SG11202101496WA - High density carbon films for patterning applications - Google Patents
High density carbon films for patterning applicationsInfo
- Publication number
- SG11202101496WA SG11202101496WA SG11202101496WA SG11202101496WA SG11202101496WA SG 11202101496W A SG11202101496W A SG 11202101496WA SG 11202101496W A SG11202101496W A SG 11202101496WA SG 11202101496W A SG11202101496W A SG 11202101496WA SG 11202101496W A SG11202101496W A SG 11202101496WA
- Authority
- SG
- Singapore
- Prior art keywords
- high density
- carbon films
- density carbon
- patterning applications
- patterning
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
- 238000000059 patterning Methods 0.000 title 1
Classifications
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- Chemical Vapour Deposition (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201862751213P | 2018-10-26 | 2018-10-26 | |
PCT/US2019/054812 WO2020086241A1 (en) | 2018-10-26 | 2019-10-04 | High density carbon films for patterning applications |
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SG11202101496WA true SG11202101496WA (en) | 2021-05-28 |
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SG11202101496WA SG11202101496WA (en) | 2018-10-26 | 2019-10-04 | High density carbon films for patterning applications |
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US (2) | US11842897B2 (en) |
JP (2) | JP7462626B2 (en) |
KR (1) | KR20210066936A (en) |
CN (1) | CN112740360A (en) |
SG (1) | SG11202101496WA (en) |
TW (2) | TW202415796A (en) |
WO (1) | WO2020086241A1 (en) |
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JP2023064521A (en) * | 2021-10-26 | 2023-05-11 | 東京エレクトロン株式会社 | Apparatus and method for depositing carbon-containing film on substrate |
TWI773628B (en) * | 2022-01-19 | 2022-08-01 | 華邦電子股份有限公司 | Semiconductor structure and method of forming the same |
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US5684669A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Method for dechucking a workpiece from an electrostatic chuck |
MY132894A (en) | 1997-08-25 | 2007-10-31 | Ibm | Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof |
JP2001516940A (en) * | 1997-09-17 | 2001-10-02 | 東京エレクトロン株式会社 | Apparatus and method for detecting and preventing arcing in RF plasma systems |
US6149730A (en) * | 1997-10-08 | 2000-11-21 | Nec Corporation | Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor |
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US20030107865A1 (en) * | 2000-12-11 | 2003-06-12 | Shinsuke Masuda | Wafer handling apparatus and method of manufacturing the same |
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US20120276743A1 (en) * | 2011-04-26 | 2012-11-01 | Jai-Hyung Won | Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same |
TW201309836A (en) | 2011-08-24 | 2013-03-01 | Ritedia Corp | Diamond like carbon film and method of fabricating the same |
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JP2024096717A (en) | 2024-07-17 |
CN112740360A (en) | 2021-04-30 |
WO2020086241A1 (en) | 2020-04-30 |
TW202022149A (en) | 2020-06-16 |
US20240087894A1 (en) | 2024-03-14 |
JP7462626B2 (en) | 2024-04-05 |
US11842897B2 (en) | 2023-12-12 |
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