SG11202012191YA - Conductive bridge memory device, manufacturing method thereof, and switching element - Google Patents

Conductive bridge memory device, manufacturing method thereof, and switching element

Info

Publication number
SG11202012191YA
SG11202012191YA SG11202012191YA SG11202012191YA SG11202012191YA SG 11202012191Y A SG11202012191Y A SG 11202012191YA SG 11202012191Y A SG11202012191Y A SG 11202012191YA SG 11202012191Y A SG11202012191Y A SG 11202012191YA SG 11202012191Y A SG11202012191Y A SG 11202012191YA
Authority
SG
Singapore
Prior art keywords
manufacturing
memory device
switching element
conductive bridge
bridge memory
Prior art date
Application number
SG11202012191YA
Inventor
Toshiyuki Itoh
Toshiki Nokami
Kentaro Kinoshita
Shigeki Morii
Original Assignee
Nat Univ Corp Tottori Univ
Nagase & Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Corp Tottori Univ, Nagase & Co Ltd filed Critical Nat Univ Corp Tottori Univ
Publication of SG11202012191YA publication Critical patent/SG11202012191YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/54—Electrolytes
    • H01G11/58—Liquid electrolytes
    • H01G11/60—Liquid electrolytes characterised by the solvent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/54—Electrolytes
    • H01G11/58—Liquid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/035—Liquid electrolytes, e.g. impregnating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
SG11202012191YA 2018-06-12 2019-06-11 Conductive bridge memory device, manufacturing method thereof, and switching element SG11202012191YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018112008 2018-06-12
PCT/JP2019/023143 WO2019240139A1 (en) 2018-06-12 2019-06-11 Conductive-bridge memory device and production method therefor, and switch element

Publications (1)

Publication Number Publication Date
SG11202012191YA true SG11202012191YA (en) 2021-01-28

Family

ID=68842184

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202012191YA SG11202012191YA (en) 2018-06-12 2019-06-11 Conductive bridge memory device, manufacturing method thereof, and switching element

Country Status (8)

Country Link
US (1) US20210249595A1 (en)
EP (1) EP3809456A4 (en)
JP (1) JP6631986B1 (en)
KR (1) KR20210019003A (en)
CN (1) CN112219275A (en)
SG (1) SG11202012191YA (en)
TW (1) TW202002348A (en)
WO (1) WO2019240139A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11652240B1 (en) * 2019-12-03 2023-05-16 GRU Energy Lab Inc. Solid-state electrochemical cells comprising coated negative electrodes and methods of fabricating thereof
JP2022015499A (en) * 2020-07-09 2022-01-21 キオクシア株式会社 Storage device
WO2023167244A1 (en) * 2022-03-03 2023-09-07 国立研究開発法人産業技術総合研究所 Interconnection structure and information processing device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530128A (en) 1978-08-25 1980-03-03 Oku Seisakusho Co Ltd Flash discharge tube light emitting circuit
US6195155B1 (en) 1997-04-18 2001-02-27 Nikon Corporation Scanning type exposure method
DE112004000060B4 (en) * 2003-07-18 2011-01-27 Nec Corp. switching elements
EP1748866B1 (en) * 2004-04-29 2011-03-09 Zettacore, Inc. Molecular memory and processing systems and methods therefor
US20130043452A1 (en) * 2011-08-15 2013-02-21 Unity Semiconductor Corporation Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements
KR100937564B1 (en) 2005-06-20 2010-01-19 후지쯔 가부시끼가이샤 Nonvolatile semiconductor storage device and write method therefor
WO2007046145A1 (en) 2005-10-19 2007-04-26 Fujitsu Limited Method for writing into nonvolatile semiconductor memory device
US20080007995A1 (en) * 2006-07-10 2008-01-10 Schwerin Ulrike Gruening-Von Memory cell having a switching active material, and corresponding memory device
DE102007021761B4 (en) * 2007-05-09 2015-07-16 Adesto Technology Corp., Inc. Resistor switching element, memory devices, memory module, method for producing a resistive switching element and method for producing a resistive memory device
US8487291B2 (en) * 2009-01-30 2013-07-16 Seagate Technology Llc Programmable metallization memory cell with layered solid electrolyte structure
WO2011058947A1 (en) * 2009-11-11 2011-05-19 日本電気株式会社 Variable resistance element, semiconductor device, and method for forming variable resistance element
JP2014027185A (en) * 2012-07-27 2014-02-06 Toshiba Corp Nonvolatile memory
JP6195155B2 (en) 2013-08-29 2017-09-13 国立大学法人鳥取大学 Conductive bridge memory device and method of manufacturing the same
US10535466B1 (en) * 2014-11-05 2020-01-14 United States Of America As Represented By The Secretary Of The Navy Super dielectric capacitor having electrically and ionically conducting electrodes
CN106469754B (en) * 2015-08-20 2019-09-27 清华大学 A kind of track switch and the preparation method and application thereof
US11127898B2 (en) * 2016-01-22 2021-09-21 Nippon Steel Corporation Microswitch and electronic device in which same is used
TW202123502A (en) * 2019-08-30 2021-06-16 國立大學法人鳥取大學 Conductive-bridge memory device,manufacturing method thereof and switch device

Also Published As

Publication number Publication date
TW202002348A (en) 2020-01-01
KR20210019003A (en) 2021-02-19
CN112219275A (en) 2021-01-12
WO2019240139A1 (en) 2019-12-19
JP6631986B1 (en) 2020-01-15
EP3809456A4 (en) 2022-03-23
EP3809456A1 (en) 2021-04-21
JPWO2019240139A1 (en) 2020-06-25
US20210249595A1 (en) 2021-08-12

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