SG11202004730PA - Titanium-containing film forming compositions for vapor deposition of titanium-containing films - Google Patents

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Info

Publication number
SG11202004730PA
SG11202004730PA SG11202004730PA SG11202004730PA SG11202004730PA SG 11202004730P A SG11202004730P A SG 11202004730PA SG 11202004730P A SG11202004730P A SG 11202004730PA SG 11202004730P A SG11202004730P A SG 11202004730PA SG 11202004730P A SG11202004730P A SG 11202004730PA
Authority
SG
Singapore
Prior art keywords
titanium
vapor deposition
film forming
forming compositions
films
Prior art date
Application number
SG11202004730PA
Inventor
Antonio Sanchez
Jean-Marc Girard
Grigory Nikiforov
Nicolas Blasco
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/827,783 external-priority patent/US10584039B2/en
Application filed by Air Liquide filed Critical Air Liquide
Publication of SG11202004730PA publication Critical patent/SG11202004730PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
SG11202004730PA 2017-11-30 2018-10-30 Titanium-containing film forming compositions for vapor deposition of titanium-containing films SG11202004730PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/827,783 US10584039B2 (en) 2017-11-30 2017-11-30 Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US15/968,099 US10689405B2 (en) 2017-11-30 2018-05-01 Titanium-containing film forming compositions for vapor deposition of titanium-containing films
PCT/US2018/058084 WO2019108330A1 (en) 2017-11-30 2018-10-30 Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Publications (1)

Publication Number Publication Date
SG11202004730PA true SG11202004730PA (en) 2020-06-29

Family

ID=66634900

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202004730PA SG11202004730PA (en) 2017-11-30 2018-10-30 Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Country Status (7)

Country Link
US (2) US10689405B2 (en)
JP (1) JP6920556B2 (en)
KR (1) KR102425882B1 (en)
CN (1) CN111386592B (en)
SG (1) SG11202004730PA (en)
TW (1) TWI784098B (en)
WO (1) WO2019108330A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10584039B2 (en) * 2017-11-30 2020-03-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US10689405B2 (en) * 2017-11-30 2020-06-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
KR20230003695A (en) 2021-06-29 2023-01-06 삼성전자주식회사 Method of forming a contact included in a semiconductor device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558365A (en) * 1978-10-27 1980-05-01 Hitachi Metals Ltd Coating method for titanium compound
CA2202387A1 (en) * 1994-10-11 1996-04-25 Barry C. Arkles Conformal titanium-based films and method for their preparation
AU4001395A (en) * 1994-10-11 1996-05-06 Gelest, Inc. Conformal titanium-based films and method for their preparation
US5425966A (en) * 1994-10-27 1995-06-20 Wayne State University Process for coating with single source precursors
US5656338A (en) 1994-12-13 1997-08-12 Gordon; Roy G. Liquid solution of TiBr4 in Br2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride
US5700519A (en) * 1995-01-06 1997-12-23 Sony Corporation Method for producing ultra high purity titanium films
US6444556B2 (en) * 1999-04-22 2002-09-03 Micron Technology, Inc. Chemistry for chemical vapor deposition of titanium containing films
WO2000065649A1 (en) * 1999-04-27 2000-11-02 Tokyo Electron Limited CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS
US6833058B1 (en) * 2000-10-24 2004-12-21 Honeywell International Inc. Titanium-based and zirconium-based mixed materials and sputtering targets
FI109770B (en) 2001-03-16 2002-10-15 Asm Microchemistry Oy Growing transition metal nitride thin films by using compound having hydrocarbon, amino or silyl group bound to nitrogen as nitrogen source material
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7311942B2 (en) * 2002-08-29 2007-12-25 Micron Technology, Inc. Method for binding halide-based contaminants during formation of a titanium-based film
US7208427B2 (en) 2003-08-18 2007-04-24 Advanced Technology Materials, Inc. Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
FR2871292B1 (en) 2004-06-03 2006-07-28 Air Liquide METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
WO2007000186A1 (en) 2005-06-29 2007-01-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition method of ternary films
WO2009106433A1 (en) * 2008-02-27 2009-09-03 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US9187511B2 (en) * 2012-05-01 2015-11-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules
JP2014148450A (en) * 2013-02-01 2014-08-21 Hitachi Chemical Co Ltd Method for producing rutile type titanium oxide nanorod and rutile type titanium oxide nanorod
WO2015145751A1 (en) * 2014-03-28 2015-10-01 株式会社日立国際電気 Substrate processing device, semiconductor device manufacturing method and recording medium
US9478438B2 (en) * 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
WO2017037927A1 (en) * 2015-09-03 2017-03-09 株式会社日立国際電気 Substrate processing device, recording medium, and method for manufacturing semiconductor device
US20170170114A1 (en) * 2015-12-15 2017-06-15 Lam Research Corporation Multilayer film including a tantalum and titanium alloy as a scalable barrier diffusion layer for copper interconnects
US10689405B2 (en) * 2017-11-30 2020-06-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US10584039B2 (en) * 2017-11-30 2020-03-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Also Published As

Publication number Publication date
US20200277315A1 (en) 2020-09-03
CN111386592A (en) 2020-07-07
JP2021504962A (en) 2021-02-15
US10689405B2 (en) 2020-06-23
US11168099B2 (en) 2021-11-09
TW201925515A (en) 2019-07-01
CN111386592B (en) 2024-01-05
KR20200087212A (en) 2020-07-20
US20190161507A1 (en) 2019-05-30
WO2019108330A1 (en) 2019-06-06
KR102425882B1 (en) 2022-07-27
TWI784098B (en) 2022-11-21
JP6920556B2 (en) 2021-08-18

Similar Documents

Publication Publication Date Title
IL261283A (en) Compositions and methods using same for deposition of silicon-containing film
IL273146A (en) Compositions and methods for depositing silicon-containing films
SG10201700452RA (en) High temperature atomic layer deposition of silicon-containing films
EP3400607A4 (en) Vapor disposition of silicon-containing films using penta-substituted disilanes
IL257372B (en) Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
IL260069A (en) Compositions and methods using same for deposition of silicon-containing film
SG11201703196WA (en) Compositions and methods using same for deposition of silicon-containing films
EP3535782A4 (en) Deposition and treatment of films for patterning
EP3516089A4 (en) Compositions and methods for the deposition of silicon oxide films
SG11202109796QA (en) Precursors for deposition of molybdenum-containing films
SG10201502280PA (en) Compositions and methods for the deposition of silicon oxide films
EP3310788A4 (en) Inherently selective precursors for deposition of second or third row transition metal thin films
EP3114182A4 (en) Coating composition for lubricating coating film
SG10201600832VA (en) Conformal deposition of silicon carbide films
EP3252840A4 (en) Varnish for formation of charge-transporting thin film
EP3543370A4 (en) Vapor deposition mask
GB2536768B (en) Underlayers for textured films of Heusler compounds
SG11201708916QA (en) Antifouling coating compositions, antifouling coating films, antifouling substrates, methods for producing antifouling substrates, and methods of storing antifouling coating compositions
SG11202004730PA (en) Titanium-containing film forming compositions for vapor deposition of titanium-containing films
SG11202007197YA (en) Composition for forming coating film
IL266186A (en) Process for the generation of thin silicon-containing films
SG11202108217UA (en) Deposition of metal films
EP3613406A4 (en) Composition for coating formation
IL279250A (en) Compositions and methods using same for deposition of silicon-containing film
EP3512979A4 (en) Particle coating by atomic layer depostion (ald)