SG135050A1 - Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof - Google Patents

Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof

Info

Publication number
SG135050A1
SG135050A1 SG200506791-3A SG2005067913A SG135050A1 SG 135050 A1 SG135050 A1 SG 135050A1 SG 2005067913 A SG2005067913 A SG 2005067913A SG 135050 A1 SG135050 A1 SG 135050A1
Authority
SG
Singapore
Prior art keywords
obtainable
targets
manufacture
hard disk
magnetic material
Prior art date
Application number
SG200506791-3A
Inventor
Wenjun Zhang
Bernd Kunkel
Anand Deodutt
Michael Bartholomeucz
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of SG135050A1 publication Critical patent/SG135050A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/09—Mixtures of metallic powders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)

Abstract

A target for a deposition apparatus is formed by blending at least two different types of powders together and consolidating the powders with a powder metallurgy process to form a billet. The target is then form from the billet. The target includes a first material phase having a first PTF and a second material phase having a second PTF higher than the first PTF. The second PTF is also higher than a PTF of a material having the same chemistry as the target.
SG200506791-3A 2002-06-07 2003-05-14 Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof SG135050A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/163,620 US20030228238A1 (en) 2002-06-07 2002-06-07 High-PTF sputtering targets and method of manufacturing

Publications (1)

Publication Number Publication Date
SG135050A1 true SG135050A1 (en) 2007-09-28

Family

ID=29710011

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200506791-3A SG135050A1 (en) 2002-06-07 2003-05-14 Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof
SG200506793-9A SG131798A1 (en) 2002-06-07 2003-05-14 Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200506793-9A SG131798A1 (en) 2002-06-07 2003-05-14 Targets with high pass-through-flux magnetic material sputtering, method of manufacture and hard disk obtainable thereof

Country Status (7)

Country Link
US (1) US20030228238A1 (en)
EP (1) EP1511878A2 (en)
JP (1) JP2005530925A (en)
CN (1) CN1671881A (en)
AU (1) AU2003232135A1 (en)
SG (2) SG135050A1 (en)
WO (1) WO2003104521A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141208B2 (en) * 2003-04-30 2006-11-28 Hitachi Metals, Ltd. Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US7494617B2 (en) * 2005-04-18 2009-02-24 Heraeus Inc. Enhanced formulation of cobalt alloy matrix compositions
US20070017803A1 (en) * 2005-07-22 2007-01-25 Heraeus, Inc. Enhanced sputter target manufacturing method
JP4699194B2 (en) * 2005-12-15 2011-06-08 山陽特殊製鋼株式会社 Method for producing FeCoB-based sputtering target material
TWI369406B (en) * 2006-10-10 2012-08-01 Hitachi Metals Ltd Co-fe-zr based alloy sputtering target material and process for production thereof
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
WO2009104509A1 (en) * 2008-02-18 2009-08-27 日立金属株式会社 Fe-co alloy sputtering target material for forming soft magnetic film
CN101981224B (en) 2008-03-28 2012-08-22 Jx日矿日石金属株式会社 Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material
JP5403418B2 (en) * 2008-09-22 2014-01-29 日立金属株式会社 Method for producing Co-Fe-Ni alloy sputtering target material
SG172790A1 (en) 2009-03-27 2011-08-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
JP5370917B2 (en) * 2009-04-20 2013-12-18 日立金属株式会社 Method for producing Fe-Co-Ni alloy sputtering target material
CN102482764B (en) 2009-08-06 2014-06-18 吉坤日矿日石金属株式会社 Inorganic particle-dispersed sputtering target
US9249497B2 (en) 2010-03-19 2016-02-02 Jx Nippon Mining & Metals Corporation Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
JP5459494B2 (en) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same
US20130134038A1 (en) * 2010-09-03 2013-05-30 Jx Nippon Mining & Metals Corporation Ferromagnetic Material Sputtering Target
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
CN104018128B (en) * 2014-05-29 2016-08-24 贵研铂业股份有限公司 A kind of nickel platinum alloy sputtering target material and preparation method thereof
JP6581780B2 (en) * 2015-02-09 2019-09-25 山陽特殊製鋼株式会社 Ni-based target material with excellent sputtering properties
JP6800580B2 (en) * 2015-08-21 2020-12-16 Ｊｘ金属株式会社 Fe-Co based alloy sputtering target
CN110791736A (en) * 2018-08-01 2020-02-14 合肥江丰电子材料有限公司 Target cleaning device and working method thereof
CN112941473B (en) * 2021-01-28 2022-06-17 宁波江丰电子材料股份有限公司 MoTiNi alloy target material and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5778302A (en) * 1995-09-14 1998-07-07 Tosoh Smd, Inc. Methods of making Cr-Me sputter targets and targets produced thereby
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
WO2002016666A2 (en) * 2000-08-18 2002-02-28 Honeywell International Inc. Sputtering targets

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3494302B2 (en) * 1991-03-26 2004-02-09 日立金属株式会社 Co-Cr-Pt magnetic recording medium target
JPH0567323A (en) * 1991-09-06 1993-03-19 Denki Kagaku Kogyo Kk Vertical magnetic recording medium and manufacture thereof
JPH08311642A (en) * 1995-03-10 1996-11-26 Toshiba Corp Magnetron sputtering method and sputtering target
JP4142753B2 (en) * 1996-12-26 2008-09-03 株式会社東芝 Sputtering target, sputtering apparatus, semiconductor device and manufacturing method thereof
US6391172B2 (en) * 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
JP2000282229A (en) * 1999-03-29 2000-10-10 Hitachi Metals Ltd CoPt SPUTTERING TARGET, ITS PRODUCTION, MAGNETIC RECORDING FILM AND CoPt MAGNETIC RECORDING MEDIUM
WO2000070106A1 (en) * 1999-05-14 2000-11-23 Fuji Electric Co., Ltd. Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
US6596132B1 (en) * 1999-09-22 2003-07-22 Delphi Technologies, Inc. Production of ternary shape-memory alloy films by sputtering using a hot pressed target
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
JP4297585B2 (en) * 2000-02-28 2009-07-15 株式会社日立グローバルストレージテクノロジーズ Magnetic recording / reproducing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5778302A (en) * 1995-09-14 1998-07-07 Tosoh Smd, Inc. Methods of making Cr-Me sputter targets and targets produced thereby
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
WO2002016666A2 (en) * 2000-08-18 2002-02-28 Honeywell International Inc. Sputtering targets

Also Published As

Publication number Publication date
CN1671881A (en) 2005-09-21
AU2003232135A1 (en) 2003-12-22
SG131798A1 (en) 2007-05-28
EP1511878A2 (en) 2005-03-09
US20030228238A1 (en) 2003-12-11
AU2003232135A8 (en) 2003-12-22
WO2003104521A3 (en) 2004-06-10
WO2003104521A2 (en) 2003-12-18
JP2005530925A (en) 2005-10-13

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