SG11202103231VA - Methods for making silicon and nitrogen containing films - Google Patents
Methods for making silicon and nitrogen containing filmsInfo
- Publication number
- SG11202103231VA SG11202103231VA SG11202103231VA SG11202103231VA SG11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- nitrogen containing
- containing films
- making silicon
- silicon
- Prior art date
Links
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
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US201862740478P | 2018-10-03 | 2018-10-03 | |
PCT/US2019/054268 WO2020072625A1 (en) | 2018-10-03 | 2019-10-02 | Methods for making silicon and nitrogen containing films |
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SG11202103231VA true SG11202103231VA (en) | 2021-04-29 |
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CN (1) | CN112969818A (en) |
SG (1) | SG11202103231VA (en) |
TW (2) | TWI767661B (en) |
WO (1) | WO2020072625A1 (en) |
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KR20210047966A (en) * | 2018-09-24 | 2021-04-30 | 버슘머트리얼즈 유에스, 엘엘씨 | Method for producing silicon and nitrogen-containing membranes |
CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
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2019
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- 2019-10-02 EP EP19869361.6A patent/EP3844318A4/en active Pending
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WO2020072625A1 (en) | 2020-04-09 |
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TW202028216A (en) | 2020-08-01 |
TWI728487B (en) | 2021-05-21 |
JP2022504261A (en) | 2022-01-13 |
CN112969818A (en) | 2021-06-15 |
EP3844318A4 (en) | 2022-06-01 |
TWI767661B (en) | 2022-06-11 |
KR20210055098A (en) | 2021-05-14 |
TW202134253A (en) | 2021-09-16 |
EP3844318A1 (en) | 2021-07-07 |
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