TW200305656A - Topologically tailored sputtering targets - Google Patents

Abstract

In a standard target configuration, sputtered atoms distribute in a wide angle producing a non- uniform film and poor step coverage, mainly because the flux of sputtered atoms are not collimated and the center region of the wafer experiences a higher flux of sputtered atoms than the edge of the wafer. Sputtering targets described herein are topologically and morphologically tailored such that sputtered atoms impinge directly toward a wafer in a narrow cosine distribution. In effect, the target is designed with a built-in collimator. The desired morphology and topography can be accomplished by micro (e.g., parabolic dimples) and/or macro scale (e.g., wafer contour, circular wave contour) modification of the target geometry and topography.

Description

200305656200305656

玫、發明說明 發明領域 本發明之領域係用於物理汽相沈積法（physical vapor deposition ，PVD)之濺射靶。 發明背景 電子及半導體組件越來越常用於家用及商業電子產品、 通訊產品及資料交換產品。此類家用及商業電子產品包 含：電視、電腦、蜂巢式移動電話、呼叫器、掌上型萬用 記事本、手提收音機、汽車立體音響或遙控器。由於對這 些家用及商業電子產品的需求增長，為了消費者及商業活 動的方便，需要使這些產品的體積不斷變小，易於攜帶。 這些產品體積變小的結果，使得組成這些產品的組件也 必須變得更小及/或更薄。大小或比例需要減小的組件如 ••微電子晶片互連、半導體晶片組件、電阻器、電容器、 印刷電路或接線板、電線、鍵盤、觸控板及晶片封裝。 電子及半導體組件的大小或比例減小時，在較大的組件 中出現的缺點，在比例減小的組件中會誇大。因此，在組 件減小比例以用於較小的電子產品前，如果能夠，應找出 並修正在較大組件中出現或可能會出現的缺點。 為了找出及修正電子、半導體及通訊組件中的缺點，應 分解及分析這些組件、所用材料及製造這些組件的過程。 在一些情況下，電子、半導體及通迅/資料交換組件係由 各種材料層所構成，如：金屬、合金、陶瓷、無機材料、 聚合物或有機金屬材料。此類材料層通常很薄（在厚度等 200305656 ^} 發明說明續買 級上不足幾十埃（angstroms))。為了改善這些材料層的品質 應對材料層的形成過程（如金屬或其他化合物的物理汽相 沈積）進行評估，並進行可能的改善。 在一典型的物理汽相沈積（PVD)過程中，闱一 b | 一牝I源如 電漿、雷射或離子束轟擊一試樣或把，直至原子釋放到 周的大氣中。從濺射靶釋放的原子向一基板（典型係—石夕 晶圓）的表面移動，並塗佈于該表面以形成一薄膜或—Description of the invention Field of the invention The field of the invention is a sputtering target for physical vapor deposition (PVD). BACKGROUND OF THE INVENTION Electronic and semiconductor components are increasingly used in home and commercial electronics, communications products, and data exchange products. These household and commercial electronic products include: TVs, computers, cellular mobile phones, pagers, palmtop notepads, portable radios, car stereos or remote controls. Due to the growing demand for these household and commercial electronic products, for the convenience of consumers and business activities, it is necessary to make these products smaller and easier to carry. As a result of these products becoming smaller, the components that make up these products must also be smaller and / or thinner. Components that need to be reduced in size or proportion such as microelectronic chip interconnects, semiconductor chip assemblies, resistors, capacitors, printed circuit or wiring boards, wires, keyboards, touchpads, and chip packages. When the size or proportion of electronic and semiconductor components is reduced, the disadvantages that occur in larger components are exaggerated in reduced components. Therefore, before components can be scaled down for smaller electronic products, if possible, the shortcomings that appear or may occur in larger components should be identified and corrected. In order to identify and correct shortcomings in electronic, semiconductor, and communication components, these components, the materials used, and the processes used to make them should be broken down and analyzed. In some cases, electronic, semiconductor, and communications / data exchange components are composed of layers of materials such as metals, alloys, ceramics, inorganic materials, polymers, or organometallic materials. Such material layers are usually very thin (in terms of thickness, etc. 200305656 ^} Invention descriptions are less than a few dozen angstroms on the order of continued purchase). In order to improve the quality of these material layers, the formation process of the material layers (such as physical vapor deposition of metals or other compounds) should be evaluated and possible improvements made. In a typical physical vapor deposition (PVD) process, a b | I source such as a plasma, laser, or ion beam bombards a sample or emits it until the atoms are released into the surrounding atmosphere. The atoms released from the sputtering target move toward the surface of a substrate (typically a Shixi wafer) and are coated on the surface to form a thin film or—

I J 料層。由於滅射原子的餘弦分佈，一標準PVD靶配置傾向 於產生「中心厚」及「邊緣薄」的沈積。（請見先前技藝圖^ 及 US 5,302,266、US 5,225,393、US 4,026,787 及 us 3,884,787 )。先前技 藝圖1顯不一傳統PVD配置，其包含一 ：?賤射革巴1〇及一晶圓 或基板20。原子從濺射靶1〇釋放出來，沿著一離子/原子 路徑30移動至晶圓或基板20，在該處沈積形成一層。 為沈積一更均勻的金屬膜，已提出一些方法或裝置以修 正濺射原子的大餘弦分佈。一通用的方法是在靶與該表 面（晶圓或基板）之間用物理方法放置或安裝一分離的準 直器或一同型的小孔。（請見先前技藝圖2及US 5,409,587、US 4,923,585 )設計該準直器以減少以一大角度衝擊基板或晶圓 的金屬原子的數量，同時允許金屬原子以一較小的角度移 動，通過並沈積於基板或晶圓之上，其減少在接點頂端及 通道上的沈積，且增加接點或通道的底部及側壁的沈積原 子的比例。先前技藝圖2顯示一傳統PVD配置，其包含一 濺射靶110、一晶圓或基板12〇及一分離準直器140。原子從 錢射絶110釋放，通過一離子/原子路徑130移動至晶圓或 200305656 (3) I發明說明續頁 基板120，原子在此處藉由準直器14〇 「篩選」。通過準直 器140的原子在晶圓或基板12〇上沈積形成一層。 然而’在乾/基板配件上增加一準直器，會明顯地增加 革巴材料的費用並減低該靶的壽命，因為以高角移動的原子 係沈積在準直器上而非晶圓上，因此在過程中大大消耗掉 了 。另外，添加一準直器後，所需的靶至晶圓的間距比在 標準（無準直器）程序中的靶至晶圓間距大，以容納該準直 器’且需防止在晶圓上形成一準直器形的圖形。除此以外 ，沈積在準直器上偏離的原子容易堵塞準直器，這會進一 步降低沈積效率，且當沈積物從準直器表面剝落時經常會 造成一不合需要的微粒結構。 試圖產生更均勻沈積物的另一方法是，藉由向電漿施加 射頻（radio-frequency，RF)功率以電離濺射離子（電離金屬電漿 (ionized metal plasma，IMP)法）。（請見 US 6,296,743 )在此方法中， 射頻（RF)電漿中的所有接觸面產生與電漿相關的一負電 位，這是因為相對於較重的離子，電子的活動性較高。因 此’藉由直泥的自偏壓將金屬離子吸引到晶圓表面，而無 需藉由一基座或表面的偏壓。這些垂直移動的金屬離子通 常撞擊接點或通道的底部，並改善底部及側壁的覆蓋層。 然而’射頻（RF)電漿裝置及操作條件會造成系統成本的顯 著增加及操作的複雜化。射頻（RP)電漿配置亦曾與磁體組 合’以進一步調整原子向基板或晶圓移動的路徑，然而， 這些方法的成本過高，且難以設置及監督。（請見us 6,153,061 、US 6,326,627、US 6，117,281、US 5,865,969、us 5,766,426、US 5,417,833、 200305656 (4) 發明說明續頁 US 5，188,717、US 5，135,819、US 5，126,029、US 5，106,82卜 US 4,500,409、US 4,414,086、US4,610,770 及 US 4,629,548 ) 用於改進濺射法以製造更均勻膜的其它方法亦已發展。 例如，Honeywell電子材料 ™(Honeywell Electronic Materials™，HEM) 展示乾的濺射特性可藉由使用一超微微粒尺寸的靶得以 明顯改進’其係使用等通道角擠壓（Equal- Channel Angular Extrusion ，ECAE⑧）法的專利技術（5,590,389、5,780,755 及 5,809,393)。其所 展示優點包括：電弧低、靶壽命長，裝置產量高，膜均勻 性較好且微粒少。Honeywell電子材料™還證明靶的晶體結 構可進行修正（以不形成圖案方式）以提供準直的優點。（請 見US 5,993,621及US6,302,977)。亦檢討了屬於濺射法之一的自 電離電漿（self- ionization plasma，SIP )，其可產生更均勻的膜。 此方法利用低壓及高功率，以促使濺射靶原子自行電離。 SIP需要一延長的乾至基板間隔，其產生一長的離子路徑 。長離子路徑可改進離子流的方向性，但又減少了 |巴的離 子產量。延長的離子路徑會進一步導致增加的餘弦損失， 且使其革巴的使用效率甚低。其他的方法包括在濺射過程中 機械性調整晶圓或基板（us 6,224,718 )、遮蔽部分表面（us 5,894,058 、US 5,942,356、6,242，138)、對靶及與晶圓表面之間的蒸氣進行 化學處理（US 6,057,238、US6，107,688、US 4,793,908、US 6,222,271 及 US 6,194,783 )及用光〉賤射及激化原子（us 5,382,457 )。除了 ECAE法 外’其他方法要求在基本PVD法及裝置中添加額外的機械 或化學組件，這會增加裝置及製程的成本及複雜性。 為此目的，需製造一符合需要的PVD靶及靶/晶圓配件， 200305656 (5) 其能：a)利用有利的最小深度配置；b)保持 成本相對於一傳統PVD法低；且c)使得所用設 對于傳統PVD法保持簡單。 發明概要 標準靶的老化特性使人聯想到可藉由修正 態及外形控制濺射原子的方向。在一標準靶酉e 原子呈一廣角分佈，其產生一不均勻的膜，這 晶圓的中心區域經受的、/賤射原子流南於晶圓 濺射原子流。 本發明說明的濺射靶係拓撲地及形態上地修 原子以一狹窄的餘弦分佈直接向一晶圓撞擊< 該靶内設計有一準直器。可藉由對該靶的外形 進行微觀（如：拋物線凹坑）或宏觀（如：靶表ί ，以獲得符合需要的外形及表面狀態。 自-準直濺射靶根據PVD法的應用及所使用言 任何適合的形狀及大小，及可在濺射室中濺射 。本發明說明的丨賤射#巴還包含一表面材料及-其中表面材料與核心材料耦合。表面材料及核 包含相同的元件組成或化學組成/組件，表面 組成及化學成分可進行更改或修正，使之與核 同。另外，一支撐板可與核心材料耦合，以提 外的支持，且亦可為濺射靶提供一安裝裝置。 表面材料係靶的部分，其任何時間在任一可 露於能量源中；其亦係整個靶材料的部分，其 發明說明續買 該方法的總 備及裝置相 靶的表面形 *置中，濺射 主要是由於 邊緣經受的 正，使濺射 ‘實際上，在 及表面狀態 6輪靡）修正 t備，可包括 的任何組件 -核心材料， 心材料通常 材料的元件 心材料者不 供濺射靶額 測點皆係暴 用於製造符 200305656 發明說明續頁 ⑹ 合表面塗佈所需的原子。另外，表面材料係濺射靶的部分 ，其包括至少兩個蓄意形成的凹痕，以形成一準直的表面 狀況或外形。 該自準直濺射靶的形成係：a)提供一核心材料；b)提供 一表面材料；c)將核心材料與表面材料耦合以形成一濺 射靶；且d)形成至少兩個蓄意形成的凹痕，其中該凹痕 形成一準直的表面狀態。I J material layer. Due to the cosine distribution of annihilated atoms, a standard PVD target configuration tends to produce "thick center" and "thin edge" deposits. (See previous technical drawings ^ and US 5,302,266, US 5,225,393, US 4,026,787 and us 3,884,787). The prior art FIG. 1 shows a conventional PVD configuration, which includes: a base wafer 10 and a wafer or substrate 20. The atoms are released from the sputtering target 10 and move along an ion / atomic path 30 to the wafer or substrate 20 where they are deposited to form a layer. To deposit a more uniform metal film, methods or devices have been proposed to modify the large cosine distribution of the sputtered atoms. A common method is to physically place or install a separate collimator or co-shaped small hole between the target and the surface (wafer or substrate). (See previous art figure 2 and US 5,409,587, US 4,923,585) The collimator was designed to reduce the number of metal atoms impacting the substrate or wafer at a large angle, while allowing the metal atoms to move at a smaller angle, passing through and Deposited on the substrate or wafer, it reduces the deposition on the top of the contact and the channel, and increases the proportion of deposited atoms on the bottom and sidewall of the contact or channel. Prior Art FIG. 2 shows a conventional PVD configuration including a sputtering target 110, a wafer or substrate 120, and a separation collimator 140. Atoms are released from the coin shooter 110 and moved to the wafer or 200305656 through an ion / atomic path 130 (3) I Description of the invention continued on the substrate 120, where the atoms are "screened" by the collimator 14o. The atoms passing through the collimator 140 are deposited on the wafer or substrate 120 to form a layer. However, 'adding a collimator to the dry / substrate assembly will significantly increase the cost of the Geba material and reduce the life of the target, because the atomic system moving at a high angle is deposited on the collimator instead of the wafer, so Greatly consumed in the process. In addition, after adding a collimator, the required target-to-wafer spacing is larger than the target-to-wafer spacing in the standard (no collimator) procedure to accommodate the collimator 'and to prevent A collimator-shaped pattern is formed on it. In addition, deviated atoms deposited on the collimator can easily block the collimator, which will further reduce the deposition efficiency, and often cause an undesirable particle structure when the deposit is peeled off from the surface of the collimator. Another method that attempts to produce a more uniform deposit is to ionize sputtering ions by applying radio-frequency (RF) power to the plasma (ionized metal plasma (IMP) method). (See US 6,296,743.) In this method, all contact surfaces in a radio frequency (RF) plasma generate a negative potential associated with the plasma because the electrons are more mobile relative to the heavier ions. Therefore, the metal ions are attracted to the wafer surface by the self-bias voltage of the straight mud without the need of a base or surface bias voltage. These vertically moving metal ions often hit the bottom of the contact or channel and improve the coverage of the bottom and sidewalls. However, 'radio frequency (RF) plasma equipment and operating conditions cause a significant increase in system cost and complication of operation. Radio frequency (RP) plasma configuration has also been combined with magnets' to further adjust the path of atoms moving to the substrate or wafer. However, these methods are too costly and difficult to set up and monitor. (See us 6,153,061, US 6,326,627, US 6,117,281, US 5,865,969, us 5,766,426, US 5,417,833, 200305656 (4) Description of the invention continued on US 5,188,717, US 5,135,819, US 5,126,029, US 5,106 (82, US 4,500,409, US 4,414,086, US 4,610,770, and US 4,629,548) Other methods for improving the sputtering method to make more uniform films have also been developed. For example, Honeywell Electronic Materials ™ (HEM) demonstrates that dry sputtering characteristics can be significantly improved by using an ultrafine particle size target, which uses Equal-Channel Angular Extrusion, ECAE⑧) (5,590,389, 5,780,755 and 5,809,393). The advantages shown include: low arc, long target life, high device yield, better film uniformity and fewer particles. Honeywell Electronic Materials ™ also demonstrates that the crystal structure of the target can be modified (in a non-patterned manner) to provide the benefits of collimation. (See US 5,993,621 and US 6,302,977). Self-ionization plasma (SIP), which is one of the sputtering methods, was also reviewed, which can produce a more uniform film. This method uses low voltage and high power to promote the spontaneous ionization of sputtering target atoms. SIP requires an extended dry-to-substrate interval, which produces a long ion path. Long ion paths improve the directivity of the ion flow, but reduce the ion production of | bar. The extended ion path further results in increased cosine loss and makes its use inefficient. Other methods include mechanically adjusting the wafer or substrate during the sputtering process (us 6,224,718), shielding part of the surface (us 5,894,058, US 5,942,356, 6,242,138), and chemically treating the target and the vapor between the wafer surface (US 6,057,238, US 6,107,688, US 4,793,908, US 6,222,271, and US 6,194,783) and using light> cheaply irradiated and excited atoms (us 5,382,457). In addition to the ECAE method, other methods require the addition of additional mechanical or chemical components to the basic PVD method and device, which increases the cost and complexity of the device and process. To this end, a PVD target and target / wafer assembly that meets the requirements need to be manufactured, 200305656 (5) which can: a) utilize a favorable minimum depth configuration; b) keep costs low compared to a traditional PVD method; and c) This makes the design simple for the traditional PVD method. SUMMARY OF THE INVENTION The aging characteristics of a standard target are reminiscent of the ability to control the direction of the sputtered atoms through modified states and shapes. At a standard target, the 呈 e atoms have a wide-angle distribution, which results in a non-uniform film. The central region of the wafer undergoes a low-level atomic stream that flows south of the wafer. The sputtering target described in the present invention is topologically and morphologically modified. Atoms strike a wafer directly with a narrow cosine distribution. A collimator is designed in the target. The shape of the target can be micro (such as: parabolic pits) or macro (such as: target table ί) to obtain the desired shape and surface state. Self-collimated sputtering target according to the application and application of PVD method Use any suitable shape and size, and it can be sputtered in the sputtering chamber. The base shot described in the present invention also includes a surface material and-wherein the surface material and the core material are coupled. The surface material and the core include the same Component composition or chemical composition / assembly, surface composition and chemical composition can be changed or modified to be the same as the core. In addition, a support plate can be coupled with the core material for extra support and can also provide sputtering targets A mounting device. The surface material is part of the target, which can be exposed to any energy source at any time; it is also part of the entire target material, and its invention description continues to buy the equipment and the surface shape of the device target * In the center, the sputtering is mainly due to the positive edge edge, so that the sputtering 'actually, the surface state is 6 rounds.) Correction can be made to any component-core material, core material, usually material Material components are not available for sputtering targets. The measuring points are all used for manufacturing. 200305656 Description of the Invention Continued The atom is required for surface coating. In addition, the surface material is a portion of a sputtering target that includes at least two intentionally formed dents to form a collimated surface condition or profile. The self-collimating sputtering target is formed by: a) providing a core material; b) providing a surface material; c) coupling the core material with the surface material to form a sputtering target; and d) forming at least two intentional formations Dent, wherein the dent forms a collimated surface state.

在一組件表面形成一均勻膜或層，或為了形成一組件係 藉由：a)提供一自準直的濺射靶；b)提供一表面；c)將 表面離自準直的濺射靶一距離處放置；d)用一能量源轟 擊自準直的滅射乾以形成至少一原子；e)用至少一原子 塗佈該表面。Form a uniform film or layer on the surface of a component, or to form a component by: a) providing a self-aligned sputtering target; b) providing a surface; c) separating the surface from the self-aligning sputtering target Placed at a distance; d) bombarding the self-collimated extinction stem with an energy source to form at least one atom; e) coating the surface with at least one atom.

本發明說明的濺射靶可合併於生產、建造或以修正電子 、半導體及通訊組件的任何方法或產品設計中。電子、半 導體及通訊組件通常視為包含電子類、半導體類或通訊類 產品中使用的任何分層組件。本發明說明的組件包括：半 導體晶片、電路板、晶片封裝、分離層、電路板的介電質 組件、印刷接線板、觸控板、波導管、光纖與光子傳送及 聲波傳送組件、使用或合併雙重金屬鑲嵌法製造的任何材 料及其他電路板組件，如電容器、電感器及電阻器等。 圖式簡單說明 先前技藝圖1顯示一傳統PVD靶/表面配置。 先前技藝圖2顯示添加一分離準直器的一傳統PVD靶/ 表面配置。 -10- 200305656 發明說明續頁 ⑺ 圖3係圖示本發明之一具體實施例。 圖4係圖示本發明之數種具體實施例。 圖5顯示形成一自準直濺射靶所考慮的一方法。 圖6顯示在一表面形成一均勻膜所考慮的一方法。 發明詳細說明 一標準靶的老化特性使人聯想到可藉由修正靶的外形 或表面狀態以控制濺射原子的方向。如先前技藝圖1所示， 在一標準靶配置中，濺射原子呈一廣角分佈，產生一非均 勻的膜，這主要係因為晶圓的中心區域經受的澂射原子流 高於晶圓邊緣。此時濺射原子的方向可藉由修正靶的外形 及表面狀態加以控制。具體而言，如圖3所示，靶的外形 及表面狀態可進行修正，使濺射原子可以一狹窄的餘弦分 佈直接撞擊晶圓。 圖3顯示所考慮的一的PVD配置，其包含一濺射靶210及 一晶圓或基板220。濺射靶210包括一表面材料260及一核心 材料270。該表面材料260包括蓄意形成的凹痕（本案例中係 微凹坑250)。這些蓄意形成的凹痕亦形成濺射靶上的圖案。 本發明所用「圖案」一詞的意思係蓄意形成的凹痕（重複或 經排列，或既重複又經排列）的任何形狀。藉由擔當一 「内置準直器」的微型凹坑250「預遮蔽」原子，其方式為使 它們於受到轟擊釋放時即受操縱，以在一特定的離子/原 子路徑230上移動。原子接著從濺射靶210釋放，並朝著晶 圓或基板220的方向在一離子路徑230上移動。符合需要的 外形及表面狀態可藉由對靶的外形及表面狀態進行微觀 (8) (8)200305656 發明說明續買 (如：拋物線凹坑）及/或宏觀（如：靶表面輪廓）修正獲得。 可將一支撐板與核心材料耦合，以對濺射靶提供額外的支 持及為濺射靶提供一安裝裝置。 根據PVD法中的應用及使用設備，本發明所考慮的賤射 靶可包含任何適合的形狀及大小。本發明所考慮的賤射革巴 還包含一表面材料260及一核心材料27〇，其中表面材料 與核心材料270耦合。本發明所用的「耦合」一詞的意思係 物質或組件（黏合劑，連接介面材料）的兩部分的物理連接 ，或物質或組件的兩邵分之間的物理及/或化學吸引力， 包括键結力如共價鏈及離子結合，和非鍵結力如凡得瓦力 、靜電引力、庫侖引力、氫鍵合力及/或磁引力等。表面 材料260及核心材料通常可包含相同的元件組成或化 學組成/組件，也可更改或修正表面材料26〇的元件組成及 化學成分，使之與核心材料270的不@。在大多數具體實 施例中’表面材料26〇及核心材料27〇包含相同的元素^ 組成或化學成分。然而’對於檢測革巴的使用壽命何時結束 :重要的具體實施例或沈積一混合材料層很重要的具體 貫施例中，可對表面材料260及核心材料進行修正使 •^包含不同的元件組成或化學合成物。 表面材料260係革巴210的部分，其任柯時間在任一可測點 ⑸:：露於能量源中；其亦係整個靶材料的部分，其用於 製造符合表面塗佈所需原子。 ^ 表面材料260係濺 巴210的邵分’其包括少 u街〜办成的凹痕，以形 準直的表面狀態或外形。本發明所用的語詞「準直的 -12- 200305656 (9) I發明說明續頁The sputtering targets described herein can be incorporated into any method or product design that produces, builds, or modifies electronic, semiconductor, and communications components. Electronic, semiconductor, and communication components are generally considered to include any layered components used in electronics, semiconductor, or communication products. The components described in the present invention include: semiconductor wafers, circuit boards, chip packages, separation layers, dielectric components of circuit boards, printed wiring boards, touchpads, waveguides, optical fiber and photon transmission and acoustic transmission components, use or merge Any material and other circuit board components, such as capacitors, inductors, and resistors, made by dual metal damascene. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 of the prior art shows a conventional PVD target / surface arrangement. Prior Art Figure 2 shows a conventional PVD target / surface configuration with a separate collimator added. -10- 200305656 Description of the Invention Continued ⑺ FIG. 3 illustrates a specific embodiment of the present invention. FIG. 4 illustrates several specific embodiments of the present invention. Figure 5 shows a method considered for forming a self-collimated sputtering target. Figure 6 shows a method considered for forming a uniform film on a surface. Detailed description of the invention The aging characteristics of a standard target are reminiscent of the ability to control the direction of the sputtered atoms by modifying the shape or surface state of the target. As shown in FIG. 1 of the prior art, in a standard target configuration, the sputtering atoms are distributed at a wide angle, resulting in a non-uniform film, mainly because the central region of the wafer is subjected to a jet of atomic current that is higher than the wafer edge . At this time, the direction of the sputtered atoms can be controlled by modifying the shape and surface state of the target. Specifically, as shown in FIG. 3, the shape and surface state of the target can be modified so that the sputtering atoms can directly impact the wafer with a narrow cosine distribution. Figure 3 shows a PVD configuration under consideration, which includes a sputtering target 210 and a wafer or substrate 220. The sputtering target 210 includes a surface material 260 and a core material 270. The surface material 260 includes intentionally formed dents (in this case, micro-pits 250). These intentionally formed dents also form a pattern on the sputtering target. As used herein, the term "pattern" means any shape that is deliberately formed (repeated or arranged, or both repeated and arranged). The micro-pits 250 which act as a "built-in collimator" "pre-shield" the atoms in such a way that they are manipulated to move on a specific ion / atomic path 230 when they are released by bombardment. The atoms are then released from the sputtering target 210 and move on an ion path 230 in the direction of the wafer or substrate 220. The appearance and surface conditions that meet the requirements can be obtained by modifying the shape and surface condition of the target. (8) (8) 200305656 Description of the invention. Continue to buy (eg: parabolic pits) and / or macro (eg: target surface profile) correction. . A support plate can be coupled to the core material to provide additional support for the sputtering target and to provide a mounting device for the sputtering target. Depending on the application and equipment used in the PVD method, the base target considered by the present invention may include any suitable shape and size. The base film considered in the present invention further includes a surface material 260 and a core material 270, wherein the surface material is coupled to the core material 270. The term "coupled" as used in the present invention means the physical connection of two parts of a substance or component (adhesive, connection interface material), or the physical and / or chemical attraction between two parts of a substance or component, including Bonding forces such as covalent chains and ionic bonding, and non-binding forces such as van der Waals force, electrostatic attraction, Coulomb attraction, hydrogen bonding force, and / or magnetic attraction. The surface material 260 and the core material may generally include the same component composition or chemical composition / assembly, and the component composition and chemical composition of the surface material 26 may also be changed or modified to be different from the core material 270. In most embodiments, the 'surface material 26o and the core material 27o contain the same element ^ composition or chemical composition. However, 'for detecting when the service life of Geba is over: an important embodiment or a specific embodiment where it is important to deposit a layer of mixed material, the surface material 260 and the core material can be modified to include different component compositions Or chemical composition. The surface material 260 is part of Geba 210, and its time at any measurable point ⑸ :: exposed to the energy source; it is also part of the entire target material, which is used to make the atoms required for surface coating. ^ The surface material 260 is the shaofen of the splash bar 210, which includes a small number of dents, formed in a collimated surface state or shape. Terms used in the present invention "collimated -12- 200305656 (9) I Description of the invention continued page

表面狀態」的意思係濺射靶210的表面材料260的部分，其直 接影響原子的餘弦分佈，使得一傳統濺射靶中的餘弦原子 分佈可測量地變窄。換句話說，在沒有任何外部因素（如 磁力、化學添加劑或遮罩）的情況下，至少兩個蓄意形成 的凹痕（形成一準直的表面狀態）的結合可使傳統的原子 (通常由一傳統濺射乾產生）餘弦分佈變窄，雖然可能會有 外部因素進一步影響濺射原子。如前所述，在先前技藝圖 1及圖3中可看出一傳統的原子餘弦分佈與一變窄的原子 餘弦分佈的區別。"Surface state" means the portion of the surface material 260 of the sputtering target 210 that directly affects the cosine distribution of the atoms, making the cosine atom distribution in a conventional sputtering target measurably narrower. In other words, the combination of at least two deliberately formed dents (forming a collimated surface state) without any external factors (such as magnetic forces, chemical additives or masks) can A traditional sputtering process produces a narrow cosine distribution, although external factors may further affect the sputtering atoms. As mentioned earlier, in the prior art Figures 1 and 3, the difference between a conventional atomic cosine distribution and a narrower atomic cosine distribution can be seen.

如前所述，在濺射靶210的表面材料260上形成至少兩蓄 意形成的凹痕，其產生一準直的表面狀態或外形。有較大 蓄意形成的凹痕的實施例通常包括所指的「宏觀修正」。 此處所用語詞「宏觀修正」的意思係將靶表面修正為圓形 波輪廓，以補償由於在一磁電管濺射系統中的旋轉磁力所 造成的靶的不均勻浸蝕。大多數實施例中的一宏觀修正 280 (如圖4所示）在濺射靶210上通常包含較大且為蓄意形 成的凹痕，該凹痕也許類似一凸面鏡或凹面鏡或一錐體。 包括兩個以上較小蓄意形成凹痕的實施例通常包括所指 的「微凹坑」250。此處所用術語「微凹坑」的意思係那些 凹痕，其包括一封閉環形的開口 ，其形狀包括圈（圓形） 、六邊形（六方的）、三角形（三角的）、方形、橢圓形及其 他的曲邊或直邊的封閉環形，且其縱橫比超過1: 1。圖3顯 示一濺射靶中的微凹坑的橫剖面圖。圖4顯示濺射靶210 中微凹坑250及宏觀修正280的俯視圖。圖4顯示包含微凹 -13- 200305656 (ίο) 發明說明續頁 坑250的濺射靶中封閉環形的概念。進一步可考慮一濺射 靶既包含一宏觀修正280又包含微凹坑250。圖4中的濺射 靶4( b)及4( d)係包含有宏觀修正280及微凹坑250的革巴。As described above, at least two intentionally formed dents are formed on the surface material 260 of the sputtering target 210, which produces a collimated surface state or shape. Embodiments with larger deliberate indentations often include what is referred to as "macro correction." The term "macro correction" as used herein means the modification of the target surface to a circular wave profile to compensate for uneven etching of the target caused by the rotating magnetic force in a magnetron sputtering system. A macro correction 280 (shown in Figure 4) in most embodiments typically includes large and intentionally formed indentations on the sputtering target 210, which may resemble a convex mirror or concave mirror or a cone. Embodiments that include more than two smaller deliberate indentations typically include what is referred to as a "micro-pit" 250. The term "micro-pits" as used herein means those dents, which include a closed ring-shaped opening, the shape of which includes a circle (circular), hexagon (hexagonal), triangle (triangular), square, oval And other closed loops with curved or straight sides, and their aspect ratio exceeds 1: 1. Figure 3 shows a cross-sectional view of micro-pits in a sputtering target. FIG. 4 shows a top view of the micro pits 250 and the macro corrections 280 in the sputtering target 210. FIG. 4 shows the concept of a closed loop in a sputtering target containing a pit 250, including a dimple. It is further considered that a sputtering target includes both a macro correction 280 and a micro-pit 250. The sputtering targets 4 (b) and 4 (d) in FIG. 4 include a macro bar with a macro correction 280 and a micro pit 250.

宏觀修正280及微凹坑250可在最初製造靶時利用造模 法形成’或藉由一些物理或機械加工、化學及或餘刻/去 除法形成。進一步亦可考慮於靶210最初形成時，可在革巴 210内將宏觀修正280鑄模進去，且於靶210形成後在革巴内 蝕刻微凹坑250，反之亦然。具體而言，如圖5所示，自準 直的 '濺射革巴210的形成係藉由a)提供一核心材料270 (3〇〇); b)提供一表面材料260 (310) ; c)將核心材料270與表面材料 260摘合以形成錢射起210(320);及d)形成至少兩蓄意形成 的凹痕，其形成一準直的表面狀態（33〇)。 設置核心材料270使之可為表面材料260提供支持並^ 在一濺射過程中提供額外的原子，或當靶的使用壽命結^ 時提供訊息。例如：於核心材料270包含一不同於表面才 料260的最初材料之情況下，一品質栌制 口口貝ί工制友置感測到靶2Macro corrections 280 and micro-pits 250 may be formed 'using a modeling method when the target is first manufactured, or by some physical or mechanical processing, chemical, and / or engraving / removal methods. It is further considered that when the target 210 is initially formed, a macro correction 280 mold may be inserted into the Geba 210, and the micro-pits 250 are etched in the Geba after the target 210 is formed, and vice versa. Specifically, as shown in FIG. 5, the formation of the self-collimated 'sputtered Geba 210 is provided by a) providing a core material 270 (300); b) providing a surface material 260 (310); c ) The core material 270 is combined with the surface material 260 to form a coin shot 210 (320); and d) at least two intentionally formed dents are formed, which form a collimated surface state (33 °). The core material 270 is provided to support the surface material 260 and to provide additional atoms during a sputtering process, or to provide information when the target's service life is over. For example, in the case where the core material 270 contains an original material different from the surface material 260, a quality control mouth mouth shell ίworker senses the target 2

及晶圓220之間的核心材料原子的存在，可能必須將靶2 除去並重新裝備或完全廢除，因為金屬塗層的化學士效个 及元件純度會由於不合需要的物質在現有的表面子/二 上沈積而受到損害。核心材料27〇同時亦 丁 4疋濺射靶210的崔 分，其未包含宏觀修正280或微型凹坑25〇。 狹s之，核心才: 料270在結構及外形上通常是統一的。 滅射乾210通常可包含任何材料，其係 』罪地形成- 濺射靶；b)當藉由一能量源轟擊時可由 歲射；且c) ϋ -14- 200305656 發明說明續頁 ⑼The existence of the core material atom between the wafer 220 and the target 2 may have to be removed and re-equipped or completely abolished, because the chemistries and component purity of the metal coating may be due to undesired substances on the existing surface / The second deposit was damaged. The core material 270 is also the Cui of the 4H sputtering target 210, which does not include macro correction 280 or micro-pits 25. The narrow core, the core talent: the material 270 is usually uniform in structure and shape. The annihilation stem 210 may generally contain any material which is a ‘criminal formation-sputtering target; b) may be shot by the year when bombarded by an energy source; and c) ϋ -14- 200305656 Description of the invention continued ⑼

於在一晶圓或基板上形成一最終或先行層。可考慮製造符 合需要的濺射靶210的材料為金屬、合金、傳導聚合物、 傳導複合材料、傳導單體、介電質材料、硬罩材料及其他 任何適合的濺射材料。此處所用的術語「金屬」的意思係 元件週期表的d塊及f塊中的元件，以及那些具有類似金 屬性質的元件，如秒及錯。此處所用的語詞「d塊」的意 思係指那些在元件核外圍3d、4d、5d及6d軌道有電子填充 的元件。此處所用的短語「f塊」的意思係指那些在元件核 4f及5f軌道有電子填充的元件，包括鑭族元件及婀族元件 。較佳的金屬包括鈥、碎、姑、銅、鎳、鐵、鋅、訊、锆 、銘及銘基材料、輕、魏、錫、絡、銘、把、金、銀、棄I 、銷、麵、夠、数或以上之化合物。更佳的金屬包括··銅 、紹、鶴、歛、姑、短、鍰、鐘、碎、I孟、鐵或以上之化 合物。最佳的金屬包括：銅、銘及銘基材料、鎮、鈥、锆 、姑、輕、銳或以上之化合物。考慮想的較佳材料範例包 括：鋁及銅（用於超細微粒的鋁濺射靶及銅濺射靶）；鋁、 銅、姑、輕、結、及鈥（用於300 mm濺射革巴）；及用於紹濺 射乾的銘，該把在表面層上沈積一薄的、高度正形的铭「 種子」層。應能理解此處所用的語詞「及其化合物」的意 思係在一些濺射靶中可能會有金屬雜質，如銅濺射靶有鉻 及鋁雜質；或蓄意形成的金屬及其他材料的組合以形成濺 射靶，如包含合金、鏰化物、碳化物、氟化物、氮化物、 石夕化物、氧化物等的乾。 術語「金屬」還包括合金、金屬/金屬複合物、金屬陶资 -15 - 200305656 發明說明續頁 (12)A final or advanced layer is formed on a wafer or substrate. It may be considered that the materials for manufacturing the desired sputtering target 210 are metal, alloy, conductive polymer, conductive composite material, conductive monomer, dielectric material, hard cover material, and any other suitable sputtering material. As used herein, the term "metal" means components in blocks d and f of the periodic table, as well as those with gold-like properties such as seconds and errors. The term "d-block" as used herein means those elements having electronic fills in the 3d, 4d, 5d, and 6d orbits of the periphery of the element core. The phrase "f-block" as used herein refers to those elements that have electron filling in the orbits 4f and 5f of the element core, including lanthanide-group elements and rhenium-group elements. Preferred metals include copper, copper, nickel, iron, zinc, zinc, zirconium, Ming and Ming-based materials, light, Wei, tin, copper, Ming, gold, silver, copper Surface, enough, several or more compounds. More preferred metals include copper, Shao, crane, agglomerate, stubborn, short, hafnium, bell, broken, I, Meng, iron or more compounds. The best metals include: copper, Ming and Ming base materials, town, “Zirconium”, “Zhu”, “Light”, “Sharp” or above. Examples of preferred materials to consider include: aluminum and copper (for ultrafine particles of aluminum sputtering targets and copper sputtering targets); aluminum, copper, aluminum, light, junction, and (for 300 mm sputtering leather Bar); and inscriptions for sputtering, a thin, highly conformal "seed" layer should be deposited on the surface layer. It should be understood that the term "and its compounds" as used herein means that there may be metal impurities in some sputtering targets, such as chromium and aluminum impurities in copper sputtering targets; or a combination of intentionally formed metals and other materials to A sputtering target is formed, such as a dry containing alloy, halide, carbide, fluoride, nitride, petrified, oxide, and the like. The term "metal" also includes alloys, metal / metal composites, and ceramic materials -15-200305656 Description of the invention continued (12)

複合物、金屬聚合複合物，及其他的金屬複合物。本發明 所考慮的合金包括：金、銻、砷、硼、銅、鍺、鎳、銦、 I巴、轉、石夕、姑、訊、鐵、給、鈇、鈇、锆、鶴、銀、銘 、輕、錫、鋅、經、I孟、銖、及/或铑。特定的合金包括 金銻、金坤、金硼、金銅、金鍺、金鎳、金鎳錮、金I巴、 金鱗、金碎、金銀銘、金麵、金錫、金鋅、免If、飽龜、 姜巴鎳、銘把、彡ε銖、銘铑、銀坤、銀銅、銀鎵、銀金、銀 鈀、銀鈦、鈦锆、鋁銅、鋁矽、鋁矽銅、鋁鈦、鉻銅、鉻 鐘ίε、絡I孟銘、絡鉑、絡対、姑銘、姑結銳、姑锆铑、姑 結忽、銅鎳、鐵銘、鐵铑、鐵is、絡氧化碎、絡訊、鉛絡 、鉛絡鎳、鉛絡銘、姑鉻輕、姑鉻起舶、姑鐵、鉛鐵硼、 姑鐵絡、姑鐵結、姑鎳、姑鎳鉻、姑鎳鐵、姑鎳铪、鉛銳 給、姑就鐵、姑就鈥、鐵輕絡、鐘银、4孟Ιε銘、I孟銘、4孟 姥、龜釕、鎳鉻、鎳絡碎、鎳钴鐵、鎳鐵、鎳鐵絡、鎳鐵 铑、鎳鐵锆、鎳巍、鎳訊、鐫鈥及/或以上之複合物。Composites, metal polymer composites, and other metal composites. The alloys considered in the present invention include: gold, antimony, arsenic, boron, copper, germanium, nickel, indium, Ibar, turn, Shi Xi, Gu, Xun, iron, iron, hafnium, hafnium, zirconium, crane, silver, Inscription, Light, Tin, Zinc, Warp, I Men, Baht, and / or Rhodium. Specific alloys include gold antimony, gold kun, gold boron, gold copper, gold germanium, gold nickel, gold nickel hafnium, gold I bar, gold scale, gold broken, gold and silver Ming, gold surface, gold tin, gold zinc, free If, Saturated tortoise, Ginger nickel, Mingba, 彡 ε baht, Ming rhodium, Yinkun, silver copper, silver gallium, silver gold, silver palladium, silver titanium, titanium zirconium, aluminum copper, aluminum silicon, aluminum silicon copper, aluminum titanium , Chrome copper, chrome bell, epsilon, Meng Ming, Luo platinum, Luo Lu, Gu Ming, Gu Jie Rui, Gu Zr and Rho, Gu Jie, Cu, Ni, Fe Ming, Fe Rhodium, Fe is, iron oxide broken, Network news, lead network, lead network nickel, lead network name, lead chromium light, lead chromium, lead iron, lead iron boron, lead iron network, lead iron node, lead nickel, lead nickel chromium, lead nickel iron, lead iron Nickel tincture, lead sharpening, Gu Jiu iron, Gu Jiu ', iron light network, Zhong Yin, 4 Meng Iε Ming, I Meng Ming, 4 Meng Jing, turtle ruthenium, nickel chromium, nickel broken, nickel cobalt iron, nickel A complex of iron, nickel iron, nickel iron rhodium, nickel iron zirconium, nickel iron, nickel, nickel, rhenium, and / or more.

至於本發明所考慮用於濺射靶210的其他材料，下面化 合物係可考慮作為濺射靶210的範例（雖然所列並不詳盡） :硼化鉻、硼化鑭、硼化鉬、硼化鈮、硼化妲、硼化鈦、 硼化鎢、硼化釩、硼化锆、碳化硼、碳化鉻、碳化鉬、碳 化鈮、碳化矽、碳化鈕、碳化鈦、碳化鎢、碳化釩、碳化 锆、氟化鋁、氟化鋇、氟化鈣、氟化鈽、冰晶石、氟化鋰 、氟化鎂、氟化鉀、稀土氟化物、氟化鈉、氮化鋁、氮化 硼、氮化鈮、氮化矽、氮化鋰、氮化鈦、氮化釩、氮化锆 、矽化鉻、矽化鉬、矽化鈮、矽化鋰、矽化鈦、矽化鎢、 -16- 200305656 (13) I發明說明續實 矽化釩、矽化锆、氧化鋁、氧化銻、氧化鋇、鈦酸鋇、氧 化麵、鈇酸銀、鈥酸鋇總、氧化絡、氧化銅、氧化給、氧 化鎂、氧化鉬、五氧化銳、稀土氧化物、二氧化珍、一氧 化矽、氧化鳃、鈦酸鳃、五氧化鋰、氧化錫、氧化銦、氧 化銦錫、鋁酸鑭、氧化鑭、鈦酸鉛、锆酸鉛、锆酸鈦酸鉛 、銘化鈇、銳酸麵、氧化鈥、氧化鎢、氧化紀、氧化鋅、 氧化锆、碲化鉍、硒化鎘、碲化鎘、硒化鉛、硫化鉛、碲 化鉛、硒化鉬、硫化鉬、硒化鋅、硫化鋅、碲化鋅及/或 以上之複合物。 藉由本發明所述靶的原子濺射產生的薄膜層可在任何 數I或稠度的層上形成，包括其他金屬層、基板層220、 介電質層、硬罩層或蝕刻停止層、光微影蝕刻層、抗反射 層等等。在一些較佳具體實施例中，介電質層可包含所考 慮的介電質材料，其由Honeywell國際公司生產或揭示，包 括但不限於·· a) FLARE (聚（芳基醚）），所包括化合物如已發表 之專利案（US 5959157、US 5986045、US 6124421、US 6156812、US 6172128、US 6171687、US 6214746)及待批准申請案（09/197478、 09/538276、09/544504、09/741634、09/651396、09/545058、09/587851、 09/618945、09/619237、09/792606)中所揭示者；b)金剛烷基材料， 如在待批准申請案09/545058 ; 2001年10月17日存檔的序號 PCT/US01/22204 ;2001 年 12 月 31 日存檔的 PCT/USO1/50182 ; 2001 年 12月31日存檔的60/345374 ; 2002年1月8日存檔的60/347195及 2002年1月15日存檔的60/350187中所示；c)共同讓渡的美國 專利案5，115,082、5,986,045及6，143,855 ;2001年4月26日出版白勺共 200305656 (14) I發明說明續頁 同讓渡國際專利案wo 01/29052及2001年4月26日出版的WO 01/29141 ;以及d)微多孔的氧化矽材料及氧化矽基化合物， 如在已發表的專利案 US 6022812、US 6037275、US 6042994、US 6048804 、US 6090448、US 6126733、US6140254、US6204202、US6208014 及待 批准申請案 09/046474、09/046473、09/111084、09/360131、09/378705 、09/234609、09/379866、09/141287、09/379484、09/392413、09/549659As for the other materials considered for the sputtering target 210 in the present invention, the following compounds can be considered as examples of the sputtering target 210 (although the list is not exhaustive): chromium boride, lanthanum boride, molybdenum boride, boride Niobium, hafnium boride, titanium boride, tungsten boride, vanadium boride, zirconium boride, boron carbide, chromium carbide, molybdenum carbide, niobium carbide, silicon carbide, carbide button, titanium carbide, tungsten carbide, vanadium carbide, carbide Zirconium, aluminum fluoride, barium fluoride, calcium fluoride, hafnium fluoride, cryolite, lithium fluoride, magnesium fluoride, potassium fluoride, rare earth fluoride, sodium fluoride, aluminum nitride, boron nitride, nitrogen Niobium, silicon nitride, lithium nitride, titanium nitride, vanadium nitride, zirconium nitride, chromium silicide, molybdenum silicide, niobium silicide, lithium silicide, titanium silicide, tungsten silicide, -16- 200305656 (13) I Invention Description Continuation of Vanadium Silicide, Zirconium Silicide, Alumina, Antimony Oxide, Barium Oxide, Barium Titanate, Oxide Surface, Silver Gallate, Barium Oxide Oxidation sharp, rare earth oxide, dioxide, silicon monoxide, oxidized gill, titanate gill, lithium pentoxide, oxidized , Indium oxide, indium tin oxide, lanthanum aluminate, lanthanum oxide, lead titanate, lead zirconate, lead zirconate titanate, Minghua tincture, sharp acid surface, oxide ', tungsten oxide, oxide period, zinc oxide, oxidation Zirconium, bismuth telluride, cadmium selenide, cadmium telluride, lead selenide, lead sulfide, lead telluride, molybdenum selenide, molybdenum sulfide, zinc selenide, zinc sulfide, zinc telluride, and / or a combination thereof. The thin film layer produced by atomic sputtering of the target according to the present invention can be formed on a layer of any number I or a consistency, including other metal layers, substrate layers 220, dielectric layers, hard cap layers or etch stop layers, photomicrographs Shadow etching layer, anti-reflection layer, etc. In some preferred embodiments, the dielectric layer may comprise a considered dielectric material, which is produced or disclosed by Honeywell International, including but not limited to a) FLARE (poly (aryl ether)), Included compounds include published patents (US 5959157, US 5986045, US 6124421, US 6156812, US 6172128, US 6171687, US 6214746) and pending applications (09/197478, 09/538276, 09/544504, 09 / 741634, 09/651396, 09/545058, 09/587851, 09/618945, 09/619237, 09/792606); b) adamantyl material, as in pending application 09/545058; 2001 Serial number PCT / US01 / 22204 filed on October 17, 2010; PCT / USO1 / 50182 filed on December 31, 2001; 60/345374 filed on December 31, 2001; 60 / filed on January 8, 2002 347195 and 60/350187 filed on January 15, 2002; c) U.S. Patent Cases 5,115,082, 5,986,045, and 6,143,855, which were jointly assigned; published April 30, 2001, a total of 200305656 (14) I Description of the invention The continuation pages are the same as those assigned in the international patent case wo 01/29052 and WO 01/29141 published on April 26, 2001; and d) slightly more Silicon oxide materials and silicon oxide-based compounds, such as in published patent cases US 6022812, US 6037275, US 6042994, US 6048804, US 6090448, US 6126733, US6140254, US6204202, US6208014 and pending applications 09/046474, 09 / 046473, 09/111084, 09/360131, 09/378705, 09/234609, 09/379866, 09/141287, 09/379484, 09/392413, 09/549659

、09/488075、09/566287及09/214219 (其全部合併為本專利案的 參考）中所揭示的那些化合物，及e) Honeywell HOSP®有機碎氧 燒（organosiloxane) 〇, 09/488075, 09/566287, and 09/214219, all of which are incorporated by reference in this patent, and e) Honeywell HOSP® organic siloxanes.

晶圓或基板220可包括任何符合需要的大體固體材料。 特別符合需要的基板220包括膜、玻璃、陶瓷、塑膠、金 屬或塗層金屬、或複合材料。在較佳具體實施例中，基板 220包含一矽或坤化鍺晶模或晶圓表面，一封裝表面（在鍍 銅、銀、鎳或金的引線架中），一銅表面（在電路板或封裝 互連線路中），一通道壁或加強條介面（「銅」包括裸銅及 其氧化物），一聚合物基封裝或板介面（諸如用於一聚醯亞 胺基彈性封裝中者），船或其他金屬合金焊球表面，玻璃 及聚合物如聚醯亞胺等。在更佳具體實施例中，基板220包 含在封裝及電路板行業中常用的材料，如矽、銅、玻璃或 聚合物。 本發明所考慮的基板層220還可包含至少兩層材料。包 含基板層220的一材料層可包括上述基板材料。包含基板 層220的其他材料層可包括聚合物層、單體、有機化合物 、無機化合物、有機金屬材料、連續層及毫微多孔層。 -18- 200305656 (15) I發明說明續頁The wafer or substrate 220 may include any substantially solid material that meets the needs. Particularly desirable substrates 220 include films, glass, ceramics, plastics, metal or coated metals, or composite materials. In a preferred embodiment, the substrate 220 includes a silicon or germanium crystal mold or wafer surface, a package surface (in a copper, silver, nickel, or gold-plated lead frame), and a copper surface (in a circuit board) Or package interconnects), a channel wall or stiffener interface ("copper" includes bare copper and its oxides), a polymer-based package or board interface (such as those used in a polyimide-based flexible package) ), The surface of the ship or other metal alloy solder balls, glass and polymers such as polyimide. In a more preferred embodiment, the substrate 220 contains materials commonly used in the packaging and circuit board industries, such as silicon, copper, glass, or polymers. The substrate layer 220 considered in the present invention may further include at least two layers of materials. A material layer including the substrate layer 220 may include the above-mentioned substrate material. Other material layers including the substrate layer 220 may include a polymer layer, a monomer, an organic compound, an inorganic compound, an organic metal material, a continuous layer, and a nanoporous layer. -18- 200305656 (15) I Description of Inventions Continued

本發明所用的術語「單體」係指任何能自體形成一共價 鍵的化合物，或以重複的方式形成的不同化合物。單體間 重複键的形成可帶來一線性的、分支的、超分支的或三維 的產品。此外，單體自身可包含重複的構建塊，當由這些 單體形成的聚合物聚合時，則術語稱為「塊聚合物」。單 體可屬於各種的化學分子分類，其包括有機分子、有機金 屬分子或無機分子。單體的分子量可在大約40道爾頓 (Dalton)至20000道爾頓之間大幅度變化。然而，特別當單體 包含重複的構建塊時，單體會有更高的分子量。單體還可 包括額外的原子團，如用於交連的原子團。 本發明所用的術語「交連」係指一過程，其中至少有兩 個分子或分子的兩部分藉由化學的相互作用連接。這種相 互作用可以許多不同的方式發生，包括一共價键的形成、 氫鍵的形成、疏水的、親水的、離子的或靜電的相互作用 。此外，分子相互作用的特徵為至少一分子與自身的暫時 物理連接，或兩個或兩個以上分子間的暫時物理連接。The term "monomer" as used herein refers to any compound capable of forming a covalent bond by itself, or a different compound formed in a repeating manner. The formation of repeating bonds between monomers can result in a linear, branched, hyperbranched, or three-dimensional product. In addition, the monomers themselves can contain repeating building blocks, and when polymers formed from these monomers are polymerized, the term is called "block polymer." Monomers can belong to various chemical molecular classifications, including organic molecules, organic metal molecules, or inorganic molecules. The molecular weight of the monomer can vary widely from about 40 Daltons to 20,000 Daltons. However, especially when the monomer contains repeating building blocks, the monomer will have a higher molecular weight. The monomer may also include additional radicals, such as those used for crosslinking. The term "cross-linking" as used in the present invention refers to a process in which at least two molecules or two parts of a molecule are connected by chemical interactions. This interaction can occur in many different ways, including the formation of a covalent bond, the formation of a hydrogen bond, and a hydrophobic, hydrophilic, ionic, or electrostatic interaction. In addition, molecular interactions are characterized by a temporary physical connection between at least one molecule and itself, or a temporary physical connection between two or more molecules.

所考慮的聚合物可包括廣泛的功能或結構部分，其包括 芳香族系統及函化原子團。此外，合適的聚合物可有多種 組態，包括同元聚合物及雜聚物。此外，替代性的聚合物 可有多種形式，如線性的、分支的、超分支的或三維的。 所考慮的聚合物的分子量跨越甚廣範圍，典型係介於400 道爾頓及400000道爾頓之間或更多。. 所考慮的無機化合物如：矽酸鹽、鋁酸鹽及包含過渡金 屬的化合物。有機化合物包括如：聚芳基醚、聚驢亞胺及 -19- 200305656 發明說明續頁 (16) 聚酯。所考慮的有機金屬化合物包括如：聚（二甲基矽氧 烷）、聚（乙烯基矽氧烷）及聚（三氟丙基矽氧烷）。 如果對於材料而言，是毫微多孔材料合乎需要而非連續 材料，基板層220還可包含複數個之空隙。空隙通常為球 形，但替代的或額外的空隙可有任何合適的形狀，包括管 狀，薄片狀、圓盤狀或其他形狀。所考慮的空隙可有任何 合適的直徑。進一步所考慮的，至少有一些空隙可與鄰近 空隙相連以產生一結構，其有大量連接的或「開放的」孔 。較佳的空隙有少於1微米的平均直徑，更佳的空隙有少 於100奈米的平均直徑，而空隙少於10奈米的平均直徑則 尤佳。進一步所考慮的，此類空隙可均勾地或無規律地分 散於基板層内。在一較佳具體實施例中，空隙均勾地分散 於基板層220内。 製造及使用自準直的或拓撲修正的濺射靶210所考慮的 好處包括：設計簡單、相對成本低、一内置的準直器、較 好的分段覆蓋率及相對靶壽命較長等其他好處。 應用 本發明說明的濺射靶210可合併於生產、建造或以其他 方式修正電子、半導體及通訊/資料傳輸組件的任何製程 或製造設計中。本發明所考慮的電子、半導體、通訊組件 通常視為包括任何分層組件，其可用於電子類、半導體類 或通訊類產品。所考慮組件包括：微晶片、電路板、晶片 封裝、分離層、電路板的介電質組件、印刷接線板、觸控 板、波導管、光纖與光子傳送及聲波傳送組件、使用或結 -20- 200305656 (17) I發明說明續頁 合雙重金屬鑲嵌法的任何材料及其他電路板組件，如電容 器、電感器及電阻器等。 當工業或其他消費者準備使用電子類、半導體類及通訊 /資料傳輸類產品時，它們可視為「成品」。可視為成品的 消費產品如：電視、電腦、蜂巢式移動電話、呼叫器、掌 上型個人數位助理、手提收音機、汽車立體聲系統及遙控 器等。還可考慮的「中間」產品如：電路板、晶片封裝及 键盤（潛在使用於成品）。 從概念模型至最終的放大模型中的任何階段，電子、半 導體及通訊/資料傳輸產品還包括一原型組件。原型也許 包含或未包含在成品中計劃的實際組件，且為了消除在初 始測試中對其他組件的最初影響，原型會有一些組件的構 造係由複合材料製成。 在一組件表面形成一均勻膜或層或為了形成一組件的方 法包括：a)提供一自準直濺射靶400 ; b)提供一表面410 ; c)將該表面離自準直濺射靶420 —距離處放置；d)用能源 轟擊自準直濺射靶以形成至少一原子430 ;然後e)用至少 一原子440塗佈該表面（如圖6所示）。自準直濺射靶包含本 發明所說明的濺射靶210，其進一步包含一表面材料260及 一核心材料270 ，其中的表面材料260包含至少兩凹痕（形 成一準直的表面狀態）。如本發明說明，所考慮提供的表 面為任何適合的表面，其包括一晶圓、基板、介電質材料 、硬罩層、其他金屬、合金或金屬複合物層、抗反射層或 其他任何適合的分層材料。本發明所考慮的自準直濺射革巴The polymers considered may include a wide range of functional or structural moieties, including aromatic systems and functionalizing radicals. In addition, suitable polymers are available in a variety of configurations, including homopolymers and heteropolymers. In addition, alternative polymers can take many forms, such as linear, branched, hyperbranched, or three-dimensional. The molecular weight of the polymer under consideration spans a wide range, typically between 400 Daltons and 400,000 Daltons or more. Considered inorganic compounds such as silicates, aluminates and compounds containing transition metals. Organic compounds include, for example, polyaryl ethers, polydonimines, and -19-200305656 Description of the Invention Continued (16) Polyester. Organometallic compounds under consideration include, for example, poly (dimethylsiloxane), poly (vinylsiloxane), and poly (trifluoropropylsiloxane). If a nanoporous material is desirable for the material rather than a continuous material, the substrate layer 220 may further include a plurality of voids. The voids are usually spherical, but alternative or additional voids may have any suitable shape, including tube-like, sheet-like, disc-like, or other shapes. The gap under consideration may have any suitable diameter. Considering further, at least some of the voids can be connected to adjacent voids to create a structure that has a large number of connected or "open" holes. Preferred voids have an average diameter of less than 1 micron, more preferred voids have an average diameter of less than 100 nanometers, and mean diameters of the voids are less than 10 nanometers. It is further considered that such voids may be uniformly or irregularly dispersed in the substrate layer. In a preferred embodiment, the voids are uniformly dispersed in the substrate layer 220. Benefits considered in the manufacture and use of self-collimated or topologically modified sputtering targets 210 include: simple design, relatively low cost, a built-in collimator, better segment coverage, and longer relative target life. benefit. Application The sputtering target 210 described in the present invention can be incorporated into any process or manufacturing design that produces, builds, or otherwise modifies electronic, semiconductor, and communications / data transmission components. The electronic, semiconductor, and communication components considered in the present invention are generally considered to include any layered components that can be used in electronic, semiconductor, or communication products. Components considered include: microchips, circuit boards, chip packages, separation layers, dielectric components of circuit boards, printed wiring boards, touchpads, waveguides, optical fiber and photon transmission and acoustic transmission components, use or junction-20 -200305656 (17) I Description of the invention Continuing any material and other circuit board components such as capacitors, inductors, and resistors of the double metal damascene method. When industrial or other consumers plan to use electronics, semiconductors, and communications / data transmission products, they can be considered "finished products." Consumer products that can be considered as finished products such as: TVs, computers, cellular phones, pagers, handheld personal digital assistants, portable radios, car stereos and remote controls. Other "intermediate" products to consider include circuit boards, chip packages, and keyboards (potentially used in finished products). At any stage from the conceptual model to the final enlarged model, electronics, semiconductors, and communication / data transmission products also include a prototype component. The prototype may or may not contain the actual components planned in the finished product, and to eliminate the initial impact on other components during initial testing, the prototype will have some components constructed from composite materials. A method for forming a uniform film or layer on a component surface or for forming a component includes: a) providing a self-aligned sputtering target 400; b) providing a surface 410; c) separating the surface from the self-aligning sputtering target 420 — placed at a distance; d) bombarding the self-collimated sputtering target with an energy source to form at least one atom 430; and then e) coating the surface with at least one atom 440 (as shown in FIG. 6). The self-collimated sputtering target includes the sputtering target 210 described in the present invention, which further includes a surface material 260 and a core material 270. The surface material 260 includes at least two dents (forming a collimated surface state). As illustrated in the present invention, the surface to be provided is any suitable surface, including a wafer, substrate, dielectric material, hard cover layer, other metal, alloy or metal composite layer, anti-reflection layer or any other suitable surface. Layered material. Self-collimating sputter leather considered in the present invention

-21 - 200305656 (18) I發明說明績頁 210與表面220之間的距離包括已用於傳統PVD實驗配置 的任何合適的距離。表面上的塗佈、層或膜也有任何適合 的或合乎需要的厚度，其範圍從一原子或分子的厚度（小 於1奈米）至數毫米厚度。 因此，拓撲地修正濺射靶的詳細實施例及應用即揭示如 上。然而，熟知本技藝人士應明白，在不背離本發明的發 明概念下，可進行許多本說明書以外的修改。因此，本發 明的主體係僅受限於申請專利範圍的精神。此外，在解釋 說明書和申請專利範圍時，所有術語應該就與本發明一致 的最廣義方式來解釋。尤其是「包含」、「構成」等詞應該 解釋為非專屬方式中的元件、組件或步驟，指出其所參考 的元件、組件或步驟可呈現或利用或與未明確參考的其他 元件、組件或步驟相結合。-21-200305656 (18) I Description of Invention The distance between the performance sheet 210 and the surface 220 includes any suitable distance that has been used in conventional PVD experimental configurations. The coating, layer or film on the surface also has any suitable or desirable thickness, ranging from the thickness of an atom or molecule (less than 1 nm) to a few millimeters. Therefore, detailed examples and applications of topologically modifying the sputtering target are disclosed above. However, those skilled in the art will appreciate that many modifications can be made outside of this specification without departing from the inventive concepts of the invention. Therefore, the main system of the present invention is limited only by the spirit of the scope of patent application. In addition, in interpreting the scope of the specification and patent application, all terms should be interpreted in the broadest manner consistent with the present invention. In particular, the words "including", "constructing" and the like should be interpreted as elements, components or steps in a non-exclusive manner, indicating that the elements, components or steps to which they refer may be presented or utilized or with other elements, components or Steps combined.

圖式 代表符號 說 明 10 濺 射 靶 20 晶 圓 /基 板 30 離 子 /原 子 路 徑 110 賤 射 靶 120 晶 圓 /基 板 130 離 子 /原 子 路 徑 140 分 離 準 直器 210 濺 射 靶 220 晶 圓 /基 板 230 離 子 /原 子 路 徑 -22- 200305656 (19) 發明說明續頁 250 微凹坑 260 表面材料 270 核心材料 280 宏觀修正Description of symbolic symbols 10 Sputtering target 20 Wafer / substrate 30 Ion / atomic path 110 Base shot target 120 Wafer / substrate 130 Ion / atomic path 140 Separation collimator 210 Sputtering target 220 Wafer / substrate 230 Ion / Atomic Path-22- 200305656 (19) Description of the invention Continued 250 Micro-pits 260 Surface material 270 Core material 280 Macro correction

-23 --twenty three -

Claims (1)

200305656 蠢、申請專利範圍 1. 一種錢射乾，其包括： 一核心材料；及 與該核心材料耦合的一表面材料，其中該表面材料 包含至少兩個凹痕，其形成一準直的形態。 2. 如申請專利範圍第1項之錢射革巴，其中該核心材料及 該表面材料包含相同的化學組件。 3. 如申請專利範圍第2項之濺射靶，其中該化學組件包 括銅、銘、鐫、鈥、#、鉛、銘化物、麵、鎂、經、 石夕、鐘、鐵或以上之化合物、组合。 4. 如申請專利範圍第3項之濺射靶，其中該組件包括銅 、銘、鎢、鈥、锆、姑、短、銘化物或以上之化合物 組合。 5. 如申請專利範圍第1項之滅射把，其中該至少兩個凹 痕包含一宏觀修正。 6. 如申請專利範圍第5項之濺射靶，其中該宏觀修正包 含一圓形波輪靡。 7. 如申請專利範圍第1項之濺射靶，其中該至少兩個凹 痕包含至少一微凹坑。 8. 如申請專利範圍第7項之濺射靶，其中該至少一微凹 坑包含一圓形封閉環形開口。 9. 如申請專利範圍第7項之濺射靶，其中該至少一微凹 坑包含一六邊形的封閉環形開口。 10. 如申請專利範圍第1項之錢射#巴，其中該至少兩個凹 200305656 申請專利範圍續頁 痕包含一宏觀修正及至少一微凹坑。 11. 一種形成一自準直濺射靶的方法，其方法包括： 提供一核心材料； 提供一表面材料； 將該核心材料及該表面材料耦合以形成一減:射把； 及 在該表面材料形成至少兩個蓄意形成的凹痕，其中 該些凹痕形成一準直的形態。 12. 如申請專利範圍第11項之方法，其中提供該核心材料 及提供該表面材料包括提供相同的化學組件。 13. 如申請專利範圍第12項之方法，其中該化學組件包括 銅、鋁、鎢、鈦、錐、鈷、鋁化物、妲、鎂、鋰、矽 、疑、鐵或以上之化合物組合。 14. 如申請專利範圍第13項之方法，其中該組件包括銅、 鋁、鎢、鈦、鈷、鋰、鋁化物或以上之化合物組合。 15. 如申請專利範圍第11項之方法，其中在該表面材料形 成至少兩個蓄意形成的凹痕包括形成一宏觀修正。 16. 如申請專利範圍第11項之方法，其中在該表面材料形 成至少兩個蓄意形成的凹痕包括形成一圓形波輪廓。 17. 如申請專利範圍第11項之方法，其中在該表面材料形 成至少兩個蓄意形成的凹痕包括形成至少一微凹坑。 18. 如申請專利範圍第17項之方法，其中形成該至少一微 凹坑包括形成一圓形的封閉環形開口。 19.如申請專利範圍第17項之方法，其中形成該至少一微 200305656 _ 申請專利範圍續頁 凹坑包括形成一六邊形的封閉環形開口。 20. 如申請專利範圍第11項之方法，其中在該表面材料形 成至少兩個蓄意形成的凹痕包括形成一宏觀修正及至 少一微凹坑。 21. —種在一表面上形成一均勻膜之方法，其方法包括： 提供一自準直濺射靶； 提供一表面； 將該表面在離該自準直之濺射靶一距離處放置； 用一能量源轟擊該自準直的濺射靶以形成至少一原 子，及 用該至少一原子塗佈該表面。 22. —種使用如申請專利範圍第11項濺射靶所形成之膜。 23. —種使用如申請專利範圍第21項方法所形成之膜。 24. —種使用如申請專利範圍第11項濺射靶所形成之組件。 25. —種組件，其所併入之一膜係使用如申請專利範圍第 21項之方法所形成。 26. —種使用如申請專利範圍第11項濺射靶所形成之電容 器。 27. —種電容器，其所併入之一膜係使用如申請專利範圍 第21項之方法所形成。200305656 Stupid, patent application scope 1. A money shot dry, comprising: a core material; and a surface material coupled to the core material, wherein the surface material includes at least two dents, which form a collimated form. 2. In the case of Qiansheba, the scope of the patent application, the core material and the surface material contain the same chemical components. 3. If the sputtering target of item 2 of the patent application scope, wherein the chemical component includes copper, indium, osmium, ', #, lead, inscription, surface, magnesium, warp, stone evening, bell, iron or above compounds ,combination. 4. The sputtering target of item 3 in the patent application scope, wherein the component includes copper, copper, tungsten, copper, copper, copper, copper, copper, copper, copper, copper, zinc, zirconium, zirconia, short, metal, or a combination of the above compounds. 5. As described in the scope of patent application, the at least two dents include a macro correction. 6. The sputtering target of item 5 of the patent application, wherein the macro correction includes a circular wave wheel. 7. The sputtering target according to item 1 of the patent application, wherein the at least two dimples include at least one micro dimple. 8. The sputtering target according to item 7 of the patent application, wherein the at least one micro-pit includes a circular closed annular opening. 9. The sputtering target according to item 7 of the patent application, wherein the at least one micro-pit comprises a hexagonal closed annular opening. 10. For example, in the scope of patent application No. 1 Qianshe #bar, wherein the at least two dimples 200305656 patent application scope continuation marks include a macro correction and at least one micro dimple. 11. A method of forming a self-collimated sputtering target, the method comprising: providing a core material; providing a surface material; coupling the core material and the surface material to form a minus: a torch; and on the surface material At least two intentionally formed dimples are formed, wherein the dimples form a collimated morphology. 12. The method as claimed in claim 11 wherein providing the core material and providing the surface material includes providing the same chemical components. 13. The method of claim 12 wherein the chemical component comprises copper, aluminum, tungsten, titanium, cone, cobalt, aluminide, hafnium, magnesium, lithium, silicon, silicon, iron, or a combination thereof. 14. The method of claim 13 in which the component comprises copper, aluminum, tungsten, titanium, cobalt, lithium, aluminide, or a combination thereof. 15. The method according to item 11 of the patent application, wherein forming at least two intentionally formed dents on the surface material includes forming a macro correction. 16. The method of claim 11, wherein forming at least two intentionally formed dents on the surface material includes forming a circular wave profile. 17. The method of claim 11 in which the forming of at least two intentionally formed dents on the surface material includes forming at least one micro-pit. 18. The method of claim 17 wherein forming the at least one micro-pit includes forming a circular closed annular opening. 19. The method according to item 17 of the scope of patent application, wherein the at least one micro area is formed. 200305656 _ The scope of patent application continued page The pit includes a closed annular opening forming a hexagon. 20. The method of claim 11 wherein the formation of at least two intentionally formed dents on the surface material includes the formation of a macro correction and at least one micro-pit. 21. A method of forming a uniform film on a surface, the method comprising: providing a self-aligned sputtering target; providing a surface; placing the surface at a distance from the self-aligned sputtering target; using An energy source bombards the self-collimated sputtering target to form at least one atom, and coats the surface with the at least one atom. 22. A film formed using a sputtering target such as the item 11 in the scope of patent application. 23.-A film formed using the method described in the 21st patent application. 24. A component formed by using a sputtering target such as the item 11 in the scope of patent application. 25. A module in which one of the incorporated membranes is formed using a method as described in item 21 of the scope of patent application. 26. A capacitor formed using a sputtering target such as the item 11 in the scope of patent application. 27. A capacitor in which one of the incorporated films is formed using a method as described in the scope of patent application No. 21.