SG100658A1 - Dc or ac electric field business anneal - Google Patents
Dc or ac electric field business annealInfo
- Publication number
- SG100658A1 SG100658A1 SG200101933A SG200101933A SG100658A1 SG 100658 A1 SG100658 A1 SG 100658A1 SG 200101933 A SG200101933 A SG 200101933A SG 200101933 A SG200101933 A SG 200101933A SG 100658 A1 SG100658 A1 SG 100658A1
- Authority
- SG
- Singapore
- Prior art keywords
- anneal
- electric field
- field business
- business
- electric
- Prior art date
Links
- 230000005684 electric field Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/04—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering with simultaneous application of supersonic waves, magnetic or electric fields
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/538,309 US6274465B1 (en) | 2000-03-30 | 2000-03-30 | DC electric field assisted anneal |
US09/809,887 US6552411B2 (en) | 2000-03-30 | 2001-03-16 | DC or AC electric field assisted anneal |
Publications (1)
Publication Number | Publication Date |
---|---|
SG100658A1 true SG100658A1 (en) | 2003-12-26 |
Family
ID=27065778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200101933A SG100658A1 (en) | 2000-03-30 | 2001-03-26 | Dc or ac electric field business anneal |
Country Status (6)
Country | Link |
---|---|
US (1) | US6822311B2 (zh) |
EP (1) | EP1139394A3 (zh) |
JP (1) | JP3914396B2 (zh) |
CN (1) | CN1319135C (zh) |
SG (1) | SG100658A1 (zh) |
TW (1) | TW503485B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006006526A1 (ja) * | 2004-07-09 | 2006-01-19 | Sekisui Chemical Co., Ltd. | 基材外周処理方法及び装置 |
JP4992424B2 (ja) * | 2004-08-06 | 2012-08-08 | 住友電気工業株式会社 | p型半導体領域を形成する方法 |
JP5495920B2 (ja) * | 2010-04-23 | 2014-05-21 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
CN103268858B (zh) * | 2013-05-13 | 2015-11-18 | 华南师范大学 | 一种近红外光电硅材料的制备方法 |
CN103258912B (zh) * | 2013-05-13 | 2016-04-13 | 华南师范大学 | 一种微构造硅雪崩二极管的制备方法 |
CN111333348A (zh) * | 2020-03-10 | 2020-06-26 | 醴陵旗滨电子玻璃有限公司 | 化学强化方法、化学强化装置和化学强化玻璃 |
US11894240B2 (en) * | 2020-04-06 | 2024-02-06 | Tokyo Electron Limited | Semiconductor processing systems with in-situ electrical bias |
US11335792B2 (en) | 2020-04-06 | 2022-05-17 | Tokyo Electron Limited | Semiconductor processing system with in-situ electrical bias and methods thereof |
US20210367046A1 (en) * | 2020-04-06 | 2021-11-25 | Tokyo Electron Limited | Semiconductor manufacturing platform with in-situ electrical bias and methods thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671845A (en) * | 1985-03-22 | 1987-06-09 | The United States Of America As Represented By The Secretary Of The Navy | Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby |
JPS63138741A (ja) * | 1986-12-01 | 1988-06-10 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体基板のアニ−ル装置 |
JPH0621064A (ja) * | 1992-07-06 | 1994-01-28 | Seiko Epson Corp | 半導体装置の製造方法 |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
JPH09232532A (ja) * | 1996-02-22 | 1997-09-05 | Toshiba Corp | 強誘電体メモリの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60224272A (ja) * | 1984-04-20 | 1985-11-08 | Nec Corp | 絶縁基板mis型電界効果トランジスタの製造方法 |
JPH04280425A (ja) | 1991-03-07 | 1992-10-06 | Sony Corp | 配線形成方法 |
US5279976A (en) | 1991-05-03 | 1994-01-18 | Motorola, Inc. | Method for fabricating a semiconductor device having a shallow doped region |
KR100309934B1 (ko) | 1992-06-24 | 2002-06-20 | 구사마 사부로 | 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 |
US5412242A (en) | 1993-04-14 | 1995-05-02 | Yeda Research And Development Co., Ltd. | Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction |
US5463244A (en) | 1994-05-26 | 1995-10-31 | Symetrix Corporation | Antifuse programmable element using ferroelectric material |
US5729094A (en) | 1996-04-15 | 1998-03-17 | Massachusetts Institute Of Technology | Energetic-electron emitters |
KR100527207B1 (ko) | 1996-05-08 | 2005-11-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 도펀트 확산을 가로막도록 생성된 격자간 변화도를 이용한접합 깊이 및 채널 길이의 제어 |
US6033587A (en) * | 1996-09-20 | 2000-03-07 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma |
CN100481242C (zh) * | 1998-07-28 | 2009-04-22 | Lg电子株式会社 | 用于缺陷管理信息的数据结构 |
US6185355B1 (en) | 1998-09-01 | 2001-02-06 | Henry H. Hung | Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices |
US6623865B1 (en) * | 2000-03-04 | 2003-09-23 | Energenius, Inc. | Lead zirconate titanate dielectric thin film composites on metallic foils |
US6274465B1 (en) | 2000-03-30 | 2001-08-14 | International Business Machines Corporataion | DC electric field assisted anneal |
-
2001
- 2001-03-26 EP EP01302786A patent/EP1139394A3/en not_active Withdrawn
- 2001-03-26 SG SG200101933A patent/SG100658A1/en unknown
- 2001-03-28 TW TW090107395A patent/TW503485B/zh not_active IP Right Cessation
- 2001-03-29 JP JP2001095081A patent/JP3914396B2/ja not_active Expired - Fee Related
- 2001-03-29 CN CNB011121580A patent/CN1319135C/zh not_active Expired - Fee Related
-
2003
- 2003-04-15 US US10/413,301 patent/US6822311B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671845A (en) * | 1985-03-22 | 1987-06-09 | The United States Of America As Represented By The Secretary Of The Navy | Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby |
JPS63138741A (ja) * | 1986-12-01 | 1988-06-10 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体基板のアニ−ル装置 |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
JPH0621064A (ja) * | 1992-07-06 | 1994-01-28 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH09232532A (ja) * | 1996-02-22 | 1997-09-05 | Toshiba Corp | 強誘電体メモリの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1323061A (zh) | 2001-11-21 |
JP2001319888A (ja) | 2001-11-16 |
EP1139394A2 (en) | 2001-10-04 |
CN1319135C (zh) | 2007-05-30 |
TW503485B (en) | 2002-09-21 |
US20030201515A1 (en) | 2003-10-30 |
EP1139394A3 (en) | 2006-02-15 |
JP3914396B2 (ja) | 2007-05-16 |
US6822311B2 (en) | 2004-11-23 |
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