SG11201907860QA - Method for producing polycrystalline silicon processed article - Google Patents
Method for producing polycrystalline silicon processed articleInfo
- Publication number
- SG11201907860QA SG11201907860QA SG11201907860QA SG11201907860QA SG11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA
- Authority
- SG
- Singapore
- Prior art keywords
- polycrystalline silicon
- silicon rod
- carbon member
- processed article
- end portion
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Silicon Polymers (AREA)
Abstract
OF DISCLOSURE To provide a novel method for producing a polycrystalline silicon processed article, the method including a step for preventing carbon contamination of a polycrystalline silicon rod surface by a carbon member present on the polycrystalline silicon rod end portion when handling a polycrystalline silicon rod obtained by the Siemens method. Provided is a method for producing a polycrystalline silicon processed article, the method being characterized in that, in a method for removing a polycrystalline silicon rod obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod, there is included a step for detaching the polycrystalline silicon rod from the electrode and covering the carbon member present on the end portion of the polycrystalline silicon rod using a covering material until processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state. [FIG. 4]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017044202 | 2017-03-08 | ||
PCT/JP2018/008827 WO2018164197A1 (en) | 2017-03-08 | 2018-03-07 | Method for producing polycrystalline silicon processed article |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201907860QA true SG11201907860QA (en) | 2019-09-27 |
Family
ID=63448681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201907860QA SG11201907860QA (en) | 2017-03-08 | 2018-03-07 | Method for producing polycrystalline silicon processed article |
Country Status (8)
Country | Link |
---|---|
US (1) | US11332377B2 (en) |
EP (1) | EP3578514A4 (en) |
JP (1) | JP6998936B2 (en) |
KR (1) | KR102361373B1 (en) |
CN (1) | CN110352177B (en) |
SG (1) | SG11201907860QA (en) |
TW (1) | TWI781986B (en) |
WO (1) | WO2018164197A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6373724B2 (en) * | 2014-11-04 | 2018-08-15 | 株式会社トクヤマ | Core wire holder and silicon manufacturing method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960003734B1 (en) | 1990-06-27 | 1996-03-21 | 유니온 카바이드 코팅즈 서비스 테크놀러지 코포레이션 | Graphite chuck for starting filament in production of polycrystalline silicon and the method of protecting the same |
EP0529593B1 (en) | 1991-08-29 | 1996-02-14 | Ucar Carbon Technology Corporation | A glass carbon coated graphite chuck for use in producing polycrystalline silicon |
KR100768147B1 (en) | 2006-05-11 | 2007-10-18 | 한국화학연구원 | Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
JP5431074B2 (en) * | 2009-09-02 | 2014-03-05 | 東洋炭素株式会社 | Seed holding member and polycrystalline silicon manufacturing method using the seed holding member |
JP5751748B2 (en) * | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | Polycrystalline silicon lump group and method for producing polycrystalline silicon lump group |
CN201598183U (en) * | 2009-12-03 | 2010-10-06 | 江苏中能硅业科技发展有限公司 | Cleaning material outlet device of semi-conductor bar material |
DE102010003064A1 (en) * | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | graphite electrode |
DE102011084372A1 (en) * | 2011-10-12 | 2012-02-09 | Wacker Chemie Ag | Device for depositing polycrystalline silicon on thin rods, comprises an electrode for a power supply of thin rods, a quartz element and/or a graphite element present on the electrode and/or a mold body made of silicon |
DE102011089449A1 (en) * | 2011-12-21 | 2013-06-27 | Wacker Chemie Ag | Polycrystalline silicon rod and process for producing polysilicon |
JP5696063B2 (en) | 2012-02-02 | 2015-04-08 | 信越化学工業株式会社 | Polycrystalline silicon rod unloading jig and method for harvesting polycrystalline silicon rod |
DE102014201096A1 (en) * | 2014-01-22 | 2015-07-23 | Wacker Chemie Ag | Process for producing polycrystalline silicon |
JP6200857B2 (en) * | 2014-06-03 | 2017-09-20 | 信越化学工業株式会社 | Polycrystalline silicon rod manufacturing method, polycrystalline silicon rod, and polycrystalline silicon lump |
DE102014222883A1 (en) * | 2014-11-10 | 2016-05-12 | Wacker Chemie Ag | Polycrystalline silicon rod pair and method for producing polycrystalline silicon |
-
2018
- 2018-03-07 EP EP18763924.0A patent/EP3578514A4/en active Pending
- 2018-03-07 KR KR1020197024686A patent/KR102361373B1/en active IP Right Grant
- 2018-03-07 JP JP2019504647A patent/JP6998936B2/en active Active
- 2018-03-07 WO PCT/JP2018/008827 patent/WO2018164197A1/en unknown
- 2018-03-07 US US16/488,960 patent/US11332377B2/en active Active
- 2018-03-07 SG SG11201907860QA patent/SG11201907860QA/en unknown
- 2018-03-07 CN CN201880013910.XA patent/CN110352177B/en active Active
- 2018-03-08 TW TW107107895A patent/TWI781986B/en active
Also Published As
Publication number | Publication date |
---|---|
KR102361373B1 (en) | 2022-02-10 |
US11332377B2 (en) | 2022-05-17 |
WO2018164197A1 (en) | 2018-09-13 |
US20200010327A1 (en) | 2020-01-09 |
TWI781986B (en) | 2022-11-01 |
EP3578514A4 (en) | 2020-10-07 |
TW201836979A (en) | 2018-10-16 |
CN110352177A (en) | 2019-10-18 |
CN110352177B (en) | 2023-08-01 |
JP6998936B2 (en) | 2022-01-18 |
KR20190120758A (en) | 2019-10-24 |
JPWO2018164197A1 (en) | 2020-01-23 |
EP3578514A1 (en) | 2019-12-11 |
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