SG11202103231VA - Methods for making silicon and nitrogen containing films - Google Patents

Methods for making silicon and nitrogen containing films

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Publication number
SG11202103231VA
SG11202103231VA SG11202103231VA SG11202103231VA SG11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA SG 11202103231V A SG11202103231V A SG 11202103231VA
Authority
SG
Singapore
Prior art keywords
methods
nitrogen containing
containing films
making silicon
silicon
Prior art date
Application number
SG11202103231VA
Inventor
Xinjian Lei
Moo-Sung Kim
Se-Won Lee
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11202103231VA publication Critical patent/SG11202103231VA/en

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

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  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
KR20210047966A (en) * 2018-09-24 2021-04-30 버슘머트리얼즈 유에스, 엘엘씨 Method for producing silicon and nitrogen-containing membranes
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Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2614338B2 (en) 1990-01-11 1997-05-28 株式会社東芝 Liquid source container
DE69738136T2 (en) 1996-12-17 2008-06-12 Advanced Technology Materials, Inc., Danbury REAGENT TANK FOR CVD
JP2000100812A (en) 1998-09-17 2000-04-07 Tokyo Electron Ltd Method for forming silicon nitride film
JP4209563B2 (en) 1999-09-17 2009-01-14 東京エレクトロン株式会社 Method for forming silicon nitride film
US6953047B2 (en) 2002-01-14 2005-10-11 Air Products And Chemicals, Inc. Cabinet for chemical delivery with solvent purging
US8951342B2 (en) * 2002-04-17 2015-02-10 Air Products And Chemicals, Inc. Methods for using porogens for low k porous organosilica glass films
US9061317B2 (en) * 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP4451457B2 (en) * 2007-02-26 2010-04-14 富士通株式会社 Insulating film material and manufacturing method thereof, multilayer wiring and manufacturing method thereof, and manufacturing method of semiconductor device
EP2209839A1 (en) * 2007-11-06 2010-07-28 Braggone OY Carbosilane polymer compositions for anti-reflective coatings
US20090155606A1 (en) 2007-12-13 2009-06-18 Asm Genitech Korea Ltd. Methods of depositing a silicon nitride film
EP2264219A4 (en) * 2008-03-26 2012-09-05 Jsr Corp Material for chemical vapor deposition, silicon-containing insulating film and process for production thereof
KR20110084517A (en) * 2008-10-20 2011-07-25 다우 코닝 코포레이션 Cvd precursors
US8765233B2 (en) * 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
US20130078376A1 (en) * 2010-04-01 2013-03-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US8912353B2 (en) * 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
JP5781350B2 (en) * 2011-03-30 2015-09-24 リンテック株式会社 GAS BARRIER LAMINATE, ITS MANUFACTURING METHOD, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE
US20130217243A1 (en) * 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130217240A1 (en) * 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
CN107342216B (en) * 2011-09-23 2022-05-31 诺发***公司 Plasma activated conformal dielectric film deposition
US20130224964A1 (en) * 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9978585B2 (en) * 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
TWI449802B (en) * 2012-06-06 2014-08-21 Univ Nat Chiao Tung Carbon-doped silicon nitride thin film and manufacturing method and device thereof
TW201441408A (en) 2013-03-15 2014-11-01 Applied Materials Inc PEALD of films comprising silicon nitride
TWI634073B (en) * 2013-09-05 2018-09-01 道康寧公司 2,2,4,4-tetrasilylpentasilane and its compositions, methods uses
US11549181B2 (en) * 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
US10023958B2 (en) * 2013-11-22 2018-07-17 Applied Materials, Inc. Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
KR102411034B1 (en) * 2014-07-10 2022-06-17 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Alkylamino-substituted carbosilane precursors
US9879340B2 (en) * 2014-11-03 2018-01-30 Versum Materials Us, Llc Silicon-based films and methods of forming the same
JP6585724B2 (en) * 2015-02-06 2019-10-02 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Composition for carbon-doped silicon-containing film and method of using the same
TWI693295B (en) * 2015-02-06 2020-05-11 美商諾發系統有限公司 Conformal deposition of silicon carbide films
TWI701357B (en) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 Pulsed plasma for film deposition
JP6803368B2 (en) * 2015-07-09 2020-12-23 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Alkylamino-substituted halocarbosilane precursor
US11035039B2 (en) * 2015-07-31 2021-06-15 Versum Materials Us, Llc Compositions and methods for depositing silicon nitride films
US9455138B1 (en) * 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
KR102014175B1 (en) * 2016-07-22 2019-08-27 (주)디엔에프 The manufacturing method of the silicon nitride film by using plasma enhanced atomic layer deposition
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
WO2018057677A1 (en) 2016-09-26 2018-03-29 Dow Corning Corporation Trichlorodisilane
JP6794533B2 (en) 2016-09-28 2020-12-02 ダウ シリコーンズ コーポレーション Chlorodishirazan
JP6949947B2 (en) * 2016-10-12 2021-10-13 ダウ シリコーンズ コーポレーション Thio (di) silane
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
US10049882B1 (en) 2017-01-25 2018-08-14 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

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