FR2921200B1 - Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication - Google Patents
Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabricationInfo
- Publication number
- FR2921200B1 FR2921200B1 FR0757652A FR0757652A FR2921200B1 FR 2921200 B1 FR2921200 B1 FR 2921200B1 FR 0757652 A FR0757652 A FR 0757652A FR 0757652 A FR0757652 A FR 0757652A FR 2921200 B1 FR2921200 B1 FR 2921200B1
- Authority
- FR
- France
- Prior art keywords
- epitaxic
- manufacture
- monolithic semiconductor
- semiconductor heterostructures
- heterostructures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0757652A FR2921200B1 (fr) | 2007-09-18 | 2007-09-18 | Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication |
PCT/FR2008/051669 WO2009047448A1 (fr) | 2007-09-18 | 2008-09-17 | Hétérostructures semi-conductrices monolithiques épitaxiées et leur procédé de fabrication |
EP08837575A EP2188830A1 (fr) | 2007-09-18 | 2008-09-17 | Hétérostructures semi-conductrices monolithiques épitaxiées et leur procédé de fabrication |
JP2010525404A JP2010539723A (ja) | 2007-09-18 | 2008-09-17 | エピタキシャル固体半導体ヘテロ構造及びその製造方法 |
US12/678,548 US8389995B2 (en) | 2007-09-18 | 2008-09-17 | Epitaxial solid-state semiconducting heterostructures and method for making same |
JP2014138772A JP6062887B2 (ja) | 2007-09-18 | 2014-07-04 | エピタキシャル固体半導体ヘテロ構造及びその製造方法 |
JP2016205042A JP2017028318A (ja) | 2007-09-18 | 2016-10-19 | エピタキシャル固体半導体ヘテロ構造及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0757652A FR2921200B1 (fr) | 2007-09-18 | 2007-09-18 | Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2921200A1 FR2921200A1 (fr) | 2009-03-20 |
FR2921200B1 true FR2921200B1 (fr) | 2009-12-18 |
Family
ID=39434296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0757652A Expired - Fee Related FR2921200B1 (fr) | 2007-09-18 | 2007-09-18 | Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US8389995B2 (fr) |
EP (1) | EP2188830A1 (fr) |
JP (3) | JP2010539723A (fr) |
FR (1) | FR2921200B1 (fr) |
WO (1) | WO2009047448A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5585137B2 (ja) * | 2010-03-17 | 2014-09-10 | 行男 渡部 | 金属酸化物を含むへテロ構造の作製法及び該金属酸化物の製造法 |
US8846506B2 (en) * | 2012-04-26 | 2014-09-30 | The University Of North Carolina At Charlotte | Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100) |
GB2517697A (en) | 2013-08-27 | 2015-03-04 | Ibm | Compound semiconductor structure |
FR3069705A1 (fr) | 2017-07-28 | 2019-02-01 | Centre National De La Recherche Scientifique | Cellule photovoltaique tandem |
CN113284839A (zh) * | 2021-05-21 | 2021-08-20 | 中国科学院上海微***与信息技术研究所 | 一种钻石晶体的异质键合方法及异质结构 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2649928B2 (ja) * | 1988-01-11 | 1997-09-03 | 富士通株式会社 | 半導体ウエハの製造方法 |
US5323023A (en) * | 1992-12-02 | 1994-06-21 | Xerox Corporation | Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors |
US6608327B1 (en) * | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
US6427066B1 (en) * | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6410941B1 (en) * | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
WO2002045140A2 (fr) * | 2000-11-22 | 2002-06-06 | Motorola, Inc. | Structures semi-conductrices a substrat flexible |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US20020153524A1 (en) * | 2001-04-19 | 2002-10-24 | Motorola Inc. | Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks |
US20020158265A1 (en) * | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
US20020163024A1 (en) * | 2001-05-04 | 2002-11-07 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices ultilizing lateral epitaxial overgrowth of a monocrystallaline material layer on a compliant substrate |
US7160388B2 (en) * | 2001-06-06 | 2007-01-09 | Nichia Corporation | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
US20030015134A1 (en) * | 2001-07-18 | 2003-01-23 | Motorola, Inc. | Semiconductor structure for edge mounting applications and process for fabrication |
US6472276B1 (en) * | 2001-07-20 | 2002-10-29 | Motorola, Inc. | Using silicate layers for composite semiconductor |
US6472694B1 (en) * | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
CN1555570A (zh) * | 2001-07-31 | 2004-12-15 | ����ŵ˹�ݴ�ѧ����ίԱ�� | 量子点与量子阱耦合的半导体器件及其制造方法 |
US20030024471A1 (en) * | 2001-08-06 | 2003-02-06 | Motorola, Inc. | Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition |
US6462360B1 (en) * | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
JP4041877B2 (ja) * | 2001-12-27 | 2008-02-06 | 国立大学法人 筑波大学 | 半導体装置 |
US6872252B2 (en) * | 2002-03-06 | 2005-03-29 | Agilent Technologies, Inc. | Lead-based perovskite buffer for forming indium phosphide on silicon |
JP2003282439A (ja) * | 2002-03-27 | 2003-10-03 | Seiko Epson Corp | デバイス用基板およびデバイス用基板の製造方法 |
US6916717B2 (en) * | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
JP2003332242A (ja) * | 2002-05-10 | 2003-11-21 | Makoto Ishida | 半導体基板およびその製造方法 |
JP2003327497A (ja) * | 2002-05-13 | 2003-11-19 | Sumitomo Electric Ind Ltd | GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
WO2004051725A1 (fr) * | 2002-12-03 | 2004-06-17 | Nikko Materials Co., Ltd. | Procede de croissance epitaxiale et substrat destine a la croissance epitaxiale |
JP2004317886A (ja) * | 2003-04-17 | 2004-11-11 | Matsushita Electric Ind Co Ltd | 光スイッチとそれを用いた光磁気回路、ならびに光磁気回路の製造方法 |
US7968273B2 (en) * | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
JP4707475B2 (ja) * | 2005-06-17 | 2011-06-22 | 国立大学法人 東京大学 | 化合物半導体結晶の成長方法、その成長方法を用いて成長した化合物半導体結晶の層を備えた半導体装置及び半導体基板 |
KR100753152B1 (ko) * | 2005-08-12 | 2007-08-30 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
JP4809684B2 (ja) * | 2006-01-31 | 2011-11-09 | 富士通株式会社 | 半導体装置 |
-
2007
- 2007-09-18 FR FR0757652A patent/FR2921200B1/fr not_active Expired - Fee Related
-
2008
- 2008-09-17 EP EP08837575A patent/EP2188830A1/fr not_active Withdrawn
- 2008-09-17 WO PCT/FR2008/051669 patent/WO2009047448A1/fr active Application Filing
- 2008-09-17 JP JP2010525404A patent/JP2010539723A/ja active Pending
- 2008-09-17 US US12/678,548 patent/US8389995B2/en not_active Expired - Fee Related
-
2014
- 2014-07-04 JP JP2014138772A patent/JP6062887B2/ja not_active Expired - Fee Related
-
2016
- 2016-10-19 JP JP2016205042A patent/JP2017028318A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20100289063A1 (en) | 2010-11-18 |
US8389995B2 (en) | 2013-03-05 |
FR2921200A1 (fr) | 2009-03-20 |
JP2015008293A (ja) | 2015-01-15 |
JP2010539723A (ja) | 2010-12-16 |
JP2017028318A (ja) | 2017-02-02 |
EP2188830A1 (fr) | 2010-05-26 |
JP6062887B2 (ja) | 2017-01-18 |
WO2009047448A1 (fr) | 2009-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
ST | Notification of lapse |
Effective date: 20210506 |