SG10202102647SA - Vaporizer, substrate processing apparatus, cleaning method and method of manufacturing semiconductor device - Google Patents

Vaporizer, substrate processing apparatus, cleaning method and method of manufacturing semiconductor device

Info

Publication number
SG10202102647SA
SG10202102647SA SG10202102647SA SG10202102647SA SG 10202102647S A SG10202102647S A SG 10202102647SA SG 10202102647S A SG10202102647S A SG 10202102647SA SG 10202102647S A SG10202102647S A SG 10202102647SA
Authority
SG
Singapore
Prior art keywords
vaporizer
semiconductor device
processing apparatus
substrate processing
manufacturing semiconductor
Prior art date
Application number
Inventor
Li Gen
Yamazaki Hirohisa
Suzaki Kenichi
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202102647SA publication Critical patent/SG10202102647SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • B01D1/0082—Regulation; Control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10202102647S 2020-03-19 2021-03-16 Vaporizer, substrate processing apparatus, cleaning method and method of manufacturing semiconductor device SG10202102647SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020048652A JP7033622B2 (en) 2020-03-19 2020-03-19 Vaporizer, substrate processing equipment, cleaning method and manufacturing method of semiconductor equipment

Publications (1)

Publication Number Publication Date
SG10202102647SA true SG10202102647SA (en) 2021-10-28

Family

ID=77747601

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202102647S SG10202102647SA (en) 2020-03-19 2021-03-16 Vaporizer, substrate processing apparatus, cleaning method and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US11873555B2 (en)
JP (1) JP7033622B2 (en)
KR (1) KR20210117950A (en)
CN (1) CN113496918A (en)
SG (1) SG10202102647SA (en)
TW (1) TWI788787B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7203070B2 (en) * 2020-09-23 2023-01-12 株式会社Kokusai Electric Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method
JP2022084409A (en) * 2020-11-26 2022-06-07 株式会社島津製作所 Vacuum valve and estimation system

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01156741U (en) * 1988-04-19 1989-10-27
JP2557616Y2 (en) 1991-06-29 1997-12-10 株式会社エステック Liquid material vaporizer
JP2000252269A (en) * 1992-09-21 2000-09-14 Mitsubishi Electric Corp Equipment and method for liquid vaporization
US6647930B2 (en) * 2002-02-11 2003-11-18 L'Air Liquide-Societe Anonyme à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude Ammonia vapor generation
JP4056888B2 (en) 2003-01-07 2008-03-05 株式会社島津製作所 Vaporizer
JP2004323894A (en) 2003-04-23 2004-11-18 Sekisui Chem Co Ltd Gas supply stabilizer, and apparatus and method for vapor phase growth
JP5213868B2 (en) 2007-09-19 2013-06-19 株式会社日立国際電気 Cleaning method and substrate processing apparatus
JPWO2009037990A1 (en) 2007-09-21 2011-01-06 積水化学工業株式会社 Surface protective adhesive sheet
JP5200551B2 (en) * 2008-01-18 2013-06-05 東京エレクトロン株式会社 Vaporized raw material supply apparatus, film forming apparatus, and vaporized raw material supply method
US8348248B2 (en) 2009-03-11 2013-01-08 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Bubbling supply system for stable precursor supply
JP2011114002A (en) * 2009-11-24 2011-06-09 Hitachi Kokusai Electric Inc Substrate treating device
JP5852774B2 (en) 2010-07-14 2016-02-03 株式会社堀場エステック Liquid sample heating vaporizer
JP2014007289A (en) * 2012-06-25 2014-01-16 Tokyo Electron Ltd Gas supply device and film forming device
KR101640836B1 (en) 2014-06-09 2016-07-20 (주)지오엘리먼트 Canister with the same, and evaporator
JP2016084507A (en) * 2014-10-24 2016-05-19 東京エレクトロン株式会社 Raw material gas supply apparatus, and film deposition apparatus
JP6712440B2 (en) * 2015-03-13 2020-06-24 株式会社堀場エステック Liquid material vaporizer, liquid material vaporization system
JP6457104B2 (en) * 2015-09-29 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and program
US11402250B2 (en) * 2016-12-27 2022-08-02 Fujikin Incorporated Liquid level meter, vaporizer equipped with the same, and liquid level detection method
CN207727146U (en) * 2017-09-21 2018-08-14 北京北方华创微电子装备有限公司 Air source and semiconductor processing equipment
WO2019180906A1 (en) 2018-03-23 2019-09-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Vaporizer, substrate treatment device, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2021150472A (en) 2021-09-27
US20210292895A1 (en) 2021-09-23
US20240093361A1 (en) 2024-03-21
CN113496918A (en) 2021-10-12
US11873555B2 (en) 2024-01-16
KR20210117950A (en) 2021-09-29
TWI788787B (en) 2023-01-01
JP7033622B2 (en) 2022-03-10
TW202201537A (en) 2022-01-01

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