SG111146A1 - Cmos sram cell configured using multiple-gate transistors - Google Patents
Cmos sram cell configured using multiple-gate transistorsInfo
- Publication number
- SG111146A1 SG111146A1 SG200305605A SG200305605A SG111146A1 SG 111146 A1 SG111146 A1 SG 111146A1 SG 200305605 A SG200305605 A SG 200305605A SG 200305605 A SG200305605 A SG 200305605A SG 111146 A1 SG111146 A1 SG 111146A1
- Authority
- SG
- Singapore
- Prior art keywords
- sram cell
- gate transistors
- cell configured
- cmos sram
- cmos
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/305,728 US6864519B2 (en) | 2002-11-26 | 2002-11-26 | CMOS SRAM cell configured using multiple-gate transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
SG111146A1 true SG111146A1 (en) | 2005-05-30 |
Family
ID=32325500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200305605A SG111146A1 (en) | 2002-11-26 | 2003-09-24 | Cmos sram cell configured using multiple-gate transistors |
Country Status (4)
Country | Link |
---|---|
US (1) | US6864519B2 (zh) |
CN (1) | CN1301557C (zh) |
SG (1) | SG111146A1 (zh) |
TW (2) | TW591753B (zh) |
Families Citing this family (87)
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US7728360B2 (en) * | 2002-12-06 | 2010-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple-gate transistor structure |
US6762448B1 (en) | 2003-04-03 | 2004-07-13 | Advanced Micro Devices, Inc. | FinFET device with multiple fin structures |
US7074656B2 (en) * | 2003-04-29 | 2006-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping of semiconductor fin devices |
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US6943405B2 (en) * | 2003-07-01 | 2005-09-13 | International Business Machines Corporation | Integrated circuit having pairs of parallel complementary FinFETs |
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US7498225B1 (en) | 2003-12-04 | 2009-03-03 | Advanced Micro Devices, Inc. | Systems and methods for forming multiple fin structures using metal-induced-crystallization |
US7365398B2 (en) * | 2004-02-11 | 2008-04-29 | Cornell Research Foundation, Inc. | Compact SRAMs and other multiple transistor structures |
US6989308B2 (en) * | 2004-03-11 | 2006-01-24 | International Business Machines Corporation | Method of forming FinFET gates without long etches |
DE102004020593A1 (de) * | 2004-04-27 | 2005-11-24 | Infineon Technologies Ag | Fin-Feldeffekttransistor-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Anordnung |
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US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7361958B2 (en) * | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
KR100630704B1 (ko) * | 2004-10-20 | 2006-10-02 | 삼성전자주식회사 | 비평면 구조의 트랜지스터를 구비한 cmos 이미지 센서및 그 제조 방법 |
US20060086977A1 (en) * | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
KR100698068B1 (ko) * | 2004-12-30 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 핀 구조 전계 트랜지스터 및 이의 제조방법 |
US7470951B2 (en) | 2005-01-31 | 2008-12-30 | Freescale Semiconductor, Inc. | Hybrid-FET and its application as SRAM |
KR100688056B1 (ko) | 2005-01-31 | 2007-03-02 | 주식회사 하이닉스반도체 | 오메가 게이트를 갖는 반도체소자 및 그의 제조 방법 |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
KR100702011B1 (ko) * | 2005-03-16 | 2007-03-30 | 삼성전자주식회사 | 다중 게이트 트랜지스터들을 채택하는 씨모스 에스램 셀들및 그 제조방법들 |
DE102005022763B4 (de) * | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
US7348642B2 (en) | 2005-08-03 | 2008-03-25 | International Business Machines Corporation | Fin-type field effect transistor |
US7352609B2 (en) * | 2005-08-15 | 2008-04-01 | International Business Machines Corporation | Voltage controlled static random access memory |
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US7452768B2 (en) * | 2005-10-25 | 2008-11-18 | Freescale Semiconductor, Inc. | Multiple device types including an inverted-T channel transistor and method therefor |
US8513066B2 (en) * | 2005-10-25 | 2013-08-20 | Freescale Semiconductor, Inc. | Method of making an inverted-T channel transistor |
WO2007063990A1 (ja) * | 2005-12-02 | 2007-06-07 | Nec Corporation | 半導体装置およびその製造方法 |
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US20070185495A1 (en) * | 2006-01-30 | 2007-08-09 | Howmedica International S. De R. L. | Plug-in syringe stand |
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KR100832017B1 (ko) * | 2006-03-31 | 2008-05-26 | 주식회사 하이닉스반도체 | 채널면적을 증가시킨 반도체소자 및 그의 제조 방법 |
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JP4487266B2 (ja) * | 2006-08-30 | 2010-06-23 | エルピーダメモリ株式会社 | 半導体装置 |
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US7812373B2 (en) * | 2007-02-12 | 2010-10-12 | Infineon Technologies Ag | MuGFET array layout |
US20080211568A1 (en) * | 2007-03-01 | 2008-09-04 | Infineon Technologies Ag | MuGFET POWER SWITCH |
US20080212392A1 (en) * | 2007-03-02 | 2008-09-04 | Infineon Technologies | Multiple port mugfet sram |
US20080239859A1 (en) * | 2007-03-30 | 2008-10-02 | Infineon Technologies Ag | Access device |
US7671422B2 (en) * | 2007-05-04 | 2010-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pseudo 6T SRAM cell |
JP4461154B2 (ja) * | 2007-05-15 | 2010-05-12 | 株式会社東芝 | 半導体装置 |
US7915681B2 (en) * | 2007-06-18 | 2011-03-29 | Infineon Technologies Ag | Transistor with reduced charge carrier mobility |
US20090007036A1 (en) * | 2007-06-29 | 2009-01-01 | International Business Machines Corporation | Integrated Fin-Local Interconnect Structure |
US20090001426A1 (en) * | 2007-06-29 | 2009-01-01 | Kangguo Cheng | Integrated Fin-Local Interconnect Structure |
US7737501B2 (en) * | 2007-07-11 | 2010-06-15 | International Business Machines Corporation | FinFET SRAM with asymmetric gate and method of manufacture thereof |
US7732872B2 (en) * | 2007-10-25 | 2010-06-08 | International Business Machines Corporation | Integration scheme for multiple metal gate work function structures |
FR2923646A1 (fr) * | 2007-11-09 | 2009-05-15 | Commissariat Energie Atomique | Cellule memoire sram dotee de transistors a structure multi-canaux verticale |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US8004042B2 (en) | 2009-03-20 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Static random access memory (SRAM) cell and method for forming same |
CN102034831B (zh) * | 2009-09-28 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | 具有环绕堆叠栅鳍式场效应晶体管存储器件及形成方法 |
US8395195B2 (en) * | 2010-02-09 | 2013-03-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bottom-notched SiGe FinFET formation using condensation |
US8675397B2 (en) * | 2010-06-25 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell structure for dual-port SRAM |
US8609495B2 (en) * | 2010-04-08 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid gate process for fabricating finfet device |
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US9472550B2 (en) * | 2010-11-23 | 2016-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjusted fin width in integrated circuitry |
US8525267B2 (en) * | 2010-11-23 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for forming Fins in integrated circuitry |
US9006075B2 (en) | 2011-11-17 | 2015-04-14 | Micron Technology, Inc. | Memory cells, semiconductor devices including such cells, and methods of fabrication |
US8946821B2 (en) * | 2012-01-11 | 2015-02-03 | GlobalFoundries, Inc. | SRAM integrated circuits and methods for their fabrication |
US9312268B2 (en) * | 2014-09-02 | 2016-04-12 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with FinFET nonvolatile memory |
CN105719688B (zh) * | 2014-12-04 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | Sram存储器和形成sram存储器的方法 |
US9859286B2 (en) * | 2014-12-23 | 2018-01-02 | International Business Machines Corporation | Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices |
CN106206443B (zh) * | 2015-04-29 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | Sram单元的形成方法 |
KR102399023B1 (ko) * | 2015-06-22 | 2022-05-16 | 삼성전자주식회사 | 반도체 장치 |
US9543935B1 (en) | 2015-07-08 | 2017-01-10 | International Business Machines Corporation | Programmable delay circuit including hybrid fin field effect transistors (finFETs) |
US9972550B2 (en) * | 2015-10-02 | 2018-05-15 | Globalfoundries Inc. | Source/drain epitaxial electrical monitor |
US9455023B1 (en) * | 2015-10-14 | 2016-09-27 | Oracle International Corporation | Wordline under-driving using a virtual power network |
US10340348B2 (en) * | 2015-11-30 | 2019-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing finFETs with self-align contacts |
KR102415328B1 (ko) | 2015-12-03 | 2022-06-30 | 삼성전자주식회사 | 전기적 특성을 개선할 수 있는 에스램 소자 및 이를 포함하는 로직 소자 |
US10056457B2 (en) | 2016-05-23 | 2018-08-21 | General Electric Company | Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions |
US9928886B2 (en) * | 2016-06-23 | 2018-03-27 | Chih-Cheng Hsiao | Low power memory device |
KR102360410B1 (ko) * | 2017-08-30 | 2022-02-08 | 삼성전자주식회사 | 반도체 장치 |
US10559573B2 (en) | 2017-09-22 | 2020-02-11 | United Microelectronics Corp. | Static random access memory structure |
CN109545252B (zh) * | 2017-09-22 | 2021-10-08 | 联华电子股份有限公司 | 静态随机存取存储器的布局图案 |
CN109524462B (zh) * | 2018-12-29 | 2024-03-22 | 苏州汉骅半导体有限公司 | 一种鳍型场效应管 |
US10971505B1 (en) * | 2020-02-10 | 2021-04-06 | Taiwan Semiconductor Manufacturing Company Limited | Memory devices and methods of manufacturing thereof |
US11521676B2 (en) * | 2020-04-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | SRAM structure with asymmetric interconnection |
CN112071863A (zh) * | 2020-09-04 | 2020-12-11 | Tcl华星光电技术有限公司 | 一种阵列基板 |
CN116648059A (zh) * | 2020-10-16 | 2023-08-25 | 福建省晋华集成电路有限公司 | 半导体存储装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5266507A (en) * | 1992-05-18 | 1993-11-30 | Industrial Technology Research Institute | Method of fabricating an offset dual gate thin film field effect transistor |
US5814895A (en) * | 1995-12-22 | 1998-09-29 | Sony Corporation | Static random access memory having transistor elements formed on side walls of a trench in a semiconductor substrate |
KR100236090B1 (ko) * | 1996-12-31 | 1999-12-15 | 김영환 | 에스 램(sram) 셀 및 이의 제조방법 |
JP3425853B2 (ja) * | 1997-08-29 | 2003-07-14 | Necエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US6380024B1 (en) * | 2000-02-07 | 2002-04-30 | Taiwan Semiconductor Manufacturing Company | Method of fabricating an SRAM cell featuring dual silicide gates and four buried contact regions |
US6936887B2 (en) * | 2001-05-18 | 2005-08-30 | Sandisk Corporation | Non-volatile memory cells utilizing substrate trenches |
US6963103B2 (en) * | 2001-08-30 | 2005-11-08 | Micron Technology, Inc. | SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US6657252B2 (en) * | 2002-03-19 | 2003-12-02 | International Business Machines Corporation | FinFET CMOS with NVRAM capability |
US6573549B1 (en) * | 2002-06-21 | 2003-06-03 | Texas Instruments Incorporated | Dynamic threshold voltage 6T SRAM cell |
-
2002
- 2002-11-26 US US10/305,728 patent/US6864519B2/en not_active Expired - Lifetime
- 2002-11-29 TW TW091134814A patent/TW591753B/zh not_active IP Right Cessation
-
2003
- 2003-09-02 TW TW092124171A patent/TWI244163B/zh not_active IP Right Cessation
- 2003-09-24 SG SG200305605A patent/SG111146A1/en unknown
- 2003-10-17 CN CNB2003101019558A patent/CN1301557C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW200409297A (en) | 2004-06-01 |
US6864519B2 (en) | 2005-03-08 |
TW200409296A (en) | 2004-06-01 |
TWI244163B (en) | 2005-11-21 |
TW591753B (en) | 2004-06-11 |
CN1503368A (zh) | 2004-06-09 |
CN1301557C (zh) | 2007-02-21 |
US20040099885A1 (en) | 2004-05-27 |
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