SG11202103168TA - Extreme ultraviolet mask with backside coating - Google Patents
Extreme ultraviolet mask with backside coatingInfo
- Publication number
- SG11202103168TA SG11202103168TA SG11202103168TA SG11202103168TA SG11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA
- Authority
- SG
- Singapore
- Prior art keywords
- extreme ultraviolet
- backside coating
- ultraviolet mask
- mask
- backside
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862751239P | 2018-10-26 | 2018-10-26 | |
US16/662,742 US11249386B2 (en) | 2018-10-26 | 2019-10-24 | Extreme ultraviolet mask with backside coating |
PCT/US2019/058012 WO2020086932A1 (en) | 2018-10-26 | 2019-10-25 | Extreme ultraviolet mask with backside coating |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202103168TA true SG11202103168TA (en) | 2021-05-28 |
Family
ID=70328323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202103168TA SG11202103168TA (en) | 2018-10-26 | 2019-10-25 | Extreme ultraviolet mask with backside coating |
Country Status (6)
Country | Link |
---|---|
US (1) | US11249386B2 (ja) |
JP (1) | JP7288959B2 (ja) |
KR (1) | KR20210066016A (ja) |
SG (1) | SG11202103168TA (ja) |
TW (1) | TWI835896B (ja) |
WO (1) | WO2020086932A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220121101A1 (en) * | 2020-10-16 | 2022-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Absorber materials for extreme ultraviolet mask |
WO2023171583A1 (ja) * | 2022-03-08 | 2023-09-14 | Agc株式会社 | 反射型マスクブランク並びに反射型マスク及びその製造方法 |
WO2024091683A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Optical coating for eliminating ghost images in optical metrology tools |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6737201B2 (en) | 2000-11-22 | 2004-05-18 | Hoya Corporation | Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device |
JP2002299228A (ja) * | 2001-04-03 | 2002-10-11 | Nikon Corp | レチクル、それを用いた露光装置及び露光方法 |
KR100630728B1 (ko) * | 2004-12-29 | 2006-10-02 | 삼성전자주식회사 | 반사 포토마스크 및 그 제조 방법 |
KR100604938B1 (ko) * | 2005-05-27 | 2006-07-28 | 삼성전자주식회사 | 극자외선 노광용 반사마스크 및 그 제조방법 |
WO2007013313A1 (ja) * | 2005-07-26 | 2007-02-01 | Sharp Kabushiki Kaisha | 透過型液晶表示装置 |
JP2007335625A (ja) * | 2006-06-15 | 2007-12-27 | Matsushita Electric Ind Co Ltd | 太陽電池 |
KR101585696B1 (ko) | 2006-12-15 | 2016-01-14 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, 및 그 마스크 블랭크용의 기능막이 형성된 기판 |
JP6125772B2 (ja) * | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
JP2015018918A (ja) * | 2013-07-10 | 2015-01-29 | キヤノン株式会社 | 反射型原版、露光方法及びデバイス製造方法 |
KR101567057B1 (ko) * | 2013-11-15 | 2015-11-09 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
JP6361283B2 (ja) * | 2014-05-23 | 2018-07-25 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
JP2016009744A (ja) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | 反射型マスクおよび反射型マスクブランク |
US9612522B2 (en) * | 2014-07-11 | 2017-04-04 | Applied Materials, Inc. | Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor |
KR20160016098A (ko) * | 2014-08-04 | 2016-02-15 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
US9766536B2 (en) * | 2015-07-17 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask with multilayer structure and manufacturing method by using the same |
JP6743505B2 (ja) * | 2016-06-17 | 2020-08-19 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
TWI774375B (zh) * | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
TWI821984B (zh) * | 2016-07-27 | 2023-11-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法 |
TWI712849B (zh) * | 2017-02-17 | 2020-12-11 | 聯華電子股份有限公司 | 一種極紫外線光罩 |
JP6861095B2 (ja) | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
KR102402767B1 (ko) * | 2017-12-21 | 2022-05-26 | 삼성전자주식회사 | 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법 |
TW202008073A (zh) * | 2018-07-19 | 2020-02-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
-
2019
- 2019-10-21 TW TW108137859A patent/TWI835896B/zh active
- 2019-10-24 US US16/662,742 patent/US11249386B2/en active Active
- 2019-10-25 JP JP2021522333A patent/JP7288959B2/ja active Active
- 2019-10-25 SG SG11202103168TA patent/SG11202103168TA/en unknown
- 2019-10-25 WO PCT/US2019/058012 patent/WO2020086932A1/en active Application Filing
- 2019-10-25 KR KR1020217015652A patent/KR20210066016A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US11249386B2 (en) | 2022-02-15 |
WO2020086932A1 (en) | 2020-04-30 |
JP7288959B2 (ja) | 2023-06-08 |
JP2022505688A (ja) | 2022-01-14 |
KR20210066016A (ko) | 2021-06-04 |
TWI835896B (zh) | 2024-03-21 |
TW202026752A (zh) | 2020-07-16 |
US20200133114A1 (en) | 2020-04-30 |
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