SU1829751A1 - Process of manufacture of sensitive element of semiconductor gas sensor - Google Patents
Process of manufacture of sensitive element of semiconductor gas sensorInfo
- Publication number
- SU1829751A1 SU1829751A1 SU4945733/25A SU4945733A SU1829751A1 SU 1829751 A1 SU1829751 A1 SU 1829751A1 SU 4945733/25 A SU4945733/25 A SU 4945733/25A SU 4945733 A SU4945733 A SU 4945733A SU 1829751 A1 SU1829751 A1 SU 1829751A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- sensitive element
- manufacture
- gas sensor
- semiconductor gas
- porous layer
- Prior art date
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
FIELD: electronics. SUBSTANCE: invention refers to manufacture of sensitive element of semiconductor gas sensor based on porous silicon. Porous layer of sensitive element is formed on high-resistance silicon substrate of p type of conductance by treatment in HF-containing electrolyte. Porous layer is then tinsed in boiling deionized water, dried and dry etching is conducted in plasma of high-frequency discharge in gas atmosphere with partial pressure of component (Pa):freon-14 40-42; oxygen 21-25; argon 1-5 and density of discharge power 0.05-0.5 W/cu.cm for the course of 1.5-15.0 min. Later metal is deposited through contact mask. EFFECT: increased sensitivity of element. 1 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4945733/25A SU1829751A1 (en) | 1991-06-17 | 1991-06-17 | Process of manufacture of sensitive element of semiconductor gas sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4945733/25A SU1829751A1 (en) | 1991-06-17 | 1991-06-17 | Process of manufacture of sensitive element of semiconductor gas sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1829751A1 true SU1829751A1 (en) | 1996-08-27 |
Family
ID=60541327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4945733/25A SU1829751A1 (en) | 1991-06-17 | 1991-06-17 | Process of manufacture of sensitive element of semiconductor gas sensor |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1829751A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU721781B2 (en) * | 1997-12-26 | 2000-07-13 | Canon Kabushiki Kaisha | Substrate processing method and apparatus and Soi substrate |
RU2449412C1 (en) * | 2010-12-20 | 2012-04-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Method for manufacturing multipurpose gas composition sensors |
RU2661611C1 (en) * | 2017-12-06 | 2018-07-17 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) | Method of creating a sensor element on the basis of the microresonator of porous silicon for the detection of explosive vapors |
-
1991
- 1991-06-17 SU SU4945733/25A patent/SU1829751A1/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU721781B2 (en) * | 1997-12-26 | 2000-07-13 | Canon Kabushiki Kaisha | Substrate processing method and apparatus and Soi substrate |
RU2449412C1 (en) * | 2010-12-20 | 2012-04-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Method for manufacturing multipurpose gas composition sensors |
RU2661611C1 (en) * | 2017-12-06 | 2018-07-17 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) | Method of creating a sensor element on the basis of the microresonator of porous silicon for the detection of explosive vapors |
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