SG11201907482YA - Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method - Google Patents

Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

Info

Publication number
SG11201907482YA
SG11201907482YA SG11201907482YA SG11201907482YA SG11201907482YA SG 11201907482Y A SG11201907482Y A SG 11201907482YA SG 11201907482Y A SG11201907482Y A SG 11201907482YA SG 11201907482Y A SG11201907482Y A SG 11201907482YA SG 11201907482Y A SG11201907482Y A SG 11201907482YA
Authority
SG
Singapore
Prior art keywords
pellicle
exposure
original plate
semiconductor device
manufacturing
Prior art date
Application number
SG11201907482YA
Inventor
Kazuo Kohmura
Yosuke Ono
Atsushi Okubo
Daiki Taneichi
Hisako Ishikawa
Tsuneaki BIYAJIMA
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of SG11201907482YA publication Critical patent/SG11201907482YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PELLICLE, EXPOSURE ORIGINAL PLATE, EXPOSURE DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 5 A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle (100) includes a pellicle film (101); a support frame (103); and a first adhesive layer (109) provided at an end of the support frame, the end being opposite to an end on which the pellicle film is 10 extended. The pellicle further includes an inorganic layer (111) on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient ( µm) in the range of 5 × 10 3 cm 2/g to 2 × 10 5 cm 2/g. 15 Figure 1B
SG11201907482YA 2017-02-17 2018-02-09 Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method SG11201907482YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017027742 2017-02-17
PCT/JP2018/004726 WO2018151056A1 (en) 2017-02-17 2018-02-09 Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
SG11201907482YA true SG11201907482YA (en) 2019-09-27

Family

ID=63169801

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907482YA SG11201907482YA (en) 2017-02-17 2018-02-09 Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

Country Status (8)

Country Link
US (1) US11137677B2 (en)
EP (1) EP3584636A4 (en)
JP (1) JP6816170B2 (en)
KR (1) KR102237878B1 (en)
CN (1) CN110325908A (en)
SG (1) SG11201907482YA (en)
TW (1) TWI761451B (en)
WO (1) WO2018151056A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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WO2019172141A1 (en) * 2018-03-05 2019-09-12 三井化学株式会社 Pellicle, exposure master, exposure device and method for manufacturing semiconductor device
JP7040427B2 (en) * 2018-12-03 2022-03-23 信越化学工業株式会社 Pellicle, exposure original plate with pellicle, exposure method and semiconductor manufacturing method
JP7361622B2 (en) * 2019-03-05 2023-10-16 Hoya株式会社 Photomask repair method, photomask repair device, method for manufacturing a photomask with pellicle, and method for manufacturing a display device
CN112445063A (en) * 2019-08-28 2021-03-05 芯恩（青岛）集成电路有限公司 Protective film frame, preparation method thereof and protective film assembly
US20230244138A1 (en) 2020-08-06 2023-08-03 Mitsui Chemicals, Inc. Pellicle, exposure original plate, exposure device, method of manufacturing pellicle, and method of manufacturing semiconductor device
KR102624936B1 (en) * 2021-05-21 2024-01-15 주식회사 에프에스티 Pellicle Frame for EUV(extreme ultraviolet) Lithography and Sealing Material for Pellicle Frame for EUV(extreme ultraviolet) Lithography
KR20240038816A (en) * 2021-09-13 2024-03-25 미쯔이가가꾸가부시끼가이샤 Pellicle, exposed plate, exposure device and method of manufacturing pellicle
WO2023181869A1 (en) * 2022-03-22 2023-09-28 三井化学株式会社 Pellicle frame, pellicle, original plate for exposure, exposure device, and pellicle production method
WO2024056548A1 (en) * 2022-09-12 2024-03-21 Asml Netherlands B.V. Pellicle and methods for forming pellicle for use in a lithographic apparatus

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JPH04299820A (en) * 1991-03-28 1992-10-23 Canon Inc X-ray mask structure
JP2550281Y2 (en) * 1991-11-26 1997-10-08 凸版印刷株式会社 Pellicle frame
US5365330A (en) 1991-11-27 1994-11-15 Nikon Corporation Foreign particle inspection apparatus
JPH05150443A (en) * 1991-11-27 1993-06-18 Nikon Corp Foreign matter inspecting device
JPH05323585A (en) * 1992-05-15 1993-12-07 Hitachi Ltd Projection type transcription mask
JPH05323586A (en) * 1992-05-15 1993-12-07 Hitachi Ltd Antireflection pellicle for wall surface of pellicle frame
JPH0619124A (en) * 1992-07-01 1994-01-28 Seiko Epson Corp Production of pellicle frame and semiconductor device
JP4458315B2 (en) * 2000-06-02 2010-04-28 旭化成イーマテリアルズ株式会社 Pellicle
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Also Published As

Publication number Publication date
WO2018151056A1 (en) 2018-08-23
KR20190102273A (en) 2019-09-03
CN110325908A (en) 2019-10-11
KR102237878B1 (en) 2021-04-07
JPWO2018151056A1 (en) 2019-12-12
US20200064729A1 (en) 2020-02-27
TWI761451B (en) 2022-04-21
EP3584636A4 (en) 2020-12-30
EP3584636A1 (en) 2019-12-25
JP6816170B2 (en) 2021-01-20
TW201836121A (en) 2018-10-01
US11137677B2 (en) 2021-10-05

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