FR2842387B1 - HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION - Google Patents

HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Info

Publication number
FR2842387B1
FR2842387B1 FR0208728A FR0208728A FR2842387B1 FR 2842387 B1 FR2842387 B1 FR 2842387B1 FR 0208728 A FR0208728 A FR 0208728A FR 0208728 A FR0208728 A FR 0208728A FR 2842387 B1 FR2842387 B1 FR 2842387B1
Authority
FR
France
Prior art keywords
implementation
etching method
heating shield
plasma engraving
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0208728A
Other languages
French (fr)
Other versions
FR2842387A1 (en
Inventor
Michel Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Alcatel Lucent SAS
Original Assignee
Alcatel CIT SA
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Alcatel SA filed Critical Alcatel CIT SA
Priority to FR0208728A priority Critical patent/FR2842387B1/en
Priority to US10/516,457 priority patent/US20050224178A1/en
Priority to PCT/FR2003/002156 priority patent/WO2004008477A2/en
Priority to EP03763950A priority patent/EP1523754A2/en
Priority to JP2004520754A priority patent/JP2005532693A/en
Publication of FR2842387A1 publication Critical patent/FR2842387A1/en
Application granted granted Critical
Publication of FR2842387B1 publication Critical patent/FR2842387B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
FR0208728A 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION Expired - Fee Related FR2842387B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0208728A FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION
US10/516,457 US20050224178A1 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
PCT/FR2003/002156 WO2004008477A2 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
EP03763950A EP1523754A2 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
JP2004520754A JP2005532693A (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor and etching method using heating jacket

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0208728A FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Publications (2)

Publication Number Publication Date
FR2842387A1 FR2842387A1 (en) 2004-01-16
FR2842387B1 true FR2842387B1 (en) 2005-07-08

Family

ID=29763738

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0208728A Expired - Fee Related FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Country Status (5)

Country Link
US (1) US20050224178A1 (en)
EP (1) EP1523754A2 (en)
JP (1) JP2005532693A (en)
FR (1) FR2842387B1 (en)
WO (1) WO2004008477A2 (en)

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US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
WO2009117565A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
SG10201602780VA (en) * 2011-04-11 2016-05-30 Lam Res Corp E-beam enhanced decoupled source for semiconductor processing
CN105957792A (en) * 2016-06-30 2016-09-21 上海华力微电子有限公司 Etching method of semiconductor structure
JP7422531B2 (en) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 Plasma processing equipment and plasma processing method

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US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
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Also Published As

Publication number Publication date
US20050224178A1 (en) 2005-10-13
FR2842387A1 (en) 2004-01-16
EP1523754A2 (en) 2005-04-20
WO2004008477A3 (en) 2004-04-08
JP2005532693A (en) 2005-10-27
WO2004008477A2 (en) 2004-01-22

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Effective date: 20120330