SG11201607719TA - Method and device for the surface treatment of substrates - Google Patents
Method and device for the surface treatment of substratesInfo
- Publication number
- SG11201607719TA SG11201607719TA SG11201607719TA SG11201607719TA SG11201607719TA SG 11201607719T A SG11201607719T A SG 11201607719TA SG 11201607719T A SG11201607719T A SG 11201607719TA SG 11201607719T A SG11201607719T A SG 11201607719TA SG 11201607719T A SG11201607719T A SG 11201607719TA
- Authority
- SG
- Singapore
- Prior art keywords
- substrates
- surface treatment
- treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000004381 surface treatment Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3132—Evaporating
- H01J2237/3137—Plasma-assisted co-operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/056545 WO2015149846A1 (en) | 2014-04-01 | 2014-04-01 | Method and device for the surface treatment of substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607719TA true SG11201607719TA (en) | 2016-11-29 |
Family
ID=50439364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607719TA SG11201607719TA (en) | 2014-04-01 | 2014-04-01 | Method and device for the surface treatment of substrates |
Country Status (8)
Country | Link |
---|---|
US (3) | US9960030B2 (en) |
EP (2) | EP3127141B1 (en) |
JP (1) | JP6456400B2 (en) |
KR (2) | KR102203973B1 (en) |
CN (3) | CN106463342B (en) |
SG (1) | SG11201607719TA (en) |
TW (2) | TWI829968B (en) |
WO (1) | WO2015149846A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9555441B2 (en) * | 2013-05-03 | 2017-01-31 | Abb Schweiz Ag | Dynamic synchronized masking and coating |
EP4102544A1 (en) | 2014-06-24 | 2022-12-14 | EV Group E. Thallner GmbH | Method and device for treating surfaces on substrates |
SG11201704557PA (en) | 2014-12-23 | 2017-07-28 | Ev Group E Thallner Gmbh | Method and device for prefixing substrates |
JP6388272B1 (en) * | 2016-11-07 | 2018-09-12 | ボンドテック株式会社 | Substrate bonding method, substrate bonding system, and control method for hydrophilic treatment apparatus |
JP2020508564A (en) | 2017-02-21 | 2020-03-19 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Method and apparatus for bonding substrates |
KR102464623B1 (en) * | 2018-02-28 | 2022-11-09 | 주식회사 히타치하이테크 | Ion milling device and ion source adjustment method of ion milling device |
US11742231B2 (en) * | 2019-10-18 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Movable wafer holder for film deposition chamber having six degrees of freedom |
CN112975117B (en) * | 2020-08-27 | 2022-09-13 | 重庆康佳光电技术研究院有限公司 | Laser stripping method and device |
KR102445655B1 (en) * | 2022-04-14 | 2022-09-23 | 주식회사 위드텍 | TD analysis automation system and analysis method using it |
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US4142958A (en) * | 1978-04-13 | 1979-03-06 | Litton Systems, Inc. | Method for fabricating multi-layer optical films |
US4547432A (en) * | 1984-07-31 | 1985-10-15 | The United States Of America As Represented By The United States Department Of Energy | Method of bonding silver to glass and mirrors produced according to this method |
JPS6187338A (en) * | 1984-10-05 | 1986-05-02 | Nec Corp | Method of dry cleaning silicon surface irradiated with multiple beams |
JPS6187338U (en) | 1984-11-14 | 1986-06-07 | ||
JPS61160938A (en) * | 1985-01-09 | 1986-07-21 | Nec Corp | Damage removal for si substrate after dry etching |
JPS6423538A (en) * | 1987-07-20 | 1989-01-26 | Nec Corp | Method and equipment for manufacturing semiconductor device |
JPH0513394A (en) * | 1991-07-02 | 1993-01-22 | Nissin Electric Co Ltd | Cleaning method for surface of substrate to form film thereon |
US5616179A (en) * | 1993-12-21 | 1997-04-01 | Commonwealth Scientific Corporation | Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films |
AT405775B (en) | 1998-01-13 | 1999-11-25 | Thallner Erich | Method and apparatus for bringing together wafer-type (slice-type, disk-shaped) semiconductor substrates in an aligned manner |
GB9822294D0 (en) * | 1998-10-14 | 1998-12-09 | Univ Birmingham | Contaminant removal method |
DE69942020D1 (en) | 1998-12-11 | 2010-04-01 | Surface Technology Systems Plc | PLASMA TREATMENT DEVICE |
SE9903213D0 (en) | 1999-06-21 | 1999-09-10 | Carl Fredrik Carlstroem | Dry etching process of compound semiconductor materials |
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JP5355928B2 (en) * | 2008-05-09 | 2013-11-27 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor substrate by bonding method |
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CN101957554A (en) * | 2009-07-14 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Method for removing protective film glue on photomask |
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KR102092432B1 (en) | 2013-03-27 | 2020-03-24 | 에베 그룹 에. 탈너 게엠베하 | Receptacle device, device and method for handling substrate stacks |
JP6258479B2 (en) | 2013-06-17 | 2018-01-10 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Apparatus and method for aligning multiple substrates |
KR20150080449A (en) | 2013-12-06 | 2015-07-09 | 에베 그룹 에. 탈너 게엠베하 | Device and method for aligning substrates |
JP6187338B2 (en) | 2014-03-14 | 2017-08-30 | 富士ゼロックス株式会社 | Fixing device, image forming apparatus |
-
2014
- 2014-04-01 CN CN201480077227.4A patent/CN106463342B/en active Active
- 2014-04-01 WO PCT/EP2014/056545 patent/WO2015149846A1/en active Application Filing
- 2014-04-01 CN CN202010126487.3A patent/CN111261498A/en active Pending
- 2014-04-01 KR KR1020167025404A patent/KR102203973B1/en active IP Right Grant
- 2014-04-01 EP EP14715265.6A patent/EP3127141B1/en active Active
- 2014-04-01 US US15/122,943 patent/US9960030B2/en active Active
- 2014-04-01 KR KR1020217000774A patent/KR102306979B1/en active IP Right Grant
- 2014-04-01 CN CN202010126479.9A patent/CN111326405A/en active Pending
- 2014-04-01 SG SG11201607719TA patent/SG11201607719TA/en unknown
- 2014-04-01 JP JP2016557318A patent/JP6456400B2/en active Active
- 2014-04-01 EP EP21157175.7A patent/EP3859766A1/en active Pending
-
2015
- 2015-03-05 TW TW109134182A patent/TWI829968B/en active
- 2015-03-05 TW TW104107085A patent/TWI709652B/en active
-
2018
- 2018-03-13 US US15/919,372 patent/US10867783B2/en active Active
-
2020
- 2020-11-05 US US17/090,280 patent/US11901172B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106463342B (en) | 2020-04-03 |
EP3127141B1 (en) | 2021-03-24 |
US11901172B2 (en) | 2024-02-13 |
KR102306979B1 (en) | 2021-09-30 |
KR102203973B1 (en) | 2021-01-18 |
TW201600619A (en) | 2016-01-01 |
US20180204717A1 (en) | 2018-07-19 |
TW202106901A (en) | 2021-02-16 |
TWI829968B (en) | 2024-01-21 |
TWI709652B (en) | 2020-11-11 |
CN111261498A (en) | 2020-06-09 |
US10867783B2 (en) | 2020-12-15 |
US20170069483A1 (en) | 2017-03-09 |
WO2015149846A1 (en) | 2015-10-08 |
EP3127141A1 (en) | 2017-02-08 |
JP6456400B2 (en) | 2019-01-23 |
EP3859766A1 (en) | 2021-08-04 |
JP2017513216A (en) | 2017-05-25 |
CN111326405A (en) | 2020-06-23 |
KR20160140620A (en) | 2016-12-07 |
KR20210007039A (en) | 2021-01-19 |
US20210125821A1 (en) | 2021-04-29 |
US9960030B2 (en) | 2018-05-01 |
CN106463342A (en) | 2017-02-22 |
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