SG36587G - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
SG36587G
SG36587G SG365/87A SG36587A SG36587G SG 36587 G SG36587 G SG 36587G SG 365/87 A SG365/87 A SG 365/87A SG 36587 A SG36587 A SG 36587A SG 36587 G SG36587 G SG 36587G
Authority
SG
Singapore
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
SG365/87A
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG36587G publication Critical patent/SG36587G/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
SG365/87A 1982-01-25 1987-04-23 Semiconductor integrated circuit device SG36587G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008932A JPS58127363A (en) 1982-01-25 1982-01-25 Semiconductor ic device

Publications (1)

Publication Number Publication Date
SG36587G true SG36587G (en) 1987-07-24

Family

ID=11706432

Family Applications (1)

Application Number Title Priority Date Filing Date
SG365/87A SG36587G (en) 1982-01-25 1987-04-23 Semiconductor integrated circuit device

Country Status (9)

Country Link
JP (1) JPS58127363A (en)
KR (1) KR910002036B1 (en)
DE (1) DE3302206A1 (en)
FR (1) FR2520555B1 (en)
GB (2) GB2113915B (en)
HK (2) HK70687A (en)
IT (1) IT1160470B (en)
MY (1) MY8700613A (en)
SG (1) SG36587G (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3926011B2 (en) 1997-12-24 2007-06-06 株式会社ルネサステクノロジ Semiconductor device design method
JP4292668B2 (en) * 2000-01-31 2009-07-08 富士ゼロックス株式会社 Light emitting thyristor array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
DE1949484B2 (en) * 1969-10-01 1978-02-23 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithic integrated circuit conductive tracks intersection - has low ohmic electrode region of one integrated component longitudinally extended and containing terminal contacts
FR2244262B1 (en) * 1973-09-13 1978-09-29 Radiotechnique Compelec
DE2514466B2 (en) * 1975-04-03 1977-04-21 Ibm Deutschland Gmbh, 7000 Stuttgart INTEGRATED SEMI-CONDUCTOR CIRCUIT
JPS5264830A (en) * 1975-11-25 1977-05-28 Hitachi Ltd Power source supply system of integrated injection logical circuit
NL7700420A (en) * 1977-01-17 1978-07-19 Philips Nv SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
DE3143565A1 (en) * 1981-11-03 1983-05-11 International Microcircuits Inc., 95051 Santa Clara, Calif. Integrated circuit

Also Published As

Publication number Publication date
IT8319236A0 (en) 1983-01-21
KR910002036B1 (en) 1991-03-30
MY8700613A (en) 1987-12-31
KR840003536A (en) 1984-09-08
IT1160470B (en) 1987-03-11
HK71287A (en) 1987-10-09
DE3302206A1 (en) 1983-08-04
GB8301731D0 (en) 1983-02-23
GB2133622A (en) 1984-07-25
JPS58127363A (en) 1983-07-29
FR2520555A1 (en) 1983-07-29
FR2520555B1 (en) 1987-02-20
GB2113915A (en) 1983-08-10
JPH0334661B2 (en) 1991-05-23
GB8403188D0 (en) 1984-03-14
HK70687A (en) 1987-10-09
GB2133622B (en) 1985-11-20
GB2113915B (en) 1985-11-20

Similar Documents

Publication Publication Date Title
GB8319848D0 (en) Semiconductor integrated circuit device
GB8324163D0 (en) Semiconductor integrated circuit device
DE3380242D1 (en) Semiconductor integrated circuit device
DE3470265D1 (en) Semiconductor integrated circuit device
DE3162416D1 (en) Semiconductor integrated circuit device
GB2087183B (en) Semiconductor integrated circuit device
DE3277855D1 (en) Semiconductor integrated circuit device
DE3278873D1 (en) Semiconductor integrated circuit device
GB8416885D0 (en) Semiconductor integrated circuit device
GB8414839D0 (en) Semiconductor integrated circuit device
GB8418407D0 (en) Semiconductor integrated circuit device
GB2152752B (en) Semiconductor integrated circuit device
EP0145497A3 (en) Semiconductor integrated circuit device
DE3475366D1 (en) Master-slice-type semiconductor integrated circuit device
GB2126782B (en) Semiconductor integrated circuit devices
GB2089611B (en) Semiconductor integrated circuit device
EP0127100A3 (en) Semiconductor integrated circuit device
GB8306917D0 (en) Semiconductor integrated circuit device
GB8431943D0 (en) Semiconductor integrated circuit device
HK46086A (en) Semiconductor integrated circuit device
GB8422520D0 (en) Semiconductor integrated circuit device
MY8600690A (en) Semiconductor integrated circuit device
DE3380105D1 (en) Semiconductor integrated circuit device
DE3380891D1 (en) Semiconductor integrated circuit
GB8502453D0 (en) Semiconductor integrated circuit device