TW200409728A - Carbon nanotubes, methods and apparatus for making the same - Google Patents
Carbon nanotubes, methods and apparatus for making the same Download PDFInfo
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200409728 五、發明說明（1) _ 【發明所屬之技術領域】 本發明涉及一種奈米材料及其 · 奈米材料之裝置，特別涉及一種碳夺总/貫現製備該 實現製備該碳奈米管之裝置。 不/、s及其製備方法及 【先前技術】 碳奈米管係九十年代初才發現的一 料。；奈米管之特殊結構決定其具有特殊維f = 張強度及高熱穩定性；隨著碳奈米管蟫 $貝，如南抗 奈米管可呈現出金屬性或半金屬性等。 =之變化，碳 特之機械及電學性質，其在材料科學、化；於:炭奈米管獨 叉學科領域具有廣闊之應用前景，可用:物理學等交 J ^ J用作％發射哭件、白 光源、鋰二次電池、儲氫電池、陰極射線管或=轉命 子發射源等。 日日版之包 先前技術中碳奈米管之製備方法主要係由〗9 9丨年§200409728 V. Description of the invention (1) _ [Technical field to which the invention belongs] The present invention relates to a nano material and a device for the nano material, and more particularly to a carbon capture / current production method for realizing the preparation of the carbon nano tube. Of the device. No /, s, its preparation method and [prior art] Carbon nano tube system was discovered only in the early 1990s. ; The special structure of the nano tube determines that it has a special dimension f = tensile strength and high thermal stability; with the carbon nano tube 蟫 $ shell, such as Nankang nano tube can appear metallic or semi-metallic. = The change, the mechanical and electrical properties of carbon special, which is in the field of material science, chemical industry; in: carbon nanometer tube forked subject has broad application prospects, can be used: physics, etc. J ^ J as a% emission cry , White light source, lithium secondary battery, hydrogen storage battery, cathode ray tube or = life span emission source. Japanese-Japanese version of the package The carbon nano tube preparation method in the prior art is mainly from 〖9 9 丨 year§
Iijima在Nature， 354， 56， Helical microtubules 〇f graphitic car bon上公開之電弧放電法，l 992年τ· w· Ebbe^sen 等人在Nature，358，220，Large-scale Synthesis of Carbon Nanotubes上公開之雷射燒敍法及 1 99 6 年 W· Ζ· Li 等人在 Science，2 74， 1701，Large-Arc discharge method disclosed by Iijima in Nature, 354, 56, Helical microtubules 0f graphitic car bon, τ · w · Ebbe ^ sen et al., 992, Nature, 358, 220, Large-scale Synthesis of Carbon Nanotubes Laser Stories and W · Z · Li et al. Science, 2 74, 1701, Large-
Scale Synthesis of Aligned Carbon Nanotubes上公開 之化學氣相沈積法等。 同位素標示方法係研究奈米材料生長機理及奈米尺寸 同位素結之有力工具，其係利用在奈米材料之合成過程 中，將含有某一特定元素（一般係輕元素，如碳、删、氮Chemical vapor deposition method and the like disclosed on Scale Synthesis of Aligned Carbon Nanotubes. The isotope labeling method is a powerful tool for studying the growth mechanism and nanometer size of nanomaterials. It is used in the synthesis of nanomaterials and will contain a specific element (generally light elements such as carbon, carbon, nitrogen, and nitrogen).
200409728 五、發明說明（2)200409728 V. Description of Invention (2)
或氧）之同位素的反應物按照預定之濃戶 物之形式)及順序使其參與反應，從：f以純物質或混合 同位素標示之奈米材料。 、出原位生長之D 及到 然而，上述三種製備碳奈米管之方 摻有同位素之碳奈米管之合成。 /中均沒有涉 [内容】 之不足 综上所述’為克服先前技術中碳奈总 足，本發明提供一種摻有同位素二;I未，有同位素 為克服先前技術中碳奈米管之製備=不，首。 同位素之碳奈米管之不足，本發明提俾 2然去製傷摻有 奈米管之製備方法。 種摻有同仅素： 為克服先前技術中製備壤奈米營 & ^ 命、、冬在,丨 同位素之碳奈米管之不足，本發明提供絲Γ丨、衣傷摻有 素碳奈米管之裝置。 k供-種製備穆有同位 本發明解決上述技術問題之技術手段· 同位素之碳奈米管包括由單一同位素組成之第—碳 片段戍第二碳奈米管片段，該第一碳奈米管片段及二 奈米管片段沿碳奈米管交替排列。 夂 為製備上述推有同位素之礙奈米管，本發明提供的第 一種製備方法包括如下步驟：提供含有單一同位素之第一 石炭源氣及弟一 $厌源氣’ k供其上沈積有催化劑的基底，並 將該基底置入反應室中；將該反應室抽成真空，通入預定 壓力之保護性氣體；在6 5 0〜7 5 0 °C的反應條件下，使第一 碳源氣提供的碳的同位素發生反應並使反應生成的第一碳Or oxygen) isotope reactants in the form of a predetermined concentration of households) and order them to participate in the reaction, from: f nanomaterials labeled as pure substances or mixed isotopes. However, the in-situ growth of D and carbon nanotubes, however, is the synthesis of carbon nanotubes doped with isotopes. / In the absence of [content], in summary, 'To overcome the total carbon nano foot in the prior art, the present invention provides a doped with isotopes II; I, there is an isotope to overcome the preparation of carbon nano tubes in the prior art = No, first. The shortcomings of carbon nanotubes with isotopes are described in the present invention, and the method for preparing wounded nanotubes is described. Species doped with isotopes: In order to overcome the shortcomings of carbon nanotubes in the preparation of soil carbon nano-amplifiers in the prior art, and the isotope, the present invention provides silk Γ 丨 and clothing wounds doped with carbon-based carbon. Device of rice tube. k-supply-a method for preparing the isotope of the present invention to solve the above technical problems · An isotope carbon nanotube includes a first carbon segment consisting of a single isotope, a second carbon nanotube segment, and the first carbon nanotube The fragments and the two nano tube fragments are alternately arranged along the carbon nano tube.制备 In order to prepare the above-mentioned obstructed nanometer tube with isotope, the first preparation method provided by the present invention includes the following steps: providing a first carbon source gas containing a single isotope and a source of anorectic gas. The substrate of the catalyst, and the substrate is placed in the reaction chamber; the reaction chamber is evacuated, and a protective gas of a predetermined pressure is passed; under the reaction conditions of 650 to 750 ° C, the first carbon The carbon isotope of the source gas reacts and makes the first carbon produced by the reaction
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五、發明說明（3) 將碳源切 使第二 峻奈米管 有同位素 奈米管片段沈積於該基底上；反應預定時間後 換至第二碳源氣上，在6 5 0〜7 5 0 °C的反應條件下 碳源氣提供的碳的同位素發生反應，生成的第_ 片段生長於第一碳奈米管片段之上，從而得到^ 之破奈米管。 為製備上述播有同 二種製備方法包括如下 碳源及第二碳源，第一 相連；提供普通純碳棒 一碳源及第二碳源與普 2ιϊιπι，並放入反應室中 壓力之保護性氣體；在 使第一碳源提供的碳的 一碳奈米管片段沈積于 後，將碳源切換至第一 條件下’使第二碳源i 第二f碳奈米管片段生長 到摻有同位素之碳奈米 為製備上述摻有同 三種製備方法包括如下 石炭源及第二碳源；提供 第二碳源與該碳奈米管 米管收集裳置置於第一 室抽成真空，通入預定 ::之碳奈米f，本發明提供的第 二驟·提供含有單一同位素之第一 碳源及第二碳源分別與電源之正極 並將其與電源之負極相連；將第 通純碳棒相對而置，相距1 5〜 ;將該反應室抽成真空，通入預定 放電電流90〜11 0A的反應條件下， 同位素發生反應並使反應生成的第 該普通純碳棒上；反應預定時間 碳源，在放電電流9〇〜ποα的反應 供的碳的同位素發生反應，生成的 於第一碳奈米管片段之上，從而得 管。 位素之碳奈米管，本發明提供的第 步驟：提供含有單一同位素之第一 碳奈米管收集裝置；將第一碳源及 收集裝置放入反應室中，並使碳奈 石厌源及第二碳源之一側；將該反應 壓力之保護性氣體；加熱第一碳源V. Description of the invention (3) The carbon source is cut so that the second nano-tube has isotopic nano-tube fragments deposited on the substrate; after a predetermined reaction time, it is switched to the second carbon source gas at 6 5 0 ~ 7 5 The carbon isotope provided by the carbon source gas reacts at a reaction condition of 0 ° C, and the generated _ fragment grows on the first carbon nanotube segment, thereby obtaining a broken nano tube. In order to prepare the above-mentioned two kinds of preparation methods, the following carbon sources and a second carbon source are connected to the first; an ordinary pure carbon rod, a carbon source and a second carbon source are provided, and the general carbon source is placed in the reaction chamber to protect the pressure. Gas; after depositing a carbon nanotube segment of carbon provided by the first carbon source, the carbon source is switched to the first condition to 'grow the second carbon source i to the second f carbon nanotube segment to To prepare carbon nanometers with isotopes, the same three preparation methods are included, including the following carbon source and a second carbon source; providing a second carbon source and the carbon nanometer tube and the tube are collected and placed in the first chamber to be evacuated. Into the schedule :: carbon nano f, the second step provided by the present invention provides a first carbon source and a second carbon source containing a single isotope with the positive pole of the power source and connects it to the negative pole of the power source; The carbon rods are opposite to each other, 15 ~ away from each other; the reaction chamber is evacuated and a predetermined discharge current of 90 ~ 110A is passed, and the isotopes react and cause the reaction to form the ordinary pure carbon rod; Carbon source at predetermined time, at discharge current 9 The reaction of 〇 ~ ποα reacts with the isotope of the supplied carbon, and is generated on the first carbon nanotube segment, thereby obtaining a tube. Isotope carbon nanotubes, the first step provided by the present invention is to provide a first carbon nanotube collection device containing a single isotope; put the first carbon source and the collection device into the reaction chamber, and make the sootite anaerobic And one side of the second carbon source; a protective gas at the reaction pressure; heating the first carbon source
200409728 五、發明說明（4) 及第二碳源所在區域之溫度至1000〜1200 °C ;用置於第一 碳源與第二碳源另一側之脈衝雷射照射第一碳源，使第一 碳源提供的碳的同位素發生反應並使反應生成的第一碳奈 米管片段沈積於該碳奈米管收集裝置上；反應預定時間 後，將碳源切換至第二碳源，用脈衝雷射照射第二碳源， 使第二碳源提供的碳的同位素發生反應，生成的第二碳奈 米管片段生長於第一碳奈米管片段之上，從而得到摻有同 位素之碳奈米管。 為實現上述製備摻有同位素碳奈米管之方法，本發明 提供的製備摻有同位素碳奈米管之裝置包括：具有氣體輸 入通道及排氣通道之反應室，供給反應所需能量之能量供 應裝置，含有單一同位素之第一碳源及第二碳源，用於切 換第一碳源及第二碳源使第一碳源及第二碳源交替參與反 應之切換裝置。 與先前技術相比較，本發明提供之方法可製備由不同 的碳同位素交替生長之碳奈米管，從而可用拉曼光譜記錄 碳同t位素原位生長之圖案，進而研究碳奈米管之生長機 理，同時也可用本發明提供之方法合成含有輕元素成份之 一維奈米材料及含有同位素異質結之一維奈米材料。 【實施方式】 請參閱第一圖，本發明之摻有同位素之碳奈米管4 0包 括由12C組成之碳奈米管片段4 02及由13C組成之碳奈米管片 段4 04，碳奈米管片段402及404沿碳奈米管交替排列。在 本發明之優選實施例中製備之該摻有同位素之碳奈米管4 0200409728 V. Description of the invention (4) and the temperature of the area where the second carbon source is located to 1000 ~ 1200 ° C; irradiate the first carbon source with a pulse laser placed on the other side of the first carbon source and the second carbon source, so that The carbon isotope provided by the first carbon source reacts and causes the first carbon nanotube segment generated by the reaction to be deposited on the carbon nanotube collecting device; after a predetermined time of the reaction, the carbon source is switched to the second carbon source, and The pulsed laser irradiates the second carbon source, so that the isotopes of the carbon provided by the second carbon source react, and the generated second carbon nanotube segment grows on the first carbon nanotube segment to obtain the carbon doped with the isotope. Nano tube. In order to realize the above method for preparing an isotope-doped carbon nanotube, the device for preparing an isotope-doped carbon nanotube provided by the present invention includes a reaction chamber having a gas input channel and an exhaust channel, and an energy supply for supplying energy required for the reaction The device includes a first carbon source and a second carbon source containing a single isotope, and is a switching device for switching the first carbon source and the second carbon source so that the first carbon source and the second carbon source alternately participate in the reaction. Compared with the prior art, the method provided by the present invention can prepare carbon nanotubes grown alternately with different carbon isotopes, so that Raman spectroscopy can be used to record the pattern of carbon isotope growth in situ, and further study the carbon nanotubes. The growth mechanism can also use the method provided by the present invention to synthesize a venemite material containing a light element component and a venemite material containing an isotopic heterojunction. [Embodiment] Please refer to the first figure. The isotope-doped carbon nanotube 40 according to the present invention includes a carbon nanotube segment 4 02 composed of 12C and a carbon nanotube segment 4 04 composed of 13C. The rice tube segments 402 and 404 are alternately arranged along the carbon nanotube. The isotope-doped carbon nanotubes prepared in a preferred embodiment of the present invention 40
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之長度為10〜1 0 0 0_，管之直徑為〇· 5〜5〇韻。 2明提供之第一種製備摻有同位素碳奈米管之方法 μ子氣相沈積法，請麥閱第二圖，其具體步驟如下： (1) 提供由12c及13c組成之乙烯氣體； (2) 提供基底132，該基底132上表面沈積有一層厚為 5⑽作為催化劑使用之鐵膜134，並將該沈積有催化劑鐵膜 134之基底132放入反應室no中； (3) 通過排氣通道116將反應室11〇抽真空後，再通過 就體輸入通迢118通入壓強為丨個大氣壓之氬氣，同時通過 反應爐106加熱反應室11()至其溫度達7〇(Kc ; (4) 打開閥門112，由氣體輸入通道1〇2通入流量為 120SCCIH，流速為1.2Cm/s的由％組成之乙烯氣體，反應生 成的由12C組成之碳奈米管片段（圖未示）沈積於該催化劑鐵 膜1 3 4上·， (5)反應預定時間後，關閉閥門112 ’打開閥門ιΐ4， 由氣體輸入通道104通入流量為12〇sccm，流速為12^/5 的由uc組成之乙烯氣體，由uc組成的碳奈米管片段（圖未 示）繼續生長於步驟（4)生成之由!2C組成之碳奈米管片段 上； (6)繼續反應預定時間後，將反應室11〇冷卻至室溫， 在催化劑鐵膜134上得到摻有同位素之碳奈米管。 可以理解’本方法中可以在步驟⑸後重複步驟⑷及 (5)得到父曰排列之#有同位素之碳奈米管；也可以用 钻、鎳或其他合適之催化劑代替鐵作為催化劑使用；也可The length of the tube is from 10 to 100, and the diameter of the tube is from 0.5 to 50. 2 The first method provided by Ming to prepare isotope-doped carbon nanotubes. Μ Vapor Deposition, please read the second figure. The specific steps are as follows: (1) Provide ethylene gas consisting of 12c and 13c; 2) A substrate 132 is provided, and an iron film 134 having a thickness of 5 ⑽ as a catalyst is deposited on the upper surface of the substrate 132, and the substrate 132 on which the catalyst iron film 134 is deposited is placed in the reaction chamber no. After the channel 116 evacuates the reaction chamber 110, argon gas having a pressure of 丨 atmospheric pressure is passed through the in-situ input passage 118, and the reaction chamber 11 () is heated through the reaction furnace 106 to a temperature of 70 (Kc; (4) Open the valve 112, and pass the gas input channel 102 into the ethylene gas composed of% with a flow rate of 120 SCCIH and a flow rate of 1.2 Cm / s, and a carbon nanotube tube composed of 12 C (not shown) ) Deposited on the catalyst iron film 134, (5) after a predetermined reaction time, the valve 112 'is closed, the valve ιΐ4 is opened, and the flow rate of 12 Sccm and the flow rate of 12 ^ / 5 through the gas input channel 104 Ethylene gas composed of uc, carbon nanotube segment composed of uc (not shown) Continue to grow on the carbon nanotube tube composed of! 2C generated in step (4); (6) After the reaction is continued for a predetermined time, the reaction chamber 11 is cooled to room temperature, and an isotope doped on the catalyst iron film 134 is obtained It can be understood that 'in this method, steps ⑸ and (5) can be repeated after step ⑸ to obtain the carbon nanotubes with isotopes arranged in the parent's name; drills, nickel or other suitable catalysts can also be used instead. Iron is used as a catalyst; it can also be used
200409728 五、發明說明（6) 用其他碳氫化合物，如甲烧、乙炔、丙二稀等代替乙稀作 為碳源氣使用，也可以採用氦氣、氮氣或氫氣等代巷气名 作為保護氣使用。 飞乳 本發明提供之第二種製備摻有同位素碳奈米管之方法 係電弧放電法，請參閱第三圖，其具體步驟如下： (1)用Ni (質量百分比濃度〇〜13%)和/或Υ2 03 (質量百分 比濃度0〜48%)之催化劑粉末與直徑為5mm的由i2c組成之高 純碳粉顆粒在3300〜380 0個大氣壓下壓成直徑為8〜12_之 碳棒2 0 2，用同樣之方法製成另一個由i3C組成之碳棒2〇4， 將碳棒202及204用絕緣膠203膠黏，分別與電弧放電源之 正極2 1 4相連作為陽極使用； (2 )用普通純碳棒與電弧放電源之負極2丨5相連作為陰 極2 0 8使用； ’ (3)將步驟（1)及（2)所製得之陽極及陰極2〇8相對而 置，相距1· 5〜2mm，放進電弧放電反應室21〇中，並通過排 氣通道216將電弧放電反應室21()抽真空後，再通過氣體輸 入通丨道218通進壓強為1〇〇〜5〇〇T〇rr之氦氣； ^ 將電開關21 2接通碳棒202，以90〜11 0A之電流進行 電弧放電’放電電壓為2〇〜4〇v，反應生成的由組成之碳 奈米官片段（圖未示）沈積於該陰極2〇8上； (5 )反應預定時間後，將電開關2 } 2接通碳棒2 〇 4，以 90〜110A之電流進行電弧放電，放電電壓為2〇〜4〇v，由％ 組成之碳奈米管片段（圖未示）繼續生長於步驟生成之 由12C組成之碳奈米管片段上；200409728 V. Description of the invention (6) Use other hydrocarbons, such as methylbenzene, acetylene, propane, etc. instead of ethene as the carbon source gas. You can also use helium, nitrogen or hydrogen as the protective gas. use. Flying milk The second method for preparing isotope-doped carbon nanotubes provided by the present invention is an arc discharge method. Please refer to the third figure. The specific steps are as follows: (1) Ni (mass percentage concentration 0 ~ 13%) and / Or Υ2 03 (mass percentage concentration 0 ~ 48%) catalyst powder and 5mm diameter high purity carbon powder particles composed of i2c are pressed into carbon rods with a diameter of 8 ~ 12_ at 3300 ~ 380 0 atmospheres 02, use the same method to make another carbon rod 204 composed of i3C, glue carbon rods 202 and 204 with insulating glue 203, and connect to the positive electrode 2 1 4 of the arc discharge power source as an anode; ( 2) The ordinary pure carbon rod is connected to the negative electrode 2 丨 5 of the arc discharge power source and used as the cathode 208; '(3) The anode and the cathode 208 obtained in steps (1) and (2) are opposite to each other 1 ~ 5 ~ 2mm apart, put into the arc discharge reaction chamber 21〇, and evacuate the arc discharge reaction chamber 21 () through the exhaust channel 216, and then pass through the gas input channel 218 to a pressure of 1〇 〇 ～ 500 ％ Torr of helium; ^ Turn on the electric switch 21 2 to the carbon rod 202, and perform arc discharge with a current of 90 ~ 110A The electric voltage is 20 ~ 40v, and the carbon nano-granular fragments (not shown) formed by the reaction are deposited on the cathode 208; (5) after a predetermined reaction time, the electric switch 2} 2 is connected The carbon rod was passed through 〇4, and arc discharge was performed at a current of 90 ~ 110A, the discharge voltage was 20 ~ 40v, and the carbon nanotube segment (not shown) composed of% continued to grow in the step, which was composed of 12C Carbon nano tube fragments;
第10頁 200409728 五、發明說明（7) (6)繼續反應預定日丰p i接 龄Λ η # _ ΠΓ步π + π 1 断消耗的陽極在陰極2〇8 上沈積下來形成摻有同位素之碳奈米管。 可以理解，本方法中可以在步驟（5) ⑸得到交替排列之摻有同位素之碳奈米管；及 :或：：鎳粉或者其他合適之催化劑與碳粉複 =用：ί氬氣'編氫氣等代替氦氣作為保 ί;=:ΐΓ將含有不同同位素之陽極以旋轉之方式 生『反應室上安有冷水管以免由於電 #帝ί i:ί供：第三種製備摻有同位素碳奈米管之方法 ’、田、k钱法’請參閱第四圖，其具體步驟如下： 卞/^1^/用ί鈷粉（質量百分比濃度2·8%)及鎳（質量百分比 ΐ二陸°粉與由12c組成的高純碳粉壓製成複合碳塊作為 二3剔;燒蝕法之雷射照射靶302，用同樣之方法製成另一個 由13C組成的靶3〇4 ; (2)提供碳奈米管收集裝置3〇8; — <3)將步驟（1)所製得的靶302、304及步驟（2)的碳奈 =:，集裝置308放入雷射燒蝕反應室310中，並使碳奈米 官收木裝置308置於靶3〇2、304之一側； (4) 並通過排氣通道316將雷射燒蝕反應室31〇抽真空 ^ ’再通過氣體輸入通道318通進壓強為5〇〜76〇T〇rr之氬 氣； (5) 用加熱器306將雷射燒蝕反應室310中靶302、304 所在之區域加熱到1 0 0 0〜1 2 0 0 °C ; ΗPage 10 200409728 V. Description of the invention (7) (6) Continue to respond to the expected daily pi connection age Λ η # _ ΠΓ step π + π 1 The anode consumed after the break is deposited on the cathode 208 to form an isotope-doped carbon Nano tube. It can be understood that in this method, carbon nanotubes doped with isotopes can be obtained in step (5) (i); and: or: nickel powder or other suitable catalyst and carbon powder can be mixed with: argon ' Hydrogen instead of helium is used to protect helium; =: ΐΓ will generate anodes containing different isotopes in a rotating manner "cold water pipes are installed in the reaction chamber to avoid electricity due to electricity # 帝 ί i: ί supply: the third kind of preparation is doped with isotope carbon Please refer to the fourth figure for the method of the nano tube, the method of "field and k money", and the specific steps are as follows: 卞 / ^ 1 ^ / Use ίcobalt powder (mass percentage concentration 2 · 8%) and nickel (mass percentage) Lu ° powder and high-purity carbon powder composed of 12c are pressed into a composite carbon block as two-three ticks; the laser irradiation target 302 of the ablation method is used to make another target 304 composed of 13C by the same method; ( 2) Provide a carbon nanotube collection device 30.8; < 3) Put the targets 302, 304 obtained in step (1) and carbon in step (2) = :, and collect device 308 into a laser burner In the erosion reaction chamber 310, a carbon nano-wood harvesting device 308 is placed on one side of the target 302, 304. (4) The laser ablation reaction chamber 31 is passed through the exhaust passage 316. Evacuate ^ 'and pass argon gas with a pressure of 50 ~ 76 ° Torr through the gas input channel 318; (5) Use the heater 306 to heat the areas where the targets 302 and 304 in the laser ablation reaction chamber 310 are located To 1 0 0 0 ~ 1 2 0 0 ° C; Η
200409728 五、發明說明（8)200409728 V. Description of Invention (8)
(6 )利用聚焦透鐘q 9脸SB ^ οο α 镜^2將置於靶3 0 2、304另一側的波長 為5 3 2 nm、单個雷射脈榭夕〜θ仏。 01 , π ^ 4狐衝之忐夏為2 5 0mJ之脈衝雷射光束 3 I 4聚焦於靶3 0 2上，日3射驻々士 1?ΓΛ , . a ^ , …、射”、古之直徑為5mm，反應生成的由 2C組成的石反奈米管片段（同土一 ^Qno L . 奴（圖未不）沈積於該碳奈米管收集裝 置J U 8上， (7 )照射預定時間徭， 々斤 土去q u取隹认。 1後 调即聚焦透鏡3 1 2之位置將雷射 先束31U於另-塊㈣4上 (片圖上示）繼續生長於步驟(以成的由％組/之破奈米管 片段上； (8 )繼續反應預定瞎n么 %間後，在與雷射光束3 1 4相對一端 放置的收集裝置308上沈乒亡协士 凡積有摻有同位素之碳奈米管。 可以理解，本方法由 f Μ Μ π 中 在步驟（7)後重複步驟（6)及 成乾作為雷射燒餘法催化劑與碳粉複合粉壓 射源喊交換兩個乾位用；也可以利用移動雷 夏之方式將雷射源照射到另一塊靶 上。 綜上所述’本發明忽：人3义口古 <，! φ ^ w μ t月付合發明專利要件，爰依法提出專 古九籴士安从蓺夕,k者僅為本發明之較佳實施例，舉凡 天、、心本木技表之人士，於拉 飾或變化，皆應包含於作之等效修(6) A focusing lens q 9 face SB ^ οο α lens ^ 2 will be placed on the other side of the target 3 0 2, 304 with a wavelength of 5 3 2 nm, a single laser pulse Xie ~ θ 仏. 01, π ^ 4 The summer of Fox Chong is a pulsed laser beam 3 I 4 of 2 0 5 mJ focused on the target 3 0 2, the 3 shots of the resident warrior 1? ΓΛ,. A ^, ..., shot ", ancient The diameter is 5mm, and the reaction generated 2C stone anti-nano tube segment (the same soil ^ Qno L. Slave (not shown in the figure)) is deposited on the carbon nano tube collection device JU 8, (7) irradiation is scheduled Time is up, I ’m going to pick it up. I adjust the position of the focusing lens 3 1 2 and place the laser beam 31U on the other block 4 (shown in the picture) and continue to grow in the step. % Group / on the broken nano tube segment; (8) continue to respond to the predetermined time n%, and then on the collection device 308 placed on the opposite end to the laser beam 3 1 4 It is understood that the carbon nano tube of the isotope. It can be understood that the method consists of repeating step (6) after step (7) in f Μ Μ π and drying it as a laser residual catalyst and a carbon powder composite powder injection source. It can also be used to move the laser source to another target by moving Leixia. To sum up, the present invention is abrupt: person 3 Yikougu <,! Φ ^ w μ Ming patent requirements, according to the law to propose a special ancient Nine Emperor Shi An from the evening, k is only a preferred embodiment of the present invention, for example, the person of the heart, the heart of the wooden skill watch, in the decoration or change, should include Equivalent repair
第12頁 200409728 圖式簡單說明 【圖示簡單說明】 第 一 圖 係 本 發 明 摻有同 位素 之 碳 奈 米 管 之 示 意 圖。 第 二 圖 係 利 用 本 發明第 一種 方 法 製 備 摻 有 同 位 .素端 .奈米 所 用 裝 置 不意圖 〇 第 -—· 圖 係 利 用 本 發明第 二種 方 法 製 備 摻 有 同 位 素石炭 .奈米 所 用 裝 置 示意圖 〇 第 四 圖 係 利 用 本 發明第 三種 方 法 製 備 摻 有 同 位 素碳 .奈米 所 用 裝 置 不意圖 〇 [ 主 要 元 件 符 號 說明】 氣 體 入 通 道 102 ^ 104 、 118 、 ^ 218 Λ 318 反 應 爐 106 反 應 室 110 閥 門 1 12 、1 14 排 氣 通 道 1 16 Λ 216 ^ 316 基 底 132 鐵 膜 134 碳棒 202 > 204 絕 緣 膠 203 陰 極 208 電 弧 放 電 反 應 室 210 電 開 關 212 正 極 214 負 極 t 215 靶 302 ^ 304 加 埶 器 306 碳 奈 米 管 收 集 裝 置 308 雷 射 燒 名虫 反 應 室 310 聚 焦 透 鏡 312 脈 衝 雷 射 光 束 314 碳 奈 米 管 40 碳 奈 米 管 片 段 40 2 > 404Page 12 200409728 Simple illustration of the diagram [Simplified illustration of the diagram] The first diagram is the schematic diagram of the carbon nanotube with the isotope doped in the present invention. The second diagram is a schematic diagram of a device used for preparing isotope-doped carbon by using the first method of the present invention. The diagram is a schematic diagram of the apparatus used to prepare isotope-doped carbon by using the second method of the present invention. 〇 The fourth diagram is the use of the third method of the present invention to prepare isotope-doped carbon. The device used for nanometers is not intended. [Key component symbol description] Gas inlet channel 102 ^ 104, 118, ^ 218 Λ 318 reaction furnace 106 reaction chamber 110 Valve 1 12 、 1 14 Exhaust channel 1 16 Λ 216 ^ 316 Base 132 Iron film 134 Carbon rod 202 > 204 Insulating glue 203 Cathode 208 Arc discharge reaction chamber 210 Electric switch 212 Positive 214 Negative t 215 Target 302 ^ 304 plus 埶306 Carbon nano tube collection device 308 Laser burning insect reaction chamber 310 Focusing lens 312 Pulsed laser beam 314 Carbon Nano Tube 40 Carbon Nano Tube Segment 40 2 > 404
第13頁Page 13
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