200408486 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於將雷射光束照射加工對象物以進行加工 之雷射加工方法及雷射加工裝置。 【先前技術】 圖9爲可形成溝槽之習知雷射加工裝置的槪略顯示圖 〇 例如自雷射光源5 1射出1 kHz頻率之脈衝雷射光束。 雷射光束即在均勻器52被均勻化射束剖面之脈衝能量密 度（頂端平坦）後，復由具有例如圓形貫通孔之遮罩53將 剖面形狀予以整形爲圓形。且在反射鏡5 4反射，經過聚 光鏡5 5而射入基板5 6。基板5 6則是例如在玻璃基底材 料上形成有IΤ Ο膜之基板。雷射光束即射入於基板5 6之 ITO膜。ITO膜表面之雷射光束的光束點爲如直徑〇.2mm 之圓形。基板56被裝載於XY載物台57上。而藉該XY 載物台5 7將基板5 6移動於二維平面內，乃能使脈衝雷射 光束之射入位置在基板56上表面內移動。 首先，移動XY載物台57促使基板56以50%重複率 被照射脈衝雷射光束，在基板56之ITO膜予以形成溝槽 。在此所謂重複率，係爲對於圓直徑每射擊一次脈衝雷射 光束時沿圓半徑方向移動之距離的比率之意。 圖10A爲以50%重複率被照射雷射光束而開鑿連續 性孔穴，在ITO膜形成溝槽之基板56槪略平面圖。以粗 (2) 200408486 線條顯示溝槽之開口。將依存於射入I τ Ο膜之雷 光束點形狀之孔穴予以連續性開鑿結果，而形成 此，沿溝槽較長方向之開口側緣具有圓形光束點 分所致的凹凸。又，所照射雷射光束之頻率爲 板5 6之I Τ Ο膜上的雷射光束之光束點爲直徑〇. 時，加工速度則呈1 〇 〇 m m / s。主要是，被X Υ ; 之動作速度予以速率控制，致考慮加工形狀之均 無法採取更加快速之加工速度。 爲使ITO膜所形成溝槽開口側緣接近於直線 用增高重複率之方法。例如移動XY載物台5 7 9 0 %重複率照射脈衝雷射光束，而在基板5 6之 形成溝槽。 圖1 0 B爲藉以9 0 %重複率所照射脈衝雷射光 連續性孔穴，在ITO膜形成溝槽之基板5 6槪略 與圖1 0 A同樣，將溝槽之開口以粗線條顯示。 長方向之開口側緣雖接近於直線狀。惟，由於以 率照射雷射光束，致加工速度爲50%重複率時之 2 0mm / s。亦即，雖能改善開口形狀卻會惡化加 效率。 圖1 1爲沿圖1 〇 A之PQ線切斷的基板5 6槪 。在玻璃基底材料上所形成ITO膜上形成有溝槽 面對於基板5 6表面呈傾斜。惟，溝槽具有更峭 形狀較佳。 本發明之目的，即在提供一種能以良好的時 射光束的 溝槽。因 外周一部 1 k Η z、基 2 m m圓形 戮物台5 7 勻性，而 狀，乃使 ，促使以 ITO膜上 束被開鑿 平面圖。 沿溝槽較 9 0 %重複 1 / 5、即 工之時間 略剖面圖 ，溝槽側 立之側面 間效率， -6- (3) (3)200408486 進行品質優異之加工的雷射加工方法及加工裝置。 【發明內容】 依&本發明之一觀點’係提供一種雷射加工方法.含 有：以具有貫通孔之遮罩整形射束剖面，俾使該遮罩的貫 通孔在加工對象物表面上成像地，由透鏡將通過該貫通孔 之雷射光束予以聚光並射入於該加工對象物表面上的工程 ;與錯雷射光束之射入位置在上述加工對象物表面上移動 ，令通過上述透鏡之雷射光束進行掃描同時，在雷射光束 掃描中亦使上述貫通孔在加工對象物表面上成像而加工該 加工對象物的工程。 由於使遮罩的貫通孔經常成像於加工對象物表面，而 掃描雷射光束，致能以高時間效率進行品質良好之加工。 且可防止雷射光束掃描起因之光暈所致的加工品質之降低 〇 又，依據本發明之其他觀點，乃提供一種雷射加工方 法，含有：將透鏡所聚光雷射光束予以射入於加工對象物 表面之工程；與使雷射光束射入位置移動於上述加工對象 物表面上而加工該加工對象物之工程，亦是避免該雷射光 束之自上述透鏡至上述加工對象物表面的光路徑長度發生 變化地實行該雷射光束掃描之工程。 由於將透鏡至加工對象物表面之加ΐ位置的光路徑長 度保持於一定，並予以雷射光束掃描，故能例如經常調焦 於加工對象物表面上’以局時間效率進彳了局品質之雷射加 200408486200408486 (1) 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a laser processing method and a laser processing apparatus for processing a laser beam by irradiating a processing object. [Prior Art] FIG. 9 is a schematic view of a conventional laser processing device capable of forming a groove. For example, a pulsed laser beam with a frequency of 1 kHz is emitted from a laser light source 51. After the laser beam is homogenized by the uniformity of the pulse energy density of the beam cross section (the tip is flat), the cross section is shaped into a circular shape by a mask 53 having a circular through hole, for example. Further, it is reflected by the reflecting mirror 54 and passes through the condenser lens 55 to be incident on the substrate 56. The substrate 56 is, for example, a substrate having an ITO film formed on a glass base material. The laser beam is incident on the ITO film of the substrate 56. The beam spot of the laser beam on the surface of the ITO film is a circle having a diameter of 0.2 mm. The substrate 56 is mounted on the XY stage 57. By using the XY stage 5 7 to move the substrate 5 6 in a two-dimensional plane, the incident position of the pulsed laser beam can be moved within the upper surface of the substrate 56. First, moving the XY stage 57 causes the substrate 56 to be irradiated with a pulsed laser beam at a repetition rate of 50%, and a groove is formed in the ITO film of the substrate 56. Here, the repetition rate is the ratio of the distance traveled in the radius direction of the circle when the pulse laser beam is fired for each circle diameter. Fig. 10A is a schematic plan view of a substrate 56 formed by digging a continuous hole by irradiating a laser beam at a repetition rate of 50% and forming a groove in the ITO film. The opening of the trench is shown with thick (2) 200408486 lines. Holes that depend on the shape of the light beam spot that is incident on the I τ Ο film are continuously excavated to form this. The edge of the opening along the longer direction of the groove has irregularities caused by circular beam spots. In addition, when the frequency of the irradiated laser beam is the diameter of the laser beam on the I Τ Ο film of the plate 56, the processing speed is 1000 m / s. The main reason is that the speed of X Υ; is used to control the speed, so that even considering the processing shape, faster processing speed cannot be adopted. In order to make the side edge of the trench opening formed by the ITO film close to a straight line, a method of increasing the repetition rate is used. For example, moving the XY stage 579% of the repetition rate to irradiate a pulsed laser beam, and a groove is formed in the substrate 56. Fig. 10B shows a continuous laser cavity irradiated with pulsed laser light at a 90% repetition rate. A substrate 5 6 formed with a groove in the ITO film is omitted. Similar to Fig. 10A, the opening of the groove is shown in thick lines. Although the opening side edge in the longitudinal direction is close to a straight line. However, since the laser beam is irradiated at a rate, the processing speed is 20 mm / s at a repetition rate of 50%. That is, although the shape of the opening can be improved, the efficiency is deteriorated. FIG. 11 is a substrate 56 切断 cut along the PQ line of FIG. 10A. A groove surface is formed on the ITO film formed on the glass base material, and the surface is inclined with respect to the surface of the substrate 56. However, it is better that the groove has a more steep shape. An object of the present invention is to provide a groove capable of emitting a light beam at a good time. Due to the uniformity and shape of the round 1kΗz, 2mm round object stage 5 7 on the outer part, the shape of the ITO film was prompted to be cut by the beam on the ITO film. Repeat 1/5 of the groove along 90% of the time, that is, a brief cross-sectional view of the time of work, the efficiency between the sides of the groove side, -6- (3) (3) 200408486 Laser processing method and excellent quality processing and Processing device. [Summary of the Invention] According to & one aspect of the present invention, a laser processing method is provided. The method includes: shaping a beam profile with a mask having a through hole, and imaging the through hole of the mask on a surface of a processing object. Ground, a process of condensing the laser beam passing through the through hole by the lens and projecting the laser beam onto the surface of the processing object; moving the incident position of the wrong laser beam on the surface of the processing object to pass the above The process of scanning the laser beam of the lens, and also processing the processed object by imaging the through hole on the surface of the processed object during the laser beam scanning. Since the through holes of the mask are often imaged on the surface of the processing object, and the laser beam is scanned, high-quality processing can be performed with high time efficiency. In addition, it can prevent the reduction of the processing quality caused by the halo caused by the scanning of the laser beam. According to another aspect of the present invention, a laser processing method is provided. The method includes the following steps. The process of the surface of the processing object; and the process of moving the laser beam incident position on the surface of the processing object to process the processing object, also avoiding the laser beam from the lens to the surface of the processing object The laser beam scanning process is performed while the optical path length is changed. Since the length of the optical path from the lens to the plus position of the surface of the processing object is kept constant and the laser beam is scanned, for example, it is often possible to focus on the surface of the processing object. Laser plus 200408486
工。 況且，依據本發明之其他觀點，係提供一種雷射加工 裝置，含有：可射出雷射光束之雷射光源；與保持加工對 象物之保持台；與具有可整形上述雷射光源所射出雷射光 束剖面之貫通孔的遮罩；與將被上述遮罩整形剖面之雷射 光束加以聚光藉該遮罩之貫通孔成像於上述保持台所保持 的加工對象物表面之聚光鏡；與接受外部之控制，促使上 述聚光鏡所聚光之雷射光束在上述加工對象物表面上至少 沿一維方向進行掃描之射束掃描器；與接受外部之控制， 促使上述遮罩及上述聚光鏡移動之移動機構；與促使上述 射束掃描器之掃描及上述移動機構所致的上述遮罩和上述 聚光鏡之移動同步進行的控制裝置。 使用此種雷射加工裝置時，藉同步於射束掃描促使遮 罩及聚光鏡變位，而能以高時間效率進行高品質之雷射加 工。 依據本發明之其他觀點，乃提供一種雷射加工方法， 含有：（e)將雷射光束以透鏡予以聚光，射入於加工對象 物表面之工程；與（f)當上述加工對象物之雷射光束射入 位置移動時，促使上述透鏡移動以抑制射入位置移動所起 因的上述加工對象物表面之雷射光束的脈衝能量密度或功 率密度之變動同時，將雷射光束射入位置在上述加工對象 物表面內予以移動之工程。 由於促使透鏡移動以均勻化照射於被加工面之雷射光 束的脈衝能量密度或功率密度，因此對於被加工面之廣泛 -8- (5) 200408486 p頁域㉟卞以保持所定的加工性。 依據本發明之其他觀點，係提供一種雷射加 含有：將雷射光束以透鏡予以聚光，射入於加工 面之工程；與當上述加工對象物之雷射光束射入 時’促使上述透鏡移動以抑制射入位置移動所起 加工對象物表面之光束點面積的變動同時，將雷 入位置在上述加工對象物表面內予以移動之工程 藉促使透鏡移動以均勻化照射於被加工面之 的光束點面積，故能謀圖基板上之脈衝能量密度 度的均勻化，而對被加工面之廣泛領域能予以保 加工性。 依據本發明之其他觀點，乃提供一種雷射加 含有：可射出雷射光束之雷射光源；與保持加工 保持機構；與可將上述雷射光源所射出雷射光束 之透鏡；與可使上述透鏡所射出雷射光束之進行 ，令雷射光束射入於上述保持機構所保持的加工 面，而使雷射光束之射入位置在加工對象物表面 射束掃描器；與接受外部之控制信號，促使上述 之移動機構；與當上述射束掃描器促使雷射光束 置在加工對象物表面移動時，可控制上述移動機 述透鏡位置移動，以抑制加工對象物表面之雷射 衝能量密度或功率密度變化之控制裝置。 藉促使透鏡移動以均勻化照射於被加工面之 的脈衝能量密度或功率密度，而對被加工面之廣 工方法， 對象物表 位置移動 因的上述 射光束射 c 雷射光束 或功率密 持所定的 工裝置， 對象物之 予以聚光 方向搖擺 對象物表 內移動的 透鏡移動 之射入位 構俾使上 光束的脈 雷射光束 泛領域能 -9- (6) 200408486 予以保持所定的加工性。 依據本發明之其他觀點，係提供一種雷射加工 含有：可射出雷射光束之雷射光源；與保持加工對 保持機構；與可將上述雷射光源所射出雷射光束予 之透鏡；與可使上述透鏡所射出雷射光束之進行方 ，令雷射光束射入於上述保持機構所保持的加工對 面，而使雷射光束之射入位置在加工對象物表面內 射束掃描器；與接受外部之控制信號，促使上述透 之移動機構；與當上述射束掃描器促使雷射光束之 置在加工對象物表面移動時，可控制上述移動機構 述透鏡位置移動，以抑制加工對象物表面之光束點 動的控制裝置。 藉促使透鏡移動以均勻化照射於被加工面之雷 的光束點面積，致能謀圖基板上之脈衝能量密度或 度的均勻化，而對被加工面之廣泛領域能予以保持 加工性。 依據本發明之其他觀點，乃提供一種雷射加工 含有：（g)將雷射光束以透鏡予以聚光，射入於加 物表面之工程；與（h)當上述加工對象物之雷射光 位置移動時，利用可變減衰器調節雷射光束之功率 制射入位置移動所起因的上述加工對象物表面之雷 的脈衝能量密度或功率密度之變動同時，將雷射光 位置在上述加工對象物表面內予以移動之工程。 藉利用可變減衰器以均勻化照射於被加工面之 裝置， 象物之 以聚光 向搖擺 象物表 移動的 鏡移動 射入位 俾使上 面積變 射光束 功率密 所定的 方法， 工對象 束射入 ，以抑 射光束 束射入 雷射光 -10- (7) 200408486 束的脈衝能量密度或功率密度，而對被加工面之 能予以保持所定的加工性。 依據本發明之其他觀點，係提供一種雷射加 含有：可射出雷射光束之雷射光源：與保持加工 保持機構·，與可將上述雷射光源所射出雷射光束 之透鏡；與可使上述透鏡所射出雷射光束之進行 ，令雷射光束射入於上述保持機構所保持的加工 面，且使雷射光束之射入位置在加工對象物表面 射束掃描器；與接受外部之控制信號，以可變之 減雷射光束的功率之可變減衰器；與當上述可變 使雷射光束之射入位置在加工對象物表面移動時 上述可變減衰器調節雷射光束的功率，以抑制加 表面之雷射光束的脈衝能量密度或功率密度變化 置。 藉利用可變減衰器將照射於被加工面之雷射 衝能量密度或功率密度予以均勻化，而能將被加 泛領域保持具有所定的加工性。 依據本發明之其他觀點，乃提供一種雷射加 含有：可射出雷射光束之雷射光源；與保持加工 保持機構；與可將上述雷射光源所射出雷射光束 或擴散之第一透鏡；與可使通過上述第一透鏡之 射入，將所射入雷射光束予以聚光的第二透鏡； 述第二透鏡所射出雷射光束之進行方向搖擺’令 射入於上述保持機構所保持的加工對象物表面’ 廣泛領域 工裝置， 對象物之 予以聚光 方向搖擺 對象物表 內移動的 減衰率衰 減衰器促 ，可控制 工對象物 之控制裝 光束的脈 工面之廣 工裝置， 對象物之 予以收歛 雷射光束 與可使上 雷射光束 且使雷射 -11 - (8) (8)200408486 光束之射入位置在加工對象物表面內移動的射束掃描器； 與接受外部之控制信號，促使上述第一透鏡移動之移動機 構；與當上述射束掃描器促使雷射光束之射入位置在加工 對象物表面移動時，可控制上述移動機構俾使上述第一透 鏡位置移動，以抑制加工對象物表面之雷射光束的脈衝能 量密度或功率密度變化之控制裝置；而將對於射入上述第 二透鏡之雷射光束的該第二透鏡之數値口徑設爲N A 1、將 對於通過上述第二透鏡之雷射光束的該第二透鏡之數値口 徑設爲NA2時，ΝΑΙ / NA2是2以上者。 藉移動第一透鏡將照射於被加工面之雷射光束的脈衝 能量密度或功率密度予以均勻化，而對被加工面之廣泛領 域能予以保持所定的加工性。且，藉縮短第一透鏡之移動 距離’可圖加工之局速化及局精度化。 依據本發明之其他觀點，係提供一種雷射加工裝置， 含有：可射出雷射光束之雷射光源；與保持加工對象物之 保持機構；與具有上述雷射光源所射出雷射光束射入之貫 通孔，且接受外部之控制信號，可改變通過貫通孔之雷射 光束的剖面一方向長度之射束剖面整形器；與可將上述射 束剖面整形器所射出雷射光束予以聚光之透鏡；與可使上 述透鏡所射出雷射光束之進行方向搖擺，令雷射光束射入 於上述保持機構所保持的加工對象物表面，且使雷射光束 之射入位置在加工對象物表面內移動的射束掃描器；與當 上述射束掃描器促使雷射光束之射入位置在加工對象物表 面移動時，可控制上述射束剖面整形器，由該射束剖面整 -12- 200408486 Ο) 形器進行抑制加工對象物表面之光束點形狀變動的控 置。 由於當被加工位置移動時，將光束點形狀之變動 抑制’故對被加工面之廣泛領域能予以保持所定的加 c 依據本發明之其他觀點，乃提供一種雷射加工裝 含有：可射出雷射光束之雷射光源；與保持加工對象 保持機構；與可將上述雷射光源所射出雷射光束予以 之透鏡；與可使上述透鏡所射出雷射光束之進行方向 ，令雷射光束射入於上述保持機構所保持的加工對象 面’且使雷射光束之射入位置在加工對象物表面內移 射束掃描器；與具有貫通孔，被配置於自上述射束掃 所射出雷射光束射入於加工對象物爲止之光路徑中途 使通過該貫通孔之雷射光束射入於加工對象物的近接 〇 藉使用可搖擺雷射光束之進行方向的射束掃描器 進行利用近接遮罩之雷射加工，而能高速地實行高精 加工。 依據本發明之其他觀點，係提供一種雷射加工方 含有：調整雷射光源所射出雷射光束之擴散角的工程 平行於加工對象物表面被配置於自該表面僅離間所定 之位置，且將被調整爲具上述所定擴散角之雷射光束 行方向予以搖擺同時，將該雷射光束照射於具有貫通 近接遮罩，令通過該貫通孔之雷射光束射入於該加工 制裝 予以 工性 置， 物之 聚光 搖擺 物表 動的 描器 ，而 遮罩 ，以 度之 法， ;與 距離 的進 孔之 對象 -13- (10) 200408486 物表面，而將該貫通孔之形 工程；與將上述所定擴散角 依據該貫通孔之形狀被轉印 及雷射光束之擴散角、以及 對象物表面間之距離所預先 藉使用可搖擺雷射光束 進行利用近接遮罩之雷射加 加工。且，依據預先求取之 擴散角以及近接間隙不可的 行加工時，能簡便地選定近 依據本發明之其他觀點 含有：可射出連續波雷射光 象物之保持機構；與被射入 ，且依據外部所付予契機信 爲予以射出或不予射出某進 形貫通孔，使自上述光學系 束射入於該貫通孔，以整形 述遮罩射出之雷射光束予以 孔在上述保持機構所保持加 依據外部所付予控制信號將 上述透鏡所射出雷射光束之 工對象物表面內移動之移動 信號，令上述遮罩旋轉於和 束光軸呈平行之軸周圍的遮 狀轉印於該加工對象物表面的 及上述所定距離之至少一方’ 於該加工對象物表面的精度、 關於上述近接遮罩和上述加11二 求取的關係加以設定之工程ς 之進行方向的射束掃描器’ U 工，而能高速地實行高精度之 非滿足轉印精度及雷射光束之 數値關係，以所盼轉印精度進 接間隙及擴散角。 ，乃提供一種雷射加工裝置’ 束之雷射光源；與保持加工對 上述雷射光源所射出雷射光束 號，可將所射入雷射光束切換 行方向之光學系統；與具有矩 統以某進行方向射出之雷射光 雷射光束剖面之遮罩；與將上 聚光，使上述遮罩之矩形貫通 工對象物表面成像的透鏡；與 上述保持機構予以移動，可使 射入於加工對象物的位置在加 機構；與依據外部所付予控制 通過該遮罩之貫通孔的雷射光 罩旋轉機構；與控制上述光學 -14- (11) 200408486 系統’促使上述光學系統以所定時序將雷射光束射出 進行方向，及控制上述移動機構，促使上述移動機構 射光束之對加工對象物的射入位置移動於第一方向， 控制上述遮罩旋轉機構，促使上述遮罩旋轉機構在上 動機構將加工對象物表面上之雷射光束射入位置移動 第一方向前’令上述遮罩旋轉俾使上述矩形貫通孔之 工對象物表面的像某一邊平行於該第一方向之控制裝丨 在加工對象物表面’能照射連續波雷射光束以形 狀圖形（線）同時，亦能自連續波雷射光束切出脈衝雷 束予以照射’而容易地形成點狀之離散性圖形（點）。 促使雷射光束照射位置在加工對象物表面沿雷射光束 形光束點的某邊平行移動，而能將線、點之外形均形 矩形。 依據本發明之其他觀點，係提供一種雷射加工方 含有：（0將雷射光源所射出連續波雷射光束射入於 所射入雷射光束切換爲自某進行方向予以射出或不予 之光學系統的工程；與（j )將自上述光學系統向某進 向射出之雷射光束射入於具矩形貫通孔的遮罩加以整 並以透鏡聚光，而使上述貫通孔之像在加工對象物表 像的工程；與（k)令上述貫通孔之像在上述加工對象 面上沿該像某一邊之平行方向移動的工程；而欲在加 象物表面形成點狀之離散性圖形時，即在上述工程（i) 上述光學系統向某進行方向間歇性地射出雷射光束， 加工對象物表面形成線狀圖形時，即在上述工程（i)， 於某 將雷 以及 述移 於該 在加 置。 成線 射光 且藉 之矩 成爲 法， 可將 射出 行方 形， 面成 物表 工對 ，自 欲在 自上 -15- (12) (12)200408486 述光學系統向某進行方向連續性地射出雷射光束。 在加工對象物表面，能照射連續波雷射光束以形成線 狀圖形（線）同時，亦能自連續波雷射光束切出脈衝雷射光 束予以照射，而容易地形成點狀之離散性圖形（點）。且藉 促使雷射光束照射位置在加工對象物表面沿雷射光束之矩 形光束點的某邊平行移動，而能將線、點之外形均形成爲 矩形。 依據本發明之其他觀點，乃提供一種雷射加工裝置， 含有：可保持加工對象物之保持機構；與可射出脈衝雷射 光束之第一雷射光源；與可射出連續波雷射光束之第二雷 射光源；與將上述第一雷射光源射出之脈衝雷射光束及上 述第二雷射光源射出之連續波雷射光束，以連續波雷射光 束之光束點內部包含脈衝雷射光束之光束點地予以照射於 上述保持機構所保持加工對象物表面的光學系統；與促使 脈衝雷射光束及連續波雷射光束之光束點在上述保持機構 所保持加工對象物表面上移動的移動機構。 對加工對象物表面上之某被加工領域，先照射連續波 雷射光束付予預熱後，再進行照射脈衝雷射光束之加工。 於是，能容易地選擇性加工該被加工領域之表層。 依據本發明之其他觀點，係提供一種雷射加工方法， 含有··（η)自第一雷射光源射出脈衝雷射光束，及自第二 雷射光源射出連續波雷射光束之工程；與（〇)對基底層及 基底層表面上所形成具有以比基底層材質更不易照射雷射 加工之材質予以形成的表層之加工對象物表面所劃定被加 -16- (13) 200408486 工點，經照射自上述第二雷射光源射出 付予預熱後，再對該被加工點照射自上 出之脈衝雷射光束’而在上述加工d象 工程。 藉對於加工對象物表面上之某被加 續波雷射光束付予預熱後，再進行照射 工。於是，能容易地選擇性加工該被加 【實施方式】 圖1爲可實行本發明第一實施例之 射加工裝置槪略圖。 自雷射光源1、例如含有波長變接 雷射振盪器，以脈衝能量lmJ / pulse、 出Nd : YAG雷射之三倍高次諧波（波ί 束乃經過調節脈衝能量之可調式衰減器 徑且以平行光射出之擴張器3，射入於 圓錐光學系統4含有一對圓錐（形）透鏡 對圓錐（形）透鏡4 a，4 b則例如以相同型 呈對向。雷射光束即以射束剖面中心重 頂點，自直立圓錐之軸向射入於圓錐透 鏡4b射出。圓錐光學系統4係將所射 輪廓變換爲在射束剖面中央部強度較弱 對此容後詳述。又，圓錐光學系統4亦 出側之圓錐透鏡4b，而使用凸透鏡。 之連續波雷射光束 述第一雷射光源射 物表層形成孔穴之 工領域，先照射連 脈衝雷射光束之加 工領域之表層。 雷射加工方法的雷 [單元之Nd : YAG 脈衝寬度50ns射 I 355nm)。雷射光 2、可擴大射束直 圓錐光學系統4。 4 a , 4 b所構成。一 ，被配置互相底面 疊於直立圓錐部分 鏡4a而自圓錐透 入雷射光束之射束 ’在周邊部較強。 可替代雷射光束射 -17- (14) (14)200408486 自圓錐光學系統4射出之雷射光束乃通過具有例如矩 形貫通孔之遮罩5、可使遮罩5之矩形貫通孔成像於基板 1 2上之物鏡6。遮罩5及物鏡6則分別藉音圈機構9及 1 〇 (亦能置換爲壓電驅動等之驅動機構）可移動於與雷射光 束進行方向呈平行之方向。音圈機構9及I 0所致之移動 係藉控制器1 1所發送之信號而進行。又，基板1 2是被安 置於保持台8上。 由物鏡6聚光之雷射光束即射入於電磁掃描器7。電 磁掃描器7乃含有X方向用掃描器7a及Y方向用ί市描益 7b所構成，能以高速將雷射光束掃描於二維方向。X方 向用掃描器7a、Y方向用掃描器7b均含有可搖動反射鏡 被予以構成。當在保持台8所保持基板1 2上劃定互相正 交之X方向及Y方向時，X方向用掃描器7a、Y方向用 掃描器7b則促使雷射光束進行掃描，令經物鏡6聚光之 雷射光束射入點在基板1 2表面上分別沿X方向、Y方向 移動。電磁掃描器7可組合X方向用掃描器7a、Y方向用 掃描器7b，使雷射光束掃描於二維方向。 加工對象物之基板1 2係爲例如在玻璃基底材料上形 成ITO膜之基板，雷射光束即以加工能量約1 J / cm2射 入於基板12之ITO膜。 圖2爲經遮罩5、物鏡6、電磁掃描器7而掃描基板 1 2上之雷射光束光路徑槪略顯示圖。 當雷射光束射入於基板1 2上之射入位置Μ時，Μ乃 成像有遮罩5之貫通孔。又，自遮罩5至物鏡6之光路徑 -18- (15) (15)200408486 長度設爲a、自物鏡6至基板1 2上之射入位置的光路徑長 度設爲b、將物鏡6之焦距設爲f時，欲使遮罩之貫通孔 成像於基板1 2上，就非滿足關係式 (1 / a)+ (1 / b)- 1 / f . · *(1) 不可。 由於電磁掃描器7之動作，雷射光束之射入位置則自 基板1 2上之射入位置Μ變爲N。於是對於射入位置Μ之 射入角與對於射入位置Ν之射入角互爲相異’假如遮罩5 及物鏡6原樣固定時，物鏡6至射入位置Μ之光路徑長 度與物鏡6至射入位置Ν之光路徑長度互爲相異（將該等 之差設爲△ b)，是故遮罩5之貫通孔不成像於Ν。 在圖1所示雷射加工裝置，控制器1 1係同步於電磁 掃描器7之動作，將促使遮罩5、物鏡6移動之信號分別 發送至音圈機構9,1 0。該信號是將例如自遮罩5至物鏡6 之光路徑長度a、自物鏡6至基板1 2上之射入位置的光路 徑長度b均保持爲一定，而促使遮罩5及物鏡6移動之信 號。音圈機構9,1 0乃接受控制器11之信號，分別使遮罩 5及物鏡6移動於與雷射光束進行方向呈平行之方向。 如圖2所示，射入位置自μ變化爲N時，遮罩5及 物鏡6被音圈機構9及1 0予以移動之距離爲△ b。遮罩5 及物鏡6即沿相同方向僅變位相同距離△ b。藉此，可滿 足上述（1)式，而在射入位置N成像遮罩5之貫通孔。 -19- (16) (16)200408486 因此，不僅射入位置Μ與N之兩點，只要在雷射光 束掃描中，經常將例如自遮罩5至物鏡ό之光路徑長度a 與自物鏡6至基板1 2上之射入位置的光路徑長度b保主寸 爲一定，就能經常在基板1 2表面上成像遮罩5 /<£賃通扎 。遮罩5及物鏡6則同步於電磁掃描器7所致之雷射光束 掃描，將光路徑長度a與光路徑長度b經常保持於一定地 被予以移動。此時，遮罩5之貫通孔的成像倍率（縮小率） 即經常呈一定。 例如，物鏡6之焦距f爲8 3 3 mm，將遮罩5至物鏡6 之光路徑長度a保持於5 0 0 0 m m的所定値、將物鏡6至基 板12上之射入位置的光路徑長度b保持於〇nim之所 定値時，遮罩5之貫通孔的成像倍率（縮小率）即爲1 / 5。 圖3A爲可在表面上成像遮罩5之矩形狀貫通孔地被 照射一射擊脈衝雷射光束，而在成像位置形成孔穴之基板 1 2槪略平面圖。基板1 2上係形成有被成像貫通孔之矩形 狀光束點，且在其位置之ITO膜開鑿孔穴。 圖3 B爲使遮罩5之矩形狀貫通孔以所定之成像倍率 成像同時，將射束之射入位置予以移動，藉照射四射擊脈 衝雷射光束，而在照射位置形成溝槽之基板1 2平面圖。 由於電磁掃描器7，俾使脈衝雷射光束沿成像爲矩形狀之 光束點長邊方向進行掃描。又，以5 0 %之重複率照射射束 ，促使各射擊所開鑿孔穴連續，而形成溝槽。 藉形成所定大小之矩形狀光束點，促使雷射光束沿與 一對平行側邊（在圖3B爲長邊）呈平行之方向進行掃描， •20- (17) (17)200408486 乃能形成所定寬度之溝槽。如本實施例，利用脈衝雷射光 束時，即使光束點之一對平行側邊（在圖3 B爲長邊）一部 分重疊於上次射擊之光束點的一對平行側邊一部分，而令 雷射光束進行掃描。由於溝槽之開口側緣係以矩形狀光束 點之直線部予以形成，是故呈無凹凸之直線狀。 從控制上之容易性的觀點等說之，將基板1 2上之光 束點形成爲光束點之一對平行側邊與X方向或Y方向呈 平行較宜。 又，欲成像於基板1 2上之遮罩5的貫通孔，並非矩 形亦可。將光束點形成爲具有一對平行側邊之形狀，且使 雷射光束沿與該一對平行側邊呈平行之方向進行掃描，就 能加工開口側緣無凹凸之所定寬度的溝槽。 圖4A爲遮罩5之貫通孔的一例示圖。遮罩5之貫通 孔被形成爲具有一對平行側邊之形狀。將該一對側邊互相 連接之其他一對側邊則向內側彎曲。使用具有如此貫通孔 之遮罩，而整形雷射光束剖面時，即能在基板1 2上形成 具有一對平行側邊形狀之光束點。 圖4 B爲圖4 A所示貫通孔成像於基板1 2上時，在基 板1 2上開鑿之孔穴槪略顯示圖。藉沿平行於一對平行側 邊之方向連續形成與該孔穴同樣形狀的孔穴，乃能加工開 口側緣無凹凸之所定寬度的溝槽。且，由於射入溝槽側緣 近旁之雷射光束累積能量密度比射入溝槽中央之雷射光束 累積能量密度較大，因此能促使溝槽側面更接近於垂直。 又，欲雷射加工如圖3 B所示僅延伸單一方向之溝槽 -21 - (18) (18)200408486 時，亦可使用具有一搖動反射鏡之一維電磁掃描器或多角 掃描器。此時，只要使掃描器之掃描方向一致於光束點之 一對平行側邊的方向就可。 茲參照圖5 A〜5 C，就圓錐光學系統4加以說明。如 上述，圓錐光學系統4能將所射入雷射光束之射束輪_變 換爲在射束剖面中央部較弱在周邊部較強。 圖5 A爲顯示雷射光源1所射出脈衝雷射光束剖面之 每一脈衝能量密度的槪略曲線圖。一般，脈衝雷射光束是 脈衝能量密度在剖面中央部分較局，愈向周邊脈衝能量密 度愈低。圓錐光學系統4則藉兩個圓錐透鏡4a，4b將所射 入雷射光束之中央部與周邊部予以反轉再射出之。因此， 自圓錐光學系統4射出之雷射光束的射束輪廓具有在射束 剖面中央部較弱在周邊部較強之分佈。 圖5 B爲自圓錐光學系統4射出經過遮罩5整形後的 脈衝雷射光束剖面之每一脈衝能量密度的槪略顯示曲線圖 。射束具有在中央部較弱在周邊部較強之脈衝能量密度分 佈。 圖5 C爲沿圖3 B之C 5 — C 5線切割之基板1 2槪略剖 面圖。具有圖5B所示射束輪廓之雷射光束，藉在物鏡6 予以聚光並射入於基板1 2，而在基板1 2之ITO膜能使側 面之傾斜角接近於9 0 ° 。因此，圖3 B所示溝槽是開口側 緣被形成爲直線狀加上具有峭立側壁之溝槽。 又，與電磁掃描器7之動作同步，亦可將脈衝雷射光 束之脈衝能量予以調節，以進行品質更優良之加工。射入 -22- (19) 200408486 於基板1 2之雷射光束的射入角變大時，射A 點面積即變大。因此，將電磁掃描器7所掃描 的脈衝能量固定於所定値時，隨著射入角變大 之雷射光束的脈衝能量密度愈變小，加工性會 於是，爲保持所定之加工性，有時需要將射入 光束的脈衝能量密度保持於一定。 可調式哀減器2同步於電磁掃描器7之動 雷射光源1所射出雷射光束之脈衝能量變化。 1 1發送之同步信號，以較大射入角將雷射光 板1 2時，即減小衰減率而增高自可調式衰減 射束脈衝能量。且藉此，在射束掃描中亦能將 入位置之脈衝能量密度保持於一定。 又，雖不保持一定，雷射光束對於基板1 如變動時，亦可藉將可調式衰減器2所致脈衝 率予以變動，俾使射入位置之脈衝能量密度變 提升加工品質。 又，將雷射光束射入基板1 2進行掃描時 於電磁掃描器7之動作，促使遮罩5之貫通孔 (縮小率）變化同時，將雷射光束射入位置之脈 保持於一定。可滿足下示兩式地， Δ 2 ^ f ^ xA】/(b— f— Δ】）/。— f) .work. Moreover, according to another aspect of the present invention, a laser processing device is provided, comprising: a laser light source capable of emitting a laser beam; and a holding table for holding a processing object; and a laser emitted from the laser light source capable of shaping the laser light source. A mask for a through-hole of a beam profile; a condenser for condensing a laser beam that has been shaped by the above-mentioned mask through the mask's through-hole to image the surface of a processing object held by the holding table; and receiving external control A beam scanner that causes the laser beam condensed by the condenser lens to scan at least one-dimensionally on the surface of the processing object; and a movement mechanism that accepts external control to cause the mask and the condenser lens to move; and A control device for causing the scanning of the beam scanner and the movement of the mask and the condenser caused by the moving mechanism to be performed in synchronization. When such a laser processing device is used, the mask and the condenser are displaced in synchronization with the beam scanning, so that high-quality laser processing can be performed with high time efficiency. According to another aspect of the present invention, a laser processing method is provided, including: (e) a process of condensing a laser beam with a lens and incident on a surface of a processing object; and (f) when the processing object is When the laser beam incident position is moved, the lens is moved to suppress the pulse energy density or power density of the laser beam on the surface of the processing object caused by the movement of the incident position, and the laser beam incident position is at The process of moving the surface of the object. Since the lens is moved to uniformize the pulse energy density or power density of the laser beam irradiated on the surface to be processed, the wide range of the surface to be processed is -8- (5) 200408486 p-domain to maintain the predetermined processability. According to another aspect of the present invention, there is provided a laser plus method comprising: a process of condensing a laser beam with a lens and incident on a processing surface; and urging the lens when the laser beam of the processing object is incident Movement to suppress the change of the beam spot area on the surface of the processing object caused by the movement of the incident position, and at the same time, the process of moving the lightning position within the surface of the processing object by moving the lens to uniformly irradiate the processed surface The beam spot area can be used to make the pulse energy density uniform on the substrate, and the processability can be guaranteed for a wide range of processed surfaces. According to another aspect of the present invention, there is provided a laser light source comprising: a laser light source capable of emitting a laser beam; and a holding and holding mechanism; and a lens capable of emitting the laser beam emitted by the laser light source; The laser beam emitted by the lens is performed, so that the laser beam is incident on the processing surface held by the holding mechanism, so that the laser beam is incident on the surface of the object to be processed. The beam scanner; and receives an external control signal , When the above-mentioned beam scanner causes the laser beam to move on the surface of the processing object, the lens position of the moving machine can be controlled to suppress the laser energy density or the surface of the processing object. Control device for power density change. By urging the lens to uniformize the pulse energy density or power density of the surface to be processed, in the wide working method of the surface to be processed, the above-mentioned beam is moved by the laser beam or power. The predetermined working device, the object is focused in the direction of focus, and the lens moves in the target position to move the lens into the position structure, so that the pulsed laser beam of the upper beam can be used in the field. -9- (6) 200408486 The predetermined processing is maintained. Sex. According to another aspect of the present invention, there is provided a laser processing including: a laser light source capable of emitting a laser beam; and a holding processing pair holding mechanism; and a lens capable of giving the laser beam emitted by the laser light source described above; and The laser beam emitted from the lens is processed, and the laser beam is incident on the opposite side of the processing held by the holding mechanism, so that the incident position of the laser beam is within the surface of the object to be processed; The control signal promotes the above-mentioned transparent movement mechanism; and when the beam scanner causes the laser beam to move on the surface of the processing object, the movement of the lens position of the above-mentioned movement mechanism can be controlled to suppress the light beam on the surface of the processing object Jog control. By urging the lens to move to uniformize the area of the beam spot of the light irradiated on the surface to be processed, it is possible to uniformize the pulse energy density or degree on the substrate, and maintain the processability in a wide area of the surface to be processed. According to another aspect of the present invention, there is provided a laser processing including: (g) a process of condensing a laser beam with a lens and incident on a surface of an additive; and (h) when the laser light position of the processing object is During the movement, the variable attenuation attenuator is used to adjust the power of the laser beam to adjust the incident position of the laser on the surface of the processing object caused by the movement of the pulse energy density or power density of the laser. Works to be moved within. By using a variable attenuator to uniformly irradiate the surface to be machined, the image of the object is moved to the swinging object surface by condensing the mirror, and the upper area is changed to determine the beam power density. The beam is incident to suppress the beam from entering the laser light. -10- (7) 200408486 The pulse energy density or power density of the beam, while maintaining the predetermined workability for the energy of the machined surface. According to another aspect of the present invention, there is provided a laser light source comprising: a laser light source capable of emitting a laser beam: and a holding processing and holding mechanism; and a lens capable of emitting the laser beam emitted by the laser light source; and The laser beam emitted by the lens is performed so that the laser beam is incident on the processing surface held by the holding mechanism, and the incident position of the laser beam is on the surface of the processing object; the beam scanner; and external control is received. Signal, a variable attenuator that reduces the power of the laser beam; and the variable attenuator adjusts the power of the laser beam when the variable causes the incident position of the laser beam to move on the surface of the processing object, It is set to suppress the pulse energy density or power density of the laser beam that is added to the surface. By using a variable attenuator to uniformize the laser energy density or power density irradiated on the surface to be processed, it is possible to maintain a predetermined processability in the area to be added. According to another aspect of the present invention, there is provided a laser plus: a laser light source capable of emitting a laser beam; and a holding and holding mechanism; and a first lens capable of emitting or diffusing the laser beam emitted by the laser light source; And a second lens capable of condensing the incident laser beam by passing through the first lens; directional swing of the laser beam emitted by the second lens to cause the incident to be held by the holding mechanism; The surface of the object to be processed is a wide range of industrial devices. The wide range of industrial devices is to reduce the attenuation rate of the moving object within the moving direction of the object. Convergence of the laser beam and the beam scanner that allows the upper laser beam and moves the laser -11-(8) (8) 200408486 beam incident position within the surface of the processing object; and accepts external A control signal to move the first lens to move the mechanism; and when the beam scanner causes the incident position of the laser beam to move on the surface of the processing object, it can be controlled The moving mechanism is a control device for moving the position of the first lens to suppress a change in pulse energy density or power density of the laser beam on the surface of the object to be processed; When the number of apertures of the two lenses is set to NA 1, and the number of apertures of the second lens for the laser beam passing through the second lens is set to NA2, NAI / NA2 is 2 or more. By moving the first lens, the pulse energy density or power density of the laser beam irradiated on the surface to be processed is uniformized, and a predetermined processability can be maintained in a wide range of the surface to be processed. Furthermore, by shortening the moving distance of the first lens', it is possible to speed up the processing and reduce the accuracy of the processing. According to another aspect of the present invention, there is provided a laser processing device including: a laser light source capable of emitting a laser beam; and a holding mechanism for holding an object to be processed; and a laser beam having the laser light source emitted from the laser source A beam profiler that can change the length of one direction of the cross section of the laser beam passing through the through-hole and receives an external control signal; and a lens that can focus the laser beam emitted by the beam profiler ; And the direction of the laser beam emitted by the lens can be swung, so that the laser beam is incident on the surface of the processing object held by the holding mechanism, and the incident position of the laser beam is moved within the surface of the processing object The beam profiler can control the beam profile shaper when the incident position of the laser beam is moved on the surface of the processing object by the beam scanner, and the beam profile can be adjusted by this beam profile-12-200408486 Ο) The shaper controls the shape change of the beam spot on the surface of the object to be processed. Since the variation of the beam spot shape is suppressed when the processed position is moved, a predetermined range can be maintained for a wide range of the processed surface. According to another aspect of the present invention, a laser processing device is provided which includes: A laser light source for the light beam; and a holding mechanism for holding the processing object; and a lens that can give the laser light beam emitted by the above-mentioned laser light source; and a direction that allows the laser beam emitted by the above-mentioned lens to proceed so that the laser beam enters A beam scanner on the surface of the processing object held by the holding mechanism, and the position where the laser beam is incident on the surface of the processing object; and a through-hole, which is disposed in the laser beam emitted from the beam scan The laser beam passing through the through-hole is made to approach the object in the middle of the light path incident on the object to be processed. By using a beam scanner that can swing the direction of the laser beam, the proximity mask is used. Laser processing enables high-precision processing at high speed. According to another aspect of the present invention, there is provided a laser processing method including: adjusting a diffusion angle of a laser beam emitted by a laser light source in parallel with a surface of a processing object at a position only spaced apart from the surface, and The laser beam is adjusted to swing with the predetermined diffusion angle, and the laser beam is irradiated with a through-proximity mask, so that the laser beam passing through the through-hole is incident on the processing equipment for workability. Set, the focus of the object swings the tracing device, and the mask, in degrees ,; the distance from the object of the hole -13- (10) 200408486, and the shape of the through hole project; According to the shape of the through hole, the diffusion angle is transferred and the diffusion angle of the laser beam and the distance between the surface of the object are borrowed in advance to perform laser processing using a proximity mask using a swingable laser beam. In addition, when processing is performed based on the diffusion angle obtained in advance and the proximity gap cannot be processed, other viewpoints according to the present invention can be easily selected including: a holding mechanism capable of emitting a continuous wave laser light image; and The opportunity provided by the outside is to enter or not eject a certain penetrating through hole, so that the optical beam is incident on the penetrating hole, and the laser beam emitted from the mask is shaped to hold the hole in the holding mechanism. Add a movement signal that moves the inside of the work object surface of the laser beam emitted by the lens according to the control signal given from outside, so that the mask is rotated around the axis parallel to the beam optical axis and transferred to the processing object. At least one of the object surface and the predetermined distance described above is a beam scanner in the direction of the accuracy of the surface of the object to be processed, and the process of setting the relationship between the proximity mask and the above-mentioned plus 11 two. , And can implement high-precision non-satisfactory transfer accuracy and the relationship between the number of laser beams at high speed, and enter the gap and diffusion angle with the desired transfer accuracy. Is to provide a laser processing device, a laser light source of the beam; and an optical system that maintains processing of the laser beam number emitted by the above laser light source, and can switch the direction of the incident laser beam; and A mask for the laser beam profile of the laser light emitted in a certain direction; and a lens for condensing the image of the rectangular shape of the mask through the surface of the work object; moving with the holding mechanism to make it incident on the processing object The position of the object is added to the mechanism; and the laser reticle rotation mechanism that controls the through hole of the mask according to the external payment; and controls the above-mentioned optical -14- (11) 200408486 system to cause the above-mentioned optical system to move the laser at a predetermined timing. The direction in which the light beam is emitted, and the moving mechanism is controlled to cause the incident position of the light beam to be processed by the moving mechanism to move to the first direction, and the mask rotation mechanism is controlled to cause the mask rotation mechanism to move on the upper mechanism. Before moving the laser beam incident position on the surface of the object to be processed in the first direction, make the mask rotate to make the rectangular through hole The control surface of the image of the work object is parallel to the first direction. On the surface of the processing object, it can irradiate a continuous wave laser beam with a shape pattern (line). At the same time, it can also cut out pulses from the continuous wave laser beam. Light beams are irradiated 'to easily form point-like discrete patterns (dots). The laser beam irradiation position is caused to move parallel to one side of the laser beam shape beam spot on the surface of the processing object, so that the line and the point can be uniformly rectangular. According to another aspect of the present invention, there is provided a laser processing method including: (0) switching a continuous wave laser beam emitted by a laser light source into the incident laser beam to switch it from a certain direction or not Optical system engineering; and (j) the laser beam emitted from the optical system in a certain direction is incident on a mask with a rectangular through-hole and is condensed with a lens, so that the image of the through-hole is being processed The process of the object image; and (k) the process of moving the image of the through-hole in the parallel direction of one side of the image on the processing object surface; and when a point-like discrete pattern is to be formed on the surface of the object to be added That is, in the above process (i) when the optical system emits laser beams intermittently in a certain direction, and a linear pattern is formed on the surface of the processing object, that is, in the above process (i), the mine and Adding light into a line and using the moment to become a law, you can square the exit line, face the surface into a pair of objects, and desire to continue in the direction from -15 to (12) (12) 200408486. Sexually Laser beam. On the surface of the object, a continuous wave laser beam can be irradiated to form a linear pattern (line). At the same time, a pulsed laser beam can be cut out from the continuous wave laser beam and irradiated to form a spot shape easily. Discrete patterns (points). By urging the laser beam irradiation position on the surface of the processing object to move along one side of the rectangular beam spot of the laser beam in parallel, it is possible to form lines and points outside the shape of a rectangle. Another aspect of the invention is to provide a laser processing device comprising: a holding mechanism capable of holding a processing object; a first laser light source capable of emitting a pulsed laser beam; and a second laser capable of emitting a continuous wave laser beam A light source; and the pulse laser beam emitted by the first laser light source and the continuous wave laser beam emitted by the second laser light source, and the beam point of the continuous wave laser beam includes the beam point of the pulse laser beam The optical system is irradiated on the surface of the processing object held by the holding mechanism; The moving mechanism held by the mechanism moves on the surface of the processing object. For a certain processing area on the surface of the processing object, a continuous wave laser beam is first irradiated and preheated, and then a pulse laser beam is processed. The surface layer of the processed area can be easily and selectively processed. According to another aspect of the present invention, a laser processing method is provided, which includes a pulse laser beam emitted from a first laser light source and (η) Laser light source projecting a continuous wave laser beam; and (〇) the surface of the object layer formed on the base layer and the surface of the base layer and having a surface layer formed with a material that is harder to irradiate laser processing than the base layer material. -16- (13) 200408486 is designated to be added. After being irradiated from the second laser light source to be preheated, the processing point is irradiated with a pulsed laser beam from the top. d like engineering. After preheating a certain continuous laser beam on the surface of the object to be processed, irradiation is performed. Therefore, the additive can be easily and selectively processed. [Embodiment] Fig. 1 is a schematic view of an injection processing apparatus capable of implementing the first embodiment of the present invention. Self-laser light source 1. For example, it contains a wavelength-changing laser oscillator that uses pulse energy lmJ / pulse to produce three times higher harmonics of Nd: YAG laser (wave beam is an adjustable attenuator that adjusts the pulse energy The dilator 3 with a diameter and parallel light exits and enters the conical optical system 4 and includes a pair of conical (shaped) lenses and a conical (shaped) lens 4 a, 4 b, for example, facing in the same type. The laser beam is The center of the beam profile is centered on the vertex, and the cone lens 4b is emitted from the axis of the upright cone. The conical optical system 4 converts the emitted profile to a weaker intensity at the center of the beam profile. This will be described in detail later. The conical optical system 4 also has a conical lens 4b on the side, and a convex lens is used. The continuous wave laser beam describes the field of the first laser light source projecting the surface to form the cavity, and the surface of the processing field with the pulsed laser beam is first irradiated. The laser processing method [Nd: YAG of unit: 50ns pulse width: I 355nm]. Laser light 2. Straight-cone optical system with expandable beam 4. 4 a, 4 b. First, a beam ′, which is arranged on the bottom of each other and superimposed on the upright cone portion mirror 4a and penetrates the laser beam from the cone, is stronger at the peripheral portion. Can replace the laser beam -17- (14) (14) 200408486 The laser beam emitted from the conical optical system 4 passes through the mask 5 having a rectangular through hole, for example, and the rectangular through hole of the mask 5 can be imaged on the substrate. 1 2 的 的 Objective lens 6. The mask 5 and the objective lens 6 can be moved in a direction parallel to the laser beam traveling direction by the voice coil mechanism 9 and 10 (also can be replaced with a driving mechanism such as a piezoelectric drive). The movement by the voice coil mechanism 9 and I 0 is performed by a signal sent from the controller 11. The substrate 12 is placed on a holding table 8. The laser beam focused by the objective lens 6 is incident on the electromagnetic scanner 7. The electromagnetic scanner 7 is composed of a scanner 7a for the X direction and a tracer 7b for the Y direction, and can scan a laser beam in a two-dimensional direction at high speed. Both the X-direction scanner 7a and the Y-direction scanner 7b are configured to include a swingable mirror. When the X and Y directions orthogonal to each other are defined on the substrate 12 held by the holding table 8, the scanner 7a for the X direction and the scanner 7b for the Y direction cause the laser beam to be scanned so that the objective lens 6 is focused. The incident point of the laser beam of light moves on the surface of the substrate 12 in the X direction and the Y direction, respectively. The electromagnetic scanner 7 can combine the scanner 7a for the X direction and the scanner 7b for the Y direction to scan the laser beam in a two-dimensional direction. The substrate 12 of the object to be processed is, for example, a substrate formed with an ITO film on a glass base material, and a laser beam is incident on the ITO film of the substrate 12 with a processing energy of about 1 J / cm2. FIG. 2 is a schematic view showing a light path of a laser beam on the substrate 12 through the mask 5, the objective lens 6, and the electromagnetic scanner 7. When the laser beam is incident on the incident position M on the substrate 12, M is a through hole with a mask 5 imaged. The length of the light path from the mask 5 to the objective lens -18- (15) (15) 200408486 is set to a, the length of the light path from the objective lens 6 to the incident position on the substrate 12 is set to b, and the objective lens 6 When the focal length is set to f, if the through holes of the mask are to be imaged on the substrate 12, the relational expression (1 / a) + (1 // b) -1 / f. * (1) is not allowed. Due to the operation of the electromagnetic scanner 7, the incident position of the laser beam becomes N from the incident position M on the substrate 12. Therefore, the angle of incidence for the injection position M and the angle of incidence for the injection position N are different from each other. 'If the mask 5 and the objective lens 6 are fixed as they are, the light path length from the objective lens 6 to the injection position M is the same as that of the objective lens 6. The lengths of the light paths to the incident position N are different from each other (the difference is set to Δb), so that the through holes of the mask 5 are not imaged on N. In the laser processing apparatus shown in FIG. 1, the controller 11 is synchronized with the operation of the electromagnetic scanner 7, and sends signals for moving the mask 5 and the objective lens 6 to the voice coil mechanism 9, 10, respectively. This signal keeps, for example, the light path length a from the mask 5 to the objective lens 6 and the light path length b from the objective lens 6 to the incident position on the substrate 12 to be constant, and causes the mask 5 and the objective lens 6 to move. signal. The voice coil mechanism 9, 10 receives signals from the controller 11 and moves the mask 5 and the objective lens 6 in directions parallel to the laser beam traveling direction, respectively. As shown in FIG. 2, when the incident position changes from μ to N, the distance that the mask 5 and the objective lens 6 are moved by the voice coil mechanisms 9 and 10 is Δb. The mask 5 and the objective lens 6 are only displaced by the same distance Δb in the same direction. Thereby, the through-hole of the mask 5 can be imaged at the injection position N while satisfying the above formula (1). -19- (16) (16) 200408486 Therefore, not only the two points of the positions M and N, but also the light path length a from the mask 5 to the objective lens a and the objective lens 6 are often used in laser beam scanning. The length b of the optical path to the incident position on the substrate 12 is constant, and it is possible to form an imaging mask 5 on the surface of the substrate 12 frequently. The mask 5 and the objective lens 6 are scanned synchronously with the laser beam caused by the electromagnetic scanner 7, and the optical path length a and the optical path length b are always kept constant and moved. At this time, the imaging magnification (reduction rate) of the through holes of the mask 5 is always constant. For example, the focal length f of the objective lens 6 is 8 3 3 mm, the optical path length a of the mask 5 to the objective lens 6 is maintained at a predetermined value of 5000 mm, and the optical path of the objective lens 6 to the incident position on the substrate 12 is When the length b is maintained at a predetermined value of Onim, the imaging magnification (reduction rate) of the through hole of the mask 5 is 1/5. FIG. 3A is a schematic plan view of a substrate 12 that can be irradiated with a shooting pulse laser beam on a rectangular through-hole of the imaging mask 5 on the surface to form a hole at the imaging position. A rectangular beam spot with imaged through holes is formed on the substrate 12, and holes are cut in the ITO film at the positions. FIG. 3B is a substrate 1 in which the rectangular through-hole of the mask 5 is imaged at a predetermined imaging magnification while the incident position of the beam is moved, and a groove is formed at the irradiation position by irradiating a four-shot pulse laser beam. 2 floor plan. Due to the electromagnetic scanner 7, the pulsed laser beam is scanned along the long side of the beam spot imaged into a rectangular shape. In addition, the beam is irradiated at a repetition rate of 50%, which promotes the continuous digging of holes in each firing station to form grooves. By forming a rectangular beam spot of a predetermined size, the laser beam can be scanned in a direction parallel to a pair of parallel sides (the long side in FIG. 3B). • 20- (17) (17) 200408486 Trench of width. As in this embodiment, when a pulsed laser beam is used, even if one pair of parallel side edges (longer sides in FIG. 3B) of the beam spot overlaps part of the pair of parallel side edges of the beam spot last shot, the lightning The beam is scanned. Since the opening side edge of the groove is formed by a straight portion of a rectangular beam spot, it has a straight shape without unevenness. From the viewpoint of ease of control and the like, it is preferable to form the light beam spot on the substrate 12 as one of the beam spot pairs, and the parallel sides are parallel to the X direction or the Y direction. The through holes of the mask 5 to be imaged on the substrate 12 may not be rectangular. By forming the beam spot into a shape having a pair of parallel sides, and scanning the laser beam in a direction parallel to the pair of parallel sides, a groove having a predetermined width without unevenness on the side edge of the opening can be processed. FIG. 4A is an example of a through hole of the mask 5. The through hole of the mask 5 is formed in a shape having a pair of parallel sides. The other pair of side edges connecting the pair of side edges to each other are bent inward. When a mask having such a through hole is used and the laser beam profile is shaped, a beam spot having a pair of parallel side shapes can be formed on the substrate 12. FIG. 4B is a schematic view of a hole digging in the base plate 12 when the through hole shown in FIG. 4A is imaged on the base plate 12. FIG. By continuously forming a hole having the same shape as the hole in a direction parallel to a pair of parallel sides, a groove having a predetermined width without unevenness on the side edge of the opening can be processed. In addition, since the cumulative energy density of the laser beam incident near the side edge of the trench is greater than the cumulative energy density of the laser beam entering the center of the trench, the side of the trench can be made closer to vertical. In addition, when laser processing is required to extend a groove extending in a single direction as shown in FIG. 3B, a one-dimensional electromagnetic scanner or a polygonal scanner with a shaking mirror can also be used. In this case, the scanning direction of the scanner should be aligned with the pair of parallel sides of the beam spot. 5A to 5C, the conical optical system 4 will be described. As described above, the conical optical system 4 can convert the beam wheel_ of the incident laser beam into a weak beam at the center of the beam profile and a stronger beam at the periphery. FIG. 5A is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted by the laser light source 1. FIG. Generally, the pulsed laser beam has a pulsed energy density that is more local in the central part of the profile, and the pulsed energy density decreases as it goes toward the periphery. The conical optical system 4 uses two conical lenses 4a and 4b to invert the central portion and the peripheral portion of the incident laser beam and emits it. Therefore, the beam profile of the laser beam emitted from the conical optical system 4 has a distribution that is weaker at the center of the beam profile and stronger at the periphery. FIG. 5B is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted from the conical optical system 4 and shaped by the mask 5. The beam has a pulse energy density distribution that is weaker at the center and stronger at the periphery. Fig. 5C is a schematic cross-sectional view of the substrate 12 taken along line C5-C5 in Fig. 3B. The laser beam having the beam profile shown in FIG. 5B is focused by the objective lens 6 and incident on the substrate 12, and the ITO film on the substrate 12 can make the inclination angle of the side surface close to 90 °. Therefore, the groove shown in FIG. 3B is a groove in which the opening side edge is formed in a straight line with a steep side wall. In addition, in synchronism with the operation of the electromagnetic scanner 7, the pulse energy of the pulsed laser beam can be adjusted to perform more excellent processing. Incident -22- (19) 200408486 When the incident angle of the laser beam on the substrate 12 becomes larger, the area of the incident A point becomes larger. Therefore, when the pulse energy scanned by the electromagnetic scanner 7 is fixed at a predetermined value, as the pulse energy density of the laser beam becomes larger as the incident angle becomes larger, the workability will be reduced. In order to maintain the predetermined workability, It is necessary to keep the pulse energy density of the incident light beam constant. The adjustable attenuator 2 is synchronized with the movement of the electromagnetic scanner 7 and the pulse energy change of the laser beam emitted by the laser light source 1 is changed. When the synchronization signal sent by 1 is 1 and the laser light plate is 12 with a large incident angle, the attenuation rate is reduced and the self-adjustable attenuation beam pulse energy is increased. And by this, the pulse energy density of the entering position can be kept constant in the beam scanning. In addition, although it is not constant, when the laser beam is changed to the substrate 1, the pulse rate caused by the adjustable attenuator 2 can be changed, so that the pulse energy density at the incident position can be changed to improve the processing quality. In addition, when the laser beam is incident on the substrate 12 and scanned, the operation of the electromagnetic scanner 7 causes the through hole (reduction rate) of the mask 5 to change, and at the same time, keeps the pulse of the laser beam incident position constant. It can satisfy the following two formulas, Δ 2 ^ f ^ xA] / (b— f— Δ]) /. — F).
[(a + Δ2) / (b — Δ2)]2：=(3 / b)2 / COS0 · 位置之光束 之雷射光束 ’射入位置 產生變化。 位置之雷射 作，係能使 依據控制器 束射入於基 器2射出之 雷射光束射 2之射入角 能量之衰減 動減小，而 ，亦可同步 的成像倍率 衝能量密度 • · (2) • · (3) (20) 200408486 對應雷射光束之向基板1 2的射入角0 (基板1 與射入光所成之角度）加以設定Δ!與42，對應射 移動遮罩5及物鏡6，促使遮罩5至物鏡6之光路 保持於a + Δ 2、物鏡6至基板1 2上之射入位置的 長度保持於b — Δ !即可。在此，a、b分別是0爲 遮罩5至物鏡6之光路徑長度，及物鏡6至基板1 射入位置的光路徑長度。又，f爲物鏡6之焦距。 未嚴密滿足上式（2)及（3)，射入角如變動時，藉變 倍率以趨小光束點面積，而能改善雷射加工品質。 變大時，將成像倍率（縮減率）予以趨小即可。 圖6爲具有可變化物鏡6至基板12上之射入 光路徑長度b的光路徑調整機構20之第一實施例 例有關之雷射加工裝置槪略圖。自圖1所示雷射加 除去音圈機構9及1 〇，而加入光路徑調整機構2 0 構成則與圖1所示雷射加工裝置之構成相同。在圖 雷射加工裝置，其遮罩5至物鏡6之光路徑長度a 。藉光路徑調整機構2 0乃能例如同步於電磁掃描| 動作，在雷射光束之掃描中，將物鏡6至基板1 2 入位置的光路徑長度b經常保持爲一定。藉此可使 之貫通孔經常以所定成像倍率（縮小率）在基板12 ，以加圖3 B所示之溝槽。 圖7爲光路徑調整機構2 0之槪略圖。光路徑 構2 0係含有例如2 1 a〜2 1 d四個反射鏡所構成。四 鏡分別促使所射入雷射光束之進行方向變化如9 0 2法線 入角0 徑長度 光路徑 0時之 2上之 又，雖 化成像 射入角 位置的 的變形 工裝置 。其他 6所示 爲~定 蓉7之 上之射 遮罩5 上成像 調整機 個反射 。，且 -24- (21) 200408486 由光路徑調整機構2 0將雷射光束以平行於所射入雷射 束進行方向之方向予以射出。反射鏡2 1 a與2 1 b兩個即 成移動部22。移動部22則沿圖中箭頭方向移動。物鏡 至基板1 2上之射入位置的光路徑長度b可使移動部2 2 位加以調整。當雷射光束對於基板1 2之射入角變大時 移動部2 2乃在圖7向上移動，藉縮短光路徑調整機構 內之雷射光束的光路徑長度，而能將光路徑長度b保持 一定。移動部22之移動，可接受控制器1 1之信號進行 。控制器1 1又藉促使電磁掃描器7之動作與移動部22 移動同步，而將圖6所示物鏡6至基板1 2上之射入位 的光路徑長度b保持於一定。 在圖6所示雷射加工裝置，雖將光路徑調整機構 爲調整光路徑長度b予以加入，惟爲調整光路徑長度a 可***於遮罩5與物鏡6之間。藉利用兩個光路徑調整 構2 0，在雷射光束之掃描中，亦能將光路徑長度a及 路徑長度b調整爲可滿足於關係式（1 )。 又，隨著所進行之加以，爲調整光路徑長度a或光 徑長度b而僅使遮罩5、物鏡6中之任一方移動亦無妨 例如可將物鏡6固定，僅移動遮罩5以滿足關係式（1 )。 以加工對象物，雖考慮在玻璃基底材料上形成ITO 之基板，惟使用矽基板上形成聚醯亞胺膜之基板，對聚 亞胺膜部分予以加工亦可。該等可作爲太陽電池基板或 晶基板使用。又，亦能加工呈聚醯亞胺膜上形成有ITO 之觸摸面板、或再加工半導體膜等。又，亦可加工薄膜 光 形 6 變 2 0 於 之 之 置 20 亦 機 光 路 膜 醯 液 膜 狀 -25- (22) (22)200408486 之加工對象物。 圖8 A爲搬運薄膜3 0用之搬運機構3 1槪略圖。薄膜 3 0即由搬運機構3 1予以搬運。真空夾頭3 2係固定被搬 運過來之薄膜 3 0上的所定加工位置，以劃定被加工面、 且藉將由電磁掃描器7掃描之雷射光束射入於由真空夾頭 32所固定之薄膜30上，而進行所定加工位置之加工。當 完成所定加工位置之加工時，搬運機構3 1乃搬走薄膜3 0 ，以真空夾頭3 2固定另外加工位置，再進行加工。 以往是將真空夾頭32固定之薄膜30以XY方向平台 予以移動，藉使用固定光學系統照射射束而進行加工。在 本實施例，則由電磁掃描器7掃描射束，將射束射入於加 工位置以進行加工，因此能增快加工速度。 圖8 B爲具有旋轉編碼器3 3之搬運機構3 1槪略圖。 旋轉編碼器3 3可檢測搬運機構3 1所搬運之薄膜3 0速度 。檢測結果即被送至控制器1 1，且由控制器1 1自搬運速 度求得薄膜3 0之搬運量。控制器1 1又將從薄膜3 0之搬 運速度，及薄膜3 0上所劃定之所定加工位置的資料而作 成之控制信號發送至電磁掃描器7。再由電磁掃描器7接 受控制信號掃描雷射光束，對薄膜3 0上之所定加工位置 照射射束以進行加工。 由於不需要XY方向平台，可隨著搬運薄膜30進行 加工，是故能增快加工速度。 藉利用自圖1所示雷射加工裝置除去圓錐光學系統4 、遮罩5及音圈機構9之雷射加工裝置，亦能進行焦點加 -26· (23) (23)200408486 工。雷射光束係由物鏡6予以聚焦在基板1 2上成像。當 電磁掃描器7作動，致雷射光束掃描基板1 2上，而基板 1 2上之射束射入位置變化時，物鏡6乃沿與通過物鏡6 之射束進行方向呈平行的方向移動，促使由音圈機構10 將物鏡6至基板1 2之雷射光束的光路徑長度b保持於一 定。且藉該移動，雷射光束經常在基板1 2上成像。於是 ，能實現品質良好之加工。 本實施例雖使用脈衝雷射光束，爲隨著所進行加工， 亦可使用連續波雷射光束。又，以雷射光源雖使用含有波 長變換單元之Nd : YAG雷射振盪器，而射出Nd : YAG 雷射之三倍高次諧波’但亦可使用固體雷射之基本波〜五 倍高次諧波。又，亦能使用C02雷射等。 又，在本實施例雖以高速掃描光學系統使用電磁掃描 器，然亦可使用利用多角鏡之高速掃描光學系統。由於並 非藉X Y方向平台移動加工對象物以改變雷射光束之射入 位置，而是使用局速掃描光學系統掃描雷射光束以改變雷 射光束之射入位置，因此能提升加工速度。 在上述焦點加工方法，係令雷射光束經常成像於基板 表面。接著，就將雷射光束焦點與基板表面之位置關係對 應雷射光束之基板表面射入位置予以調整，而進行品質良 好的加工方法說明之。 圖1 2 A所示第二實施例之雷射加工裝置，則是自圖1 所示雷射加工裝置除去圓錐光學系統4、遮罩5及音圈機 構9，更被除去可調式衰減器2，且在擴張器3與物鏡6 -27- (24) 200408486 間配置有具圓形貫通孔可調節射束直徑之孔徑 不需將孔徑5 a之貫通孔成像於基板1 2表面。 藉利用音圈機構1 0使物鏡6沿通過物鏡6 束進行方向平行移動，將雷射光束焦點接近於基 面或自基板1 2表面予以離開’而調節照射於基 雷射光束的脈衝能量密度。 由於控制器1 1所發送控制信號’電磁掃描 雷射光束以所盼之時序搖擺於所盼之進行方向。 器1 1所發送控制信號，令音圈機構1 0同步於電 7作動，對應雷射光束之射入位置’能將雷射以 衝能量密度照射基板1 2。 參照圖1 3以說明使用圖1 2 A之雷射加工裝 加工方法一例。在圖1 3上側，槪略地顯示經過导 磁掃描器7進行掃描基板1 2上之雷射光束光路哲 雷射光束 Lib乃垂直地射入於基板表面之 Μ 1。雷射光束L 1 a , L 1 c分別以射入角α 1射入於 Nla,Nlc。射入位置Ml則位於以射入位置Nla 端之線分中點。 圖1 3下側爲顯示自電磁掃描器7側向下觀 表面。光束點91a, 9 lb.91c是分別顯示雷射3 Llb,Llc之在基板表面的（即射入位置Nla5Ml，Nl 點。 使雷射光束之進行方面自雷射光束Lla之光 至雷射光束L 1 c之光路徑一方地，反覆照射脈衝 5a ^而並 之雷射光 板12表 板表囬之 器7係使 藉自控制 ，磁掃描器 所盼之脈 置的雷射 勿鏡6、電 g 〇 射入位置 射入位置 ，Nlc爲兩 看之基板 束 L 1 a， c的）光束 路徑搖擺 雷射光束 -28- (25) 200408486 ，與圖1 0 A、圖1 0 B所示一樣，俾使各照射雷 成孔穴予以連續地，在基板表面形成溝槽1 0 1 ' 首先照射形成溝槽1 0 1之起點的雷射光束 物鏡6之位置設定於可使雷射光束l ] a成像 N 1 a。且，將光束點之大小呈最小的點稱爲雷 點。 當照射形成溝槽1 0 1之終點的雷射光束L 鏡6之位置設定於可使雷射光束L 1 c成像於射 。由於物鏡6至射入位置Nla,Nlc之光路徑長 可認爲物鏡6之位置在溝槽加工開發時與結束 。由於雷射光束L 1 a及L 1 c之射入角相同，亦 點9 1 a與9 1 c面積相同。 在此先說明將物鏡6固定於該位置原樣進 之掃描以形成溝槽時，會產生何種問題。 將物鏡6固定於可使雷射光束L 1 a在射 成像（或雷射光束L 1 c在射入位置N 1 c成像）的 電磁掃描器7搖擺進行方向之雷射光束的焦點 假想面設爲聚光面8 1 a。聚光面8 1 a上之點R 光束L 1 b之焦點位置。 在射入位置N 1 a，N 1 c以外之溝槽1 〇 1上的 雷射光束則在聚焦呈焦點之途中射入於基板。 至焦點之距離愈長，射入位置之射束直徑比焦 徑愈大。射入位置與焦點之距離，以照射於溝 射光束Lib爲最大。 射位置所形 L 1 a時，將 於射入位置 射光束之焦 1 C時，將物 入位置N 1 c 度略同，故 時相同。又 可6忍爲光束 行雷射光束 入位置N 1 a 位置時，被 軌跡所描繪 即顯示雷射 射入位置， 自射入位置 點之射束直 槽中央之雷 -29- (26) (26)200408486 雷射光束之脈衝能量密度，通常，射束剖面之中心比 外周近旁爲高。射束直徑變大時，射束剖面1 ]內之各位 置脈衝能量密度即降低。因此，射束直徑雖變大，呈能加 工基板之閾値以上脈衝能量密度的領域卻僅限於射束剖面 之中心附近。 溝槽1 〇 1端部之射入位置N 1 a.N 1 C近旁，係以高脈衝 能量密度被照射射束直徑雖小惟脈衝能量密度到射束剖面 外周近旁依然呈加工閾値以上之雷射光束，而被形成寬度 較粗之溝槽。另，在射束剖面中心之射入位置Μ 1近旁， 乃以低脈衝能量密度被照射射束直徑雖大惟脈衝能量密度 僅在射束剖面中心之狹窄領域呈加工閾値以上之雷射光束 ，而被形成寬度較細之溝槽。如此，溝槽寬度隨著位置而 變動。 又，雷射光束Lib之射入位置Ml至聚光面81a上之 點R的距離是射入角α 1愈大愈長。於是，射入角α 1愈 大，照射於射入位置Ν 1 a，N 1 c之雷射射束直徑與照射於射 入位置Μ 1之雷射射束直徑的差愈大。亦即，溝槽端部與 中央之寬度差愈顯著。由於射入角^ 1爲形成溝槽端部之 雷射光束射入角，致例如在大型基板形成較長溝槽時等會 變大。 其次，說明移動物鏡6位置以調節焦點位置同時進行 雷射光束掃描，而形成溝槽之方法。調節雷射光束之焦點 位置，照射於基板之雷射光束的射束直徑即被調節，可調 節基板表面之脈衝能量密度。 -30- (27) (27)200408486 茲考慮射入於射入位置Μ 1之雷射光束L 1 b的焦點對 準何處較適宜。將焦點設定於比聚光面8 1 a上之點R更接 近於射入位置Μ 1，係能縮小射束直徑’使射入位置Μ 1 之脈衝能量密度增加予以補正。惟’將焦點愈接近於射入 位置Μ 1時，射入位置Μ 1之脈衝能量密度變爲比射入位 置Ν 1 a . Ν 1 c之脈衝能量密度高。 且由於雷射光束Lib是垂直射入於基板表面，因此在 射入位置Μ 1成像之光束點呈圓形。另，由於雷射光束 Lla;Llc是以射入角α 1斜向射入於基板表面，因此光束 點9 1 a, 9 1 c呈擴寬之橢圓形狀。亦即，雷射光束L 1 b在射 入位置Μ 1成像時之光束點9 1 b的脈衝能量密度，比光束 點9 1 a，9 1 c之脈衝能達；密、度爲局。 於是，將雷射光束L 1 b之焦點對準於比射入位置Μ 1 稍深（自射入位置Μ 1向基板內部較遠）位置，促使光束點 9 1 b之面積等於射入位置Ν 1 a之光束點9 1 a, 9 1 c的面積。 如此，則能以與射入位置Ν 1 a或Ν 1 c以及Μ 1相同之脈衝 能量密度照射雷射而進行加工。 在溝槽1 〇 1上之其他射入位置，亦可將光束點之面積 保持爲一定以整齊脈衝能量密度，予以進行加工。將溝槽 1 0 1上以不變化光束點面積之條件進行掃描時之焦點軌跡 即爲聚光面8 1 b。且雷射光束L 1 b之焦點位置是聚光面 8 1 b上之點Q。 茲說明使焦點沿聚光面8 1 b上予以移動時，如何調整 物鏡6之位置。首先，將物鏡6設定於照射雷射光束L1 a •31 - (28) (28)200408486 時可在射入位置N 1 a成像之位置。該位置被稱爲基準位置 c 將雷射光束由射入位置N 1 a向Μ 1予以掃描時，藉使 物鏡6自基準位置徐徐移向雷射光源，令焦點沿比聚光面 81a更接近於基板表面之聚光面81b移動，光束點之面積 即變大，而可抑制脈衝能量密度降低。物鏡6自基準位置 之移動距離，乃就射入於射入位置N 1 a之雷射光束L 1 a 予以設爲零，隨著雷射愈往射入位置Μ 1愈予以增大，就 射入於射入位置Μ 1之雷射光束L 1 b予以設爲最大。 繼之，將雷射光束由射入位置Μ 1向射入位置N 1 c進 行掃描時，使物鏡6徐徐接近於基準位置即可。物鏡6與 基準位置之離間距離，則隨著雷射光束愈往射入位置Ν 1 c 愈予以減少，就射入於射入位置Ν 1 c之雷射光束L 1 c予 以設爲零。 如是，藉使射入各射入位置之雷射光束焦點沿聚光面 8 1 b上移動地調節物鏡6之位置予以進行掃描雷射，而能 抑制寬幅隨著處所變動以形成溝槽1 0 1。 就使溝槽1 〇 1移動之方法加以歸納。不移動物鏡6位 置繼續掃描致基板表面之脈衝能量密度降低時，係移動物 鏡6促使雷射光束焦點接近於射入位置，以抑制脈衝能量 密度之降低。不移動物鏡6位置繼續掃描致基板表面之脈 衝能量密度上升時，相反地，移動物鏡6促使雷射光束焦 點位置離開射入位置，以抑制脈衝能量密度之上升即可。 以加工一例，雖說明在溝槽兩端射入位置令焦點對準 -32- (29) (29)200408486 於基板表面之方法，惟將焦點對準於另別之射入位置亦可 。由於只要將各射入位置之光束點保持於略一定面積，就 能整齊脈衝能量密度進行加工，故對任何射入位置均能保 持所定之加工性。 又’不必將所照射雷射光束之脈衝能量密度在各射入 位置予以保持於一定，僅在射入位置變動時抑制射入位置 之脈衝能量密度變動，乃能良好地進行加工。 雖將溝槽加工（劃割加工）爲例加以說明，惟亦可進行 開鑿孔穴加工等。又雖說明將電磁掃描器掃描於一維方向 之例，惟予以掃描二維方向，以進行基板全面之加工亦可 。又將使用脈衝雷射光束之加工爲例加以說明，惟雷射光 束爲連續波亦無妨。以連續波雷射光束加工時，則需抑制 被加工面之功率密度隨著各射入位置變動。 照射於基板之雷射光束的脈衝能量密度，替代移動物 鏡6，亦可利用可調式衰減器予以調節。 圖1 2 B所示第二實施例之變形例的雷射加工裝置，就 是在圖12A所示雷射加工裝置追加可調式衰減器2者。 可調式衰減器2係依據控制器1 1發送之控制信號，與電 磁掃描器7之動作同步，將照射於基板1 2之脈衝雷射光 束的功率，以所盼之衰減率予以衰減。 茲參照圖1 4以說明利用可調式衰減器之雷射加工方 法一例。圖1 4爲在圖1 2 B所示雷射加工裝置之經過物鏡 6、電磁掃描器7，而掃描基板1 2上之雷射光束光路徑的 槪略顯示圖。 -33- (30) 200408486 雷射光束L 2 b係垂直地射入於基板表 Μ 2。雷射光束L 2 a，L 2 c分別以射入角α 2射 Ν 2 a · Ν 2 c。且射入位置Μ 2位於以射入位置 端之線分中點。 物鏡6被固定於雷射光束L2b可在射入 之位置。將由電磁掃描器7予以搖擺進行方 焦點所描繪假想面設作聚光面82。 與參照圖1 3進行說明一樣，使雷射光 自雷射光束L2a光路徑搖擺爲雷射光束L2c 覆照射脈衝雷射光束，而在基板表面形成溝; 隨著雷射光束射入位置愈離開射入位置 束成像再射入於基板之距離變長。由於通過 光束變爲發散射束，致自焦點至射入位置之 板表面之光束點變爲愈大。 又，隨著射入位置愈離開射入位置M2 基板之射入角愈變大。雖以具相同射束直徑 以照射，亦隨著射入角愈大，基板表面之光: 如參照圖1 3所作說明，較大光束點內 度則射束剖面全體降低，呈能加工基板之閾 於射束剖面中心附近。因此，由較大光束點 溝槽寬度較細。 對於任何射入位置均以一定之脈衝能量 形成溝槽時，溝槽中央附近被形成爲寬度較 被形成寬度較細。 面之射入位置 入於射入位置 N2a.N2c 爲兩 位置Μ 2成像 向之雷射光束 束之進行方向 光路徑地，反 漕。 Μ 2，雷射光 焦點後之雷射 距離愈長，基 ，雷射光束對 之雷射光束加 束點愈大。 之脈衝能量密 値以上卻僅限 照射所形成之 照射雷射予以 粗，溝槽端部 -34- (31) (31)200408486 於是，促使基板表面之脈衝能量密度在任何位置均呈 一定地，由可調式衰減器2對應射入位置予以調節功率。 將功率衰減量，在加工溝槽端部時設爲最小，隨著愈往溝 槽中心愈增大，且在照射溝槽中心之射入位置M 2時設爲 最大。如此，即能抑制寬度隨著處所變動，而形成溝槽。 又，爲圖謀照射於基板之雷射光束的脈衝能量密度之 均勻化，亦可將由音圈機構1 〇移動物鏡6促使焦點位置 移動，與由可調式衰減器2衰減脈衝雷射光束之組合加以 利用。 又，雷射光束亦可爲連續波。以連續波雷射光束進行 加工時，則可抑制被加工面之功率密度隨著各射入位置變 動地，以可調式衰減器調節連續波雷射光束之功率。 而，在例如表面形成ITO膜之玻璃基底材料的加工， 乃有基板尺寸大型化之趨勢。隨著基板大型化，被加工領 域變大時，即在如參照圖〗3所說明之對應雷射光束射入 位置移動物鏡6予以進行之加工，會發生物鏡6移動量變 大之情形。但自控制之容易性的觀點言之，能使物鏡6移 動量趨小較佳。 接著，參照圖1 5 A，就將物鏡6之移動抑制於短距離 ，並能增長雷射光束之焦點位置移動距離的第三實施例之 雷射加工裝置加以說明。 在圖15A所示雷射加工裝置，係在圖12A所示雷射 加工裝置之物鏡6與電磁掃描器7間，追加有二次聚光鏡 7 1。且，在圖1 5 A之說明，將物鏡6稱爲一次聚光鏡6。 -35- (32) (32)200408486 自孔徑5 a所射出雷射光束，乃射入於一次聚光鏡6 。一次聚光鏡6即將雷射光束聚光於假想性一次聚光面 8 3上。通過一次聚光面8 3之雷射光束則變爲發散射束射 入於二次聚光鏡7 1。由二次聚光鏡7 1予以收歛之雷射光 束即被電磁掃描器7搖擺進行方向射入於基板1 2。 其次，說明一次聚光鏡6之移動量。使一次聚光鏡6 接近於二次聚光鏡7 1時，由二次聚光鏡7 1收歛之雷射光 束焦點位置係沿雷射光束進行方向移動。將一次聚光面 8 3之移動距離設爲d 1、將雷射光束焦點之移動距離設爲 d2。且，將對於射入二次聚光鏡7 1之雷射光束的二次聚 光鏡71之數値口（孔）徑設爲NA2。將倍率P定義爲 P = ΝΑΙ / NA2 時， d 2 = d 1 xp 2 可成立。 自上述可知，將倍率P增大，就是縮短一次聚光面 8 3之移動距離d 1，亦能增長焦點之移動距離d2。例如， 倍率P爲2時，藉使一次聚光面83以2mm接近二次聚光 鏡7 1，而可使雷射光束之焦點向雷射光束進行方向移動 8 m m ° 一次聚光面8 3之移動，乃藉將一次聚光鏡6移動於 光軸方向進行之。射入於一次聚光鏡6之雷射光束是平行 射束時，一次聚光鏡6之移動距離與一次聚光面83之移 動距離即相等。如一次聚光鏡6移動距離約爲2mm以下 -36- (33) (33)200408486 ’則可利用採用壓電驅動機構之直接作用機構。藉替代音 圈機構1 0利用採用壓電驅動機構之直接作用機構’就能 以商速且高精度地移動一次聚光鏡6。 在圖1 6顯示二次聚光鏡7 1之一構成例。二次聚光鏡 7 1係由多數透鏡所構成。物點S 〇與像點S i處在共軛關 係。該物點S 〇相當於圖1 5 A所示一次聚光面8 3上之光 束點的位置。將該成像光學系統假想是無限遠共軛之光學 系統。且將二次聚光鏡7 1分割爲前側透鏡群7 1 a與後側 透鏡群7 1 b。並將物點S 〇射出之射束藉前側透鏡群7 1 a 予以形成爲平行射束。再以後側透鏡群7 1 b將該平行射束 成像於像點S i。又，二次聚光鏡7 1雖有時無法物理性地 加以分割，但在此，假想可假定性地予以分割。 假設前側透鏡群7 1 a之前焦點距離爲Ff ’後側透鏡 群7 1 b之後焦點距離爲Fr。此時，上述式所定義之倍率P 可由 P = F r / F f 表示之。 圖1 5 A所示雷射加工裝置，雖將一次聚光鏡.6由凸 鏡構成，惟如圖1 5 B所示，由凹鏡6a構成亦可。此時， 一次聚光面83變爲重像，出現於比凹鏡6a更靠近於雷射 光源側。 如是，藉將倍率P增大，乃能將一次聚光鏡6之移動 距離抑制於較短原樣，使照射於基板之雷射光束焦點位置 大大地變化。欲奏出有爲之效果，將倍率P設定爲2以上 -37- (34) (34)200408486 較妥，設定爲4以上更妥。 而，圖1 3所示光束點9 1 a , 9 1 c由於是以斜向射八於 基板之雷射光束的光束點，致呈橢圓形。另’光束點9 1 b 則是以垂直射入於基板之雷射光束的光束點’致呈* ®开^ ~ 如此，射入角隨著雷射光束之射入位置相異’故基板i之 光束點形狀會產生不同。 所加工之孔穴開口，如光束點爲橢圓形即呈橢圓形’ 如爲圓形即呈圓形。惟，有時亦有不管任何位置均欲將孔 穴開口形成爲同一形狀（例如圓形）之情形。 其次，參照圖1 7，就能將光束點形狀對應射入位置 可加以補正之第四實施例的雷射加工裝置說明之。 圖1 7所示雷射加工裝置是對於圖1 2所示雷射加工裝 置追加可使孔徑5 a沿垂直於雷射光束光軸之軸周圍旋轉 的孔徑傾斜機構6 0 a，與可使孔徑5 a沿平行於雷射光束 光軸之軸周圍旋轉的孔徑旋轉機構6 1 a者。 又，孔徑旋轉機構6 1 a係爲與以後參照圖2 2 A說明之 雷射加工裝置所具促使遮罩旋轉的遮罩旋轉機構同樣之機 構，可使孔徑5 a旋轉於雷射光束光軸之平行軸的周圍。 孔徑傾斜機構60a、孔徑旋轉機構6 1 a分別依據控制 器1 1所發送之控制信號，同步與電磁掃描器7之動作， 而變化孔徑5 a與垂直於雷射光束光軸之軸周圍所呈傾斜 角度’及與平行於雷射光束光軸之軸周圍所呈旋轉角度。 么么比較雷射光束斜向射入於基板表面時之基板表面上 的射束剖面形狀與垂直於光軸的射束剖面形狀。基板表面 -38- (35) (35)200408486 上之射束剖面形狀乃呈垂直於光軸的射束剖面形狀被沿基 板表面與射入面之交叉線方向拉伸的形狀。例如，圓形剖 面之雷射光束斜向射入於基板表面時，基板表面之射束剖 面即呈沿基板表面與射入面之交叉線方向較長的橢圓形。 又，射入角愈大，基板表面之射束剖面愈呈沿交叉線方向 較長之形狀。 因此，將垂直於光軸之剖面被整形爲長軸與短軸比適 當的橢圓之雷射光束，俾使其橢圓長軸方向垂直於射入面 地予以斜向射入於基板表面，料應能使基板表面之光束點 呈圓形。 圖1 8 A爲將由孔徑傾斜機構6 0 a沿垂直於雷射光束光 軸之軸周圍所旋轉孔徑5 a，由孔徑傾斜機構60a旋轉軸 方向予以觀看之槪略顯示圖。自圖左方射入之雷射光束 1 b在孔徑5 a被整形剖面後由圖右方射出。 如圖1 8 B所示，被孔徑傾斜機構6 0 a旋轉之孔徑5 a 的圓形貫通孔，如以沿雷射光束光軸之視線觀看時，看似 橢圓形。即，雷射光束剖面已被整形爲橢圓形。 又，孔徑5 a之圓形貫通孔相異的兩直徑所伸展之面 ，如與雷射光束光軸正交時，雷射光束剖面則被整形爲圓 形。令孔徑5 a逐漸傾斜，隨著圓形貫通孔之旋轉中心軸 與雷射光束光軸所成角度變大，整形後之射束剖面的短軸 愈變短。如是，孔徑傾斜機構60a能改變整形後射束剖面 之縱橫比。 如圖1 8 C所示，再利用孔徑旋轉機構6 1 a將孔徑5 a -39· (36) (36)200408486 沿與雷射光束光軸呈平行之軸周圍予以旋轉。 雷射光束之光束點呈最小的位置（稱爲雷射光束焦點） 之射束剖面形狀爲橢圓狀。焦點之射束剖面的長軸方向， 即對應於孔徑5 a之貫通孔位置的射束剖面之短軸方向。 因此，令貫通孔位置的射束剖面之長軸方向一致於交 叉線方向地，以孔徑旋轉機構6 1 a旋轉孔徑5 a。如此， 可將基板上之光束點形狀，不管任何位置均保持爲圓形 又，雖就不需要把孔徑5 a之貫通孔成像於基板表面 的聚光法加工予以說明，惟在進行使貫通孔之像在基板表 面成像的遮罩投影法加工時，亦能補正基板上之光束點形 狀。遮罩投影法時，基板表面上所形成貫通孔之像的長軸 方向，即對應於遮罩之貫通孔位置的射束剖面之長軸方向 c 使具圓形貫通孔之遮罩，在雷射光束光軸之垂直軸周 圍予以傾斜卻相同。惟，再使遮罩旋轉於雷射光束光軸之 平行軸周圍時，則令射出貫通孔時之射束剖面的橢圓形短 軸方向一致於射入面與基板表面交叉線方向予以旋轉。 雖就貫通孔形狀爲圓時進行說明，但亦能補正由其他 形狀之貫通孔所整形之雷射光束的光束點形狀。 接著，參照圖1 9，以說明使用近接遮罩進行雷射加 工方法的第五實施例之雷射加工裝置。圖1 9所示雷射加 工裝置是在圖12所示雷射加工裝置追加近接遮罩63者。 近接遮罩63由近接遮罩保持機構64予以保持，與基 板1 2表面呈平行地被配置於基板1 2正上面。近接遮罩 -40- (37) (37)200408486 6 3被形成具有與欲加工於基板表面之形狀的相同形狀之 貫通孔。近接遮罩63與基板12表面之距離（近接間隙）dg 可由近接遮罩保持機構64予以調節。 擴張器3係將雷射光源1射出之雷射光束的射束直徑 擴大，而射出平行光之雷射光束。由擴張器3射出之雷射 光束具有擴散角A。以擴張器3將雷射光束的射束直徑擴 大例如1 〇倍時，擴散角yS即被減少爲呈I 0分之一。藉擴 張器3可將雷射光束之擴散角予以調整。 由電磁掃描器7掃描近接遮罩6 3上同時，並進行照 射雷射光束。雷射光束乃通過近接遮罩6 3之貫通孔射入 於基板1 2，而加工基板1 2。貫通孔以外部分並不通過雷 射光束，基板1 2不被加工。如是，能將近接遮罩63所具 貫通孔之形狀予以轉印，在基板表面進行加工。 此時，雷射光束之射入位置雖變動，亦能抑制基板表 面之脈衝能量密度的變動，將物鏡6位置對應雷射光束之 射入於基板的位置予以移動，以進行照射雷射。又，雷射 光源1亦可爲射出連續波雷射光束者。此時，應促成可抑 制基板表面之功率密度的變動。 且，欲進行高精度加工時，需將近接遮罩63所具貫 通孔之形狀正確地轉印於基板。轉印之精度乃依存於照射 於近接間隙d g及近接遮罩6 3之雷射光束的擴散角。照射 於近接遮罩之雷射光束的擴散角可推想與通過擴張器時之 雷射光束的擴散角/3相同。 在圖2 0，就具T字狀貫通孔之近接遮罩，顯示轉印 -41 - (38) (38)200408486 半円度依存於近接間隙及雷射光束之擴散角如何變化的模擬 結果。亦是將近接間隙及雷射光束之擴散角加以各種變化 日寸的T子狀貫通孔之像9 7以排列顯示。各圖式，愈被配 置於右側者其雷射光束之擴散角愈小，且愈被配置於下側 者其近接間隙愈小。 像9 7之邊緣愈明確其轉印精度愈高。自圖式可知， 相同擴散角時’近接間隙愈大轉印精度愈劣化。又，相同 近接間隙時’擴散角愈大轉印精度愈劣化.近接間隙、擴 散角均愈小愈能提高轉印精度。 在圖2 1槪略顯示欲確保某轉印精度時，近接間隙與 雷射光束之擴散角非滿足不可之關係曲線圖。欲確保某轉 印精度時，近接間隙如較大，就非將擴散角設成較小不可 ，擴散角如較大，就非將近接間隙設成較小不可。 針對各種轉印精度，如預先求得如圖2 1所示近接間 隙與雷射光束之擴散角非滿足不可之關係，則在欲以所盼 轉印精度進行加工時，能簡便地選定近接間隙與擴散角。 使用近接遮罩之雷射加工方法，乃具有將近接間隙與 擴散角設定較小，以高轉印精度進行加工之優點。又，藉 在基板之被加工位置正上面配置近接遮罩之貫通孔予以進 行加工，而可獲得較高之定位精度。除了被加工位置以外 ’由於皆以近接遮罩覆蓋於基板表面，故尙有加工時基板 被切削所發生之飛散物，不易附著於基板表面之優點。 又，在進行以通過近接遮罩之貫通孔的雷射光束照射 基板之加工時，將雷射光束對於基板之射入位置的移動， -42- (39) (39)200408486 藉由電磁掃描器予以搖擺雷射光束之進行方向，而比起移 動裝載基板之XY方向平台以進行射入位置移動時，更能 謀圖加工之高速化。 其次，參照圖22A說明具有能振盪連續波雷射光束 之雷射光源的第六實施例之雷射加工裝置。能振盪連續波 雷射光束之雷射光源1係可使用例如能振盪連續波雷射光 束之半導體雷射。 自雷射光源1射出之雷射光束IbO乃射入於分光光學 系統6 5。分光光學系統6 5則將雷射光束1 b 0在某時區分 配爲沿某光軸進行之雷射光束1 b 1，在其他時區分配爲沿 其他光軸進行之雷射光束lb2。 分光光學系統65是含著半波長板65a、顯示泡克爾效 果之光電元件6 5 b、偏光板6 5 c所構成。半波長板6 5 a將 雷射光源1所射出雷射光束IbO設成對於偏光板65c成爲 P波之線性偏振光。該P波即射入於光電元件6 5 b。 光電元件65b係依據控制器1 1送出之契機信號si g， 旋轉雷射光束之偏振軸。光電元件6 5 b處在無施加電壓狀 態時，將所射入P波原樣予以射出。光電元件6 5 b處在施 加電壓狀態時，該光電元件65b使P波之偏振面旋轉90 度。藉此，自光電元件6 5 b射出之雷射光束對偏光板6 5 c 成爲S波。 偏光板6 5 c使P波原樣透過，將S波予以反射。在偏 光板6 5 c反射之S波的雷射光束1 b 1則射入於成爲雷射光 束lbl終端之光束阻尼器66。而透過偏光板65c之P波 -43· (40) (40)200408486 的雷射光束1 b2即射入於擴張器3。 由擴張器3擴大射束直徑，被形成爲平行光之雷射光 束1 b 2乃射入於具矩形貫通孔之遮罩5。在此，以遮罩投 影法加工爲例說明之。亦即，使遮罩5之貫通孔成像於基 板1 2表面，而進行加工。 遮罩旋轉機構6 1係被使用爲促使遮罩5旋轉於與雷 射光束光軸呈平行之軸周圍。遮罩旋轉機構6 1含著例如 測角器所構成，依據控制器1 1所送出控制信號，以所盼 時序使遮罩旋轉所盼角度。遮罩旋轉機構6 1容後再詳述 。音圈機構9則使遮罩5之位置沿雷射光束進行方向予以 平行移動。 自遮罩5射出之雷射光束1 b2即由物鏡6所聚焦。音 圈機構1 〇乃使遮罩5之位置沿雷射光束進行方向平行移 動。由物鏡6射出之雷射光束通過電磁掃描器7後，射入 於基板1 2表面。 參照圖22B以說明加工對象物之基板1 2。基底層1 1 0 之表面上存在著轉印層1 1 1。該轉印層1 1 1具有被加熱即 粘接於基底層1 1 〇表面之性質。 例如，將轉印層1 1 1之一部分1 1 1 a藉照射雷射予以 粘接於基底層U 0。且除去轉印層1 1 1中之未被加熱部分 111b時，在基底層11〇表面上僅殘留被加熱部分111a。 此爲類似在進行熱轉印式印刷時，墨水帶之被加熱部分的 墨水轉印於紙張。 回到圖22A繼續說明。XY方向平台8a被使用爲基 -44- (41) (41)200408486 板12之保持台。XY方向平台8a可使基板12在與基板 1 2表面呈平行之二維平面內移動。且藉控制器 Π控制 X Y方向平台8a，可使基板1 2以所盼時序移動至所盼位 置。 在此說明之雷射加工方法例，係將電磁掃描器7之X 方向用掃描器7 a及Y方向用掃描器7 b固定於可使電磁掃 描器7射出之雷射光束垂直射入於基板1 2的位置。藉以 XY方向平台8a移動基板12，而能使雷射光束對於基板 1 2之射入位置移動。 使用音圈機構9,1 0、能將遮罩5至物鏡6之光路徑長 度及物鏡6至基板1 2之雷射光束射入位置的光路徑長度 設定爲；可使遮罩5之貫通孔的像以所盼的成像倍率成像 於基板1 2表面。 參照圖23說明分光光學系統之控制方法。圖23爲契 機信號s i g、雷射光束1 b 0，1 b 1，1 b 2之一例示。在時刻t 0 開始射出雷射光束1 b 0。 時刻t 0至時刻t 1，自控制器並不送出契機信號si g 。此間，光電元件未被施加電壓，由分光光學系統經常射 出雷射光束1 b 2。雷射光束1 b 1卻未被射出。此間之雷射 光束lb2呈連續波。 時刻t 1至時刻t 2，同步與控制器週期性送出之契機 信號sig，對於分光光學系統之光電元件施加電壓。 被送出契機信號sig期間，光電元件係呈施加電壓狀 態，雷射光束1 b0被分配爲雷射光束1 b 1。另，未被送出 -45 - (42) 200408486 契機信號s i g期間，光電元件呈未施加電壓狀態， 束1 b 0被分配爲雷射光束1 b 2。於是，時刻t 1至日〗 之雷射光束lb2乃成爲週期性反覆振盪與停止之雷 c 就該間歇性射出之雷射光束1 b 2，藉調節契 s i g可將脈衝寬度w 1及週期w2設定爲任意之長度 ，將脈衝寬度w 1設爲1 〇 e s〜數1 〇 " s，將週期ν 數 100 A s。 如是，分光光學系統未被輸入契機信號時，可 續性射出之雷射光束1 b2，分光光學系統被間歇性 璣信號時，可獲得間歇性射出之雷射光束1 b2。 且，連續性射出之雷射光束1 b2由於能連續性 基板，對於例如形成線之加工（基地層上殘留線狀 之加工）較適宜。另，間歇性射出之雷射光束1 b2 間歇性照射於基板，對於例如形成點之加工（基地 留點狀轉印層之加工）較適宜。 參照圖24A以說明線加工之方法。對於基板] _射雷射，以開始加工。加工開始時’首先’藉矩 點93照射線1 03 —端之全寬幅上的領域。然後， 地照射雷射同時，令光束點移向線1 〇 3另一端地將 向平台向一方向予以移動。XY方向平台之移動方 行於矩形光束點93之某一邊。又’將基板上之光 動方向以箭頭顯示之。 當光束點到達線1 〇 3另一端時，即停止對基板 雷射光 ί刻t 2 射光束 機信號 。例如 /2設爲 獲得連 輸入契 照射於 轉印層 由於能 層上殘 2開始 形光束 連續性 XY方 向是平 束點移 之照射 -46- (43) 200408486 雷射而結束加工。如此，藉基板表面之線狀領域被照射 射予以加熱，而能在基底層表面形成以線狀殘留轉印層 線 1 〇 3。 所形成線1 〇 3之外形，則呈其較長方向之邊緣平行 光束點9 3之某一邊，其軸向邊緣平行於與光束點9 3某 緣呈正交之邊緣的矩形狀。線1 0 3之寬度，乃等於與光 點93某邊緣呈正交之邊長。 茲參照圖2 4 B，就點加工之方法加以說明。在點加 時，係對基板1 2間歇性地照射雷射光束同時，使XY 向平台移動於一方向。XY方向平台之移動方向是平行 矩形光束點94a之某一邊（稱爲邊p)。 首先，第一脈衝之照射雷射開始時，由矩形光束 9 4 a予以照射點1 〇 4 a —端之全寬幅上的領域。由於X γ 向平台在移動，致該第一脈衝之照射雷射結束爲止，光 點即在基板上移動。在此，以箭頭顯示光束點之移動方 〇 如此’以照射雷射加熱基板表面之點狀領域，在基 層表面形成以點狀殘留轉印層之點1 04 a。 以後同樣地，藉第二、三、四、五脈衝之照射雷射 別形成點 104b，104c,104d，104e。又，第二、三、四、 脈衝之照射開始時，光束點94b，94 c，94 d，94e分別照射 基板表面領域，則與將光束點9 4 a所照射基板表面領域 XY方向平台移動方向予以平行移動之領域一致。各點 排列於與XY方向平台移動方向呈平行之線上。 雷 之 於 邊 束 X 方 於 點 方 束 向 底 分 五 之 沿 乃 -47- (44) (44)200408486 各點外形，係呈具有與光束點94a之邊p平行的邊， 及與光束點94a之邊p正交的邊（稱爲邊q)平行之邊的矩 形狀。 各點之與X Y方向平台移動方向呈正交之邊長乃相等 於邊q之長度，例如邊q之長度爲2 0/i m時即呈2 0 " m c 各點之與X Y方向平台移動方向呈平彳了之邊長，則依 存於光束點之邊ρ長、X Υ方向平台之移動速度、脈衝之 照射時間（脈衝寬度）。 例如，假設光束點之邊ρ長爲1 2 /i m、X Υ方向平台 之移動速度爲8 0 0 m m / s、脈衝寬度爲1 〇 f s。由於在脈衝 寬度1 0 // s間，XY方向平台移動之距離（即基板移動距離 )爲8/^m，致與χγ方向平台移動方向呈平行的點之邊長 ’成爲光束點之邊ρ長12//m加上移動距離8//m的20 β m。 鄰接點間之間距d是一致於脈衝之一週期間移動的距 離。例如，脈衝之週期爲3 7 5 " s、X Y方向平台之移動速 度爲800mm/s時，間距d爲300//m。 糸示括以上’將光束點尺寸設定爲邊ρ長1 2 // m、邊ρ 長20/im，以脈衝寬度10//S、週期375/zs振盪雷射光束 ’且使XY方向平台以800mm/s移動時，能以300//m 間距形成2 0 // m角之點。 且’有時亦有欲在基板上加工具各相異方向之多數線 的情形。惟，如將基板上之光束點方向予以固定原樣以形 -48- (45) (45)200408486 成方向相異之線時，卻舍辨生 卻曾發生依存於線方向致線寬度變化 等之問題。 參照圖29 ’以說明如此狀況之一例。首先，藉參照 圖2 4 A所δ兌明之方法予以形成線】〇 9 &。接著，不改變光 束點之方向地予以形成具與線1〇9a呈相異方向之線i〇9b 。在照射雷射開始時’將光束點99照射於線】〇外一端。 且使χγ方向平台移動於線1〇9b之較長方向同時，令光 束點移動至線1 0 9 b其他一端，以形成線1 〇 9 b。 如圖不’線1 0 9 a之寬度雖與光束點9 9長邊之長度相 等’但線109b之寬度不一定與該長邊之長度相等。又， 無法將線1 0 9 b之端邊形成爲與線較長方向呈正交。藉使 用圖22 A所示遮罩旋轉機構6丨，而能回避此種問題。 圖25爲可保持具矩形貫通孔62之遮罩5的遮罩旋轉 機構6 1槪略顯示圖。矩形貫通孔62之兩條對角線所伸展 之面是垂直於雷射光束之光軸。遮罩旋轉機構6 1係以貫 通孔6 2之矩形對角線的交叉點爲中心，促使遮罩5旋轉 於與雷射光束光軸呈平行之軸周圍。 對應於遮罩5之旋轉，貫通孔62之像即在基板1 2表 面內旋轉。且可使基板上貫通孔之矩形像的邊與基板表面 內之任意方向呈平行。 如其次說明，爲改變所加工之線等的方向，可在改變 基板上之雷射光束射入位置的移動方向之前，由遮罩旋轉 機構6 1予以旋轉遮罩5。 參照圖26，以說明使用遮罩旋轉機構之線加工方法 -49- (46) (46)200408486 。藉參照圖24A所說明之方法予以形成線ι〇3^且假設 光束點9 j a長邊之長度與線丨〇 3 a之寬度相等，光束點 9 3 a短邊之方向與線丨〇 3 a之較長方法呈平行。 在開始加工具有與線103a相異方向的線i〇3b之前， 由遮罩旋轉機構旋轉遮罩，令光束點93b之短邊平行於線 之較長方向。且藉XY方向平台移動基板，促使光束 點照射線1 0 3 b —端之全寬幅上。 開始雷射光束之照射，由參照圖24A所說明之同樣 工’俾使X Y方向平台沿線1 〇 3 b之較長方向移動同時 ，加以形成線1 0 3 b。線1 0 3 b之寬度係與光束點9 3 b長邊 之長度相等。又’線103b之寬幅方向的邊與較長方向之 邊呈正交。 如此’乃能將各自具有不同方向之多數線形成爲呈相 同之寬度。又，爲將具相異方向之多數點不予改變大小、 形狀予以形成，亦可使用遮罩旋轉機構。 在此雖說明，由週期性契機信號控制分光光學系統， 將雷射光束加以脈衝化之例，惟契機信號非週期性亦無妨 。例如，欲以不等間距形成多數點時，可使用非週期性之 契機信號。又，雷射光束之脈衝寬度非一定亦可。對應所 形成點之尺寸等適當地設定就可。 藉改變基板上之光束點形狀或大小’則能調節線之寬 度或點之大小等。而藉更換遮罩可改變光束點之形狀或大 小。且，藉改變成像倍率（縮小率）亦能改變光束點之大小 -50- (47) (47)200408486 上述雖以基板表面殘留線狀或點狀之轉印層的加工爲 例加以說明，惟藉照射雷射在基板表面而掘鑿線狀或點狀 之加工亦可。 遮罩之貫通孔形狀並不限於矩形，對應欲形成之點或 線之形狀予以適當地選擇即可。 上述雖說明藉X γ方向平台移動基板上之雷射光束射 入位置的例，惟射入位置亦能由電磁掃描器搖擺雷射光束 之進行方向加以移動。 繼之，參照圖27A說明具有兩台雷射光源，其中一 台雷射光源射出脈衝雷射光束，另一台雷射光源射出連續 波雷射光束之第七實施例的雷射加工裝置。 雷射光源1 a爲例如含有波長變換單元之N d : Y A G雷 射振盪器，可射出N d : Y A G雷射之第四高次諧波（波長 2 6 6 n m )。脈衝寬度例如爲1 〇 n s。雷射光源1 a射出之脈衝 雷射光束乃射入於半波長板69a，被形成爲對於偏光板67 呈P波之線性偏振光。 雷射光源1 b爲例如半導體雷射振盪器，可射出波長 8 0 8 nm之連續波雷射光束。雷射光源lb射出之連續波雷 射光束則射入於半波長板69b，被形成爲對於偏光板67 呈S波之線性偏振光。 自半波長板69a射出之脈衝雷射光束，係通過將射束 直徑予以擴大設成平行光之擴張器3 a與具有例如矩形貫 通孔之掩膜5，而以射入角45°射入於偏光板67表面。 自半波長板69b射出之連續波雷射光束，則通過將射 -51 - (48) (48)200408486 束直徑予以擴大設成平行光之擴張器3 b，被回折鏡6 8予 以反射，而以射入角4 5 ^射入於偏光板6 7背面。 偏光板6 7使P波之脈衝雷射光束通過，令S波之連 續波雷射光束反射。而藉偏光板67，7¾能使自雷射光源 1 a射出之脈衝雷射光束與自雷射光源1 b射出之連續波雷 射光束重疊於同一光軸上。 通過偏光板6 7之脈衝雷射光束與被偏光板6 7反射之 連續波雷射光束，即在物鏡6被聚焦，通過電磁掃描器7 射入於基板1 2。 以基板1 2之保持台所使用之X Y方向平台8 a，能使 基板12移動於與基板12表面呈平行之二維平面內。藉控 制器1 1控制電磁掃描器7 ’而能在所盼之時序將基板1 2 移動至所盼的位置。 在此說明之雷射加工方法例’係將電磁掃描器7之X 方向用掃描器7a與Y方向用掃描益7b固疋於電磁掃描器 7射出之雷射光束可垂直射入於基板1 2的位置。且藉以 t XY方向平台8a移動基板12，而能使基板12之雷射光束 射入位置移動。 音圈機構9,1 0分別使遮罩5、物鏡6之位置，沿雷射 光源1 a所射出脈衝雷射光束之進行方向予以平行移動。 遮罩5之貫通孔的像，乃藉調節遮罩5及物鏡6之位置’ 以所盼之成像倍率（縮小率）予以成像於基板1 2表面。 參照圖2 7 B，就加工對象物之基板1 2說明之。基底 層1 2 0表面上形成有表層1 2 1。基底層1 2 0例如爲液晶顯 -52- (49) (49)200408486 示裝置之濾色片，是由聚醯亞胺系樹脂或丙烯酸系樹脂等 所成之厚度1 β m樹脂層。表層1 2 1爲例如厚度0.5 // m 之ITO膜。 藉照射雷射僅除去表層1 2 1時，由於基底層1 2 0比表 層1 2 1易於加工，致僅要加工表層1 2 1較爲困難。例如， 將雷射照射基板時，表層1 2 1未被直接加工，基底層1 2 0 即因該基底層1 2 0所傳達之熱影響而爆發性地飛散，以致 會發生隨其表層1 2 1被刮掉之情狀。 本發明人，則發覺藉預熱基板後再予以照顧雷射，可 使僅加工表層121變爲較容易。於是在圖27A所示雷射 加工裝置，由雷射光源1 b射出之連續波雷射光束預熱基 板後’再以雷射光源1 a射出之脈衝雷射光束進行孔穴等 之加工。 接著參照圖2 8 A〜2 8 C，以說明利用連續波雷射光束 對基板上之被加工點予以預熱後，再照射脈衝雷射光束予 以形成孔穴之方法一例。 如圖28A所示’被連續波雷射光束（以圓形光束點95 表示）所照射基板12表面係劃定有被加工點 105a，105b，105c°光束點95即位於連結被加工點1〇5&〜 l〇5c之直線上。且藉將χγ方向平台8a與該直線平行予 以移動’可使被加工點l05a〜 l〇5c移向光束點95。 如圖28B所示，當被加工點1〇5a到達光束點％端緣 時，連續波雷射光束乃照射被加工點丨〇5a開始供給預熱 -53- (50) 200408486 如圖2 8 C所示，被加工點1 〇 5 a到達光束點9 5中 ，對光束點9 5中心進行照射一射擊脈衝雷射。將脈 射之光束點以光束點9 6顯示。 被加工點1 〇5a則在自光束點95端緣移動至中心 被予以預熱。藉將脈衝雷射照射於被預熱之被加 1 〇 5 a，而能抑制基底層之被加工，在基板表層形成孔 繼續使基板1 2移動，與被加工點1 〇 5 a同樣，亦 加工點1 0 5 b，1 0 5 c予以形成孔穴。 預熱所用連續波雷射光束之照射條件’則是例如 束點設成直徑20mm之圓形狀，將基板表面之功率密 爲 0 . 1 W / cm2。加工所用脈衝雷射光束之照射條件’ 如將光束點設成直徑20 a m之正方形，將基板表面 衝能量密度設爲0.1〜0.4 J / cm2。 又，被加工點之預熱時間，卻略等於被加工點移 續波雷射光束之光束點半徑長分所需的時間。該時間 將光束點半徑設爲l〇mm、XY方向平台之移動速度 8 0 0mm / s時，約爲0.13秒。藉將脈衝雷射照射於連 雷射光束之光束點中心，而雖將XY方向平台之移動 予以多樣變化，亦能整齊預熱時間容易進行加工。 照射連續波雷射賦予基板表面之熱，由於會傳達 底層，致所賦予預熱過多時連基底層亦加工。因此， 之供給需要使基底層之溫度停留於避免基底層被加工 度以下。例如，需要使基底層之溫度停留於基底層原 之融點以下。 心時 衝雷 之間 工點 在被 將光 度設 是例 之脈 動連 ，如 δ又爲 續波 方向 至基 預熱 之溫 材料 -54- (51) (51)200408486 I τ 〇膜雖對可見光呈透明，惟對於例如波長8 0 8 n m近 紅外線之吸收系數並不是零。因此能將該波長光使用於 I TO膜之預熱。如使用比ITO膜之吸收系數更大之波長（ 例如1 064 nm附近之波長）光，乃能期待預熱之效率提升t 上述雖說明將脈衝雷射光束與連續波雷射光束重疊於 同一光軸上以照射基板之例子，惟兩雷射光束非在同一光 軸上亦無妨。促使連續波雷射光束之光束點內部含有脈衝 雷射光束之光束點，將兩雷射光束照射於基板，即能在被 加工點到達連續波雷射光束之光束點端緣後再到達脈衝雷 射光束之光束點位置之間，對被加工點供給預熱。 惟，爲賦予預熱，需使被加工點通過連續波雷射光束 之光束點內部後，再到達脈衝雷射光束之照射位置。因此 ，需使脈衝雷射光束之照射位置避免與被加工點接觸於連 續波雷射光束之光束點外周時分的該被加工點位置呈一致 〇 上述雖說明形成孔穴之例，然連續地形成多數孔穴， 予以形成溝槽亦可。 上述雖說明由XY方向平台移動基板上之雷射光束射 入位置的例，惟射入位置亦能藉電磁掃描器搖擺雷射光束 進行方向予以移動。 以上，雖沿著實施例說明本發明，但並非限定於該等 。例如，可作各種變更、改良、組合等，當然是同業者所 自明者。 (52) (52)200408486 【圖式簡單說明】 圖1爲可實行本發明第一實施例之雷射加工方法的雷 射加工裝置槪略圖。 圖2爲可貫彳了本發明第_•實施例β雷射加工方法的’_ 射加工裝置之雷射光束光路徑槪略顯示圖。 圖3 Α及圖3 Β爲由於雷射光束照射所加工之基板槪 略平面顯示圖。 圖4A爲遮罩之貫通孔一例示圖，圖4B爲圖4A所示 貫通孔在基板上成像時之基板所開鑿的孔穴槪略顯示圖。 圖5 A爲雷射光源所射出脈衝雷射光束剖面之每一脈 衝能量密度的槪略顯示曲線圖，圖5 B爲由圓錐光學系統 變換脈衝能量密度分佈之脈衝雷射光束剖面的每一脈衝能 量密度之槪略顯示曲線圖，圖5 C爲由具有圖5 B所示脈 衝能量密度分佈之脈衝雷射光束予以加工的孔穴槪略剖面 圖。 圖6爲可實行第一實施例之變形例的雷射加工方法之 雷射加工裝置槪略圖。 圖7爲光路徑調節機構槪略顯示圖。 圖8A及圖8B爲搬運機構槪略顯示圖。 圖9爲習知雷射割片裝置槪略圖。 圖1 〇 A及圖1 0B爲由習知雷射割片裝置予以加工之 基板槪略平面圖。 圖1 1爲由習知雷射割片裝置予以加工之基板槪略剖 面圖。 -56- (53) (53)200408486 圖1 2 A爲可實行第二實施例之雷射加工方法的雷射 加工裝置槪略圖，圖1 2 B爲可實行第二實施例之變形例的 雷射加工方法之雷射加工裝置槪略圖。 圖】3爲可實行本發明第二實施例之雷射加工方法的 雷射加工裝置之雷射光束光路徑槪略顯示圖。 圖1 4爲可實行第二實施例之變形例的雷射加工方法 之雷射加工裝置的雷射光束光路徑槪略顯示圖。 圖1 5 A爲可實行第三實施例之雷射加工方法的雷射 加工裝置槪略圖，圖1 5 B爲一次聚光鏡之其他構成例槪略 顯示圖。 圖1 6爲二次聚光鏡之構成例槪略顯示圖。 圖1 7爲可實行第四實施例之雷射加工方法的雷射加 工裝置槪略圖。 圖1 8 A爲將被孔徑傾斜機構加以旋轉之孔徑，自孔 徑傾斜機構之旋轉軸方向觀看的槪略圖，圖1 8 B爲將被孔 徑傾斜機構加以旋轉之孔徑，自雷射光束之光軸方向觀看 的槪略圖’圖1 8C爲將由孔徑傾斜機構及孔徑旋轉機構加 以旋轉之孔徑，自雷射光束之光軸方向觀看的槪略圖。 圖1 9爲可實行第五實施例之雷射加工方法的雷射加 工裝置槪略圖。 圖20爲利用近接遮罩之雷射加工方法的有關轉印精 度模擬結果之被投影貫通孔像的基板平面顯示圖。 圖2 1爲被以某轉印精度實行加工時，可滿足雷射光 束擴散角與近接間隙之關係的槪略曲線顯示圖。 -57- (54) (54)200408486 圖2 2 A爲可實行第六實施例之雷射加工方法的雷射 加工裝置槪略圖，圖2 2 B爲基板之槪略剖面圖。 圖2 3爲使用第六實施例之雷射加工方法進行雷射加 工時的契機信號及雷射光束之時序圖一例示。 圖24A爲形成線之基板槪略平面圖。圖24A爲形成 點之基板槪略平面圖。 圖2 5爲保持遮罩之遮罩旋轉機構槪略顯示圖。 圖2 6爲使用遮罩旋轉機構以形成線之基板槪略平面 圖。 圖2 7 A爲可實行第七實施例之雷射加工方法的雷射 加工裝置槪略圖，圖2 7 B爲基板之槪略剖面圖。 圖28A、圖28B及圖28C爲被加工點與光束點之位置 關係說明用的基板平面圖。 圖2 9爲未使用遮罩旋轉機構以形成線之基板槪略平 面圖。 主要元件對照表 1、1 a、1 b :雷射光源 2 :可調式衰減器 3、3 a :擴張器 4 =圓錐光學系統 4 a、4 b :圓錐透鏡 5 :遮罩 5 a :孔徑 -58- (55) (55)200408486 6 :物鏡 7 :電磁掃描器 7a: X方向用掃描器 7 b : Y方向用掃描器 8 . 保持台 8a : X Y方向平台 9、1 0 :音圈機構 1 1 :控制器 1 2 :基板 2 0 :光程調整機構 2 1&〜21(1:反射鏡 22 :移動部 3 〇 :薄膜 3 1 :搬運機構 3 2 :真空夾頭 3 3 :旋轉編碼器[(a + Δ2) / (b — Δ2)] 2: = (3 / b) 2 / COS0 · The laser beam at the position ’incident position changes. The position laser can reduce the attenuation of the incident angle energy of the laser beam 2 which is emitted from the controller beam into the base 2 and reduce the energy density at the same time. (2) • · (3) (20) 200408486 Set the angle Δ! And 42 corresponding to the incident angle 0 (the angle between the substrate 1 and the incident light) of the laser beam towards the substrate 12 and set it to 42 corresponding to the radiation moving mask. 5 and the objective lens 6, so that the optical path from the mask 5 to the objective lens 6 is maintained at a + Δ 2, and the length of the incident position on the objective lens 6 to the substrate 12 is maintained at b — Δ !. Here, a and b are respectively 0 is the light path length from the mask 5 to the objective lens 6 and the light path length from the objective lens 6 to the incidence position of the substrate 1. F is the focal length of the objective lens 6. The above formulas (2) and (3) are not strictly met. When the incident angle is changed, the beam magnification can be reduced to reduce the beam spot area to improve the laser processing quality. When it becomes larger, the imaging magnification (reduction rate) can be made smaller. Fig. 6 is a schematic view of a laser processing apparatus according to a first embodiment of an optical path adjustment mechanism 20 having an incident optical path length b on the substrate 12 from the variable objective lens 6 to the substrate 12. The voice coil mechanism 9 and 10 are removed from the laser shown in FIG. 1, and the structure of the optical path adjustment mechanism 20 added to the laser is the same as that of the laser processing apparatus shown in FIG. In the laser processing apparatus, the light path length a of the shield 5 to the objective lens 6 is a. The borrowing path adjustment mechanism 20 can, for example, synchronize with the electromagnetic scanning | moving operation. In the scanning of the laser beam, the optical path length b of the objective lens 6 to the entrance position of the substrate 1 2 is always kept constant. This allows the through-holes to be often formed on the substrate 12 at a predetermined imaging magnification (reduction rate) to add grooves as shown in FIG. 3B. FIG. 7 is a schematic view of the light path adjusting mechanism 20. The optical path structure 20 is composed of, for example, four mirrors 2 1 a to 2 1 d. The four mirrors respectively cause the direction of the incident laser beam to change, such as the normal angle of 902, the angle of incidence, the length of the optical path, and the length of the optical path. The other 6 are the shots on the top of Ding Rong 7 and the reflection on the mask 5 to adjust the reflections. And -24- (21) 200408486 the laser beam is emitted by the optical path adjustment mechanism 20 in a direction parallel to the direction of the incident laser beam. The reflecting mirrors 2 1 a and 2 1 b form two moving parts 22. The moving part 22 moves in the direction of the arrow in the figure. The optical path length b from the objective lens to the incident position on the substrate 12 can be adjusted by the 2 2 position of the moving portion. When the incident angle of the laser beam to the substrate 12 becomes larger, the moving part 22 moves upward in FIG. 7. By shortening the optical path length of the laser beam in the optical path adjustment mechanism, the optical path length b can be maintained. for sure. The movement of the moving part 22 may be performed by a signal from the controller 11. The controller 11 also causes the movement of the electromagnetic scanner 7 to synchronize with the movement of the moving unit 22, thereby keeping the optical path length b of the objective lens 6 shown in FIG. 6 to the incident position on the substrate 12 constant. In the laser processing apparatus shown in FIG. 6, although the light path adjusting mechanism is added to adjust the light path length b, the light path length a can be inserted between the mask 5 and the objective lens 6. By using two optical path adjustment structures 20, the optical path length a and the path length b can also be adjusted to satisfy the relational expression (1) in the scanning of the laser beam. In addition, as long as only one of the mask 5 and the objective lens 6 is moved to adjust the light path length a or the optical path length b, for example, the objective lens 6 may be fixed and only the mask 5 may be moved to meet Relationship (1). For the object to be processed, although it is considered to form an ITO substrate on a glass base material, a substrate having a polyimide film formed on a silicon substrate may be used to process the polyimide film portion. These can be used as solar cell substrates or crystal substrates. It is also possible to process a touch panel in which ITO is formed on a polyimide film, or process a semiconductor film. In addition, it is also possible to process the thin film with a light shape of 6 and a position of 20. 20 also machine light path film 光 liquid film shape -25- (22) (22) 200408486 processing object. FIG. 8A is a schematic view of a conveying mechanism 31 1 for conveying the film 30. The film 30 is transferred by the transfer mechanism 31. The vacuum chuck 3 2 fixes a predetermined processing position on the film 30 being transferred to delineate the processing surface, and the laser beam scanned by the electromagnetic scanner 7 is incident on the fixed chuck 32 The film 30 is processed at a predetermined processing position. When the processing at the predetermined processing position is completed, the conveying mechanism 31 removes the film 30 and fixes another processing position with the vacuum chuck 32 to perform processing. Conventionally, the film 30 fixed by the vacuum chuck 32 is moved in the XY direction stage, and processed by irradiating a beam using a fixed optical system. In this embodiment, since the beam is scanned by the electromagnetic scanner 7, and the beam is incident on the processing position for processing, the processing speed can be increased. FIG. 8B is a schematic view of a carrying mechanism 31 with a rotary encoder 33. The rotary encoder 3 3 can detect the speed of the film 30 carried by the carrying mechanism 31. The test result is sent to the controller 11 and the controller 11 determines the transport amount of the film 30 from the transport speed. The controller 11 sends control signals to the electromagnetic scanner 7 from the transport speed of the film 30 and the data of the predetermined processing position defined on the film 30. The electromagnetic scanner 7 receives the control signal to scan the laser beam, and irradiates the beam to a predetermined processing position on the film 30 for processing. Since an XY-direction stage is not required, processing can be performed along with the transport of the film 30, so that the processing speed can be increased. By using a laser processing device that removes the conical optical system 4, the mask 5, and the voice coil mechanism 9 from the laser processing device shown in FIG. 1, it is also possible to perform focus addition -26 · (23) (23) 200408486. The laser beam is focused by the objective lens 6 and imaged on the substrate 12. When the electromagnetic scanner 7 is activated, the laser beam scans the substrate 12 and the incident position of the beam on the substrate 12 changes, the objective lens 6 moves in a direction parallel to the direction of the beam passing through the objective lens 6, The voice coil mechanism 10 is caused to keep the optical path length b of the laser beam from the objective lens 6 to the substrate 12 constant. And by this movement, the laser beam is often imaged on the substrate 12. Thus, good quality processing can be achieved. Although a pulse laser beam is used in this embodiment, a continuous wave laser beam may be used in accordance with the processing. In addition, although a laser light source uses a Nd: YAG laser oscillator including a wavelength conversion unit, and emits three times higher harmonics of Nd: YAG lasers, the fundamental wave of a solid laser can also be used ~ five times higher Subharmonic. In addition, C02 lasers can also be used. Although the electromagnetic scanner is used as the high-speed scanning optical system in this embodiment, a high-speed scanning optical system using a polygon mirror may be used. Since the processing object is not moved by the X Y direction platform to change the incident position of the laser beam, the local beam scanning optical system is used to scan the laser beam to change the incident position of the laser beam, so the processing speed can be increased. In the above focus processing method, the laser beam is often imaged on the substrate surface. Next, the positional relationship between the focus of the laser beam and the substrate surface is adjusted in accordance with the incident position of the substrate surface of the laser beam, and a good quality processing method is explained. The laser processing apparatus of the second embodiment shown in FIG. 1A is obtained by removing the conical optical system 4, the mask 5, and the voice coil mechanism 9 from the laser processing apparatus shown in FIG. 1, and removing the adjustable attenuator 2 An aperture with a circular through-hole with adjustable beam diameter is arranged between the dilator 3 and the objective lens 6 -27- (24) 200408486. It is not necessary to image a through-hole with an aperture of 5 a on the surface of the substrate 12. By using the voice coil mechanism 10 to move the objective lens 6 in parallel in the direction of the beam passing through the objective lens 6, the focus of the laser beam is close to the base surface or is separated from the surface of the substrate 12 'to adjust the pulse energy density of the base laser beam. . Since the control signal sent by the controller 11 is electromagnetically scanned, the laser beam swings in the desired direction at the desired timing. The control signal sent by the transmitter 11 causes the voice coil mechanism 10 to operate synchronously with the electric 7 so that the laser beam can be irradiated to the substrate 12 at a pulse energy density corresponding to the incident position of the laser beam. An example of a processing method using the laser processing device of FIG. 12A will be described with reference to FIG. On the upper side of FIG. 13, the laser beam optical path on the substrate 12 scanned by the magnetically permeable scanner 7 is shown briefly. The laser beam Lib is incident on the substrate surface M 1 perpendicularly. The laser beams L 1 a and L 1 c are incident on Nla, Nlc at an incidence angle α 1, respectively. The injection position M1 is located at the midpoint of the line at the end of the injection position Nla. The lower side of Fig. 13 is a view showing the downward-looking surface from the electromagnetic scanner 7 side. Beam spot 91a, 9 lb. 91c shows the laser 3 Llb, Llc on the surface of the substrate (the point of incidence Nla5Ml, Nl). The laser beam progresses from the light of the laser beam Lla to the light path of the laser beam L 1 c. Ground, repeatedly irradiate the pulse 5a ^ and merge the laser light plate 12 the surface of the table 7 of the device 7 by the control, the magnetic scanner is expected to set the laser beam mirror 6, electric g 0 injection position Position, Nlc is the beam path of the two-viewed substrate beam L 1 a, c) swinging laser beam -28- (25) 200408486, as shown in Fig. 10 A and Fig. 10 B. The holes are continuously formed on the surface of the substrate to form a groove 1 0 1 ′. The position of the laser beam objective lens 6 that first irradiates the starting point of the formation of the groove 1 0 1 is set to make the laser beam 1] a image N 1 a. The point where the beam spot size is the smallest is called the thunder point. When the laser beam L mirror 6 at the end of the formation of the grooves 101 is irradiated, the position of the mirror 6 is set so that the laser beam L 1 c can be imaged. Due to the long optical path of the objective lens 6 to the entrance position Nla, Nlc, it can be considered that the position of the objective lens 6 is at the end of the groove processing development. Since the incident angles of the laser beams L 1 a and L 1 c are the same, the areas of the points 9 1 a and 9 1 c are the same. First, what kind of problem will occur when the objective lens 6 is fixed at this position and scanned as it is to form a groove. The objective lens 6 is fixed to an imaginary plane of the focal point of the laser beam 7 in which the laser beam L 1 a is imaged (or the laser beam L 1 c is imaged at the incident position N 1 c). Is the light-concentrating surface 8 1 a. The focal position of the point R light beam L 1 b on the condensing surface 8 1 a. The laser beams at the grooves 101 other than the incident positions N 1 a and N 1 c are incident on the substrate while focusing and being in focus. The longer the distance to the focal point, the larger the beam diameter at the incident position is than the focal diameter. The distance between the incident position and the focal point is the largest that is irradiated on the channel beam Lib. When L 1 a is formed at the shooting position, the focal position 1 C of the light beam at the incident position will be slightly the same as the incident position N 1 c, so it will be the same. When the laser beam enters the position N 1 a, the laser beam is displayed by the trajectory, and the laser beam is displayed. The laser beam at the center of the beam straight from the beam point is -29- (26) ( 26) 200408486 The pulse energy density of a laser beam is usually higher at the center of the beam profile than near the periphery. When the beam diameter becomes larger, the pulse energy density of each position in the beam profile 1] decreases. Therefore, although the beam diameter becomes larger, the area where the pulse energy density above the threshold of the substrate can be processed is limited to the vicinity of the center of the beam profile. The injection position N 1 of the end of the groove 1 〇 1 a. Near N 1 C, although the diameter of the beam irradiated with high pulse energy density is small, the pulse energy density reaches the beam profile, and the laser beam near the processing threshold is still near the periphery, and a groove with a relatively wide width is formed. In addition, near the incident position M 1 at the center of the beam profile, the laser beam irradiated with a low pulse energy density has a large beam diameter, but the pulse energy density is only in a narrow area of the center of the beam profile. A narrower trench is formed. In this way, the groove width varies depending on the position. The distance from the incident position M1 of the laser beam Lib to the point R on the light-condensing surface 81a is such that the incident angle α 1 becomes larger and longer. Therefore, the larger the incident angle α 1 is, the larger the difference between the diameter of the laser beam irradiated on the injection positions N 1 a and N 1 c and the diameter of the laser beam irradiated on the injection position M 1 is. That is, the width difference between the groove end and the center becomes more significant. The incident angle ^ 1 is the incident angle of the laser beam that forms the end of the trench, and it becomes large, for example, when a large substrate is formed with a long trench. Next, a method of forming a groove by moving the position of the objective lens 6 to adjust the focal position while performing laser beam scanning will be described. By adjusting the focal position of the laser beam, the beam diameter of the laser beam irradiated on the substrate is adjusted to adjust the pulse energy density on the substrate surface. -30- (27) (27) 200408486 Let us consider where the focus alignment of the laser beam L 1 b incident on the incident position M 1 is more appropriate. Setting the focal point closer to the incident position M 1 than the point R on the light-condensing surface 8 1 a can reduce the beam diameter 'and increase the pulse energy density of the incident position M 1 to correct it. However, when the focus is closer to the injection position M 1, the pulse energy density of the injection position M 1 becomes greater than the injection position N 1 a. The pulse energy density of N 1 c is high. And because the laser beam Lib is incident on the substrate surface vertically, the beam spot imaged at the incident position M 1 is circular. In addition, since the laser beams Lla; Llc are incident on the substrate surface obliquely at an incident angle α 1, the beam points 9 1 a, 9 1 c have a wide ellipse shape. That is, the pulse energy density of the laser beam L 1 b at the beam point 9 1 b when imaging at the incident position M 1 is higher than the pulse energy of the beam points 9 1 a and 9 1 c; the density and degree are local. Then, focus the laser beam L 1 b at a position slightly deeper than the incident position M 1 (farther from the incident position M 1 toward the inside of the substrate), so that the area of the beam spot 9 1 b is equal to the incident position N The area of the beam point 9 a of 1 a, 9 1 c. In this way, processing can be performed by irradiating the laser with the same pulse energy density as the injection positions N 1 a or N 1 c and M 1. At other incident positions on the groove 101, the area of the beam spot can also be maintained at a constant pulse energy density for processing. The focus track when scanning the groove 1 0 1 without changing the beam spot area is the light-condensing surface 8 1 b. And the focal position of the laser beam L 1 b is the point Q on the light-condensing surface 8 1 b. The following describes how to adjust the position of the objective lens 6 when the focal point is moved along the light-condensing surface 8 1 b. First, the objective lens 6 is set at a position where the laser beam L1 a • 31-(28) (28) 200408486 can be imaged at the incident position N 1 a. This position is referred to as the reference position c. When the laser beam is scanned from the incident position N 1 a to M 1, the objective lens 6 is gradually moved from the reference position to the laser light source, so that the focus edge is closer to the focusing surface 81 a When the light-condensing surface 81b on the substrate surface is moved, the area of the beam spot becomes large, and the decrease in pulse energy density can be suppressed. The moving distance of the objective lens 6 from the reference position is to set the laser beam L 1 a that is incident on the injection position N 1 a to zero. The laser beam L 1 b incident on the incident position M 1 is set to the maximum. Then, when the laser beam is scanned from the incident position M 1 to the incident position N 1 c, the objective lens 6 may be brought close to the reference position slowly. The distance between the objective lens 6 and the reference position decreases as the laser beam approaches the incident position N 1 c, and the laser beam L 1 c incident on the incident position N 1 c is set to zero. If so, by scanning the laser by adjusting the position of the objective lens 6 while moving the focal point of the laser beam entering each of the incident positions along the light-condensing surface 8 1 b, the wide width can be suppressed to form a groove 1 as the space changes. 0 1. The method of moving the grooves 101 is summarized. If the pulse energy density of the substrate surface is continuously reduced without moving the position of the objective lens 6, moving the objective lens 6 causes the focus of the laser beam to approach the incident position to suppress the decrease in the pulse energy density. If the pulse energy density of the substrate surface increases without continuing to scan the position of the objective lens 6, on the contrary, moving the objective lens 6 causes the focal position of the laser beam to move away from the incident position to suppress the increase in pulse energy density. Taking an example of processing, although the method of focusing at the injection positions at both ends of the groove to explain the focus on the substrate surface -32- (29) (29) 200408486 is described, it is also possible to align the focus at another injection position. As long as the beam spot of each incident position is kept at a certain area, the pulse energy density can be processed neatly, so the predetermined processability can be maintained for any incident position. Moreover, it is not necessary to keep the pulse energy density of the irradiated laser beam constant at each incident position, and to suppress the fluctuation of the pulse energy density of the incident position only when the incident position changes, and it is possible to perform a good processing. Although groove processing (cutting processing) is described as an example, it is also possible to perform digging and the like. Although the example in which the electromagnetic scanner is scanned in a one-dimensional direction is explained, it is also possible to scan the two-dimensional direction to comprehensively process the substrate. The processing using a pulsed laser beam will be described as an example, but the laser beam may be a continuous wave. When processing with a continuous wave laser beam, it is necessary to suppress the power density of the machined surface from varying with each incident position. The pulse energy density of the laser beam irradiated on the substrate can be adjusted by using an adjustable attenuator instead of the moving objective lens 6. The laser processing apparatus according to the modified example of the second embodiment shown in FIG. 12B is the one in which an adjustable attenuator 2 is added to the laser processing apparatus shown in FIG. 12A. The adjustable attenuator 2 is based on the control signal sent by the controller 11 and synchronized with the operation of the electromagnetic scanner 7 to attenuate the power of the pulsed laser beam radiated on the substrate 12 at the desired attenuation rate. An example of a laser processing method using an adjustable attenuator will be described with reference to FIGS. FIG. 14 is a schematic view showing the optical path of the laser beam on the scanning substrate 12 passing through the objective lens 6 and the electromagnetic scanner 7 in the laser processing apparatus shown in FIG. 12B. -33- (30) 200408486 The laser beam L 2 b is incident on the substrate surface M 2 vertically. The laser beams L 2 a and L 2 c are shot at N 2 a · N 2 c at an incident angle α 2, respectively. And the injection position M 2 is located at the midpoint of the line at the end of the injection position. The objective lens 6 is fixed to a position where the laser beam L2b can enter. An imaginary surface drawn by the focal point swung by the electromagnetic scanner 7 is set as a light-condensing surface 82. As described with reference to FIG. 13, the laser beam is oscillated from the laser beam L2a to the laser beam L2c, and the pulsed laser beam is irradiated to form a groove on the surface of the substrate. The distance at which the beam is imaged at the entrance position and then incident on the substrate becomes longer. As the passing beam becomes a scattered beam, the beam spot on the plate surface from the focal point to the incident position becomes larger. Moreover, as the injection position moves away from the injection position M2, the incidence angle of the substrate becomes larger. Although it is irradiated with the same beam diameter, as the incident angle becomes larger, the light on the surface of the substrate: As explained with reference to FIG. 13, the larger the beam point in-degree, the entire beam cross section is reduced, showing that it can process the substrate. Threshold near the center of the beam profile. Therefore, the groove width is narrower by the larger beam spot. When a groove is formed with a certain pulse energy at any incident position, the width near the center of the groove is made thinner than the formed width. Face injection position Enter injection position N2a. N2c is the imaging of the two positions M 2 towards the direction of the laser beam. Μ2, the longer the laser distance after the focal point of the laser light, the larger the laser beam beam point on the laser beam. The pulse energy density is above but only the irradiation laser formed by the irradiation is roughened. The end of the groove is -34- (31) (31) 200408486. Therefore, the pulse energy density on the surface of the substrate is promoted to be constant at any position. The power is adjusted by the adjustable attenuator 2 corresponding to the injection position. The amount of power attenuation is set to the minimum when machining the end of the groove, and increases as it goes toward the center of the groove, and is set to the maximum when the incident position M 2 of the center of the groove is irradiated. In this way, it is possible to prevent the width from varying depending on the space and form a trench. In addition, in order to make the pulse energy density of the laser beam irradiated on the substrate uniform, the focus position can be moved by the voice coil mechanism 10 moving the objective lens 6 and the adjustable laser attenuator 2 can be used to attenuate the pulse laser beam. use. The laser beam may be a continuous wave. When processing with a continuous wave laser beam, the power density of the machined surface can be suppressed from varying with each incident position, and the power of the continuous wave laser beam can be adjusted with an adjustable attenuator. On the other hand, processing of a glass base material having an ITO film formed on its surface, for example, tends to increase the size of the substrate. As the substrate becomes larger and the area to be processed becomes larger, that is, when the processing is performed by moving the objective lens 6 at a position corresponding to the laser beam incident position as described with reference to FIG. 3, the amount of movement of the objective lens 6 may increase. However, from the viewpoint of the ease of self-control, it is better to make the amount of movement of the objective lens 6 smaller. Next, referring to FIG. 15A, a laser processing apparatus of a third embodiment that suppresses the movement of the objective lens 6 to a short distance and can increase the moving distance of the focal position of the laser beam will be described. In the laser processing apparatus shown in Fig. 15A, a secondary condenser 71 is added between the objective lens 6 and the electromagnetic scanner 7 of the laser processing apparatus shown in Fig. 12A. In addition, in the description of FIG. 15A, the objective lens 6 is referred to as a primary condenser lens 6. -35- (32) (32) 200408486 The laser beam emitted from the aperture 5 a is incident on the primary condenser 6. The primary condenser 6 condenses the laser beam on the imaginary primary condenser surface 8 3. The laser beam passing through the primary condenser surface 83 is changed into a scattered beam and incident on the secondary condenser 71. The laser beam converged by the secondary condenser 71 is impinged on the substrate 12 by the electromagnetic scanner 7 in a swinging direction. Next, the amount of movement of the primary condenser 6 will be described. When the primary condenser 6 is brought close to the secondary condenser 71, the focal position of the laser beam converged by the secondary condenser 71 is moved in the direction of the laser beam. Set the moving distance of the primary condenser surface 8 3 to d 1 and the moving distance of the focal point of the laser beam to d 2. In addition, the number of apertures (holes) of the secondary condenser 71 with respect to the laser beam entering the secondary condenser 71 is set to NA2. When the magnification P is defined as P = ΝΑΙ / NA2, d 2 = d 1 xp 2 can be established. From the above, it can be known that increasing the magnification P means shortening the moving distance d 1 of the focusing surface 8 3 once, and also increasing the moving distance d 2 of the focal point. For example, when the magnification P is 2, if the primary condenser surface 83 approaches the secondary condenser 7 1 at 2 mm, the focal point of the laser beam can be moved 8 mm in the direction of the laser beam. The primary condenser surface 8 3 can be moved. It is performed by moving the primary condenser 6 in the direction of the optical axis. When the laser beam incident on the primary condenser 6 is a parallel beam, the moving distance of the primary condenser 6 and the moving distance of the primary condenser surface 83 are equal. If the movement distance of the primary condenser 6 is less than about 2mm -36- (33) (33) 200408486 ′, a direct-acting mechanism using a piezoelectric driving mechanism can be used. By replacing the voice coil mechanism 10 with a direct-acting mechanism using a piezoelectric drive mechanism, the condenser lens 6 can be moved once at a high speed with high accuracy. An example of a configuration of the secondary condenser 71 is shown in FIG. 16. The secondary condenser 71 is composed of a plurality of lenses. The object point S 0 and the image point S i are in a conjugate relationship. This object point S 0 corresponds to the position of the beam spot on the primary light-condensing surface 83 shown in Fig. 15A. The imaging optical system is assumed to be an infinity conjugate optical system. The secondary condenser 7 1 is divided into a front lens group 7 1 a and a rear lens group 7 1 b. The beam emitted from the object point S 0 is formed into a parallel beam by the front lens group 7 1 a. The rear lens group 7 1 b images the parallel beam at the image point S i. The secondary condenser 71 may not be physically divided, but it is assumed that the secondary condenser 71 can be divided. It is assumed that the focal distance before the front lens group 7 1 a is Ff 'and the focal distance after the rear lens group 7 1 b is Fr. At this time, the magnification P defined by the above formula can be expressed by P = F r / F f. Figure 1 5 A shows the laser processing device, although the primary condenser. 6 is constituted by a convex mirror, but as shown in FIG. 15B, it may be constituted by a concave mirror 6a. At this time, the primary light-condensing surface 83 becomes a double image, appearing closer to the laser light source side than the concave mirror 6a. If it is, by increasing the magnification P, the moving distance of the primary condenser lens 6 can be kept short, and the focal position of the laser beam irradiated on the substrate can be greatly changed. To play a promising effect, it is better to set the magnification P to 2 or more. -37- (34) (34) 200408486, it is more appropriate to set it to 4 or more. However, the beam points 9 1 a and 9 1 c shown in FIG. 13 are elliptical in shape because they are beam points of the laser beam that is projected obliquely on the substrate. In addition, 'beam point 9 1 b is the beam point of the laser beam incident perpendicularly to the substrate', so that the opening angle is different from the incident position of the laser beam, so the substrate i The beam spot shape will be different. The processed hole openings are oval if the beam spot is ellipse 'or round if they are circular. However, there are cases where it is desired to form the hole openings in the same shape (for example, circular) regardless of the position. Next, referring to Fig. 17, the laser processing apparatus of the fourth embodiment, which can correct the beam spot shape corresponding to the incident position, will be described. The laser processing device shown in FIG. 17 is an addition to the laser processing device shown in FIG. 12 in addition to an aperture tilting mechanism 60 a capable of rotating the aperture 5 a around an axis perpendicular to the optical axis of the laser beam, and the aperture 5 a aperture rotation mechanism 6 1 a rotating around an axis parallel to the optical axis of the laser beam. The aperture rotation mechanism 6 1 a is the same mechanism as the mask rotation mechanism for rotating the mask provided in the laser processing apparatus described later with reference to FIG. 2 A, and can rotate the aperture 5 a to the optical axis of the laser beam. Around the parallel axis. The aperture tilting mechanism 60a and the aperture rotating mechanism 6 1 a synchronize with the movement of the electromagnetic scanner 7 according to the control signals sent by the controller 1 1, respectively, while changing the aperture 5 a and the axis perpendicular to the optical axis of the laser beam. Inclination angle 'and the rotation angle around the axis parallel to the optical axis of the laser beam. Then, the cross-sectional shape of the beam on the substrate surface when the laser beam is incident obliquely on the substrate surface is compared with the cross-sectional shape of the beam perpendicular to the optical axis. The beam cross-sectional shape on the substrate surface -38- (35) (35) 200408486 is a shape in which the beam cross-sectional shape perpendicular to the optical axis is stretched along the direction of the intersection of the substrate surface and the incident surface. For example, when a laser beam with a circular cross-section is incident on the substrate surface obliquely, the beam cross-section on the substrate surface is an ellipse that is longer along the direction of the intersection of the substrate surface and the incident surface. The larger the incident angle, the longer the cross section of the beam on the substrate surface. Therefore, the cross section perpendicular to the optical axis is shaped into an elliptical laser beam with an appropriate long-axis to short-axis ratio, and the long-axis direction of the ellipse is perpendicularly incident to the incident surface and incident on the substrate surface obliquely Can make the beam spot on the substrate surface round. FIG. 18A is a schematic view showing an aperture 5a rotated around the axis perpendicular to the optical axis of the laser beam by the aperture tilting mechanism 60a and viewed from the direction of the rotation axis of the aperture tilting mechanism 60a. The laser beam 1 b incident from the left side of the figure is emitted from the right side of the figure after the aperture 5 a is shaped. As shown in FIG. 18B, the circular through hole with the aperture 5a rotated by the aperture tilting mechanism 60a looks oval when viewed along the line of sight of the optical axis of the laser beam. That is, the laser beam profile has been shaped into an oval shape. In addition, if the diameter of a circular through-hole with a diameter of 5 a is different from that of the two-dimensionally-extended surface, if the optical axis of the laser beam is orthogonal to the laser beam, the cross section of the laser beam is shaped into a circle. The aperture 5 a is gradually inclined, and as the angle formed by the rotation central axis of the circular through hole and the optical axis of the laser beam becomes larger, the short axis of the beam profile after shaping becomes shorter. If so, the aperture tilt mechanism 60a can change the aspect ratio of the beam profile after shaping. As shown in Fig. 18C, the aperture rotation mechanism 6 1 a is used to rotate the aperture 5 a -39 · (36) (36) 200408486 around an axis parallel to the optical axis of the laser beam. The cross-sectional shape of the laser beam with the smallest beam spot (called the focal point of the laser beam) is elliptical. The major axis direction of the beam cross section of the focal point is the minor axis direction of the beam cross section corresponding to the position of the through hole with the aperture 5 a. Therefore, the aperture axis rotation mechanism 6 1 a is used to rotate the aperture 5 a so that the long axis direction of the beam profile at the position of the through hole coincides with the cross-line direction. In this way, the shape of the beam spot on the substrate can be kept circular regardless of any position. Although it is not necessary to explain the concentrating process of imaging a through hole with an aperture of 5 a on the surface of the substrate, only the through hole is performed. When the image is processed by the mask projection method on the substrate surface, the beam spot shape on the substrate can also be corrected. In the mask projection method, the long-axis direction of the image of the through-hole formed on the substrate surface, that is, the long-axis direction of the beam cross section corresponding to the position of the through-hole of the mask. The beam axis is tilted around the vertical axis but the same. However, when the mask is rotated around the parallel axis of the laser beam optical axis, the elliptical minor axis direction of the beam cross section when exiting the through-hole is aligned with the direction of the intersection of the incident surface and the substrate surface and rotated. Although the case where the through-hole shape is circular will be described, the beam spot shape of a laser beam shaped by a through-hole of another shape can also be corrected. Next, a laser processing apparatus according to a fifth embodiment of a laser processing method using a proximity mask will be described with reference to Figs. The laser processing apparatus shown in FIG. 19 is a method in which a proximity mask 63 is added to the laser processing apparatus shown in FIG. 12. The proximity mask 63 is held by the proximity mask holding mechanism 64, and is disposed directly above the substrate 12 in parallel with the surface of the substrate 12. Proximity mask -40- (37) (37) 200408486 6 3 A through hole having the same shape as the shape to be processed on the substrate surface is formed. The distance (proximity gap) dg between the proximity mask 63 and the surface of the substrate 12 can be adjusted by the proximity mask holding mechanism 64. The expander 3 expands the beam diameter of the laser beam emitted from the laser light source 1, and emits a laser beam of parallel light. The laser beam emitted from the expander 3 has a diffusion angle A. When the beam diameter of the laser beam is expanded by, for example, 10 times with the expander 3, the diffusion angle yS is reduced to a factor of I0. The spreader 3 can adjust the diffusion angle of the laser beam. The electromagnetic scanner 7 scans the proximity mask 63 at the same time, and irradiates the laser beam. The laser beam is incident on the substrate 12 through the through hole of the proximity shield 63, and the substrate 12 is processed. The laser beam is not passed through the portion other than the through hole, and the substrate 12 is not processed. If so, the shape of the through-holes of the proximity mask 63 can be transferred and processed on the substrate surface. At this time, although the incident position of the laser beam changes, it is also possible to suppress the variation of the pulse energy density on the surface of the substrate, and move the position of the objective lens 6 corresponding to the incident position of the laser beam on the substrate to move the laser. The laser light source 1 may be a person that emits a continuous wave laser beam. In this case, it is necessary to suppress variations in power density on the surface of the substrate. In addition, in order to perform high-precision processing, it is necessary to accurately transfer the shape of the through-holes of the proximity mask 63 to the substrate. The accuracy of the transfer depends on the diffusion angle of the laser beam irradiated on the proximity gap d g and the proximity mask 63. The spread angle of the laser beam irradiated on the close mask can be assumed to be the same as the spread angle of the laser beam when passing through the expander / 3. In Fig. 20, a close mask with a T-shaped through-hole is used to show the simulation results of how the half-degree of transfer -41-(38) (38) 200408486 depends on the close gap and the diffusion angle of the laser beam. It also displays the T-shaped through-hole image 9 7 of the sun-shaped gap and the diffusion angle of the laser beam in various changes. In each drawing, the more the laser beam is arranged on the right side, the smaller the diffusion angle of the laser beam, and the lower it is, the closer the gap is. The clearer the edges like 9 7 the better the transfer accuracy. As can be seen from the figure, the transfer accuracy becomes worse as the proximity gap becomes larger at the same diffusion angle. Also, at the same proximity gap, the larger the diffusion angle, the worse the transfer accuracy. The smaller the proximity gap and the divergence angle, the better the transfer accuracy. Fig. 21 shows the relationship between the proximity gap and the diffusion angle of the laser beam when the transfer accuracy is to be ensured. To ensure the accuracy of a certain transfer, if the proximity gap is large, it is necessary to set the diffusion angle to be small. For various transfer accuracy, if the relationship between the proximity gap and the diffusion angle of the laser beam as shown in Figure 21 is obtained in advance, the proximity gap can be easily selected when processing is performed with the desired transfer accuracy With diffusion angle. The laser processing method using the proximity mask has the advantages of setting the proximity gap and the diffusion angle to be small, and processing with high transfer accuracy. In addition, by arranging the through hole of the close mask directly above the processing position of the substrate for processing, high positioning accuracy can be obtained. Except for the location to be processed ’Since the surface of the substrate is covered with a close mask, there is an advantage that scattered materials generated by cutting the substrate during processing are not easily attached to the surface of the substrate. In the process of irradiating the substrate with a laser beam passing through the through hole of the close mask, the laser beam is moved to the substrate's incident position. -42- (39) (39) 200408486 by an electromagnetic scanner By swaying the direction of the laser beam, it is possible to achieve higher processing speed than when moving the XY direction stage of the loading substrate to move the incident position. Next, a laser processing apparatus according to a sixth embodiment having a laser light source capable of oscillating a continuous wave laser beam will be described with reference to Fig. 22A. As the laser light source 1 capable of oscillating a continuous wave laser beam, for example, a semiconductor laser capable of oscillating a continuous wave laser beam can be used. The laser beam IbO emitted from the laser light source 1 is incident on the spectroscopic optical system 65. The spectroscopic optical system 65 divides the laser beam 1 b 0 into a laser beam 1 b 1 along a certain optical axis at a certain time, and allocates it as a laser beam lb 2 along the other optical axis in other time zones. The spectroscopic optical system 65 is composed of a half-wavelength plate 65a, a photovoltaic element 6 5 b showing a Pockel effect, and a polarizing plate 6 5 c. The half-wavelength plate 6 5 a sets the laser beam IbO emitted from the laser light source 1 to be linearly polarized light of P wave to the polarizing plate 65c. The P wave is incident on the photovoltaic element 6 5 b. The photoelectric element 65b rotates the polarization axis of the laser beam according to the opportunity signal sig sent by the controller 11. When the photovoltaic element 6 5 b is in a state where no voltage is applied, the incident P wave is emitted as it is. When the photovoltaic element 65b is under a voltage application state, the photovoltaic element 65b rotates the polarization plane of the P wave by 90 degrees. Thereby, the laser beam emitted from the photoelectric element 6 5 b becomes an S-wave to the polarizing plate 6 5 c. The polarizing plate 6 5 c transmits the P wave as it is, and reflects the S wave. The laser beam 1 b 1 of the S wave reflected on the polarizing plate 6 5 c is incident on a beam damper 66 which becomes the end of the laser beam lbl. The laser beam 1 b2 of P wave -43 · (40) (40) 200408486 transmitted through the polarizing plate 65c is incident on the expander 3. The beam diameter is enlarged by the expander 3, and a laser beam 1 b 2 formed as parallel light is incident on a mask 5 having a rectangular through-hole. Here, a description will be given by taking a mask projection method as an example. That is, the through holes of the mask 5 are imaged on the surface of the substrate 12 and processed. The mask rotation mechanism 61 is used to cause the mask 5 to rotate around an axis parallel to the optical axis of the laser beam. The mask rotation mechanism 61 includes, for example, a goniometer, and rotates the mask at a desired timing according to a control signal sent from the controller 11. The mask rotation mechanism 61 will be described in detail later. The voice coil mechanism 9 moves the position of the mask 5 in parallel along the direction of the laser beam. The laser beam 1 b2 emitted from the mask 5 is focused by the objective lens 6. The voice coil mechanism 10 moves the position of the mask 5 in parallel in the direction of the laser beam. The laser beam emitted from the objective lens 6 passes through the electromagnetic scanner 7 and is incident on the surface of the substrate 12. The substrate 12 to be processed will be described with reference to FIG. 22B. A transfer layer 1 1 1 is present on the surface of the base layer 1 1 0. The transfer layer 1 1 1 has a property of being adhered to the surface of the base layer 1 10 by being heated. For example, a part 1 1 1 a of the transfer layer 1 1 1 is bonded to the base layer U 0 by irradiating a laser. When the unheated portion 111b in the transfer layer 11 is removed, only the heated portion 111a remains on the surface of the base layer 110. This is similar to the case where the heated portion of the ink ribbon is transferred to the paper during thermal transfer printing. Returning to FIG. 22A, the explanation is continued. The XY-direction stage 8a is used as a holding table for the base -44- (41) (41) 200408486 plate 12. The XY-direction stage 8a can move the substrate 12 in a two-dimensional plane parallel to the surface of the substrate 12. And by the controller Π controlling the X Y direction stage 8a, the substrate 12 can be moved to the desired position at the desired timing. An example of the laser processing method described here is that the X-direction scanner 7 a and the Y-direction scanner 7 b of the electromagnetic scanner 7 are fixed so that the laser beam emitted from the electromagnetic scanner 7 can be vertically incident on the substrate. 1 2 position. By moving the substrate 12 in the XY direction stage 8a, the laser beam can be moved to the incident position of the substrate 12. Using the voice coil mechanism 9, 10, the light path length of the mask 5 to the objective lens 6 and the light path length of the laser beam incident position of the objective lens 6 to the substrate 12 can be set to; the through hole of the mask 5 can be set The image is formed on the surface of the substrate 12 at the desired imaging magnification. A control method of the spectroscopic optical system will be described with reference to FIG. 23. FIG. 23 is an example of an opportunity signal s i g and a laser beam 1 b 0, 1 b 1, 1 b 2. At time t 0, the laser beam 1 b 0 starts to be emitted. From time t 0 to time t 1, the controller does not send the opportunity signal si g. During this period, no voltage is applied to the photoelectric element, and the laser beam 1 b 2 is always emitted by the spectroscopic optical system. The laser beam 1 b 1 is not emitted. The laser beam lb2 here is a continuous wave. From time t 1 to time t 2, the signal sig, which is an opportunity to synchronize and periodically sent by the controller, applies a voltage to the photoelectric element of the spectroscopic optical system. While the opportunity signal sig is being sent out, the optoelectronic element is in a voltage-applied state, and the laser beam 1 b0 is allocated as the laser beam 1 b 1. In addition, during the period of -45-(42) 200408486 opportunity signal s i g, the photovoltaic element was in a state of no voltage application, and the beam 1 b 0 was allocated as the laser beam 1 b 2. Therefore, the laser beam lb2 at time t 1 to date becomes the periodically oscillated and stopped laser c. The laser beam 1 b 2 emitted intermittently can be adjusted by the sig to adjust the pulse width w 1 and the period w 2 The length is set to an arbitrary length, the pulse width w 1 is set to 1 〇es to the number 1 〇, and the period ν is set to 100 A s. If so, the laser beam 1 b2 that can be emitted continuously when the spectroscopic optical system is not input with the opportunity signal, and the laser beam 1 b2 that is emitted intermittently can be obtained when the spectroscopic optical system is intermittently chirped. In addition, since the laser beam 1 b2 emitted continuously can be continuous to the substrate, it is suitable for, for example, a process for forming a line (a process in which a linear shape remains on the base layer). In addition, the intermittently emitted laser beams 1 b2 are intermittently irradiated to the substrate, and are suitable for, for example, processing for forming dots (processing for transferring dot-like layers on a base). A method of wire processing will be described with reference to FIG. 24A. For the substrate] _Laser to start processing. At the start of processing, "first" irradiates the area on the full width of the line 1 03 by the moment point 93. Then, while the ground is irradiating the laser, moving the beam spot toward the other end of the line 103 will move the platform in one direction. The movement of the XY-direction stage is on one side of the rectangular beam spot 93. Also, the direction of light movement on the substrate is indicated by an arrow. When the beam point reaches the other end of the line 103, the laser light on the substrate is stopped, and the laser beam signal of t2 is stopped. For example, / 2 is set to obtain a continuous input laser irradiation on the transfer layer. Due to the residual layer 2 on the layer, the beam is continuous. The XY direction is a flat beam shift. -46- (43) 200408486 Laser to end processing. In this way, by irradiating and heating the linear area on the substrate surface, a linear residual transfer layer line 103 can be formed on the surface of the base layer. The formed shape of the line 103 is parallel to one side of the light beam point 93 in the longer direction, and the axial edge is parallel to a rectangular shape perpendicular to the edge of the light beam point 93. The width of the line 103 is equal to the length of a side orthogonal to an edge of the light spot 93. The method of point processing will be described with reference to Fig. 2 4B. When the point is added, the substrate 12 is irradiated with the laser beam intermittently, and at the same time, XY is moved to the platform in one direction. The moving direction of the XY direction platform is one side (referred to as side p) of the parallel rectangular beam spot 94a. First, at the beginning of the first pulse of irradiating laser, a rectangular light beam 9 4 a irradiates the area on the full width of the point 1 0 4 a -end. Since X γ is moving toward the platform, the light spot moves on the substrate until the laser pulse of the first pulse ends. Here, the movement of the beam spot is indicated by arrows. In this way, a spot-shaped area on the surface of the substrate is heated by laser irradiation, and a spot 10 04a of a dot-shaped residual transfer layer is formed on the surface of the substrate. In the same way, the points 104b, 104c, 104d, and 104e are formed by irradiating the laser with the second, third, fourth, and fifth pulses. In addition, when the second, third, fourth, and pulse irradiations are started, the beam spots 94b, 94c, 94d, and 94e irradiate the substrate surface area, respectively, and the platform moves in the XY direction of the substrate surface area irradiated with the beam spot 9 4a. The areas to be moved in parallel are consistent. The points are arranged on a line parallel to the moving direction of the platform in the XY direction. Lei Zhi's edge beam X square at the point square beam to the bottom of the five points is -47- (44) (44) 200408486 The shape of each point is a side parallel to the side p of the beam point 94a, and the beam point A rectangular shape in which the sides p of 94a are orthogonal to each other (referred to as side q) and the sides are parallel. The length of the side of each point that is orthogonal to the moving direction of the platform in the XY direction is equal to the length of the side q. For example, when the length of the side q is 2 0 / im, it is 2 0 " mc The length of the flat side is dependent on the length of the side ρ of the beam spot, the moving speed of the platform in the X Υ direction, and the pulse irradiation time (pulse width). For example, suppose that the length of the edge ρ of the beam spot is 1 2 / i m, the moving speed of the platform in the X Υ direction is 800 m m / s, and the pulse width is 10 f s. As the pulse width 1 0 // s, the distance of the platform movement in the XY direction (that is, the substrate movement distance) is 8 / ^ m, so that the side length of a point parallel to the platform movement direction in the χγ direction is the side of the beam spot ρ Length 12 // m plus 20 β m of travel distance 8 // m. The distance d between adjacent points is a distance consistent with the movement during one cycle of the pulse. For example, when the period of the pulse is 3 7 5 " s, the moving speed of the platform in the X Y direction is 800 mm / s, and the pitch d is 300 // m.糸 Include the above 'Set the beam spot size to 1 2 // m side length, 20 / im side ρ length, and oscillate the laser beam with a pulse width of 10 // S and a period of 375 / zs' and set the XY direction stage to When moving at 800mm / s, it can form a point with an angle of 2 0 // m at a pitch of 300 // m. In addition, there are cases where a plurality of lines in different directions of the tool are added to the substrate. However, if the direction of the beam spot on the substrate is fixed as it is -48- (45) (45) 200408486 to form lines with different directions, it will be discriminated but the line width changes depending on the line direction. problem. An example of such a situation will be described with reference to FIG. 29 '. First, a line is formed by referring to the method of δ-delta as shown in FIG. Next, a line i09b having a direction different from the line 109a is formed without changing the direction of the beam spot. At the start of the irradiation laser, the beam spot 99 is irradiated to the line]. And while moving the platform in the χγ direction to the longer direction of the line 10b, the beam spot is moved to the other end of the line 10b to form the line 10b. As shown in the figure, although the width of the line 10 9 a is equal to the length of the long side of the beam spot 99, the width of the line 109 b is not necessarily equal to the length of the long side. In addition, the end of the line 10 9 b cannot be formed to be orthogonal to the longer direction of the line. Such a problem can be avoided by using the mask rotation mechanism 6 丨 shown in FIG. 22A. Fig. 25 is a schematic view showing a mask rotation mechanism 61 that can hold the mask 5 having a rectangular through hole 62. The two diagonal lines of the rectangular through hole 62 extend perpendicular to the optical axis of the laser beam. The mask rotation mechanism 61 is centered on the intersection of the rectangular diagonal lines through the through hole 62, and causes the mask 5 to rotate around an axis parallel to the optical axis of the laser beam. In accordance with the rotation of the mask 5, the image of the through-hole 62 is rotated within the surface of the substrate 12. The sides of the rectangular image of the through-holes on the substrate can be made parallel to any direction in the surface of the substrate. As described next, in order to change the direction of the processed line or the like, the mask 5 may be rotated by the mask rotation mechanism 61 before changing the moving direction of the laser beam incident position on the substrate. Referring to Fig. 26, a method for processing a wire using a mask rotation mechanism -49- (46) (46) 200408486 will be described. The line ι〇3 ^ is formed by the method described with reference to FIG. 24A and it is assumed that the length of the long side of the beam point 9 ja is equal to the width of the line 丨 03 a, and the direction of the short side of the beam point 9 3 a and the line 丨 03 a The longer methods are parallel. Before starting the processing of the line i03b having a direction different from the line 103a, the mask is rotated by the mask rotation mechanism so that the short side of the beam spot 93b is parallel to the longer direction of the line. And the substrate is moved by the XY direction platform, so that the beam spot is irradiated on the full width of the end 1003b. Begin irradiation of the laser beam, and move the X Y direction platform along the longer direction of the line 103b by the same method described with reference to Fig. 24A to form a line 103b. The width of the line 1 0 3 b is equal to the length of the long side of the beam spot 9 3 b. The side of the line 103b in the width direction is orthogonal to the side in the longer direction. In this way, a plurality of lines each having a different direction can be formed to have the same width. In order to form a plurality of points having different directions without changing the size or shape, a mask rotation mechanism may be used. Although it is explained here that the spectroscopic optical system is controlled by the periodic opportunity signal, and the laser beam is pulsed, the non-periodic signal may be used. For example, if you want to form a large number of points at unequal intervals, you can use a non-periodic opportunity signal. Moreover, the pulse width of the laser beam may not be fixed. It is sufficient to appropriately set the size and the like of the formed dots. By changing the shape or size of the beam spot on the substrate, the width of the line or the size of the spot can be adjusted. By changing the mask, the shape or size of the beam spot can be changed. In addition, the size of the beam spot can also be changed by changing the imaging magnification (reduction rate). It is also possible to dig lines or dots by irradiating a laser on the surface of the substrate. The shape of the through hole of the mask is not limited to a rectangle, and the shape of the point or line to be formed may be appropriately selected. Although the above description is an example of moving the incident position of the laser beam on the substrate by the X γ direction stage, the incident position can also be moved by the electromagnetic scanner's swinging direction of the laser beam. Next, a seventh embodiment of a laser processing apparatus having two laser light sources, one of which emits a pulsed laser beam and the other laser source which emits a continuous wave laser beam, will be described with reference to FIG. 27A. The laser light source 1 a is, for example, an N d: Y A G laser oscillator including a wavelength conversion unit, and can emit a fourth higher harmonic wave (wavelength 266 nm) of the N d: Y A G laser. The pulse width is, for example, 10 n s. Pulses emitted by the laser light source 1 a The laser beam is incident on the half-wavelength plate 69 a and is formed as linearly polarized light having a P wave to the polarizing plate 67. The laser light source 1 b is, for example, a semiconductor laser oscillator, and can emit a continuous wave laser beam with a wavelength of 808 nm. The continuous wave laser beam emitted from the laser light source lb is incident on the half-wavelength plate 69b, and is formed as linearly polarized light having an S wave to the polarizing plate 67. The pulsed laser beam emitted from the half-wavelength plate 69a is expanded by setting the beam diameter to a parallel light expander 3a and a mask 5 having, for example, a rectangular through hole, and is incident at an angle of 45 ° The surface of the polarizing plate 67. The continuous-wave laser beam emitted from the half-wavelength plate 69b is enlarged by setting the beam diameter of -51-(48) (48) 200408486 into a parallel light expander 3 b, which is reflected by a folding mirror 68. It is incident on the back of the polarizing plate 6 7 at an incident angle of 4 5 ^. The polarizing plate 67 passes the pulsed laser beam of the P wave and reflects the continuous laser beam of the S wave. With the polarizing plates 67, 7¾, the pulsed laser beam emitted from the laser light source 1a and the continuous wave laser beam emitted from the laser light source 1b can overlap on the same optical axis. The pulsed laser beam passing through the polarizing plate 67 and the continuous wave laser beam reflected by the polarizing plate 67 are focused on the objective lens 6 and incident on the substrate 12 through the electromagnetic scanner 7. The X Y direction stage 8 a used for the holding table of the substrate 12 can move the substrate 12 in a two-dimensional plane parallel to the surface of the substrate 12. The controller 11 controls the electromagnetic scanner 7 'to move the substrate 1 2 to a desired position at a desired timing. An example of the laser processing method described here is that the X-direction scanner 7a and the Y-direction scanner 7b of the electromagnetic scanner 7 are fixed to the laser beam emitted from the electromagnetic scanner 7 and can be incident on the substrate 1 2 s position. By moving the substrate 12 by the stage 8a in the t XY direction, the incident position of the laser beam of the substrate 12 can be moved. The voice coil mechanisms 9, 10 respectively move the positions of the mask 5 and the objective lens 6 in parallel along the traveling direction of the pulsed laser beam emitted by the laser light source 1a. The image of the through hole of the mask 5 is formed on the surface of the substrate 12 at the desired imaging magnification (reduction rate) by adjusting the positions of the mask 5 and the objective lens 6 '. The substrate 12 to be processed will be described with reference to FIG. 2B. A surface layer 1 2 1 is formed on the surface of the base layer 1 2 0. The base layer 1 2 0 is, for example, a color filter for a liquid crystal display -52- (49) (49) 200408486 display device, which is a 1 β m resin layer made of polyimide resin or acrylic resin. The surface layer 1 2 1 is, for example, a thickness of 0. 5 // m ITO film. When only the surface layer 1 2 1 is removed by irradiating laser, since the base layer 1 2 0 is easier to process than the surface layer 1 2 1, it is more difficult to process only the surface layer 1 2 1. For example, when the laser is irradiated to the substrate, the surface layer 1 2 1 is not directly processed, and the base layer 1 2 0 is explosively scattered due to the thermal influence transmitted by the base layer 1 2 0, so that it will occur with the surface layer 1 2 1 the condition of being shaved off. The inventors have found that it is easier to process only the surface layer 121 by pre-heating the substrate and then taking care of the laser. Therefore, in the laser processing apparatus shown in Fig. 27A, after the substrate is preheated by the continuous wave laser beam emitted from the laser light source 1b, the pulse laser beam emitted from the laser light source 1a is used to process the holes and the like. Next, referring to Figs. 2A to 2C, an example of a method in which a continuous-wave laser beam is used to preheat a processed point on a substrate, and then a pulse laser beam is irradiated to form a cavity. As shown in FIG. 28A, the surface of the substrate 12 illuminated by the continuous wave laser beam (represented by a circular beam point 95) is defined with a processing point 105a, 105b, and 105c °. The beam point 95 is located at the connection processing point 1 5 & ~ 105c on a straight line. Moreover, by moving the χγ direction stage 8a parallel to the straight line ', the processed points 105a to 105c can be moved to the beam point 95. As shown in FIG. 28B, when the processed point 105a reaches the end of the beam point%, a continuous wave laser beam illuminates the processed point. 5a starts to supply preheating -53- (50) 200408486 as shown in Figure 2 8 C As shown, the processed point 105a reaches the beam spot 95, and a shot pulse laser is irradiated to the center of the beam spot 95. The pulsed beam spot is displayed as beam spot 9 6. The processed point 105a moves to the center from the end edge of the beam point 95 and is preheated. By irradiating a pulsed laser to the pre-heated substrate, the substrate can be prevented from being processed. By forming holes in the substrate surface layer, the substrate 12 can continue to move, which is the same as the processing point 105a. The processing points 1 0 5 b and 10 5 c form holes. The irradiation condition of the continuous wave laser beam used for the preheating is, for example, that the beam spot is set in a circular shape with a diameter of 20 mm, and the power density on the surface of the substrate is 0. 1 W / cm2. Irradiation conditions of the pulsed laser beam used for processing ’If the beam spot is set to a square with a diameter of 20 a m, the surface energy density of the substrate is set to 0. 1 ~ 0. 4 J / cm2. In addition, the preheating time of the processed point is slightly equal to the time required for the long point of the beam point radius of the continuous wave laser beam of the processed point. At this time, the beam spot radius is set to 10 mm, and the movement speed of the XY direction stage is 800 mm / s, which is about 0. 13 seconds. The pulse laser is irradiated to the center of the beam spot of the laser beam, and although the movement of the stage in the XY direction is variously changed, the preheating time can be neatly processed easily. The heat imparted to the surface of the substrate by the continuous wave laser is transmitted to the bottom layer, so that even if the preheat is given too much, the base layer is also processed. Therefore, the supply needs to keep the temperature of the base layer below the degree of preventing the base layer from being processed. For example, it is necessary to keep the temperature of the base layer below the original melting point of the base layer. The working point between the heart and the lightning is set as an example of the pulsation. For example, δ is the temperature of the continuous wave to the base preheating temperature material. -54- (51) (51) 200408486 I τ 〇 Although the film is visible light It is transparent, but its absorption coefficient is not zero for near-infrared rays with a wavelength of 808 nm, for example. Therefore, this wavelength of light can be used for preheating the I TO film. If light with a wavelength greater than the absorption coefficient of the ITO film (for example, a wavelength near 1 064 nm) is used, the efficiency of preheating can be expected to increase. T Although the above description shows that the pulsed laser beam and the continuous wave laser beam are overlapped on the same light Take the example of irradiating the substrate on the axis, but the two laser beams are not on the same optical axis. Prompt the beam point of the continuous wave laser beam to contain the beam point of the pulsed laser beam, and irradiate the two laser beams to the substrate, that is, the processed point can reach the pulsed laser beam after reaching the edge of the beam point of the continuous wave laser beam. Preheating is provided to the processed point between the beam spot positions of the beam. However, in order to provide preheating, it is necessary to pass the processed point through the inside of the beam spot of the continuous wave laser beam, and then reach the irradiation position of the pulse laser beam. Therefore, it is necessary to avoid that the irradiation position of the pulsed laser beam is consistent with the position of the processed point when the processed point is in contact with the outer periphery of the beam point of the continuous wave laser beam. Although the above example describes the formation of the cavity, it is continuously formed. Most holes can be grooved. Although the above describes the example where the laser beam incident position on the substrate is moved by the XY direction stage, the incident position can also be moved by the electromagnetic scanner to swing the laser beam in the direction. Although the present invention has been described along the embodiments, it is not limited to these. For example, it is possible to make various changes, improvements, combinations, etc., of course, it is obvious to those skilled in the art. (52) (52) 200408486 [Brief description of the drawings] FIG. 1 is a schematic diagram of a laser processing apparatus capable of implementing the laser processing method of the first embodiment of the present invention. FIG. 2 is a schematic view showing a laser beam optical path of a laser processing device capable of performing the β laser processing method of the _ • embodiment of the present invention. 3A and 3B are schematic plan views of a substrate processed by laser beam irradiation. FIG. 4A is an illustration of an example of a through hole of a mask, and FIG. 4B is a schematic view of a hole cut out by the substrate when the through hole shown in FIG. Fig. 5 A is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted by the laser light source, and Fig. 5 B is each pulse of the pulse laser beam profile of the pulse energy density profile transformed by the conical optical system. A schematic diagram of the energy density is shown. FIG. 5C is a schematic sectional view of a hole processed by a pulsed laser beam having a pulse energy density distribution shown in FIG. 5B. Fig. 6 is a schematic view of a laser processing apparatus capable of implementing a laser processing method according to a modification of the first embodiment. FIG. 7 is a schematic display diagram of a light path adjustment mechanism. 8A and 8B are schematic diagrams showing a transport mechanism. FIG. 9 is a schematic view of a conventional laser cutting device. 10A and 10B are schematic plan views of a substrate processed by a conventional laser cutting device. FIG. 11 is a schematic cross-sectional view of a substrate processed by a conventional laser cutting device. -56- (53) (53) 200408486 Figure 1 2A is a schematic diagram of a laser processing apparatus capable of implementing the laser processing method of the second embodiment, and Figure 1 2B is a laser capable of implementing a modified example of the second embodiment. The outline of the laser processing device of the laser processing method. Fig. 3 is a schematic view showing a laser beam optical path of a laser processing apparatus capable of performing a laser processing method according to a second embodiment of the present invention. Fig. 14 is a schematic view showing a laser beam light path of a laser processing apparatus capable of implementing a laser processing method according to a modification of the second embodiment. FIG. 15A is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the third embodiment, and FIG. 15B is a schematic view of another configuration example of a primary condenser. FIG. 16 is a schematic view showing a configuration example of a secondary condenser lens. Fig. 17 is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the fourth embodiment. Figure 18 A is a schematic view of the aperture rotated by the aperture tilt mechanism, viewed from the rotation axis direction of the aperture tilt mechanism, and Figure 18 B is the aperture rotated by the aperture tilt mechanism, and the optical axis of the laser beam Schematic diagram when viewed from the direction 'FIG. 18C is a schematic diagram when the aperture rotated by the aperture tilt mechanism and the aperture rotation mechanism is viewed from the direction of the optical axis of the laser beam. Fig. 19 is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the fifth embodiment. Fig. 20 is a plan view of a substrate on which a through-hole image is projected on a simulation result of transfer accuracy using a laser processing method of a proximity mask. Fig. 21 is a schematic diagram showing the relationship between the laser beam diffusion angle and the close gap when processing is performed with a certain transfer accuracy. -57- (54) (54) 200408486 Fig. 2A is a schematic view of a laser processing apparatus capable of performing the laser processing method of the sixth embodiment, and Fig. 2B is a schematic cross-sectional view of a substrate. Fig. 23 is an example of a timing diagram of an opportunity signal and a laser beam when laser processing is performed using the laser processing method of the sixth embodiment. 24A is a schematic plan view of a substrate on which lines are formed. Fig. 24A is a schematic plan view of a substrate on which dots are formed. Fig. 25 is a schematic view showing a mask rotation mechanism for holding a mask. Fig. 26 is a schematic plan view of a substrate using a mask rotation mechanism to form a line. FIG. 27A is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the seventh embodiment, and FIG. 27B is a schematic cross-sectional view of a substrate. 28A, 28B, and 28C are plan views of a substrate for explaining the positional relationship between a processed point and a beam spot. Fig. 29 is a schematic plan view of a substrate without using a mask rotation mechanism to form a line. Main component comparison table 1, 1 a, 1 b: laser light source 2: adjustable attenuator 3, 3 a: expander 4 = conical optical system 4 a, 4 b: conical lens 5: mask 5 a: aperture- 58- (55) (55) 200408486 6: Objective lens 7: Electromagnetic scanner 7a: X-direction scanner 7 b: Y-direction scanner 8. Holder 8a: XY-direction stage 9, 1 0: Voice coil mechanism 1 1: Controller 1 2: Substrate 2 0: Optical path adjustment mechanism 2 1 & ~ 21 (1: Reflector 22: Moving section 3 〇: Film 3 1: Carrying mechanism 3 2: Vacuum chuck 3 3: Rotary encoder
Lla、Lib、Lie:雷射光束Lla, Lib, Lie: laser beam
Nla、Ml、Nlc:射入位置 α 1 :射入角 S 〇 :物點 S i :像點Nla, Ml, Nlc: shot position α 1: shot angle S 〇: object point S i: image point
Sig :契機信號 lbO〜lb2 :雷射光束 60a :孔徑傾斜機構 -59- (56) (56)200408486 6 1 a :孔徑旋轉機構 6 2 a :貫通扎 63 :近接掩模 64 :近接掩模保持機構 65 :分光光學系統 65a、 69a、 69b:半波長板 6 5 b :電光元件 6 5 c、6 7 :偏光板 66 :射束緩衝器 6 8 :回折鏡 7 1 :二次聚光鏡 7 1 a :前側透鏡群 7 1 b :後側透鏡群 81a 、 81b :聚光面 8 3 : —次聚光面 91a〜91c、 93、 94a〜94e、 95、 96、 99:光束點 1 〇 1 :溝槽 103、 103a、 103b、 109a、 109b：線 104a〜104e :點 105 a〜105c :被加工點 1 10、120 :基底層 1 1 1 :轉印層 121 :表層 5 1 :雷射光源 -60- (57) (57)200408486 5 2 :均勻器 53 :遮罩 5 4 :反射鏡 5 5 :聚光鏡 5 6 :基板 5 7 : X Y方向平台 -61 -Sig: Opportunity signal lbO ~ lb2: Laser beam 60a: Aperture tilt mechanism -59- (56) (56) 200408486 6 1 a: Aperture rotation mechanism 6 2 a: Penetration 63: Proximity mask 64: Proximity mask holding Mechanism 65: Spectral optical system 65a, 69a, 69b: Half-wavelength plate 6 5 b: Electro-optical element 6 5 c, 6 7: Polarizing plate 66: Beam buffer 6 8: Folding mirror 7 1: Secondary condenser 7 1 a : Front lens group 7 1 b: Rear lens group 81 a, 81 b: Condensing surface 8 3: Sub-condensing surface 91 a to 91 c, 93, 94 a to 94 e, 95, 96, 99: Beam point 1 〇1: Groove Slots 103, 103a, 103b, 109a, 109b: lines 104a to 104e: points 105a to 105c: processed points 1 10, 120: base layer 1 1 1: transfer layer 121: surface layer 5 1: laser light source-60 -(57) (57) 200 408 486 5 2: Uniformizer 53: Mask 5 4: Mirror 5 5: Condenser 5 6: Substrate 5 7: XY-direction stage -61-