SG11202009404SA - Method for manufacturing a substrate for a radiofrequency device - Google Patents
Method for manufacturing a substrate for a radiofrequency deviceInfo
- Publication number
- SG11202009404SA SG11202009404SA SG11202009404SA SG11202009404SA SG11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA SG 11202009404S A SG11202009404S A SG 11202009404SA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- manufacturing
- radiofrequency device
- radiofrequency
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1852574A FR3079345B1 (en) | 2018-03-26 | 2018-03-26 | METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE |
PCT/FR2019/050685 WO2019186053A1 (en) | 2018-03-26 | 2019-03-26 | Method for manufacturing a substrate for a radiofrequency device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009404SA true SG11202009404SA (en) | 2020-10-29 |
Family
ID=62751059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009404SA SG11202009404SA (en) | 2018-03-26 | 2019-03-26 | Method for manufacturing a substrate for a radiofrequency device |
Country Status (8)
Country | Link |
---|---|
US (2) | US11870411B2 (en) |
EP (1) | EP3776632A1 (en) |
JP (1) | JP2021519537A (en) |
KR (1) | KR20200136427A (en) |
CN (1) | CN111919285B (en) |
FR (1) | FR3079345B1 (en) |
SG (1) | SG11202009404SA (en) |
WO (1) | WO2019186053A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201905013VA (en) | 2018-06-11 | 2020-01-30 | Skyworks Solutions Inc | Acoustic wave device with spinel layer |
US11876501B2 (en) | 2019-02-26 | 2024-01-16 | Skyworks Solutions, Inc. | Acoustic wave device with multi-layer substrate including ceramic |
FR3108789B1 (en) * | 2020-03-24 | 2023-12-08 | Soitec Silicon On Insulator | Method for manufacturing a piezoelectric structure for a radio frequency device and which can be used for the transfer of a piezoelectric layer, and method for transferring such a piezoelectric layer |
FR3108788A1 (en) * | 2020-03-24 | 2021-10-01 | Soitec | A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer |
FR3131436A1 (en) * | 2021-12-23 | 2023-06-30 | Soitec | METHOD FOR MAKING A DONOR SUBSTRATE |
FR3131979A1 (en) * | 2022-01-17 | 2023-07-21 | Soitec | Process for manufacturing a donor substrate for transferring a piezoelectric layer and process for transferring a piezoelectric layer onto a support substrate |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998058408A1 (en) * | 1997-06-19 | 1998-12-23 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
JP3144345B2 (en) | 1997-06-27 | 2001-03-12 | 日本電気株式会社 | Mounting method of surface acoustic wave chip |
JP2001053579A (en) * | 1999-06-02 | 2001-02-23 | Matsushita Electric Ind Co Ltd | Surface acoustic wave element and mobile object communications equipment |
EP1177623B1 (en) * | 2000-02-22 | 2009-08-05 | Nxp B.V. | Method of manufacturing a piezoeletric filter with an acoustic resonator situated on an acoustic reflector layer formed on a carrier substrate |
JP3520853B2 (en) * | 2001-01-26 | 2004-04-19 | 株式会社村田製作所 | Surface acoustic wave device and method of manufacturing the same |
CN100483666C (en) * | 2003-01-07 | 2009-04-29 | S.O.I.Tec绝缘体上硅技术公司 | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer |
US7031600B2 (en) * | 2003-04-07 | 2006-04-18 | Applied Materials, Inc. | Method and apparatus for silicon oxide deposition on large area substrates |
JP2005011393A (en) * | 2003-06-17 | 2005-01-13 | Fuji Photo Film Co Ltd | Manufacturing method of optical information medium |
US7091120B2 (en) * | 2003-08-04 | 2006-08-15 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
JP2005229455A (en) | 2004-02-16 | 2005-08-25 | Shin Etsu Chem Co Ltd | Compound piezoelectric substrate |
JP2008502151A (en) * | 2004-06-04 | 2008-01-24 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | Method and device for manufacturing and assembling printable semiconductor elements |
WO2006033822A2 (en) * | 2004-09-07 | 2006-03-30 | Massachusetts Institute Of Technology | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
FR2888663B1 (en) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | METHOD OF REDUCING THE ROUGHNESS OF A THICK LAYER OF INSULATION |
JP2007221665A (en) * | 2006-02-20 | 2007-08-30 | Toshiba Corp | Thin film piezoelectric resonator and manufacturing method thereof, and filter employing the same |
US7935568B2 (en) * | 2006-10-31 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
FR2933233B1 (en) * | 2008-06-30 | 2010-11-26 | Soitec Silicon On Insulator | GOOD RESISTANCE HIGH RESISTIVITY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
US8886334B2 (en) * | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
EP2430652B1 (en) * | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
JP5429200B2 (en) | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | Method for manufacturing composite piezoelectric substrate and piezoelectric device |
WO2012021197A2 (en) * | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
CN102624352B (en) | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | The manufacture method of composite base plate and composite base plate |
JP5796316B2 (en) * | 2011-03-22 | 2015-10-21 | 株式会社村田製作所 | Method for manufacturing piezoelectric device |
FR2973158B1 (en) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING SEMICONDUCTOR-TYPE SUBSTRATE ON INSULATION FOR RADIO FREQUENCY APPLICATIONS |
JP5783256B2 (en) * | 2011-08-26 | 2015-09-24 | 株式会社村田製作所 | Piezoelectric device and method for manufacturing piezoelectric device |
JPWO2013031651A1 (en) * | 2011-09-02 | 2015-03-23 | 株式会社村田製作所 | Elastic wave device and manufacturing method thereof |
FR2985601B1 (en) * | 2012-01-06 | 2016-06-03 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING SUBSTRATE AND SEMICONDUCTOR STRUCTURE |
JP5961863B2 (en) | 2012-04-04 | 2016-08-02 | 株式会社ユニバーサルエンターテインメント | Game machine |
WO2016205751A1 (en) * | 2015-06-19 | 2016-12-22 | QMAT, Inc. | Bond and release layer transfer process |
FR3045678B1 (en) | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER |
TW201735286A (en) * | 2016-02-11 | 2017-10-01 | 天工方案公司 | Device packaging using a recyclable carrier substrate |
JP6825822B2 (en) * | 2016-05-11 | 2021-02-03 | 京セラ株式会社 | Capacitive element, elastic wave element and elastic wave module |
FR3053532B1 (en) * | 2016-06-30 | 2018-11-16 | Soitec | HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE |
JP6621384B2 (en) * | 2016-07-20 | 2019-12-18 | 信越化学工業株式会社 | Method for manufacturing composite substrate for surface acoustic wave device |
JP6250856B1 (en) * | 2016-07-20 | 2017-12-20 | 信越化学工業株式会社 | Composite substrate for surface acoustic wave device, manufacturing method thereof, and surface acoustic wave device using the composite substrate |
-
2018
- 2018-03-26 FR FR1852574A patent/FR3079345B1/en active Active
-
2019
- 2019-03-26 EP EP19719549.8A patent/EP3776632A1/en active Pending
- 2019-03-26 WO PCT/FR2019/050685 patent/WO2019186053A1/en unknown
- 2019-03-26 CN CN201980022402.2A patent/CN111919285B/en active Active
- 2019-03-26 KR KR1020207029654A patent/KR20200136427A/en not_active Application Discontinuation
- 2019-03-26 JP JP2020551935A patent/JP2021519537A/en active Pending
- 2019-03-26 US US17/041,367 patent/US11870411B2/en active Active
- 2019-03-26 SG SG11202009404SA patent/SG11202009404SA/en unknown
-
2024
- 2024-01-04 US US18/404,685 patent/US20240146275A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20210075389A1 (en) | 2021-03-11 |
CN111919285B (en) | 2024-03-29 |
US11870411B2 (en) | 2024-01-09 |
WO2019186053A1 (en) | 2019-10-03 |
KR20200136427A (en) | 2020-12-07 |
FR3079345B1 (en) | 2020-02-21 |
US20240146275A1 (en) | 2024-05-02 |
CN111919285A (en) | 2020-11-10 |
FR3079345A1 (en) | 2019-09-27 |
JP2021519537A (en) | 2021-08-10 |
EP3776632A1 (en) | 2021-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11202009404SA (en) | Method for manufacturing a substrate for a radiofrequency device | |
GB201801337D0 (en) | Method for etching a semiconductor structure | |
IL282101B (en) | Methods for configuring a semiconductor manufacturing process. | |
PT3123975T (en) | Method for manufacturing a scanbody device | |
EP3657923A4 (en) | Method for manufacturing electronic device | |
SG10201604900TA (en) | Method for Manufacturing A High-Resistivity Semiconductor-on-Insulator Substrate | |
SG11202113246XA (en) | Method for manufacturing electronic device | |
SG11202009374YA (en) | Method for manufacturing electronic device | |
GB201817789D0 (en) | Method for configuring a matching component | |
EP3657532A4 (en) | Method for manufacturing electronic device | |
GB201800281D0 (en) | Method for forming a coating on an elctronic or electrical device | |
SG11202109903XA (en) | Method for manufacturing electronic device | |
ZA201903579B (en) | Method for manufacturing a complex-formed component | |
GB2594679B (en) | Method for manufacturing a connecting part | |
SG11202103941PA (en) | Semiconductor device manufacturing method | |
GB201604818D0 (en) | Method for forming structures upon a substrate | |
SG11202011164PA (en) | Method for manufacturing semiconductor device | |
HK1250281A1 (en) | A method for manufacturing a semiconductor device | |
PL3539792T3 (en) | Method for creating structures on a substrate | |
EP3691415A4 (en) | Method for manufacturing organic electronic device | |
SG11202109973WA (en) | Method for manufacturing electronic device | |
EP3843504A4 (en) | Method for manufacturing electronic device | |
PL3501466T3 (en) | Method for processing a substrate | |
PL3825003T3 (en) | Method for manufacturing a microfluidic device | |
EP3817034A4 (en) | Manufacturing method for semiconductor device |