SG132640A1 - Binary sinusoidal sub-wavelength gratings as alignment marks - Google Patents
Binary sinusoidal sub-wavelength gratings as alignment marksInfo
- Publication number
- SG132640A1 SG132640A1 SG200608119-4A SG2006081194A SG132640A1 SG 132640 A1 SG132640 A1 SG 132640A1 SG 2006081194 A SG2006081194 A SG 2006081194A SG 132640 A1 SG132640 A1 SG 132640A1
- Authority
- SG
- Singapore
- Prior art keywords
- alignment marks
- wavelength gratings
- sinusoidal sub
- binary
- structures
- Prior art date
Links
- 238000003491 array Methods 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/284,407 US7863763B2 (en) | 2005-11-22 | 2005-11-22 | Binary sinusoidal sub-wavelength gratings as alignment marks |
Publications (1)
Publication Number | Publication Date |
---|---|
SG132640A1 true SG132640A1 (en) | 2007-06-28 |
Family
ID=37744363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200608119-4A SG132640A1 (en) | 2005-11-22 | 2006-11-22 | Binary sinusoidal sub-wavelength gratings as alignment marks |
Country Status (8)
Country | Link |
---|---|
US (1) | US7863763B2 (zh) |
EP (1) | EP1788451B1 (zh) |
JP (1) | JP4454614B2 (zh) |
KR (1) | KR100777417B1 (zh) |
CN (1) | CN1983036B (zh) |
DE (1) | DE602006005886D1 (zh) |
SG (1) | SG132640A1 (zh) |
TW (1) | TWI411895B (zh) |
Families Citing this family (46)
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JP2009509156A (ja) * | 2005-09-21 | 2009-03-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 物体の運動を検出するシステム |
US7460231B2 (en) * | 2006-03-27 | 2008-12-02 | Asml Netherlands B.V. | Alignment tool for a lithographic apparatus |
US20090134496A1 (en) * | 2006-07-06 | 2009-05-28 | Freescale Semiconductor, Inc. | Wafer and method of forming alignment markers |
US7545520B2 (en) * | 2006-11-15 | 2009-06-09 | Asml Netherlands B.V. | System and method for CD determination using an alignment sensor of a lithographic apparatus |
SG153747A1 (en) * | 2007-12-13 | 2009-07-29 | Asml Netherlands Bv | Alignment method, alignment system and product with alignment mark |
NL1036351A1 (nl) * | 2007-12-31 | 2009-07-01 | Asml Netherlands Bv | Alignment system and alignment marks for use therewith cross-reference to related applications. |
JP5006889B2 (ja) * | 2008-02-21 | 2012-08-22 | エーエスエムエル ネザーランズ ビー.ブイ. | 粗ウェーハ位置合わせ用マーク構造及びこのようなマーク構造の製造方法 |
TWI380136B (en) * | 2008-02-29 | 2012-12-21 | Nanya Technology Corp | Exposing system, mask and design method thereof |
JP4897006B2 (ja) * | 2008-03-04 | 2012-03-14 | エーエスエムエル ネザーランズ ビー.ブイ. | アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置 |
NL1036702A1 (nl) * | 2008-04-15 | 2009-10-19 | Asml Holding Nv | Diffraction elements for alignment targets. |
US8151223B2 (en) * | 2008-07-14 | 2012-04-03 | Mentor Graphics Corporation | Source mask optimization for microcircuit design |
US8039366B2 (en) * | 2009-02-19 | 2011-10-18 | International Business Machines Corporation | Method for providing rotationally symmetric alignment marks for an alignment system that requires asymmetric geometric layout |
US8313877B2 (en) * | 2009-06-12 | 2012-11-20 | Micron Technology, Inc. | Photolithography monitoring mark, photolithography mask comprising an exposure monitoring mark, and phase shift mask comprising an exposure monitoring mark |
US9395636B2 (en) | 2011-04-22 | 2016-07-19 | Mapper Lithography Ip B.V. | Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer |
NL2008679C2 (en) * | 2011-04-22 | 2013-06-26 | Mapper Lithography Ip Bv | Position determination in a lithography system using a substrate having a partially reflective position mark. |
JP5932023B2 (ja) * | 2011-05-13 | 2016-06-08 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | ターゲットの少なくとも一部を処理するためのリソグラフィシステム |
US10288489B2 (en) * | 2012-05-30 | 2019-05-14 | Nikon Corporation | Method and device for measuring wavefront using light-exit section causing light amount distribution in at least one direction |
US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
EP2912521A1 (en) * | 2012-10-26 | 2015-09-02 | Mapper Lithography IP B.V. | Determining a position of a substrate in lithography |
US9726991B2 (en) | 2013-03-14 | 2017-08-08 | Asml Netherlands B.V. | Patterning device, method of producing a marker on a substrate and device manufacturing method |
CN105359039B (zh) | 2013-07-03 | 2018-08-10 | Asml荷兰有限公司 | 检验设备和方法、光刻设备、光刻处理单元以及器件制造方法 |
JP6465540B2 (ja) * | 2013-07-09 | 2019-02-06 | キヤノン株式会社 | 形成方法及び製造方法 |
US10168450B2 (en) * | 2013-12-27 | 2019-01-01 | Sunasic Technologies, Inc. | Silicon wafer having colored top side |
JP6341883B2 (ja) | 2014-06-27 | 2018-06-13 | キヤノン株式会社 | 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法 |
WO2016197145A1 (en) * | 2015-06-04 | 2016-12-08 | Chou Stephen Y | Subwavelength structured lens, use and methods of making the same |
CN105467747A (zh) * | 2016-01-09 | 2016-04-06 | 北京工业大学 | 对准标记及掩膜版 |
CN106206545B (zh) * | 2016-07-14 | 2018-11-23 | 深圳市华星光电技术有限公司 | 标记、显示装置及利用标记曝光和蚀刻制程稳定性的方法 |
EP3367165A1 (en) * | 2017-02-23 | 2018-08-29 | ASML Netherlands B.V. | Methods of aligning a diffractive optical system and diffractive optical element |
CN106840617B (zh) * | 2017-03-02 | 2019-01-01 | 西安工业大学 | 变频栅条靶标及其光电成像***动态传递函数测量方法 |
US10795268B2 (en) * | 2017-09-29 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for measuring overlay errors using overlay measurement patterns |
KR102390742B1 (ko) * | 2017-10-24 | 2022-04-26 | 에이에스엠엘 네델란즈 비.브이. | 마크, 오버레이 타겟, 및 정렬 및 오버레이 방법 |
EP3477389A1 (en) * | 2017-10-24 | 2019-05-01 | ASML Netherlands B.V. | Mark, overlay target, and methods of alignment and overlay |
US11022889B2 (en) * | 2017-11-13 | 2021-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Overlay-shift measurement system and method for manufacturing semiconductor structure and measuring alignment mark of semiconductor structure |
US11085754B2 (en) | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
JP6969361B2 (ja) * | 2017-12-21 | 2021-11-24 | 日本電信電話株式会社 | 光学素子 |
US20220121129A1 (en) * | 2019-02-19 | 2022-04-21 | Asml Netherlands B.V. | Metrology system, lithographic apparatus, and method |
WO2020169357A1 (en) * | 2019-02-21 | 2020-08-27 | Asml Holding N.V. | Wafer alignment using form birefringence of targets or product |
EP3706076B1 (en) * | 2019-03-07 | 2021-02-24 | Siemens Healthcare GmbH | Method and device to determine the dimensions and distance of a number of objects in an environment |
CN109860153B (zh) * | 2019-03-29 | 2020-08-04 | 长江存储科技有限责任公司 | 集成电路器件、形成对准测量图形的方法以及光掩模 |
EP3767394A1 (en) * | 2019-07-18 | 2021-01-20 | ASML Netherlands B.V. | Mark, overlay target, and methods of alignment and overlay |
WO2021008794A1 (en) * | 2019-07-15 | 2021-01-21 | Asml Netherlands B.V. | Methods of alignment, overlay, configuration of marks, manufacturing of patterning devices and patterning the marks |
WO2021073854A1 (en) * | 2019-10-14 | 2021-04-22 | Asml Holding N.V. | Metrology mark structure and method of determining metrology mark structure |
CN111443570B (zh) * | 2020-04-14 | 2023-09-29 | 长江存储科技有限责任公司 | 光掩模、半导体器件与光掩模的设计方法 |
CN111856636B (zh) * | 2020-07-03 | 2021-10-22 | 中国科学技术大学 | 一种变间距光栅掩模线密度分布可控微调方法 |
CN114494669B (zh) * | 2022-04-13 | 2022-06-21 | 歌尔股份有限公司 | 透明平面物体叠合方法、控制器、叠合装置及存储介质 |
CN115185100B (zh) * | 2022-06-22 | 2023-08-04 | 成都飞机工业(集团)有限责任公司 | 一种加密点阵式光场的生成方法 |
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US4631416A (en) | 1983-12-19 | 1986-12-23 | Hewlett-Packard Company | Wafer/mask alignment system using diffraction gratings |
GB8528826D0 (en) | 1985-11-22 | 1985-12-24 | Gen Electric Co Plc | Alignment techniques |
US5601957A (en) | 1994-06-16 | 1997-02-11 | Nikon Corporation | Micro devices manufacturing method comprising the use of a second pattern overlying an alignment mark to reduce flattening |
JP2000133576A (ja) | 1998-10-28 | 2000-05-12 | Nec Corp | 位置ずれ計測マーク及び位置ずれ計測方法 |
WO2000072093A1 (en) | 1999-05-25 | 2000-11-30 | Massachusetts Institute Of Technology | Optical gap measuring apparatus and method using two-dimensional grating mark with chirp in one direction |
US6628406B1 (en) * | 2000-04-20 | 2003-09-30 | Justin L. Kreuzer | Self referencing mark independent alignment sensor |
US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
JP5180419B2 (ja) | 2000-08-30 | 2013-04-10 | ケーエルエー−テンカー・コーポレーション | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
EP1260870A1 (en) | 2001-05-23 | 2002-11-27 | ASML Netherlands B.V. | Alignment mark |
EP1260869A1 (en) | 2001-05-23 | 2002-11-27 | ASML Netherlands B.V. | Substrate provided with an alignment mark in a substantially transparent process layer |
KR100583693B1 (ko) | 2001-05-23 | 2006-05-25 | 에이에스엠엘 네델란즈 비.브이. | 실질적으로 투과성인 공정층내에 정렬마크가 제공된 기판,상기 마크를 노광하는 마스크, 디바이스 제조방법 및 그디바이스 |
US6970649B2 (en) * | 2001-10-30 | 2005-11-29 | International Business Machines Corporation | WDMA free space broadcast technique for optical backplanes and interplanar communications |
US6859303B2 (en) * | 2002-06-18 | 2005-02-22 | Nanoopto Corporation | Optical components exhibiting enhanced functionality and method of making same |
CN100337089C (zh) * | 2002-09-20 | 2007-09-12 | Asml荷兰有限公司 | 器件检验 |
JP2004134474A (ja) | 2002-10-09 | 2004-04-30 | Nikon Corp | 位置検出装置の検査方法、位置検出装置、露光装置、および露光方法 |
US20040075179A1 (en) * | 2002-10-22 | 2004-04-22 | United Microelectronics Corp | Structural design of alignment mark |
EP1426824A1 (en) * | 2002-12-04 | 2004-06-09 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
SG108975A1 (en) | 2003-07-11 | 2005-02-28 | Asml Netherlands Bv | Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern |
-
2005
- 2005-11-22 US US11/284,407 patent/US7863763B2/en not_active Expired - Fee Related
-
2006
- 2006-11-13 TW TW095141850A patent/TWI411895B/zh not_active IP Right Cessation
- 2006-11-15 JP JP2006308751A patent/JP4454614B2/ja not_active Expired - Fee Related
- 2006-11-17 DE DE602006005886T patent/DE602006005886D1/de active Active
- 2006-11-17 EP EP06255897A patent/EP1788451B1/en not_active Expired - Fee Related
- 2006-11-21 CN CN2006101493143A patent/CN1983036B/zh not_active Expired - Fee Related
- 2006-11-22 SG SG200608119-4A patent/SG132640A1/en unknown
- 2006-11-22 KR KR1020060115636A patent/KR100777417B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1983036A (zh) | 2007-06-20 |
US20070114678A1 (en) | 2007-05-24 |
DE602006005886D1 (de) | 2009-05-07 |
US7863763B2 (en) | 2011-01-04 |
KR100777417B1 (ko) | 2007-11-20 |
TW200732866A (en) | 2007-09-01 |
CN1983036B (zh) | 2012-04-11 |
KR20070054123A (ko) | 2007-05-28 |
EP1788451A1 (en) | 2007-05-23 |
JP2007142419A (ja) | 2007-06-07 |
TWI411895B (zh) | 2013-10-11 |
EP1788451B1 (en) | 2009-03-25 |
JP4454614B2 (ja) | 2010-04-21 |
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