SG11201802505WA - Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR - Google Patents
Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFORInfo
- Publication number
- SG11201802505WA SG11201802505WA SG11201802505WA SG11201802505WA SG11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA
- Authority
- SG
- Singapore
- Prior art keywords
- production method
- sputtering target
- method therefor
- alloy sputtering
- alloy
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016062544 | 2016-03-25 | ||
PCT/JP2017/011695 WO2017164301A1 (ja) | 2016-03-25 | 2017-03-23 | Ti-Ta合金スパッタリングターゲット及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201802505WA true SG11201802505WA (en) | 2018-04-27 |
Family
ID=59900321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201802505WA SG11201802505WA (en) | 2016-03-25 | 2017-03-23 | Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180305805A1 (ko) |
EP (1) | EP3339469A4 (ko) |
JP (1) | JP6356357B2 (ko) |
KR (1) | KR20180055907A (ko) |
CN (1) | CN108291295B (ko) |
SG (1) | SG11201802505WA (ko) |
TW (1) | TWI721138B (ko) |
WO (1) | WO2017164301A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109943820A (zh) * | 2019-04-12 | 2019-06-28 | 大连理工大学 | 一种应用于探头表面高温导电耐蚀Ti-Ta合金薄膜材料及其制备方法 |
US11993464B2 (en) * | 2019-06-03 | 2024-05-28 | Jx Metals Corporation | Raw material discharge device, method of processing of electronic/electrical device component scrap, and method of raw material discharge for electronic/electrical device component scrap |
CN113684456B (zh) * | 2021-08-25 | 2023-03-31 | 湖南稀土金属材料研究院有限责任公司 | La-Ti合金靶及其制备方法 |
CN114029484B (zh) * | 2021-11-08 | 2023-09-12 | 宁波江丰电子材料股份有限公司 | 一种钽钛合金靶材的制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204057A (en) * | 1989-07-14 | 1993-04-20 | Kabushiki Kaisha Toshiba | Highly purified titanium material and its named article, a sputtering target |
JPH07103432B2 (ja) * | 1989-07-14 | 1995-11-08 | 株式会社東芝 | 半導体素子形成用高純度チタン材、高純度チタン材の製造方法、それを用いたスパッタターゲットおよび高純度チタン膜 |
JP3031474B2 (ja) * | 1989-12-26 | 2000-04-10 | 株式会社東芝 | 高純度タンタル材,タンタルターゲット,薄膜および半導体装置の製造方法 |
JP2000355760A (ja) * | 1999-06-14 | 2000-12-26 | Toshiba Corp | スパッタターゲット、バリア膜および電子部品 |
RU2161207C1 (ru) * | 2000-04-06 | 2000-12-27 | Федеральное государственное унитарное предприятие Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" | Способ получения ниобия высокой чистоты |
KR20030020986A (ko) * | 2000-08-15 | 2003-03-10 | 허니웰 인터내셔널 인코포레이티드 | 스퍼터링 타겟 |
US6833058B1 (en) * | 2000-10-24 | 2004-12-21 | Honeywell International Inc. | Titanium-based and zirconium-based mixed materials and sputtering targets |
JP4033286B2 (ja) * | 2001-03-19 | 2008-01-16 | 日本板硝子株式会社 | 高屈折率誘電体膜とその製造方法 |
US7067197B2 (en) * | 2003-01-07 | 2006-06-27 | Cabot Corporation | Powder metallurgy sputtering targets and methods of producing same |
CA2607091C (en) * | 2005-05-05 | 2014-08-12 | H.C. Starck Gmbh | Coating process for manufacture or reprocessing of sputter targets and x-ray anodes |
JP4912825B2 (ja) * | 2005-10-14 | 2012-04-11 | 新日本製鐵株式会社 | 低接触抵抗性の固体高分子型燃料電池セパレーター用チタン合金材およびその製造方法ならびに本チタン合金材を用いてなる固体高分子型燃料電池セパレーター |
JP2010123586A (ja) * | 2008-11-17 | 2010-06-03 | Nec Electronics Corp | 半導体装置、半導体装置の製造方法 |
JP5701879B2 (ja) * | 2010-07-16 | 2015-04-15 | Jx日鉱日石金属株式会社 | タンタル基焼結体スパッタリングターゲットの製造方法 |
JP5442868B2 (ja) * | 2010-07-30 | 2014-03-12 | Jx日鉱日石金属株式会社 | スパッタリングターゲット及び/又はコイル並びにこれらの製造方法 |
-
2017
- 2017-03-23 US US15/771,114 patent/US20180305805A1/en not_active Abandoned
- 2017-03-23 WO PCT/JP2017/011695 patent/WO2017164301A1/ja active Application Filing
- 2017-03-23 JP JP2017540802A patent/JP6356357B2/ja active Active
- 2017-03-23 KR KR1020187013141A patent/KR20180055907A/ko not_active IP Right Cessation
- 2017-03-23 CN CN201780003924.9A patent/CN108291295B/zh active Active
- 2017-03-23 EP EP17770341.0A patent/EP3339469A4/en not_active Withdrawn
- 2017-03-23 SG SG11201802505WA patent/SG11201802505WA/en unknown
- 2017-03-24 TW TW106109927A patent/TWI721138B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2017164301A1 (ja) | 2018-04-05 |
JP6356357B2 (ja) | 2018-07-11 |
TWI721138B (zh) | 2021-03-11 |
EP3339469A4 (en) | 2019-03-27 |
EP3339469A1 (en) | 2018-06-27 |
US20180305805A1 (en) | 2018-10-25 |
CN108291295A (zh) | 2018-07-17 |
CN108291295B (zh) | 2021-03-16 |
KR20180055907A (ko) | 2018-05-25 |
TW201805460A (zh) | 2018-02-16 |
WO2017164301A1 (ja) | 2017-09-28 |
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