SG10201600832VA - Conformal deposition of silicon carbide films - Google Patents
Conformal deposition of silicon carbide filmsInfo
- Publication number
- SG10201600832VA SG10201600832VA SG10201600832VA SG10201600832VA SG10201600832VA SG 10201600832V A SG10201600832V A SG 10201600832VA SG 10201600832V A SG10201600832V A SG 10201600832VA SG 10201600832V A SG10201600832V A SG 10201600832VA SG 10201600832V A SG10201600832V A SG 10201600832VA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon carbide
- conformal deposition
- carbide films
- films
- conformal
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US14/616,435 US10325773B2 (en) | 2012-06-12 | 2015-02-06 | Conformal deposition of silicon carbide films |
Publications (1)
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SG10201600832VA true SG10201600832VA (en) | 2016-09-29 |
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SG10201600832VA SG10201600832VA (en) | 2015-02-06 | 2016-02-03 | Conformal deposition of silicon carbide films |
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KR (2) | KR20160097149A (en) |
CN (2) | CN105862010A (en) |
SG (1) | SG10201600832VA (en) |
TW (1) | TWI693295B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10297442B2 (en) * | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
TW201822259A (en) * | 2016-09-09 | 2018-06-16 | 美商諾發系統有限公司 | Remote plasma based deposition of oxygen doped silicon carbide films |
JP2020515033A (en) * | 2016-12-16 | 2020-05-21 | エルファー エルエルシー | Method for manufacturing and etching porous silicon carbide structures |
KR102324630B1 (en) * | 2017-03-29 | 2021-11-10 | 삼성전자주식회사 | Method of manufacturing integrated circuit device |
WO2018191484A1 (en) * | 2017-04-13 | 2018-10-18 | Applied Materials, Inc. | Method and apparatus for deposition of low-k films |
US11177127B2 (en) * | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
WO2019168535A1 (en) * | 2018-03-01 | 2019-09-06 | Lam Research Corporation | Silicon-based deposition for semiconductor processing |
KR20220008393A (en) | 2018-06-01 | 2022-01-20 | (주) 디에스테크노 | Chemical vapor deposition silicon carbide bulk with enhanced etching properties |
KR102615163B1 (en) * | 2018-07-24 | 2023-12-15 | 램 리써치 코포레이션 | Remote plasma-based deposition of silicon carbide films using silicon-containing precursors and carbon-containing precursors |
WO2020072625A1 (en) * | 2018-10-03 | 2020-04-09 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
CN113195786A (en) | 2018-10-19 | 2021-07-30 | 朗姆研究公司 | Remote hydrogen plasma exposure and doped or undoped silicon carbide deposition for gap fill |
US20220195606A1 (en) * | 2020-12-23 | 2022-06-23 | Raytheon Technologies Corporation | Method for metal vapor infiltration of cmc parts and articles containing the same |
Family Cites Families (12)
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EP1077479A1 (en) * | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
TW516076B (en) * | 2000-06-13 | 2003-01-01 | Applied Materials Inc | Method and apparatus for increasing the utilization efficiency of gases during semiconductor processing |
US6365527B1 (en) * | 2000-10-06 | 2002-04-02 | United Microelectronics Corp. | Method for depositing silicon carbide in semiconductor devices |
US6798043B2 (en) * | 2001-06-28 | 2004-09-28 | Agere Systems, Inc. | Structure and method for isolating porous low-k dielectric films |
US20030085408A1 (en) | 2001-11-02 | 2003-05-08 | Neng-Hui Yang | Oxygen-doped silicon carbide etch stop layer |
US6849561B1 (en) * | 2003-08-18 | 2005-02-01 | Asm Japan K.K. | Method of forming low-k films |
US7088003B2 (en) | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
US7253123B2 (en) * | 2005-01-10 | 2007-08-07 | Applied Materials, Inc. | Method for producing gate stack sidewall spacers |
US20100081293A1 (en) * | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
KR20130135261A (en) * | 2010-11-03 | 2013-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for deposition of silicon carbide and silicon carbonitride films |
US20130217239A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
US10211310B2 (en) * | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
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2016
- 2016-02-03 SG SG10201600832VA patent/SG10201600832VA/en unknown
- 2016-02-03 TW TW105103396A patent/TWI693295B/en active
- 2016-02-04 KR KR1020160014278A patent/KR20160097149A/en not_active Application Discontinuation
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KR20160097149A (en) | 2016-08-17 |
KR102515238B1 (en) | 2023-03-30 |
TW201706439A (en) | 2017-02-16 |
KR20220024372A (en) | 2022-03-03 |
TWI693295B (en) | 2020-05-11 |
CN113846310A (en) | 2021-12-28 |
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