SG50524A1 - Semiconductor device having anti-reflective coating and method for making the same - Google Patents

Semiconductor device having anti-reflective coating and method for making the same

Info

Publication number
SG50524A1
SG50524A1 SG1996003711A SG1996003711A SG50524A1 SG 50524 A1 SG50524 A1 SG 50524A1 SG 1996003711 A SG1996003711 A SG 1996003711A SG 1996003711 A SG1996003711 A SG 1996003711A SG 50524 A1 SG50524 A1 SG 50524A1
Authority
SG
Singapore
Prior art keywords
making
semiconductor device
same
reflective coating
reflective
Prior art date
Application number
SG1996003711A
Other languages
English (en)
Inventor
Papu D Maniar
Robert W Fiordalice
Kevin G Kemp
Bernard J Roman
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG50524A1 publication Critical patent/SG50524A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG1996003711A 1995-02-24 1996-02-22 Semiconductor device having anti-reflective coating and method for making the same SG50524A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/393,781 US5525542A (en) 1995-02-24 1995-02-24 Method for making a semiconductor device having anti-reflective coating

Publications (1)

Publication Number Publication Date
SG50524A1 true SG50524A1 (en) 1998-07-20

Family

ID=23556225

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996003711A SG50524A1 (en) 1995-02-24 1996-02-22 Semiconductor device having anti-reflective coating and method for making the same

Country Status (4)

Country Link
US (1) US5525542A (ja)
JP (1) JPH08255752A (ja)
KR (1) KR100495960B1 (ja)
SG (1) SG50524A1 (ja)

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US5976769A (en) * 1995-07-14 1999-11-02 Texas Instruments Incorporated Intermediate layer lithography
KR100434132B1 (ko) * 1995-07-14 2004-09-08 텍사스 인스트루먼츠 인코포레이티드 중간층리쏘그래피
KR100434133B1 (ko) * 1995-07-14 2004-08-09 텍사스 인스트루먼츠 인코포레이티드 중간층리쏘그래피
US5702981A (en) * 1995-09-29 1997-12-30 Maniar; Papu D. Method for forming a via in a semiconductor device
US5877557A (en) * 1996-04-01 1999-03-02 Raytheon Company Low temperature aluminum nitride
US5759916A (en) * 1996-06-24 1998-06-02 Taiwan Semiconductor Manufacturing Company Ltd Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer
US5804088A (en) * 1996-07-12 1998-09-08 Texas Instruments Incorporated Intermediate layer lithography
US6060385A (en) * 1997-02-14 2000-05-09 Micro Technology, Inc. Method of making an interconnect structure
US6017816A (en) * 1997-02-25 2000-01-25 Mosel Vitelic Inc. Method of fabricating A1N anti-reflection coating on metal layer
US6930028B1 (en) * 1997-06-09 2005-08-16 Texas Instruments Incorporated Antireflective structure and method
US5926740A (en) * 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
US5776821A (en) * 1997-08-22 1998-07-07 Vlsi Technology, Inc. Method for forming a reduced width gate electrode
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6291356B1 (en) 1997-12-08 2001-09-18 Applied Materials, Inc. Method for etching silicon oxynitride and dielectric antireflection coatings
US6090694A (en) * 1997-12-16 2000-07-18 Advanced Micro Devices, Inc. Local interconnect patterning and contact formation
US6184073B1 (en) 1997-12-23 2001-02-06 Motorola, Inc. Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region
TW350099B (en) * 1998-01-26 1999-01-11 United Microelectronics Corp IC microfilm process
US6297170B1 (en) 1998-06-23 2001-10-02 Vlsi Technology, Inc. Sacrificial multilayer anti-reflective coating for mos gate formation
KR100333724B1 (ko) 1998-06-30 2002-09-17 주식회사 하이닉스반도체 티타늄알루미늄나이트라이드반사방지막을이용한반도체소자의금속배선형성방법
US6444584B1 (en) 1998-07-16 2002-09-03 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming composite silicon/dielectric/silicon stack layer
KR100324591B1 (ko) 1998-12-24 2002-04-17 박종섭 티타늄 알루미늄 질소 합금막을 상부전극의 확산방지막으로서 이용하는 캐패시터 제조 방법
KR100504430B1 (ko) 1998-12-30 2006-05-17 주식회사 하이닉스반도체 플러그를갖는커패시터의하부전극형성방법
KR100371142B1 (ko) 1998-12-30 2003-03-31 주식회사 하이닉스반도체 반도체소자의캐패시터형성방법
KR100881472B1 (ko) 1999-02-04 2009-02-05 어플라이드 머티어리얼스, 인코포레이티드 소정 기판 상에 놓여져 있는 패턴화된 마스크 표면 위로 적층 구조물을 증착하기 위한 방법
US6410210B1 (en) * 1999-05-20 2002-06-25 Philips Semiconductors Semiconductor blocking layer for preventing UV radiation damage to MOS gate oxides
US6355979B2 (en) * 1999-05-25 2002-03-12 Stmicroelectronics, Inc. Hard mask for copper plasma etch
US6214721B1 (en) * 1999-05-27 2001-04-10 National Semiconductor Corp. Method and structure for suppressing light reflections during photolithography exposure steps in processing integrated circuit structures
US6294465B1 (en) * 1999-10-29 2001-09-25 Agere Systems Guardian Corp. Method for making integrated circuits having features with reduced critical dimensions
US6221761B1 (en) * 1999-12-20 2001-04-24 United Microelectronics Corp. Method of stabilizing anti-reflection coating layer
US6605543B1 (en) * 1999-12-30 2003-08-12 Koninklijke Philips Electronics N.V. Process to control etch profiles in dual-implanted silicon films
JP2002075965A (ja) * 2000-08-25 2002-03-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
US6465297B1 (en) 2000-10-05 2002-10-15 Motorola, Inc. Method of manufacturing a semiconductor component having a capacitor
ITMI20020931A1 (it) * 2002-05-02 2003-11-03 St Microelectronics Srl Metodo per fabbricare circuiti elettronici integrati su un substrato semiconduttore
US7183120B2 (en) * 2002-10-31 2007-02-27 Honeywell International Inc. Etch-stop material for improved manufacture of magnetic devices
US20070007531A1 (en) * 2005-07-08 2007-01-11 Ho Kwak S Semiconductor device and manufacturing method thereof
KR100730224B1 (ko) * 2006-08-01 2007-06-19 삼성에스디아이 주식회사 유기발광 표시장치
KR100755147B1 (ko) * 2006-08-31 2007-09-04 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100840641B1 (ko) * 2006-11-07 2008-06-24 동부일렉트로닉스 주식회사 반도체 소자 형성 방법
KR100845004B1 (ko) * 2007-04-30 2008-07-09 삼성전자주식회사 나노 갭을 갖는 금속막 패턴의 형성 방법 및 이를 이용한분자크기의 소자 제조 방법
US20090047791A1 (en) * 2007-08-16 2009-02-19 International Business Machines Corporation Semiconductor etching methods
JP2010165943A (ja) * 2009-01-16 2010-07-29 Renesas Electronics Corp 半導体装置の製造方法およびウェハ処理システム
WO2011103562A1 (en) * 2010-02-22 2011-08-25 University Of Houston Neutral particle nanopatterning for nonplanar multimodal neural probes
US9986914B2 (en) 2013-05-24 2018-06-05 University Of Houston System Method of fabricating a probe
US9761489B2 (en) * 2013-08-20 2017-09-12 Applied Materials, Inc. Self-aligned interconnects formed using substractive techniques
US9837306B2 (en) * 2015-12-21 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure and manufacturing method thereof
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法

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JPS62169446A (ja) * 1986-01-22 1987-07-25 Hitachi Micro Comput Eng Ltd 半導体装置とその製造方法
JPS63143819A (ja) * 1986-12-06 1988-06-16 Sony Corp 半導体装置の製造方法
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JPH01223750A (ja) * 1988-03-02 1989-09-06 Nec Corp 半導体装置
JPH01241125A (ja) * 1988-03-23 1989-09-26 Sony Corp 半導体装置の製造方法
US5126289A (en) * 1990-07-20 1992-06-30 At&T Bell Laboratories Semiconductor lithography methods using an arc of organic material
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
JPH06267842A (ja) * 1993-03-12 1994-09-22 Matsushita Electric Ind Co Ltd 微細パターン形成方法
US5378659A (en) * 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate

Also Published As

Publication number Publication date
JPH08255752A (ja) 1996-10-01
KR960032587A (ko) 1996-09-17
KR100495960B1 (ko) 2005-11-22
US5525542A (en) 1996-06-11

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