SG11201701159QA - Atomic layer etching device and atomic layer etching method using same - Google Patents

Atomic layer etching device and atomic layer etching method using same

Info

Publication number
SG11201701159QA
SG11201701159QA SG11201701159QA SG11201701159QA SG11201701159QA SG 11201701159Q A SG11201701159Q A SG 11201701159QA SG 11201701159Q A SG11201701159Q A SG 11201701159QA SG 11201701159Q A SG11201701159Q A SG 11201701159QA SG 11201701159Q A SG11201701159Q A SG 11201701159QA
Authority
SG
Singapore
Prior art keywords
atomic layer
layer etching
same
etching method
etching device
Prior art date
Application number
SG11201701159QA
Inventor
Wei Luo
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201701159QA publication Critical patent/SG11201701159QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
SG11201701159QA 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same SG11201701159QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410433208.2A CN105448635B (en) 2014-08-28 2014-08-28 Atomic layer etching device and use its atomic layer lithographic method
PCT/CN2015/087512 WO2016029817A1 (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same

Publications (1)

Publication Number Publication Date
SG11201701159QA true SG11201701159QA (en) 2017-03-30

Family

ID=55398749

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701159QA SG11201701159QA (en) 2014-08-28 2015-08-19 Atomic layer etching device and atomic layer etching method using same

Country Status (6)

Country Link
JP (1) JP6454409B2 (en)
KR (1) KR101917304B1 (en)
CN (1) CN105448635B (en)
SG (1) SG11201701159QA (en)
TW (1) TWI620260B (en)
WO (1) WO2016029817A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10269566B2 (en) * 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
JP6715129B2 (en) * 2016-08-31 2020-07-01 東京エレクトロン株式会社 Plasma processing device
KR101848908B1 (en) * 2016-09-19 2018-05-15 인베니아 주식회사 Inductively coupled plasma processing apparatus
CN110050331B (en) * 2016-12-09 2023-07-25 Asm Ip 控股有限公司 Thermal atomic layer etching process
JP6948788B2 (en) 2016-12-15 2021-10-13 東京エレクトロン株式会社 Plasma processing equipment
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10529543B2 (en) * 2017-11-15 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Etch process with rotatable shower head
CN110391120B (en) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 Shower nozzle and plasma processing cavity
JP6811202B2 (en) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 Etching method and plasma processing equipment
JP7133975B2 (en) 2018-05-11 2022-09-09 東京エレクトロン株式会社 Etching method and etching apparatus
JP2021019201A (en) 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー．ブイ． Showerhead device for semiconductor processing system
CN110718440B (en) * 2019-10-16 2022-06-14 北京北方华创微电子装备有限公司 Atomic layer etching equipment and etching method
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111883467B (en) * 2020-08-06 2024-03-12 京东方科技集团股份有限公司 Etching groove
CN112103168A (en) * 2020-10-14 2020-12-18 浙江赛威科光电科技有限公司 Weak plasma etching equipment of normal position coating by vaporization
CN112522683B (en) * 2020-12-01 2023-03-24 江苏集萃有机光电技术研究所有限公司 Atomic layer deposition device and OLED packaging method
CN114400174B (en) * 2022-01-18 2023-10-20 长鑫存储技术有限公司 Plasma processing device and method for processing wafer
WO2023183129A1 (en) * 2022-03-22 2023-09-28 Lam Research Corporation Fast atomic layer etch
CN115172134B (en) * 2022-09-06 2022-12-16 江苏鹏举半导体设备技术有限公司 Atomic layer etching device and etching method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
KR101080604B1 (en) * 2010-02-09 2011-11-04 성균관대학교산학협력단 atomic layer etching apparatus and etching method using the same
KR20110098693A (en) * 2010-02-26 2011-09-01 성균관대학교산학협력단 Next generation nano-device etching apparature for lower-damage process
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
SG10201602780VA (en) * 2011-04-11 2016-05-30 Lam Res Corp E-beam enhanced decoupled source for semiconductor processing
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control

Also Published As

Publication number Publication date
JP6454409B2 (en) 2019-01-16
TW201608662A (en) 2016-03-01
TWI620260B (en) 2018-04-01
KR20170048468A (en) 2017-05-08
CN105448635A (en) 2016-03-30
WO2016029817A1 (en) 2016-03-03
CN105448635B (en) 2018-01-09
KR101917304B1 (en) 2018-11-12
JP2017535057A (en) 2017-11-24

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