SG10201402882PA - Chamber wall of a plasma processing apparatus including a flowing protective liquid layer - Google Patents

Chamber wall of a plasma processing apparatus including a flowing protective liquid layer

Info

Publication number
SG10201402882PA
SG10201402882PA SG10201402882PA SG10201402882PA SG10201402882PA SG 10201402882P A SG10201402882P A SG 10201402882PA SG 10201402882P A SG10201402882P A SG 10201402882PA SG 10201402882P A SG10201402882P A SG 10201402882PA SG 10201402882P A SG10201402882P A SG 10201402882PA
Authority
SG
Singapore
Prior art keywords
plasma
chamber wall
processing apparatus
plasma processing
apparatus including
Prior art date
Application number
SG10201402882PA
Inventor
Singh Harmeet
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201402882PA publication Critical patent/SG10201402882PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32486—Means for reducing recombination coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

OF THE DISCLOSURE CHAMBER WALL OF A PLASMA PROCESSING APPARATUS INCLUDING A FLOWING PROTECTIVE LIQUID LA YER A semiconductor plasma processing apparatus includes a vacuum chamber in which semiconductor substrates are processed, a process gas sow-ce in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, and an RF energy source adapted to energize the process gas into the plasma state in the vacuum chamber. Thc apparatus can also include a chamber wall wherein the chamber wall includes a means for supplying a plasma compatible liquid to a plasma exposed surface thereof wherein the plasma compatible liquid flows over the plasma exposed surface thereby forming a flowing protective liquid layer thereon. A liquid supply delivers the plasma compatible liquid to the chamber wall. FIG.IA 31
SG10201402882PA 2013-06-04 2014-06-04 Chamber wall of a plasma processing apparatus including a flowing protective liquid layer SG10201402882PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/909,349 US20140357092A1 (en) 2013-06-04 2013-06-04 Chamber wall of a plasma processing apparatus including a flowing protective liquid layer

Publications (1)

Publication Number Publication Date
SG10201402882PA true SG10201402882PA (en) 2015-01-29

Family

ID=51985600

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201402882PA SG10201402882PA (en) 2013-06-04 2014-06-04 Chamber wall of a plasma processing apparatus including a flowing protective liquid layer

Country Status (6)

Country Link
US (1) US20140357092A1 (en)
JP (1) JP2014239220A (en)
KR (1) KR20140143114A (en)
CN (1) CN104217915A (en)
SG (1) SG10201402882PA (en)
TW (1) TW201513210A (en)

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US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
US10138378B2 (en) 2014-01-30 2018-11-27 Monolith Materials, Inc. Plasma gas throat assembly and method
US10100200B2 (en) 2014-01-30 2018-10-16 Monolith Materials, Inc. Use of feedstock in carbon black plasma process
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
FI3100597T3 (en) 2014-01-31 2023-09-07 Monolith Mat Inc Plasma torch with graphite electrodes
JP6544902B2 (en) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 Plasma processing system
CN107709608B (en) * 2015-02-03 2019-09-17 巨石材料公司 Re-generatively cooled method and apparatus
EP3253827B1 (en) 2015-02-03 2024-04-03 Monolith Materials, Inc. Carbon black generating system
CN105986245A (en) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 Part and method for improving MOCVD reaction process
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
CA3032246C (en) 2015-07-29 2023-12-12 Monolith Materials, Inc. Dc plasma torch electrical power design method and apparatus
US10808097B2 (en) 2015-09-14 2020-10-20 Monolith Materials, Inc. Carbon black from natural gas
JP2017157778A (en) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 Substrate processing device
TWI550134B (en) * 2016-04-22 2016-09-21 台灣美日先進光罩股份有限公司 Method for plasma process and photomask plate
CA3211318A1 (en) 2016-04-29 2017-11-02 Monolith Materials, Inc. Torch stinger method and apparatus
CN109562347A (en) 2016-04-29 2019-04-02 巨石材料公司 Grain processing technique and the addition of the second heat of equipment
MX2019010619A (en) 2017-03-08 2019-12-19 Monolith Mat Inc Systems and methods of making carbon particles with thermal transfer gas.
CN110799602A (en) 2017-04-20 2020-02-14 巨石材料公司 Particle system and method
JP2018190783A (en) * 2017-04-28 2018-11-29 東京エレクトロン株式会社 Transport device and transport method
EP3700980A4 (en) 2017-10-24 2021-04-21 Monolith Materials, Inc. Particle systems and methods
JP7110076B2 (en) * 2018-11-29 2022-08-01 東京エレクトロン株式会社 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
WO2021007319A1 (en) * 2019-07-09 2021-01-14 Entegris, Inc. Porous carbonaceous vacuum chamber liners
US20220403509A1 (en) * 2021-06-17 2022-12-22 Tokyo Electron Limited Vacuum processing apparatus and oxidizing gas removal method
JP2023054909A (en) * 2021-10-05 2023-04-17 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method

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US4265932A (en) * 1979-08-02 1981-05-05 Hughes Aircraft Company Mobile transparent window apparatus and method for photochemical vapor deposition
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
US6139681A (en) * 1999-03-09 2000-10-31 Archimedes Technology Group, Inc. Plasma assisted process vessel cleaner
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US6890596B2 (en) * 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
US20050145341A1 (en) * 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
JP4996868B2 (en) * 2006-03-20 2012-08-08 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US20090288942A1 (en) * 2008-05-20 2009-11-26 Scott Arthur Cummings Particulate capture in a plasma tool
US20130098871A1 (en) * 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
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Also Published As

Publication number Publication date
CN104217915A (en) 2014-12-17
US20140357092A1 (en) 2014-12-04
KR20140143114A (en) 2014-12-15
JP2014239220A (en) 2014-12-18
TW201513210A (en) 2015-04-01

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