SG11201504015SA - Composite substrate manufacturing method, and composite substrate - Google Patents
Composite substrate manufacturing method, and composite substrateInfo
- Publication number
- SG11201504015SA SG11201504015SA SG11201504015SA SG11201504015SA SG11201504015SA SG 11201504015S A SG11201504015S A SG 11201504015SA SG 11201504015S A SG11201504015S A SG 11201504015SA SG 11201504015S A SG11201504015S A SG 11201504015SA SG 11201504015S A SG11201504015S A SG 11201504015SA
- Authority
- SG
- Singapore
- Prior art keywords
- composite substrate
- manufacturing
- substrate manufacturing
- composite
- substrate
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012255865 | 2012-11-22 | ||
PCT/JP2013/081091 WO2014080874A1 (en) | 2012-11-22 | 2013-11-19 | Composite substrate manufacturing method, and composite substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201504015SA true SG11201504015SA (en) | 2015-06-29 |
Family
ID=50776056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504015SA SG11201504015SA (en) | 2012-11-22 | 2013-11-19 | Composite substrate manufacturing method, and composite substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US9613849B2 (en) |
EP (1) | EP2924715A4 (en) |
JP (1) | JP6265130B2 (en) |
KR (1) | KR102120509B1 (en) |
CN (1) | CN104798176B (en) |
SG (1) | SG11201504015SA (en) |
TW (1) | TWI627657B (en) |
WO (1) | WO2014080874A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570542B2 (en) | 2014-04-01 | 2017-02-14 | Infineon Technologies Ag | Semiconductor device including a vertical edge termination structure and method of manufacturing |
US20150364550A1 (en) * | 2014-06-16 | 2015-12-17 | Infineon Technologies Ag | Optimized layer for semiconductor |
JP6313189B2 (en) * | 2014-11-04 | 2018-04-18 | 東芝メモリ株式会社 | Manufacturing method of semiconductor device |
US10781104B2 (en) | 2014-12-22 | 2020-09-22 | Shin-Etsu Chemical Co., Ltd. | Composite substrate, method for forming nanocarbon film, and nanocarbon film |
JP6524862B2 (en) | 2015-08-27 | 2019-06-05 | 株式会社Sumco | SOI wafer manufacturing method and SOI wafer |
JP6572694B2 (en) * | 2015-09-11 | 2019-09-11 | 信越化学工業株式会社 | Method for manufacturing SiC composite substrate and method for manufacturing semiconductor substrate |
DE102015121056A1 (en) | 2015-12-03 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Method for producing a plurality of components and component |
TWI751127B (en) * | 2015-12-17 | 2022-01-01 | 日商信越化學工業股份有限公司 | Sapphire composite substrate and manufacturing method thereof |
US10593748B2 (en) * | 2016-03-07 | 2020-03-17 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
JP6443394B2 (en) * | 2016-06-06 | 2018-12-26 | 信越半導体株式会社 | Manufacturing method of bonded SOI wafer |
CN108022934A (en) * | 2016-11-01 | 2018-05-11 | 沈阳硅基科技有限公司 | A kind of preparation method of film |
KR102192462B1 (en) * | 2017-12-14 | 2020-12-17 | 삼성에스디아이 주식회사 | Composition for forming silica layer, silica layer, and electronic device |
DE102019111377A1 (en) * | 2018-05-28 | 2019-11-28 | Infineon Technologies Ag | A method of processing a silicon carbide wafer and a silicon carbide semiconductor device |
EP3831988A4 (en) * | 2018-08-01 | 2022-06-29 | Kyocera Corporation | Composite substrate, piezoelectric element, and method for manufacturing composite substrate |
CN109678106B (en) * | 2018-11-13 | 2020-10-30 | 中国科学院上海微***与信息技术研究所 | Preparation method of silicon-based heterogeneous integrated 4H-SiC epitaxial thin film structure |
TWI727515B (en) * | 2018-11-30 | 2021-05-11 | 台灣積體電路製造股份有限公司 | Method of forming soi structure |
US11232974B2 (en) * | 2018-11-30 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication method of metal-free SOI wafer |
DE102018132447B4 (en) | 2018-12-17 | 2022-10-13 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
CN111489969A (en) * | 2019-01-29 | 2020-08-04 | 东莞新科技术研究开发有限公司 | Heat treatment method of semiconductor silicon wafer |
JP6680378B2 (en) * | 2019-03-13 | 2020-04-15 | 株式会社Sumco | SOI wafer |
CN111864054B (en) * | 2020-07-07 | 2021-12-24 | 中国科学院上海微***与信息技术研究所 | Surface optimization method of heterogeneous integrated piezoelectric single crystal thin film substrate |
CN111883647B (en) * | 2020-07-23 | 2021-05-25 | 中国科学院上海微***与信息技术研究所 | Preparation method of piezoelectric film, piezoelectric film and surface acoustic wave filter |
JP2022191901A (en) | 2021-06-16 | 2022-12-28 | キオクシア株式会社 | Semiconductor device and method for manufacturing the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4728030Y1 (en) | 1967-08-03 | 1972-08-25 | ||
JPH08148559A (en) * | 1994-11-15 | 1996-06-07 | Fujitsu Ltd | Manufacture of semiconductor device with insulation film |
JP4049841B2 (en) * | 1996-12-27 | 2008-02-20 | Azエレクトロニックマテリアルズ株式会社 | Method for forming silicon nitride thin film |
JP4507395B2 (en) * | 2000-11-30 | 2010-07-21 | セイコーエプソン株式会社 | Method for manufacturing element substrate for electro-optical device |
JP4185341B2 (en) * | 2002-09-25 | 2008-11-26 | パイオニア株式会社 | Multilayer barrier film structure, organic electroluminescence display panel, and manufacturing method |
JP4018596B2 (en) * | 2002-10-02 | 2007-12-05 | 株式会社東芝 | Manufacturing method of semiconductor device |
KR100499171B1 (en) | 2003-07-21 | 2005-07-01 | 삼성전자주식회사 | Method for forming a silicon oxide layer using spin-on glass |
JP4342895B2 (en) | 2003-10-06 | 2009-10-14 | 東京エレクトロン株式会社 | Heat treatment method and heat treatment apparatus |
US7785948B2 (en) | 2004-08-20 | 2010-08-31 | National Institute Of Advanced Industrial Science And Technology | Semiconductor element and process for producing the same |
JP4728030B2 (en) | 2005-04-14 | 2011-07-20 | 信越化学工業株式会社 | Manufacturing method of SOI wafer |
CN101258580B (en) * | 2005-09-05 | 2010-05-19 | 夏普株式会社 | Semiconductor device, method for manufacturing same, and display |
TWI389250B (en) | 2006-01-18 | 2013-03-11 | Az Electronic Mat Ip Japan Kk | Method for producing siliceous film and substrate with siliceous film produced thereby |
KR101335713B1 (en) * | 2007-02-28 | 2013-12-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Process for producing laminated substrate and laminated substrate |
US7972938B2 (en) * | 2008-06-05 | 2011-07-05 | Ues, Inc. | Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe |
JP4944228B2 (en) | 2009-09-16 | 2012-05-30 | 株式会社日立国際電気 | Substrate processing method and substrate processing apparatus |
KR101854851B1 (en) * | 2011-08-26 | 2018-06-14 | 엘지이노텍 주식회사 | Light emitting diode |
-
2013
- 2013-11-19 CN CN201380061023.7A patent/CN104798176B/en active Active
- 2013-11-19 US US14/440,620 patent/US9613849B2/en active Active
- 2013-11-19 JP JP2014548559A patent/JP6265130B2/en active Active
- 2013-11-19 KR KR1020157012665A patent/KR102120509B1/en active IP Right Grant
- 2013-11-19 WO PCT/JP2013/081091 patent/WO2014080874A1/en active Application Filing
- 2013-11-19 SG SG11201504015SA patent/SG11201504015SA/en unknown
- 2013-11-19 EP EP13856183.2A patent/EP2924715A4/en active Pending
- 2013-11-21 TW TW102142459A patent/TWI627657B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20150087229A (en) | 2015-07-29 |
JPWO2014080874A1 (en) | 2017-01-05 |
WO2014080874A1 (en) | 2014-05-30 |
US20150303097A1 (en) | 2015-10-22 |
TWI627657B (en) | 2018-06-21 |
EP2924715A1 (en) | 2015-09-30 |
TW201440116A (en) | 2014-10-16 |
JP6265130B2 (en) | 2018-01-24 |
CN104798176A (en) | 2015-07-22 |
KR102120509B1 (en) | 2020-06-08 |
CN104798176B (en) | 2018-01-02 |
US9613849B2 (en) | 2017-04-04 |
EP2924715A4 (en) | 2016-07-27 |
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