US20150333213A1 - Diamond-like carbon coatings for substrate carriers - Google Patents
Diamond-like carbon coatings for substrate carriers Download PDFInfo
- Publication number
- US20150333213A1 US20150333213A1 US14/698,395 US201514698395A US2015333213A1 US 20150333213 A1 US20150333213 A1 US 20150333213A1 US 201514698395 A US201514698395 A US 201514698395A US 2015333213 A1 US2015333213 A1 US 2015333213A1
- Authority
- US
- United States
- Prior art keywords
- carrier
- carbon
- diamond
- sub
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 113
- 238000000576 coating method Methods 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000000969 carrier Substances 0.000 title claims abstract description 34
- 238000012545 processing Methods 0.000 claims abstract description 79
- 239000011248 coating agent Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000007789 gas Substances 0.000 claims description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 6
- 239000004917 carbon fiber Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 125000005842 heteroatom Chemical group 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 150000001345 alkine derivatives Chemical class 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 210000002381 plasma Anatomy 0.000 description 40
- 230000008033 biological extinction Effects 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- IAQRGUVFOMOMEM-ARJAWSKDSA-N cis-but-2-ene Chemical compound C\C=C/C IAQRGUVFOMOMEM-ARJAWSKDSA-N 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 ethylene, propylene, 1-butene Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- IAQRGUVFOMOMEM-ONEGZZNKSA-N trans-but-2-ene Chemical compound C\C=C\C IAQRGUVFOMOMEM-ONEGZZNKSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the substrate carrier includes a retaining frame, a sub-carrier retaining surface, and at least one sub-carrier retaining recess configured to laterally retain one or more sub-carriers.
- the substrate carrier also has a diamond-like carbon coating formed on the sub-carrier retaining surface.
- FIG. 2 is a top perspective view of a substrate carrier according to one embodiment described herein.
- FIG. 3 is a top perspective view of a sub-carrier according to one embodiment described herein.
- the exterior wall height may be substantially the same as, greater than, or less than the height of the sub-carriers S.
- the height of the exterior walls 223 may be from about 0.1 mm to about 0.3 mm.
- the carrier 101 does not have the sub-carrier retaining wall members 215 . In other embodiments, the carrier 101 does not have retaining frame center bars 207 . In embodiments where the carrier 101 does not have retaining frame center bars 207 , the sub-carrier retaining wall members 215 may extend from one exterior wall 223 to an opposite exterior wall 223 . In some embodiments, the carrier 101 has a top surface that is completely planar; i.e., the carrier 101 does not have exterior walls 223 , retaining frame center bars 207 , sub-carrier retaining wall members 215 , or sub-carrier retaining recesses 101 A.
- the sub-carrier S may be made of aluminum, stainless steel, graphite, ceramics, carbon fiber, carbon fiber composite, other suitable materials, or combinations thereof.
- the sub-carrier S may optionally include pins or bosses extending therefrom to retain the substrate W thereon.
- the diamond-like carbon coating may contain more than one heteroatom selected from the group consisting of nitrogen, boron, fluorine, titanium, tungsten, and chromium, and the total combined molar % of the dopant species may be up to about 50 molar %, such as between about 10 molar % and about 40 molar %, such as about 30 molar %.
- the experimental conditions for measuring NF 3 etch resistance may be as follows. Argon was flowed into a remote plasma source, such as remote plasma source 124 , of a processing chamber, such as processing chamber 100 . A plasma was then ignited in the remote plasma source 124 . Then NF 3 was flowed into the remote plasma source 124 , and the flow of argon was stopped. The flow rates per substrate surface area were between about 100 sccm/m 2 and about 10,000 sccm/m 2 , such as about 5000 sccm/m 2 . A plasma was generated from the NF 3 in the remote plasma source 124 from an RF power of about 6 kW.
- FIG. 4 depicts a flow diagram of one method for depositing a diamond-like carbon coating on the carrier 101 .
- the method for depositing the diamond-like carbon coating on the carrier 101 has multiple stages. The stages can be carried out in any order or simultaneously (except where the context excludes that possibility), and the method can include one or more other stages which are carried out before any of the defined stages, between two of the defined stages, or after all the defined stages (except where the context excludes that possibility).
- An inert gas may also be flowed into the process volume 106 from the gas source 120 .
- the inert gas may be argon, hydrogen, helium, neon, other suitable gases, or combinations thereof.
- the inert gas may be flowed at a flow rate per substrate surface area of between about 500 sccm/m 2 and about 10000 sccm/m 2 , such as about 4000 sccm/m 2 .
- the applied power was 1.2 kW
- the substrate support temperature was 200° C.
- the deposition rate was about 60 ⁇ /min
- the band gap was 1.8 eV
- the refractive index was about 2.0
- the extinction coefficient was about 0.24
- the internal stress was about ⁇ 10.7 ⁇ 10 9 dyne/cm 2
- the NF 3 etch rate was about 330 ⁇ /hr.
- the pressure was 9 Torr
- the applied power was 3 kW
- the substrate support temperature was 200° C.
- the deposition rate was about 460 ⁇ /min
- the band gap was about 3.8 eV
- the refractive index (measured at 633 nm) was about 1.5
- the extinction coefficient (measured at 400 nm) was about 0.006
- the internal stress was about 0.19 ⁇ 10 9 dyne/cm 2 .
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
Abstract
A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into a processing chamber and dissociating the carbon-containing gas. Furthermore, a method of quick removal of diamond-like carbon coatings from processing chamber walls, processing chamber components, substrate carriers, and other objects is provided.
Description
- This application claims priority to U.S. provisional patent application Ser. No. 62/000,376, filed May 19, 2014, which is herein incorporated by reference.
- 1. Field
- Embodiments of the present disclosure generally relate to equipment for fabricating photovoltaic or solar cells.
- 2. Description of the Related Art
- Photovoltaic (PV) cells are devices which convert sunlight into direct current (DC) electrical power. A typical PV cell includes a p-type silicon substrate, typically less than about 0.3 mm thick, with a thin layer of an n-type silicon material disposed on top of the p-type substrate. When exposed to sunlight, the p-n junction generates pairs of free electrons and holes. An electric field formed across a depletion region of the p-n junction separates the free holes from the free electrons, which may flow through an external circuit or electrical load. The voltage and current generated by the PV cell are dependent on the material properties of the p-n junction, the interfacial properties between deposited layers, and the surface area of the device.
- Conventional methods of forming p-n junctions typically include forming the n-type and/or p-type layers via deposition processes, such as plasma enhanced chemical vapor deposition (PECVD). In order to increase the throughput of the deposition processes, multiple substrates are simultaneously processed by placing multiple substrates on a substrate carrier during deposition. However, conventional substrate carriers may suffer from short life spans. Additionally, deposition processes performed using substrate carriers may result in increased particle generation during deposition processes. Particle generation during deposition processes may lead to defective or low performance PV cells.
- As the foregoing illustrates, there is a need in the art for improved substrate carriers.
- A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into the processing chamber and dissociating the carbon-containing gas.
- One embodiment of the present disclosure includes a substrate carrier. The substrate carrier includes a retaining frame, a sub-carrier retaining surface, and at least one sub-carrier retaining recess configured to laterally retain one or more sub-carriers. The substrate carrier also has a diamond-like carbon coating formed on the sub-carrier retaining surface.
- Another embodiment of the present disclosure includes a method of coating a substrate carrier. The method includes positioning a substrate carrier in a processing chamber. The substrate carrier includes a retaining frame, a sub-carrier retaining surface, and at least one sub-carrier retaining recess configured to laterally retain one or more sub-carriers. The method further includes blanket depositing a diamond-like carbon coating over the sub-carrier retaining surface.
- So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
-
FIG. 1 is a schematic cross-sectional view of a processing chamber for processing a batch of substrates according to one embodiment of the present disclosure. -
FIG. 2 is a top perspective view of a substrate carrier according to one embodiment described herein. -
FIG. 3 is a top perspective view of a sub-carrier according to one embodiment described herein. -
FIG. 4 is a flow diagram illustrating one embodiment of a method for depositing a coating. - To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the Figures. Additionally, elements of one embodiment may be advantageously adapted for utilization in other embodiments described herein.
- A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into a processing chamber and dissociating the carbon-containing gas.
-
FIG. 1 is a schematic cross-sectional view of aprocessing chamber 100 for processing a batch of substrates according to one embodiment of the present disclosure. One suitable processing chamber that may benefit from the embodiments disclosed herein includes a processing chamber that is part of a Gen 2 to Gen 8.5 processing platform available from Applied Materials, Inc., located in Santa Clara, Calif. Other processing chambers and processing systems available from other manufacturers may likewise benefit from the embodiments disclosed herein. - The
processing chamber 100 generally includeswalls 102, abottom 104, a showerhead 110, and asubstrate support 130, which define aprocess volume 106. Theprocess volume 106 is accessed through anopening 108 such that asubstrate carrier 101 may be transferred in and out of theprocessing chamber 100. The wafer carrier may have one or more sub-carriers S disposed thereon. Each sub-carrier S may have one or more substrates W (shown inFIG. 3 ) disposed thereon. The substrates W may be made of, for example, a glass or semiconductor material. Thecarrier 101 has at least onesub-carrier retaining recess 101A formed therein (shown inFIG. 2 ). Thesub-carrier retaining recess 101A is configured to hold and retain the sub-carriers S during the transferring in and out of theprocessing chamber 100. - The
substrate support 130 includes asubstrate receiving surface 132 for supporting thecarrier 101 and astem 134 coupled to alift system 136 to raise and lower thesubstrate support 130. Ashadow frame 133 may be optionally placed over periphery of thecarrier 101.Lift pins 138 are movably disposed through thesubstrate support 130 to move thecarrier 101 to and from thesubstrate receiving surface 132. Thesubstrate support 130 may also include heating and/orcooling elements 139 to maintain thesubstrate support 130 at a desired temperature. One ormore grounding assemblies 142 are coupled to thewalls 102, thesubstrate support 130, and/or other chamber components by attachingdevices 144. - The showerhead 110 is coupled to a
backing plate 112 at its periphery by asuspension 114. Agas source 120 is coupled to thebacking plate 112 and provides gases through atube 131, which passes through thebacking plate 112. The gases exit thetube 131 and pass through a plurality ofholes 111 in the showerhead 110 to enter theprocess volume 106. Avacuum pump 109 is coupled to theprocessing chamber 100 to control theprocess volume 106 at a desired pressure. Apower source 122 is coupled to thebacking plate 112 and/or to the showerhead 110 to provide power to the showerhead 110, creating an electric field between the showerhead 110 and thesubstrate support 130 and generating a plasma from the gases in theprocess volume 106. Thepower source 122 may be configured to supply, for example, RF or VHF power. Thepower source 122 may supply RF power at, for example, about 13.56 MHz. Thepower source 122 may supply VHF power at, for example, between about 20 MHz and about 300 MHz. - A
remote plasma source 124, such as an inductively coupled remote plasma source, may optionally be coupled between thegas source 120 and thebacking plate 112. The processing of batches of substrates W to form PV cells may include generating a plasma from a cleaning gas in theremote plasma source 124 and flowing the excited species generated from the plasma into theprocess volume 106. The cleaning gas may be further excited by thepower source 122 provided to the showerhead 110. Suitable cleaning gases include but are not limited to NF3, F2, and SF6. -
FIG. 2 is a top perspective view of a representative embodiment of thecarrier 101. As shown inFIG. 2 , thecarrier 101 includes a retainingframe 203 and 16 sub-carrier retaining recesses 101A. The retainingframe 203 includesexterior walls 223 and asub-carrier retaining surface 213. Theexterior walls 223 extend from thesub-carrier retaining surface 213 and have atop surface 224 and aninterior surface 225. The height of theexterior walls 223, measured from thesub-carrier retaining surface 213, may be selected based on the dimensions of the one or more sub-carriers S to be supported on thesub-carrier retaining surface 213. The exterior wall height may be substantially the same as, greater than, or less than the height of the sub-carriers S. For example, in a configuration where the sub-carriers to be supported by thesub-carrier retaining surface 213 have dimensions 624 mm×624 mm×0.2 mm, the height of theexterior walls 223 may be from about 0.1 mm to about 0.3 mm. - As shown in
FIG. 2 , eachsub-carrier retaining recess 101A is separated from each adjacentsub-carrier retaining recess 101A by a sub-carrier retainingwall member 215 or a retainingframe center bar 207. The sub-carrierretaining wall members 215 function to separate and retain the sub-carriers S on thecarrier 101. Retaining frame center bars 207 function to separate the sub-carriers S on thecarrier 101 and also function to provide structural stability to thecarrier 101. In some embodiments, the retaining frame center bars 207 and the sub-carrier retainingwall members 215 are the same height. In other embodiments, the retaining frame center bars 207 and the sub-carrier retainingwall members 215 have different heights, for example, as shown inFIG. 2 , - As shown in
FIG. 2 , a pair of intersecting sub-carrier retainingwall members 215 is positioned in each quadrant defined by the retaining frame center bars 207. In other embodiments, the pair of sub-carrier retainingwall members 215 may not intersect in the quadrant, or the pair of sub-carrier retainingwall members 215 may intersect at different angles than are shown inFIG. 2 . In other embodiments, fewer than two sub-carrierretaining wall members 215 may be positioned in each quadrant. For example, one or zeroretaining wall members 215 may be positioned in each quadrant. In other embodiments, more than two sub-carrierretaining wall members 215 may be positioned in each quadrant. In embodiments where more than two sub-carrierretaining wall members 215 are positioned in each quadrant, some of the sub-carrier retainingwall members 215 may intersect and others may not intersect. For example, the more than two sub-carrierretaining wall members 215 may form a grid. As shown, theinterior surface 225 of theexterior walls 223, the sub-carrier retainingwall members 215, and the retaining frame center bars 207 have vertical edges extending from thesub-carrier retaining surface 213; however, in other embodiments, the edges may be sloped. - As shown in
FIG. 2 , thecarrier 101 is configured to retain 16 sub-carriers S. In other embodiments, thecarrier 101 may be configured to hold fewer or more than 16 sub-carriers S. For example, in one embodiment, thecarrier 101 is configured to hold up to about thirty sub-carriers S at a time in a planar array. In one embodiment, thecarrier 101 is configured to hold between about 2 and about 4 sub-carriers S at a time in a planar array. - In some embodiments, the
carrier 101 does not have the sub-carrier retainingwall members 215. In other embodiments, thecarrier 101 does not have retaining frame center bars 207. In embodiments where thecarrier 101 does not have retaining frame center bars 207, the sub-carrier retainingwall members 215 may extend from oneexterior wall 223 to an oppositeexterior wall 223. In some embodiments, thecarrier 101 has a top surface that is completely planar; i.e., thecarrier 101 does not haveexterior walls 223, retaining frame center bars 207, sub-carrier retainingwall members 215, or sub-carrier retaining recesses 101A. In other embodiments, thecarrier 101 has a top surface that is completely planar and has a plurality ofsub-carrier recesses 101A. The plurality ofsub-carrier recesses 101A may have lateral dimensions of between about 125 mm to about 156 mm×about 125 mm to about 156 mm. The plurality ofsub-carrier recesses 101A may have a depth of between about 0.2 mm to about 0.3 mm. In other embodiments, the dimensions of the plurality ofsub-carrier recesses 101A may be larger or smaller. - As shown in
FIG. 2 , thecarrier 101 is square. In other embodiments, thecarrier 101 may be rectangular, circular, or have a different shape. As shown, thesub-carrier retaining surface 213 is substantially planar. In some embodiments, thesub-carrier retaining surface 213 is concave or convex. Thecarrier 101 may be made of aluminum, stainless steel, graphite, ceramics, carbon fiber, carbon fiber composite, other suitable materials, or combinations thereof. Thecarrier 101 may optionally include pins or bosses extending therefrom to retain the sub-carriers S thereon. -
FIG. 3 is a top-perspective view of a representative sub-carrier S with a substrate W positioned thereon. As shown, the sub-carrier includes a retainingframe 303 and a plurality of substrate-retainingrecesses 301A. Six substrate-retainingrecesses 301A are shown, but other embodiments may include any number of substrate-retainingrecesses 301A. For example, other embodiments may include up to about 100 substrate-retainingrecesses 301A, for example, between 20 and 40 substrate-retainingrecesses 301A. Other embodiments may include more than 100 substrate-retainingrecesses 301A. The number of substrate-retainingrecesses 301A to be included within the retainingframe 303 will depend on, for example, substrate size, sub-carrier size, carrier size, processing chamber size, substrate support surface size, and the desired number of substrates W to process in each batch. - The dimensions of the substrate-retaining
recesses 301A will depend on the dimensions of the substrates W to be positioned within the substrate retaining recesses 301A. The lateral dimensions of the substrate retaining recesses 301A will be larger than the lateral dimensions of the substrate W. For example, each lateral dimension of the substrate-retainingrecess 301A may be about 1 mm larger than each lateral dimension of the substrate W. The depth of the substrate-retainingrecesses 301A may he between about 0.1 mm and about 3 mm deeper than the thickness of the substrate W. - The sub-carrier S may be made of aluminum, stainless steel, graphite, ceramics, carbon fiber, carbon fiber composite, other suitable materials, or combinations thereof. The sub-carrier S may optionally include pins or bosses extending therefrom to retain the substrate W thereon.
- In one embodiment, the
carrier 101 has a coating formed thereon. The coating may cover the retainingframe 203, thesub-carrier retaining surface 213, the sub-carrier retaining recesses 101A, theexterior walls 223, the optional retaining frame center bars 207, the optional sub-carrier retainingwall members 215, and/or the other surfaces of thecarrier 101. The coating of thecarrier 101 may be a diamond-like carbon coating. A diamond-like carbon coating includes a solid material having a mixture of sp3 and sp2 bonds between carbon atoms. The thickness of the coating may be between about 0.1 μm and about 200 μm, such as between about 0.5 μm and about 20 μm, such as about 2 μm. The thickness of the coating may be substantially uniform across thesub-carrier retaining surface 213 and the other surfaces. - In some embodiments, the diamond-like carbon coating contains carbon and hydrogen. In other embodiments, the diamond-like carbon coating may contain carbon and hydrogen and also be doped with one or more heteroatoms. The inclusion of dopant atoms allows the properties of the diamond-like carbon coating to be tuned. The one or more heteroatoms may he, for example, nitrogen, boron, fluorine, titanium, tungsten, chromium, or combinations thereof. Doping with one or more of N, B, F, Ti, W, and Cr may improve the electrical, mechanical, thermal, or chemical properties of the diamond-like carbon coating. For example, nitrogen dopants may make the diamond-like carbon coating more similar to pure diamond, harder, and more conductive. Boron dopants may make the diamond-like carbon coating more resistant to oxidation, stabilize sp3 bonding, have reduced internal stress, and retain high hardness, low friction, and wear. Fluorine dopants may make the diamond-like carbon coating harder, more resistant to chemical attack, have a lower coefficient of friction (which may lead to less particle generation during processing), improve hydrophobic properties, and reduce hydrogen content and internal stress. In representative embodiments, the diamond-like carbon coating may contain one heteroatom selected from the group consisting of nitrogen, boron, fluorine, titanium, tungsten, and chromium, and the molar % of that dopant atom may be up to about 50 molar %, such as between about 10 molar % and about 40 molar %, such as about 30 molar %. In other embodiments, the diamond-like carbon coating may contain more than one heteroatom selected from the group consisting of nitrogen, boron, fluorine, titanium, tungsten, and chromium, and the total combined molar % of the dopant species may be up to about 50 molar %, such as between about 10 molar % and about 40 molar %, such as about 30 molar %.
- The properties of the diamond-like carbon coatings can also be tuned based on the processing parameters. Representative properties of the coatings that can be tuned include the band gap, the refractive index, the extinction coefficient, the internal stress, the coefficient of friction, the etch rate, and the surface hardness. For example, representative properties of diamond-like carbon coatings comprising carbon and hydrogen can be tuned as follows. The band gap of the coatings can be tuned between about 0.9 eV and about 4 eV. The band gap was measured at 25° C. by spectroscopic ellipsometry. The refractive index can be tuned between about 1.5 and about 2.3. The refractive index was measured at 633 nm by spectroscopic ellipsometry. The extinction coefficient of the coatings can be tuned between about 0.01 and about 0.40. The extinction coefficient was measured at 400 nm by spectroscopic ellipsometry. The intrinsic stress of the coatings can be tuned between about −40×109 dyne/cm2 to about 1×109 dyne/cm2. The intrinsic stress was measured by a film stress measurement system, such as a KLA-Tencor Flexus tool.
- Representative properties of diamond-like carbon coatings comprising carbon, hydrogen, and nitrogen can be tuned as follows. The band gap can be tuned between about 0.9 eV and about 1.8 eV. The refractive index can be tuned between about 1.8 and about 2.3. The extinction coefficient can be tuned between about 0.2 and about 0.40. The internal stress can he tuned between about −32×109 dyne/cm2 to about 0.9×109 dyne/cm2.
- The diamond-like carbon coatings disclosed herein may also have a high etching resistance to conventional chamber cleaning processes, which will allow for the
carriers 101 to have a longer lifespan. The fabrication of a PV cell requires a series of processing stages. In between processing stages, theprocessing chamber 100 may be cleaned, such as with a remotely generated NF3 plasma. Thecarrier 101 may be positioned within theprocessing chamber 100 during the cleaning process. Thus, acarrier 101 that has a low etch resistance to cleaning plasmas, such as NF3 plasmas, will have a short lifespan. Contrarily, acarrier 101 with a high etch resistance to conventional cleaning processes increases will have a long lifespan. An increased lifespan of carriers can decrease the cost of ownership for the fabrication facilities and increase throughput since less time and money will be consumed replacing carriers. - The experimental conditions for measuring NF3 etch resistance may be as follows. Argon was flowed into a remote plasma source, such as
remote plasma source 124, of a processing chamber, such asprocessing chamber 100. A plasma was then ignited in theremote plasma source 124. Then NF3 was flowed into theremote plasma source 124, and the flow of argon was stopped. The flow rates per substrate surface area were between about 100 sccm/m2 and about 10,000 sccm/m2, such as about 5000 sccm/m2. A plasma was generated from the NF3 in theremote plasma source 124 from an RF power of about 6 kW. The radicals generated by theremote plasma source 124 were thereafter flowed into theprocessing volume 106, where the test carriers with the diamond-like carbon coatings were positioned. The etching was performed while thesubstrate support 130 was maintained at about 200° C. and the pressure of theprocessing chamber 100 was maintained at between about 100 mTorr to about 500 mTorr. The spacing was about 1500 mill. The test carriers had a surface area of about 4300 cm2. The etch rate of the test carriers was as low as about 30 Å/hr. - Like the properties listed above, the etch rate of a carrier to an NF3 plasma can also be tuned based on processing parameters and doping. For example, the etch rate to a NF3 plasma can be tuned to be a substantially low. A substantially low NF3 etch rate is defined herein to be less than about 50 Å/hr, measured by the conditions set forth above. The etch rate of diamond-like carbon coatings comprising carbon and hydrogen can be tuned between about 30 Å/hr and about 330 Å/hr. Fine tuning of the etch rate is possible. For example, the etch rate of diamond-like carbon coatings comprising carbon and hydrogen can be tuned between about 30 Å/hr and about 50 Å/hr. Diamond-like carbon coatings comprising carbon, hydrogen, and nitrogen can likewise be tuned to have a substantially low NF3 etch rate while still having a high etch rate for silicon films, such as greater than about 400 Å/min.
-
FIG. 4 depicts a flow diagram of one method for depositing a diamond-like carbon coating on thecarrier 101. The method for depositing the diamond-like carbon coating on thecarrier 101 has multiple stages. The stages can be carried out in any order or simultaneously (except where the context excludes that possibility), and the method can include one or more other stages which are carried out before any of the defined stages, between two of the defined stages, or after all the defined stages (except where the context excludes that possibility). - At
stage 401, thecarrier 101 is positioned in theprocessing chamber 100, such as on thesubstrate receiving surface 132 of thesubstrate support 130. For example, thecarrier 101 may be positioned so that thesub-carrier retaining surface 213 is facing the showerhead 110. Thecarrier 101 may have no sub-carriers S positioned thereon. Alternatively, thecarrier 101 may have one or more sub-carriers S positioned thereon. In some embodiments wherein thecarrier 101 has sub-carrier retaining recesses 101A, at least one of thesub-carrier retaining recesses 101A does not have a sub-carrier S positioned thereon. In other embodiments, at least half of the sub-carrier retaining recesses 101A do not have a sub-carrier S positioned thereon. In some embodiments, thecarrier 101 does not have a coating thereon prior to being positioned on thesubstrate receiving surface 132. For example, thecarrier 101 may not have a diamond-like carbon coating thereon prior to being positioned on thesubstrate receiving surface 132. Alternatively, thecarrier 101 may have a diamond-like carbon coating or another coating thereon prior to being positioned on thesubstrate receiving surface 132. - At
optional stage 402, the processing chamber conditions are adjusted. The temperature of thesubstrate support 130 may be maintained at between about 50° C. and about 500° C., such as between about 200° C. and about 400° C., such as about 350° C. Alternatively, thesubstrate support 130 may be maintained at about 200° C. or about 380° C. The pressure of theprocessing chamber 100 may be maintained at between about 100 mTorr and about 10000 mTorr, such as between about 500 mTorr and about 5000 mTorr. In other embodiments, the pressure of theprocessing chamber 100 may be maintained between about 200 mTorr and about 750 mTorr. The spacing may be between about 400 mil and about 1200 mil, such as between about 600 mil and about 1000 mil, such as about 800 mil. In some embodiments, the processing chamber conditions may be adjusted prior to positioning thecarrier 101 in theprocessing chamber 100. - At
stage 403, processing gases are flowed into theprocessing chamber 100. The processing gases may include, for example, carbon-containing gases, dopant gases, and inert gases. A carbon-containing gas is flowed into theprocess volume 106 from thegas source 120. The carbon-containing gas may include one or more hydrocarbon gases, such as one or more alkanes, one or more alkenes, one or more alkynes, one or more aromatic hydrocarbons, or combinations thereof. Representative alkanes include methane, ethane, propane, isobutane, cyclopentane, cyclohexane, and methylcylohexane. Representative alkenes include ethylene, propylene, 1-butene, (Z)-2-butene, (E)-2-butene, isobutylene, and cyclohexene. Representative alkynes include acetylene, propyne, and 1-butyne. Representative aromatic hydrocarbons include benzene, naphthalene, toluene, and xylene. The carbon-containing gas may be flowed at a flow rate per carrier surface area of between about 500 sccm/m2 and about 5000 sccm/m2, such as about 2000 sccm/m2. - A dopant gas may optionally be flowed into the
process volume 106 from thegas source 120. The dopant gas may contain nitrogen atoms, boron atoms, fluorine atoms, titanium atoms, tungsten atoms, chromium atoms, other atoms, or combinations thereof. Representative nitrogen dopant gases include nitrogen, ammonia, and hydrazine. Representative boron dopant gases include diborane, trimethyl boron, and boron trifluoride. Representative fluorine dopants include NF3, SF6, SF4, F2, CF4, and CF2F6. Representative titanium dopant gases include titanium isopropoxide (Ti[OCH2CH3]4). In other embodiments, the carbon-containing gas may also contain the dopant atom, such as in an in situ doping process. For example, methylamine or trimethylamine may be used to dope with nitrogen. The dopant gas may be flowed at a flow rate per carrier surface area of between about 180 sccm/m2 and about 2000 sccm/m2, such as about 500 sccm/m2. In other embodiments, the diamond-like carbon coating can be doped after deposition, such as by an ion implantation process or a diffusion process. - An inert gas may also be flowed into the
process volume 106 from thegas source 120. The inert gas may be argon, hydrogen, helium, neon, other suitable gases, or combinations thereof. The inert gas may be flowed at a flow rate per substrate surface area of between about 500 sccm/m2 and about 10000 sccm/m2, such as about 4000 sccm/m2. - In some embodiments, the mixture of gases flowing into the
processing chamber 100 includes only the carbon-containing gas or gases and the inert gas or gases. In other embodiments, the mixture of gases flowing into theprocessing chamber 100 consists essentially of the carbon-containing gas or gases and the inert gas or gases. In some embodiments, the mixture of gases flowing into theprocessing chamber 100 includes only the carbon-containing gas or gases, the inert gas or gases, and the dopant gas or gases. In other embodiments, the mixture of gases flowing into theprocessing chamber 100 consists essentially of the carbon-containing gas or gases, the inert gas or gases, and the dopant gas or gases. In other embodiments, gases in addition to the carbon-containing gas or gases, the dopant gas or gases, and the inert gas or gases may be flowed into theprocessing chamber 100. - At
stage 404, a diamond-like carbon coating is deposited on thecarrier 101. In one embodiment, thepower source 122 provides either a radio frequency (RF) power or a very high frequency (VHF) power to the showerhead 110 through thebacking plate 112. The RF power may have a frequency of, for example, about 13.56 MHz. The VHF power may have a frequency of, for example, between about 20 MHz and about 150 MHz, such as about 27 MHz or about 40 MHz. In other embodiments, the VHF power may be higher than about 40 MHz. The applied power may be between about 0.2 W/cm2 and about 1.0 W/cm2. The applied power may ignite a plasma in theprocess volume 106 from gases flowed therein. The plasma may activate the gases in theprocess volume 106. The chemical bonds of the carbon-containing gases and/or the optional dopant gases may be dissociated by the applied power and/or the active species generated by the ignited plasma. In embodiments where a dopant gas is used, the carbon-containing gas may react to form a bond between a carbon atom of the carbon-containing gas and a heteroatom of the dopant gas. The dissociated and/or activated species may combine to deposit a diamond-like carbon coating on thecarrier 101. For example, the diamond-like carbon coating may be blanket deposited on thecarrier 101. The diamond-like carbon coating may be conformally deposited over thecarrier 101. The power may continue to be applied until the diamond-like carbon coating reaches the desired thickness. For example, the power may continue to be applied until the thickness of the coating is between about 0.1 μm and about 200 μm, such as between about 0.5 μm and about 20 μm, such as about 2 μm. After the diamond-like carbon coating is deposited to the desired thickness, thecarrier 101 may be removed from theprocessing chamber 100. - In an alternative embodiment, a plasma may be generated from the inert gas in a remote plasma source, such as
remote plasma source 124, and the reactive species may thereafter be flowed into theprocess volume 106 to deposit the diamond-like carbon coating. In other embodiments, the plasma may be generated by other methods, such as by an inductively coupled plasma source or by a microwave generator. - As mentioned above, the properties of the diamond-like carbon coating can be tuned by varying the processing conditions. For example, diamond-like carbon coatings deposited using CH4 as the carbon-containing gas with a flow rate of about 2000 sccm/m2 and argon as the inert gas with a flow rate of about 4000 sccm/m2 have the following properties when deposited according to the following conditions. The properties described below were determined using the techniques described above. When the pressure was 200 mTorr, the applied power was 1.2 kW, and the substrate support temperature was 200° C.; the deposition rate was about 60 Å/min; the band gap was 1.8 eV; the refractive index (measured at 633 nm) was about 2.0; the extinction coefficient (measured at 400 nm) was about 0.24; the internal stress was about −10.7×109 dyne/cm2; and the NF3 etch rate was about 330 Å/hr.
- When the pressure was 9 Torr, the applied power was 3 kW, and the substrate support temperature was 200° C.; the deposition rate was about 460 Å/min; the band gap was about 3.8 eV; the refractive index (measured at 633 nm) was about 1.5, the extinction coefficient (measured at 400 nm) was about 0.006; and the internal stress was about 0.19×109 dyne/cm2.
- When the pressure was 200 mTorr, the applied power was 1.2 kW, and the substrate support temperature was 380° C.; the deposition rate was about 30 Å/min; the band gap was about 1.6 eV; the refractive index (measured at 633 nm) was about 2.2; the extinction coefficient (measured at 400 nm) was about 0.30; the internal stress was about −32×109 dyne/cm2; and the NF3 etch rate was about 150 Å/hr.
- When the pressure was 750 mTorr, the applied power was 1.6 kW, and the substrate support temperature was 380° C.; the deposition rate was about 30 Å/min; the band gap was about 1.5 eV; the refractive index (measured at 633 nm) was about 2.1; the extinction coefficient (measured at 400 nm) was about 0.40; the internal stress was about −30×109 dyne/cm2; and the NF3 etch rate was about 30 Å/hr.
- When the pressure was 9 Torr, the applied power was 3 kW, and the substrate support temperature was 380° C.; the deposition rate was about 140 Å/min; the band gap was about 1.6 eV; the refractive index (measured at 633 nm) was about 2.1; the extinction coefficient (measured at 400 nm) was about 0.30; and the internal stress was about 0.18×109 dyne/cm2.
- When the pressure was 5 Torr, the applied power was 3 kW, and the substrate support temperature was 380° C.; the deposition rate was about 520 Å/min; the band gap was about 1.7 eV; the refractive index (measured at 633 nm) was about 1.8; the extinction coefficient (measured at 400 nm) was about 0.21; and the internal stress about was 0.26×109 dyne/cm2.
- In a nitrogen-doped diamond-like carbon coating deposited using CH4 as the carbon-containing gas with a flow rate of 4000 sccm/m2, nitrogen as the dopant gas at a flow rate of 1500 sccm/m2, and argon as the inert gas at a flow rate of 8000 sccm/m2, the following properties were obtained from the following conditions. When the pressure was 750 mTorr, the applied power was 1.6 kW, and the substrate support temperature was 380° C.; the deposition rate was about 14 Å/min; the band gap was about 1.7 eV; the refractive index (measured at 633 nm) was about 2.3; the extinction coefficient (measured at 400 nm) was about 0.40; the internal stress was about −30×109 dyne/cm2; and the NF3 etch rate was about 50 Å/hr. When the pressure was 5 Torr, the applied power was 3 kW, and the substrate support temperature was 380° C.; the deposition rate was about 60 Å/min; the band gap was about 0.92 eV; the refractive index (measured at 633 nm) was about 1.8; the extinction coefficient (measured at 400 nm) was about 0.32; and the internal stress was about 0.89×109 dyne/cm2.
- At
optional stage 405, a cleaning process may be performed in theprocessing chamber 100 to remove any diamond-like carbon deposits that may have formed on the processing chamber was or components. The cleaning process may be performed after thecarrier 101 is removed from theprocessing chamber 100. Alternatively, the cleaning process may be performed while thecarrier 101 remains in theprocessing chamber 100. - During the cleaning process, the processing chamber conditions may be adjusted. For example, the temperature of the
substrate support 130 may be maintained at between about 100° C. and about 500° C., such as between about 200° C. and about 400° C., such as about 300° C. The pressure of theprocessing chamber 100 may be maintained at between about 100 mTorr and about 1000 mTorr, such as between about 200 mTorr and about 500 mTorr, such as about 250 mTorr. The spacing may be between about 1000 mil and about 2000 mil, such as between about 1200 mil and about 1600 mil, such as about 1500 mil. In other embodiments, the spacing may be between about 4000 mil and about 5000 mil, such as between about 4200 mil and about 4800 mil, such as about 4500 mil. - During the cleaning process, gases may be flowed into the
remote plasma source 124 and then into theprocess volume 106 of theprocessing chamber 100. For example, one or more of N2O, NF3, Ar, N2, and O2 may be flowed into theremote plasma source 124. In one embodiment, a mixture of N2O, NF3, Ar, and N2 is flowed into theremote plasma source 124 from thegas source 120. In an embodiment having a chamber volume of 144 liters, the flow rates may be as follows. N2O may be flowed into theremote plasma source 124 from thegas source 120 at a flow rate per processing chamber volume of between about 1 sccm/liter and about 50 sccm/liter, such as about 10 sccm/liter. NF3 may also be flowed into theremote plasma source 124 from thegas source 120 at a flow rate per processing chamber volume of between about 1 sccm/liter and about 30 sccm/liter, such as about 3 sccm/liter. Argon may also be flowed into theremote plasma source 124 from thegas source 120 at a flow rate per processing chamber volume of between about 1 sccm/liter and about 30 sccm/liter, such as about 5 sccm/liter. N2 may also be flowed into theremote plasma source 124 from thegas source 120 at a flow rate per processing chamber volume of between about 1 sccm/liter and about 30 sccm/liter, such as about 5 sccm/liter. Additional gases may also be flowed into theremote plasma source 124. - In another embodiment, O2 may be used in addition to or in place of N2O. For example, O2 may be flowed into the
remote plasma source 124 from thegas source 120 at a flow rate per processing chamber volume of between about 1 sccm/liter and about 50 sccm/liter, such as about 10 sccm/liter. - To generate reactive species to perform the cleaning process, a power may be applied to the
remote plasma source 124 from a power source (not shown). For example, the power applied to the remote plasma source may be between about 4 kW and about 8 kW, such as between about 5 kW and about 7 kW, such as about 6 kW. - An RF power may also be applied to the showerhead 110 by the
power source 122. Thepower source 122 may supply RF power at, for example, about 13.56 MHz. The applied RF power may be between about 1 kW and about 2 kW, such as about 1.5 kW. In another embodiment, the power may be between 2 kW and about 4 kW, such as about 3 kW. For example, if the spacing is about 1500 mil, the applied RF power may be about 1.5 kW. In another example, if the spacing is about 4500 mil, the applied power may be about 3 kW. In another embodiment, the RF power is applied to thebacking plate 112 instead of or in addition to being applied to the showerhead 110. - Embodiments of the cleaning process disclosed herein have demonstrated a very high etch rate to the diamond-like carbon deposits formed on the walls of the
processing chamber 100 and the components of theprocessing chamber 100. The measured etch rate of one embodiment is greater than about 4400 Å/minute. Compared to processes using only NF3 or only NF3 and argon, the etch rate of the measured embodiment is about 3500 times faster and about 4 times faster, respectively. - In alternative embodiments, the cleaning process is used to remove a diamond-like carbon coating from a
carrier 101. In some embodiments, a new diamond-like carbon coating may be applied to thecarrier 101 after the diamond-like carbon coating is removed. In other embodiments, a different coating may be applied to thecarrier 101 after the diamond-like carbon coating is removed. In some embodiments, the cleaning process disclosed herein is used to clean diamond-like carbon deposits formed on the walls of theprocessing chamber 100 from processes other than depositing a diamond-like carbon coating on asubstrate carrier 101. - The previously described embodiments have many advantages, including the following. The diamond-like carbon coatings can be deposited on the carriers in the same processing chambers used to process the substrates. The diamond-like carbon coatings have a very high etch resistance to NF3 plasma, which the carriers may be exposed to during processing the substrates. The NF3 etch resistance leads to a dramatic increase in the lifespan of the carriers. The diamond-like carbon coatings have a very low coefficient of friction and very high surface hardness, which will result in minimal wafer surface damage, low particle generation, and high wear resistance. Through doping and/or varying processing conditions, the electrical, mechanical, thermal, and chemical properties of the diamond-like carbon coatings can be readily tuned. Moreover, by depositing a diamond-like carbon coating over conventional carriers, such as graphite carriers, the particles generated during processing can be reduced. Additionally, by depositing the diamond-like carbon coating over a porous or other carrier, outgassing of the carrier during deposition processes can be reduced. Embodiments disclosed herein also allow for quick removal of diamond-like carbon coatings from processing chamber walls, processing chamber components, substrate carriers, and other objects. The aforementioned advantages are illustrative and not limiting. It is not necessary for all embodiments to have all the advantages.
- While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A substrate carrier comprising:
a retaining frame;
a sub-carrier retaining surface;
at least one sub-carrier retaining recess configured to laterally retain one or more sub-carriers; and
a diamond-like carbon coating formed on the sub-carrier retaining surface.
2. The substrate carrier of claim 1 , wherein the diamond-like carbon coating has a thickness between about 0.1 μm and about 200 μm.
3. The substrate carrier of claim 2 , wherein the substrate carrier comprises at least one retaining frame center bar.
4. The substrate carrier of claim 2 , wherein the thickness of the diamond-like carbon coating is substantially uniform across the sub-carrier retaining surface.
5. The substrate carrier of claim 2 , wherein the diamond-like carbon coating comprises dopant atoms selected from the group consisting of boron, nitrogen, fluorine, titanium, tungsten, chromium, and combinations thereof, and wherein the molar % of dopants is up to about 30 molar %.
6. The substrate carrier of claim 2 , wherein the diamond-like carbon coating comprises up to about 30 molar % boron.
7. The substrate carrier of claim 2 , wherein the diamond-like carbon coating comprises up to about 30 molar % titanium.
8. The substrate carrier of claim 2 , wherein the diamond-like carbon coating comprises up to about 30 molar % nitrogen.
9. The substrate carrier of claim 2 , wherein the diamond-like carbon coating comprises up to about 30 molar % fluorine.
10. A method of coating a substrate carrier, the method comprising:
positioning a substrate carrier in a processing chamber, wherein the substrate carrier comprises a retaining frame, a sub-carrier retaining surface, at least one sub-carrier retaining recess configured to laterally retain one or more sub-carriers positioned thereon; and
blanket depositing a diamond-like carbon coating over the sub-carrier retaining surface.
11. The method of claim 10 , wherein the blanket depositing comprises:
flowing into the processing chamber a carbon-containing gas selected from the group consisting of one or more alkanes, one or more alkenes, one or more alkynes, one or more aromatic hydrocarbons, or mixtures thereof; and
dissociating at least some of the chemical bonds of the carbon-containing gas.
12. The method of claim 11 , wherein the blanket depositing further comprises flowing into the processing chamber an inert gas.
13. The method of claim 11 , wherein the carbon-containing gas comprises acetylene.
14. The method of claim 11 , wherein the carbon-containing gas comprises CH4.
15. The method of claim 11 , further comprising:
flowing into the processing chamber a dopant gas comprising at least one heteroatom selected from the group consisting of B, N, Ti, W, Cr, and F; and
reacting the carbon-containing gas with the dopant gas.
16. The method of claim 12 , further comprising:
flowing into the processing chamber nitrogen or ammonia; and
reacting the carbon-containing gas with the nitrogen or ammonia,
17. The method of claim 16 , wherein the carbon-containing gas comprises acetylene.
18. The method of claim 17 , wherein the carrier comprises aluminum, graphite, carbon fiber, carbon fiber composite, or stainless steel
19. The method of claim 18 , wherein the inert gas is selected from the group consisting of argon, helium, hydrogen, and combinations thereof.
20. The method of claim 10 , further comprising:
generating reactive species in a remote plasma source from a gas mixture, wherein the gas mixture comprises:
NF3;
one or more of Ar and N2; and
one or more of N2O and O2;
introducing the reactive species into the processing chamber; and
applying an RF power to a showerhead or a backing plate of the processing chamber.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/698,395 US20150333213A1 (en) | 2014-05-19 | 2015-04-28 | Diamond-like carbon coatings for substrate carriers |
JP2015002304U JP3198796U (en) | 2014-05-19 | 2015-05-12 | Diamond-like carbon coating for substrate carriers |
TW104207625U TWM525544U (en) | 2014-05-19 | 2015-05-18 | Substrate carrier having diamond-like carbon coatings |
KR2020150003172U KR20150004261U (en) | 2014-05-19 | 2015-05-18 | Diamond-like carbon coatings for substrate carriers |
CN201520320644.9U CN204834654U (en) | 2014-05-19 | 2015-05-18 | Base plate carrier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462000376P | 2014-05-19 | 2014-05-19 | |
US14/698,395 US20150333213A1 (en) | 2014-05-19 | 2015-04-28 | Diamond-like carbon coatings for substrate carriers |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150333213A1 true US20150333213A1 (en) | 2015-11-19 |
Family
ID=54539213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/698,395 Abandoned US20150333213A1 (en) | 2014-05-19 | 2015-04-28 | Diamond-like carbon coatings for substrate carriers |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150333213A1 (en) |
KR (1) | KR20150004261U (en) |
CN (1) | CN204834654U (en) |
TW (1) | TWM525544U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11866821B2 (en) | 2019-05-22 | 2024-01-09 | Applied Materials, Inc. | Substrate support cover for high-temperature corrosive environment |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10784100B2 (en) * | 2016-07-21 | 2020-09-22 | Tokyo Electron Limited | Back-side friction reduction of a substrate |
CN109994351B (en) * | 2018-01-02 | 2021-07-13 | 台湾积体电路制造股份有限公司 | Ion implanter and method for manufacturing ion implanter chamber |
WO2021249768A1 (en) * | 2020-06-08 | 2021-12-16 | Asml Netherlands B.V. | Substrate holder for use in a lithographic apparatus and a method of manufacturing a substrate holder |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4298120A (en) * | 1978-12-26 | 1981-11-03 | Murata Manufacturing Co., Ltd. | Chip-like electronic component series and method for supplying chip-like electronic components |
US20050252454A1 (en) * | 2004-02-24 | 2005-11-17 | Applied Materials, Inc. | Contaminant reducing substrate transport and support system |
US20080230372A1 (en) * | 2007-03-22 | 2008-09-25 | Peter Cousins | Deposition system with electrically isolated pallet and anode assemblies |
US20110259270A1 (en) * | 2010-04-21 | 2011-10-27 | Ibiden Co., Ltd. | Carbon component and method for manufacturing the same |
US9534476B2 (en) * | 2013-11-26 | 2017-01-03 | Baker Hughes Incorporated | Scale-inhibiting coating |
-
2015
- 2015-04-28 US US14/698,395 patent/US20150333213A1/en not_active Abandoned
- 2015-05-18 KR KR2020150003172U patent/KR20150004261U/en not_active Application Discontinuation
- 2015-05-18 CN CN201520320644.9U patent/CN204834654U/en active Active
- 2015-05-18 TW TW104207625U patent/TWM525544U/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4298120A (en) * | 1978-12-26 | 1981-11-03 | Murata Manufacturing Co., Ltd. | Chip-like electronic component series and method for supplying chip-like electronic components |
US20050252454A1 (en) * | 2004-02-24 | 2005-11-17 | Applied Materials, Inc. | Contaminant reducing substrate transport and support system |
US20080230372A1 (en) * | 2007-03-22 | 2008-09-25 | Peter Cousins | Deposition system with electrically isolated pallet and anode assemblies |
US20110259270A1 (en) * | 2010-04-21 | 2011-10-27 | Ibiden Co., Ltd. | Carbon component and method for manufacturing the same |
US9534476B2 (en) * | 2013-11-26 | 2017-01-03 | Baker Hughes Incorporated | Scale-inhibiting coating |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11866821B2 (en) | 2019-05-22 | 2024-01-09 | Applied Materials, Inc. | Substrate support cover for high-temperature corrosive environment |
Also Published As
Publication number | Publication date |
---|---|
CN204834654U (en) | 2015-12-02 |
KR20150004261U (en) | 2015-11-27 |
TWM525544U (en) | 2016-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11257685B2 (en) | Apparatus and process for electron beam mediated plasma etch and deposition processes | |
US20090297731A1 (en) | Apparatus and method for improving production throughput in cvd chamber | |
Koizumi et al. | Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films | |
CN109023311B (en) | High selectivity and low stress carbon hard films by pulsed low frequency radio frequency power | |
US7741144B2 (en) | Plasma treatment between deposition processes | |
US5849163A (en) | Process for formation of epitaxial film | |
CN111564405B (en) | Method for processing substrate | |
US20080188062A1 (en) | Method of forming microcrystalline silicon film | |
US20150333213A1 (en) | Diamond-like carbon coatings for substrate carriers | |
KR20180005756A (en) | Electrostatic chucking for boron-doped carbon films and graded in-situ charge trapping layers to enable good particle performance | |
JPH02239623A (en) | Stabilizing layer and its manufacture | |
KR20160137746A (en) | apparatus for manufacturing a substrate and carbon protection film coating method of the same | |
CN105244255A (en) | Silicon carbide epitaxial material and production method thereof | |
EP2381483B1 (en) | Film-forming method | |
Hong et al. | Fully Bottom‐Up Waste‐Free Growth of Ultrathin Silicon Wafer via Self‐Releasing Seed Layer | |
JP3198796U (en) | Diamond-like carbon coating for substrate carriers | |
JP2021506126A (en) | Oxidation resistant protective layer in chamber adjustment | |
Rogers et al. | Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition | |
Flewitt et al. | Low-temperature deposition of hydrogenated amorphous silicon in an electron cyclotron resonance reactor for flexible displays | |
JP2021082765A (en) | Silicon carbide polycrystalline film, and manufacturing method and deposition apparatus therefor | |
Ohmi et al. | Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport | |
Sharafutdinov et al. | Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD | |
Gazuz et al. | Dry processing of silicon solar cells in a large area microwave plasma reactor | |
JP2012015229A (en) | Method of producing silicon carbide semiconductor device | |
Mauskar et al. | Highly conductive silicon films via plasma‐enhanced chemical vapor deposition at low temperatures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHENG, SHURAN;ZHANG, LIN;CHO, SU HO;SIGNING DATES FROM 20150505 TO 20150521;REEL/FRAME:036145/0528 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |