SG10201602785TA - E-beam enhanced decoupled source for semiconductor processing - Google Patents

E-beam enhanced decoupled source for semiconductor processing

Info

Publication number: SG10201602785TA
Authority: SG; Singapore
Prior art keywords: semiconductor processing; beam enhanced; decoupled source; decoupled; source
Prior art date: 2011-04-11

Application number

SG10201602785TA

Inventor

John Patrick Holland

Peter L G Ventzek

Harmeet Singh

Jun Shinagawa

Akira Koshiishi

Original Assignee

Lam Res Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-04-11

Filing date

2012-04-10

Publication date

2016-05-30

2011-04-11 Priority claimed from US13/084,325 external-priority patent/US20120258555A1/en

2011-05-10 Priority claimed from US13/104,923 external-priority patent/US8900402B2/en

2012-01-24 Priority claimed from US13/357,003 external-priority patent/US9177756B2/en

2012-01-24 Priority claimed from US13/356,962 external-priority patent/US9111728B2/en

2012-01-24 Priority claimed from US13/357,044 external-priority patent/US20120258607A1/en

2012-04-10 Application filed by Lam Res Corp filed Critical Lam Res Corp

2016-05-30 Publication of SG10201602785TA publication Critical patent/SG10201602785TA/en

Links

SG10201602785TA 2011-04-11 2012-04-10 E-beam enhanced decoupled source for semiconductor processing SG10201602785TA (en)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
US13/084,325 US20120258555A1 (en)	2011-04-11	2011-04-11	Multi-Frequency Hollow Cathode and Systems Implementing the Same
US13/104,923 US8900402B2 (en)	2011-05-10	2011-05-10	Semiconductor processing system having multiple decoupled plasma sources
US201161555639P	2011-11-04	2011-11-04
US13/357,003 US9177756B2 (en)	2011-04-11	2012-01-24	E-beam enhanced decoupled source for semiconductor processing
US13/356,962 US9111728B2 (en)	2011-04-11	2012-01-24	E-beam enhanced decoupled source for semiconductor processing
US13/357,044 US20120258607A1 (en)	2011-04-11	2012-01-24	E-Beam Enhanced Decoupled Source for Semiconductor Processing

Publications (1)

Publication Number	Publication Date
SG10201602785TA true SG10201602785TA (en)	2016-05-30

Family

ID=49919072

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
SG10201602780VA SG10201602780VA (en)	2011-04-11	2012-04-10	E-beam enhanced decoupled source for semiconductor processing
SG10201602785TA SG10201602785TA (en)	2011-04-11	2012-04-10	E-beam enhanced decoupled source for semiconductor processing
SG2013071790A SG193943A1 (en)	2011-04-11	2012-04-10	E-beam enhanced decoupled source for semiconductor processing

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
SG10201602780VA SG10201602780VA (en)	2011-04-11	2012-04-10	E-beam enhanced decoupled source for semiconductor processing

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
SG2013071790A SG193943A1 (en)	2011-04-11	2012-04-10	E-beam enhanced decoupled source for semiconductor processing

Country Status (4)

Country	Link
JP (2)	JP6001641B2 (en)
KR (1)	KR101900527B1 (en)
CN (1)	CN103620729B (en)
SG (3)	SG10201602780VA (en)

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CN105448635B (en) *	2014-08-28	2018-01-09	北京北方华创微电子装备有限公司	Atomic layer etching device and use its atomic layer lithographic method
US10475626B2 (en) *	2015-03-17	2019-11-12	Applied Materials, Inc.	Ion-ion plasma atomic layer etch process and reactor
US10032604B2 (en) *	2015-09-25	2018-07-24	Applied Materials, Inc.	Remote plasma and electron beam generation system for a plasma reactor
US20170092470A1 (en) *	2015-09-28	2017-03-30	Applied Materials, Inc.	Plasma reactor for processing a workpiece with an array of plasma point sources
US9799491B2 (en) *	2015-10-29	2017-10-24	Applied Materials, Inc.	Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
KR102455239B1 (en)	2017-10-23	2022-10-18	삼성전자주식회사	apparatus for processing plasma, manufacturing system of semiconductor device and manufacturing method of the same
TWI826998B (en) *	2018-07-27	2023-12-21	美商應用材料股份有限公司	Gas distribution apparatus and processing chamber for remote capacitively coupled plasma source with improved ion blocker
KR102661733B1 (en)	2018-07-31	2024-04-29	주성엔지니어링(주)	Apparatus for processing substrate using multiple plasma

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JPH0742592B2 (en) *	1985-11-29	1995-05-10	日本電信電話株式会社	Dry etching equipment
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2012
- 2012-04-10 SG SG10201602780VA patent/SG10201602780VA/en unknown
- 2012-04-10 KR KR1020137029903A patent/KR101900527B1/en active IP Right Grant
- 2012-04-10 CN CN201280018081.7A patent/CN103620729B/en active Active
- 2012-04-10 SG SG10201602785TA patent/SG10201602785TA/en unknown
- 2012-04-10 SG SG2013071790A patent/SG193943A1/en unknown
- 2012-04-10 JP JP2014505217A patent/JP6001641B2/en active Active
2016
- 2016-09-01 JP JP2016170419A patent/JP6271659B2/en active Active

Also Published As

Publication number	Publication date
SG193943A1 (en)	2013-11-29
CN103620729A (en)	2014-03-05
JP2014513427A (en)	2014-05-29
KR20140024375A (en)	2014-02-28
JP6271659B2 (en)	2018-01-31
SG10201602780VA (en)	2016-05-30
KR101900527B1 (en)	2018-09-19
JP2017022392A (en)	2017-01-26
JP6001641B2 (en)	2016-10-05
CN103620729B (en)	2016-10-12

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