TW200530415A - Vacuum evaporation plating machine - Google Patents
Vacuum evaporation plating machine Download PDFInfo
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- TW200530415A TW200530415A TW094102722A TW94102722A TW200530415A TW 200530415 A TW200530415 A TW 200530415A TW 094102722 A TW094102722 A TW 094102722A TW 94102722 A TW94102722 A TW 94102722A TW 200530415 A TW200530415 A TW 200530415A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
200530415 九、發明說明： 【發明所屬之技術領域】 .、本發明係’關於對基板等之被蒸鍍體蒸鍍蒸鍍㈣ - 成薄膜之真空蒸鍍機。 【先前技術】 真空蒸鍍機係，於真空容器内配置蒸艘材料與被蒸錢 體’在於將真空容器内減壓之狀態下，藉由加熱蒸鍍材料， :吏之熔融蒸發或昇華而汽化，使汽化之蒸鍍材料沈積於被 * &鍛體表面形成薄膜者。於上述真空蒸鍍機，作為蒸鍍材 料之加熱方法，使用將放入蒸鐘材料之掛瑪藉由外部力:敎 器加熱之外熱㈣法等。近年，藉由使用真空蒸鍵機，不 限於藉由真鐘金屬之金屬薄膜形成，亦進行藉由蒸錢有機 物之有機薄膜或藉由使用複數有機物共蒸鍍之高分子薄膜 之形成，使用於例如，平面顯示器（以下，簡稱為fpd。） 之有機電致發光元件（以下，簡稱為有機EL元件。）之形成 鲁[專利文獻1]特開平HM52777號公報 【發明内容】 近年，隨著FPD之普及，進rFPD基板之大型化。隨著FpD 基板之大型化，難以形成汽化之蒸鍍材料之均勻的濃度分 佈，流動，發生難以在FPD基板上均勻地蒸鍍，容易出現 不均之問題。例如，對於有機系之蒸著材料，由於控制容 易，使用上述外熱坩堝法者為多，藉由蒸渡材料之溫度控 制或控制設置於蒸鍍材料與基板之間之開閉器之開閉量， 99194.doc 200530415 控制由蒸鍍材料之蒸氣量。但是，於上述方法，即使可以 控制全體之蒸氣量，卻難以控制對大型FPD基板之寬方向 之蒸氣量，難以以蒸鍍得到均勻的薄膜。 本發明係有鑒於上述課題進行者，提供一種真空蒸鍍 機，其係即使對大型基板，仍可形成蒸鍍材料蒸氣之均勻 流動，控制蒸氣分佈，可將蒸鍍均勻化為目的。 解決上述課題之關於本發明之真空蒸艘機，其特徵在於 包含： 搬送手段，其係設置於真空容器内，搬送基板者； 蒸鍍室’其係設於前述基板之下面側，至少，具有於垂 直於前述基板之搬送方向之板寬方向之被蒸鍍區域之長 度； 蒸發室，其係設於前述真空容器之下方側，使蒸鍍材料 汽化或昇華，產生前述蒸鍍材料之蒸氣； 蒸氣量控制手段，其係，至少具有與前述基板之前述板 寬方向之被蒸鍍區域之長度的同時，控制在於前述基板之 前述板寬方向由前述蒸發室之前述蒸鍍材料之蒸氣量；及 加熱手段，其係加熱由前述蒸發室到前述蒸鍍室之真空 容器之壁面； 前述蒸氣量控制手段，具有： 塊體’其係於前述基板之前述板寬方向，具備複數入口 孔及對應其之複數出口孔； 開閉器轴’其係可旋轉地嵌合於前述塊體内，於前述基 板之前述板寬方向複數配設之圓柱狀；及 99194.doc 200530415 連通孔，其係設於各個前述開閉器軸，連通前述一個入 口孔及對應其之前述一個出口孔。 . 即’前述蒸氣量控制手段係，使由蒸發室侧流人之蒸錄 -材料之蒸氣量，於基板之板寬方向成均句的以，獨立地 旋轉各開閉器轴，獨立地調整於板寬方向之蒸氣量。 解決上述課題之關於本發明之真空蒸鍍機，其特徵在於 包含： 搬送手段，其係設置於真空容器内，搬送基板者，· _ 蒸鍍室，其係設於前述基板之下面側，至少，具有於垂 直於前述基板之搬送方向之板寬方向之被蒸鍍區域之長 度； 蒸發室，纟係設於前述真空容器之下方側，使蒸鑛材料 /Ια化或昇華，產生前述蒸鍍材料之蒸氣； 蒸氣整流手段，其係，至少具有與前述基板之前述板寬 方向之被蒸鍍區域之長度的同時，於前述基板之下面側， φ 與前述基板之被蒸鍍面平行地配置，使在於前述蒸鍍室内 之别述蒸鍵材料之蒸氣分佈及流動平整；及 加熱手段，其係加熱由前述蒸發室到前述蒸鍍室之真空 容器之壁面； 前述蒸氣整流手段，具有： 固定板，其具備複數第1貫通孔；及 複數可動板，其係在於前述固定板之平面上，於前述基 板之則述板寬方向可動配置的同時，具備控制前述複數之 第1貫通孔之開口面積之開口面積控制手段。 99194.doc 200530415 即，前述蒸氣整流手段係，於呈基板之下面侧之蒸鍍室， 使蒸渡室内之蒸鍍材料之蒸氣之面内分佈及面内之流動成 均勻的方式，獨立移動各可動板，獨立控制蒸鍍材料之蒸 氣之分佈及流動。 解決上述課題之關於本發明之真空蒸鍍機，其特徵在於 包含： 搬送手段，其係設置於真空容器内，搬送基板者； 蒸鍍室，其係設於前述基板之下面側，至少，具有於垂 直於前述基板之搬送方向之板寬方向之被蒸鍍區域之長 度； 蒸發室，其係設於前述真空容器之下方側，使蒸鍍材料 汽化或昇華，產生前述蒸鍍材料之蒸氣； 蒸氣量控制手段，其係，至少具有與前述基板之前述板 寬方向之被蒸鍍區域之長度的同時，控制在於前述基板之 前述板寬方向由前述蒸發室之前述蒸鍍材料之蒸氣量； 蒸氣整流手段，其係，至少具有與前述基板之前述板寬 方向之被蒸鍍區域之長度的同時，於前述基板之下面侧， 與則述基板之被蒸鍍面平行地配置，使在於前述蒸艘室内 之前述蒸鍍材料之蒸氣分佈及流動平整；及 加熱手段，其係加熱由前述蒸發室到前述蒸鑛室之真空 容器之壁面； 前述蒸氣量控制手段，具有： 塊體，其係於前述基板之前述板寬方向，具備複數入口 孔及對應其之複數出口孔； 99194.doc 200530415 開閉器軸’其係可旋轉地欲合於前述塊體内，於前述基 板之前述板寬方向複數配設之圓柱狀；及 連通孔’其係設於各個前述開閉器軸，連通前述一個入 口孔及對應其之前述一個出口孔， 前述蒸氣整流手段，具有： 固定板，其具備複數第1貫通孔；及 複數可動板，其係在於前述固定板之平面上，於前述基 板之前述板寬方向可動配置的同時，具備控制前述複數之 第1貫通孔之開口面積之開口面積控制手段。 解決上述課題之關於本發明之真空蒸鍍機，其特徵在於·· 於上述真空蒸鍍機， 前述蒸氣量控制手段， 於刚述開閉器軸之内部或外部，具有旋轉前述開閉器轴 之旋轉手段。 作為上述旋轉手段，例如，於前述開閉器軸之内部或外200530415 IX. Description of the invention: [Technical field to which the invention belongs]. The present invention is' a vacuum deposition machine for depositing substrates and other substrates, such as a thin film, into a thin film. [Previous technology] A vacuum evaporation machine system, which arranges the material of the steamer and the object to be steamed in the vacuum container, is in a state of depressurizing the vacuum container, and heats the vapor deposition material by melting and evaporation or sublimation. Vaporization, so that the vaporized vapor deposition material is deposited on the surface of the forged body to form a thin film. In the above-mentioned vacuum vapor deposition machine, as a method for heating the vapor deposition material, a method of heating the vapor-deposited bell material by an external force such as heating by a vessel is used. In recent years, by using a vacuum evaporation machine, not only the formation of a metal thin film of true clock metal, but also the formation of an organic thin film by vaporizing organic matter or a polymer thin film co-evaporated by using a plurality of organic matter, used in, for example, Formation of organic electroluminescence elements (hereinafter, simply referred to as organic EL elements) of flat panel displays (hereinafter, simply referred to as fpd.) [Patent Document 1] Japanese Patent Application Laid-Open No. HM52777 [Summary of the Invention] In recent years, with the FPD Popularization, the increase in the size of rFPD substrates. As the size of the FpD substrate becomes larger, it becomes difficult to form a uniform concentration distribution and flow of vaporized vapor deposition materials, and it becomes difficult to uniformly vaporize the FPD substrate, and unevenness tends to occur. For example, for organic vapor deposition materials, since the control is easy, there are many who use the above-mentioned external heat crucible method. The temperature of the vapor deposition material controls or controls the amount of opening and closing of the shutter provided between the vapor deposition material and the substrate. 99194.doc 200530415 Controls the amount of vapor from the vapor deposition material. However, in the above method, even if the entire amount of vapor can be controlled, it is difficult to control the amount of vapor in a wide direction to a large FPD substrate, and it is difficult to obtain a uniform thin film by vapor deposition. The present invention has been made in view of the above-mentioned problems, and provides a vacuum evaporation machine capable of forming a uniform flow of vapor of a vapor deposition material even on a large substrate, controlling the vapor distribution, and achieving uniform vaporization. The vacuum steamer according to the present invention that solves the above-mentioned problems is characterized by including: a conveying means which is provided in a vacuum container and conveys a substrate; a vapor deposition chamber which is provided on the lower side of the substrate, at least, having The length of the area to be vapor-deposited in the width direction of the plate perpendicular to the transport direction of the substrate; the evaporation chamber is located below the vacuum container to vaporize or sublimate the vapor-deposited material to generate the vapor of the vapor-deposited material; The vapor amount control means is to control the vapor amount of the evaporation material from the evaporation chamber in the plate width direction of the substrate while having at least the length of the area to be evaporated in the plate width direction of the substrate; And a heating means for heating the wall surface of the vacuum container from the evaporation chamber to the evaporation chamber; the steam amount control means includes: a block body which is connected to the board width direction of the substrate, has a plurality of inlet holes and corresponding The plurality of exit holes thereof; the shutter shaft 'is rotatably fitted in the aforementioned block, and is opened in the width direction of the aforementioned substrate. Cylindrical disposed of; 99194.doc 200530415 and the communication hole, which is provided based on the respective shutter shaft, the communicating hole and an inlet of which corresponds to the one outlet opening. . That is, the aforementioned means for controlling the amount of steam is to make the amount of steam-material vapor flowing from the side of the evaporation chamber equal to the width of the substrate, and independently rotate each shutter shaft and adjust it independently. The amount of steam in the width direction of the board. The vacuum evaporation machine according to the present invention that solves the above-mentioned problems is characterized by including: a conveying means, which is provided in a vacuum container and conveys a substrate, and a vapor deposition chamber, which is provided on the lower side of the substrate, at least , Has the length of the area to be vapor-deposited in the width direction of the board perpendicular to the conveying direction of the substrate; the evaporation chamber is located on the lower side of the vacuum container, so that the vaporized material / Iα is converted or sublimated to produce the aforementioned vapor deposition Vapor of material; steam rectifying means, which is at least as long as the area to be vapor-deposited in the width direction of the substrate, and φ is arranged parallel to the vapor-deposited surface of the substrate on the lower side of the substrate So that the vapor distribution and flow of the other steam-bonding materials in the evaporation chamber are flattened; and the heating means is to heat the wall surface of the vacuum container from the evaporation chamber to the evaporation chamber; the steam rectification means has: fixed A plate having a plurality of first through holes; and a plurality of movable plates which are located on the plane of the fixed plate, and which can be described in the width direction of the substrate. Configure, and includes the opening area control means for controlling the opening area of the plurality of the first through hole. 99194.doc 200530415 That is, the aforementioned steam rectification means is to uniformly distribute the in-plane distribution and in-plane flow of the vapor of the vapor deposition material in the evaporation chamber in the evaporation chamber on the lower side of the substrate, and move each independently. The movable plate independently controls the distribution and flow of the vapor of the evaporation material. The vacuum evaporation machine according to the present invention that solves the above-mentioned problems is characterized by including: a conveying means that is installed in a vacuum container to convey a substrate; a vapor deposition chamber that is provided on the lower side of the substrate, at least, The length of the area to be vapor-deposited in the width direction of the plate perpendicular to the transport direction of the substrate; the evaporation chamber is located below the vacuum container to vaporize or sublimate the vapor-deposited material to generate the vapor of the vapor-deposited material; The vapor amount control means is to control the vapor amount of the evaporation material from the evaporation chamber in the plate width direction of the substrate while having at least the length of the area to be evaporated in the plate width direction of the substrate; The steam rectifying means is at least the same length as the area to be vapor-deposited in the width direction of the substrate, and is arranged on the lower side of the substrate in parallel with the vapor-deposited surface of the substrate, so that Steam distribution and flow leveling of the aforementioned vapor deposition material in the steamer's chamber; and heating means, which heats from the aforementioned evaporation chamber to the aforementioned steaming chamber The wall surface of the vacuum container; the aforementioned means for controlling the amount of steam has: a block body, which is located in the width direction of the aforementioned substrate, has a plurality of inlet holes and a plurality of outlet holes corresponding thereto; 99194.doc 200530415 Cylindrically arranged in a plural number in the aforementioned block body and arranged in the width direction of the aforementioned substrate; and communication holes' which are provided on each of the aforementioned shutter shafts and communicate with the aforementioned one entrance hole and the aforementioned one corresponding thereto The exit hole, the steam rectifying means includes: a fixed plate provided with a plurality of first through holes; and a plurality of movable plates provided on a plane of the fixed plate and arranged in a movable manner in a width direction of the substrate, and provided with: An opening area control means for controlling the opening area of the plurality of first through holes. The vacuum evaporation machine according to the present invention that solves the above-mentioned problems is characterized in that: in the vacuum evaporation machine, the steam amount control means has a rotation of the shutter shaft inside or outside the shutter shaft just described. means. As the rotation means, for example, inside or outside the shutter shaft
部:設置齒輪或突起等突設部分，將該突設部分藉由旋轉 轴等之旋轉運動使之旋轉，使開閉器軸本身旋轉。 解決上述課題之關於本發明直办 Λ <具工4鍍機，其特徵在於·· 於上述真空蒸鍍機， 前述蒸氣整流手段係， 使前述開口面積控制手段為複數第2貫通孔， 將前述第1貫通孔及 時，前述第1貫通孔及 前述可動板之移動方向 别述第2貫通孔以特定 間隔配置之同 則述第2貫通孔之開口寬 為同，0 ’於垂直於 99194.doc 200530415 上述貫通孔之開口寬，作為於垂直於前述可動板之移動 方向為同一者，矩行狀之貫通孔該當。 解決上述課題之關於本發明之真空蒸鍍機，其特徵在於： 於上述真空蒸鍍機， 前述蒸氣整流手段係， 使前述開口面積控制手段為複數第2貫通孔，Portion: A protruding portion such as a gear or a protrusion is provided, and the protruding portion is rotated by a rotating motion such as a rotating shaft to rotate the shutter shaft itself. To solve the above-mentioned problem, the direct-operated Λ < Guo 4 plating machine of the present invention is characterized in that, in the vacuum evaporation machine, the steam rectification means is such that the opening area control means is a plurality of second through holes, and The first through hole is timely, the first through hole and the moving direction of the movable plate are different, the second through hole is arranged at a specific interval, and the opening width of the second through hole is the same, 0 'is perpendicular to 99194. doc 200530415 The opening width of the above-mentioned through hole is the same as the direction perpendicular to the moving direction of the movable plate, and a rectangular through hole should be used. The vacuum evaporation machine according to the present invention that solves the above-mentioned problems is characterized in that: in the vacuum evaporation machine, the steam rectification means is such that the opening area control means is a plurality of second through holes,
將2述第丨貫通孔及前述第2貫通孔以特定間隔配置之同 夺則述第1貝通孔及則述第2貫通孔之開口寬，於垂直於 前述可動板之移動方向為相異。 、 上述貝通孔之開π寬，作為於垂直於前述可動板之移動 方向為相異者’圓形、橢圓形等之貫通孔該當。 解决上述課題之關於本發明 乃 < 具空蒸鍍機，其特徵在於： 於上述真空蒸鍍機， 前述蒸氣整流手段係， 手段為以特定間隔配置之複數窄 使前述開口面積控制 孔0 解決上述課題之關於本發明 ^ , ,, . ^ ^ 之真二蒸鍍機，其特徵在於： 於上述真空蒸鍍機， 前述蒸氣整流手段係， 使前述特定間隔為使前述蒸 氣之分佈呈均勾的間隔。 内之^錢材料之蒸 側（蒸發室側）蒸鍍材料之蒸 句勻則，以均等的間隔配置 ^ 根據该偏移程度，變更 例如，蒸氣整流手段之下方 氣之分佈，於基板之板寬方向 貫通孔即可，分佈有偏之情形 99194.doc 200530415 貫通孔之配置間隔即可。 根據本發明，由於具有於玻璃基板之板寬方向控制蒸鍍 材料之蒸氣量，或將其流動整流之手段，故可控制板寬方 向之蒸鍍分佈，可進行蒸鍍之均勻化。 【實施方式】 本發明係藉由於真空蒸鍍機設置：蒸氣量控制手段（筒管 開閉器），其係於基板之板寬方向均勻地控制由蒸發室側向 基板側流入之蒸鍍材料之蒸氣量；及蒸氣整流手段（多孔板 開閉器），其係於基板之下面侧，與基板之被蒸鍍面平行配 置凋整蒸鍍至内之蒸鍍材料之蒸氣之面内分佈及流動； 控制基板之板寬方向之蒸鍍材料之蒸氣分佈、流動，謀求 蒸鍍之均勻化。 [實施例1] 圖1係使用複數關於本發明之真空蒸鍍機之一列式成膜 裝置之概略平面圖。 以下，作為實施形態之一例，以形成於1?1>1：)之有機EL·元 件為例進仃說明，惟關於本發明之真空蒸鍍機並非限定於 此，亦可進行於其他基板之其他薄膜之形成。又，本發明 係適於大型基板者。 圖1所示之一列式成膜裝置係為以一列形成FPD之有機 EL兀件而構成者，於各處理室設閘門1，以於各個處理室在 相異真空條件下，可執行合於各個目的之製程的方式構成。 具體而言，成為FPD之玻璃基板由圖1中之左側藉由未圖 示之搬送滾輪搬送，通過閘門丨，搬送至遮罩安裝室2。於 99194.doc -12-The opening widths of the second through holes and the second through holes at a specific interval are different, and the opening widths of the first through holes and the second through holes are different from each other in a direction perpendicular to the moving plate. . The opening π width of the above-mentioned through hole should be a through hole such as a circle, an ellipse, etc. which is different from the direction perpendicular to the moving direction of the movable plate. The present invention that solves the above-mentioned problems is a vacuum evaporation machine having the following features: In the vacuum evaporation machine, the steam rectification means is a method in which a plurality of narrowly spaced holes arranged at specific intervals make the opening area control hole 0 The above-mentioned true-two vapor deposition machine of the present invention ^,,,. ^ ^ Is characterized in that: in the vacuum vapor deposition machine, the steam rectifying means is such that the specific interval is such that the distribution of the steam is uniform. Interval. The steaming side of the inner material (evaporation chamber side) of the evaporation material is uniformly arranged at regular intervals. ^ Depending on the degree of shift, for example, the distribution of the gas below the steam rectification means is changed on the plate of the substrate. The wide through-holes may be sufficient, and in the case of uneven distribution, the arrangement interval of the through-holes is sufficient. According to the present invention, since the vapor amount of the vapor deposition material is controlled in the width direction of the glass substrate or the flow is rectified, the vapor deposition distribution in the width direction of the glass can be controlled, and the vapor deposition can be uniformized. [Embodiment] The present invention is provided by a vacuum vapor deposition machine: a vapor amount control means (bobbin shutter), which uniformly controls the evaporation material flowing from the evaporation chamber side to the substrate side in the direction of the width of the substrate. The amount of steam; and steam rectification means (multi-well plate shutter), which is located on the lower side of the substrate and is arranged in parallel with the vapor-deposited surface of the substrate. The vapor distribution and flow of the vapor deposition material in the width direction of the substrate are controlled to achieve uniform vapor deposition. [Embodiment 1] Fig. 1 is a schematic plan view of an in-line film-forming apparatus using a plurality of vacuum evaporation machines according to the present invention. In the following, as an example of the embodiment, the organic EL · element formed in 1? 1: 1) will be described as an example, but the vacuum evaporation machine of the present invention is not limited to this, and can be performed on other substrates. Formation of other films. The present invention is suitable for a large substrate. The in-line film-forming device shown in FIG. 1 is formed by forming organic EL elements of FPD in a row, and a gate 1 is provided in each processing chamber so that each processing chamber can be combined with each other under different vacuum conditions. The way the purpose is structured. Specifically, the glass substrate that becomes the FPD is transferred from the left side in FIG. 1 by a transfer roller (not shown), and is transferred to the mask installation chamber 2 through the gate 丨. At 99194.doc -12-
200530415 遮罩安裝室2,用於形成有機EL元件之圖案之遮罩由遮罩儲 料器2a搬送，安裝於玻璃基板上，同時使用未圖示之真空 幫浦’進行由大氣減壓為真空。 達到特定之真空度之|，安| 了遮罩之玻璃基板依序被 搬运至成膜室3a、3b、3c。於該等成膜室3a、3b、3c，使 用後述之關於本發明之真空蒸鍍機，圖丨之一列式成膜裝置 係為形成有機EL元件之發光層而串聯連接3個成膜室“、 :b、3c之構成。再者，成膜室之數、構成，可因應形成之 薄膜積層數或其目的，適當地組合其順序或數量、成膜之 薄膜本身而構成。 於成膜至3a、3b、3e進行成膜後，玻璃基板搬送至遮罩 拆卸室4。於遮罩拆卸室4,脫離於成膜室外、^所使 用之遮罩，同時將於下_處理室（A1濺鑛室6)使用之新的遮 罩由遮罩儲料器4a搬送而安裝。再者，於遮罩拆卸室4脫離 之遮罩’於遮罩清洗室5使用〇2電漿等清洗，其後搬送至遮 罩儲料器5 a。 女哀了新的遮罩之玻璃基板搬送至A1濺鍍室6，於A〗濺鍍 室6’形成成為往有機肛元件之發光層之配線之金屬薄膜。 其後’搬送至遮罩去除室7,於此脫離遮罩，脫離之遮罩向 遮罩儲料H7a，玻璃基板向封裳室8搬送。於封裝室8，使 =由封裝材供給⑽供給之封裝材，進行藉由成膜形成之 L7C件之封裝。進行封裝之後，玻璃基板由封裝室8 搬送。 圖2係表示於圖}之成膜室“ 、3b、3c之構成之一實施例 99194.doc -13- 200530415 之略圖，各個成膜室3a、3b、3c係由關於本發明之真空蒸 鍍機構成者。再者，成膜室3a、3b、3c係各個使用相異之 一個蒸鍍材料之真空蒸鍍機。又，於圖3圖示成膜室3a之内 部構成。 如圖2所示，搬送機u(搬送手段）係於搬送玻璃基板12之 方向’將驅動滾輪11 a與自由滾輪11 b複數組合構成者，設 於未圖示之上部腔體（真空容器）内。於成膜室3a、3b、3c 進行成膜處理之際，以成膜之薄膜之膜厚沿著玻璃基板12 之搬送方向呈均勻之方式，搬送機11以一定的特定速度使 玻璃基板12移動。再者，驅動滾輪lla、自由滚輪nb係以 不接觸玻璃基板12之成膜部分的方式，配置於玻璃基板12 之兩端之位置，支持玻璃基板12。 玻璃基板12之薄膜之搬送方向之膜厚之厚度及均勻性， 雖藉由調整搬送機丨i之移動速度，可調整為所望條件，惟 隨著玻璃基板12變成大型，垂直於玻璃基板12之搬送方向 之方向（以下，稱為板寬方向L。關於板寬方向L參照圖3。） 之膜厚，即在先前的真空蒸鍍機，板寬方向L之玻璃基板12200530415 Mask installation room 2. The mask used to form the pattern of the organic EL element is transported by the mask stocker 2a and installed on the glass substrate. At the same time, the vacuum pump '(not shown) is used to reduce the pressure from the atmosphere to a vacuum. . The glass substrates that have reached a certain degree of vacuum are transported to the film forming chambers 3a, 3b, and 3c in sequence. In the film forming chambers 3a, 3b, and 3c, a vacuum deposition machine of the present invention described later is used, and a column-type film forming apparatus shown in FIG. 丨 connects three film forming chambers in series to form a light-emitting layer of an organic EL element. ,: B, 3c. In addition, the number and structure of the film forming chambers can be appropriately combined according to the number of thin film layers formed or their purposes, and the order or number of the films, and the film itself to be formed. After film formation in 3a, 3b, and 3e, the glass substrate is transported to the mask removal chamber 4. In the mask removal chamber 4, it is separated from the film formation room and the mask used is placed in the lower _ processing chamber (A1 splash The new mask used in the mine room 6) is transported and installed by the mask stocker 4a. Furthermore, the mask separated from the mask removal chamber 4 'is cleaned in the mask cleaning chamber 5 using 〇2 plasma, etc. Then it is transferred to the mask stocker 5a. The woman with the new mask is transferred to the A1 sputtering chamber 6, and the metal forming the wiring to the light-emitting layer of the organic anal element is formed in the sputtering chamber 6 '. The film is then transported to the mask removal chamber 7, where it is detached from the mask, and the detached mask is transferred to the mask storage material H7a, glass-based The board is transported to the sealing chamber 8. In the sealing chamber 8, the packaging material supplied by the packaging material supply ⑽ is used to package the L7C pieces formed by film formation. After the packaging, the glass substrate is transported from the packaging room 8. Figure 2 is a schematic diagram of an embodiment of the structure of the film forming chamber ", 3b, 3c shown in Fig. 99194.doc -13- 200530415. Each film forming chamber 3a, 3b, 3c is formed by the vacuum evaporation mechanism of the present invention. Successor. The film forming chambers 3a, 3b, and 3c are each a vacuum deposition machine using a different vapor deposition material. The internal structure of the film forming chamber 3a is shown in Fig. 3. As shown in FIG. 2, the conveyer u (conveying means) is a direction in which the glass substrate 12 is conveyed. A driving roller 11 a and a free roller 11 b are combined in a plural number, and are arranged in an upper cavity (vacuum container) (not shown). Inside. When the film forming chambers 3a, 3b, and 3c perform the film forming process, the film thickness of the formed film is uniform along the conveying direction of the glass substrate 12, and the conveyer 11 moves the glass substrate 12 at a certain specific speed. . The driving roller 11a and the free roller nb support the glass substrate 12 at positions on both ends of the glass substrate 12 so as not to contact the film forming portion of the glass substrate 12. The thickness and uniformity of the film thickness of the glass substrate 12 in the conveying direction can be adjusted to the desired conditions by adjusting the moving speed of the conveyor 丨 i, but as the glass substrate 12 becomes large, perpendicular to the glass substrate 12 The film thickness of the direction of the conveying direction (hereinafter referred to as the plate width direction L. Refer to FIG. 3 for the plate width direction L), that is, the glass substrate 12 in the plate width direction L in the previous vacuum evaporation machine.
之蒸鍍薄膜之均勻性成為問題。本發明為改善板寬方向L 之蒸鍍薄膜之均勻性，使用後述之圖4乃至圖8之蒸氣量控 制手段或蒸氣整流手段等，形成圖2、圖3之構成，構成關 於本發明之真空蒸鍍機。 、—成膜室3&，如圖2所示，具有腔體14a(真空容器），其藉由 後數加熱斋13(加熱手段）加熱由蒸發室呢蒸鍍室25&之壁 面月工體14a係，所謂，稱為熱壁腔體者，於汽化之蒸鍛材 99194.doc -14- 200530415 料15到達玻璃基板12之途中之過程，呈不蒸度於壁面之構 成，使用無示於圖之複數溫度感測器，控制為蒸鍍材料i 5 不會蒸鍍之溫度。使用如此之熱壁腔體之情形，可提升蒸 鍍材料之蒸氣利用效率的同時，亦可提升成膜速度。設於 玻璃基板12之下面側之腔體14a之蒸鍍室25a係，於玻璃基 板12之板寬方向L之方向長者，至少，具有玻璃基板12之板 寬方向L之被蒸鍍區域之長度。 又，如圖2、圖3所示，由腔體14a之下方侧，依序向玻璃 基板12側配置：蒸發室丨8(所謂，坩堝部分），其具有蒸鍍材 料15 ’使蒸鍍材料15汽化或昇華，產生蒸鍍材料之蒸氣； 筒管開閉器21(蒸氣量控制手段），其係使由蒸發室18向玻璃 基板12側之蒸鍍材料15之蒸氣量，於玻璃基板12之板寬方 向L ’控制為均勻分佈；多孔板開閉器23(蒸氣整流手段）， 其係由具有複數貫通孔之固定板及可動板所構成，於蒸鍍 室25a内整平蒸鍍材料15之蒸氣之面内分佈及流動，調整為 均勻，及多孔整流板24，其具有複數較上述貫通孔為小之 貝通孔，進一步整平蒸鍍材料丨5之蒸氣之面内分佈及流動。 蒸鍍材料15之蒸氣，經由筒管開閉器21、多孔開閉器23、 然後、多孔整流板24，呈均勻分部之後，於蒸鍍室25a向玻 璃基板12進行蒸鍍。該等構成構件，亦與蒸鍍室25a同樣 地，於玻璃基板12之板寬方向L，至少具有與玻璃基板12 之被蒸鍍區域之板寬方向之長度同等之長度。但是，本發 明之情形，由於後述之筒管開閉器21、多孔板開閉器23具 有控制於板寬方向L之蒸鍍均勻性之功能，蒸鍍室丨8之板寬 99194.doc 200530415 方向L之長度，可不一定為同等長度。 =實腔體⑷、⑽、W為同等之構成，依成膜 使用相異蒸鍍材料15、16、17。該等腔體一、 14c係’各個獨立，藉 猎由無不於圖之真空幫浦，適當地控制 真工度’例如’使用冷;東幫浦等達成高真空度。 [實施例2]The uniformity of the vapor-deposited film becomes a problem. In order to improve the uniformity of the vapor-deposited film in the width direction L of the present invention, the vapor volume control means or vapor rectification means described later in FIG. 4 to FIG. 8 are used to form the structure of FIG. 2 and FIG. Evaporation machine. Film forming chamber 3 &, as shown in Fig. 2, has a cavity 14a (vacuum container), which is heated by the following heating block 13 (heating means) and is heated by the wall surface of the evaporation chamber 25 & The 14a series, the so-called hot wall cavity, has a structure that does not vaporize on the wall during the process of the vaporized forged material 99194.doc -14- 200530415 material 15 reaches the glass substrate 12, and the use is not shown The plurality of temperature sensors in the figure are controlled to a temperature at which the evaporation material i 5 does not vaporize. When such a hot wall cavity is used, the vapor utilization efficiency of the evaporation material can be improved, and the film forming speed can also be increased. The vapor deposition chamber 25a of the cavity 14a provided on the lower surface side of the glass substrate 12 is longer in the direction of the plate width direction L of the glass substrate 12, at least the length of the vapor deposition area having the plate width direction L of the glass substrate 12 . As shown in FIG. 2 and FIG. 3, from the lower side of the cavity 14 a to the glass substrate 12 side, an evaporation chamber 8 (a so-called crucible portion) is sequentially disposed, which has an evaporation material 15 ′ to make the evaporation material 15 vaporization or sublimation, generating vapor of vapor deposition material; bobbin shutter 21 (a method for controlling the amount of vapor), which is the amount of vapor of vapor deposition material 15 from the evaporation chamber 18 to the glass substrate 12 side, The plate width direction L 'is controlled to be uniformly distributed. The perforated plate shutter 23 (steam rectifying means) is composed of a fixed plate and a movable plate having a plurality of through holes, and the evaporation material 15 is leveled in the evaporation chamber 25a. The in-plane distribution and flow of vapor is adjusted to be uniform, and the porous rectifying plate 24 has a plurality of bethle holes which are smaller than the above-mentioned through holes to further smooth the in-plane distribution and flow of vapor in the vapor deposition material. The vapor of the vapor deposition material 15 is uniformly divided through the bobbin shutter 21, the porous shutter 23, and then the porous rectification plate 24, and then is vapor-deposited to the glass substrate 12 in the vapor deposition chamber 25a. These constituent members have at least the same length as the vapor deposition chamber 25a in the plate width direction L of the glass substrate 12 in the plate width direction of the glass substrate 12 in the plate width direction. However, in the case of the present invention, since the bobbin shutter 21 and the perforated plate shutter 23 described later have the function of controlling the vapor deposition uniformity in the plate width direction L, the plate width of the vapor deposition chamber 8 is 99194.doc 200530415 direction L The length may not be the same length. = The solid chambers ⑷, ⑽, and W have the same structure, and different vapor deposition materials 15, 16, and 17 are used depending on the film formation. These chambers 1 and 14c are independent of each other, and the vacuum degree can be controlled by the vacuum pump as shown in the figure to appropriately control the real working degree. [Example 2]
筒管開閉器21係，於玻璃基板12之板寬方向l進行供給均 勾的蒸氣量（濃度分佈）者，只要能得到同等的功能，蒸氣所 通過之流路5配置’方向並無特別限定。筒管開閉器。，具 體地係，為將蒸鍍材料之蒸氣量，於玻璃基板之板寬方向l 均勻地供給，對在於板寬方向L之方向長的蒸錄室，於板寬 方向L之方向設複數流路，將通過該等流路之蒸氣量，可各 個獨立地控制之構成。使用圖4說明如此構成之筒管開閉器 21之構造及動作。又，圖5係表示筒管開閉器21之其他實施 例者。 圖4U)係，構成關於本發明之真空蒸鍍機之筒管開閉器之 立體圖’圖4(b)、（c)係，圖4(a)之A-A線箭頭所示剖面圖， 表示筒管開閉器之動作狀況者。 如圖4所示，筒管開閉器21A，至少，具有：直方體之開 閉器塊體31，其具有玻璃基板12之板寬方向L之被蒸鍍區域 之長度；圓柱狀之空間部分，其係設於開閉器塊體3丨之内 部之長邊方向；及圓柱狀之複數開閉器軸32，其係於該圓 柱狀空間部分可旋轉地嵌合。即，換言之，將分割之複數 圓柱（開閉器軸32)，於塊體31之内部之圓筒狀之空間部分於 99194.doc -16- 200530415 板寬方向L之方向縱列組合者。於開閉器塊體3丨，於對向位 置形成有入口孔33與出口孔34，該等複數入口孔33、出口 孔34係开^成於板寬方向L之方向。又，筒管開閉器内部， 連通對應位置之入口孔33、出口孔34的方式，形成有連通 孔35配置於特疋位置之情形，如圖4(b)所示，對應位置之 入口孔33、出口孔34與連通孔35連通，可流放最大的蒸氣 量 °The bobbin shutter 21 is used to supply a uniform amount of vapor (concentration distribution) in the plate width direction l of the glass substrate 12, as long as the equivalent function can be obtained, the direction of the flow path 5 through which the vapor passes is not particularly limited. . Bobbin shutter. Specifically, in order to uniformly supply the vapor amount of the vapor deposition material in the plate width direction l of the glass substrate, a plurality of streams are set in the direction of the plate width direction L for the steaming chamber that is long in the direction of the plate width direction L. The amount of steam that will pass through these flow paths can be controlled independently. The structure and operation of the bobbin shutter 21 thus constructed will be described with reference to Fig. 4. FIG. 5 shows another embodiment of the bobbin shutter 21. Fig. 4U) is a perspective view of a bobbin opening / closing device constituting the vacuum evaporation machine of the present invention. Figs. 4 (b) and (c) are cross-sectional views taken along the line AA of Fig. 4 (a). Those who operate the shutter. As shown in FIG. 4, the bobbin shutter 21A includes, at least, a cuboid shutter block 31 having the length of a vapor-deposited area of the glass substrate 12 in the plate width direction L; a cylindrical space portion, which It is provided in the longitudinal direction of the inside of the shutter block 3 丨; and a plurality of cylindrical shutter shafts 32 are rotatably fitted in the cylindrical space portion. That is, in other words, the divided plural cylinders (the shutter shaft 32) and the cylindrical space portion inside the block 31 are arranged in a row in the direction of the plate width direction L in 99194.doc -16-200530415. In the shutter block 3, an entrance hole 33 and an exit hole 34 are formed at opposite positions, and the plurality of entrance holes 33 and exit holes 34 are opened in the direction of the plate width direction L. In the bobbin shutter, the inlet hole 33 and the outlet hole 34 of the corresponding position are communicated with each other. As shown in FIG. 4 (b), the inlet hole 33 of the corresponding position is formed as a communication hole 35. The outlet hole 34 communicates with the communication hole 35, which can discharge the maximum amount of steam. °
欲調整蒸氣量之情形，如圖4(c)所示，藉由旋轉開閉器軸 32本身，調整連通孔35入口孔33、出口孔34之相對位置， 減少連通孔35之開π面積，調整蒸氣量。此時，開閉器轴 之凝轉係，於開閉器軸3 2之内部形成之空間部3 6之突設 部37，嵌合貫通於驅動軸％之圓盤狀之鑰39之切欠部⑽嵌 口 乂進行（旋轉手段）。藉由使用此，藉由於空間部％之鑰Μ 之***深度位置，可將愈變更旋轉位置之開閉器軸％，各 個獨立地調整，藉由將各個開閉器軸調整為適當的旋轉位 置可對板寬方向L供給均勻的蒸氣量。再者，開閉器轴32 之連通孔35，由於在開閉器軸32内部具有圓柱狀之空間部 36，故迂迴該空間部36的方式，形成流路。又，開閉器塊 體&之4整’可使用上述鑰39手動，亦可藉由馬達等驅動 手段進仃驅動軸38之旋轉控制及插人位置控制，進行自動 控制亦可。 、者以筒&開閉器2 1A之蒸氣量之控制，主要以變化連 通孔35之開口面積進行，惟實際通過筒管開閉器21A之蒸氣 罝，亦會受到其他物理因素，例如，蒸發㈣之壓力與中 99194.doc 200530415 間室26之壓力之差壓之影響。但是，於關於本發明之真空 蒸鍍機，設有無示於圖之真空計於各室（蒸發室、中間室: 蒸鍍室等），考慮蒸發室15與中間室26之差壓，決定連通孔 35之開口面積。此於後述之筒管開閉器2ib亦同樣。再者， 後述之多孔板關H23之情形，亦考慮中間室邮蒸鍵室 2 5 a之差壓，決定貫通孔之開口面積。 [實施例3] 圖5⑷係表示構成關於本發明之真空蒸鍍機之筒管開閉 2之其他實施例之立體圖，圖5^)、（(〇係，圖5(一之線 箭頭所示剖面圖，表示筒管開閉器之動作狀況者。 如圖5所示，筒管開閉器21B，至少，具有：直方體之開 閉器塊體41，其具有玻璃基板12之板寬方向L之被蒸錢區域 之長度；圓柱狀之以 1部分，其係設於開閉器塊體41之内 部之長邊方向；及圓柱狀之複數開閉器轴42，其係於該圓 柱狀空間部分可旋轉地嵌合。於開閉器塊體41，於對向位 置形成有入口孔43與出口孔44,形成於開閉器塊體41之連 通孔45’配置於特定位置之情形，如圖5(b)所示，入口孔43、 連通孔45與出口孔44完全連通，可流放最大的蒸氣量。欲 調整蒸氣量之情形’如圖5⑷所示’藉由旋轉開閉器軸42, 調整連通孔45對人π孔43與出口孔44之相對位置，減少連 通孔45之開口面積，調整蒸氣量。 广才’器軸42之旋轉係’使用設於開閉器軸42之圓柱面之 突出47進行，於該突出47藉由形成於開閉器塊體〇之孔 成可由外不凋整之構成（旋轉手段）。進行調整其他開閉 99194.doc -18· 200530415 器軸42之旋轉位置之情形，藉由其他開閉器軸42之突出们 進行’可將各個開閉器軸42之旋轉位置，獨立地調整。於 本實施例之情形’由於使用突出47,進行旋轉位置之調整， 故開閉器軸42之連通孔45可以直線流路，可較實施例2之開 閉器轴32之連通孔35，容易地製作。 [實施例4] 多孔板開閉器23係，具有多數更小的連通孔的多孔整流 板24的同時’於玻璃基板12之下面側，對於玻璃基板12之 被蒸鍍面平行配置’與多孔整流板24 —起，於蒸鐘室内， 進一部言及則，於暴露於蒸鍍室内之玻璃基板12之被蒸鍍 區域之全面’整平蒸鑛材料之蒸氣量之面内分佈及面内之 流動’於玻璃基板12上形成均勻的蒸鍍薄膜者。將上述多 孔板開閉器23之構造及動作，使用圖6、圖7說明。又，圖8 係表示多孔板開閉器23之其他實施例者。 如圖6(a)、（b)所示’關於本發明之多孔板開閉器23，至 少，具有：固定多孔板61，其具有玻璃基板丨2之板寬方向l 之被蒸鍍區域之長度；及複數（圖6中為3個）可動多孔板 63a、63b、63c(開口面積控制手段），其係藉由使用柄部62a、 62b、62c，可於固定多孔板61之平面上水平移動。換言之， 可動多孔板63a、63b、63c係，將固定多孔板61上之同一平 面’於互相相異之區域’可於板寬方向L之方向水平移動的 方式配置。 於固定多孔板61，設有圓形狀或橢圓形狀之複數貫通孔 64(第1貫通孔），於對應該等貫通孔64之位置，於可動多孔 99194.doc -19- 200530415 板63a、63b、63c設有，同樣圓形狀或橢圓形狀之複數貫通 孔65 a、65b、65 c(第2貫通孔）。例如貫通孔64與貫通孔65 a、 65b、65c為同一形狀，同一尺寸，同一間隔之情形，於特 定之位置，貫通孔65a、65b、65c不會阻塞貫通孔64，可得 蒸氣所通過之最大開口面積，藉由由該特定位置移動，貫 通孔65a、65b、65c阻塞貫通孔64之一部分，呈調整了開口 面積之狀態（參照圖6(c))。 又，於上述多孔板開閉器23，由於在固定多孔板6 1之平 面上’配置複數可動多孔板63a、63b、63c，故可藉由獨立 移動可動多孔板63a、63b、63c，可將通過可動多孔板63a、 63 b、63 c之貫通孔65 a、65b、65 c之蒸氣量，以各個可動多 孔板63a、63b、63c獨立地控制。於圖6所示多孔板開閉器 23,由於對於玻璃基板12之板寬方向L，具有該當於中央部 位置之可動多孔板63b，與該當於周邊部位置之可動多孔板 63a、63c，故藉由使薄膜之膜厚差特別容易變大之玻璃基 板12之中央部與周邊部之蒸氣量成均等地整流，使薄膜於 板寬方向L之膜厚呈均勻。再者，考慮可動多孔板63a、、 63c之易於支持則，可動多孔板63a、63b、63c配置於固定 多孔板61之上為佳’惟並非限定於此配置。又，貫通孔μ、 65a、65b、65 c之數，大小、配置位置，可依所需蒸氣量決 定。 圖7(a)、（b)係表示可動多孔板63a、63b、63c之貫通孔 65a、65b、65c以等間隔配置之情形，各個可動多孔板63a、 63b、63c之貫通孔65a、65b、65c之位置關係之圖。 99194.doc -20- 200530415 [實施例5] 如圖7(a)所示，貫通孔65a、65b、65c以等間隔^配置之 情形，將可動多孔板63a、63b、63c配置於特定位置時，可 動多孔板63a、63b、63c之相鄰之貫通孔65a、65b、65c之 相互間隔，亦呈相同間隔W〗。然後，如圖7(b)所示，移動 可動多孔板63a、63b、63c之情形，僅可動多孔板63a、63b、 6 3 c之相鄰之貫通孔6 5 a、6 5 b、6 5 c之相互間隔，變化為間 隔W2、W3。此時，因應可動多孔板63 a、63b、63c之位置， 無示於圖之故定多孔板之貫通孔64被阻塞，變化開口面 積，通過之蒸氣量亦會變化。 [實施例6] 圖7(c)、（d)係表示可動多孔板66a、66b、66c之貫通孔 67a、67b、67c以不等間隔配置之情形，各個可動多孔板 66a、66b、66c之貫通孔67a、67b、67c之位置關係之圖。 如圖7(c)所示，貫通孔67a相互以相同間隔w4，貫通孔67b 相互以相同間隔W6、67c相互以相同間隔w8配置之情形， 可動多孔板66a、66b、66c配置於特定位置時，可動多孔板 66a、66b、66c之相鄰貫通孔67a、67b、67c之相互間隔， 具體而言，貫通孔67a與貫通孔67b之間隔為間隔w5，而貫 通孔67b與貫通孔67c之間隔為間隔W7。然後，如圖7(b)所 示’移動可動多孔板66a、66b、66c之情形，僅可動多孔板 66a、66b、66c之相鄰之貫通孔67a、67b、67c相互之間隔 變化為間隔W9、W10。此時，因應可動多孔板66a、66b、66c， 無示於圖之固定多孔板之貫通孔64被阻塞，變化開口面 99194.doc •21 - 200530415 積’變化通過之蒸氣量。有蒸氣量容易供給過剩之部分， 或相反地’蒸氣量容易供給不足之部分之情形，如圖7(〇、 W所示，|貫通孔之密度粗或密，即，亦可藉由使貫通孔 之間隔大或小，可控制蒸氣量之分佈。 [實施例7] 圖6、圖7所示多孔板開閉器23，作為貫通孔之形狀使用 圓形狀或橢圓形狀者，惟可以各式各樣的冠通孔形狀，再 者，亦可使用各式各樣的貫通孔之組合，構成多孔板開閉 器23，只要不脫逸本發明之趣旨，可有任何組合。於圖8 例示幾個進行說明。 圖8(a)係表示多孔板開閉器之其他一例者。固定多孔板61 細語前述者同等者，而具有複數圓形狀貫通孔64。可於固 定多孔板61上移動地配置之可動多孔板71a(開口面積控制 手段）係梳型形狀’具有以特定間隔配置之複數U字型之窄 孔72a ’藉由移動可動多孔板71a，使貫通孔64之開口面積 變化，調整通過之蒸氣量。 又’圖8(b)亦係表示多孔板開閉器之其他一例者，固定 多孔板73及固定多孔板73上可移動地配置之可動多孔板 75a(開口面積控制手段）係，同時具有複數以同一尺寸，同 一矩形形狀之貫通孔74、76a之構成。藉由移動可動多孔板 75a，使貫通孔74之開口面積變化，調整通過之蒸氣量。本 實施例之多孔板開閉器之情形，固定多孔板73、可動多孔 板75a係，同時具有複數以同一尺寸，同一矩形形狀之貫通 孔74、76a之構成，貫通孔之開口寬於與可動多孔板之一動 99194.doc -22- 200530415 方向垂直方向為相同，故移動可動多孔板7 5 a之情形，呈與 其移動量呈線性比例地變化開口面積，因應其變化通過之 蒸氣量亦線性地變化。相反地，使用圖6、圖7所示圓形狀 或橢圓形狀之貫通孔之多孔板開閉器23之情形，由於貫通 孔之開口寬於與可動多孔板之移動方向垂直之方向相異， 故隨著可動多孔板63a等之移動，呈對其移動量非線性地變 化開口面積，因應其變化而通過之蒸氣量亦非線性地變化。 [實施例9]To adjust the amount of steam, as shown in Figure 4 (c), by rotating the shutter shaft 32 itself, adjust the relative position of the inlet hole 33 and the outlet hole 34 of the communication hole 35 to reduce the opening area of the communication hole 35 and adjust The amount of steam. At this time, the condensing system of the shutter shaft is fitted into the cutout portion 37 of the space portion 36 formed inside the shutter shaft 32, and the undercut portion of the disc-shaped key 39 penetrating through the drive shaft% is inserted and fitted. Oral progress (means of rotation). By using this, due to the insertion depth position of the key M of the space portion%, the shutter shaft% which can be changed in rotation position can be adjusted independently, and each shutter shaft can be adjusted to an appropriate rotation position by adjusting The plate width direction L supplies a uniform amount of steam. In addition, the communication hole 35 of the shutter shaft 32 has a cylindrical space portion 36 inside the shutter shaft 32, so that the space portion 36 is bypassed to form a flow path. In addition, the shutter block & No. 4 ' can be manually operated using the key 39 described above, or it can be driven by a driving means such as a motor to control the rotation of the drive shaft 38 and insert position control, and it can also be controlled automatically. The control of the steam volume of the cylinder & shutter 2 1A is mainly performed by changing the opening area of the communication hole 35. However, the actual vapor passing through the tube shutter 21A will also be subject to other physical factors, such as evaporation. The effect of the differential pressure between the pressure of the chamber 26 and the pressure of the chamber 26. However, the vacuum evaporation machine of the present invention is provided with a vacuum gauge (not shown) in each chamber (evaporation chamber, intermediate chamber: evaporation chamber, etc.), and the communication between the evaporation chamber 15 and the intermediate chamber 26 is determined in consideration of the pressure difference. The opening area of the hole 35. The same applies to the bobbin shutter 2ib described later. Moreover, in the case of the perforated plate H23 described later, the differential pressure of the post-steaming key chamber 25 a in the middle chamber is also considered to determine the opening area of the through hole. [Embodiment 3] FIG. 5A is a perspective view showing another embodiment of the bobbin opening and closing 2 of the vacuum evaporation machine according to the present invention, FIG. 5 ^), ((0 series, FIG. 5 (one line arrow section) The figure shows the operation status of the bobbin shutter. As shown in FIG. 5, the bobbin shutter 21B includes, at least, a cuboid shutter block 41 having a glass substrate 12 in a plate width direction L and being steamed. The length of the money area; a cylindrical portion is provided in the direction of the long side inside the shutter block 41; and a cylindrical multiple shutter shaft 42 is rotatably embedded in the cylindrical space portion In the shutter block 41, an entrance hole 43 and an exit hole 44 are formed at opposite positions, and the communication hole 45 'formed in the shutter block 41 is arranged at a specific position, as shown in FIG. 5 (b). The inlet hole 43, the communication hole 45 and the outlet hole 44 are completely connected, and the maximum amount of steam can be discharged. When the steam amount is to be adjusted 'as shown in Fig. 5', the communication hole 45 is adjusted to the person π by rotating the shutter shaft 42 The relative position of the hole 43 and the outlet hole 44 reduces the opening area of the communication hole 45 and adjusts the steam Guangcai's 'rotation system of the device shaft 42' is performed using a protrusion 47 provided on the cylindrical surface of the shutter shaft 42. The protrusion 47 is formed by a hole formed in the shutter block 0 so that it can not be withered outside ( Rotating means). To adjust the rotation position of other opening and closing 99194.doc -18 · 200530415, the rotation position of each shutter shaft 42 can be adjusted independently by the protrusions of other shutter shafts 42. In the case of this embodiment, 'the protrusion 47 is used to adjust the rotation position, so the communication hole 45 of the shutter shaft 42 can have a straight flow path, which is easier than the communication hole 35 of the shutter shaft 32 of Embodiment 2. [Embodiment 4] A perforated plate shutter 23 is a perforated rectifier plate 24 having a plurality of smaller communication holes, and is disposed 'on the lower surface side of the glass substrate 12 in parallel with the vapor-deposited surface of the glass substrate 12' and The porous rectifying plate 24 starts from inside the steaming bell room, and further, the entire surface of the vaporized area of the vapor-deposited material in the vapor-deposited area of the glass substrate 12 exposed in the vapor-depositing room is distributed in-plane and in-plane. Flow Those who form a uniform vapor-deposited film on the glass substrate 12. The structure and operation of the perforated plate shutter 23 will be described with reference to Figs. 6 and 7. Fig. 8 shows another embodiment of the perforated plate shutter 23. 6 (a) and 6 (b), as for the perforated plate shutter 23 of the present invention, at least, it has: a fixed perforated plate 61 having a length of a vapor-deposited area in a plate width direction of a glass substrate 2; And plural (three in FIG. 6) movable perforated plates 63a, 63b, and 63c (opening area control means), which can be moved horizontally on the plane of the fixed perforated plate 61 by using the handle portions 62a, 62b, and 62c. In other words, the movable perforated plates 63a, 63b, and 63c are arranged so that the same plane on the fixed perforated plate 61 is “in a region different from each other” in the direction of the width L of the plate. The fixed perforated plate 61 is provided with a plurality of circular or elliptical through-holes 64 (first through-holes). At positions corresponding to the through-holes 64, the movable perforated 99194.doc -19- 200530415 plates 63a, 63b, 63c is provided with a plurality of through holes 65a, 65b, and 65c (second through holes) having the same circular shape or oval shape. For example, when the through-hole 64 and the through-holes 65 a, 65b, and 65c have the same shape, the same size, and the same interval, at a specific position, the through-holes 65a, 65b, and 65c will not block the through-hole 64, and the steam can pass through it. The maximum opening area is moved by the specific position, and the through holes 65a, 65b, and 65c block a part of the through hole 64, and the opening area is adjusted (see FIG. 6 (c)). In addition, since the plurality of movable perforated plates 63a, 63b, and 63c are disposed on the plane of the fixed perforated plate 61 in the above-mentioned perforated plate shutter 23, the movable perforated plates 63a, 63b, and 63c can be independently moved to pass through. The amount of vapor in the through holes 65a, 65b, and 65c of the movable perforated plates 63a, 63b, and 63c is independently controlled by each of the movable perforated plates 63a, 63b, and 63c. The perforated plate shutter 23 shown in FIG. 6 has a movable perforated plate 63b corresponding to the position of the central portion and movable perforated plates 63a and 63c corresponding to the position of the peripheral portion to the plate width direction L of the glass substrate 12. The amount of vapor in the central portion and the peripheral portion of the glass substrate 12 that makes the difference in film thickness particularly large becomes evenly rectified, so that the film thickness in the film width direction L becomes uniform. Furthermore, considering the easy support of the movable perforated plates 63a, 63c, it is preferable that the movable perforated plates 63a, 63b, 63c are arranged on the fixed perforated plate 61 ', but it is not limited to this configuration. The number, size, and position of the through holes µ, 65a, 65b, and 65c can be determined according to the required amount of steam. 7 (a) and 7 (b) show the case where the through holes 65a, 65b, and 65c of the movable perforated plates 63a, 63b, and 63c are arranged at equal intervals. The through holes 65a, 65b, and 65c position relationship diagram. 99194.doc -20- 200530415 [Example 5] As shown in Fig. 7 (a), when the through holes 65a, 65b, 65c are arranged at equal intervals ^, when the movable perforated plates 63a, 63b, 63c are arranged at specific positions The distance between the adjacent through holes 65a, 65b, 65c of the movable perforated plates 63a, 63b, 63c is also the same interval W. Then, as shown in FIG. 7 (b), when the movable perforated plates 63a, 63b, 63c are moved, only the adjacent through holes 6 5a, 6 5b, 6 5 of the movable perforated plates 63a, 63b, 6 3c are moved. The intervals between c are changed to intervals W2 and W3. At this time, according to the positions of the movable perforated plates 63a, 63b, and 63c, the through-holes 64 of the perforated plate, which are not shown in the figure, are blocked, the opening area is changed, and the amount of vapor passing therethrough also changes. [Embodiment 6] FIGS. 7 (c) and (d) show the case where the through holes 67a, 67b, and 67c of the movable porous plates 66a, 66b, and 66c are arranged at unequal intervals. A diagram showing the positional relationship of the through holes 67a, 67b, and 67c. As shown in FIG. 7 (c), when the through-holes 67a are arranged at the same interval w4 and the through-holes 67b are arranged at the same interval W6 and 67c at the same interval w8, when the movable perforated plates 66a, 66b, and 66c are arranged at specific positions The intervals between adjacent through holes 67a, 67b, and 67c of the movable perforated plates 66a, 66b, and 66c are specific. Specifically, the interval between the through hole 67a and the through hole 67b is the interval w5, and the interval between the through hole 67b and the through hole 67c is For interval W7. Then, as shown in FIG. 7 (b), when the movable perforated plates 66a, 66b, and 66c are moved, only the adjacent through holes 67a, 67b, and 67c of the movable perforated plates 66a, 66b, and 66c are changed to the interval W9. , W10. At this time, according to the movable perforated plates 66a, 66b, and 66c, the through holes 64 of the fixed perforated plate (not shown) are blocked, and the opening surface is changed. There may be cases where the amount of steam is easy to supply excess, or vice versa, as shown in Fig. 7 (0, W, the density of the through-holes is thick or dense, that is, the through-holes can also be made through [Embodiment 7] The perforated plate shutter 23 shown in Figs. 6 and 7 uses a circular shape or an elliptical shape as the shape of the through holes. The shape of the through hole of the crown, and various combinations of through holes can also be used to form the perforated plate shutter 23, as long as it does not escape the interest of the present invention, there can be any combination. Several examples are shown in FIG. 8 Fig. 8 (a) shows another example of the perforated plate shutter. The fixed perforated plate 61 is equivalent to the foregoing, and has a plurality of circular through-holes 64. The fixed perforated plate 61 is movably arranged. The movable perforated plate 71a (an opening area control means) is a comb-like shape having narrow holes 72a having a plurality of U-shapes arranged at specific intervals. By moving the movable perforated plate 71a, the opening area of the through hole 64 is changed and adjusted to pass therethrough. The amount of steam. (b) This is another example of a perforated plate shutter. The fixed perforated plate 73 and the movable perforated plate 75a (opening area control means) that are movably arranged on the fixed perforated plate 73 have a plurality of the same size and the same Rectangular through-holes 74 and 76a. By moving the movable perforated plate 75a, the opening area of the through-hole 74 is changed to adjust the amount of steam passing through. In the case of the perforated plate shutter of this embodiment, the perforated plates 73, The movable perforated plate 75a is composed of a plurality of through holes 74 and 76a of the same size and the same rectangular shape. The opening of the through hole is wider than the vertical direction of one of the movable perforated 99194.doc -22- 200530415. Therefore, when the movable perforated plate 7 5 a is moved, the opening area is changed linearly in proportion to the amount of movement, and the amount of steam passing in response to the change also changes linearly. Conversely, the circular shape or ellipse shown in FIGS. 6 and 7 is used. In the case of the perforated plate shutter 23 with a through hole of a shape, the opening of the through hole is wider than the direction perpendicular to the moving direction of the movable perforated plate. The movable porous plate 63a and the like move, its shape becomes linear movement amount of the opening area, in response to the change amount of vapor through it also changes non-linearly. [Example 9]
又’圖8(c)亦係表示多孔板開閉器之其他一例者。本實施 例之固定多孔板73係，以與實施例8同樣地為具有複數矩形 形狀之貫通孔74之構成，惟可移動地配置於固定多孔板73 上之可動多孔板79a(開口面積控制手段）係，具有複數特殊 的形狀的貫通孔8〇a之構成。該貫通孔8〇a係，大小相異之2 個矩形形狀之貫通孔以梯形形狀之貫通孔一體者，例如， 亦可稱為打毽板形狀。本實施例之多孔板開閉器之情形， 由於固定多孔板73具有矩形狀之貫通孔74,可動多孔板79a 具有打毽板形狀之貫通孔8〇a，故移動可動多孔板之情 形:對於移動方向垂直方向之貫通孔8〇a之大之處，隨著可 夕孔板79a之移動可以大的線性，變化其開口面積，而 對於移動方向垂直方向之貫通孔80之小之處，隨著可動多 孔板，移動可以小的線性，變化其開σ面積。即，對於 旦:里广使變化量大之部分使貫通孔之寬大，與使變化 :變=分使貫通孔之寬小，可使之為具有所望開口面積 、11者’隨著其開π面積之變化，變化通過之蒸氣 99194.doc •23- 200530415 量 如此地’藉由組合貫通孔之形狀，貫通孔之組合等，可 控制所望之變化特性、所望之控制範圍之蒸氣量。【圖式簡單說明】 圖1係使用關於本發明之真空蒸鍍機之線内成媒装置 概略平面圖。 圖2係表示複數配置關於本發 一例之概略圖。 圖3係表示關於本發 之概略圖。 圖4(aHe)係表示構成關於本發明之真空蒸鑛機之筒管 開閉器之一例之圖。 圖5(al·⑷係表示構成關於本發明之真空蒸鑛機之筒管 開閉器之一例之圖。 圖6(aHe)係表*構成關於本發明之真空該機之多孔 板開閉器之一例之圖。 圖7⑷-⑷係說明構成關於本發明之真空蒸鍵機之多孔 板開閉器之調整方法之圖。 圖叫⑷係表示構成關於本發明之真空蒸鐘機之多孔 板開閉器之其他構成例之圖。 【主要元件符號說明】 3a、3b、3c 11 搬送機 明之真空蒸鍍機之構成 之 之 月之真空蒸鍍機之内部構成之一例 真空蒸鍍機 玻璃基板 99194.doc • 24 - 12 200530415Fig. 8 (c) shows another example of the perforated plate shutter. The fixed perforated plate 73 of this embodiment is configured as a plurality of through holes 74 having a rectangular shape in the same manner as in Embodiment 8. However, the movable perforated plate 79a (opening area control means) movably disposed on the fixed perforated plate 73 ) Is a structure having a plurality of through-holes 80a having a special shape. The through-hole 80a is a trapezoid-shaped through-hole formed by integrating two rectangular-shaped through-holes having different sizes. For example, the through-hole 80a is also called a dome plate shape. In the case of the perforated plate shutter of this embodiment, since the fixed perforated plate 73 has a rectangular through-hole 74 and the movable perforated plate 79a has a dome-shaped through-hole 80a, the case of moving the movable perforated plate: For moving In the vertical direction of the through hole 80a, the opening area can be changed linearly with the movement of the opening plate 79a. As for the small size of the through hole 80 in the vertical direction, The movable perforated plate can be moved in a small linear manner, changing its open σ area. That is, for Dan: Li Guang, make the part with a large amount of change make the width of the through-hole large, and make the change: change = make the width of the through-hole small, which can make it have the desired opening area. The change in area, the amount of steam passing through the change is 99194.doc • 23- 200530415. By combining the shape of the through-holes and the combination of the through-holes, the desired change characteristics and the desired amount of steam can be controlled. [Brief Description of the Drawings] FIG. 1 is a schematic plan view of an in-line medium forming device using the vacuum evaporation machine of the present invention. Fig. 2 is a schematic diagram showing an example of the present invention in a plural arrangement. Fig. 3 is a schematic diagram showing the present invention. Fig. 4 (aHe) is a view showing an example of a bobbin opening / closing device constituting the vacuum steamer of the present invention. Fig. 5 (al · ⑷ is a diagram showing an example of a bobbin opening / closing device constituting the vacuum steamer of the present invention. Fig. 6 (aHe) is a table * showing an example of a perforated plate opening / closing apparatus constituting the vacuum machine of the present invention. Fig. 7 (a)-(b) are diagrams illustrating a method for adjusting a perforated plate shutter constituting the vacuum steam keyer of the present invention. The drawing is a diagram showing other constructions of the perforated plate shutter constituting the vacuum steamer of the present invention. A diagram of a structural example. [Description of main component symbols] 3a, 3b, 3c 11 The structure of the vacuum deposition machine of the transporter Mingyue is an example of the internal structure of the vacuum deposition machine of the moon. Vacuum deposition machine glass substrate 99194.doc • 24 -12 200530415
13 加熱器 14a、14b、14c 腔體 15 、 16 、 17 蒸鐘材料 18 ^ 19 、 20 蒸發室 21、21A、21B 筒管開閉器 23 多孔板開閉器 24 多孔整流板 25a、25b、25c 蒸鍍室 26 中間室 31、41 開閉器塊體 32、42 開閉器軸 33、43 入口孑L 34 ^ 44 出口孔 35、45 連通孔 61、73 固定多孔板 63a、63b、63c、71a、 75a ^ 79a 可動多孔板 64、74 貫通孔 65a、65b、65c、76a、80a 貫通孔 72a 窄孔 99194.doc -25-13 Heater 14a, 14b, 14c Cavity 15, 16, 17 Steam bell material 18 ^ 19, 20 Evaporation chamber 21, 21A, 21B Tube shutter 23 Porous plate shutter 24 Porous rectification plate 25a, 25b, 25c Evaporation Chamber 26 Intermediate chamber 31, 41 Switch block 32, 42 Switch shaft 33, 43 Inlet 孑 L 34 ^ 44 Outlet hole 35, 45 Communication hole 61, 73 Fixed perforated plates 63a, 63b, 63c, 71a, 75a ^ 79a Movable perforated plates 64, 74 through holes 65a, 65b, 65c, 76a, 80a through holes 72a narrow holes 99194.doc -25-
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004020949A JP4475967B2 (en) | 2004-01-29 | 2004-01-29 | Vacuum evaporation machine |
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| Publication Number | Publication Date |
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| TW200530415A true TW200530415A (en) | 2005-09-16 |
| TWI281948B TWI281948B (en) | 2007-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW094102722A TWI281948B (en) | 2004-01-29 | 2005-01-28 | Vacuum evaporation plating machine |
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| Country | Link |
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| JP (1) | JP4475967B2 (en) |
| KR (1) | KR100635903B1 (en) |
| CN (1) | CN100363532C (en) |
| TW (1) | TWI281948B (en) |
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-
2005
- 2005-01-28 KR KR1020050007844A patent/KR100635903B1/en active IP Right Grant
- 2005-01-28 CN CNB2005100063980A patent/CN100363532C/en not_active Expired - Fee Related
- 2005-01-28 TW TW094102722A patent/TWI281948B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1648278A (en) | 2005-08-03 |
| JP4475967B2 (en) | 2010-06-09 |
| JP2005213569A (en) | 2005-08-11 |
| KR100635903B1 (en) | 2006-10-18 |
| CN100363532C (en) | 2008-01-23 |
| KR20060042874A (en) | 2006-05-15 |
| TWI281948B (en) | 2007-06-01 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |