TW200503249A - Method for code programming mask ROM - Google Patents

Method for code programming mask ROM

Info

Publication number
TW200503249A
TW200503249A TW093119952A TW93119952A TW200503249A TW 200503249 A TW200503249 A TW 200503249A TW 093119952 A TW093119952 A TW 093119952A TW 93119952 A TW93119952 A TW 93119952A TW 200503249 A TW200503249 A TW 200503249A
Authority
TW
Taiwan
Prior art keywords
photoresist layer
coded
transparent holes
mask rom
code
Prior art date
Application number
TW093119952A
Other languages
Chinese (zh)
Other versions
TWI330402B (en
Inventor
Da-Hung Yang
Ching-Yu Jang
wei-min Zhong
zheng-cheng Xue
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/614,698 external-priority patent/US6875659B2/en
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200503249A publication Critical patent/TW200503249A/en
Application granted granted Critical
Publication of TWI330402B publication Critical patent/TWI330402B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

The present invention discloses a method for code programming mask ROM, which includes the following steps: forming a first photoresist layer on the word lines on the substrate buried with bit lines and on the gate oxide layer; next, patterning the first photoresist layer to form the pre-code transparent holes on all memory cells corresponding to the crossed word lines and bit lines; employing ion implantation or plasma to solidify the first photoresist layer; then, forming a second photoresist layer on the first photoresist layer, and patterning the second photoresist layer to form the actual code transparent holes on the memory cells coded with logical value zero; and, conducting the ion implantation for each memory cell to be coded through the pre-coded transparent holes and the actual code transparent holes.
TW093119952A 2003-07-03 2004-07-01 Method for code programming mask ROM TW200503249A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/614,698 US6875659B2 (en) 2002-08-12 2003-07-03 Methods of code programming a mask ROM

Publications (2)

Publication Number Publication Date
TW200503249A true TW200503249A (en) 2005-01-16
TWI330402B TWI330402B (en) 2010-09-11

Family

ID=34794484

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119952A TW200503249A (en) 2003-07-03 2004-07-01 Method for code programming mask ROM

Country Status (2)

Country Link
CN (1) CN100395844C (en)
TW (1) TW200503249A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101980421B (en) * 2010-10-15 2012-12-19 福建一华电机有限公司 Quick damping device for voltage regulator of generating set
CN103779232B (en) * 2014-01-28 2016-08-17 北京京东方光电科技有限公司 A kind of manufacture method of thin film transistor (TFT)
CN105448839B (en) * 2014-08-21 2019-06-04 中芯国际集成电路制造(上海)有限公司 The photolithography method of semiconductor devices, the production method of flush memory device and flush memory device
CN108288581A (en) * 2018-01-26 2018-07-17 德淮半导体有限公司 Semiconductor devices and forming method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022644A (en) * 1998-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Mask containing subresolution line to minimize proximity effect of contact hole
TW508761B (en) * 1999-09-09 2002-11-01 Taiwan Semiconductor Mfg Manufacturing method of self-aligned mask type ROM
JP2001351992A (en) * 2000-06-08 2001-12-21 Nec Corp Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TWI330402B (en) 2010-09-11
CN1619703A (en) 2005-05-25
CN100395844C (en) 2008-06-18

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