SG10201804609UA - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

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Publication number
SG10201804609UA
SG10201804609UA SG10201804609UA SG10201804609UA SG10201804609UA SG 10201804609U A SG10201804609U A SG 10201804609UA SG 10201804609U A SG10201804609U A SG 10201804609UA SG 10201804609U A SG10201804609U A SG 10201804609UA SG 10201804609U A SG10201804609U A SG 10201804609UA
Authority
SG
Singapore
Prior art keywords
conductive type
doping area
insulating film
gate insulating
semiconductor device
Prior art date
Application number
SG10201804609UA
Inventor
Hwan Kim Guk
Yeong SON Jin
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of SG10201804609UA publication Critical patent/SG10201804609UA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device, includes a first conductive type first doping area, a second conductive type second doping area, a source region, a drain region, a gate insulating film, and a gate electrode. The first conductive type first doping area is formed in a substr ate region. The second conductive type second doping area is formed in the substrate to be spaced apart from the first conductive type first doping area. The source region is formed in the first conductive type first doping area. The drain region is formed in the second conductive type second doping area. The gate insulating film is formed between the source region and the drain region. A thickness of a first end of the gate insulating film is different than a thickness of a second end of the gate insulating film. The gate electrode formed on the gate insulating film. Fig. 3
SG10201804609UA 2017-07-13 2018-05-31 Semiconductor device and manufacturing method thereof SG10201804609UA (en)

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KR1020170089116A KR102299662B1 (en) 2017-07-13 2017-07-13 Semiconductor Device and Method for Fabricating the Same

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US (1) US10727300B2 (en)
KR (1) KR102299662B1 (en)
CN (1) CN109256425A (en)
DE (1) DE102018116869A1 (en)
SG (1) SG10201804609UA (en)
TW (1) TWI791494B (en)

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US11018266B2 (en) * 2018-10-23 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced surface field layer in varactor
KR102642021B1 (en) * 2019-01-31 2024-02-29 매그나칩 반도체 유한회사 Semiconductor device and manufacturing method thereof
US11189565B2 (en) 2020-02-19 2021-11-30 Nanya Technology Corporation Semiconductor device with programmable anti-fuse feature and method for fabricating the same
KR102274813B1 (en) * 2020-02-27 2021-07-07 주식회사 키 파운드리 A Manufacturing Method of Semiconductor Device Using Gate-Through Implantation
KR102362576B1 (en) 2020-04-02 2022-02-11 매그나칩 반도체 유한회사 Semiconductor device and manufacturing method thereof
US11152381B1 (en) * 2020-04-13 2021-10-19 HeFeChip Corporation Limited MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same
US11114140B1 (en) 2020-04-23 2021-09-07 HeFeChip Corporation Limited One time programmable (OTP) bits for physically unclonable functions
US11437082B2 (en) 2020-05-17 2022-09-06 HeFeChip Corporation Limited Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage
CN111710719A (en) * 2020-06-23 2020-09-25 杰华特微电子（杭州）有限公司 Lateral double-diffused transistor and manufacturing method thereof
US11430888B2 (en) 2020-07-02 2022-08-30 Micron Technology, Inc. Integrated assemblies having transistors configured for high-voltage applications
KR102415934B1 (en) * 2020-08-12 2022-07-01 매그나칩 반도체 유한회사 Semiconductor device
US11469307B2 (en) 2020-09-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501210A (en) * 1985-04-29 1986-11-17 Philips Nv LOAD-COUPLED DEVICE.
US5536675A (en) * 1993-12-30 1996-07-16 Intel Corporation Isolation structure formation for semiconductor circuit fabrication
US6117738A (en) 1998-11-20 2000-09-12 United Microelectronics Corp. Method for fabricating a high-bias semiconductor device
EP1321985B1 (en) * 2001-12-20 2007-10-24 STMicroelectronics S.r.l. Method of integrating metal oxide semiconductor field effect transistors
DE102004049246A1 (en) 2004-10-01 2006-04-06 Atmel Germany Gmbh Lateral DMOS transistor and method for its manufacture
KR100602096B1 (en) * 2004-12-29 2006-07-19 동부일렉트로닉스 주식회사 A method for manufacturing a semiconductor device
KR100718772B1 (en) * 2005-12-29 2007-05-16 매그나칩 반도체 유한회사 Method for manufacturing a semiconductor device
US7829945B2 (en) * 2007-10-26 2010-11-09 International Business Machines Corporation Lateral diffusion field effect transistor with asymmetric gate dielectric profile
US8088656B2 (en) 2009-08-14 2012-01-03 International Business Machines Corporation Fabricating ESD devices using MOSFET and LDMOS
KR20110078531A (en) * 2009-12-31 2011-07-07 주식회사 동부하이텍 High voltage semiconductor device and manufacturing method of high voltage semiconductor device
US20130020632A1 (en) 2011-07-18 2013-01-24 Disney Donald R Lateral transistor with capacitively depleted drift region
KR101467703B1 (en) * 2013-10-10 2014-12-02 매그나칩 반도체 유한회사 semiconductor device and manufacturing method thereof
KR20160012459A (en) * 2014-07-24 2016-02-03 주식회사 동부하이텍 Semiconductor device and method of manufacturing the same
US9553187B2 (en) * 2014-12-11 2017-01-24 Nxp Usa, Inc. Semiconductor device and related fabrication methods
KR102177431B1 (en) * 2014-12-23 2020-11-11 주식회사 키 파운드리 Semiconductor device
US10050115B2 (en) * 2014-12-30 2018-08-14 Globalfoundries Inc. Tapered gate oxide in LDMOS devices
JP6639290B2 (en) 2016-03-18 2020-02-05 キヤノン株式会社 Imaging device

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