SG112879A1 - Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same - Google Patents
Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the sameInfo
- Publication number
- SG112879A1 SG112879A1 SG200302475A SG200302475A SG112879A1 SG 112879 A1 SG112879 A1 SG 112879A1 SG 200302475 A SG200302475 A SG 200302475A SG 200302475 A SG200302475 A SG 200302475A SG 112879 A1 SG112879 A1 SG 112879A1
- Authority
- SG
- Singapore
- Prior art keywords
- type semiconductor
- nitride type
- making
- methods
- single crystal
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002137722A JP2003327497A (ja) | 2002-05-13 | 2002-05-13 | GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG112879A1 true SG112879A1 (en) | 2005-07-28 |
Family
ID=29267760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200302475A SG112879A1 (en) | 2002-05-13 | 2003-04-30 | Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
Country Status (7)
Country | Link |
---|---|
US (3) | US6841274B2 (zh) |
EP (2) | EP2437286A1 (zh) |
JP (1) | JP2003327497A (zh) |
KR (2) | KR20030088336A (zh) |
CN (1) | CN100337308C (zh) |
SG (1) | SG112879A1 (zh) |
TW (1) | TWI271788B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108369893A (zh) * | 2015-11-24 | 2018-08-03 | 住友电气工业株式会社 | 碳化硅单晶衬底、碳化硅外延衬底及制造碳化硅半导体器件的方法 |
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JP3801125B2 (ja) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
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US9279193B2 (en) * | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
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2002
- 2002-05-13 JP JP2002137722A patent/JP2003327497A/ja active Pending
-
2003
- 2003-04-30 SG SG200302475A patent/SG112879A1/en unknown
- 2003-05-08 US US10/431,431 patent/US6841274B2/en not_active Expired - Lifetime
- 2003-05-10 KR KR10-2003-0029615A patent/KR20030088336A/ko active Search and Examination
- 2003-05-13 CN CNB031251633A patent/CN100337308C/zh not_active Expired - Fee Related
- 2003-05-13 TW TW092113001A patent/TWI271788B/zh not_active IP Right Cessation
- 2003-05-13 EP EP11195922A patent/EP2437286A1/en not_active Withdrawn
- 2003-05-13 EP EP03009850A patent/EP1363322A3/en not_active Ceased
-
2004
- 2004-11-29 US US10/997,887 patent/US20050095861A1/en not_active Abandoned
-
2010
- 2010-03-16 US US12/725,233 patent/US20100173483A1/en not_active Abandoned
- 2010-07-19 KR KR1020100069704A patent/KR20100089049A/ko active Search and Examination
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1041610A1 (en) * | 1997-10-30 | 2000-10-04 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
US6528394B1 (en) * | 1999-02-05 | 2003-03-04 | Samsung Electronics Co., Ltd. | Growth method of gallium nitride film |
EP1164210A2 (en) * | 2000-06-17 | 2001-12-19 | Sharp Kabushiki Kaisha | A method of growing a semiconductor layer |
WO2002101121A1 (en) * | 2001-06-08 | 2002-12-19 | Advanced Technology Materials, Inc. | High surface quality gan wafer and method of fabricating same |
US6648966B2 (en) * | 2001-08-01 | 2003-11-18 | Crystal Photonics, Incorporated | Wafer produced thereby, and associated methods and devices using the wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108369893A (zh) * | 2015-11-24 | 2018-08-03 | 住友电气工业株式会社 | 碳化硅单晶衬底、碳化硅外延衬底及制造碳化硅半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI271788B (en) | 2007-01-21 |
EP2437286A1 (en) | 2012-04-04 |
CN100337308C (zh) | 2007-09-12 |
KR20100089049A (ko) | 2010-08-11 |
US20100173483A1 (en) | 2010-07-08 |
US20050095861A1 (en) | 2005-05-05 |
EP1363322A2 (en) | 2003-11-19 |
CN1462060A (zh) | 2003-12-17 |
US20030209185A1 (en) | 2003-11-13 |
TW200405429A (en) | 2004-04-01 |
US6841274B2 (en) | 2005-01-11 |
KR20030088336A (ko) | 2003-11-19 |
EP1363322A3 (en) | 2009-10-21 |
JP2003327497A (ja) | 2003-11-19 |
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