CN103813642B - Method for forming conductive circuit on insulated metal substrate - Google Patents
Method for forming conductive circuit on insulated metal substrate Download PDFInfo
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- CN103813642B CN103813642B CN201310549187.6A CN201310549187A CN103813642B CN 103813642 B CN103813642 B CN 103813642B CN 201310549187 A CN201310549187 A CN 201310549187A CN 103813642 B CN103813642 B CN 103813642B
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- metal substrate
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- high heat
- copper
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Abstract
The invention discloses a method for forming a conductive circuit on an insulated metal substrate. The method sequentially comprises the flowing steps of: 1, providing the metal substrate, performing surface roughening process to the metal substrate; 2, depositing high thermal conductive insulated coating on the metal substrate, and thus forming the insulated metal substrate; 3, depositing a metallic oxide nanoparticle layer on the high thermal conductive insulated coating, and then irradiating the metallic oxide nanoparticles by ultraviolet laser so as to activate the metallic oxide nanoparticles; 4, coating metallic copper on the surface of the insulated metal substrate in a sputtering manner; 5, printing the conductive circuit on the surface of the insulated metal substrate which has been subjected to the sputtering coating of copper, and thus forming the insulated metal substrate with the conductive circuit.
Description
Technical field
The invention belongs to circuit board manufacturing area, relate in particular to one kind and existed by ultraviolet light and sputtering process
The method that conducting wire is formed on insulating metal substrate.
Background technology
Circuit board is requisite circuit structure carrier in modern industry, and traditional circuit board typically all adopts insulation base
On plate, the mode of bonding Copper Foil is forming.The heat conductivility of this traditional circuit board is poor, is unfavorable for the electronics on circuit board
The radiating of components and parts, is therefore easily caused fault.Later, the preferable circuit board of heat conductivility, this circuit board are occurred in that in the industry
Typically all adopt insulating heat-conductive substrate, for original insulated substrate, its heat conductivility makes moderate progress.But current industry
The requirement more and more higher of bound pair insulating heat-conductive circuit board, therefore, existing insulating heat-conductive circuit board can not meet need gradually
Ask.And, existing insulating heat-conductive substrate all to be formed by the way of direct copper plating on insulating heat-conductive substrate, and metallic copper
Combination with insulating heat-conductive substrate is generally all made us less being satisfied with.Due to metallic copper be combined with insulating heat-conductive substrate not good, easily
The copper lines resulting in tilt, thus leading to the problem of short circuit or open circuit.Meanwhile, prior art is by insulating heat-conductive
On substrate, the mode of electroless copper is forming copper conductive layer.But this method due to using electroless copper it is therefore desirable to consume big
The chemical agent of amount, this equally brings very detrimental effect to environmental conservation.
List of references cn101572993a discloses vacuum splashing and plating on a kind of insulated heat-conducting metal substrate and forms conducting wire
Method, in the method, its by way of vacuum splashing and plating on insulated heat-conducting metal substrate formed metal conducting layer, and with
This is forming conducting wire.Although method disclosed in the document avoids forms copper conductive traces using the mode of electroless copper
Layer, but in the method, metal conducting layer directly by sputter in high heat conduction coating, and high heat conduction coating is by insulant group
Become, this mode equally faces the metal conducting layer problem bad with the binding ability of high heat conductive insulating layer.Therefore, list of references
The 1 tilting problem that not can solve metal conducting layer (namely copper plate).
Content of the invention:
In view of this, the present invention proposes a kind of method forming conducting wire on insulating metal substrate, by the party
Method, except the binding ability of conducting wire and insulating metal substrate can be strengthened, so that beyond avoiding the tilting of copper conductive traces,
Also it is avoided that to form copper conductive traces by the way of electroless copper, thus being more beneficial for reducing the use of chemical reagent, have
Beneficial to environmental conservation.
Specifically, method proposed by the present invention, first, is surface-treated so that metal basal board to metal basal board
Rough surface；Then, deposit high heat conductive insulating coating on metallic substrates；Then, gold is deposited on high heat conductive insulating coating
Belong to oxide nanoparticle layers, by Ultra-Violet Laser, this metal oxide nanoparticles is irradiated, thus metal is aoxidized
Thing nano-particle carries out activation processing；Then, the substrate surface after activated process carries out sputter, thus forming copper sputter
Layer；Hereafter, anti-etching thin film is coated on copper sputtered layer, forms conducting wire pattern through exposure and development afterwards non-conductive to expose
Land；Finally, the copper sputtered layer on non-conductive land is performed etching, through removing the anti-quarter on conducting wire pattern
After erosion thin film, conducting wire is formed on insulating metal substrate.
Be can be seen that by the method proposed by the present invention and received by Ultra-Violet Laser activated metal oxide due to the present invention
Rice grain and insulated substrate surface obtain metallic atom, by the combination of metallic atom and metallic copper, such that it is able to strengthen gold
Belong to the bond strength of copper and high heat conductive insulating coating on insulating metal substrate, the copper being additionally, since in high heat conductive insulating coating is led
Electric line is to be formed by way of sputter, therefore avoids the process of electroless copper, also just eliminates in a large number using chemistry
Reagent carries out the technique of electroless copper, this safer and environmental protection for prior art.
The method that conducting wire is formed on insulating metal substrate proposed by the present invention, its concrete steps includes successively:
Specific embodiment:
Below by specific embodiment, the present invention is described in detail.
The method forming conducting wire on insulating metal substrate proposed by the present invention in turn includes the following steps:
(1) provide metal basal board, metal basal board be surface-treated, specifically by metal basal board be placed into etc. from
In daughter reaction chamber, bombardment processing is carried out to the surface of metal basal board by plasma, so that metallic substrate surfaces quilt
Roughening；Wherein, metal basal board can be copper base, aluminium base or albronze substrate, magnalium substrate, nickel
Titanium alloy substrate；
(2) deposit high heat conductive insulating coating on metallic substrates, thus forming insulating metal substrate；Described high heat conductive insulating
Coating is to be matrix using epoxy resin, is formed by adding the filler with high heat conductance；Wherein, the filler of high heat conductance
For: silicon nitride, boron nitride, silicon dioxide and aluminium oxide；Wherein, in percentage by weight, the content of epoxy resin is
40wt%, the filler of high heat conductance is 60wt%, and, silicon nitride pressed by the filler of high heat conductance: boron nitride: silicon dioxide: oxidation
Aluminum to be constituted for 5:5:2:2；
(3) depositing metal oxide nano-particle layer in high heat conductive insulating coating, by Ultra-Violet Laser to this metal oxygen
Compound nano-particle is irradiated, thus metal oxide nanoparticles are carried out activation processing；Metal oxide nanoparticles
After UV light, it will metallic atom, such as aluminum oxide nanoparticle warp are stayed on the surface of insulating metal substrate
After UV light, oxygen will disengage, and leaves aluminium atom on insulating metal substrate.Other metal-oxides are received
Rice grain, its activation process is same；Metal oxide nanoparticles can be titanium oxide, zinc oxide, aluminium oxide, oxidation
The nano-particle such as stannum, chromium oxide, or, it would however also be possible to employ metal nitride nano-particle replaces metal oxide nanoparticles,
The such as nano-particle such as aluminium nitride, titanium nitride；For the particle diameter of metal oxide nanoparticles, do not do special in the present invention
Limit, but consider, currently preferred particle size range is 100 nanometers to 500 nanometers, more preferably from economy and effectiveness synthesis
Scope is 200 nanometers to 350 nanometers；Wherein, Ultra-Violet Laser is: wavelength is the fluorine krypton laser of 248nm, and its irradiation energy is
180mj/cm2, or the xenon chlorine laser for 308nm for the wavelength, its irradiation energy is 210mj/cm2, or the nitrogen for 337nm for the wavelength
Laser, irradiation energy is 240mj/cm2；
(4) in insulating metal substrate surface jet-plating metallization copper by way of sputter, thus forming copper sputtered layer；Specifically
Technical process is: insulating metal substrate is placed into vacuum splashing and plating intracavity, by vacuum splashing and plating chamber evacuation in airtight environment,
When being evacuated to 5 × 10-6After torr, it is passed through noble gases so that vacuum chamber is maintained at 5 × 10-4In the environment of torr, start sputter
Copper target material carries out copper facing to insulating metal substrate, when the copper thickness of institute's sputter is in the range of 5-30 micron, terminates sputter
Technique；In actual applications, can select different copper thicknesses for different situations, such as 15 microns, 20 microns, 25
Micron.
(5) carry out conducting wire printing on the surface completing to splash copper-plated insulating metal substrate, for example with anti-etching
Thin film coated, on the surface of monoblock insulating metal substrate, then passes through the table in insulating metal substrate for the steps such as exposure, development
The region needing to form conducting wire is defined on face, is then removed non-on insulating metal substrate surface by way of etching
Conductive region, thus form the insulating metal substrate with conducting wire.
Further, between step (1) and (2), can regard concrete condition increases first time cleaning step, for example, pass through
The methods such as deionized water rinsing, cleaned by ultrasonic vibration are carried out to the pollutant of metallic substrate surfaces, pass through clean after cleaning
Net hot blast is dried process to metal basal board；
Further, between step (3) and (4), the insulating metal substrate obtaining can be placed into after step (3)
In plasm reaction cavity, by plasma, insulating metal substrate surface is bombarded, with to insulating metal substrate surface
On erode, thus forming coarse surface.When to take the step of plasma bombardment be for next step sputter copper, enter one
Step strengthens the bond strength of copper and insulating metal substrate surface；
Further, after insulating metal substrate surface being bombarded by plasma, concrete condition can be regarded
Increase the cleaning step of insulating metal substrate, for example, pass through the method such as deionized water rinsing, cleaned by ultrasonic vibration to insulation gold
The pollutant belonging to substrate surface are carried out, and are dried process by clean hot blast to insulating metal substrate after cleaning；
Further, between step (4) and (5), heat treated can also be carried out to completing to splash copper-plated insulated substrate,
Thus further enhancing the bond strength of Copper Foil and insulated substrate surface.
Embodiment of above is described in detail to the present invention, but above-mentioned embodiment is not intended to limit this
The scope of invention, protection scope of the present invention is defined by the appended claims.
Claims (2)
1. a kind of on insulating metal substrate formed conducting wire method it is characterised in that: methods described includes as follows successively
Step:
(1) provide metal basal board, rough surface process is carried out to metal basal board；
(2) deposit high heat conductive insulating coating on metallic substrates, thus forming insulating metal substrate；
(3) depositing metal oxide nano-particle layer in high heat conductive insulating coating, then passes through Ultra-Violet Laser to this metal oxygen
Compound nano-particle is irradiated, with activated metal oxide nano particles；
(4) in insulating metal substrate surface jet-plating metallization copper by way of sputter；
(5) conducting wire printing is carried out on the surface completing to splash copper-plated insulating metal substrate, to be formed, there is conducting wire
Insulating metal substrate；
Wherein, described high heat conductive insulating coating is to be matrix using epoxy resin, by add the filler with high heat conductance Lai
Formed；
Wherein, the filler of high heat conductance is: silicon nitride, boron nitride, silicon dioxide and aluminium oxide；Wherein, according to weight percent
Ratio meter, the content of epoxy resin is 40wt%, and the filler of high heat conductance is 60wt%, and, nitridation pressed by the filler of high heat conductance
Silicon: boron nitride: silicon dioxide: aluminium oxide to be constituted for 5:5:2:2；
Wherein, metal oxide nanoparticles are titanium oxide, zinc oxide, aluminium oxide, stannum oxide, chromium oxide nano-particle；Described
The particle diameter of metal oxide nanoparticles is 100 nanometers to 500 nanometers.
2. the method for claim 1 it is characterised in that:
Wherein, carry out cleaning, by deionized water rinsing or cleaned by ultrasonic vibration pair for the first time between step (1) and (2)
The pollutant of metallic substrate surfaces are carried out, and are dried process by clean hot blast to metal basal board after cleaning；
Wherein, between step (3) and (4), insulating metal substrate is placed in plasm reaction cavity, by plasma
Insulating metal substrate surface is bombarded, to erode to insulating metal substrate surface, thus forming coarse surface, this
Afterwards, insulating metal substrate is carried out with second cleaning, cleaning method and first time clean identical；
Wherein, between step (4) and (5), carry out heat treated to completing to splash copper-plated insulated substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549187.6A CN103813642B (en) | 2013-11-07 | 2013-11-07 | Method for forming conductive circuit on insulated metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549187.6A CN103813642B (en) | 2013-11-07 | 2013-11-07 | Method for forming conductive circuit on insulated metal substrate |
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| CN103813642A CN103813642A (en) | 2014-05-21 |
| CN103813642B true CN103813642B (en) | 2017-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310549187.6A Active CN103813642B (en) | 2013-11-07 | 2013-11-07 | Method for forming conductive circuit on insulated metal substrate |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105007692A (en) * | 2015-06-26 | 2015-10-28 | 柯志明 | Method of manufacturing circuit on sheet metal |
| CN106995641B (en) * | 2017-04-25 | 2019-04-05 | 晶锋集团股份有限公司 | A kind of epoxy resin-matrix heat conductive insulating coating and preparation method thereof that epoxy group polyhedral silsesquioxane is modified |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4853252A (en) * | 1986-12-17 | 1989-08-01 | Siemens Aktiengesellschaft | Method and coating material for applying electrically conductive printed patterns to insulating substrates |
| CN101873768A (en) * | 2010-05-28 | 2010-10-27 | 中山大学 | Method for preparing printing electron by adopting catalytic type nano particles |
| CN102071412A (en) * | 2010-04-14 | 2011-05-25 | 比亚迪股份有限公司 | Plastic product and preparation method thereof |
| CN102740604A (en) * | 2012-07-12 | 2012-10-17 | 苏州衡业新材料科技有限公司 | Method for manufacturing insulating metal base plate of electronic circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2822167B1 (en) * | 2001-03-15 | 2004-07-16 | Nexans | METHOD FOR METALLIZING A SUBSTRATE PART |
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- 2013-11-07 CN CN201310549187.6A patent/CN103813642B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4853252A (en) * | 1986-12-17 | 1989-08-01 | Siemens Aktiengesellschaft | Method and coating material for applying electrically conductive printed patterns to insulating substrates |
| CN102071412A (en) * | 2010-04-14 | 2011-05-25 | 比亚迪股份有限公司 | Plastic product and preparation method thereof |
| CN101873768A (en) * | 2010-05-28 | 2010-10-27 | 中山大学 | Method for preparing printing electron by adopting catalytic type nano particles |
| CN102740604A (en) * | 2012-07-12 | 2012-10-17 | 苏州衡业新材料科技有限公司 | Method for manufacturing insulating metal base plate of electronic circuit |
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| CN103813642A (en) | 2014-05-21 |
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Effective date of registration: 20170726 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |