TW200426232A - Cu-Ni-Si alloy and production method thereof - Google Patents

Cu-Ni-Si alloy and production method thereof Download PDF

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TW200426232A
TW200426232A TW093109699A TW93109699A TW200426232A TW 200426232 A TW200426232 A TW 200426232A TW 093109699 A TW093109699 A TW 093109699A TW 93109699 A TW93109699 A TW 93109699A TW 200426232 A TW200426232 A TW 200426232A
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conductivity
strength
alloy
concentration
amount
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TWI247816B (en
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Ishikawa Yasusei
Arami Toshihiro
Hatano Takaaki
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Nippon Mining Co
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    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47GHOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/10Pillows
    • A47G9/1009Rigid frame constructions
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47GHOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/10Pillows
    • A47G9/1081Pillows comprising a neck support, e.g. a neck roll
    • A47G9/109Pillows comprising a neck support, e.g. a neck roll adapted to lie on the side and in supine position

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  • General Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
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Abstract

This invention provides a Cu-Ni-Si alloy with high strength and high electrical conductivity for electronic material. The invented Cu-Ni-Si alloy with high strength and high electrical conductivity for electronic material is characterized in comprising 1.0-4.5 mass % of Ni, 0.25-1.5 mass % of Si, and balance of Cu and inevitable impurities and satisfying ([Ni]-4<chi>)<SP>2</SP>([Si]-<chi>)=1/8, in which [Ni] and [Si] are mass concentrations of Ni and Si, respectively, the mass concentration ratio of Ni and Si ([Ni]/[Si]) is 4-6, and <chi> is 0.1-0.45.

Description

200426232 玖、發明說明: 【Is明所屬之技術領域】200426232 发明, Description of invention: [Technical field to which Is 明 belongs]

本發明係、關於在製造強度與導電性佳之電子材 子零件時,所使用之Cu—Ni_Si合金。 【先前技術】 如入入 $饮说哥所使用之 銅5金,被要求需兼具高強度與高導電性。再者,近 導線架、電子機器之各種端子、 ♦中,隨著導線數 “σ、乍間距化之進展’而要求電子零件之高密度構 :性及商可靠性。而在電子零件所使用之材料上,亦曰益 嚴格要求其薄板化、加工性佳、高導電率等特性。^ 用於導線架、電子機器之各種端子、連接器等之材料 ^要具:強度與高導電性,因此以電子機器類與零件之 t里化、南強度、高導電性之觀點來看’取代以往之磷青 鋼、黃銅等為代表之固溶強化型合金,時效硬化型銅合: :使用I正增加中。時效硬化型之鋼合金,藉由將溶體化 處理過之過飽和固溶體進行時效處裡,而使微細粒子均一 析^而提昇了拉伸強度及财力、彈簧臨界值等機械特性, 同%並減少銅中之固溶元素量而提昇導電率。 在時效硬化型銅合金中,Cu-N卜Si合金係同時擁有高 強度與高導電性之代表性銅合金。該銅合金,係、將微細Z Nl Si系金屬間化合物粒子析出而具優異之強度與導電性 …可作為導線架、電子機器之各種端子、連接器等材料而 貫用化。(例如,參照專利文獻j ) 專利文獻1 ··特願2〇〇〇h8319 【發明内容】The present invention relates to a Cu-Ni_Si alloy used in the manufacture of electronic material parts with excellent strength and electrical conductivity. [Previous technology] If the copper 5 gold used in the drink is used, it is required to have both high strength and high conductivity. In addition, various terminals near lead frames and electronic devices require high-density structure and reliability of electronic components as the number of wires "sigma, advancement in spacing", and are used in electronic components. In terms of materials, Yiyi strictly requires its characteristics such as thinning, good processability, high electrical conductivity, etc. ^ Materials for lead frames, various terminals and connectors of electronic equipment, etc. ^ It must have strength and high electrical conductivity, Therefore, from the viewpoints of electronic equipment and parts, such as solidification, high strength, and high conductivity, it replaces the solid solution-strengthened alloys typified by the traditional phosphor blue steel and brass, and age-hardening copper alloys: I is increasing. Aging-hardened steel alloy, by aging the supersaturated solid solution after solution treatment, uniformly analyzes fine particles ^ and improves tensile strength, financial resources, spring critical values, etc. Mechanical properties, the same%, and reduce the amount of solid solution elements in copper to improve electrical conductivity. Among the age-hardening copper alloys, Cu-N and Si alloys are representative copper alloys that have both high strength and high conductivity. The copper Alloy The fine Z Nl Si-based intermetallic compound particles are precipitated to have excellent strength and conductivity ... It can be used as a material for lead frames, various terminals and connectors of electronic devices. (See, for example, Patent Document j) Patent Document 1 ·· Wish 200000h8319 [Summary of the Invention]

Cu-Ni-Si合金藉由折出Ni 強度與導電性。然…般而言 :電率呈相反之關係、’強度強則導電性低;導電性高則強 在CU_Nl_Si合金之情形’若添加之Ni與Si濃度低 元法:級Si系金屬間化合物粒子析出物之固溶 而仵到良好之導電性,然而由於低濃度使析出量 ’:致強度不佳。另一方面’若使其增高濃 出置變多而可得到充分之強度,但無法形…,系金; 間化合物粒子析出物之固溶元素將變多而導致導電性不充 分,並非理想之狀況。 本發明係為解決上述問題而作成者,故以提供兼Μ 強度與高導電性之電子材料用以合金為目的。 為解決上述問題,本發明人等不斷進行Cu_Ni_si合金 之研究’而成功開發了兼具高強度與高導電性之Cu-NilSi 合金。 亦即本發明係: ([Ni] — 4/)2 ([以]1 ) = w (ο一種兼具高強度與高導電性之Cu-Ni—Si合金,其 特徵在於,含有Ni 1(M 5%、與Si ϋ 25]·5%,其餘為 由cu與無法避免之雜質而構成之銅基合金中,在以 [Si]表示Ni與^之質量濃度時,比 為4~6,且式1所定義之%為〇.卜0.45之[Ni]、[Si]。 (式1) 200426232 (2) 如上述(1)記載之Cu、Ni_Si合金,其中含有如 〇· 05〜0· 3〇/〇 (3) 如上述(1)或(2)記載之Cu—Ni_Si合金,盆中含有 擇自 種以上且總量為0.005〜2.0%。 【實施方式】 接著,具體說明在本發明中,銅合金之組成範圍限於 上述範圍之原因。 反1_與Si澧唐 N i與S i,藉由進行時钕# ,田 ^ χτ. M. c. 退仃η文處理,使&amp;與Si形成以細微 著 12二為主之金屬間化合物之析出粒子,使合金之強度顯 『加,另-方面亦提高導電性。惟,若Ni濃度未滿 濃度未滿〇.25%時,㈣ ,之強度。又,若Nl濃度超過4 5%、或以濃度超 匕1.5%時,雖然可得到高強度,鈇 母相中座# #4·技曰 …、而導電丨生變低,再者於 與析出物),導致彎曲加工性、=:糸粒子(結晶物 此,將Nl•… 刻性與鍍敷性變差。因 將N1的;辰度訂為1 〇〜4 w · 。 勹·U 4·5%, Sl的濃度訂為0.25〜1.5% 度比 。若進:11之固洛N1量與固溶Si量減少則導電率增加 固溶Ni量盥固溶ς·… 則精* NhSl析出使 溶…旦仙、.Sl!減少,而提昇導電率。時效後之固 U 4 Si * ’係依照後述之料度積的闕係式1Cu-Ni-Si alloys have the strength and conductivity of Ni by folding it out. However ... Generally speaking: the electrical conductivity has the opposite relationship, 'high strength means low conductivity; high conductivity means strong conductivity in the case of CU_Nl_Si alloy'. If the added Ni and Si concentration are low-level methods: grade Si-based intermetallic compound particles The solid solution of the precipitates leads to good conductivity, but the amount of precipitation due to the low concentration ': results in poor strength. On the other hand, if you increase the concentration, you can get sufficient strength, but you ca n’t shape it ..., gold; solid solution elements of the precipitates of inter-compound particles will increase, resulting in insufficient conductivity, which is not ideal. situation. The present invention was made in order to solve the above-mentioned problems, and the object is to provide an electronic material for alloying with both M strength and high conductivity. In order to solve the above-mentioned problems, the present inventors have continuously conducted research on Cu_Ni_si alloy and have successfully developed a Cu-NilSi alloy having both high strength and high conductivity. That is, the present invention is: ([Ni] — 4 /) 2 ([to] 1) = w (ο a Cu-Ni-Si alloy having both high strength and high conductivity, which is characterized by containing Ni 1 ( M 5%, and Si ϋ 25] · 5%, and the rest are copper-based alloys composed of cu and unavoidable impurities. When [Si] represents the mass concentration of Ni and ^, the ratio is 4 ~ 6, And the% defined by Formula 1 is [Ni], [Si] of 0.45. (Formula 1) 200426232 (2) The Cu and Ni_Si alloys as described in (1) above, which contain, for example, 0.05 to 0 · 3〇 / 〇 (3) The Cu-Ni_Si alloy as described in (1) or (2) above, the pot contains more than one kind and the total amount is 0.005 to 2.0%. [Embodiment] Next, the present invention will be described in detail. In the reason that the composition range of the copper alloy is limited to the above range. Inverse 1_ and Si 澧 Tang Ni and Si, by performing neodymium #, field ^ χτ. M. c. It forms precipitated particles of intermetallic compounds mainly composed of 12 and 2 with Si, which makes the strength of the alloy significantly increase, and also improves the conductivity. However, if the Ni concentration is less than 0.25%,强度, the strength. Also, if the concentration of Nl exceeds 4 5% , Or when the concentration is over 1.5%, although high strength can be obtained, the mother phase in the seat # # 4 · Technology…, and the conductivity becomes low, and then with the precipitate), resulting in bending workability, =: Plutonium particles (crystalline materials, N1 •… deteriorates the etchability and plating properties. Because of the N1; the degree is set to 10 ~ 4 w ·. 勹 · U 4 · 5%, the concentration of Sl is set to 0.25 ~ 1.5% degree ratio. If the amount of Golo N1 and the amount of solid solution Si decrease in 11, the conductivity will increase. The amount of solid solution Ni will increase. The solution will be refined. NhSl will be precipitated to make the solution. And increase the conductivity. The solid U 4 Si after ageing * 'is based on the formula 1 of the material product described later

增減。例如,若人A σ金中之Ni濃度與Si濃度比([Ni]/[Si]) s加’則固溶N i量姆a 、〜 於佔道命杰 θ加而固〉谷Sl量減少。另一方面,對 ;使導電率降低之影趣 來得大。目此,賦予曰/’固^1量較固溶^量之影響 Ν. ς.. 戒予最大導電率之[Ni]/[Si],與析出物 N必中之Ni/Si比(=4..18)不一致。 了 γΓ=等藉實驗探卿/叫與供電率之關係,為 又二ΙΛ广必須將叫/[Si]調整之4〜6之範圍間’ 又以5周整至4.2〜4 7 N ·之範圍内為最佳。此組成,為對於 之、、且成,Ni有些許過剩。 [Ni]/[Si]未滿4日卑,士认 % , 蛉由於固溶Si量增加,除導電率 顯者降低外,於進行埶卢 …、處理呀,在材料表面容易生成Si氧 而成為焊接性與鑛敷性變差之原因。另一方面,若 [Ν1 ] / [ S i ]超過6,則由於㈤、々 曰 之導電率。 由於固洛I置增加,無法得到期望 關於式1Increase or decrease. For example, if the ratio of the Ni concentration to the Si concentration in human A σ gold ([Ni] / [Si]) s plus', then the solution N i amount um a, ~ will increase and solidify as the amount of θ θ> the amount of solid Sl cut back. On the other hand, the fun of reducing the conductivity is great. At this point, the influence of the amount of / 'solid ^ 1 compared to the amount of solid solution ^ is given to N. ς .. [Ni] / [Si], the maximum conductivity, and the Ni / Si ratio in the precipitate N (= 4) ..18) Inconsistent. In order to explore the relationship between γΓ and other factors and the power supply rate through experiments, in order to adjust the range of 4/6, we need to adjust the / [Si] again, and then adjust it to 4.2 ~ 4 7 N in 5 weeks. Within range is best. This composition has a slight excess of Ni in order to achieve this. [Ni] / [Si] is less than 4 days old, and it is recognized as%, 蛉 Since the amount of solid solution Si increases, in addition to the significant decrease in electrical conductivity, it is necessary to carry out processing ..., processing, it is easy to generate Si oxygen on the surface of the material, and It is the cause of the deterioration of weldability and ore depositability. On the other hand, if [N1] / [Si] exceeds 6, it is due to the conductivity of ㈤ and 々. Due to the increase of Glow I, it cannot be expected.

Cu-Ni-Si 合今,你 μ , 、糸精由析出NhSi粒子而提昇強度。 如刖所述,由導電率之&amp; 丰之镜點來看,對於Ni2Si組成,Ni量 以有些許過剩者較佳。 如此Nl過多之情形,以往之看法係 將Ν12S1粒子之析屮吾4 厅出里視為由Si濃度決定。亦即,在Ni 過剩組成之情形中,將羊 將日守效後之強度以Si濃度決定。 本發明人等以可错$丨古 枝線 j阿導电率之Ni過剩組成作為基礎 ’持續研究關於Ni及ς;、曲ώ t 及Sl〉辰度與強度之關係,結果發現, 即使S1濃度相同,一曰 —改受[Ni]/[Si],在該比例大時, 可產生數十MPa之強度,又 又可知Si濃度與強度不一定相 200426232With Cu-Ni-Si combined, your μ,, and saccharin will increase the strength by precipitating NhSi particles. As described in 刖, from the point of view of the &amp; abundance of electrical conductivity, for the Ni2Si composition, the amount of Ni is preferably a little excess. In the case of too much Nl, the previous view is that the analysis of N12S1 particles is considered to be determined by the Si concentration. That is, in the case of an excessive Ni composition, the strength after the day of the sheep's conservation is determined by the Si concentration. The inventors et al. Based on the excess Ni composition that can be misaligned with the conductivity of the Guzhi line, and continued to study the relationship between Ni and Ni, Qu, T, and Sl> and strength, and found that even S1 concentration The same, one said-changed by [Ni] / [Si], when this ratio is large, it can produce a strength of tens of MPa, and it can be known that the Si concentration and strength are not necessarily the same. 200426232

關。換g之’可知決定扎以析出量之參數並非S 於是’以考慮炫解度積作為基礎進行實驗數據::。 ’其結果,由⑽與81濃度以及Ni2Si之析出量二解析 得到下列之實驗式。 關係可 (式1) ([Ni] - )2 ( [Si] 1 ) 於析出之Si濃度;4尤相當於析出之1 0,X相當 ⑽]相當於固溶之Ni濃度;([si;;:因此’ 於固溶之Si濃度。 % )相當 時效後之強度與/有強烈之相關性。亦即,將 至適當之值可得到所欲之強度,因此亦可利用、尤調整 與叫調整為適當之值。如上所述,導入所“將[νπ #、一 - - 不析出狀 在此,&quot;系表示析出量之參數。更具體來:1, 濃度 態之參數%,且根據熔解度積之關係調整Ni盘/ ,以控制時效後強度之技術,於本發明中初次被發1之 炫解度積之值(式1的右邊),係根據溫度之函數 溫時其值小’亦即’雖然在低溫進行時效處理時^ 析出物之量變多,而可得到高強 s兩上 1蚁“β” 強度且同導電率之材料,但 …在平衡狀態之理論而已。低溫時1 了將金屬 材料進行時效處理直到平衡狀態, 而要成近無限長的時效 和^本發明人等調查各種組成與析出狀態,日月白工業上 :時效處理其熔解度積之適當值4 1/8,而當此…值 ::·卜0.45時,可得到在工業上安定之高強度、高導電率 材料。 10 200426232turn off. For g ', we can know that the parameter that determines the amount of precipitation is not S. So, the experimental data is based on considering the dazzling degree product ::. As a result, the following experimental formula was obtained from the two analysis of the concentration of rhenium and 81 and the amount of Ni2Si precipitated. The relationship can be (Equation 1) ([Ni]-) 2 ([Si] 1) in the precipitated Si concentration; 4 is particularly equivalent to the precipitated 10, and X is equivalent to ⑽] is equivalent to the solid solution Ni concentration; ;: 'Therefore, the concentration of Si in solid solution.%) The strength after considerable aging and / has a strong correlation. That is, the desired intensity can be obtained by reaching an appropriate value, so it can also be adjusted to an appropriate value by using, in particular, adjusting and calling. As mentioned above, the introduction of "[ππ #, a--is not precipitated here," is a parameter indicating the amount of precipitation. More specifically: 1, the parameter% of the concentration state, and adjusted according to the relationship of the melting degree product Ni plate / is a technology that controls the strength after aging. In the present invention, the value of the dazzle resolution product 1 (right side of formula 1) was issued for the first time, and its value is small according to the function of temperature. When the aging treatment is performed at a low temperature, the amount of precipitates increases, and a material with high strength and 1 ant "β" strength and the same conductivity can be obtained, but ... the theory of equilibrium is only. At low temperature, the aging of metal materials is performed. The process until it reaches the equilibrium state, and it will have a nearly infinite aging time. ^ The present inventors investigated various compositions and precipitation states. In the sun, moon, and white industry: the aging process has an appropriate value of the melting product of 4 1/8, and when ... Value :: · When the value is 0.45, high-strength, high-conductivity materials that are industrially stable can be obtained. 10 200426232

Mg具大幅改善庫六 口應力緩和特性 之效果,但濃度若未滿〇 〇5%, 放果及改善熱加工性 過0.30%,則鑄造性(禱物表^^無*得到該效果;若超 鍍敷耐熱剝離性變差,故λ/Γ °〇貝之降低)、熱加工性與 Zn、Sn、Fe、Ti、z 為⑽%〜請。Mg has the effect of greatly improving the stress relaxation characteristics of the six mouths of the reservoir, but if the concentration is less than 0.05%, the fruit release and the improvement of hot workability are over 0.30%, then the castability (prayer table ^^ None * will obtain this effect; if The super-plating has poor heat resistance and peeling resistance, so λ / Γ °° is reduced), hot workability and Zn, Sn, Fe, Ti, z are ⑽% ~ Please.

Zn、Sn、Fe、Ti、心、 呈有改盖 Γυ-isj· c·入 !、P、Μη、Ag 與 Be, 2 ° 卜1a金之強度與耐熱性之作用。又,苴 中Zn亦有改善焊接之耐孰作用又其Zn, Sn, Fe, Ti, heart, and cover are changed Γυ-isj · c · in! , P, Mη, Ag, and Be, 2 ° The effect of the strength and heat resistance of 1a gold. In addition, Zn in rhenium also improves the resistance to rhenium in welding.

Jh jr ^ m m . 、 效果,Fe亦有使組織微細 化之效果。再者,Ti、Zr Μ 立拂i〆 人Mn具有改善熱軋性之效 果。其理由,係該等元素盥炉 人 /、π之親和性強,故與硫形成化 合物,而可減輕造成埶軋妒涫 ^ ^ 风…軋裂痕原因之硫朝鑄錠粒界之偏析 。§ Zn、Sn、Fe、丁i、Zr、rv a i 、曲洛地Θ i Γ、A卜P、Mu、Ag與Be之 痕度總1未滿〇·⑽5%時,無法得到上述效果;若總含量超 過2.0。/❶時,則導電性顯著降低。在此,將其含量之總量定 為 0.005〜2.0% 〇 實施例 接著次明關於本發明之實施例。在大氣溶解爐中溶製 如表1所不之各種成分組成之銅合金,鑄造厚度為3 0rnm 之鑄錠。 200426232 表1Jh jr ^ m m., Fe, also has the effect of making the structure finer. In addition, Ti and Zr Μ 拂 〆 〆 person Mn has the effect of improving hot rolling properties. The reason is that these elements have a strong affinity for people and π, so they form compounds with sulfur, which can reduce the segregation of sulfur toward the ingot grain boundary caused by wind jealousy ^ ^ wind ... rolling cracks. § Zn, Sn, Fe, Ding, Zr, rv ai, Trolodi Θ i Γ, A P P, Mu, Ag, and Be total less than 1 ·· 5%, the above effects cannot be obtained; if The total content exceeds 2.0. / ❶, the conductivity is significantly reduced. Here, the total content is set to 0.005 to 2.0%. EXAMPLES Examples of the present invention will be described next. Copper alloys with various components as shown in Table 1 are dissolved in an atmospheric melting furnace, and ingots with a thickness of 30 nm are cast. 200426232 Table 1

No. 成分(質量%) Ni/Si 拉伸強度 導電率 Ni Si Mg 添加物 重量比 判定 (質量%) 判定 MPa %IACS 發 明 例 1 1.32 0.32 - - 4.1 〇 0.138 〇 723 51.6 2 1.61 0.35 0.19 - 4.6 〇 0.194 〇 736 50.9 3 1.83 0.36 - - 5.1 〇 0.229 〇 755 50.6 4 1.92 0.43 0.14 - 4.5 〇 0.27 〇 742 52.5 5 2.61 0.55 - - 4.7 〇 0.417 〇 785 45.3 6 2.45 0.49 0.2 - 5.0 〇 0.369 〇 770 47.3 7 1.90 0.45 0.08 0.14Zn 0.05Sn 4.2 〇 0.274 〇 767 45.2 8 2.18 0.49 0.2 O.OlAg 4.4 〇 0.331 〇 771 46.8 9 2.74 0.49 - 0.08P 5.6 〇 0.401 〇 775 45.4 10 1.57 0.32 - 0.007Cr 0.02Zr 4.9 〇 0.176 〇 734 50.8 11 3.01 0.52 - 0.2Be 5.8 〇 0.444 〇 789 47.2 12 2.58 0.55 - 0.05Ti 4.7 〇 0.413 Ο 793 50.0 13 2.64 0.61 - O.OIMn 0.05A1 4.3 〇 0.445 〇 799 45.1 比 較 例 14 3.98 0.71 - - 5.6 〇 0.648 X 791 36.6 15 1.20 0.26 - - 4.6 〇 0.099 X 554 50.1 16 4.32 1.08 0.15 - 4.0 〇 0.868 X 799 36.1 17 2.23 0.68 - - 3.3 X 0.392 〇 792 35.7 18 2.45 0.39 0.21 - 6.3 X 0.313 〇 749 37.2 19 2.86 0.89 0.09 - 3.2 X 0.553 X 784 32.1 20 2.18 0.65 0.45 - 3.4 X 0.377 〇 - - 21 4.02 0.94 - 2.04Fe 4.3 〇 0.775 X 753 25.2 22 2.80 0.47 - 0.78A1 1.43Sn 6.0 〇 0.394 〇 802 24.6 23 3.61 0.88 0.33Cr 0.28Zr 1.45Zn 4.1 〇 0.690 X 812 21.6No. Component (mass%) Ni / Si Tensile strength Electrical conductivity Ni Si Mg Additive weight ratio judgment (mass%) Judgment MPa% IACS Invention example 1 1.32 0.32--4.1 〇0.138 〇723 51.6 2 1.61 0.35 0.19-4.6 〇0.194 〇736 50.9 3 1.83 0.36--5.1 〇0.229 〇755 50.6 4 1.92 0.43 0.14-4.5 〇0.27 〇742 52.5 5 2.61 0.55--4.7 〇0.417 〇785 45.3 6 2.45 0.49 0.2-5.0 〇0.369 〇770 47.3 7 1.90 0.45 0.08 0.14Zn 0.05Sn 4.2 〇0.274 〇767 45.2 8 2.18 0.49 0.2 O.OlAg 4.4 〇0.331 〇771 46.8 9 2.74 0.49-0.08P 5.6 〇0.401 〇775 45.4 10 1.57 0.32-0.007Cr 0.02Zr 4.9 〇0.176 〇 734 50.8 11 3.01 0.52-0.2Be 5.8 〇0.444 〇789 47.2 12 2.58 0.55-0.05Ti 4.7 〇0.413 〇 793 50.0 13 2.64 0.61-O.OIMn 0.05A1 4.3 〇0.445 〇799 45.1 Comparative Example 14 3.98 0.71--5.6 〇 0.648 X 791 36.6 15 1.20 0.26--4.6 〇0.099 X 554 50.1 16 4.32 1.08 0.15-4.0 〇0.868 X 799 36.1 17 2.23 0.68--3.3 X 0.392 〇792 35.7 18 2.45 0.39 0.21-6.3 X 0.313 〇749 37.2 19 2.86 0.89 0.09-3.2 X 0.553 X 784 32.1 20 2.18 0.65 0.45-3.4 X 0.377 〇--21 4.02 0.94-2.04Fe 4.3 〇0.775 X 753 25.2 22 2.80 0.47-0.78A1 1.43Sn 6.0 〇0.394 〇802 24.6 23 3.61 0.88 0.33Cr 0.28Zr 1.45Zn 4.1 〇0.690 X 812 21.6

12 20042623212 200426232

接著進行熱軋至厚度為9inra,為了去除 订平面切削後,藉冷乳製成厚lmm之板。之後 ⑽㈣代之溫度進行溶體化處理,冷軋至厚度# “二 。接:針對各合金之組成,於拉伸強度最大之溫度下進行 3 J 4之%效處理。此溫度係介於4〇〇〇c〜6〇〇〇c之範圍内。 :者’以冷軋製成厚度為〇·25_之板。最終熱處理後之樣 品之強度,係根據拉伸測試機測得之拉伸強度進行評價。 導電性,係根據四端子法之導電率(%IACS)進行評價估。又 ^[Ni]/[Si]與%值係以在請求項丨之範圍内者為(〇);在 範圍外者為(X)來進行評價。結果如表1所示。 主由表1可知發明例No」〜No l3其[Ni]/[Si]與%值均 在月长員1之範圍内。因此,發明例之拉伸強度在 以上、導電率在45%IACS以上,而具有高強度與高導電性 又,即使在為了改善應力緩和特性而添加Mg之發明例Next, it was hot-rolled to a thickness of 9 inra. After cutting in order to remove the flat surface, cold milk was used to make a plate with a thickness of 1 mm. The solution temperature is then subjected to solution treatment, and cold rolled to a thickness of # "II. Then: For the composition of each alloy, the 3% 4% effective treatment is performed at the temperature of the maximum tensile strength. This temperature is between 4 〇〇〇c ~ 600〇c range .: or 'cold-rolled into a thickness of 0.25__. The strength of the sample after the final heat treatment, according to the tensile test machine tensile test The strength is evaluated. The conductivity is evaluated based on the conductivity of the four-terminal method (% IACS). Also, the value of [Ni] / [Si] and% is within the range of the requested item (0); Those outside the range are evaluated as (X). The results are shown in Table 1. Mainly from Table 1, it can be seen that the invention examples No "to No l3, whose [Ni] / [Si] and% values are in the range of month senior 1. Inside. Therefore, the invention examples have a tensile strength of more than 45% and an electrical conductivity of 45% IACS or more, and have high strength and high electrical conductivity. In addition, the invention examples have Mg added to improve the stress relaxation properties.

No· 2 4 6、7、8中,亦與未添加Mg者同樣的可得到高 強度與高導電率。 再者’雖然發明例Νο·7〜13(添加Zn、Sn、Fe、Ti、Zr 、cr、A1、P、Mn、Ag或Be中!種以上且總量為 0.005〜2·0%)其導電性較未添加之發明例N〇.卜6之導電性 稍差,但強度方面則優異。 另一方面’麥考比較例,由於No. 14與1 6之%值高於 〇· 45 ’故強度未明顯增加,而導電率變低。此乃因生成了 對強度無貝獻之粗大N i 一s i系粒子(結晶物與析出物)所致 13 200426232 。雖然No. 15具高導電率,但代表析出量之χ值低,故強 度變低。No· 17,因其[Ni]/[Si]低,使Si過剩而導致導電 率變低。No· 18,因其[Ni]/[Si]高,使固溶Ni變多,導致 導電率變低。No· 19之χ值高,且[Ni]/[Si]低,使導電率 顯著變低。In No. 2 4 6, 7, and 8, the same high strength and high electrical conductivity were obtained as those in which Mg was not added. Furthermore, although the invention example No. 7 ~ 13 (add Zn, Sn, Fe, Ti, Zr, cr, A1, P, Mn, Ag or Be! More than one kind and the total amount is 0.005 ~ 2.0%) The conductivity is slightly inferior to that of the invention example No. 6 which is not added, but it is excellent in strength. On the other hand, in the "Micau Comparative Example", since the% values of Nos. 14 and 16 were higher than 0.45, the strength did not increase significantly, and the conductivity decreased. This is due to the formation of coarse Ni-Si particles (crystals and precipitates) with no contribution to the strength 13 200426232. Although No. 15 has high conductivity, the value of χ representing the amount of precipitation is low, so the strength becomes low. No. 17, because of its low [Ni] / [Si], causes excess Si to cause low conductivity. No. 18, because of its high [Ni] / [Si], increases the amount of solid solution Ni, resulting in a low conductivity. The high χ value of No. 19 and the low [Ni] / [Si] make the conductivity significantly lower.

No· 20 ’由於Mg之添加量過多,使熱軋之加工性差而 產生裂痕,無法繼續進行後續製程。 在 Νο·21 〜23 中,由於在添加 Zn、Sn、Fe、Ti、Zr、Cr* 、Al、P、Μη、Ag或Be中1種以上時之添加總量超過2. 〇% ,故導電性顯著變差。 如上所述,本發明之合金,具有良好之強度與導電性 ,而適用於作為導線架、端子、連接器等之電子材料用鋼 合金。 【圖式簡單說明】 益No. 20 'Because the addition amount of Mg is too large, cracking occurs due to poor workability of hot rolling, and subsequent processes cannot be continued. In No. 21 ~ 23, since the total amount of addition when adding more than one of Zn, Sn, Fe, Ti, Zr, Cr *, Al, P, Mη, Ag, or Be exceeds 2.0%, so conductive Significant deterioration in sex. As described above, the alloy of the present invention has good strength and electrical conductivity, and is suitable for use as a steel alloy for electronic materials such as lead frames, terminals, and connectors. [Schematic description]

Claims (1)

200426232 拾、申請專利範圍: 1. 一種兼具高強度與高導電性之Cu-Ni-Si合金,其特 徵在於,係含有 Ni 1·0〜4.5質量%(以%表示)、Si 0.25〜1.5%,其餘為由Cu與無法避免之雜質而構成之銅基 合金,在以[Ni]、[Si]表示Ni與Si之質量濃度時,Ni與 Si之質量濃度比(以[Ni]/[Si]表示)為4〜6,且式1所定義 之;為 0 · 1 〜0 · 4 5 ([Ni] - )2 ( [Si] -^) = 1/8 (式 1)。 2. 如申請專利範圍第1項之Cu-Ni-Si合金,其中含有 Mg 0. 05〜0· 3% 〇 3. 如申請專利範圍第1或2項之Cu-Ni-Si合金,其中 含有擇自 Zn、Sn、Fe、Ti、Zr、Cr、Al、P、Mn、Ag 或 Be 中1種以上且總量為0. 005〜2. 0°/〇。 拾壹、圖式:200426232 Scope of patent application: 1. A Cu-Ni-Si alloy with high strength and high conductivity, characterized in that it contains Ni 1 · 0 ~ 4.5% by mass (expressed as%), Si 0.25 ~ 1.5 %, The rest are copper-based alloys composed of Cu and unavoidable impurities. When [Ni], [Si] represents the mass concentration of Ni and Si, the mass concentration ratio of Ni to Si (as [Ni] / [ (Si] represents) is 4 to 6, and is defined by Formula 1. It is 0 · 1 to 0 · 4 5 ([Ni]-) 2 ([Si]-^) = 1/8 (Formula 1). 2. For example, the Cu-Ni-Si alloy with the scope of patent application No. 1 contains Mg 0.05 to 0.3% 〇3. With the Cu-Ni-Si alloy with the scope of patent applications No. 1 or 2, it contains 0 ° / 〇。 Selected from Zn, Sn, Fe, Ti, Zr, Cr, Al, P, Mn, Ag or Be, and the total amount is 0.005 to 2. 0 ° / 〇. Pick up, schema: 無 15 200426232 柒、指定代表圖: (一) 本案指定代表圖為:第(無)圖。 (二) 本代表圖之元件代表符號簡單說明: 無 捌、本案若有化學式時,請揭示最能顯示發明特徵的化學式None 15 200426232 柒. Designated representative map: (1) The designated representative map in this case is: (none) map. (2) Brief description of the representative symbols of the components in this representative drawing: None 捌 If there is a chemical formula in this case, please disclose the chemical formula that can best show the characteristics of the invention
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JP4584692B2 (en) * 2004-11-30 2010-11-24 株式会社神戸製鋼所 High-strength copper alloy sheet excellent in bending workability and manufacturing method thereof
JP4494258B2 (en) * 2005-03-11 2010-06-30 三菱電機株式会社 Copper alloy and manufacturing method thereof
JP4838524B2 (en) * 2005-03-30 2011-12-14 株式会社神戸製鋼所 Copper alloy material for electrical and electronic parts
CN100386456C (en) * 2005-06-13 2008-05-07 沈阳市振兴电线厂 Special silicon bronze alloy and process for preparing same
JP4655834B2 (en) * 2005-09-02 2011-03-23 日立電線株式会社 Copper alloy material for electrical parts and manufacturing method thereof
JP2007246931A (en) * 2006-03-13 2007-09-27 Furukawa Electric Co Ltd:The Copper alloy for electrical and electronic equipment parts having excellent electric conductivity
JP4143662B2 (en) * 2006-09-25 2008-09-03 日鉱金属株式会社 Cu-Ni-Si alloy
TWI440727B (en) * 2010-12-13 2014-06-11 Nippon Seisen Co Ltd Copper alloy wire and copper alloy spring
CN102876915A (en) * 2012-09-27 2013-01-16 无锡宏昌五金制造有限公司 High-conductivity copper alloy material and preparation method thereof
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CN103014410B (en) * 2012-12-24 2015-03-11 山西春雷铜材有限责任公司 Copper alloy and fabrication method thereof
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JP6468766B2 (en) 2014-09-11 2019-02-13 株式会社ダイヤメット Sintered sliding material with excellent corrosion resistance, heat resistance and wear resistance, and method for producing the same
CN104404295A (en) * 2014-12-25 2015-03-11 春焱电子科技(苏州)有限公司 Copper alloy for electronic material
CN104726744B (en) * 2015-03-17 2016-10-05 太原晋西春雷铜业有限公司 A kind of etching copper alloy frame material band and preparation method thereof
EP3424623B1 (en) 2016-03-04 2023-03-29 Diamet Corporation Cu-based sintered sliding material and production method therefor
CN106399748B (en) * 2016-10-05 2018-01-23 宁波兴业盛泰集团有限公司 A kind of cupro-nickel Si system alloy material used for lead frame and preparation method thereof
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Family Cites Families (4)

* Cited by examiner, † Cited by third party
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JP3404278B2 (en) 1998-01-29 2003-05-06 日鉱金属株式会社 Cu-Ni-Si based copper base alloy with improved annealing cracking
JPH11264040A (en) 1998-03-18 1999-09-28 Nippon Mining & Metals Co Ltd Copper alloy foil
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