SG11202012605UA - Nano copper paste and film for sintered die attach and similar applications - Google Patents
Nano copper paste and film for sintered die attach and similar applicationsInfo
- Publication number
- SG11202012605UA SG11202012605UA SG11202012605UA SG11202012605UA SG11202012605UA SG 11202012605U A SG11202012605U A SG 11202012605UA SG 11202012605U A SG11202012605U A SG 11202012605UA SG 11202012605U A SG11202012605U A SG 11202012605UA SG 11202012605U A SG11202012605U A SG 11202012605UA
- Authority
- SG
- Singapore
- Prior art keywords
- film
- die attach
- copper paste
- similar applications
- nano copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
Classifications
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- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
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- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
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- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
- H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/83444—Gold [Au] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H—ELECTRICITY
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- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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US201862689962P | 2018-06-26 | 2018-06-26 | |
PCT/GB2019/051768 WO2020002890A1 (en) | 2018-06-26 | 2019-06-21 | Nano copper paste and film for sintered die attach and similar applications |
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SG11202012605UA true SG11202012605UA (en) | 2021-01-28 |
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SG11202012605UA SG11202012605UA (en) | 2018-06-26 | 2019-06-21 | Nano copper paste and film for sintered die attach and similar applications |
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EP (1) | EP3814035A1 (en) |
JP (2) | JP7110410B2 (en) |
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CN (1) | CN112399896B (en) |
SG (1) | SG11202012605UA (en) |
TW (1) | TWI808208B (en) |
WO (1) | WO2020002890A1 (en) |
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CN114799613B (en) * | 2021-01-28 | 2023-11-07 | 深圳先进电子材料国际创新研究院 | Copper paste and preparation method and application thereof |
KR20240031617A (en) * | 2022-09-01 | 2024-03-08 | 서울과학기술대학교 산학협력단 | Method for fabricating a sinter-bonding film and method for fabricating a power semiconductor package |
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US20040069454A1 (en) * | 1998-11-02 | 2004-04-15 | Bonsignore Patrick V. | Composition for enhancing thermal conductivity of a heat transfer medium and method of use thereof |
KR100486604B1 (en) * | 2002-10-30 | 2005-05-03 | (주)창성 | Method for manufacturing nano-scale copper powders by wet reducing process |
US20060090597A1 (en) * | 2004-10-29 | 2006-05-04 | Goia Dan V | Polyol-based method for producing ultra-fine metal powders |
JP5011225B2 (en) * | 2008-07-09 | 2012-08-29 | ニホンハンダ株式会社 | Metal member bonding agent, metal member bonded body manufacturing method, metal member bonded body, and electric circuit connecting bump manufacturing method |
JP5688895B2 (en) * | 2008-12-26 | 2015-03-25 | Dowaエレクトロニクス株式会社 | Fine silver particle powder and silver paste using the powder |
JP6028727B2 (en) * | 2011-05-18 | 2016-11-16 | 戸田工業株式会社 | Copper powder, copper paste, method for producing conductive coating film and conductive coating film |
JP6293767B2 (en) | 2012-10-29 | 2018-03-14 | アルファ・アセンブリー・ソリューションズ・インコーポレイテッドAlpha Assembly Solutions Inc. | Sintered powder |
EP2923781A4 (en) * | 2012-11-26 | 2016-07-13 | Mitsui Mining & Smelting Co | Copper powder and method for producing same |
US9190188B2 (en) * | 2013-06-13 | 2015-11-17 | E I Du Pont De Nemours And Company | Photonic sintering of polymer thick film copper conductor compositions |
TW201611198A (en) | 2014-04-11 | 2016-03-16 | 阿爾發金屬公司 | Low pressure sintering powder |
EP3134221A1 (en) * | 2014-04-23 | 2017-03-01 | Alpha Metals, Inc. | Method for manufacturing metal powder |
CN106660116A (en) * | 2014-06-23 | 2017-05-10 | 阿尔法金属公司 | Multilayered metal nano and micron particles |
US9875987B2 (en) * | 2014-10-07 | 2018-01-23 | Nxp Usa, Inc. | Electronic devices with semiconductor die attached with sintered metallic layers, and methods of formation of such devices |
JPWO2016140185A1 (en) * | 2015-03-05 | 2017-12-14 | ナミックス株式会社 | Conductive copper paste, conductive copper paste cured film, and semiconductor device |
WO2016152214A1 (en) * | 2015-03-26 | 2016-09-29 | 三井金属鉱業株式会社 | Copper powder and conductive composition containing same |
JP6151742B2 (en) * | 2015-06-09 | 2017-06-21 | タツタ電線株式会社 | Conductive paste |
TWI609059B (en) * | 2015-07-22 | 2017-12-21 | 昭榮化學工業股份有限公司 | Inorganic particle dispersion paste, adhesive resin and inorganic particle dispersion paste |
CN105336627A (en) * | 2015-10-21 | 2016-02-17 | 哈尔滨工业大学 | Method for preparing high temperature service nanocrystalline joint through pulse current low temperature rapid sintering |
JP7081064B2 (en) * | 2016-01-19 | 2022-06-07 | ナミックス株式会社 | Resin compositions, conductive copper pastes, and semiconductor devices |
CN106853537A (en) * | 2016-12-08 | 2017-06-16 | 杭州华光焊接新材料股份有限公司 | A kind of preparation method of copper nano particles interconnection material |
CN107221512B (en) * | 2017-06-20 | 2020-05-19 | 广东工业大学 | Interconnection process |
CN107214333B (en) * | 2017-06-20 | 2019-07-26 | 广东工业大学 | A kind of interconnection material and preparation method thereof |
CN107855536B (en) * | 2017-11-13 | 2020-03-31 | 哈尔滨工业大学(威海) | Method for forming high-strength reliable connection between metal and organic matter by using copper nano material |
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CN112399896A (en) | 2021-02-23 |
TW202012070A (en) | 2020-04-01 |
CN112399896B (en) | 2023-06-09 |
TWI808208B (en) | 2023-07-11 |
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