的氣體導入 部；當上述空間產生時，對上述電極施加電壓，上述氣體 供給裝置會對上述空間供給氣體，而上述排氣裝置則將上 φ 述收容室內排氣’更且當上述收容室內被減壓且產生上述 空間時，上述氣體導入部會將氣體導入上述收容室內。 爲了達成上述目的，申請專利範圍第1 0項所記載之 基板洗淨方法，係去除附著於基板背面之異物的基板洗淨 方法；其特徵係具有將基板收容於收容室的收容步驟；和 將上述基板，放置於配置在上述收容室之放置台的放置步 驟；和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟；和當上述空間產生 Φ 時’對配置於上述放置台之電極施加電壓的電壓施加步 驟；和當上述空間產生時，對上述空間供給氣體的氣體供 給步驟；和當上述空間產生時，將上述收容室內排氣的排 氣步驟。 申請專利範圍第1 1項所記載之基板洗淨方法，係針 對申請專利範圍第1 0項所記載之基板洗淨方法，其特徵 爲更具備在上述收容室內被減壓且產生上述空間時，將氣 體導入上述收容室內的氣體導入步驟者。 申請專利範圍第1 2項所記載之基板洗淨方法，係針 -8- 200535985 (6) 對申請專利範圍第丨〇項或第11項所記載之基板洗淨方 法，其特徵爲上述電壓施加步驟中，係對上述電極不連續 的施加電壓者。 申請專利範圍第1 3項所記載之基板洗淨方法，係針 對申請專利範圍第1 2項所記載之基板洗淨方法，其特徵 爲上述電壓施加步驟中，係對上述電極交互施加極性不同 的電壓者。 φ 爲了達成上述目的，申請專利範圍第1 4項所記載之 基板洗淨方法，係去除附著於基板背面之異物的基板洗淨 方法；其特徵係具有將基板收容於收容室的收容步驟；和 將上述基板，放置於配置在上述收容室之放置台的放置步 驟；和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟；和當上述空間產生 時，對上述基板施加電壓的電壓施加步驟；和當上述空間 產生時，對上述空間供給氣體的氣體供給步驟；和當上述 φ 空間產生時，將上述收容室內排氣的排氣步驟；和當上述 收容室內被減壓且產生上述空間時，將氣體導入上述收容 室內的氣體導入步驟。 發明效果 若依申請專利範圍第1項所記載之基板洗淨裝置，當 放置台及基板之間產生空間時，因對配置於放置台的電極 施加電壓，故上述空間中會產生靜電場，而於基板之背面 作用有靜電性作用力。依此，附著於基板背面之異物會脫 - 9· 200535985 (7) 離。又，上述空間產生時，因對空間供給有氣體，而收容 室內被排氣，故空間中會產生氣流，因該氣流而脫離之幾 物會自空間被排除，進而自收容室被排氣。從而，基板洗 淨裝置可不損傷基板，而充分去除附著於基板背面之異 物。 若依申請專利範圍第2項所記載之基板洗淨裝置，當 收容室內被減壓時，因將氣體導入收容室內，故收容室內 φ 會產生行進衝擊波，以該衝擊波，使附著於基板背面之異 物脫離至空間中。從而，基板洗淨裝置可不損傷基板，而 充分去除附著於基板背面之異物。 若依申請專利範圍第3項所記載之基板洗淨裝置，因 對電極不連續的施加電壓，故對電極的電壓施加是反覆進 行。依此，基板之背面會反覆作用有靜電的作用力。從 而，可充分去除附著於基板背面之異物。 若依申請專利範圍第4項所記載之基板洗淨裝置，因 φ 交互施加有極性不同的電壓，故可防止基板帶電。若基板 帶電，藉由施加電壓而作用於基板背面的靜電性作用力會 變小。從而，藉由防止基板帶電，可防止附著於基板背面 之異物的去除效率低落。 若依申請專利範圍第5項所記載之基板洗淨裝置，因 空間產生時，施加於電極之電壓在5 00V以上，故可加大 作用於基板背面之靜電性作用力，而可確實的進行異物的 脫離。 若依申請專利範圍第6項所記載之基板洗淨裝置，因 -10- (8) (8)200535985 上述電壓在2 kV以上，故可更加大上述靜電性作用力。 若依申請專利範圍第7項所記載之基板洗淨裝置，因 排氣裝置將收容室內的壓力維持在1 3 3 P a以上，故在空間 中可產生氣體流阻力較大的阻力流。自基板背面脫離的異 物，會被捲入阻力流中，與收容室內的氣體一同自收容室 被排氣。從而，可確實去除附著於基板背面之異物。 若依申請專利範圍第8項所記載之基板洗淨裝置，因 排氣裝置會將收容室內之壓力保持在 1.33X103〜1.33χ 104Pa的範圍，故可在空間中確實產生阻力流。 若依申請專利範圍第9項所記載之基板洗淨裝置，當 放置台及基板之間產生空間時，因對配置於放置台的電極 施加電壓，故上述空間中會產生靜電場，而於基板之背面 作用有靜電性作用力。依此，附著於基板背面之異物會脫 離。更且，當空間產生且收容室內被減壓時，因將氣體導 入收容室內，故收容室內會產生行進衝擊波，以該衝擊 波，使附著於基板背面之異物脫離至空間中。又，上述空 間產生時，因對空間供給有氣體，而收容室內被排氣，故 空間中會產生氣流，因該氣流而脫離之異物會自空間被排 除，進而自收容室被排氣。從而，基板洗淨裝置可不損傷 基板，而充分去除附著於基板背面之異物。 若依申請專利範圍第1 0項所記載之基板洗淨方法， 當放置台及基板之間產生空間時，因對配置於放置台的電 極施加電壓’故上述空間中會產生靜電場，而於基板之背 面作用有靜電性作用力。依此，附著於基板背面之異物會 -11 - 200535985 Ο) 脫離。又，上述空間產生時，因對空間供給有氣體，而收 容室內被排氣，故空間中會產生氣流’因該氣流而脫離之 異物會自空間被排除，進而自收容室被排氣。從而，基板 洗淨裝置可不損傷基板，而充分去除附著於基板背面之異 物。 若依申請專利範圍第1 1項所記載之基板洗淨方法， 當空間產生且收容室內被減壓時，因將氣體導入收容室 內，故收容室內會產生行進衝擊波，以該衝擊波，使附著 於基板背面之異物脫離至空間中。從而，基板洗淨裝置可 不損傷基板，而充分去除附著於基板背面之異物。 若依申請專利範圍第1 2項所記載之基板洗淨方法， 因對電極不連續的施加電壓，故對電極的電壓施加是反覆 進行。依此，基板之背面會反覆作用有靜電的作用力。從 而，可充分去除附著於基板背面之異物。 若依申請專利範圍第1 3項所記載之基板洗淨方法， 因交互施加有極性不同的電壓，故可防止基板帶電。若基 板帶電，藉由施加電壓而作用於基板背面的靜電性作用力 會變小。從而，藉由防止基板帶電，可防止附著於基板背 面之異物的去除效率低落。 若依申請專利範圍第1 4項所記載之基板洗淨方法， 當放置台及基板之間產生空間時，因對配置於放置台的電 極施加電壓，故上述空間中會產生靜電場，而於基板之背 面作用有靜電性作用力。依此，附著於基板背面之異物會 脫離。更且，當空間產生且收容室內被減壓時，因將氣體 -12 - (10) (10)200535985 導入收容室內，故收容室內會產生行進衝擊波，以該衝擊 波，使附著於基板背面之異物脫離至空間中。又，上述空 間產生時，因對空間供給有氣體，而收容室內被排氣，故 空間中會產生氣流，因該氣流而脫離之異物會自空間被排 除，進而自收容室被排氣。從而，基板洗淨裝置可不損傷 基板，而充分去除附著於基板背面之異物。 【實施方式】 以下，參考圖示說明本發明之實施方式。 首先詳細說明本發明之第1實施方式中，做爲基板洗 淨裝置之電漿處理裝置。 第1圖中，做爲對晶圓W施加蝕刻處理之蝕刻處理 裝置而構成的電漿處理裝置1，係具有金屬製，例如鋁或 不銹鋼製的圓筒型室（收容室）1 0 ;該室1 〇內，配置有 做爲放置晶圓 W之平台的，圓柱狀感受器（放置台） 11° 室1 0之側壁和感受器1 1之間，形成有做爲將感受器 11上方之氣體，排出至室10之外之通路，而工作的排氣 通路1 2。此排氣通路1 2，中途配置有環狀的緩衝板1 3 ; 排氣通路】2中比緩衝板1 3更下游之空間，係連通於可變 式蝴蝶閥，亦即自動壓力控制閥（Automatic pressure control valve)(以下稱爲「APC」）14。APC14，係連 接於真空吸引用排氣泵，亦即渦輪分子泵（以下稱爲 「TMP」）1 5，更且經由TMP 1 5連接於乾泵（以下稱爲 -13- (11) (11)200535985 (1) * IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a substrate cleaning device and a substrate cleaning method; in particular, to a substrate to which plasma treatment is applied, removing foreign matter attached to its back surface Substrate cleaning device and substrate cleaning method. [Prior art] Generally, in the process of manufacturing a semiconductor device, etching or sputtering, CVD (chemical vapor deposition), etc. are applied to a processing object, that is, a semiconductor wafer (hereinafter referred to as a "wafer"). Plasma treatment (hereinafter referred to as "plasma treatment"). For example, as shown in FIG. 8, a plasma processing apparatus 80 ′ for applying a plasma treatment is provided with a cylindrical container 8 1 for accommodating a wafer, and is disposed inside the cylindrical container 81, and A susceptor 82 for a placement table on which a wafer is placed; and an advancement pin 83 disposed through the susceptor 82 toward a surface on which the wafer is placed (hereinafter referred to as a "placement surface"). The susceptor 82 'has, on the placement surface, an electrostatic clip 85 in which an electrode connected to a DC power source 84 is disposed; and further, a lower electrode 87 connected to a high-frequency power source 86 (for example, refer to Patent Document 1). In the plasma processing apparatus 80, the electrostatic clamp 85 is used to electrostatically adsorb the wafer to the placement surface, and then high-frequency power is applied to the lower electrode 87, between the upper surface of the cylindrical container 81 and the susceptor 82. The generation of a high-frequency electric field causes the processing gas introduced into the cylindrical container 81 to be ionized to generate a plasma. The generated plasma will be focused on the surface of the wafer by a focusing ring (not shown in Figure -4- 200535985 (2). ·) Arranged around the wafer to collect the oxide film formed on the surface of the wafer. In addition, the wafer to which the etching process has been performed is lifted from the placement surface by the push pin 83, and is described in a cylindrical form by a transport device (not shown) such as a scalar arm that enters the cylindrical container 81. The device 81 was carried out. Among the plasma generated in the plasma processing, those particles that are not bundled onto the wafer surface may be punched into the inner wall of the cylindrical container 81 to generate particles. In addition, reaction products are generated during the etching process. Although most of these particles and reaction products are discharged from the cylindrical container 81 by an exhaust device (not shown), a part of the particles or reaction products remaining in the cylindrical container 81 will accumulate in Place faces. In addition, the particles of the susceptor 82 due to electricity will also accumulate on the placement surface. Such particles or reaction products deposited on the placement surface become foreign matter when the wafer is placed on the placement surface and adhere to the back of the wafer. As a method for removing such particles or reaction products adhering to the back surface of a wafer, wet cleaning using a cleaning solution or the like is known. In addition, as a method that does not use a cleaning solution, it is also known to generate a plasma between the wafer lifted by the push pin φ and the placement surface, and by the ion sputtering of the generated plasma, or It is a chemical reaction of free ions, and an example of a removal method for removing the backside of a wafer (for example, refer to Patent Document 2). [Patent Document 1] Japanese Patent Publication No. 5 _ 2 2 6 2 9 i (Patent i) [Patent Document 2] US Patent No. 4 9 6 2 0 4 9 Specification (column 2 line 67 to 1) (Column 3, line 17) [Summary of the Invention] Problems to be Solved by the Invention-5-200535985 (3) However, after the wafer is repeatedly cleaned, the cleaning solution is contaminated. Therefore, during wafer cleaning, there is a problem that the surface of the wafer is contaminated by particles and the like contained in the contaminated cleaning solution. In addition, when the wafer to which the etching process is applied is moved into a process room afterwards, there is a case where the unremoved particles contaminate the interior of the room. In addition, when plasma is used to remove particles on the back of a wafer, the generated plasma will apply excessive plasma treatment to the flat surface of the wafer and damage the wafer; for example, excessive wafer treatment is applied to the φ wafer surface, and The problem of excessive etching occurs. An object of the present invention is to provide a substrate cleaning device which can sufficiently remove foreign matters adhering to the back surface of a substrate without damaging the substrate. Means for solving the problem In order to achieve the above-mentioned object, the substrate cleaning device described in the first patent application scope is characterized by including a receiving chamber for receiving the substrate; and a placement table disposed in the receiving chamber for placing the substrate; and At this placement table, φ is applied with a voltage to adsorb the substrate to the electrodes of the placement table; and an exhaust device for exhausting the storage chamber; and separating the placement table and the substrate, so that the placement table and the substrate are separated. A separation device that generates a space between them; and a gas supply device that supplies gas to the space; when the space is generated, a voltage is applied to the electrode, the gas supply device supplies gas to the space, and the exhaust device supplies the above Exhaust in the containment chamber. The substrate cleaning device described in item 2 of the scope of patent application is for the substrate cleaning device described in item 1 of the scope of patent application, and is characterized by more -6-(4) (4) 200535985 When the pressure is reduced and the space is generated, a gas is introduced into the gas introduction part in the storage room. The substrate cleaning device described in item 3 of the scope of patent application refers to the substrate cleaning device described in item 1 or 2 of the scope of patent application, characterized in that the electrodes are discontinuously applied with voltage. The substrate cleaning device described in item 4 of the scope of patent application refers to the substrate cleaning device described in item 3 of the scope of patent application, and is characterized in that the electrodes are alternately applied with voltages of different polarities. The substrate cleaning device described in item 5 of the scope of patent application refers to the substrate cleaning device described in item 4 of the scope of patent application, which is characterized in that the absolute voltage mentioned above is not more than 500V. The substrate cleaning device described in item 6 of the scope of the patent application is directed to the substrate cleaning device described in item 5 of the scope of the patent application, and is characterized in that the absolute value of the above voltage is not more than 2 kV. The substrate cleaning device described in item 7 of the scope of patent application refers to the substrate cleaning device described in any of items 1 to 6 of the scope of patent application, and is characterized in that the exhaust device is generated when the space is generated. , Is to keep the pressure in the above-mentioned containment chamber above 133Pa. The substrate cleaning device described in item 8 of the scope of the patent application is directed to the substrate cleaning device described in item 7 of the scope of the patent application, and is characterized in that the above-mentioned exhaust device maintains the pressure in the storage chamber when the space is generated in the space Those in the range of 1.3 3 X 1 03 to 1.33xl04Pa. In order to achieve the above-mentioned object, the substrate cleaning device described in item 9 of the scope of the application for patent has the characteristics of a storage room for storing substrates; and a placement table for placing the substrates in -Ί-200535985 (5) harvesting room; And an exhaust device for exhausting the above-mentioned storage room; and a separating device for separating the placement table and the substrate so as to create a space between the placement table and the substrate while contacting the substrate and applying a voltage to the substrate; and A gas supply device that supplies gas to the space; and a gas introduction unit that introduces gas into the storage chamber; when the space is generated, a voltage is applied to the electrode, the gas supply device supplies gas to the space, and the exhaust device Exhaust the above-mentioned storage room, and when the storage room is decompressed and the space is generated, the gas introduction unit will introduce gas into the storage room. In order to achieve the above object, the substrate cleaning method described in item 10 of the scope of patent application is a substrate cleaning method for removing foreign matter adhering to the back of the substrate; it is characterized by having a storage step of storing the substrate in a storage chamber; and The substrate is placed in a placement step of a placement table arranged in the storage room; and a separation step of separating the placement table and the substrate to create a space between the placement table and the substrate; and when the space generates Φ 'A voltage application step of applying a voltage to an electrode disposed on the placement table; and a gas supply step of supplying gas to the space when the space is generated; and an exhaust step of exhausting the storage room when the space is generated . The substrate cleaning method described in item 11 of the scope of the patent application is directed to the substrate cleaning method described in item 10 of the scope of the patent application. It is further characterized in that when the chamber is decompressed and the space is generated, A person who introduces a gas into the above-mentioned storage chamber. The method for cleaning substrates as described in item 12 of the scope of the patent application is a needle-8- 200535985 (6) The method for cleaning the substrates as described in the scope of the patent application in item 丨 0 or 11 is characterized in that the above voltage is applied In the step, a voltage is applied to the electrodes discontinuously. The substrate cleaning method described in item 13 of the scope of the patent application is directed to the substrate cleaning method described in item 12 of the scope of the patent application. It is characterized in that in the voltage applying step, the electrodes with different polarities are alternately applied to the electrodes. Voltage person. φ In order to achieve the above-mentioned purpose, the substrate cleaning method described in item 14 of the scope of patent application is a substrate cleaning method for removing foreign matter adhering to the back of the substrate; it is characterized by a storage step for storing the substrate in a storage room; and A step of placing the substrate on a placement table arranged in the storage chamber; and a step of separating the placement table and the substrate from a space between the placement table and the substrate; and when the space is generated A voltage applying step of applying a voltage to the substrate; and a gas supplying step of supplying gas to the space when the space is generated; and an exhausting step of exhausting the storage room when the φ space is generated; and When the storage room is decompressed and the space is generated, the gas is introduced into the gas introduction step of the storage room. ADVANTAGE OF THE INVENTION If according to the substrate cleaning device described in item 1 of the scope of the patent application, when a space is generated between the placement table and the substrate, an electrostatic field is generated in the above space because a voltage is applied to the electrodes arranged on the placement table, and An electrostatic force acts on the back surface of the substrate. According to this, foreign matter attached to the back of the substrate will come off-September 20052005985 (7). In addition, when the space is generated, air is supplied to the space and the storage room is exhausted. Therefore, an air flow is generated in the space, and objects detached by the air flow are excluded from the space and further exhausted from the storage room. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning device described in item 2 of the scope of the patent application, when the storage chamber is decompressed, because the gas is introduced into the storage chamber, a shock wave will be generated in the storage chamber φ, and the shock wave will be used to make the substrate attached to the back of the substrate Foreign matter escapes into space. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning device described in item 3 of the scope of patent application, because the voltage is applied to the electrodes discontinuously, the voltage applied to the electrodes is repeated. Accordingly, the back surface of the substrate will repeatedly exert an electrostatic force. As a result, foreign matter adhering to the back surface of the substrate can be sufficiently removed. According to the substrate cleaning device described in item 4 of the scope of the patent application, because φ alternately applies voltages of different polarities, the substrate can be prevented from being charged. When the substrate is charged, the electrostatic force applied to the back surface of the substrate by applying a voltage becomes smaller. Therefore, by preventing the substrate from being charged, it is possible to prevent the removal efficiency of the foreign matter adhering to the back surface of the substrate from decreasing. If the substrate cleaning device described in item 5 of the scope of the patent application is applied, the voltage applied to the electrode is more than 500V due to space generation, so the electrostatic force acting on the back of the substrate can be increased, and it can be performed reliably. Detachment of foreign bodies. According to the substrate cleaning device described in item 6 of the scope of the patent application, the above-mentioned electrostatic force can be increased because the above voltage is greater than 2 kV (10) (8) (8) 200535985. According to the substrate cleaning device described in item 7 of the scope of the patent application, because the exhaust device maintains the pressure in the storage chamber above 1 3 3 P a, a resistance flow having a large resistance to gas flow can be generated in the space. The foreign matter detached from the back surface of the substrate is drawn into the resistance flow and is exhausted from the storage chamber together with the gas in the storage chamber. Therefore, foreign matter adhering to the back surface of the substrate can be reliably removed. According to the substrate cleaning device described in item 8 of the scope of the patent application, the exhaust device will keep the pressure in the storage room in the range of 1.33X103 ~ 1.33χ 104Pa, so a resistance flow can be generated in the space. According to the substrate cleaning device described in item 9 of the scope of the patent application, when a space is generated between the placing table and the substrate, an electrostatic field is generated in the above space because a voltage is applied to the electrodes arranged on the placing table, and the substrate is placed on the substrate. The back side has an electrostatic force. As a result, foreign matter adhering to the back surface of the substrate is detached. Furthermore, when a space is generated and the containment chamber is decompressed, the gas is introduced into the containment chamber, so a traveling shock wave is generated in the containment chamber, and the foreign matter attached to the back of the substrate is released from the space by the shock wave. In addition, when the space is generated, air is supplied to the space and the storage room is exhausted. Therefore, an air flow is generated in the space, and foreign matter detached by the air flow is removed from the space, and is further exhausted from the storage room. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in Item 10 of the scope of the patent application, when a space is generated between the placement table and the substrate, an electrostatic field is generated in the above space because a voltage is applied to the electrodes disposed on the placement table. An electrostatic force acts on the back surface of the substrate. As a result, foreign matter adhering to the back of the substrate will be removed (-11-200535985 Ο). When the space is generated, the space is exhausted because gas is supplied to the space. Therefore, airflow generated in the space is generated. Foreign matter detached by the airflow is removed from the space, and exhausted from the storage room. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in item 11 of the scope of the patent application, when space is generated and the storage room is decompressed, gas is introduced into the storage room, so a shock wave will be generated in the storage room. Foreign matter on the back of the substrate escapes into the space. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in Item 12 of the scope of the patent application, the voltage is applied to the electrodes discontinuously, so the voltage application to the electrodes is repeated. Accordingly, the back surface of the substrate will repeatedly exert an electrostatic force. As a result, foreign matter adhering to the back surface of the substrate can be sufficiently removed. According to the substrate cleaning method described in item 13 of the scope of the patent application, because voltages of different polarities are alternately applied, the substrate can be prevented from being charged. If the substrate is charged, the electrostatic force applied to the back surface of the substrate by applying a voltage becomes small. Therefore, by preventing the substrate from being charged, it is possible to prevent the removal efficiency of the foreign matter adhering to the back surface of the substrate from decreasing. If according to the substrate cleaning method described in item 14 of the scope of the patent application, when a space is generated between the placement table and the substrate, an electrostatic field is generated in the above space because a voltage is applied to the electrodes arranged on the placement table, and the An electrostatic force acts on the back surface of the substrate. As a result, foreign matter adhering to the back surface of the substrate is detached. Furthermore, when the space is generated and the containment chamber is decompressed, since the gas -12-(10) (10) 200535985 is introduced into the containment chamber, a traveling shock wave will be generated in the containment chamber. The shock wave will be used to make foreign matters attached to the back of the substrate. Get out of space. In addition, when the space is generated, air is supplied to the space and the storage room is exhausted. Therefore, an air flow is generated in the space, and foreign matter detached by the air flow is removed from the space, and is further exhausted from the storage room. Therefore, the substrate cleaning device can sufficiently remove foreign matters adhering to the back surface of the substrate without damaging the substrate. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. First, a plasma processing apparatus as a substrate cleaning apparatus in the first embodiment of the present invention will be described in detail. In FIG. 1, a plasma processing apparatus 1 configured as an etching processing apparatus for applying an etching process to a wafer W has a cylindrical chamber (accommodation chamber) 1 0 made of metal, for example, aluminum or stainless steel; the Inside the chamber 10, a cylindrical susceptor (placement table) is provided as a platform for placing the wafer W. Between the side wall of the chamber 10 and the susceptor 11 is formed to discharge the gas above the susceptor 11 and exhaust it. To the path outside the chamber 10, and the exhaust path 12 to work. This exhaust passage 12 is provided with a ring-shaped buffer plate 1 3 in the middle; the space in the exhaust passage 2 downstream from the buffer plate 1 3 is connected to a variable butterfly valve, that is, an automatic pressure control valve ( Automatic pressure control valve (hereinafter referred to as "APC") 14. APC14 is connected to a vacuum suction exhaust pump, that is, a turbo molecular pump (hereinafter referred to as "TMP") 1 5 and further connected to a dry pump (hereinafter referred to as -13- (11) (11 )
200535985 「DP」）16。以下雖將 APC14、TMP15 及 DP16 排氣通路，稱爲「本排氣線路」，但此本排氣線 是藉由APC 14來進行室1〇內的壓力控制，亦藉 及DP 1 6將室1 0內減壓至幾乎成爲真空狀態。 又’上述排氣通路丨2中比緩衝板1 3更下游 連接有與本排氣線路不同的排氣通路（以下稱爲 路」）（排氣裝置）。此吸引線路，係連通於上 DP 1 6 ;具備直徑例如爲2 5 mm之排氣管1 7，和 氣管17之中圖的閥V2。此閥V2，可切斷上 D P 1 6。吸引線路係藉由d P 1 6，排出室1 0內的氣 感受器1 1 ’係經由整合器1 9，而電性連接 生用之高頻電源1 8。此高頻電源1 8，係將特定 例如13·56ΜΗζ之高頻電力，施加於感受器1 1。 受窃11會工作爲下部電極。 感受器11之內部上方，設置有爲了以靜電明 吸附晶圓W的，導電膜構成之圓板狀電極板2 0。 20，係電性連接於直流電源22。 晶圓W，係藉由自電源22施加於電極板20之 壓所產生的庫倫力，或是 Johnson-Rahbek力，而 保存於感受器Π的上面。又，矽（Si )等所構 狀聚焦環24，係使產生於感受器1 1之上方的電 晶圓W集束。 又，感受器1 ]之內部，例如設置有延伸於 的，環狀的冷媒室2 5。此冷媒室2 5中，係經由配 亍構成之 $並不只 TMP 1 5 L空間， 吸引線 〔空間和 ]置於排 :空間和 ‘電漿產 .局頻’ :此，感 :附力來 電極板 .直流電 被吸附 之圓環 ，向著 周方向 管26， -14 - (12) (12)200535985 自冷卻單元（未圖示）被供給有特定溫度之冷媒，例如冷 卻水；以該冷媒之溫度，來控制感受器1 1上晶圓W之處 理溫度。 感受器1 1上面吸附晶圓W之部分，開孔有複數導熱 氣體供給孔（氣體供給裝置）2 7。此等導熱氣體供給孔 2 7，係經由配置於感受器1 1內部之導熱氣體供給線路 28，連通於具有閥V3之導熱氣體供給管29，自連接於導 熱氣體供給管29之導熱氣體供給部（未圖示），將導熱 氣體例如He氣體，供給至感受器1 1之上面和晶圓W之 背面之間的間隙。依此，可提高晶圓W和感受器1 1之熱 傳導性。另外閥V3，可切斷導熱氣體供給孔27和導熱氣 體供給部。 又，感受器1 1上面吸附晶圓W之部分，做爲自感受 器1 1之上面自由突出的支撐針，係設置有複數推進針 (分離裝置）3 0。此等推進針3 〇，係藉由以球螺桿等將 馬達（未圖示）之旋轉運動改變爲直線運動，而移動於圖 中之上下方向。晶圓W被吸附保存於感受器11之上面 時，推進針3 0是被收容於感受器1 1 ;而施加蝕刻處理也 就是電漿處理結束之後的晶圓W，自室1 0被搬出時，推 進針30會自感受器11上面突出，使晶圓W自感受器11 分離而往上方抬起。此時，感受器Π之上面和晶圓W之 背面之間，形成有空間S。 室1 0之側壁，裝設有開關晶圓W之搬入搬出口 3 1 的閘閥3 2。又，室】〇之天花板部，配置有蓮蓬頭3 3來 -15- 200535985 (13) 做爲接地電位的上部電極。依此，來自高頻電源] 頻電源，會被施加於感受器1 1和蓮蓬頭3 3之間。 天花板部之蓮蓬頭3 3，係包含具有多數氣體 之下面的電極板3 5，和可裝卸地支撐該電極板3 5 支撐體36。又，該電極支撐體36之內部設置有 3 7，此緩衝室3 7連接有來自處理氣體供給部（未 的處理氣體導入管38。此處理氣體導入管38，中 | 有閥 V1。此閥 V1，可切斷緩衝室3 7和處理氣 部。又，室1 〇之周圍，配置有延伸爲環狀或同心 磁鐵3 9 〇 此電漿處理裝置1之室1 〇內，藉由磁鐵3 9而 著單一方向的水平磁場，同時藉由施加於感受器1 蓬頭33之間之高頻電壓，而形成垂直方向的RF 依此，室1 〇內會經由處理氣體進行磁控管放電’ 受器1 1之表面附近的處理氣體產生高密度電漿。 ^ 此電漿處理裝置1中，在蝕刻處理時，先使ft 爲開狀態將加工對象的晶圓w搬入室1 0內，而放 受器1 1上。然後藉由蓮蓬頭3 3，以特定之流量及 將處理氣體（例如特定流量比率之C4FS氣體、〇2 A r氣體所構成的混合氣體）導入室10內，再藉由 等將室10內之壓力做爲特定値。更且，藉由高頻1 對感受器1 1供給高頻電力，藉由直流電源22對 2 0施加直流電壓，而將晶圓W吸附於感受器1】 後，被蓮蓬頭3 3吐出之處理氣體會如上述搬被電 18之高 通氣孔 的電極 緩衝室 圖示） 途設置 體供給 圓狀的 形成向 1和蓮 電場； 而自感 5閥3 2 置於感 流量比 氣體及 APC 1 4 I源1 8 電極板 上。然 漿化。 -16- (14) 200535985 以此電漿所產生之自由基或離子，會被聚焦環24集束於 晶圓W之表面，而蝕刻晶圓W之表面。 上述之電漿處理裝置1中，被產生的電漿裡沒有被集 束至晶圓W表面者，會衝撞室10之內壁等而產生微粒。 所產生之微粒中，沒有被本排氣線路和吸引線路所排出的 微粒，會堆積於感受器1 1上。此堆積於上面的微粒，當 晶圓W被放置於感受器1 1上面時，會成爲異物而附著於 _ 晶圓W之背面。對此，電漿處理裝置1在對晶福W施加 蝕刻處理後，以推進針3 0將將圓W自感受器1 1上面分 離，而產生空間S時，係對電極板20施加高電壓，自導 熱氣體供給孔27對空間S供給N2氣體等，而室1 〇內藉 由吸引線路被排氣。更且，室1〇內以吸引線路減壓的期 間，會自蓮蓬頭3 3對室1 0內導入處理氣體。依此，附著 於晶圓 W背面之微粒會被排除。以下，說明電漿處理裝 置1中所執行，排除附著於晶圓W背面之微粒的基板洗 φ 淨方法。 第2圖，係第1圖之電漿處理裝置中所執行之基板洗 淨處理的程序圖。此基板洗淨處理，係對晶圓 W施加蝕 刻處理後執行。 第2圖中，執行本處理之先決條件，係晶圓W被施 加有蝕刻處理，且依然放置在感受器]1上面，電極板2 0 尙未被施加電壓（HV0) ，APC14打開（APC OPEN)且 TMP 1 5在動作，也就是室1 0內以本排氣線路來減壓（真 空吸引），而閥 V 1〜V3圍全部關閉（V ] CLOSE、V2 -17- (15) (15)200535985 CLOSE、 V3 CLOSE)的狀態。 首先，被收容於感受器1 1 ( PIN DOWN )之推進針 30，會將晶圓 W自感受器1 1分離而抬往上方（PIN UP )。此時推進針3 0將晶圓w自感受器1 1抬起的高 度，雖沒有特別限制，但以1 〇〜20mm爲佳。依此’感受 器1 1之上面和晶圓W之背面之間會形成空間s。 接著關閉APC14 ( APC CLOSE) ’打開排氣管17之 閥V2及導熱氣體供給管29之閥V3 ( V2 OPEN、V3 OPEN)，導熱氣體供給孔27向著被抬起之晶圓W之背 面，對空間S噴出N2氣體，而吸引線路則將對空間S噴 出之N2氣體，和殘存於是1 0內的氣體一同向外排出。依 此，空間S中會產生自.晶圓W背面向著感受.器1 1之外周 部流動，氣體流阻力較大的阻力流。此時，若室1 〇內是 在特定壓力以上，因爲容易產生阻力流，故吸引線路會使 室10內之壓力不低於例如133Pa ( 1 torr )地，理想上則 是使室1 〇內之壓力爲持在特定壓力範圍，例如維持在 1.33X103 〜1.33xl〇4pa(l〇 〜1〇〇 to rr)的範圍地，排出室 10內之N2氣體等。依此，可在空間S中確實產生阻力 流。阻力流會捲入後述自晶圓W之背面脫離的微粒，而 與室10內之氣體一同自室10被排出。 接著，直流電源22會對電極板20交互施加極性不同 之高電壓，例如+500V和-500V的電壓（HV +500V、 HV -5 00V )。此時，對電極板2〇施加高電壓造成室】〇 內，尤其在空間S產生靜電場，而於晶圓w之背面會作 -18- (16) (16)200535985 用有靜電性作用力，例如馬克斯威爾（Maxwell )作用 力。依此，附著於晶圓 w背面之微粒的附著力會變弱， 而該微粒會脫落。上述靜電性作用力，在對電極板2 0之 高電壓施加時和停止時，會有效的作用於晶圓w背面。 在此，電漿處理裝置1中因反覆進行對電極板20之高電 壓施加，故可有效的於晶圓w背面反覆作用有靜電性作 用力。從而，可充分去除附著於晶圓W背面之微粒。 對電極板2 0交互施加之電壓的絕對値，是較大者爲 佳；例如5 00V以上，而2kV以上較理想。依此，可增大 作用於晶圓 W背面之靜電性作用力，而可確實進行微粒 之脫離。 又，若對電極板20反覆施加相同極性之高電壓，電 極板2 0會帶電（充電）結果會減少作用於晶圓W背面之 靜電性作用力，而有降低附著於晶圓 W背面之微粒之去 除效率的情況。電漿處理裝置1中，因對電極板2 0交互 施加極性不同之高電壓，故電極板2 0不會帶電，而可防 止降低附著於晶圓W背面之微粒的去除效率。 另外如上所述，上述靜電性作用力的有效功用，有關 於對電極板2 0之高電壓施加次數，而不太關於對電極板 20之高電壓施加時間。從而，對電極板20之高電壓施加 時間只要是例如1秒以下即可。 上述中對電極板2 0交互施加極性不同之高電壓的期 間，處理氣體導入管38會打開閥VI (VI OPEN)，而自 蓮蓬頭3 3取代處理氣體的，將例如n2氣體導入室1 0 -19- (17) (17)200535985 內。此時，因室1 〇內被吸引線路減壓，故蓮蓬頭3 3之正 下方會產生急速的壓力上升；依此，被導入之N2氣體會 產生行進衝擊波，被產生的行進衝擊波會到達被抬起之晶 圓W。結果，晶圓W被施加衝擊力，使附著於晶圓W背 面之微粒脫離。此時，已脫離之微粒亦藉由上述阻力流， 自室1 〇向外排出。 另外，電漿處理裝置1中，爲了在N2氣體導入時有 效進行室10內蓮蓬頭33正下方的壓力上升，在處理氣體 導入管38中較閥 VI更下游，係不設置孔口（ Orifice) 構造，例如不設置流量控制裝置（流量控制器）或降速閥 者爲佳。 然後，處理氣體導入管3 8之閥 V1維持打開（V1 OPEN )，對電極板20之交互施加極性不同之高電壓的次 數，例如於圖中進行4次以後，關閉處理氣體導入管3 8 之閥 VI (VI CLOSE )，打開 APC14(APC OPEN)，同 時關閉排氣管17之閥V2及導熱氣體供給管29之閥V3 (V2 CLOSE、V3 CLOSE)，而結束本處理。 施加了上述基板洗淨處理之晶圓W，會經由搬入搬出 口 3 1自室1 0被搬出，而被搬入搬運室例如取放室 (Load-Lock);但因附著於晶圓W背面之微粒已經充分 被去除，故取放室內不會被微粒污染。 若依上述之基板洗淨方法，當感受器Π及晶圓w之 間產生空間S時，因對電極板2 0交互施加極性不同之高 電壓，故空間S中會產生靜電場，而於晶圓W之背面作 -20- (18) (18)200535985 用有靜電性作用力；更且，當空間S產生且以吸引線路將 室10內減壓時，因將n2氣體導入室10內，故室10內會 產生行進衝擊波，以被產生之行進衝擊波對晶圓 W施加 衝擊力。依此，附著於晶圓 W背面之微粒會脫離至空間 S。從而，微粒脫離並不需要電漿離子之濺鍍，或是自由 基之化學反應，而不會損傷晶圓W。 又，上述空間S產生時，因爲會自導熱氣體供給孔 27對空間S噴出N2氣體，該被噴出至空間S之N2氣體 會由吸引線路而被排出至室10外，故空間S中會產生n2 氣體的阻力流。已脫離之微粒，會被捲入上述阻力流中， 而自空間S被排出至室1 0外。 從而，不會損傷晶圓W，而可充分去除附著於晶圓W 背面之微粒。 上述之電漿處理裝置1中，雖然是藉由吸引線路，不 使室10內之壓力低過特定壓力地排出室10內之n2氣體 等，但亦可不使用吸引線路，藉由縮小APC 14之開量， 不使室1 〇內之壓力低過特定壓力地以本排氣線路排出室 1 〇內之n2氣體等；依此，亦可於空間S產生阻力流。 又，本發明不僅是構成爲蝕刻處理裝置的電漿處理裝 置，亦可適用於其他電漿處理裝置，例如構成爲CVD裝 置或灰化裝置的電漿處理裝置。 其次，詳細說明本發明第2實施方式中，做爲基板洗 淨裝置之電漿處理裝置。 第2實施方式中，做爲基板洗淨裝置之電漿處理裝 -21 - 200535985 (19) 置’係與第1實施方式相同，在以推進針4 0將晶圓W自 感受器11上面分離，而產生空間S時，會產生靜電場而 於晶圓W之背面作用有靜電性作用力；但與第1實施方 式不同的是，靜電場並非是對電極板20施加高電壓所引 起’而是由推進針4 0對晶圓W施加高電壓而引起。 第3圖，係表示第2實施方式中，做爲基板洗淨裝置 之電漿處理裝置，其推進針之槪略構成的圖。 φ 第3圖中，推進針40係導電體所構成的棒狀，接觸 於晶圓 W背面之一端成形爲半球狀，而另一端則電性連 接於直流電源4 1。又，推進針40之表面，爲了防止自該 表面放電，最好以介電質等覆蓋之；但半球狀之一端的表 面，爲了對晶圓 W施加高電壓，其導電體係，露出。推進 針4 0，係藉由以球螺桿等將馬達（未圖示）之旋轉運動 改變爲直線運動，而移動於圖中之上下方向。 又，複數推進針40是被配置在感受器1 1上面，吸附 φ 有晶圓W之部分。然後推進針40會自感受器1 1之上面 突起，將晶圓W自感受器1 1分離而抬往上方。此時，與 第1實施方式相同，感受器1 1上面和晶圓W背面之間會 形成空間S。 第2實施方式中，做爲基板洗淨裝置之電漿處理裝 置，其中所執行之基板洗淨方法，與第1實施方式的不同 點，在於取代了對電極板 2 0交互施加極性不同之高電 壓，而藉由推進針4 0對晶圓W交互施加極性不同之高電 壓者；但是空間S中會產生靜電場，於晶圓W背面作用 -22- (20) (20)200535985 有靜電性作用力，減低附著於晶圓W背面之微粒的附著 力，而使該微粒脫離者，則與第1實施方式相同。 更且，藉由推進針4〇對晶圓W施加之高電壓，例如 在5 00V以上，更理想是在2kV以上者，以及高電壓之施 加時間，以例如1秒以下爲佳者，與第1實施方式相同。 若依上述之基板洗淨方法，當感受器1 1及晶圓W之 間產生空間S時，因藉由推進針40對晶圓W交互施加極 性不同之高電壓，故空間S中會產生靜電場，而於晶圓W 之背面作用有靜電性作用力；更且，當空間S產生且以吸 引線路將室10內減壓時，因將N2氣體導入室10內，故 室1 〇內會產生行進衝擊波，以被產生之行進衝擊波對晶 圓W施加衝擊力。依此，附著於晶圓\\^背面之微粒會脫 離至空間S。從而，微粒脫離並不需要電漿離子之濺鍍， 或是自由基之化學反應，而不會損傷晶圓W。 又，上述空間S產生時，因爲會自導熱氣體供給孔 27對空間S噴出N2氣體，該被噴出至空間S之N2氣體 會由吸引線路而被排出至室1 〇外，故空間S中會產生N 2 氣體的阻力流。已脫離之微粒，會被捲入上述阻力流中， 而自空間S被排出至室1 0外。 從而，不會損傷晶圓W，而可充分去除附著於晶圓W 背面之微粒。 其次，詳細說明本發明之第3實施方式之基板洗淨裝 置。 第3實施方式之基板處理裝置，與上述第1及第2實 •23- (21) (21)200535985 "DP") 16. Although the APC14, TMP15, and DP16 exhaust passages are hereinafter referred to as "this exhaust line", this exhaust line uses APC 14 to control the pressure in chamber 10, and also uses DP 16 to vent the chamber. The pressure was reduced to almost a vacuum state within 10 minutes. Further, an exhaust passage (hereinafter referred to as a "path") (exhaust device) different from this exhaust line is connected to the exhaust passage 丨 2 further downstream than the buffer plate 1 3. This suction line is connected to the upper DP 1 6; it has an exhaust pipe 17 with a diameter of, for example, 25 mm, and a valve V2 in the middle of the air pipe 17. This valve V2 can cut off D P 1 6. The suction circuit is d P 1 6, and the air sensor 11 1 ′ in the exhaust chamber 10 is connected to the high-frequency power source 18 for electrical use via the integrator 19. The high-frequency power source 18 applies a high-frequency power of, for example, 13.56 MHz to the susceptor 11. Stolen 11 will work as the lower electrode. Above the inside of the susceptor 11, a disc-shaped electrode plate 20 made of a conductive film is provided for attracting the wafer W with electrostatic light. 20, is electrically connected to the DC power source 22. The wafer W is stored on the susceptor Π by a Coulomb force or a Johnson-Rahbek force generated by a pressure applied from the power source 22 to the electrode plate 20. Further, the focusing ring 24 formed of silicon (Si) or the like focuses the electric wafers W generated above the susceptor 11. In addition, inside the susceptor 1], for example, a ring-shaped refrigerant chamber 25 is provided, which extends to. In this refrigerant room 25, $ is not only the TMP 1 5 L space formed by distribution, the attraction line [space and] is placed in the row: space and 'plasma production. Bureau frequency': this, sense: affiliate Electrode plate. The ring to which the direct current is attracted is directed toward the peripheral tube 26, -14-(12) (12) 200535985 The self-cooling unit (not shown) is supplied with a specific temperature refrigerant, such as cooling water; Temperature to control the processing temperature of the wafer W on the susceptor 11. The portion of the susceptor 11 on which the wafer W is adsorbed has a plurality of heat conduction gas supply holes (gas supply devices) 2 7 in the opening. These heat-conducting gas supply holes 27 are connected to a heat-conducting gas supply pipe 29 having a valve V3 via a heat-conducting gas supply line 28 disposed inside the susceptor 11 1 (the heat-conducting gas supply section connected to the heat-conducting gas supply pipe 29 ( (Not shown), a thermally conductive gas such as He gas is supplied to the gap between the upper surface of the susceptor 11 and the rear surface of the wafer W. Accordingly, the thermal conductivity between the wafer W and the susceptor 11 can be improved. The valve V3 can cut off the heat-conducting gas supply hole 27 and the heat-conducting gas supply section. In addition, a part of the upper surface of the susceptor 11 that adsorbs the wafer W is provided as a support pin that protrudes freely from the upper surface of the susceptor 11 and is provided with a plurality of push pins (separating means) 30. These push pins 30 are moved in a vertical direction by changing the rotary motion of a motor (not shown) to a linear motion with a ball screw or the like. When the wafer W is adsorbed and stored on the susceptor 11, the advancement pin 30 is accommodated in the susceptor 1 1; and the wafer W after the etching process, that is, the end of the plasma process, is advanced from the chamber 10, the advancement pin 30 is advanced. 30 will protrude from the susceptor 11 so that the wafer W is separated from the susceptor 11 and lifted upward. At this time, a space S is formed between the upper surface of the susceptor Π and the rear surface of the wafer W. The side wall of the chamber 10 is provided with a gate valve 3 2 for carrying in and out the wafer W to and from the outlet 3 1. The ceiling of the room is equipped with a shower head 33 to -15- 200535985 (13) as the upper electrode of the ground potential. According to this, high-frequency power will be applied between the susceptor 11 and the shower head 3 3. The shower head 3 3 at the ceiling portion includes an electrode plate 3 5 having a lower surface having a large amount of gas, and a support body 36 detachably supporting the electrode plate 3 5. Also, 37 is provided inside the electrode support 36, and the buffer chamber 37 is connected to a process gas supply section (unprocessed gas introduction pipe 38. This process gas introduction pipe 38, middle | has a valve V1. This valve V1 can cut off the buffer chamber 37 and the processing gas part. Also, around the chamber 10, a ring-shaped or concentric magnet 3 9 is arranged. Inside the chamber 1 of the plasma processing apparatus 1, the magnet 3 9 and a horizontal magnetic field in a single direction, and a high-frequency voltage applied between the susceptor 1 and the head 33 to form a vertical RF. According to this, a magnetron discharge is performed in the chamber 10 through the processing gas. The processing gas near the surface of the reactor 11 generates a high-density plasma. ^ In this plasma processing apparatus 1, during the etching process, first turn ft to the on position, and move the wafer w to be processed into the chamber 10, and place The receiver 11 is 1. Then, through the shower head 3 3, the processing gas (such as a mixed gas composed of C4FS gas and 〇2 A r gas with a specific flow ratio) is introduced into the chamber 10 at a specific flow rate, and then Let the pressure in the chamber 10 be a specific chirp. Moreover, by the high frequency 1 The susceptor 11 is supplied with high-frequency power, and the DC power source 22 applies a DC voltage to 20 to adsorb the wafer W to the susceptor 1]. After that, the processing gas expelled from the shower head 3 3 will move the high vent hole of the electric power 18 as described above. The electrode buffer chamber is shown in the figure.) The round-shaped body is supplied in a circular shape to the 1 and lotus electric fields; and the self-inductive 5 valve 3 2 is placed on the electrode plate of the inductive flow ratio gas and APC 1 4 I source 1 8. Of course. -16- (14) 200535985 The free radicals or ions generated by this plasma will be focused on the surface of wafer W by the focusing ring 24, and the surface of wafer W will be etched. In the plasma processing apparatus 1 described above, those in which the generated plasma is not collected on the surface of the wafer W may collide with the inner wall of the chamber 10 and the like to generate particles. Among the generated particles, particles which are not discharged by the exhaust line and the suction line are accumulated on the susceptor 11. When the wafer W is deposited on the susceptor 11, the particles deposited on the upper surface become foreign matter and adhere to the back surface of the wafer W. In response, after the plasma processing apparatus 1 applies an etching process to the crystallized W, the circle W is separated from the susceptor 11 by the push pin 30, and when the space S is generated, a high voltage is applied to the electrode plate 20, and The heat-conducting gas supply hole 27 supplies N2 gas or the like to the space S, and the chamber 10 is exhausted by a suction line. Furthermore, during the decompression of the suction line in the chamber 10, a processing gas is introduced from the shower head 33 to the chamber 10. Accordingly, particles attached to the back surface of the wafer W are eliminated. Hereinafter, a substrate cleaning method φ performed by the plasma processing apparatus 1 to remove particles attached to the back surface of the wafer W will be described. Fig. 2 is a flowchart of a substrate cleaning process performed in the plasma processing apparatus of Fig. 1; This substrate cleaning process is performed after the wafer W is etched. In Figure 2, the prerequisite for performing this process is that the wafer W has been etched and is still placed on the susceptor] 1, the electrode plate 2 0 尙 is not applied with voltage (HV0), and APC14 is opened (APC OPEN) And TMP 1 5 is in operation, that is, decompression (vacuum suction) by the exhaust line in the chamber 10, and all the valves V1 ~ V3 are closed (V) CLOSE, V2 -17- (15) (15) 200535985 CLOSE, V3 CLOSE). First, the push pin 30 accommodated in the sensor 11 (PIN DOWN) will separate the wafer W from the sensor 11 and lift it upward (PIN UP). At this time, the height at which the push pin 30 is raised to lift the wafer w from the susceptor 11 is not particularly limited, but is preferably 10 to 20 mm. Accordingly, a space s is formed between the upper surface of the susceptor 11 and the rear surface of the wafer W. Then close APC14 (APC CLOSE) 'Open the valve V2 of the exhaust pipe 17 and the valve V3 (V2 OPEN, V3 OPEN) of the heat transfer gas supply pipe 29. The heat transfer gas supply hole 27 faces the back of the wafer W being lifted. The N2 gas is ejected from the space S, and the N2 gas ejected from the space S is exhausted together with the gas remaining in the space S10. Accordingly, in the space S, a resistance flow that flows from the back surface of the wafer W toward the outer periphery of the sensor 11 is generated, and the resistance of the gas flow is large. At this time, if the pressure in the chamber 10 is higher than a certain pressure, the resistance flow is likely to occur, so the suction line will make the pressure in the chamber 10 not lower than, for example, 133 Pa (1 torr), and ideally, the pressure in the chamber 10 The pressure is maintained in a specific pressure range, for example, the N2 gas in the chamber 10 is exhausted while maintaining the range of 1.33 × 103 to 1.33 × 104 Pa (10 to 100 Torr). Accordingly, a resistance flow can be surely generated in the space S. The resistance flow is entrained in particulates detached from the back surface of the wafer W, which will be described later, and is discharged from the chamber 10 together with the gas in the chamber 10. Next, the DC power source 22 alternately applies high voltages of different polarities to the electrode plate 20, for example, voltages of + 500V and -500V (HV + 500V, HV -500V). At this time, a high voltage is applied to the electrode plate 20 to cause an electrostatic field, especially in the space S, and the back of the wafer w will be used as -18- (16) (16) 200535985 with an electrostatic force. For example, Maxwell force. According to this, the adhesion of the particles attached to the back surface of the wafer w becomes weak, and the particles fall off. The electrostatic force described above effectively acts on the back surface of the wafer w when high voltage is applied to the electrode plate 20 and when it is stopped. Here, since the high voltage is applied to the electrode plate 20 repeatedly in the plasma processing apparatus 1, an electrostatic force can be effectively applied to the back surface of the wafer w repeatedly. Therefore, the particles adhering to the back surface of the wafer W can be sufficiently removed. The absolute value of the voltage applied to the electrode plate 20 alternately is preferably the larger one; for example, it is more than 500V, and more than 2kV is ideal. Accordingly, the electrostatic force acting on the back surface of the wafer W can be increased, and the particles can be reliably removed. In addition, if a high voltage of the same polarity is repeatedly applied to the electrode plate 20, the electrode plate 20 will be charged (charged), and as a result, the electrostatic force acting on the back surface of the wafer W will be reduced, and the particles attached to the back surface of the wafer W will be reduced. The removal efficiency. In the plasma processing apparatus 1, since a high voltage of a different polarity is applied to the electrode plate 20 alternately, the electrode plate 20 will not be charged, and the removal efficiency of particles attached to the back surface of the wafer W can be prevented from decreasing. In addition, as described above, the effective function of the electrostatic force is related to the number of times of high voltage application to the electrode plate 20, and not to the time of high voltage application to the electrode plate 20. Therefore, the high voltage application time to the electrode plate 20 may be, for example, 1 second or less. During the above-mentioned period in which high voltages of different polarities are alternately applied to the electrode plate 20, the processing gas introduction pipe 38 opens the valve VI (VI OPEN), and from the shower head 3 3 instead of the processing gas, for example, n2 gas is introduced into the chamber 1 0- 19- (17) (17) 200535985. At this time, because the suction line in the chamber 10 is decompressed, a rapid pressure rise will occur directly below the shower head 33; accordingly, the imported N2 gas will generate a traveling shock wave, and the generated traveling shock wave will reach the lift Wafer W. As a result, an impact force is applied to the wafer W, and the particles attached to the back surface of the wafer W are detached. At this time, the detached particles are also discharged from the chamber 10 by the above-mentioned resistance flow. In addition, in the plasma processing apparatus 1, in order to effectively increase the pressure directly below the shower head 33 in the chamber 10 during the introduction of N2 gas, the processing gas introduction pipe 38 is further downstream than the valve VI, and there is no orifice structure. For example, it is better not to set a flow control device (flow controller) or a speed reducing valve. Then, the valve V1 of the process gas introduction pipe 38 is kept open (V1 OPEN), and the number of times of applying a high voltage of different polarity to the interaction of the electrode plate 20, for example, after 4 times in the figure, the process gas introduction pipe 38 is closed. The valve VI (VI CLOSE) opens APC14 (APC OPEN), and at the same time closes the valve V2 of the exhaust pipe 17 and the valve V3 (V2 CLOSE, V3 CLOSE) of the heat-conducting gas supply pipe 29, and ends the processing. The wafer W to which the above-mentioned substrate cleaning process has been applied will be carried out from the chamber 10 through the carrying-in / outlet port 31, and will be carried into a carrying room such as a load-lock chamber; It has been fully removed, so the access chamber will not be polluted by particles. According to the substrate cleaning method described above, when a space S is generated between the susceptor Π and the wafer w, an electrostatic field is generated in the space S because a high voltage with a different polarity is applied to the electrode plate 20 alternately. The back of W is used as -20- (18) (18) 200535985. An electrostatic force is used; moreover, when the space S is generated and the pressure in the chamber 10 is reduced by the suction line, the n2 gas is introduced into the chamber 10, so A traveling shock wave is generated in the chamber 10, and an impact force is applied to the wafer W by the generated traveling shock wave. According to this, the particles attached to the back surface of the wafer W are detached to the space S. Therefore, the particle detachment does not require plasma ion sputtering or free radical chemical reaction without damaging the wafer W. When the space S is generated, N2 gas is ejected from the heat-conducting gas supply hole 27 to the space S, and the N2 gas ejected into the space S is discharged to the outside of the chamber 10 by the suction line, so the space S is generated n2 Resistance flow of gas. The detached particles are drawn into the above-mentioned resistance flow, and are discharged from the space S to the outside of the chamber 10. Therefore, the particles W attached to the back surface of the wafer W can be sufficiently removed without damaging the wafer W. In the plasma processing apparatus 1 described above, although the suction line is used to discharge the n2 gas in the chamber 10 without making the pressure in the chamber 10 lower than a specific pressure, the suction line can be used without reducing the pressure of the APC 14. The opening amount does not make the pressure in the chamber 10 lower than a specific pressure, and the n2 gas in the chamber 10 is exhausted by the exhaust line; according to this, a resistance flow can also be generated in the space S. The present invention is not only a plasma processing apparatus configured as an etching processing apparatus, but also applicable to other plasma processing apparatuses, such as a plasma processing apparatus configured as a CVD apparatus or an ashing apparatus. Next, a plasma processing apparatus as a substrate cleaning apparatus in the second embodiment of the present invention will be described in detail. In the second embodiment, the plasma processing device -21-200535985 (19) as the substrate cleaning device is the same as the first embodiment, and the wafer W is separated from the susceptor 11 with the push pin 40. When the space S is generated, an electrostatic field is generated and an electrostatic force acts on the back surface of the wafer W. However, unlike the first embodiment, the electrostatic field is not caused by applying a high voltage to the electrode plate 20. This is caused by the high voltage applied to the wafer W by the push pin 40. Fig. 3 is a diagram showing a schematic configuration of a pusher pin as a plasma processing apparatus as a substrate cleaning apparatus in the second embodiment. φ In Fig. 3, a rod-shaped conductor made of a 40-pin conductor is formed into a hemispherical shape at one end contacting the back surface of the wafer W, and the other end is electrically connected to a DC power source 41. The surface of the push pin 40 is preferably covered with a dielectric or the like in order to prevent discharge from the surface. However, the surface of one end of the hemisphere is exposed to the conductive system in order to apply a high voltage to the wafer W. Pushing the needle 40 moves the motor (not shown) to a linear motion by using a ball screw or the like, and moves it up and down in the figure. The plurality of push pins 40 are arranged on the susceptor 11 and suck the portion where the wafer W is located. Then, the pushing needle 40 will protrude from the top of the susceptor 11 to separate the wafer W from the susceptor 11 and lift it upward. At this time, as in the first embodiment, a space S is formed between the upper surface of the susceptor 11 and the rear surface of the wafer W. In the second embodiment, the plasma processing device used as the substrate cleaning device is different from the first embodiment in that the substrate cleaning method is performed in place of applying a high polarity to the electrode plate 20 alternately. Voltage, and the high voltage of different polarity is applied alternately to wafer W by pushing pin 40; however, an electrostatic field will be generated in space S, which will act on the back of wafer W-22- (20) (20) 200535985 has electrostatic properties The acting force reduces the adhesion of the particles adhered to the back surface of the wafer W, and the particles are detached, as in the first embodiment. Furthermore, the high voltage applied to the wafer W by the push pin 40 is, for example, 500 V or more, more preferably 2 kV or more, and the high voltage application time, for example, 1 second or less is preferred, and the first 1 embodiment is the same. According to the substrate cleaning method described above, when a space S is generated between the susceptor 11 and the wafer W, an electrostatic field is generated in the space S because a high voltage of different polarity is applied to the wafer W alternately by the push pin 40. There is an electrostatic force acting on the back of the wafer W. Furthermore, when the space S is generated and the inside of the chamber 10 is decompressed by the attracting line, the N2 gas is introduced into the chamber 10, so the chamber 10 will be generated. The traveling shock wave applies an impact force to the wafer W with the generated traveling shock wave. According to this, the particles attached to the back surface of the wafer will be detached to the space S. Therefore, the particle detachment does not require plasma ion sputtering or free radical chemical reaction, and does not damage the wafer W. When the space S is generated, N2 gas is ejected from the heat-conducting gas supply hole 27 to the space S, and the N2 gas ejected to the space S is discharged out of the chamber 10 by the suction line. A resistance flow of N 2 gas is generated. The detached particles are drawn into the above-mentioned resistance flow, and are discharged from the space S to the outside of the chamber 10. Therefore, the particles W attached to the back surface of the wafer W can be sufficiently removed without damaging the wafer W. Next, a substrate cleaning apparatus according to a third embodiment of the present invention will be described in detail. The substrate processing apparatus according to the third embodiment is the same as the first and second embodiments described above. 23- (21) (21)
200535985 施方式不同的點，是未對晶圓W施加電漿處理， 行晶圓W之背面之洗淨者。 第4圖，係表示本發明之第3實施方式之基枝 置之槪略構成的剖面圖。 第4圖中，基板洗淨裝置42係具有金屬製， 或不銹鋼至的箱型室43 ;該室43內，配置有放置 之圓柱狀平台44。 室43之側壁與平台44之間，形成有排氣通. 工作爲將平台44上方之氣體排出至室43外的通跑 氣通路65，係連接於吸引線路。此吸引線路，具 排氣通路65與排氣泵亦即DP46，直徑約25mm的 25 ;和配置於排氣管4 5中途的閥V 5。此閥V 5司 氣通路65和DP46。吸引線路則是以DP46排出g 的氣體。 平台44之內部上方，配置有爲了以靜電吸附 附晶圓W，由導電膜所構成的圓板狀電極板4 7 ; 4 7，係電性連接有直流電源4 8。晶圓W，係藉由 流電源4 8施加於電極板4 7之直流電壓所產生的 等，而被吸附保存在平台44的上面。 平台4 4上面吸附有晶圓W之部分，係開孔有 體供給孔49。此等氣體供給孔49，係經由配置於. 內部之氣體供給線路5 0，連通於具有閥v 6之氣體 6 4，將來自連接於氣體供給管6 4之第1氣體供給 圖示）的氣體，例如N2氣體，供給至平台44上面 而僅進 $洗淨裝 例如銘 :晶圓W 路65， k。此排 備連通 丨排氣管 ~切斷排 ! 43內 力來吸 電極板 以自直 庫倫力 複數氣 平台 44 供給管 部（未 和晶圓 -24- 200535985 (22) W背面之間。另外閥V 6，可切斷氣體供給孔4 9和第]氣 體供給部。 又，平台44上面吸附有晶圓W之部分，配置有自平 台44上面突出的複數針51。針51係抬起被搬入室43之 晶圓W，而自平台44分離。此時，平台44上面和晶圓w 背面之間會形成空間S。此等針5 1，亦可與推進針3 0同 樣的移動於圖中上下方向。 室43之側壁，安裝有開關晶圓W之搬入搬出口 52 的閘閥53。又，室43之天花板部，連接有將來自第2氣 體供給部（未圖不）的氣體’例如N2氣體，導入至室43 內的氣體導入管54。此氣體導入管54，中途設置有閥 V4。此閥V4，可切斷室43內和第2氣體供給部。 此基板洗淨裝置4 2，例如被配置於並聯型基板處理 系統，將具備該基板處理系統之後述電漿處理裝置5 6所 施加過電漿處理的晶圓W，其背面附著之微粒加以去除。 第5圖，係表示配置有第4圖之基板處理裝置之基板 處理系統，其槪略構成的圖。 第5圖中基板處理系統5 5，係具備由蝕刻處理晶圓 W之電漿處理裝置56，及配置有對該電漿處理裝置56收 送晶圓W之鏈結型單爪式搬運臂5 7的取放室5 8，所構成 的處理艇（P 1. 〇 c e s s s h i p ) 5 9 ;和收容可收取1批份量之 晶圓W的載具盒的，裝載埠6 0 ;和預先對準晶圓w的， 對準器6 1 ;和上述之基板洗淨裝置4 2 ;和一種矩形之共 通搬運通路，爲配置有純量型雙臂式搬運臂62的載運模 -25- (23) (23)200535985 組63。處理艇59、裝載埠60、對準器61及基板洗淨裝 置42，雖是可裝卸的連接於載運模組63，但基板洗淨裝 置42是經由載運模組63與對準器6 1相對地，被配置於 在載運模組63之長邊方向的一端。 此基板處理系統5 5中，於電漿處理裝置5 6被施加了 電發處理的晶圓W，係藉由取放室58內之搬運臂57»及 載運模組63內之搬運臂62，而被搬入基板洗淨裝置42。 基板洗淨裝置42，係執行後述之基板洗淨方法，來去除 附著於晶圓W背面的微粒。 以下，說明基板洗淨裝置42中所執行的基板洗淨方 法。 執行此基板洗淨方法的先決條件，係晶圓W被施加 有蝕刻處理，且依然被放置在平台44上面，電極板47未 施加有電壓，而閥V4〜V6爲全部關閉的狀態。 首先將被搬入至室43之晶圓W，放置於自平台44上 面突出的針5 1。此時，針5 1將晶圓W自平台44抬起的 高度，與第1實施方式相同，以10〜2 0mm爲佳。依此， 平台4 4上面和晶圓W背面之間，會形成空間S。 接著關閉閘閥5 3，同時打開排氣管4 5之閥V 5及氣 體供給管64之閥V6，氣體供給孔49向著被抬起之晶圓 W背面，對空間S噴出N2氣體’而吸引線路將被噴出至 空間S之N2氣體排出至室43之外。依此’空間S中，會 產生自晶圓W背面向平台44之外周部流動的N2氣體阻 力流。此時，與第1實施方式相同’吸引線路使室4 3內 -26- (24) (24)200535985 之壓力不低於特定壓力地，排出室43內的N2氣體等即 可。阻力流會捲入後述自晶圓 W背面脫離之微粒，而自 室4 3被排出。 接著，直流電源4 8對電極板4 7交互施加極性不同的 高電壓。此時空間S中會產生靜電場，靜電性作用力會作 用於晶圓W背面，降低附著於晶圓W背面之微粒的附著 力；該微粒之脫離，和第1實施方式相同。然後脫離後之 微粒，會藉由上述阻力流，而自空間S被排出至室4 3 外。 更且，對電極板47施加之高電壓，例如在500V以 上，更理想是在2kV以上者，以及高電壓之施加時間， 以例如1秒以下爲佳者，與第1實施方式相同。 上述中對晶圓 W交互施加極性不同之高電壓的期 間，氣體導入管54會打開閥V4，而自氣體導入管54將 例如N2氣體導入室43內。此時，因室1 0內被吸引線路 減壓，故室43之天花板部之正下方會產生急速的壓力上 升，被導入之N2氣體會產生行進衝擊波，被產生的行進 衝擊波會對晶圓W施加衝擊力；而附著於晶圓W背面之 微粒脫離，與第1實施方式相同。此時，脫離後之微粒， 亦會藉由上述阻力流，而自空間S被排出至室43外。另 外基板洗淨裝置42中，與第1實施方式相同，以在氣體 導入管5 4中較閥 V4更下游之部分，設置孔口構造爲 佳。The difference in the 200535985 method is that the plasma W is not applied to the wafer W, and the back surface of the wafer W is cleaned. Fig. 4 is a cross-sectional view showing a schematic configuration of a basic arrangement of a third embodiment of the present invention. In FIG. 4, the substrate cleaning device 42 has a box-shaped chamber 43 made of metal or stainless steel. A cylindrical platform 44 is placed in the chamber 43. An exhaust passage is formed between the side wall of the chamber 43 and the platform 44. A ventilation path 65 for exhausting the gas above the platform 44 to the outside of the chamber 43 is connected to the suction line. This suction line has an exhaust passage 65 and an exhaust pump, that is, DP46, 25 with a diameter of about 25 mm; and a valve V 5 disposed in the middle of the exhaust pipe 45. This valve V 5 uses air passages 65 and DP46. The suction line is to discharge g of gas with DP46. Above the inside of the platform 44 is arranged a disk-shaped electrode plate 4 7; 4 7 made of a conductive film for electrostatically attaching the wafer W. A DC power supply 48 is electrically connected. The wafer W is generated by a DC voltage applied to the electrode plate 47 by the current source 48, and is held on the platform 44 by suction. The portion on the platform 4 4 to which the wafer W is adsorbed is provided with a body supply hole 49. These gas supply holes 49 are connected to a gas 6 4 having a valve v 6 through a gas supply line 50 disposed inside the gas supply gas, and the gas from the first gas supply pipe 6 4 connected to the gas supply pipe 6 is shown) For example, N2 gas is supplied to the platform 44 and is only cleaned. For example, the wafer W path 65, k. This row is connected 丨 Exhaust pipe ~ cut row! 43 Internal force is used to suck the electrode plate from the straight Coulomb force multiple gas platform 44 Supply pipe section (not between the back of wafer-24-200535985 (22) W. In addition to the valve V6 can cut off the gas supply hole 49 and the first gas supply unit. In addition, a portion of the wafer 44 on which the wafer W is adsorbed is provided with a plurality of needles 51 protruding from the upper surface of the platform 44. The needle 51 is lifted and carried in The wafer W in the chamber 43 is separated from the platform 44. At this time, a space S is formed between the upper surface of the platform 44 and the back surface of the wafer w. These pins 51 can also be moved in the figure in the same manner as the push pins 30. Vertical direction. On the side wall of the chamber 43, a gate valve 53 for loading and unloading the wafers W to be carried in and out 52 is installed. The ceiling of the chamber 43 is connected to a gas such as N2 from a second gas supply unit (not shown). The gas is introduced into the gas introduction pipe 54 in the chamber 43. This gas introduction pipe 54 is provided with a valve V4 in the middle. This valve V4 can cut off the inside of the chamber 43 and the second gas supply unit. This substrate cleaning device 4 2, For example, it is arranged in a parallel substrate processing system, and the plasma processing system will be provided later. Particles adhering to the back of the plasma treated wafer W applied to the processing device 56 are removed. FIG. 5 is a diagram showing a schematic configuration of a substrate processing system in which the substrate processing device of FIG. 4 is arranged. The substrate processing system 55 in FIG. 5 includes a plasma processing device 56 for processing wafers W by etching, and a chain-type single-claw-type transfer arm 5 configured to send and receive wafers W to the plasma processing device 56. 7 pick-and-place chamber 5 8, a processing boat (P 1.0 〇cessship) 5 9; and a carrier box that can receive 1 batch of wafers W, loading port 60; and pre-aligned crystals A circle w, an aligner 6 1; and the above-mentioned substrate cleaning device 4 2; and a rectangular common conveying path, which is a carrier mold equipped with a scalar two-arm type conveying arm 62-(23) ( 23) 200535985 Group 63. Although the processing boat 59, loading port 60, aligner 61 and substrate cleaning device 42 are detachably connected to the carrier module 63, the substrate cleaning device 42 is The aligner 61 is oppositely disposed at one end in the longitudinal direction of the carrier module 63. In this substrate processing system 55, the The wafer W to which the electric processing is applied to the slurry processing device 56 is carried into the substrate cleaning device 42 by the transfer arm 57 »in the pick-and-place chamber 58 and the transfer arm 62 in the carrier module 63. Substrate The cleaning device 42 performs a substrate cleaning method described later to remove particles attached to the back surface of the wafer W. Hereinafter, the substrate cleaning method performed by the substrate cleaning device 42 will be described. Prerequisites for executing this substrate cleaning method As a condition, the wafer W is subjected to an etching process and is still placed on the stage 44. No voltage is applied to the electrode plate 47, and the valves V4 to V6 are all closed. First, the wafer W carried into the chamber 43 is placed on a needle 51 protruding from the upper surface of the table 44. At this time, the height at which the needle W 1 lifts the wafer W from the stage 44 is the same as that of the first embodiment, and preferably 10 to 20 mm. Accordingly, a space S is formed between the upper surface of the platform 44 and the rear surface of the wafer W. Then close the gate valve 5 3, and simultaneously open the valve V 5 of the exhaust pipe 45 and the valve V 6 of the gas supply pipe 64. The gas supply hole 49 faces the back of the lifted wafer W, and ejects N 2 gas into the space S to attract the line. The N 2 gas ejected into the space S is discharged out of the chamber 43. Accordingly, in the space S, a N2 gas resistance flow is generated which flows from the back surface of the wafer W to the outer periphery of the stage 44. At this time, the suction line is the same as that of the first embodiment so that the pressure in the chamber 4 3 -26- (24) (24) 200535985 is not lower than a specific pressure, and N2 gas or the like in the chamber 43 may be discharged. The resistance flow is involved in the particles that are detached from the back surface of the wafer W described later, and is discharged from the chamber 43. Next, the DC power source 48 alternately applies high voltages with different polarities to the electrode plates 47. At this time, an electrostatic field is generated in the space S, and an electrostatic force is applied to the back surface of the wafer W to reduce the adhesion of the particles attached to the back surface of the wafer W. The detachment of the particles is the same as in the first embodiment. The detached particles are then discharged from the space S to the outside of the chamber 4 3 by the above-mentioned resistance flow. The high voltage applied to the electrode plate 47 is, for example, 500 V or more, more preferably 2 kV or more, and the high voltage application time is preferably 1 second or less, which is the same as the first embodiment. While the high voltages of different polarities are alternately applied to the wafer W in the above, the gas introduction pipe 54 opens the valve V4, and the N2 gas is introduced into the chamber 43 from the gas introduction pipe 54, for example. At this time, because the suction line in the chamber 10 is decompressed, a rapid pressure rise occurs directly below the ceiling portion of the chamber 43. The introduced N2 gas will generate a traveling shock wave, and the generated traveling shock wave will affect the wafer W. An impact force is applied, and the particles attached to the back surface of the wafer W are detached, as in the first embodiment. At this time, the separated particles are also discharged from the space S to the outside of the chamber 43 by the above-mentioned resistance flow. The substrate cleaning device 42 is the same as the first embodiment, and it is preferable to provide an orifice structure in a portion of the gas introduction pipe 54 downstream of the valve V4.
然後，氣體導入管54之閥V4依然打開，對晶圓W -27- (25) (25)Then, the valve V4 of the gas introduction pipe 54 is still opened, and the wafer W -27- (25) (25)
200535985 施加特定次數的極性不同之高電壓之後，關閉氣儀 54之閥V4、排氣管45之閥V5及氣體供給管 V6，而結束本處理。施加有上述之基板洗淨處理 W，會經由搬入搬出口 52自室43被搬出，而被捥 模組63或裝載璋60 ;但因附著於晶圓W背面之棵 分去除，故載運模組63或裝載埠60內不會被微粒 若依上述之基板洗淨方法，當平台44極晶圓 形成空間S時，因對晶圓W交互施加有極性不同 壓，故上述空間S中會產生靜電場，而於晶圓W 用有靜電性作用力；更且，上述空間S產生且以I® 來減壓室43內時，因室43內導入有N2氣體，故: 會產生行進衝擊波，被'產生的行進衝擊波會對晶B 加衝擊力。依此，附著於晶圓W背面之微粒會脫 間 S中。從而，微粒脫離不需要電漿，而不會損 W 〇 又，上述空間S產生時，因自氣體供給孔49 S噴出N2氣體，而吸引線路將被噴出至空間S之 排出至室43之外，故空間S中會產生N2氣體阻力 離後之微粒會被捲入上述阻力流，而自空間S被排 43外。 從而不會損傷晶圓W，而可充分去除附著於 背面之微粒。 上述之基板洗淨裝置4 2中，基板洗淨裝置4 2 具備有D P 4 6，但亦可使基板洗淨裝置4 2及電漿處 I導入管 64之閥 丨的晶圓 Ϊ入載運 !(粒被充 污染。 W之間 j的高電 背面作 :引線路 事43內 0 W施 離至空 傷晶圓 對空間 n2氣體 流。脫 出至室 晶圓w 雖獨自 理裝置 -28- (26) 200535985 5 6共用DP ;依此，可簡單化基板處理系統5 5的構造。 上述之實施方式中，雖說明了電漿處理裝置做爲基板 洗淨裝置而工作的情況，或是設置專用之基板洗淨裝置的 情況，但構成基板處理系統之其他裝置，亦可做爲本發明 之基板洗淨裝置來工作。 例如，取放室做爲本發明之基板處理裝置而工作時， 該取放室具備搬運臂、和將取放室內排氣之排氣裝置、和 B 對取放室內導入氣體的氣體導入裝置；搬運臂以具有自晶 圓放置面突出的針、於晶圓W極晶圓放置面之間產生靜 電場的電極、及向著背面噴出氣體的氣體噴射裝置爲佳。 此取放室內，當以針將晶圓W自放置面抬起，而產生空 間S時，> 是對電極施加高電壓，向著晶圓〜背面噴射氣 體，而取放室內以排氣裝置被排氣。更且，取放室內以排 氣裝置減壓的期間，會自氣體導入裝置將氣體入至取放室 內。 [實施例] 其次，具體說明本發明之實施例。 以下之實施例，是被執行在上述之電漿處理裝置1 中〇 首先，準備背面附著了大量微粒之晶圓W，將該晶圓 w放置於室10內中，自感受器11突出的推進針上。 然後，以本排氣線路將是 10內減壓後，關閉 APC14，同時打開排氣管17之閥V2及導熱氣體供給管 -29- (27) (27)200535985 29之閥V3，穩定的將室10內持續排氣，而自導熱氣體 供給孔2 7向著晶圓W背面噴出N2氣體。依此，室1 0內 維持在 6.65xl〇3Pa(50 toi*〇以上，而於空間 S產生阻 力流。 接著，打開閥VI，以流量7.0 X 1 04SC CM對室10內 導入N2氣體。閥V 1打開的期間，對電極板20交互施加 + 2kV和- 2kV的電壓，重複6次；之後，關閉閥VI。更 且，再次打開閥VI，以流量7.0 X 1 04SC CM對室10內導 入N2氣體，在閥VI打開的期間，對電極板20交互施加 + 2kV和-2kV的電壓，重複5次，之後再關閉閥VI。此 時，對空間S照射雷射光，以CCD攝影機來攝像微粒所 造成的散射光線，並觀測之。被攝像之散亂光線的形態， 表示於第6圖。 第6圖（a )，係模式化表示在閥V1打開的期間，對 電極板20反覆交互施加+2kV和-2kV之電壓的情況下， 空間S之形態的圖。在此，藉由以被導入之.N2氣體所產 生的行進衝擊波，和電壓交互施加而產生的靜電性作用 力，微粒係自晶圓W背面大量脫離，而觀測到脫離後之 微粒形成一群L的形態。 第6圖（b )，係模式化表示自第6圖（a )經過數秒 之後，空間S之形態的圖。在此，觀測到於空間S中，藉 由自晶圓W背面向感受器1 1外周部流動的阻力流，使微 粒之一群L自空間S被持續排除的形態。 第6圖（c )，係模式化表不自第6圖（b )經過數秒 -30- 200535985 (28) 之後，空間S之形態的圖。在此，觀測到微粒之一群L自 空間S被完全排除的形態。 彙整此等觀測結果，而表示於第7圖。 第7圖中，橫軸表示時間，縱軸表示微粒個數、電壓 値及壓力値。又，VE表示被施加於電極板20之電壓，Vw 表示Ve使晶圓W感應產生的電壓，p表示室1〇內的壓 力。更且，圖中被標定之各點，係表示各觀測時間中被觀 φ 測到的微粒個數。另外，P値成爲一定的部分，係室1 〇 內之壓力超過可測定範圍的部分。 根據第7圖，得知打開閥V1而大量導入N2氣體至 室1 0之後，立刻藉由所產生之行進衝擊波使大量微粒自 晶圓W背面脫離；更且，藉由對電極板20反覆的交互施 加電壓，使微粒更加脫離。依此，得知藉由大量導入N2 氣體至室1〇內，及上述電壓之反覆交互施加，可充分使 附著於晶圓W背面之微粒脫離。更且，第2次對室1 〇之 φ N2氣體大量導入，及上述電壓之反覆交互施加中，因脫 離之微粒數量減少，故得知進行一次對室1 0之N2氣體大 量導入，及上述電壓之反覆交互施加，可有效的使微粒脫 離。 又，同時以配置於吸引線路之中途，利用了雷射散射 法的微粒監視器，來觀測經由吸引線路而自室1 〇內被排 出的微粒，而得到了與第7圖相同之觀測結果。依此，得 知了阻力流可有效的將脫離後之微粒自室1 0內排出。 -31 - (29) (29)200535985 【圖式簡單說明】 [第1圖]做爲本發明第1實施方式之基板洗淨裝置， 表示電漿處理裝置之槪略構造的圖 [第2圖]第1圖之電漿處理裝置中所執行之基板洗淨 處理的程序圖 [第3圖]做爲本發明第2實施方式之基板洗淨裝置， 表示電漿處理裝置中推進針之槪略構造的圖 [第4圖]表示本發明第3實施方式之基板洗淨裝置之 槪略構造的圖 [第5圖]表示配置有第4圖之基板處理裝置之基板處 理系統之槪略構造的圖 [第6圖]模式化表示本發明之實施例中去除晶圓背面 之微粒之形態的圖；第6圖（a )，係模式化表示在閥V1 打開的期間，對電極板20反覆交互施加+2kV和-2k V之 電壓的情況下，空間S之形態的圖；第6圖（b )，係模 式化表示自第6圖（a )經過數秒之後，空間S之形態的 圖；第6圖（c )，係模式化表示自第6圖（b )經過數秒 之後，空間S之形態的圖 [第7圖]針對本發明之實施例，表示微粒之去除之觀 測結果的圖表 [第8圖]表示用以對先前之晶圓W施加蝕刻處理之電 漿處理裝置之槪略構造的圖 【主要元件符號說明】 -32- (30) 200535985200535985 After a certain number of high voltages with different polarities are applied, the valve V4 of the gas meter 54, the valve V5 of the exhaust pipe 45, and the gas supply pipe V6 are closed, and the process ends. The substrate cleaning process W described above will be carried out from the chamber 43 through the carry-in / out port 52, and will be removed by the module 63 or the loader 60; however, the module 63 is carried because the tree attached to the back of the wafer W is removed. Or particles will not be loaded in the loading port 60. If the platform 44 pole wafer forms a space S according to the above-mentioned substrate cleaning method, an electrostatic field will be generated in the space S because a different polarity pressure is applied to the wafer W alternately. However, an electrostatic force is applied to the wafer W; moreover, when the space S is generated and the inside of the chamber 43 is decompressed with I®, the N2 gas is introduced into the chamber 43, so that a traveling shock wave will be generated, The generated traveling shock wave exerts an impact force on the crystal B. According to this, the particles adhering to the back surface of the wafer W are separated from each other S. Therefore, plasma is not required for particle separation, and W0 is not damaged. When the space S is generated, N2 gas is ejected from the gas supply hole 49 S, and the suction line is ejected to the space S and discharged to the outside of the chamber 43. Therefore, particles in the space S where the N2 gas resistance is separated will be drawn into the above-mentioned resistance flow, and will be excluded from the space S by 43. As a result, the wafer W is not damaged, and particles attached to the back surface can be sufficiently removed. In the above-mentioned substrate cleaning device 42, the substrate cleaning device 4 2 is provided with DP 46, but the wafer cleaning device 4 2 and the valve 丨 of the plasma introduction pipe 64 can be carried into the wafer! (The particles are contaminated. The backside of the high current between j and W is made as follows: 0 W within the lead wire 43 is released to the air wound wafer to the space n2 gas flow. The wafer w is released to the chamber. (26) 200535985 5 6 Common DP; Accordingly, the structure of the substrate processing system 5 5 can be simplified. In the above-mentioned embodiment, although the case where the plasma processing apparatus works as a substrate cleaning apparatus has been described, or it is provided In the case of a dedicated substrate cleaning device, other devices constituting the substrate processing system can also work as the substrate cleaning device of the present invention. For example, when the pick-and-place room is used as the substrate processing device of the present invention, the The pick-and-place chamber includes a transfer arm, an exhaust device for exhausting the pick-and-place chamber, and a gas introduction device for introducing gas into the pick-and-place chamber. The transfer arm has a pin protruding from the wafer placement surface, and a wafer W pole. Electrodes that generate an electrostatic field between the wafer placement surfaces, and A gas ejection device that ejects gas from the surface is preferred. When the wafer W is lifted from the placement surface with a needle to create a space S, the high voltage is applied to the electrodes and the gas is ejected toward the wafer to the rear surface. In the pick-and-place chamber, the exhaust is exhausted. Moreover, during the decompression of the exhaust device in the pick-and-place chamber, gas is introduced into the pick-and-place chamber from the gas introduction device. Embodiments of the invention The following embodiments are implemented in the plasma processing apparatus 1 described above. First, a wafer W with a large number of particles adhered to the back is prepared, and the wafer w is placed in the chamber 10 to self-receptor. 11 protrude on the push pin. Then, after depressurizing the inside of the exhaust line by 10, close the APC14 and open the valve V2 of the exhaust pipe 17 and the heat-conducting gas supply pipe -29- (27) (27) 200535985 29 The valve V3 steadily exhausts the inside of the chamber 10, and the N2 gas is ejected from the heat-conducting gas supply hole 27 toward the back of the wafer W. Accordingly, the inside of the chamber 10 is maintained at 6.65 × 103 Pa (50 toi * 〇 or more). And a resistance flow is generated in the space S. Next, the valve VI is opened to flow An amount of 7.0 X 1 04SC CM is used to introduce N2 gas into the chamber 10. During the opening of the valve V1, a voltage of + 2kV and -2kV is applied to the electrode plate 20 alternately and repeated 6 times; after that, the valve VI is closed. Furthermore, the valve is opened again Valve VI introduces N2 gas into the chamber 10 with a flow of 7.0 X 1 04SC CM. During the opening of the valve VI, + 2kV and -2kV voltages are applied to the electrode plate 20 alternately, repeated 5 times, and then the valve VI is closed. At this time, the space S is irradiated with laser light, and a CCD camera is used to record scattered light caused by particles and observe it. The form of the scattered light that was photographed is shown in Figure 6. Fig. 6 (a) is a diagram schematically showing the shape of the space S when the voltage of + 2kV and -2kV is repeatedly applied to the electrode plate 20 alternately while the valve V1 is open. Here, the particles are detached from the back surface of the wafer W in large quantities by the electrostatic force generated by the application of the traveling shock wave generated by the .N2 gas and the voltage, and it is observed that the detached particles form a group of L Shape. Fig. 6 (b) is a diagram schematically showing the shape of the space S after several seconds have elapsed from Fig. 6 (a). Here, in the space S, a form in which a group of fine particles L is continuously excluded from the space S by a resistance flow flowing from the back surface of the wafer W to the outer periphery of the susceptor 11 is observed. Fig. 6 (c) is a diagram schematically showing the shape of space S after a few seconds -30- 200535985 (28) from Fig. 6 (b). Here, a form in which a group L of particles is completely excluded from the space S is observed. These observations are aggregated and shown in Figure 7. In Fig. 7, the horizontal axis represents time, and the vertical axis represents the number of particles, voltage 値, and pressure 値. In addition, VE indicates a voltage applied to the electrode plate 20, Vw indicates a voltage induced by Ve to the wafer W, and p indicates a pressure in the chamber 10. In addition, the points marked in the figure represent the number of particles measured by observation φ at each observation time. In addition, P 値 becomes a constant part, and the pressure in the system chamber 10 exceeds a measurable range. According to FIG. 7, it is learned that immediately after opening the valve V1 and introducing a large amount of N2 gas into the chamber 10, a large number of particles are detached from the back surface of the wafer W by the traveling shock wave generated; moreover, the electrode plate 20 is repeatedly applied. Applying voltage alternately makes the particles more detached. Based on this, it was learned that by introducing a large amount of N2 gas into the chamber 10 and repeatedly applying the above-mentioned voltage, the particles attached to the back surface of the wafer W can be sufficiently detached. In addition, the second introduction of φ N2 gas to the chamber 10 and the repeated application of the above-mentioned voltage, because the number of detached particles is reduced, it is known that a large amount of N2 gas introduction to the chamber 10 is performed once, and the above The repeated application of voltage can effectively separate particles. At the same time, a particle monitor placed in the middle of the attraction line using a laser scattering method was used to observe the particles discharged from the chamber 10 through the attraction line, and the same observation results as in FIG. 7 were obtained. According to this, it was learned that the resistance flow can effectively discharge the detached particles from the chamber 10. -31-(29) (29) 200535985 [Brief description of the drawings] [Fig. 1] As a substrate cleaning device according to the first embodiment of the present invention, a diagram showing a schematic structure of a plasma processing device [Fig. 2] ] The process chart of the substrate cleaning process performed in the plasma processing apparatus of FIG. 1 [FIG. 3] This is the substrate cleaning apparatus of the second embodiment of the present invention, and shows the outline of the advancement pins in the plasma processing apparatus. Structure diagram [FIG. 4] A diagram showing a schematic structure of a substrate cleaning apparatus according to a third embodiment of the present invention [FIG. 5] A diagram showing a schematic structure of a substrate processing system equipped with the substrate processing apparatus of FIG. 4 FIG. 6 is a diagram schematically showing a form of removing particles on the back of a wafer in an embodiment of the present invention; FIG. 6 (a) is a diagram schematically showing that the electrode plate 20 is repeatedly interacted with while the valve V1 is open. When voltages of + 2kV and -2kV are applied, a diagram of the shape of space S; FIG. 6 (b) is a diagram schematically showing the shape of space S after a few seconds from FIG. 6 (a); Figure 6 (c) is a diagram schematically showing the shape of space S after a few seconds have passed from Figure 6 (b) [Figure 7] For the embodiment of the present invention, a graph showing the observation results of particle removal [FIG. 8] A diagram showing a schematic structure of a plasma processing apparatus for applying an etching process to a previous wafer W [Description of main component symbols]- 32- (30) 200535985
卜 56 電 漿 處 理 裝 置 10 、43 室 11 感 受 器 12 、6 5 排 氣 通 路 13 緩 衝 板 14 APC 15 TMP 16 、46 DP 17 、45 排 氣 管 18 局 頻 電 源 19 整 合 器 20 、35 、 47 電 極 板 22 、41 、 48 直 流 電 源 24 聚 焦 % 25 冷 媒 室 26 配 管 2 7 導 熱 氣 體 供 給 孔 28 導 熱 氣 體 供 給 線路 29 導 熱 氣 體 供 給 管 30 、40 推 進 針 3 1 、5 2 搬 入 搬 出 □ 32 ^ 5 3 閘 閥 Ο 一） 蓮 蓬 頭 34 氣 體 通 氣 孔 -33- (31) 200535985Bu 56 Plasma treatment device 10, 43 Room 11 Receptor 12, 6 5 Exhaust passage 13 Baffle plate 14 APC 15 TMP 16, 46 DP 17, 45 Exhaust pipe 18 Local frequency power supply 19 Integrator 20, 35, 47 electrode plate 22, 41, 48 DC power source 24 Focus% 25 Refrigerant chamber 26 Piping 2 7 Heat-conducting gas supply hole 28 Heat-conducting gas supply line 29 Heat-conducting gas supply tube 30, 40 Push pin 3 1, 5 2 Move in and move out □ 32 ^ 5 3 Gate valve 〇 A) Shower head 34 Gas vent -33- (31) 200535985
36 電 極 支 撐 體 3 7 緩 衝 室 3 8 處 理 氣 體 導 入管 39 磁 鐵 4 2 基 板 洗 淨 裝 置 44 平 台 49 氣 體 供 給 孔 50 氣 體 供 給 線 路 5 1 針 54 氣 體 導 入 管 55 基 板 處 理 系 統 57、62 搬, 運 臂 5 8 取 放 室 59 處 理 艇 60 裝 載 埠 61 對 準 器 6 3 載 運 模 組 64 氣 體 供 給 管 -34 -36 Electrode support 3 7 Buffer chamber 3 8 Process gas introduction tube 39 Magnet 4 2 Substrate cleaning device 44 Platform 49 Gas supply hole 50 Gas supply line 5 1 pin 54 Gas introduction tube 55 Substrate processing system 57, 62 Move, arm 5 8 Pick and place room 59 Processing boat 60 Loading port 61 Aligner 6 3 Carrying module 64 Gas supply pipe -34-