SG11202102989RA - Electrostatic chuck and reaction chamber - Google Patents

Electrostatic chuck and reaction chamber

Info

Publication number
SG11202102989RA
SG11202102989RA SG11202102989RA SG11202102989RA SG11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA
Authority
SG
Singapore
Prior art keywords
reaction chamber
electrostatic chuck
chuck
electrostatic
chamber
Prior art date
Application number
SG11202102989RA
Other languages
English (en)
Inventor
Qiwei Huang
Quanyu Shi
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811183845.3A external-priority patent/CN111048460A/zh
Priority claimed from CN201821648321.2U external-priority patent/CN208923079U/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202102989RA publication Critical patent/SG11202102989RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
SG11202102989RA 2018-10-11 2019-09-19 Electrostatic chuck and reaction chamber SG11202102989RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201811183845.3A CN111048460A (zh) 2018-10-11 2018-10-11 静电卡盘及反应腔室
CN201821648321.2U CN208923079U (zh) 2018-10-11 2018-10-11 静电卡盘及反应腔室
PCT/CN2019/106684 WO2020073779A1 (zh) 2018-10-11 2019-09-19 静电卡盘及反应腔室

Publications (1)

Publication Number Publication Date
SG11202102989RA true SG11202102989RA (en) 2021-04-29

Family

ID=70164227

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102989RA SG11202102989RA (en) 2018-10-11 2019-09-19 Electrostatic chuck and reaction chamber

Country Status (6)

Country Link
US (1) US11837491B2 (zh)
JP (1) JP7279156B2 (zh)
KR (1) KR102434283B1 (zh)
SG (1) SG11202102989RA (zh)
TW (1) TWI725549B (zh)
WO (1) WO2020073779A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN213951334U (zh) * 2020-10-26 2021-08-13 北京北方华创微电子装备有限公司 一种晶片承载机构及半导体工艺设备
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备
CN115142045B (zh) * 2021-03-29 2023-12-19 鑫天虹(厦门)科技有限公司 可准确调整温度的承载盘及薄膜沉积装置
WO2024091389A1 (en) * 2022-10-24 2024-05-02 Lam Research Corporation Heat flow control in a processing tool

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297771B2 (ja) * 1993-11-05 2002-07-02 ソニー株式会社 半導体製造装置
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
JP2000299371A (ja) 1999-04-12 2000-10-24 Taiheiyo Cement Corp 静電チャックデバイス
JP4236329B2 (ja) 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP2006165475A (ja) * 2004-12-10 2006-06-22 Nippon Dennetsu Co Ltd 被処理基板の加熱冷却構造
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP5237151B2 (ja) * 2009-02-23 2013-07-17 三菱重工業株式会社 プラズマ処理装置の基板支持台
KR102103136B1 (ko) * 2011-09-30 2020-04-22 어플라이드 머티어리얼스, 인코포레이티드 온도 제어되는 정전 척
JP5807032B2 (ja) * 2012-03-21 2015-11-10 日本碍子株式会社 加熱装置及び半導体製造装置
CN104377155B (zh) 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
US9847240B2 (en) * 2014-02-12 2017-12-19 Axcelis Technologies, Inc. Constant mass flow multi-level coolant path electrostatic chuck
JP2016082216A (ja) * 2014-10-09 2016-05-16 東京エレクトロン株式会社 被処理体の温度制御機構、及び多層膜から窒化膜を選択的にエッチングする方法
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
CN208923079U (zh) 2018-10-11 2019-05-31 北京北方华创微电子装备有限公司 静电卡盘及反应腔室

Also Published As

Publication number Publication date
TWI725549B (zh) 2021-04-21
JP2022502861A (ja) 2022-01-11
KR102434283B1 (ko) 2022-08-19
US20220051923A1 (en) 2022-02-17
WO2020073779A1 (zh) 2020-04-16
TW202015173A (zh) 2020-04-16
KR20210041080A (ko) 2021-04-14
JP7279156B2 (ja) 2023-05-22
US11837491B2 (en) 2023-12-05

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