TW200508805A - Arc layer for semiconductor device - Google Patents
Arc layer for semiconductor deviceInfo
- Publication number
- TW200508805A TW200508805A TW092135422A TW92135422A TW200508805A TW 200508805 A TW200508805 A TW 200508805A TW 092135422 A TW092135422 A TW 092135422A TW 92135422 A TW92135422 A TW 92135422A TW 200508805 A TW200508805 A TW 200508805A
- Authority
- TW
- Taiwan
- Prior art keywords
- arc layer
- layer
- silicon
- arc
- lower percentage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/353,886 US6908852B2 (en) | 2003-01-29 | 2003-01-29 | Method of forming an arc layer for a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200508805A true TW200508805A (en) | 2005-03-01 |
Family
ID=32736279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092135422A TW200508805A (en) | 2003-01-29 | 2003-12-15 | Arc layer for semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US6908852B2 (zh) |
JP (1) | JP4712686B2 (zh) |
KR (1) | KR101085279B1 (zh) |
CN (1) | CN100481418C (zh) |
TW (1) | TW200508805A (zh) |
WO (1) | WO2004070471A2 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4186725B2 (ja) * | 2003-06-24 | 2008-11-26 | トヨタ自動車株式会社 | 光電変換素子 |
US7271464B2 (en) * | 2004-08-24 | 2007-09-18 | Micron Technology, Inc. | Liner for shallow trench isolation |
US7202164B2 (en) | 2004-11-19 | 2007-04-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming ultra thin silicon oxynitride for gate dielectric applications |
US7629256B2 (en) * | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
US20080299775A1 (en) * | 2007-06-04 | 2008-12-04 | Applied Materials, Inc. | Gapfill extension of hdp-cvd integrated process modulation sio2 process |
US7745350B2 (en) * | 2007-09-07 | 2010-06-29 | Applied Materials, Inc. | Impurity control in HDP-CVD DEP/ETCH/DEP processes |
US7867921B2 (en) * | 2007-09-07 | 2011-01-11 | Applied Materials, Inc. | Reduction of etch-rate drift in HDP processes |
US7972968B2 (en) * | 2008-08-18 | 2011-07-05 | Applied Materials, Inc. | High density plasma gapfill deposition-etch-deposition process etchant |
JP5155070B2 (ja) * | 2008-09-02 | 2013-02-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
US20110151222A1 (en) * | 2009-12-22 | 2011-06-23 | Agc Flat Glass North America, Inc. | Anti-reflective coatings and methods of making the same |
CN102810504A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 厚铝生长工艺方法 |
US8497211B2 (en) | 2011-06-24 | 2013-07-30 | Applied Materials, Inc. | Integrated process modulation for PSG gapfill |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5378659A (en) * | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
JP3326663B2 (ja) * | 1994-04-05 | 2002-09-24 | ソニー株式会社 | 半導体装置の製造方法 |
US5918147A (en) * | 1995-03-29 | 1999-06-29 | Motorola, Inc. | Process for forming a semiconductor device with an antireflective layer |
US6004850A (en) | 1998-02-23 | 1999-12-21 | Motorola Inc. | Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation |
US6100559A (en) * | 1998-08-14 | 2000-08-08 | Advanced Micro Devices, Inc. | Multipurpose graded silicon oxynitride cap layer |
JP4776747B2 (ja) * | 1998-11-12 | 2011-09-21 | 株式会社ハイニックスセミコンダクター | 半導体素子のコンタクト形成方法 |
-
2003
- 2003-01-29 US US10/353,886 patent/US6908852B2/en not_active Expired - Lifetime
- 2003-12-15 TW TW092135422A patent/TW200508805A/zh unknown
-
2004
- 2004-01-23 WO PCT/US2004/001924 patent/WO2004070471A2/en active Application Filing
- 2004-01-23 JP JP2006502973A patent/JP4712686B2/ja not_active Expired - Fee Related
- 2004-01-23 KR KR1020057013929A patent/KR101085279B1/ko not_active IP Right Cessation
- 2004-01-23 CN CNB2004800031339A patent/CN100481418C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101085279B1 (ko) | 2011-11-22 |
JP2006516823A (ja) | 2006-07-06 |
JP4712686B2 (ja) | 2011-06-29 |
CN100481418C (zh) | 2009-04-22 |
US20040145029A1 (en) | 2004-07-29 |
WO2004070471A2 (en) | 2004-08-19 |
KR20050096957A (ko) | 2005-10-06 |
WO2004070471A3 (en) | 2005-11-03 |
US6908852B2 (en) | 2005-06-21 |
CN1765019A (zh) | 2006-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11776807B2 (en) | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films | |
TW200508805A (en) | Arc layer for semiconductor device | |
US8071478B2 (en) | Method of depositing tungsten film with reduced resistivity and improved surface morphology | |
TW202141743A (zh) | 形成及沈積碳氧化矽薄膜的方法 | |
TW200617197A (en) | Deposition of ruthenium and/or ruthenium oxide films | |
US9048294B2 (en) | Methods for depositing manganese and manganese nitrides | |
TW379371B (en) | A manufacturing method of tungsten silicide-polysilicon gate structures | |
TW200509251A (en) | Semiconductor device and method for manufacturing the same | |
TW200612484A (en) | Etch stop structure and method of manufacture, and semiconductor device and method of manufacture | |
CN108573866A (zh) | 氧化膜去除方法和装置以及接触部形成方法和*** | |
TW429660B (en) | Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device | |
TWI268550B (en) | Decreasing metal-silicide oxidation during wafer queue time description | |
TW200620470A (en) | Semiconductor device | |
EP1462540A4 (en) | METHOD FOR FORMING THIN FILM, SUBSTRATE HAVING THIN FILM FORMED THEREBY, AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME | |
ATE511555T1 (de) | Atomlagenabscheidungsverfahren zur bildung von siliciumdioxid enthaltenden schichten | |
US20160181150A1 (en) | Precursors Of Manganese And Manganese-Based Compounds For Copper Diffusion Barrier Layers And Methods Of Use | |
JP2006516823A5 (zh) | ||
KR950015650A (ko) | 반도체 장치 제조방법 | |
ATE543190T1 (de) | Materialabscheidung aus einer verflüssigten gaslösung | |
JP2005303150A5 (zh) | ||
CN101241853B (zh) | 一种可改善多晶硅栅极侧面轮廓的栅极制作方法 | |
TW200608462A (en) | Method for forming tungsten nitride film | |
JPH04294530A (ja) | 半導体装置の製造方法 | |
EP1164630A3 (en) | Graded/stepped silicide process to improve MOS transistor | |
KR100609049B1 (ko) | 반도체 소자의 금속배선 형성방법 |