SG10201805041XA - Image Sensor - Google Patents

Image Sensor

Info

Publication number
SG10201805041XA
SG10201805041XA SG10201805041XA SG10201805041XA SG10201805041XA SG 10201805041X A SG10201805041X A SG 10201805041XA SG 10201805041X A SG10201805041X A SG 10201805041XA SG 10201805041X A SG10201805041X A SG 10201805041XA SG 10201805041X A SG10201805041X A SG 10201805041XA
Authority
SG
Singapore
Prior art keywords
disposed
insulating layer
electrode
color filter
image sensor
Prior art date
Application number
SG10201805041XA
Inventor
Changhwa Kim
Sejung Park
Junghun Kim
Sangsu Park
Kyungrae BYUN
Beom Suk Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201805041XA publication Critical patent/SG10201805041XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different materials. [FIG. ] 50
SG10201805041XA 2017-07-21 2018-06-13 Image Sensor SG10201805041XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170092476A KR102495573B1 (en) 2017-07-21 2017-07-21 Image sensor

Publications (1)

Publication Number Publication Date
SG10201805041XA true SG10201805041XA (en) 2019-02-27

Family

ID=65023446

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201805041XA SG10201805041XA (en) 2017-07-21 2018-06-13 Image Sensor

Country Status (4)

Country Link
US (2) US10872927B2 (en)
KR (1) KR102495573B1 (en)
CN (1) CN109285848B (en)
SG (1) SG10201805041XA (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11205683B2 (en) 2019-06-12 2021-12-21 Samsung Electronics Co., Ltd. Image sensor

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US11843020B2 (en) 2017-10-30 2023-12-12 Samsung Electronics Co., Ltd. Image sensor
KR102542614B1 (en) 2017-10-30 2023-06-15 삼성전자주식회사 Image sensor
KR102498582B1 (en) * 2018-02-26 2023-02-14 에스케이하이닉스 주식회사 Image Sensor Including Partition Patterns
CN112041988A (en) * 2019-04-28 2020-12-04 深圳市大疆创新科技有限公司 Image sensor chip, manufacturing method, image sensor, and imaging device
US11189653B2 (en) 2019-09-17 2021-11-30 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with buffer layer and method of forming
US11705360B2 (en) 2021-03-10 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with dual trench isolation structure
CN113764439B (en) * 2021-09-08 2024-02-20 京东方科技集团股份有限公司 Optoelectronic integrated substrate, manufacturing method thereof and optoelectronic integrated circuit

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US7999291B2 (en) 2005-09-05 2011-08-16 Sony Corporation Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11205683B2 (en) 2019-06-12 2021-12-21 Samsung Electronics Co., Ltd. Image sensor

Also Published As

Publication number Publication date
US10872927B2 (en) 2020-12-22
CN109285848A (en) 2019-01-29
CN109285848B (en) 2024-04-16
KR102495573B1 (en) 2023-02-03
US11411052B2 (en) 2022-08-09
US20210104577A1 (en) 2021-04-08
US20190027539A1 (en) 2019-01-24
KR20190010136A (en) 2019-01-30

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