SG11202102956TA - Sputtering target and method for producing same - Google Patents

Sputtering target and method for producing same

Info

Publication number
SG11202102956TA
SG11202102956TA SG11202102956TA SG11202102956TA SG11202102956TA SG 11202102956T A SG11202102956T A SG 11202102956TA SG 11202102956T A SG11202102956T A SG 11202102956TA SG 11202102956T A SG11202102956T A SG 11202102956TA SG 11202102956T A SG11202102956T A SG 11202102956TA
Authority
SG
Singapore
Prior art keywords
sputtering target
producing same
producing
same
sputtering
Prior art date
Application number
SG11202102956TA
Other languages
English (en)
Inventor
Daiki Shono
Shuhei Murata
Takeo Okabe
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11202102956TA publication Critical patent/SG11202102956TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21D3/00—Straightening or restoring form of metal rods, metal tubes, metal profiles, or specific articles made therefrom, whether or not in combination with sheet metal parts
    • B21D3/10—Straightening or restoring form of metal rods, metal tubes, metal profiles, or specific articles made therefrom, whether or not in combination with sheet metal parts between rams and anvils or abutments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
    • B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
    • B21J1/025—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough affecting grain orientation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
    • B21J1/06—Heating or cooling methods or arrangements specially adapted for performing forging or pressing operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • B21J5/008—Incremental forging
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Powder Metallurgy (AREA)
SG11202102956TA 2018-09-26 2019-09-20 Sputtering target and method for producing same SG11202102956TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018180535 2018-09-26
PCT/JP2019/037136 WO2020066957A1 (ja) 2018-09-26 2019-09-20 スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11202102956TA true SG11202102956TA (en) 2021-04-29

Family

ID=69952126

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102956TA SG11202102956TA (en) 2018-09-26 2019-09-20 Sputtering target and method for producing same

Country Status (8)

Country Link
US (1) US20220033960A1 (zh)
EP (1) EP3859048A4 (zh)
JP (1) JP7145963B2 (zh)
KR (1) KR102623865B1 (zh)
CN (1) CN112771199B (zh)
SG (1) SG11202102956TA (zh)
TW (1) TWI787546B (zh)
WO (1) WO2020066957A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112404461A (zh) * 2020-10-26 2021-02-26 宁波江丰电子材料股份有限公司 一种钛靶材组件的车削方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
JP3659921B2 (ja) * 2002-01-15 2005-06-15 東邦チタニウム株式会社 ターゲット用チタン材の製造方法
JP5428741B2 (ja) * 2009-10-19 2014-02-26 東ソー株式会社 円筒形スパッタリングターゲットの製造方法
JP5472353B2 (ja) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
US10431438B2 (en) * 2013-03-06 2019-10-01 Jx Nippon Mining & Metals Corporation Titanium target for sputtering and manufacturing method thereof
JP5855319B2 (ja) * 2013-07-08 2016-02-09 Jx日鉱日石金属株式会社 スパッタリングターゲット及び、それの製造方法
AT14157U1 (de) 2013-12-20 2015-05-15 Plansee Se W-Ni-Sputtertarget
WO2015151498A1 (ja) * 2014-03-31 2015-10-08 株式会社 東芝 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP5783293B1 (ja) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 円筒型スパッタリングターゲット用素材
JP6600214B2 (ja) * 2015-09-28 2019-10-30 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置
WO2018163861A1 (ja) * 2017-03-06 2018-09-13 三菱マテリアル株式会社 Ｃｕ－Ｎｉ合金スパッタリングターゲット及びその製造方法
JP7174476B2 (ja) * 2017-03-31 2022-11-17 Ｊｘ金属株式会社 タングステンターゲット
JP2018053366A (ja) 2017-10-24 2018-04-05 住友化学株式会社 円筒型ターゲット

Also Published As

Publication number Publication date
EP3859048A4 (en) 2022-07-27
CN112771199A (zh) 2021-05-07
EP3859048A1 (en) 2021-08-04
CN112771199B (zh) 2024-01-16
JP7145963B2 (ja) 2022-10-03
JPWO2020066957A1 (ja) 2021-09-24
US20220033960A1 (en) 2022-02-03
TWI787546B (zh) 2022-12-21
KR102623865B1 (ko) 2024-01-11
WO2020066957A1 (ja) 2020-04-02
KR20210053940A (ko) 2021-05-12
TW202018098A (zh) 2020-05-16

Similar Documents

Publication Publication Date Title
EP3731546A4 (en) SYSTEM FOR POSITIONING A TARGET OBJECT AND POSITIONING METHOD
EP3337914A4 (en) METHOD AND DEVICE FOR CO-SPUTTERING MULTIPLE TARGETS
EP3778984A4 (en) SPUTTERTARGET ELEMENT AND METHOD OF MANUFACTURING THEREOF
EP3467142A4 (en) SPRAYING TARGET AND PROCESS FOR PRODUCING THE SAME
EP3211116A4 (en) Magnetic-material sputtering target and method for producing same
EP3604611A4 (en) CATHODIC SPRAY TARGET AND METHOD OF MANUFACTURING THE SAME
EP3165632A4 (en) Target material for sputtering and method for manufacturing same
KR20180085059A (ko) 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃
EP3687405A4 (en) SYSTEM AND METHOD FOR LOCATING A TARGET SUBJECT
EP3211117A4 (en) Copper alloy sputtering target and method for manufacturing same
EP3369842A4 (en) CATHODIC SPUTTER TARGET AND METHOD FOR PRODUCING THE SAME
SG11201706280XA (en) Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME
EP3187619A4 (en) Cu-Ga SPUTTERING TARGET AND PRODUCTION METHOD FOR Cu-Ga SPUTTERING TARGET
EP3101153A4 (en) Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
KR20180085057A (ko) Al-Te-Cu-Zr 합금으로 이루어지는 스퍼터링 타깃 및 그 제조 방법
EP3818316A4 (en) REFRIGERATOR AND CONTROL PROCEDURES FOR IT
EP3452634C0 (en) MAGNETRON SPRAYING PROCESS
EP3415658A4 (en) CATHODIC SPUTTER TARGET, AND METHOD OF MANUFACTURING THE SAME
EP3604610A4 (en) PRODUCTION PROCESS FOR CYLINDRICAL CATHODIC SPRAY TARGET AND CYLINDRICAL CATHODIC SPRAY TARGET
EP3623987A4 (en) TRACKING METHOD AND TRACKING DEVICE
SG10201912807WA (en) Iron-platinum-based sputtering target and method for manufacturing the same
EP3722455A4 (en) GOLD SPRAY TARGET AND ITS PRODUCTION PROCESS
EP3867374A4 (en) TARGET SCREENING METHODS AND SYSTEMS
EP3862671A4 (en) REFRIGERATOR AND CONTROL METHOD THEREOF
EP3722454A4 (en) GOLD SPRAY TARGET PRODUCTION PROCESS AND GOLD FILM PRODUCTION PROCESS