CN1671881A - High-PTF sputtering targets and method of manufacturing - Google Patents

High-PTF sputtering targets and method of manufacturing Download PDF

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Publication number
CN1671881A
CN1671881A CNA038180790A CN03818079A CN1671881A CN 1671881 A CN1671881 A CN 1671881A CN A038180790 A CNA038180790 A CN A038180790A CN 03818079 A CN03818079 A CN 03818079A CN 1671881 A CN1671881 A CN 1671881A
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ptf
target
hits
chemical constitution
powder
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张文军
贝恩德·孔克尔
阿南德·德奥杜特
迈克尔·巴托洛梅乌斯
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Heraeus Inc
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Heraeus Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/09—Mixtures of metallic powders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)

Abstract

A target for a deposition apparatus is formed by blending at least two different types of powders together and consolidating the powders with a powder metallurgy process to form a billet. The target is then formed from the billet. The target includes a first material phase having a first PTF and a second material phase having a second PTF higher than the first PTF. The second PTF is also higher than a PTF of a material having the same chemistry as the target.

Description

High PTF sputter target and manufacture method
Invention field
Usually, the present invention relates to make the hard disk drive disk, relate more specifically to be used for the sputter target with high PTF of disk manufacturing.
Background of invention
Store and give for change again data on the disk of hard disk drive (HDD) in HDD.Each magnetic disk surface is by several different laminate structures that aluminium or the on-chip magnetic of glass composite and layer of non-magnetic material are formed that are coated in.The medium layer of gained provides magneticmedium for read/write/erase cycles.One or more disks are fixed on the axle of rotation, spin to produce the air cushioning layer on magnetic disk surface with sufficient speed.The air cushioning layer provides a bearing surface for the magnetic head of aerodynamic design, and magnetic head will " fly " to enter different positions being in close proximity to the magnetic disk media surface.
HDD uses the magnetic head on each dielectric surface to carry out on disk and writes, wipes and read function.Magnetic head has two basic activity assemblies, and these assemblies are writing component and read transducer.Around writing component can be described as comprising one basically by field structure around the electro-magnet of coil.When the electric current flowing through coil, magnetic field of induction by current is in field structure.Field structure comprises a gap that physically self is presented on the magnetic disk media surface.When in the sensed field structure in magnetic field, the flux gap in the field structure of jumping over produces from magnetic-head apparatus and injects to field on the dielectric surface.Write the zone and cause the specific arrangement of magnetic domain in dielectric surface, be called transition.By elaborate encoding scheme, HDD will " write " data pattern on the dielectric surface of disk.
Read transducer in magnetic head has been realized data retrieval or has been read.Read transducer is to comprise which floor ferromagnetic and magnetic resistance (MR) equipment antiferromagnet.When read transducer was positioned in above the medium through writing transition, the MR effect of transmitter produced the proportional impedance variations of " sensed " intensity of field with transition on dielectric surface.This impedance variations is interpreted as a data bit on electricity, and by elaborate encoding scheme, can be converted into data.
Hard magnetic material and soft magnetic materials are widely used in the medium of HDD and the structure of head stack.The magnetic bill of material reveals the hysteresis behavior, and the magnetization of ferromagnetic material increases with the increase that applies magnetic field, until reaching capacity.After reaching capacity, even applied field increases again, it is constant relatively that the magnetization of material keeps.But after saturated, applied field reduces to zero can not make the material magnetization reduce to zero.On the contrary, the material that is magnetized is kept the remanent field that is lower than saturation magnetisation value.Like this, ferromagnetic material can manufacture permanent magnet.Because these reasons have selected to be used for the ferromagnetic material that long term data storage is used (HDD just).
That ferromagnetic material can be described as soft magnetism or Hard Magnetic.Typically, for data-storage applications, the height of remanent magnetism is relevant with soft magnetism and hard magnetic material respectively with low value.Perhaps, ferromagnetic material is called as soft magnetism or hard magnetic material.
Typically, for data-storage applications, the low value of magnetic coercive force is relevant with soft magnetism and hard magnetic material with high value.Soft magnetic materials trends towards having several oersteds to the magnetic coercive force value between the hundreds of oersted, and hard magnetic material has the magnetic coercive force value between several thousand to several ten thousand oersteds.For example, soft magnetic materials can have the coercive force in the 5-2000 scope, and hard magnetic material can have 2000-100, the coercive force in 000 scope.
Most of medium and head stack with physical vapor deposition (PVD) or sputtering method, be in particular the manufacturing of magnetron sputter reactor sedimentation.PVD be a kind of on substrate the method for deposit film material.Substrate is closely placed material source deflection negative pressure (negative electrode), and substrate deflection malleation (anode) near the material source in the vacuum chamber (target).A large amount of neutral (uncharged) argon gas are introduced into sputtering chamber, and some incidental charged argon ions and electronics have caused collision with main argon gas cloud cluster to negative electrode and anodic accelerated motion respectively, cause the argon ion phenomenon to enlarge (snowslide).The argon ion that quickens with the target surface collision of enough energy is arranged with the sputtering target surface atom.Injected target atom passes the space between target and the substrate and is deposited on the substrate.This method causes film to produce in the mode that atom is followed atom on substrate.
Magnetron sputter reactor is the main method that is used for data storage medium industry, and in magnetron sputter reactor, the ionization of argon gas can further strengthen by place a magnetic array in the target back.Magnetic field and main electric field acting in conjunction with the intensity that must be enough to pass the target transmission, with electron focusing near in the zone on target surface.This electronics by ar atmo has caused various and more effective ionization, and has improved target atom in on-chip sedimentation velocity.
But, because there is the appreciable field shunting that applies in the magnetic property of magnetic target alloy in the target main body.This has caused following effect: the reduction that target utilizes, and this is because by being transmitted the focusing in magnetic field in the erosion groove that forms along separate routes; With in the upper limit that can operate on the magnetic target thickness, this be since need enough magnetic flux passages by the target main body to cause the sputter process.These two effects are all aggravated along with the reduction of passing flux (PTF) ability.The existence that serious target corrodes section has also promoted point source sputter phenomenon, and this can cause the homogeneity less than the optimum thickness of deposited film.
The PTF of magnetic target is defined as the ratio that is transmitted magnetic field and applies magnetic field.100% PTF value is the indication of nonmagnetic substance, and wherein the none applied field is shunted by the target main body.The PTF of magnetic target material is typically referred to as in 0 to 100% the scope of fixing on, and the material of most of commercial manufacturings shows the value between 1 to 80%.
The technology that several different mensuration product P TF are arranged.A kind of technology comprises places contacts side surfaces of bar magnet of 4.4 (± 0.4) kilogauss and target material, uses the axial hall probe monitoring with another contacts side surfaces of target material to be transmitted the field.Do not have under the situation of target (keep and when target the same separating distance during in their centres) between magnet and the probe, the maximum value in the magnetic field that is transmitted by the target main body is defined as PTF divided by applied field intensity.PTF can be expressed as a mark or percentage ratio.The technology of the another kind of PTF of measurement comprises uses horse-shoe magnet and horizontal hall probe.Unless otherwise mentioned, this technology has been used to obtain the PTF value of describing in this application.The more detailed description of measuring technology itself can find in ASTM Standard F1761.
The PTF measuring technology is founded with practically near appearing at the magnetic flux that applies in the real magnetron sputter reactor machine.Therefore, the PTF measurement is interrelated with the target material performance in the magnetron sputter reactor process.Magnetic material PTF and magnetic permeability do not repel mutually.On the contrary, between the PTF of magnetic material and maximum permeability, typically there is retrocorrelation.The material magnetic permeability value can very accurately be measured according to vibrating sample magnetometer (VSM) technology of ASTM Standard A894-89 by using.For magnetic permeability was measured, the calculating of the description of sample geometrical shape and suitable demagnetizing factor was also known in the art, as Bozarth, Ferromagnetism, p.846 described in.
Vacuum induction melting (VIM) method has been used for prior art to be formed for the hard and soft ferromagnetic material in the target.Although the prior art document has been described the technology that improves the PTF in the hard magnetic material, this hard magnetic material typically is used for data storage industry, but in the prior art document, obviously lack the high PTF treatment technology that is used for soft magnetic materials, particularly when soft magnetic materials is applied in the application of magnetron sputter reactor thin film electronic.In data storage and electronic industry, be used for the soft magnetic materials that magnetron sputter reactor uses and be described as comprising three alloy families widely: cobalt-based, Ni-based and iron-based.
CoA-(Fe，Ta，Nb，Zr，B)B
NiA-(Fe，Nb，Cu，V，Cr，Mo)B
FeA-(Al，Si，Ta，B，C，Co，Cr，Ni，Ir，Rh，V)B
For these families each, one or more alloy additions (shown in the parenthesis) can add up to the total concn that is no more than 60 atomic percents.Like this, subscript B is in 0 to 60 atomic percent scope of described one or more alloy additions, and subscript A has formed remainder, so A and B add up to the sum of 100 atomic percents.
By the use of conventional VIM technology, formed soft magnetic materials with identical microcosmic and macroscopical chemical constitution (or composition).VIM handles and is included in vacuum chamber the inside cast material.Be placed in the crucible of forming by refractory material with the starting material that obtain required alloy composition by preparation.Thin slice, powder and the alloy that starting material are typically formed various components be melt again.A coil is around around crucible, and alternating current flows through coil to produce volt voltage under controllable frequency.Material short circuit in the crucible this voltage and by electric current by resistive heating.In case become liquid, material is poured (casting) in a model metal or pottery, makes its curing and cooling.Solid-state cast material is meant ingot, if desired, can carry out further hot mechanical treatment to obtain material densification or specific microstructure character.Hot mechanical treatment has typically been formed the various combinations of hot rolling, warm-rolling, forging and annealed.
As discussed earlier, a problem of the VIM of soft magnetic materials processing is exactly the material that has produced very low PTF.This PTF value is typically in the scope between 1%-10%.For one-tenth-value thickness 1/10 at 3mm to the target material between the 7mm, the PTF value greater than 10% is inaccessible.This is for Ni-based especially true with iron based soft magnetic materials.But, for the cobalt-based soft magnetic materials (typically not containing any iron or nickelalloy additive) of selected quantity, can obtain to surpass 10% PTF value (common 20% to 50%), during use VIM technology in the specified scope of thickness in the above.Therefore, need a kind of high PTF soft magnetic materials and manufacture method thereof.
Summary of the invention
The present invention has satisfied these and other needs, provides the target that is used to deposit apparatus according to an aspect.This target comprises that first material phase with a PTF and second material with the 2nd PTF that is higher than a PTF are mutually.The 2nd PTF also is higher than the PTF that has with the material of the identical chemical constitution of target.The chemical constitution of target is different from the chemical constitution of the first and second material phases, and the chemical constitution of target is the chemical constitution that is suitable for making soft magnetic materials.Target is formed by powder metallurgic method.
Of the present invention aspect some, target has thickness greater than 3mm, greater than the diameter of 50mm be higher than 5% target PTF.When the chemical constitution of target comprised the iron of at least 40 atomic percents or nickel and do not comprise cobalt, the PTF of target can be higher than 20%.When the target chemistry composition comprised the cobalt of at least 40 atomic percents and do not comprise iron and nickel, the PTF of target can be higher than 50%.
In other aspects of the present invention, the mean particle size of target is less than 500 microns or less than 200 microns.And first is element phase or alloy phase with second mutually mutually.Perhaps, first mutually and second in mutually one be the element phase, and first phase is an alloy phase with second in mutually another.Target can have the density that is higher than 80% theoretical value or is higher than 95% theoretical value.
In another embodiment of the invention, by will at least two kinds without the powder mixes of kind together with the powder metallurgy process consolidated powder with the formation blank, thereby be formed for depositing the target of apparatus.The fixed of powder can use isostatic pressing or single shaft compacting to carry out.Target is formed by blank then.Target comprise have a PTF first material mutually with have mutually greater than second material of the 2nd PTF of a PTF.The 2nd PTF is also greater than the PTF that has with the material of the identical chemical constitution of target.The chemical constitution of target is the chemical constitution that is suitable for making soft magnetic materials.
In other aspects of the present invention, powder is made up of element powders and powdered alloy.Perhaps, a kind of powder in the powder is an element powders, and another kind of powder is a powdered alloy.The aggregate diameter of every kind of powder is less than 500 microns or less than 200 microns.
Go back in the embodiment of the present invention, the method that forms disk is provided.This method comprises the material from target is deposited to above the magnetic disk substrate.Target comprise have a PTF first material mutually with have mutually greater than second material of the 2nd PTF of a PTF.The chemical constitution of target is different from the chemical constitution of the first and second material phases, and the chemical constitution of target is the chemical constitution that is suitable for making soft magnetic materials.Form target by powder metallurgic method.
In yet another embodiment of the present invention, provide disc driver.Disc driver comprises by depositing to the disk that forms on the magnetic disk substrate from the material of target.Target comprise have a PTF first material mutually with have mutually greater than second material of the 2nd PTF of a PTF.The chemical constitution of target is different from the chemical constitution of the first and second material phases, and the chemical constitution of target is the chemical constitution that is suitable for making soft magnetic materials.Form target by powder metallurgic method.
For those skilled in the art, other advantages of the present invention will become apparent from follow-up detailed description, wherein, implement the explanation of best way of the present invention simply by expection, only show and describe exemplary of the present invention.As will recognizing, the present invention that can be used in other with different embodiments, its several details multiple obvious aspect in can revise, all these does not deviate from the present invention.Therefore, drawing and description will be considered to be actually illustrative, and nonrestrictive.
Summary of drawings
With reference to accompanying drawing, the composition that wherein has same numeral is represented identical component all the time, wherein:
Fig. 1 is for being used to form the process flow sheet of high PTF target according to one aspect of the invention;
Fig. 2 a has shown the microstructure of the NiFeNb alloy of conventional manufacturing;
Fig. 2 b has shown the microstructure of the NiFeNb alloy of the high PTF that makes according to one aspect of the present invention;
Fig. 3 a has shown the microstructure of the FeAlSi alloy of the high PTF that makes mutually according to one aspect of the present invention use element;
Fig. 3 b has shown the microstructure of the FeAlSi alloy of the high PTF that makes according to one aspect of the present invention use alloy phase.
Embodiment describes in detail
According to the present invention, provide the method for making high PTF soft magnetic materials.The present invention is also applicable to the manufacturing of high PTF hard magnetic material.The present invention is specially adapted to the manufacturing of very crisp hard magnetic material, and wherein being difficult to or can not carrying out PTF by use standard conducting forging processing increases.In addition, also provide the novel sputter target that forms with high PTF material.These sputter target can be used for the PVD manufacture method of disk.In addition, sputter target also can be used for forming the disk among the HDD.
According to aspect of the present invention, high PTF material comprises at least two different material phases (or grain type).At least one in mutually of these materials has a PTF characteristic, and at least one in mutually of other materials has the PTF characteristic that is lower than a PTF characteristic.To the high PTF material of particular type alloy can selectedly be defined as be macroscopical alloy with microcosmic unalloyed (or the part microcosmic is unalloyed) in one.As what be defined, the chemical constitution of the individual particle of high PTF material (or composition) can be different from the chemical constitution of the aggregate composition of high PTF material in essence.Individual particle can also have different in essence PTF characteristics except having the different chemical composition.In addition, the PTF characteristic of at least one in these material phases (or grain type) can be higher than the sum total PTF characteristic of the material of the routine formation that is used for the sputter target main body.
By the material phase that provides at least one to have higher PTF characteristic mutually at least two materials, high PTF material provides higher PTF flux path with by the target main body for magnetic field.This effect strengthens along with the increase of the percentage composition of higher PTF phase (one or more) in the target main body.When the distribution of one or more higher PTF phases in the target main body had caused providing continuous high PTF flux path by the target main body, this effect also was enhanced.The high PTF characteristic of material also can be explained with low PTF compound or reducing or eliminating of solid solution phase in the target main body microstructure.
Therefore, have needed soft magnetism phase chemistry on the high PTF material macroscopic view and form, but be made up of the combination of distinct element phase and/or alloy phase on the microcosmic, element phase and/or alloy phase do not have the low PTF characteristic of assembling mixture.Because wherein can use the PVD method (or magnetron sputter reactor method) of high PTF material is the deposition method that a kind of atom is followed atom,, the film that is deposited forms so regaining the balance soft magnetic materials phase chemistry that shows as target material on the macroscopic view mutually.Therefore, high PTF material allows to maximize the optimization of carrying out the magnetron sputter reactor manufacture method through target PTF, keeps the formation of necessary soft magnetism phase chemistry composition simultaneously on the membrane equipment that produces.
The invention is not restricted to following mode, at least two material phases of high PTF material described herein wherein are provided.For example, this structure also can provide by out of phase mechanical bond, (just makes the target of a phase, and mechanically embed the fragment of another phase in matrix.The another kind of method that high PTF material is provided is the powder metallurgic method of knowing.Powder metallurgic method and powder metallurgy derivative are well known in the material processing field, the invention is not restricted to concrete variation.In powder metallurgic method, the target main body forms with element and/or powdered alloy, and powder is processed under the condition of the densification that promotes products therefrom.This method does not have at element and/or powdered alloy to finish under the condition of complete phase mutual diffusion and reaction, to such an extent as at least one high PTF phase is provided, has reduced the amount of low PTF phase.
Use a kind of illustrative methods method of powder metallurgic method to be shown among Fig. 1.In step 10, select raw-material powder parameter to promote the uniform mixing of element and/or powdered alloy, optimize final product character.The example of powder parameter comprises size, distribution, form and purity.Although unrestricted in this mode, aspect some, the aggregate diameter of powder is less than 200 microns of the present invention, and in other respects, the aggregate diameter of powder is less than 500 microns.
After powder is accepted in step 20, in step 30 with these powder mixes together.Have and much can be used for effectively mixing and the technology of homogenizing element powders.In some cases, also can use machinery pre-alloyed.The example of technology of mixing and homogenizing powder comprises that ball milling, V-arrangement mix, tubulose mixes and grinds grinding.
In step 40, after combination treatment, can the powder tinning is fixed to prepare.For example, fill powder in the container, heating is found time to guarantee to remove any moisture that exists or gas-entrained, sealing then.Although the geometrical shape of container is unrestricted in any way, container can have the geometrical shape about the nearly end form of final material configuration.Encapsulating material can be through single shaft compacting or isostatic pressing by fixed.Although unrestricted in this mode, temperature can be in from envrionment temperature in about 1500 ℃ scope.
In step 50, mixed powder can carry out fixed, for example, and through hot-isostatic pressing (HIP).The HIP unit typically is even as big as holding the cylindrical pressure vessel of one or more containers.The inwall of pressurized vessel can be arranged with resistance heating element, and pressure can be controlled by introduce rare gas element in container.Mixed powder fixed also can be adopted heat/warm single shaft compacting or isostatic pressing.Under differing temps (comprising room temperature) and different pressures (temperature and pressure is all carried out the inclined-plane speed control), can utilize the rapid single shaft compacting/isostatic pressing of multistep according to alloy system of being studied and powder characteristics.
According to the complicacy in cycle, the total holding time in single shaft compacting/isostatic pressing process typically changed between about 1 hour to about 12 hours.For the data storage soft magnetic materials, under the temperature of (being preferably 600-900 ℃) between about 500 ℃ to about 1500 ℃, the pressure of about 5 to about 40ksi (being preferably 10-20ksi) typically is used for guaranteeing the density greater than about 98% theoretical value, although can provide density greater than 80% theoretical value in other aspects of the present invention.High-density has advantageously been guaranteed: do not damage the data storage medium yield in the process that the microcosmic bending of material and defective are created in the PVD manufacturing process.Aspect at least one, under the pressure between the temperature and about 10 to about 20ksi between about 400 ℃ to about 1000 ℃, the hold-time is about 2 to about 6 hours of the present invention.
By the previously described container of roll compaction jar or by also promoting fixed not using under the condition of exerting pressure sintered alloy and/or element powders.After fixed, blank can further hot mechanical treatment to obtain the further optimization of character such as PTF.For example, in temperature during less than 800 ℃, for compression ratio surpass 2%, preferably between 5% to 20%, directly rectangular billet of warm-rolling or cylindrical target cross section can promote significantly improving of target PTF.
In step 60, after fixed, solid-state material form (blank) is removed from sealed can, a slice blank can be sent to the multiple character of test blank then.When handling with VIM, the hot mechanical treatment that blank can be chosen wantonly is with the microstructure character and the macro-magnetic property of further control target.In step 70,80 and 90, also can be for example by as grinding, jet of water, grind the net shape and the size that form sputter target with the method for lathe.In step 100, can clean and do last inspection to target.
Use the blended element powders most desirably to make some soft magnetic materialss, and other soft magnetic materialss adopt the powdered alloy manufacturing.Although unrestricted in this mode, powdered alloy is typically used the gas atomization manufactured.In gas atomization, VIM handles and can be used for producing molten metal, and this molten metal pours into by nozzle, and is atomized by inert gas flow.Atomised material carries out spheroidizing, and very fast cooling is to form the powdered alloy aggregate.The another kind of method of alloying powder is the ingot of conventional casting target material, pulverizes it, and sieves it has desired size and form with production powder.
As previously discussed, in PVD method process, need good densification so that generation of defects minimizes.The ratio of mixed phase and crystalline structure also can work to medium character by influence the atom jet angle in PVD method process.To concrete application, can on individual primary, develop the material design example.For example, to the Ni-Fe non-retentive alloy in GMR read transducer (data storage magnetic-head apparatus read assembly), the content of impurity oxygen can advantageously be minimized, to alleviate the unfavorable infringement of GMR effect.On the contrary, in being used as the identical Ni-Fe alloy of a data storage medium equipment part, the oxygen level in the scope of several thousand ppm may be useful.In media applications, oxygen impurities content can the favourable influence soft magnetic film and crystal seed layer (just titanium, ruthenium, platinum etc.) between wetting property, to promote the useful dielectric behavior effect relevant with granularity refinement.
Although the characteristic that is not limited to describe below, the target that is formed by method of the present invention can have following magnetic properties and microstructure characteristic.Described data be about thickness between 3 to 7mm, the cylindrical target of diameter between 50 to 200mm.But the general applicability of these data is not subjected to the restriction of these target size scopes.When using the ASTM commercial measurement, PTF can surpass 5%, and the preferable range of PTF is between 20% and 70%.For the cobalt base alloy that does not have iron or nickelalloy additive, preferred PTF scope can further be increased between 50% and 90%.Average particle size and particle size can be typically less than 500 microns, preferably less than 200 microns.The microstructure of target has constituted the set of element phase, the set of alloy phase or a certain combination of element phase and alloy phase.Typically, will remain minimum value, to avoid the formation of the low PTF soft magnetism phase of balance in the phase mutual diffusion between the homophase not.But, under certain conditions, limited phase mutual diffusion poly-in can being designed to improve mutually (as because the ductility reason), or because the reason except the PTF maximization exerts an influence to the target macro-magnetic property.Target typically has the density greater than 80% theoretical value, is preferably more than 95% theoretical value.
By improving the PTF of target, can in target sputter process, provide a not really serious erosion section.This has increased the utilization of target material and has helped to reduce material cost subsequently.Higher PTF also makes thicker target use, and this has reduced the frequency that target is replaced in the membrane equipment manufacturing processed, and the minimizing of being changed the apparatus shut-down period that causes by frequent target can reduce the assembly manufacturing cost.And the target material PTF of increase has by reducing point source sputter phenomenon increases the additional beneficial effect of deposit film thickness evenness.
Embodiment 1
In order to compare purpose, with conventional processing and the target that uses the Ni-15.6Fe-3.2Nb alloy according to the processing manufacturing of aspect of the present invention previously discussed.
Target by ordinary method formation
The conventional target that forms is specified the ingot of alloy composition with vacuum induction melting and is formed.Ingot is rolled subsequently to handle under the temperature between 900 ℃ and 1200 ℃ and forms plate.Be rolled processing with the particle form of guaranteeing fine and closely woven kinetics recrystallize and material densification completely.The pure compression ratio surpasses 60%, wherein compression ratio=((ingot thickness-plate thickness)/ingot thickness).The cylindrical target that has thickness and be 5mm and diameter and be 180mm is formed by this milled sheet mechanical workout.
The conventional PTF that forms target with previously described ASTM measuring technology four equal intervals positions (each quadrant is measured once) and test in radial position place of the mid point of pinwheel and external diameter.The conventional microstructure that forms target is when usefulness microcrystallite kilsyth basalt shows its feature, with normalized optical metallography technical testing well known in the art.Microstructure with the conventional target that forms of Ni-15.6Fe-3.2Nb alloy is shown in Fig. 2 A.The result of PTF and granulometry is as follows:
Mean P TF=1%
Mean particle size=45 micron
Although conventional processing can form the target of the microstructure with appropriate particulate, this is sought after optimum deposit film thickness evenness, and macroscopic magnetization PTF is very low.In the sputtering chamber of magnetron sputter reactor, under accessible cathode voltage and air pressure conditions, the PVD process surpasses at 20% to 30% o'clock in the PTF of target value usually and just is initiated.Like this, the conventional target that forms will unlikely be lighted and sputter in stationary mode at 5mm thickness.Although thin target may be lighted and sputter in stationary mode, the thickness that reduces target produces harmful effect to amount of product throughput and cost in addition in HDD assembly manufacturing processed.This causes target higher in the manufacturing processed to change frequency, and the reduction of the quantity of material that can be used for sputter is described.
Target by the inventive method formation
Make the Ni-15.6Fe-3.2Nb target with the inventive method and comprise and use element Ni, Fe and Nb powder, every kind of powder has the mean diameter less than 150 microns.These powder are mixed to be loaded into capsule, to vacuumize to obtain uniform mixing, and carries out by hot-isostatic pressing under the pressure between the temperature, about 10 to about 20ksi between about 600 ℃ to about 900 ℃, and the time length is between about 2 hours to about 6 hours.After hot-isostatic pressing, fully material fixed or complete densification is machined that to have thickness with production be that 5mm and diameter are the cylindrical target of 180mm.
The PTF of target measures with radial position place of previously described ASTM measuring technology (each quadrant measure once) and the mid point between pinwheel and external diameter four equal intervals positions, this and to be used to measure the method for PTF of target of conventional formation identical.The conventional microstructure that forms target is when with existing its feature of microcrystallite kilsyth basalt, with scanning electron microscopy (SEM) technical measurement.Use the microstructure of the routine formation target of Ni-15.6Fe-3.2Nb alloy to be shown in Fig. 2 B.For the contrast ability that improves, come the multielement phase of display target with SEM.The result of PTF and granulometry is as follows:
Mean P TF=32%
Mean particle size=13 micron
The inventive method has formed the target with very thin granularity, and this is very important to obtaining good thickness of deposited film homogeneity, and the target size ratio that forms with the inventive method is a lot of with the target fine size that conventional processing forms.In addition, significantly higher than the target that routine forms with the target PTF that the inventive method forms with 1%PTF, be 32%.Like this, the target that forms with the inventive method can be lighted and sputter in stationary mode at 5mm thickness.Therefore, the purposes of the target that forms with the inventive method can be used in the manufacturing processed of HDD assembly, and therefore, cause not too significant sputter corrode groove, thickness of deposited film than high uniformity and all material utilization preferably.
Produced the target PTF value higher according to treatment technology of the present invention, in part because the blended element/alloy typically has the independent PTF value mutually higher than compounds/alloys mutually than routine techniques.Like this, applying magnetic field will find by the blended element/alloy and compare by having conventional monophasic how available " higher PTF " flux path of the low PTF of homogeneous.Independent nickel shows than the mutually high PTF value of Ni-Fe soft magnetism that makes up with iron.In addition, because niobium is not magnetic significantly (paramagnetic) under exercisable PVD temperature, niobium presents fabulous high PTF characteristic (PTF=100).Therefore, the element combinations of nickel, iron and niobium has higher PTF value with the fixed element hybrid target with nominal Ni-15.6Fe-3.2Nb composition that forms than having single Ni-15.6Fe-3.2Nb soft magnetism routine formation target mutually.
Embodiment 2
In order to compare purpose, adopt the target of Fe-30.5Co-11B, Fe-9.7Al-16.5Si and Ni-19Fe alloy (using the atomic percent meter) to make with conventional processing with according to the processing of one aspect of the invention.
Target by ordinary method formation
For Fe-30.5Co-11B and Ni-19Fe alloy, the ingot that has specified alloy composition with vacuum induction melting is made target.Then under the temperature between 900 ℃ to 1200 ℃ rolling processing ingot to form plate.Be rolled processing with the particle form of guaranteeing fine and closely woven kinetics recrystallize and material densification completely.The pure compression ratio surpasses 60%, wherein compression ratio=((ingot thickness-plate thickness)/ingot thickness).The cylindrical target that has thickness and be 5mm and diameter and be 180mm is obtained by milled sheet mechanical workout.
Because the excessive fragility of Fe-9.7Al-16.5Si material, material can not be rolled processing behind vacuum induction melting.Like this, for this material, target is obtained by as cast condition ingot mechanical workout, and for make target from this concrete material for, this is a conventional convention.Behind routine casting Fe-9.7Al-16.5Si product, speed of cooling is controlled to guarantee that the as cast condition ingot can calamity not break by strictness.
The conventional PTF that forms target with previously described ASTM measuring technology four radial position place mensuration of position (each quadrant is measured once) and the mid point between pinwheel and external diameter uniformly-spaced.
Target by the inventive method formation
Make the Fe-30.5Co-11B target with the inventive method and comprise and use elemental iron, cobalt and boron powder, every kind of powder has the mean diameter less than 150 microns.Powder is mixed to obtain uniform mixing, is loaded into capsule, vacuumizes and is carrying out hot-isostatic pressing under the pressure between the temperature, about 12 to about 25ksi between about 700 ℃ to about 1200 ℃, and the time length is between about 2 hours to about 6 hours.After hot-isostatic pressing, material fixed or complete densification is machined the cylindrical target that has 5mm thickness and 180mm diameter with production fully.
Make the Ni-19Fe target with the inventive method and comprise and use elemental nickel and iron powder, every kind of powder has the mean diameter less than 150 microns.Powder is mixed to obtain uniform mixing, is loaded into capsule, is evacuated and the temperature between about 700 ℃ to about 1200 ℃, carries out hot-isostatic pressing under the pressure between about 12 to about 25ksi, and the time length is between about 2 hours to about 6 hours.After hot-isostatic pressing, material fixed or complete densification is machined the cylindrical target that has 5mm thickness and 180mm diameter with production fully.
Make the Fe-9.7Al-16.5Si target with the inventive method and comprise and use elemental iron, nickel and Si powder, every kind of powder has the mean diameter less than 150mm.Powder is mixed to be loaded into capsule, to be evacuated to obtain uniform mixing, and carries out hot-isostatic pressing under the pressure between the temperature, about 15 to about 30ksi between about 300 ℃ to about 600 ℃, and the time length is between about 4 hours to about 8 hours.After hot-isostatic pressing, material fixed or complete densification is machined the cylindrical target that has 5mm thickness and 180mm diameter with production fully.
The PTF of target with previously described ASTM measuring technology four uniformly-spaced radial position place at position (each quadrant measure once) and the center between pinwheel and external diameter measure, this technology is identical with the method for the PTF that is used to measure conventional formation target.
Following table 1 has shown the obvious increase of the PTF of the target that forms from routine formation target to the inventive method.
Table 1
Chemical constitution (atomic percent) PTF (conventional) PTF (new)
????Fe-30.5Co-11B ????2％ ????20％
????Fe-9.7Al-16.5Si ????4％ ????49％
????Ni-19Fe ????1％ ????22％
State in embodiment 1 as the front, will reduce the thin film fabrication cost by the material use of maximization target from the inventive method target that form and that have higher PTF value.The more not serious erosion groove relevant with higher PTF value promoted the bigger utilization of useful materials, target greatly may thickness have promoted the target utilization of long period and therefore in the sputter instrument less target change frequency.In addition, the more not serious erosion groove geometry relevant with high PTF target increased the homogeneity of deposit film thickness.
The Fe-9.7Al-16.5Si alloy is the example that produces higher PTF with the target that the inventive method forms why.Aluminium and silicon under exercisable PVD temperature be nonmagnetic elements mutually.Therefore, a large portion of target microstructure has the nonmagnetic elements phase, and these nonmagnetic elements allow the higher PTF flux path of more available in magnetic field to pass the target main body mutually.On the contrary, the conventional Fe-9.7Al-16.5Si soft magnetization compound phase composite that forms the whole microstructure of target by a low PTF.
Same ultimate principle is applied to other two kinds of alloys of appearance in the table 1.For Ni-19Fe, nickel and iron all be the soft magnetism element mutually; But the independent PTF value of nickel and iron is higher than Ni-19Fe compound PTF mutually.Like this, have a high sum total PTF of PTF that the heterogenetic target has the single-phase target that forms than routine by what the inventive method formed.
Embodiment 3
The target of discussing among the embodiment in front with the inventive method formation is all made mutually with element powders.But these targets also can form with the mixture of element/alloy or alloy/alloy phase.For example, the Fe-30.5Co-11B alloy among the embodiment 2 can be made mutually with independent iron, cobalt and boron, perhaps as selecting, makes mutually by the cobalt-boron that combines with elemental iron.Cobalt-boron alloy can form with for example gas atomization, fusion or fragmentation mutually.Similarly, the Fe-9.7AL-16.5Si target that forms with the inventive method can comprise that independent iron, aluminium and element silicon are mutually or element aluminum and the combination mutually of iron-silicon.
Although be not subject to the reason that describes below, there be a lot of reasons in the process of using the inventive method, to participate in complicated element/alloy and mix mutually.Different elements has different doping properties with alloy phase; Like this, the element of combination and the alloy phase adaptability that forms the nominal composition together provide improved abilities with the specified target impurity profile of design on microstructure with the enhanced film performance.
For example, as previously mentioned, for data storage medium applications, oxygen is the useful impurity of potential in soft magnetic materials.On the contrary, in data storage GMR sensor application, oxygen demand minimizes.But,, can provide and utilize the inventive method and the target that comprises the benefit that all are relevant with this method by using the impurity profile of element/alloy phase blended custom-designed.
Complicated element/alloy phase blended Another reason is that some element phase additives of non-retentive alloy are electrical isolation (just, boron, carbon, silicon).When these insulating elements embedded in the metallic matrix of conduction mutually, they can promote the crooked and material splash of microcosmic to just manufactured membrane equipment.In the PVD of membrane equipment made, splash was that undesirable defective is led to a phenomenon.But the alloying of insulation phase can alleviate the splash phenomenon in the PVD treating processes.
For example, utilize the formation of the Fe-9.7Al-16.5Si target of the inventive method can be with the element aluminum iron-silicon phase that combines.This combination can cause the film yield to improve in PVD manufacture method process.Particular chemical is formed hereto, silicon with purified form more (replace ground, with gap or precipitation ground) be distributed in the iron-based body, therefore, can not the crooked and splash characteristic of performance microcosmic in magnetron PVD method process.
The SEM Photomicrograph of the Fe-9.7Al-16.5Si target of making mutually with iron, aluminium and element silicon according to the inventive method is shown among Fig. 3 A.Fig. 3 B adopts and the iron-aluminium of gas atomization and the iron-silicon alloy SEM Photomicrograph of the Fe-9.7Al-16.5Si target made mutually of blended ferro element mutually according to the inventive method.To two methods, powder is mixed to obtain uniform mixing, be loaded into capsule, be evacuated, carry out hot-isostatic pressing under the pressure between the temperature, about 15 to about 30ksi between about 300 ℃ to about 600 ℃, the time length is between about 4 hours to about 8 hours.After hot-isostatic pressing, material fixed or complete densification is machined the cylindrical target that has 5mm thickness and 180mm diameter with production fully.The PTF of target with previously described ASTM measuring technology four uniformly-spaced position (each quadrant measure once) and measure in intermediary radial position place of pinwheel and external diameter.The PTF of element/alloy mixture is 35%, and a shade below pure element mixture PTF, it is 49%.
Embodiment 4
For purpose relatively, the target that adopts Co-4Nb-5Zr alloy (by atomic percent) is with conventional processing with according to the processing manufacturing of one aspect of the invention.As everyone knows, adopt conventional processing or according to the highest PTF ability of cobalt-based non-retentive alloy performance processing of the present invention, that do not have iron or nickelalloy additive.
Target by ordinary method formation
Conventional formation target uses the ingot of vacuum induction melting appointment alloy composition and forms.Then under the temperature between 950 ℃ to 1200 ℃ rolling processing ingot to form plate.Be rolled processing with the particle form of guaranteeing fine and closely woven kinetics recrystallize and material densification completely.The pure compression ratio surpasses 60%, wherein compression ratio=((ingot thickness-plate thickness)/ingot thickness).In step subsequently, hot rolling making sheet is mechanically handled according to the description heat in people's such as Bartholomeusz the U.S. Patent No. 6,123,783, and the document is incorporated herein by reference.Obtaining having thickness from the plate mechanical workout of hot mechanical treatment then is that 5mm and diameter are the cylindrical target of 180mm.
The conventional PTF that forms target with previously described ASTM measuring technology four uniformly-spaced position (each quadrant is measured once) and in the measurement of the intermediate radial position place of pinwheel and external diameter.
Target by the inventive method formation
Make the Co-4Nb-5Zr target with the inventive method and comprise and use element cobalt, niobium and zirconium powder end, every kind of powder has the mean diameter less than 150mm.Powder is mixed to be loaded into capsule, to be evacuated to obtain uniform mixing, carries out hot-isostatic pressing under the pressure between the temperature, about 5 to about 15ksi between about 800 ℃ to about 1400 ℃, and the time length is between about 1 hour to about 4 hours.After hot-isostatic pressing, the material of fully fixed or complete densification according to the description in people's such as Bartholomeusz the U.S. Patent No. 6,123,783 by hot mechanical treatment.Obtaining having thickness from the plate mechanical workout of hot mechanical treatment then is that 5mm and diameter are the cylindrical target of 180mm.
Four uniformly-spaced position (each quadrant measure once) and measure at the intermediate radial position place of pinwheel and external diameter, the method for PTF of target that this technology and being used for is measured conventional formation is identical with previously described ASTM measuring technology for the PTF of target.
Conventional form target and be respectively 39% and 56% with the PTF value of the target of the inventive method manufacturing.39% PTF value explanation is even the conventional cobalt-based soft magnetic materials (not comprising iron or nickel as alloy addition) that forms can show the high PTF value of appropriateness.But, to prove as the front, the alloy PTF performance in still causing studying with the inventive method formation target enlarges markedly.This embodiment proves that further the PTF enhancement techniques that is used for cobalt and nickel-base material is effectively for improving element cobalt and nickel composition PTF mutually, and described composition is included in the target that uses the inventive method formation mutually.
Among the embodiment of Tao Luning, the PTF of target test and geometrical shape are consistent as much as possible, because the absolute PTF value of soft magnetic materials can show the dependency to the nominal strength of the relative geometrical shape between target and the magnet and the magnet that utilizes in the above.Therefore, although the absolute PTF value of the target that forms with ordinary method and the inventive method can be used as the function of the method that is used to measure PTF, have than with same alloy but with the high PTF value of processed conventionally target with the target of the inventive method manufacturing.
As embodiment, two Ni-19Fe targets are with identical method manufacturing, and first target thickness is 6mm, and diameter is 76mm, and second target also is that thickness is 6mm, but diameter is 152mm.For two targets, 4.4 kilogauss magnet with 6.5mm * 26mm cross section contact placement with the center of a face of each target.Then axial hall probe is placed on the center of opposite face.Diameter is that the PTF observed value of the target of 76mm and 152mm is respectively 30% and 15%.Like this, this test proved, have less relative quantity the soft magnetism target material target (76mm) can by apply magnetic field by saturated to produce higher clean PTF.
In another test of using the 152mm target, target is placed on the actual PVD magnetron cathode.On the distance of negative electrode, the maximum PTF on the opposite face of 152mm target is determined as 60% and 20% respectively at the target of 10mm and 15mm.Thus, this test specification apply the influence of magneticstrength to the clean PTF of soft magnetic materials.
The present invention can implement by using conventional material, method and apparatus.Therefore, the details of these materials, equipment and method is not made sets forth in detail here.In order to provide, in the description in front, a lot of details have been illustrated, as concrete material, structure, chemical substance, method etc. to thorough of the present invention.But, should be realized that the present invention is also practicable under not by the condition of the details of specifically illustrating.In other cases, for fear of unnecessary fuzzy the present invention, the Processing Structure that people know is not described in detail.
Have only an illustrative aspects of the present invention and only some versatility embodiment be illustrated in the present invention and describe.Should be understood that the present invention can be used for different other combination and environment, and change in the scope of the notion of the present invention that can here express or revise.

Claims (46)

1. target that is used to deposit apparatus comprises:
The first material phase with a PTF; With
Have the second material phase of the 2nd PTF, the 2nd PTF is higher than a PTF.
2. target according to claim 1, it hits and has the chemical constitution of the chemical constitution that is different from the first and second material phases.
3. target according to claim 2, wherein the 2nd PTF is higher than the PTF of the material with chemical constitution identical with target.
4. target according to claim 1, its chemical constitution that hits is the chemical constitution that is suitable for making soft magnetic materials.
5. target according to claim 4, its hit have thickness greater than 3mm, greater than the diameter of 50mm, and the PTF of target is higher than 5%.
6. target according to claim 5, its PTF that hits is higher than 20%.
7. target according to claim 6, its chemical constitution that hits comprises the Fe or the Ni of at least 40 atomic percents.
8. target according to claim 7, its chemical constitution that hits does not comprise Co.
9. target according to claim 5, its PTF that hits is higher than 50%.
10. target according to claim 9, its chemical constitution that hits comprise the Co of at least 40 atomic percents and do not comprise Fe and Ni.
11. target according to claim 1, its mean particle size that hits is less than 500 microns.
12. target according to claim 11, its mean particle size that hits is less than 200 microns.
13. target according to claim 1, wherein first mutually with second mutually basically by the element phase composite.
14. target according to claim 1, wherein first is made up of alloy phase mutually basically with second mutually.
15. target according to claim 1, wherein first mutually and second in mutually one be the element phase mutually, and this first phase is an alloy phase with second in mutually another mutually.
16. target according to claim 1, it hits and has the density that is higher than 80% theoretical value.
17. target according to claim 16, it hits and has the density that is higher than 95% theoretical value.
18. target according to claim 1, it hits and forms by powder metallurgic method.
19. a method that is formed for depositing the target of apparatus may further comprise the steps:
At least two kinds of dissimilar elements or powdered alloy are mixed;
With the powder metallurgic method consolidated powder to form blank; With
Form target by blank.
20. method according to claim 19, wherein these at least two kinds of powder are made up of element powders basically.
21. method according to claim 19, wherein these at least two kinds of powder are made up of powdered alloy basically.
22. method according to claim 19, wherein a kind of in these at least two kinds of powder is element powders, and the another kind in these at least two kinds of powder is a powdered alloy.
23. method according to claim 19, wherein the fixed of powder undertaken by isostatic pressing.
24. method according to claim 19, wherein the fixed of powder undertaken by the single shaft compacting.
25. method according to claim 19, wherein the aggregate diameter of every kind of powder is less than 500 microns.
26. method according to claim 25, wherein the aggregate diameter of every kind of powder is less than 200 microns.
27. method according to claim 19, it hits and comprises first material phase with a PTF and second material with PTF mutually, and this PTF is higher than a PTF.
28. method according to claim 27, it hits and has the chemical constitution of the chemical constitution that is different from the first and second material phases.
29. method according to claim 28, wherein PTF is higher than the PTF of the material with chemical constitution identical with target.
30. method according to claim 19, its chemical constitution that hits is the chemical constitution that is suitable for making soft magnetic materials.
31. method according to claim 30, its hit have thickness greater than 3mm, greater than the diameter of 50mm, and the PTF of target is higher than 5%.
32. method according to claim 31, its PTF that hits is higher than 20%.
33. method according to claim 32, its chemical constitution that hits comprises the Fe or the Ni of at least 40 atomic percents.
34. method according to claim 33, its chemical constitution that hits does not comprise Co.
35. method according to claim 31, its PTF that hits is higher than 50%.
36. method according to claim 35, its chemical constitution that hits comprises the Co of at least 40 atomic percents, and does not comprise Fe and Ni.
37. method according to claim 19, it hits and has density greater than 80% theoretical value.
38. according to the described method of claim 37, it hits and has density greater than 95% theoretical value.
39. a method that forms disk may further comprise the steps:
Magnetic disk substrate is provided; With
To deposit to from the material of target on the substrate, it hits and comprises first material phase with a PTF and second material with the 2nd PTF mutually, and the 2nd PTF is higher than a PTF.
40. according to the described method of claim 39, it hits and has the chemical constitution of the chemical constitution that is different from the first and second material phases.
41. according to the described method of claim 39, its chemical constitution that hits is the chemical constitution that is suitable for making soft magnetic materials.
42. according to the described method of claim 39, it hits and forms by powder metallurgic method.
43. a disc driver comprises:
Disk; Wherein
Disk forms by depositing on the magnetic disk substrate from the material of target, and this target comprises first material phase with a PTF and second material with the 2nd PTF mutually, and the 2nd PTF is higher than a PTF.
44. according to the described disc driver of claim 43, it hits and has the chemical constitution of the chemical constitution that is different from the first and second material phases.
45. according to the described disc driver of claim 43, its chemical constitution that hits is the chemical constitution that is suitable for making soft magnetic materials.
46. according to the described method of claim 43, it hits and forms by powder metallurgic method.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104018128A (en) * 2014-05-29 2014-09-03 贵研铂业股份有限公司 Nickel-platinum alloy sputtering target material and preparation method thereof
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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141208B2 (en) * 2003-04-30 2006-11-28 Hitachi Metals, Ltd. Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US7494617B2 (en) * 2005-04-18 2009-02-24 Heraeus Inc. Enhanced formulation of cobalt alloy matrix compositions
US20070017803A1 (en) * 2005-07-22 2007-01-25 Heraeus, Inc. Enhanced sputter target manufacturing method
JP4699194B2 (en) * 2005-12-15 2011-06-08 山陽特殊製鋼株式会社 Method for producing FeCoB-based sputtering target material
TWI369406B (en) * 2006-10-10 2012-08-01 Hitachi Metals Ltd Co-fe-zr based alloy sputtering target material and process for production thereof
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
WO2009104509A1 (en) * 2008-02-18 2009-08-27 日立金属株式会社 Fe-co alloy sputtering target material for forming soft magnetic film
WO2009119812A1 (en) * 2008-03-28 2009-10-01 日鉱金属株式会社 Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material
JP5403418B2 (en) * 2008-09-22 2014-01-29 日立金属株式会社 Method for producing Co-Fe-Ni alloy sputtering target material
SG172790A1 (en) 2009-03-27 2011-08-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
JP5370917B2 (en) * 2009-04-20 2013-12-18 日立金属株式会社 Method for producing Fe-Co-Ni alloy sputtering target material
CN102482764B (en) 2009-08-06 2014-06-18 吉坤日矿日石金属株式会社 Inorganic particle-dispersed sputtering target
EP2548994B1 (en) * 2010-03-19 2015-11-04 JX Nippon Mining & Metals Corporation NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM
JP5459494B2 (en) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same
MY160775A (en) * 2010-09-03 2017-03-15 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
JP6581780B2 (en) * 2015-02-09 2019-09-25 山陽特殊製鋼株式会社 Ni-based target material with excellent sputtering properties
JP6800580B2 (en) * 2015-08-21 2020-12-16 Ｊｘ金属株式会社 Fe-Co based alloy sputtering target

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3494302B2 (en) * 1991-03-26 2004-02-09 日立金属株式会社 Co-Cr-Pt magnetic recording medium target
JPH0567323A (en) * 1991-09-06 1993-03-19 Denki Kagaku Kogyo Kk Vertical magnetic recording medium and manufacture thereof
JPH08311642A (en) * 1995-03-10 1996-11-26 Toshiba Corp Magnetron sputtering method and sputtering target
US5778302A (en) * 1995-09-14 1998-07-07 Tosoh Smd, Inc. Methods of making Cr-Me sputter targets and targets produced thereby
JP4142753B2 (en) * 1996-12-26 2008-09-03 株式会社東芝 Sputtering target, sputtering apparatus, semiconductor device and manufacturing method thereof
US6391172B2 (en) * 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
JP2000282229A (en) * 1999-03-29 2000-10-10 Hitachi Metals Ltd CoPt SPUTTERING TARGET, ITS PRODUCTION, MAGNETIC RECORDING FILM AND CoPt MAGNETIC RECORDING MEDIUM
KR100403536B1 (en) * 1999-05-14 2003-10-30 쇼와 덴코 가부시키가이샤 Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6596132B1 (en) * 1999-09-22 2003-07-22 Delphi Technologies, Inc. Production of ternary shape-memory alloy films by sputtering using a hot pressed target
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
JP4297585B2 (en) * 2000-02-28 2009-07-15 株式会社日立グローバルストレージテクノロジーズ Magnetic recording / reproducing device
US6682636B2 (en) * 2000-08-18 2004-01-27 Honeywell International Inc. Physical vapor deposition targets and methods of formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104018128A (en) * 2014-05-29 2014-09-03 贵研铂业股份有限公司 Nickel-platinum alloy sputtering target material and preparation method thereof
CN104018128B (en) * 2014-05-29 2016-08-24 贵研铂业股份有限公司 A kind of nickel platinum alloy sputtering target material and preparation method thereof
CN110791736A (en) * 2018-08-01 2020-02-14 合肥江丰电子材料有限公司 Target cleaning device and working method thereof
CN112941473A (en) * 2021-01-28 2021-06-11 宁波江丰电子材料股份有限公司 MoTiNi alloy target material and preparation method thereof
CN112941473B (en) * 2021-01-28 2022-06-17 宁波江丰电子材料股份有限公司 MoTiNi alloy target material and preparation method thereof

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SG131798A1 (en) 2007-05-28
JP2005530925A (en) 2005-10-13
AU2003232135A8 (en) 2003-12-22
WO2003104521A2 (en) 2003-12-18
WO2003104521A3 (en) 2004-06-10
EP1511878A2 (en) 2005-03-09
US20030228238A1 (en) 2003-12-11
SG135050A1 (en) 2007-09-28

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