SG143167A1 - Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution - Google Patents

Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Info

Publication number: SG143167A1
Authority: SG; Singapore
Prior art keywords: plasma; distribution; reactor; pumping; radial distribution
Prior art date: 2006-11-15

Application number

SG200717717-3A

Other languages

English (en)

Inventor

Matthew L Miller

Daniel J Hoffman

Steven C Shannon

Michael Kutney

James Carducci

Andrew Nguyen

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-11-15

Filing date

2007-11-13

Publication date

2008-06-27

2007-11-13 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2008-06-27 Publication of SG143167A1 publication Critical patent/SG143167A1/en

Links

238000005086 pumping Methods 0.000 abstract 6
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 3
230000000994 depressogenic effect Effects 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)
ing And Chemical Polishing (AREA)

SG200717717-3A 2006-11-15 2007-11-13 Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution SG143167A1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US85955806P	2006-11-15	2006-11-15
US11/751,575 US20080110567A1 (en)	2006-11-15	2007-05-21	Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Publications (1)

Publication Number	Publication Date
SG143167A1 true SG143167A1 (en)	2008-06-27

Family

ID=39047970

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG200717717-3A SG143167A1 (en)	2006-11-15	2007-11-13	Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Country Status (6)

Country	Link
US (1)	US20080110567A1 (ja)
EP (1)	EP1923901A3 (ja)
JP (1)	JP5580512B2 (ja)
KR (1)	KR100938635B1 (ja)
SG (1)	SG143167A1 (ja)
TW (1)	TWI388242B (ja)

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US20090178763A1 (en) *	2008-01-10	2009-07-16	Applied Materials, Inc.	Showerhead insulator and etch chamber liner
US8398814B2 (en)	2009-07-08	2013-03-19	Applied Materials, Inc.	Tunable gas flow equalizer
CN102763199B (zh) *	2010-02-12	2016-01-20	应用材料公司	处理腔室之气流改良
US9443753B2 (en) *	2010-07-30	2016-09-13	Applied Materials, Inc.	Apparatus for controlling the flow of a gas in a process chamber
JP4844697B1 (ja) *	2011-06-24	2011-12-28	日新電機株式会社	プラズマ処理装置
US20130240147A1 (en) *	2012-03-19	2013-09-19	Sang Ki Nam	Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
JP5951324B2 (ja) *	2012-04-05	2016-07-13	東京エレクトロン株式会社	プラズマ処理装置
WO2015023435A1 (en) *	2013-08-12	2015-02-19	Applied Materials, Inc.	Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
US20150162169A1 (en) *	2013-12-05	2015-06-11	Taiwan Semiconductor Manufacturing Co., Ltd.	Etching apparatus and method
JP6305825B2 (ja) *	2014-05-12	2018-04-04	東京エレクトロン株式会社	プラズマ処理装置およびそれに用いる排気構造
JP6544902B2 (ja) *	2014-09-18	2019-07-17	東京エレクトロン株式会社	プラズマ処理装置
JP6423706B2 (ja) *	2014-12-16	2018-11-14	東京エレクトロン株式会社	プラズマ処理装置
CN105789008B (zh) *	2014-12-22	2017-12-19	中微半导体设备(上海)有限公司	等离子体处理装置及等离子体刻蚀方法
CN106298424B (zh) *	2016-10-10	2018-04-06	武汉华星光电技术有限公司	干刻蚀电极及刻蚀机
JP2019160714A (ja) *	2018-03-16	2019-09-19	株式会社日立ハイテクノロジーズ	プラズマ処理装置
JP7186032B2 (ja) *	2018-07-27	2022-12-08	東京エレクトロン株式会社	成膜装置及び成膜方法
US11270898B2 (en) *	2018-09-16	2022-03-08	Applied Materials, Inc.	Apparatus for enhancing flow uniformity in a process chamber
JP7224192B2 (ja) *	2019-01-22	2023-02-17	東京エレクトロン株式会社	プラズマ処理装置
JP7285152B2 (ja) *	2019-07-08	2023-06-01	東京エレクトロン株式会社	プラズマ処理装置
USD943539S1 (en)	2020-03-19	2022-02-15	Applied Materials, Inc.	Confinement plate for a substrate processing chamber
USD979524S1 (en)	2020-03-19	2023-02-28	Applied Materials, Inc.	Confinement liner for a substrate processing chamber
US11380524B2 (en)	2020-03-19	2022-07-05	Applied Materials, Inc.	Low resistance confinement liner for use in plasma chamber
JP7418285B2 (ja) *	2020-05-27	2024-01-19	東京エレクトロン株式会社	基板処理装置とその製造方法、及び排気構造
US20220084845A1 (en) *	2020-09-17	2022-03-17	Applied Materials, Inc.	High conductance process kit
JP2022107392A (ja) *	2021-01-08	2022-07-21	東京エレクトロン株式会社	排気リングアセンブリ及びプラズマ処理装置
CN114005721B (zh) *	2021-10-29	2024-02-27	北京北方华创微电子装备有限公司	半导体工艺设备

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US5900103A (en) *	1994-04-20	1999-05-04	Tokyo Electron Limited	Plasma treatment method and apparatus
US5891350A (en) *	1994-12-15	1999-04-06	Applied Materials, Inc.	Adjusting DC bias voltage in plasma chambers
US5997962A (en) *	1995-06-30	1999-12-07	Tokyo Electron Limited	Plasma process utilizing an electrostatic chuck
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JP2001023955A (ja) *	1999-07-07	2001-01-26	Mitsubishi Electric Corp	プラズマ処理装置
JP4592856B2 (ja) *	1999-12-24	2010-12-08	東京エレクトロン株式会社	バッフル板及びガス処理装置
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US6451703B1 (en) *	2000-03-10	2002-09-17	Applied Materials, Inc.	Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US8617351B2 (en) *	2002-07-09	2013-12-31	Applied Materials, Inc.	Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6853141B2 (en) *	2002-05-22	2005-02-08	Daniel J. Hoffman	Capacitively coupled plasma reactor with magnetic plasma control
US6900596B2 (en) *	2002-07-09	2005-05-31	Applied Materials, Inc.	Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6528751B1 (en) *	2000-03-17	2003-03-04	Applied Materials, Inc.	Plasma reactor with overhead RF electrode tuned to the plasma
JP2002270598A (ja) *	2001-03-13	2002-09-20	Tokyo Electron Ltd	プラズマ処理装置
US20050121143A1 (en) *	2002-05-23	2005-06-09	Lam Research Corporation	Pump baffle and screen to improve etch uniformity
US7166166B2 (en) *	2002-09-30	2007-01-23	Tokyo Electron Limited	Method and apparatus for an improved baffle plate in a plasma processing system
US7972467B2 (en) *	2003-04-17	2011-07-05	Applied Materials Inc.	Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
US8236105B2 (en) *	2004-04-08	2012-08-07	Applied Materials, Inc.	Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US20060172542A1 (en) *	2005-01-28	2006-08-03	Applied Materials, Inc.	Method and apparatus to confine plasma and to enhance flow conductance
JP2006303309A (ja) *	2005-04-22	2006-11-02	Hitachi High-Technologies Corp	プラズマ処理装置

2007
- 2007-05-21 US US11/751,575 patent/US20080110567A1/en not_active Abandoned
- 2007-11-12 JP JP2007293601A patent/JP5580512B2/ja not_active Expired - Fee Related
- 2007-11-12 KR KR1020070114882A patent/KR100938635B1/ko not_active IP Right Cessation
- 2007-11-13 SG SG200717717-3A patent/SG143167A1/en unknown
- 2007-11-14 EP EP07022127A patent/EP1923901A3/en not_active Withdrawn
- 2007-11-15 TW TW096143295A patent/TWI388242B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP1923901A2 (en)	2008-05-21
TWI388242B (zh)	2013-03-01
TW200833178A (en)	2008-08-01
JP5580512B2 (ja)	2014-08-27
US20080110567A1 (en)	2008-05-15
KR20080044169A (ko)	2008-05-20
KR100938635B1 (ko)	2010-01-22
EP1923901A3 (en)	2010-06-16
JP2008135739A (ja)	2008-06-12

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