SG11201704463VA - Tantalum sputtering target, and production method therefor - Google Patents

Tantalum sputtering target, and production method therefor

Info

Publication number
SG11201704463VA
SG11201704463VA SG11201704463VA SG11201704463VA SG11201704463VA SG 11201704463V A SG11201704463V A SG 11201704463VA SG 11201704463V A SG11201704463V A SG 11201704463VA SG 11201704463V A SG11201704463V A SG 11201704463VA SG 11201704463V A SG11201704463V A SG 11201704463VA
Authority
SG
Singapore
Prior art keywords
production method
sputtering target
method therefor
tantalum sputtering
tantalum
Prior art date
Application number
SG11201704463VA
Other languages
English (en)
Inventor
Kotaro Nagatsu
Shinichiro Senda
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201704463VA publication Critical patent/SG11201704463VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D7/00—Casting ingots, e.g. from ferrous metals
    • B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201704463VA 2015-05-22 2016-05-17 Tantalum sputtering target, and production method therefor SG11201704463VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015104294 2015-05-22
PCT/JP2016/064538 WO2016190160A1 (ja) 2015-05-22 2016-05-17 タンタルスパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201704463VA true SG11201704463VA (en) 2017-07-28

Family

ID=57392765

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704463VA SG11201704463VA (en) 2015-05-22 2016-05-17 Tantalum sputtering target, and production method therefor

Country Status (9)

Country Link
US (1) US10658163B2 (ja)
EP (1) EP3211118B1 (ja)
JP (1) JP6293929B2 (ja)
KR (1) KR20170091738A (ja)
CN (1) CN107109634B (ja)
IL (1) IL252717B (ja)
SG (1) SG11201704463VA (ja)
TW (1) TWI707046B (ja)
WO (1) WO2016190160A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6293928B2 (ja) 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
TW201738395A (zh) * 2015-11-06 2017-11-01 塔沙Ｓｍｄ公司 具有提高的沉積速率的製備鉭濺鍍靶材的方法
SG11201810892XA (en) * 2017-03-30 2019-01-30 Jx Nippon Mining & Metals Corp Tantalum sputtering target
CN114892136A (zh) * 2022-05-25 2022-08-12 同创(丽水)特种材料有限公司 一种钽靶材及其制备方法与应用

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JPH1180942A (ja) 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
JP2001295035A (ja) 2000-04-11 2001-10-26 Toshiba Corp スパッタリングターゲットおよびその製造方法
KR100966682B1 (ko) * 2001-02-20 2010-06-29 에이치. 씨. 스타아크 아이앤씨 균일한 조직을 갖는 내화성 금속판 및 이 금속판의 제작방법
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JP4883546B2 (ja) 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
JP4263900B2 (ja) 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
CN103966561A (zh) 2003-04-01 2014-08-06 Jx日矿日石金属株式会社 钽溅射靶及其制造方法
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KR100968395B1 (ko) 2005-04-28 2010-07-07 닛코 킨조쿠 가부시키가이샤 스퍼터링 타겟
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JP5714506B2 (ja) 2009-11-17 2015-05-07 株式会社東芝 タンタルスパッタリングターゲットおよびタンタルスパッタリングターゲットの製造方法ならびに半導体素子の製造方法
KR20130037215A (ko) 2010-08-09 2013-04-15 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃
KR20130008089A (ko) 2010-08-09 2013-01-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃
WO2013080801A1 (ja) * 2011-11-30 2013-06-06 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
JP5324016B1 (ja) 2012-03-21 2013-10-23 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法並びに同ターゲットを用いて形成した半導体配線用バリア膜
SG11201501370PA (en) 2012-12-19 2015-04-29 Jx Nippon Mining & Metals Corp Tantalum sputtering target and method for producing same
WO2014097897A1 (ja) 2012-12-19 2014-06-26 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
US9859104B2 (en) 2013-03-04 2018-01-02 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and production method therefor
CN105593399B (zh) 2013-10-01 2018-05-25 吉坤日矿日石金属株式会社 钽溅射靶
US20160208377A1 (en) 2014-03-27 2016-07-21 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same
JP6293928B2 (ja) 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
WO2016190160A1 (ja) 2016-12-01
KR20170091738A (ko) 2017-08-09
US10658163B2 (en) 2020-05-19
EP3211118A4 (en) 2018-04-18
TW201708556A (zh) 2017-03-01
EP3211118A1 (en) 2017-08-30
JPWO2016190160A1 (ja) 2017-07-06
CN107109634B (zh) 2020-08-28
JP6293929B2 (ja) 2018-03-14
IL252717B (en) 2019-07-31
IL252717A0 (en) 2017-08-31
EP3211118B1 (en) 2020-09-09
TWI707046B (zh) 2020-10-11
US20170372879A1 (en) 2017-12-28
CN107109634A (zh) 2017-08-29

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