SG11201907860QA - Method for producing polycrystalline silicon processed article - Google Patents

Method for producing polycrystalline silicon processed article

Info

Publication number
SG11201907860QA
SG11201907860QA SG11201907860QA SG11201907860QA SG11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
silicon rod
carbon member
processed article
end portion
Prior art date
Application number
SG11201907860QA
Inventor
Ayao Akiyoshi
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201907860QA publication Critical patent/SG11201907860QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)

Abstract

OF DISCLOSURE To provide a novel method for producing a polycrystalline silicon processed article, the method including a step for preventing carbon contamination of a polycrystalline silicon rod surface by a carbon member present on the polycrystalline silicon rod end portion when handling a polycrystalline silicon rod obtained by the Siemens method. Provided is a method for producing a polycrystalline silicon processed article, the method being characterized in that, in a method for removing a polycrystalline silicon rod obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod, there is included a step for detaching the polycrystalline silicon rod from the electrode and covering the carbon member present on the end portion of the polycrystalline silicon rod using a covering material until processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state. [FIG. 4]
SG11201907860QA 2017-03-08 2018-03-07 Method for producing polycrystalline silicon processed article SG11201907860QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017044202 2017-03-08
PCT/JP2018/008827 WO2018164197A1 (en) 2017-03-08 2018-03-07 Method for producing polycrystalline silicon processed article

Publications (1)

Publication Number Publication Date
SG11201907860QA true SG11201907860QA (en) 2019-09-27

Family

ID=63448681

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907860QA SG11201907860QA (en) 2017-03-08 2018-03-07 Method for producing polycrystalline silicon processed article

Country Status (8)

Country Link
US (1) US11332377B2 (en)
EP (1) EP3578514A4 (en)
JP (1) JP6998936B2 (en)
KR (1) KR102361373B1 (en)
CN (1) CN110352177B (en)
SG (1) SG11201907860QA (en)
TW (1) TWI781986B (en)
WO (1) WO2018164197A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6373724B2 (en) * 2014-11-04 2018-08-15 株式会社トクヤマ Core wire holder and silicon manufacturing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003734B1 (en) 1990-06-27 1996-03-21 유니온 카바이드 코팅즈 서비스 테크놀러지 코포레이션 Graphite chuck for starting filament in production of polycrystalline silicon and the method of protecting the same
EP0529593B1 (en) 1991-08-29 1996-02-14 Ucar Carbon Technology Corporation A glass carbon coated graphite chuck for use in producing polycrystalline silicon
KR100768147B1 (en) 2006-05-11 2007-10-18 한국화학연구원 Apparatus and methods for preparation of high-purity silicon rods using mixed core means
JP5431074B2 (en) * 2009-09-02 2014-03-05 東洋炭素株式会社 Seed holding member and polycrystalline silicon manufacturing method using the seed holding member
JP5751748B2 (en) * 2009-09-16 2015-07-22 信越化学工業株式会社 Polycrystalline silicon lump group and method for producing polycrystalline silicon lump group
CN201598183U (en) * 2009-12-03 2010-10-06 江苏中能硅业科技发展有限公司 Cleaning material outlet device of semi-conductor bar material
DE102010003064A1 (en) * 2010-03-19 2011-09-22 Wacker Chemie Ag graphite electrode
DE102011084372A1 (en) * 2011-10-12 2012-02-09 Wacker Chemie Ag Device for depositing polycrystalline silicon on thin rods, comprises an electrode for a power supply of thin rods, a quartz element and/or a graphite element present on the electrode and/or a mold body made of silicon
DE102011089449A1 (en) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polycrystalline silicon rod and process for producing polysilicon
JP5696063B2 (en) 2012-02-02 2015-04-08 信越化学工業株式会社 Polycrystalline silicon rod unloading jig and method for harvesting polycrystalline silicon rod
DE102014201096A1 (en) * 2014-01-22 2015-07-23 Wacker Chemie Ag Process for producing polycrystalline silicon
JP6200857B2 (en) * 2014-06-03 2017-09-20 信越化学工業株式会社 Polycrystalline silicon rod manufacturing method, polycrystalline silicon rod, and polycrystalline silicon lump
DE102014222883A1 (en) * 2014-11-10 2016-05-12 Wacker Chemie Ag Polycrystalline silicon rod pair and method for producing polycrystalline silicon

Also Published As

Publication number Publication date
KR102361373B1 (en) 2022-02-10
US11332377B2 (en) 2022-05-17
WO2018164197A1 (en) 2018-09-13
US20200010327A1 (en) 2020-01-09
TWI781986B (en) 2022-11-01
EP3578514A4 (en) 2020-10-07
TW201836979A (en) 2018-10-16
CN110352177A (en) 2019-10-18
CN110352177B (en) 2023-08-01
JP6998936B2 (en) 2022-01-18
KR20190120758A (en) 2019-10-24
JPWO2018164197A1 (en) 2020-01-23
EP3578514A1 (en) 2019-12-11

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