SG11202102989RA - Electrostatic chuck and reaction chamber - Google Patents
Electrostatic chuck and reaction chamberInfo
- Publication number
- SG11202102989RA SG11202102989RA SG11202102989RA SG11202102989RA SG11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA
- Authority
- SG
- Singapore
- Prior art keywords
- reaction chamber
- electrostatic chuck
- chuck
- electrostatic
- chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811183845.3A CN111048460A (zh) | 2018-10-11 | 2018-10-11 | 静电卡盘及反应腔室 |
CN201821648321.2U CN208923079U (zh) | 2018-10-11 | 2018-10-11 | 静电卡盘及反应腔室 |
PCT/CN2019/106684 WO2020073779A1 (zh) | 2018-10-11 | 2019-09-19 | 静电卡盘及反应腔室 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202102989RA true SG11202102989RA (en) | 2021-04-29 |
Family
ID=70164227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202102989RA SG11202102989RA (en) | 2018-10-11 | 2019-09-19 | Electrostatic chuck and reaction chamber |
Country Status (6)
Country | Link |
---|---|
US (1) | US11837491B2 (zh) |
JP (1) | JP7279156B2 (zh) |
KR (1) | KR102434283B1 (zh) |
SG (1) | SG11202102989RA (zh) |
TW (1) | TWI725549B (zh) |
WO (1) | WO2020073779A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN213951334U (zh) * | 2020-10-26 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 一种晶片承载机构及半导体工艺设备 |
CN112331607B (zh) * | 2020-10-28 | 2024-03-26 | 北京北方华创微电子装备有限公司 | 静电卡盘及半导体工艺设备 |
CN115142045B (zh) * | 2021-03-29 | 2023-12-19 | 鑫天虹(厦门)科技有限公司 | 可准确调整温度的承载盘及薄膜沉积装置 |
WO2024091389A1 (en) * | 2022-10-24 | 2024-05-02 | Lam Research Corporation | Heat flow control in a processing tool |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3297771B2 (ja) * | 1993-11-05 | 2002-07-02 | ソニー株式会社 | 半導体製造装置 |
JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
US6138745A (en) * | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
JP2000299371A (ja) | 1999-04-12 | 2000-10-24 | Taiheiyo Cement Corp | 静電チャックデバイス |
JP4236329B2 (ja) | 1999-04-15 | 2009-03-11 | 日本碍子株式会社 | プラズマ処理装置 |
JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
US7161121B1 (en) * | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
JP2006165475A (ja) * | 2004-12-10 | 2006-06-22 | Nippon Dennetsu Co Ltd | 被処理基板の加熱冷却構造 |
US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
JP5237151B2 (ja) * | 2009-02-23 | 2013-07-17 | 三菱重工業株式会社 | プラズマ処理装置の基板支持台 |
KR102103136B1 (ko) * | 2011-09-30 | 2020-04-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 온도 제어되는 정전 척 |
JP5807032B2 (ja) * | 2012-03-21 | 2015-11-10 | 日本碍子株式会社 | 加熱装置及び半導体製造装置 |
CN104377155B (zh) | 2013-08-14 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 静电卡盘以及等离子体加工设备 |
US9847240B2 (en) * | 2014-02-12 | 2017-12-19 | Axcelis Technologies, Inc. | Constant mass flow multi-level coolant path electrostatic chuck |
JP2016082216A (ja) * | 2014-10-09 | 2016-05-16 | 東京エレクトロン株式会社 | 被処理体の温度制御機構、及び多層膜から窒化膜を選択的にエッチングする方法 |
US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
CN208923079U (zh) | 2018-10-11 | 2019-05-31 | 北京北方华创微电子装备有限公司 | 静电卡盘及反应腔室 |
-
2019
- 2019-09-19 US US17/276,748 patent/US11837491B2/en active Active
- 2019-09-19 KR KR1020217007996A patent/KR102434283B1/ko active IP Right Grant
- 2019-09-19 WO PCT/CN2019/106684 patent/WO2020073779A1/zh active Application Filing
- 2019-09-19 JP JP2021517467A patent/JP7279156B2/ja active Active
- 2019-09-19 SG SG11202102989RA patent/SG11202102989RA/en unknown
- 2019-09-23 TW TW108134161A patent/TWI725549B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI725549B (zh) | 2021-04-21 |
JP2022502861A (ja) | 2022-01-11 |
KR102434283B1 (ko) | 2022-08-19 |
US20220051923A1 (en) | 2022-02-17 |
WO2020073779A1 (zh) | 2020-04-16 |
TW202015173A (zh) | 2020-04-16 |
KR20210041080A (ko) | 2021-04-14 |
JP7279156B2 (ja) | 2023-05-22 |
US11837491B2 (en) | 2023-12-05 |
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