SG11201405638UA - Methods for the selective removal of ashed spin-on glass - Google Patents

Methods for the selective removal of ashed spin-on glass

Info

Publication number
SG11201405638UA
SG11201405638UA SG11201405638UA SG11201405638UA SG11201405638UA SG 11201405638U A SG11201405638U A SG 11201405638UA SG 11201405638U A SG11201405638U A SG 11201405638UA SG 11201405638U A SG11201405638U A SG 11201405638UA SG 11201405638U A SG11201405638U A SG 11201405638UA
Authority
SG
Singapore
Prior art keywords
ashed
spin
glass
methods
selective removal
Prior art date
Application number
SG11201405638UA
Inventor
Hsing-Chen Wu
Sheng-Hung Tu
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11201405638UA publication Critical patent/SG11201405638UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C11D2111/22—
SG11201405638UA 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass SG11201405638UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261609658P 2012-03-12 2012-03-12
PCT/US2013/030370 WO2013138276A1 (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass

Publications (1)

Publication Number Publication Date
SG11201405638UA true SG11201405638UA (en) 2014-10-30

Family

ID=49161703

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201607609YA SG10201607609YA (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass
SG11201405638UA SG11201405638UA (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass
SG10202102525WA SG10202102525WA (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201607609YA SG10201607609YA (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202102525WA SG10202102525WA (en) 2012-03-12 2013-03-12 Methods for the selective removal of ashed spin-on glass

Country Status (7)

Country Link
US (1) US20150075570A1 (en)
EP (1) EP2826062A4 (en)
KR (3) KR102352465B1 (en)
CN (1) CN104488068B (en)
SG (3) SG10201607609YA (en)
TW (1) TWI592468B (en)
WO (1) WO2013138276A1 (en)

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EP2798669B1 (en) 2011-12-28 2021-03-31 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
EP2814895A4 (en) 2012-02-15 2015-10-07 Entegris Inc Post-cmp removal using compositions and method of use
KR20150016574A (en) 2012-05-18 2015-02-12 인티그리스, 인코포레이티드 Composition and process for stripping photoresist from a surface including titanium nitride
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
EP2964725B1 (en) 2013-03-04 2021-06-23 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
SG10201708364XA (en) 2013-06-06 2017-11-29 Entegris Inc Compositions and methods for selectively etching titanium nitride
TWI683889B (en) 2013-07-31 2020-02-01 美商恩特葛瑞斯股份有限公司 Aqueous formulations for removing metal hard mask and post-etch residue with cu/w compatibility
CN105492576B (en) 2013-08-30 2019-01-04 恩特格里斯公司 The composition and method of selective etch titanium nitride
WO2015089023A1 (en) 2013-12-11 2015-06-18 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
US9472420B2 (en) * 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US9593297B2 (en) 2014-10-15 2017-03-14 Micron Technology, Inc. Compositions for removing residues and related methods
WO2017025536A1 (en) * 2015-08-12 2017-02-16 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates
KR101966808B1 (en) * 2016-09-30 2019-04-08 세메스 주식회사 Anhydrous substrate cleaning compositions, substrate cleaning method and substrate treating apparatus
US11035044B2 (en) * 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films
WO2019026677A1 (en) * 2017-07-31 2019-02-07 三菱瓦斯化学株式会社 Liquid composition for reducing damage of cobalt, alumina, interlayer insulating film and silicon nitride, and washing method using same
US10787743B2 (en) * 2017-08-28 2020-09-29 The Boeing Company Depositing a structurally hard, wear resistant metal coating onto a substrate
JPWO2019208685A1 (en) * 2018-04-27 2021-05-27 三菱瓦斯化学株式会社 Aqueous composition and cleaning method using it
US11352593B2 (en) * 2018-04-27 2022-06-07 Mitsubishi Gas Chemical Company, Inc. Aqueous composition and cleaning method using same
JPWO2019208684A1 (en) 2018-04-27 2021-05-13 三菱瓦斯化学株式会社 Aqueous composition and cleaning method using it
CN112384597A (en) * 2018-07-06 2021-02-19 恩特格里斯公司 Improvements in selectively etched materials
WO2024053819A1 (en) * 2022-09-05 2024-03-14 삼성전자 주식회사 Surface treatment composition and surface treatment method using same

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Also Published As

Publication number Publication date
SG10202102525WA (en) 2021-04-29
KR20200030121A (en) 2020-03-19
TW201348405A (en) 2013-12-01
TWI592468B (en) 2017-07-21
CN104488068B (en) 2019-02-12
EP2826062A1 (en) 2015-01-21
KR20210018976A (en) 2021-02-18
WO2013138276A1 (en) 2013-09-19
SG10201607609YA (en) 2016-10-28
CN104488068A (en) 2015-04-01
KR20140138902A (en) 2014-12-04
KR102352465B1 (en) 2022-01-18
US20150075570A1 (en) 2015-03-19
EP2826062A4 (en) 2016-06-22

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