SG11201802505WA - Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR - Google Patents

Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

Info

Publication number
SG11201802505WA
SG11201802505WA SG11201802505WA SG11201802505WA SG11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA SG 11201802505W A SG11201802505W A SG 11201802505WA
Authority
SG
Singapore
Prior art keywords
production method
sputtering target
method therefor
alloy sputtering
alloy
Prior art date
Application number
SG11201802505WA
Other languages
English (en)
Inventor
Kunihiro Oda
Chisaka Miyata
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201802505WA publication Critical patent/SG11201802505WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D7/00—Casting ingots, e.g. from ferrous metals
    • B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
SG11201802505WA 2016-03-25 2017-03-23 Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR SG11201802505WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016062544 2016-03-25
PCT/JP2017/011695 WO2017164301A1 (ja) 2016-03-25 2017-03-23 Ｔｉ－Ｔａ合金スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201802505WA true SG11201802505WA (en) 2018-04-27

Family

ID=59900321

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201802505WA SG11201802505WA (en) 2016-03-25 2017-03-23 Ti-Ta ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

Country Status (8)

Country Link
US (1) US20180305805A1 (ko)
EP (1) EP3339469A4 (ko)
JP (1) JP6356357B2 (ko)
KR (1) KR20180055907A (ko)
CN (1) CN108291295B (ko)
SG (1) SG11201802505WA (ko)
TW (1) TWI721138B (ko)
WO (1) WO2017164301A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109943820A (zh) * 2019-04-12 2019-06-28 大连理工大学 一种应用于探头表面高温导电耐蚀Ti-Ta合金薄膜材料及其制备方法
US11993464B2 (en) * 2019-06-03 2024-05-28 Jx Metals Corporation Raw material discharge device, method of processing of electronic/electrical device component scrap, and method of raw material discharge for electronic/electrical device component scrap
CN113684456B (zh) * 2021-08-25 2023-03-31 湖南稀土金属材料研究院有限责任公司 La-Ti合金靶及其制备方法
CN114029484B (zh) * 2021-11-08 2023-09-12 宁波江丰电子材料股份有限公司 一种钽钛合金靶材的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204057A (en) * 1989-07-14 1993-04-20 Kabushiki Kaisha Toshiba Highly purified titanium material and its named article, a sputtering target
JPH07103432B2 (ja) * 1989-07-14 1995-11-08 株式会社東芝 半導体素子形成用高純度チタン材、高純度チタン材の製造方法、それを用いたスパッタターゲットおよび高純度チタン膜
JP3031474B2 (ja) * 1989-12-26 2000-04-10 株式会社東芝 高純度タンタル材，タンタルターゲット，薄膜および半導体装置の製造方法
JP2000355760A (ja) * 1999-06-14 2000-12-26 Toshiba Corp スパッタターゲット、バリア膜および電子部品
RU2161207C1 (ru) * 2000-04-06 2000-12-27 Федеральное государственное унитарное предприятие Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения ниобия высокой чистоты
KR20030020986A (ko) * 2000-08-15 2003-03-10 허니웰 인터내셔널 인코포레이티드 스퍼터링 타겟
US6833058B1 (en) * 2000-10-24 2004-12-21 Honeywell International Inc. Titanium-based and zirconium-based mixed materials and sputtering targets
JP4033286B2 (ja) * 2001-03-19 2008-01-16 日本板硝子株式会社 高屈折率誘電体膜とその製造方法
US7067197B2 (en) * 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
CA2607091C (en) * 2005-05-05 2014-08-12 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
JP4912825B2 (ja) * 2005-10-14 2012-04-11 新日本製鐵株式会社 低接触抵抗性の固体高分子型燃料電池セパレーター用チタン合金材およびその製造方法ならびに本チタン合金材を用いてなる固体高分子型燃料電池セパレーター
JP2010123586A (ja) * 2008-11-17 2010-06-03 Nec Electronics Corp 半導体装置、半導体装置の製造方法
JP5701879B2 (ja) * 2010-07-16 2015-04-15 Jx日鉱日石金属株式会社 タンタル基焼結体スパッタリングターゲットの製造方法
JP5442868B2 (ja) * 2010-07-30 2014-03-12 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び／又はコイル並びにこれらの製造方法

Also Published As

Publication number Publication date
JPWO2017164301A1 (ja) 2018-04-05
JP6356357B2 (ja) 2018-07-11
TWI721138B (zh) 2021-03-11
EP3339469A4 (en) 2019-03-27
EP3339469A1 (en) 2018-06-27
US20180305805A1 (en) 2018-10-25
CN108291295A (zh) 2018-07-17
CN108291295B (zh) 2021-03-16
KR20180055907A (ko) 2018-05-25
TW201805460A (zh) 2018-02-16
WO2017164301A1 (ja) 2017-09-28

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