SG11201806942XA - Composition for forming fine pattern and method for forming fine pattern using the same - Google Patents

Composition for forming fine pattern and method for forming fine pattern using the same

Info

Publication number
SG11201806942XA
SG11201806942XA SG11201806942XA SG11201806942XA SG11201806942XA SG 11201806942X A SG11201806942X A SG 11201806942XA SG 11201806942X A SG11201806942X A SG 11201806942XA SG 11201806942X A SG11201806942X A SG 11201806942XA SG 11201806942X A SG11201806942X A SG 11201806942XA
Authority
SG
Singapore
Prior art keywords
international
fine pattern
forming
composition
pattern
Prior art date
Application number
SG11201806942XA
Inventor
Yoshihiro Miyamoto
Tomohide Katayama
Takayuki SAO
Original Assignee
Az Electronic Mat Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat Luxembourg Sarl filed Critical Az Electronic Mat Luxembourg Sarl
Publication of SG11201806942XA publication Critical patent/SG11201806942XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C08F226/10—N-Vinyl-pyrrolidone
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
    • C08L29/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Medicinal Preparation (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization M11111011101010111110101111 101E3 100 111100110111111101111011# 11 International Bureau .. .... ..Yejd (10) International Publication Number ..... .....!;,,, (43) International Publication Date WO 2017/157506 Al 21 September 2017 (21.09.2017) WIP0 I PCT (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every G03F 7/40 (2006.01) GO3F 7/031 (2006.01) kind of national protection available): AE, AG, AL, AM, G03F 7/004 (2006.01) G03F 7/033 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (21) International Application Number: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/EP2017/000267 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (22) International Filing Date: KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, 27 February 2017 (27.02.2017) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (25) Filing Language: English RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (26) Publication Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 2016-051545 15 March 2016 (15.03.2016) JP (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) (72) Applicant: AZ ELECTRONIC MATERIALS (LUX- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, EMBOURG) S.A R.L. [LU/LU]; 46 Place Guillaume II, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, 1648 Luxembourg (LU). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, Inventors: MIYAMOTO, Yoshihiro; c/o Merck Perform- LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, ance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). KATAYAMA, Tomohide; c/o SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Merck Performance Materials Ltd., 3330, Chihama, GW, KM, ML, MR, NE, SN, TD, TG). Kakegawa-shi, Shizuoka 437-1412 (JP). SAO, Takayuki; Published: c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). with international search report (Art. 21(3)) Agent: B2B PATENTS; Merck Patent GmbH, 64271 (74) Darmstadt (DE). Il © ir) IN ir) 11 (54) Title: COMPOSITION FOR FORMING FINE PATTERN AND METHOD FOR FORMING FINE PATTERN USING THE Il SAME 0 N (57) : [Problem] To provide a composition for forming a fme pattern having a good pattern shape even after being applied en. ) to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same. ,7 1 1 . 9 [Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fme pattern using the same.
SG11201806942XA 2016-03-15 2017-02-27 Composition for forming fine pattern and method for forming fine pattern using the same SG11201806942XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016051545A JP2017165846A (en) 2016-03-15 2016-03-15 Fine pattern forming composition and fine pattern forming method using the same
PCT/EP2017/000267 WO2017157506A1 (en) 2016-03-15 2017-02-27 Composition for forming fine pattern and method for forming fine pattern using the same

Publications (1)

Publication Number Publication Date
SG11201806942XA true SG11201806942XA (en) 2018-09-27

Family

ID=58358536

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806942XA SG11201806942XA (en) 2016-03-15 2017-02-27 Composition for forming fine pattern and method for forming fine pattern using the same

Country Status (8)

Country Link
US (1) US10859916B2 (en)
EP (1) EP3430476B1 (en)
JP (2) JP2017165846A (en)
KR (1) KR102253729B1 (en)
CN (1) CN108780284B (en)
SG (1) SG11201806942XA (en)
TW (1) TWI748998B (en)
WO (1) WO2017157506A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6915460B2 (en) 2017-08-30 2021-08-04 株式会社デンソー Air conditioning unit
JP2022096214A (en) 2020-12-17 2022-06-29 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate
TW202403464A (en) * 2022-06-08 2024-01-16 日商東京威力科創股份有限公司 Substrate processing method, storage medium, and substrate processing device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3931467A1 (en) 1989-09-21 1991-04-04 Hoechst Ag POLYMERIZABLE MIXTURE BY RADIATION AND METHOD FOR PRODUCING A SOLDER STOP MASK
JP4485241B2 (en) 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 Water-soluble resin composition and pattern forming method using the same
JP4428642B2 (en) 2004-04-30 2010-03-10 東京応化工業株式会社 COATING FORMING AGENT FOR PATTERN REFINEMENT AND METHOD FOR FORMING FINE PATTERN USING THE
JP4821776B2 (en) * 2005-11-21 2011-11-24 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP5069494B2 (en) 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same
JP5171422B2 (en) * 2008-06-19 2013-03-27 ルネサスエレクトロニクス株式会社 Photosensitive composition, pattern forming method using the same, and method for producing semiconductor element
JP5623896B2 (en) 2010-01-15 2014-11-12 富士フイルム株式会社 Photosensitive resin composition, method for forming cured film, cured film, organic EL display device, and liquid crystal display device
JP5884521B2 (en) * 2011-02-09 2016-03-15 信越化学工業株式会社 Pattern formation method
WO2012148533A1 (en) 2011-04-28 2012-11-01 Isp Investments Inc. Lactamic polymers containing an acetoacetate moiety
JP5758263B2 (en) * 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Composition for forming fine resist pattern and pattern forming method using the same
JP6309802B2 (en) 2014-03-26 2018-04-11 東京応化工業株式会社 Coating for pattern refinement
US10216090B2 (en) 2015-03-31 2019-02-26 Jsr Corporation Pattern-forming method and composition for resist pattern-refinement
JP6679998B2 (en) 2015-03-31 2020-04-15 Jsr株式会社 Pattern formation method

Also Published As

Publication number Publication date
US20190079398A1 (en) 2019-03-14
CN108780284A (en) 2018-11-09
WO2017157506A1 (en) 2017-09-21
KR20180124078A (en) 2018-11-20
JP2017165846A (en) 2017-09-21
TW201800465A (en) 2018-01-01
JP2019514037A (en) 2019-05-30
JP6790107B2 (en) 2020-11-25
KR102253729B1 (en) 2021-05-24
EP3430476A1 (en) 2019-01-23
TWI748998B (en) 2021-12-11
CN108780284B (en) 2022-04-12
EP3430476B1 (en) 2020-04-01
US10859916B2 (en) 2020-12-08

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