SU1829751A1 - Process of manufacture of sensitive element of semiconductor gas sensor - Google Patents

Process of manufacture of sensitive element of semiconductor gas sensor

Info

Publication number
SU1829751A1
SU1829751A1 SU4945733/25A SU4945733A SU1829751A1 SU 1829751 A1 SU1829751 A1 SU 1829751A1 SU 4945733/25 A SU4945733/25 A SU 4945733/25A SU 4945733 A SU4945733 A SU 4945733A SU 1829751 A1 SU1829751 A1 SU 1829751A1
Authority
SU
USSR - Soviet Union
Prior art keywords
sensitive element
manufacture
gas sensor
semiconductor gas
porous layer
Prior art date
Application number
SU4945733/25A
Other languages
Russian (ru)
Inventor
В.В. Чистяков
В.Н. Палашов
Н.Е. Мокроусов
А.Л. Винке
Original Assignee
Институт микроэлектроники АН СССР
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт микроэлектроники АН СССР filed Critical Институт микроэлектроники АН СССР
Priority to SU4945733/25A priority Critical patent/SU1829751A1/en
Application granted granted Critical
Publication of SU1829751A1 publication Critical patent/SU1829751A1/en

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

FIELD: electronics. SUBSTANCE: invention refers to manufacture of sensitive element of semiconductor gas sensor based on porous silicon. Porous layer of sensitive element is formed on high-resistance silicon substrate of p type of conductance by treatment in HF-containing electrolyte. Porous layer is then tinsed in boiling deionized water, dried and dry etching is conducted in plasma of high-frequency discharge in gas atmosphere with partial pressure of component (Pa):freon-14 40-42; oxygen 21-25; argon 1-5 and density of discharge power 0.05-0.5 W/cu.cm for the course of 1.5-15.0 min. Later metal is deposited through contact mask. EFFECT: increased sensitivity of element. 1 dwg
SU4945733/25A 1991-06-17 1991-06-17 Process of manufacture of sensitive element of semiconductor gas sensor SU1829751A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4945733/25A SU1829751A1 (en) 1991-06-17 1991-06-17 Process of manufacture of sensitive element of semiconductor gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4945733/25A SU1829751A1 (en) 1991-06-17 1991-06-17 Process of manufacture of sensitive element of semiconductor gas sensor

Publications (1)

Publication Number Publication Date
SU1829751A1 true SU1829751A1 (en) 1996-08-27

Family

ID=60541327

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4945733/25A SU1829751A1 (en) 1991-06-17 1991-06-17 Process of manufacture of sensitive element of semiconductor gas sensor

Country Status (1)

Country Link
SU (1) SU1829751A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU721781B2 (en) * 1997-12-26 2000-07-13 Canon Kabushiki Kaisha Substrate processing method and apparatus and Soi substrate
RU2449412C1 (en) * 2010-12-20 2012-04-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Method for manufacturing multipurpose gas composition sensors
RU2661611C1 (en) * 2017-12-06 2018-07-17 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Method of creating a sensor element on the basis of the microresonator of porous silicon for the detection of explosive vapors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU721781B2 (en) * 1997-12-26 2000-07-13 Canon Kabushiki Kaisha Substrate processing method and apparatus and Soi substrate
RU2449412C1 (en) * 2010-12-20 2012-04-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Method for manufacturing multipurpose gas composition sensors
RU2661611C1 (en) * 2017-12-06 2018-07-17 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Method of creating a sensor element on the basis of the microresonator of porous silicon for the detection of explosive vapors

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