SG100658A1 - Dc or ac electric field business anneal - Google Patents

Dc or ac electric field business anneal

Info

Publication number
SG100658A1
SG100658A1 SG200101933A SG200101933A SG100658A1 SG 100658 A1 SG100658 A1 SG 100658A1 SG 200101933 A SG200101933 A SG 200101933A SG 200101933 A SG200101933 A SG 200101933A SG 100658 A1 SG100658 A1 SG 100658A1
Authority
SG
Singapore
Prior art keywords
anneal
electric field
field business
business
electric
Prior art date
Application number
SG200101933A
Other languages
English (en)
Inventor
W Ballantine Arne
J Ellis-Monaghan John
Furukawa Toshiharu
R Miller Glenn
Albert Slinkman James
D Gilbert Jeffery
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/538,309 external-priority patent/US6274465B1/en
Application filed by Ibm filed Critical Ibm
Publication of SG100658A1 publication Critical patent/SG100658A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/04—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering with simultaneous application of supersonic waves, magnetic or electric fields

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SG200101933A 2000-03-30 2001-03-26 Dc or ac electric field business anneal SG100658A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/538,309 US6274465B1 (en) 2000-03-30 2000-03-30 DC electric field assisted anneal
US09/809,887 US6552411B2 (en) 2000-03-30 2001-03-16 DC or AC electric field assisted anneal

Publications (1)

Publication Number Publication Date
SG100658A1 true SG100658A1 (en) 2003-12-26

Family

ID=27065778

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200101933A SG100658A1 (en) 2000-03-30 2001-03-26 Dc or ac electric field business anneal

Country Status (6)

Country Link
US (1) US6822311B2 (zh)
EP (1) EP1139394A3 (zh)
JP (1) JP3914396B2 (zh)
CN (1) CN1319135C (zh)
SG (1) SG100658A1 (zh)
TW (1) TW503485B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006526A1 (ja) * 2004-07-09 2006-01-19 Sekisui Chemical Co., Ltd. 基材外周処理方法及び装置
JP4992424B2 (ja) * 2004-08-06 2012-08-08 住友電気工業株式会社 ｐ型半導体領域を形成する方法
JP5495920B2 (ja) * 2010-04-23 2014-05-21 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
CN103268858B (zh) * 2013-05-13 2015-11-18 华南师范大学 一种近红外光电硅材料的制备方法
CN103258912B (zh) * 2013-05-13 2016-04-13 华南师范大学 一种微构造硅雪崩二极管的制备方法
CN111333348A (zh) * 2020-03-10 2020-06-26 醴陵旗滨电子玻璃有限公司 化学强化方法、化学强化装置和化学强化玻璃
US11894240B2 (en) * 2020-04-06 2024-02-06 Tokyo Electron Limited Semiconductor processing systems with in-situ electrical bias
US11335792B2 (en) 2020-04-06 2022-05-17 Tokyo Electron Limited Semiconductor processing system with in-situ electrical bias and methods thereof
US20210367046A1 (en) * 2020-04-06 2021-11-25 Tokyo Electron Limited Semiconductor manufacturing platform with in-situ electrical bias and methods thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671845A (en) * 1985-03-22 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
JPS63138741A (ja) * 1986-12-01 1988-06-10 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板のアニ−ル装置
JPH0621064A (ja) * 1992-07-06 1994-01-28 Seiko Epson Corp 半導体装置の製造方法
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
JPH09232532A (ja) * 1996-02-22 1997-09-05 Toshiba Corp 強誘電体メモリの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224272A (ja) * 1984-04-20 1985-11-08 Nec Corp 絶縁基板ｍｉｓ型電界効果トランジスタの製造方法
JPH04280425A (ja) 1991-03-07 1992-10-06 Sony Corp 配線形成方法
US5279976A (en) 1991-05-03 1994-01-18 Motorola, Inc. Method for fabricating a semiconductor device having a shallow doped region
KR100309934B1 (ko) 1992-06-24 2002-06-20 구사마 사부로 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법
US5412242A (en) 1993-04-14 1995-05-02 Yeda Research And Development Co., Ltd. Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction
US5463244A (en) 1994-05-26 1995-10-31 Symetrix Corporation Antifuse programmable element using ferroelectric material
US5729094A (en) 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
KR100527207B1 (ko) 1996-05-08 2005-11-09 어드밴스드 마이크로 디바이시즈, 인코포레이티드 도펀트 확산을 가로막도록 생성된 격자간 변화도를 이용한접합 깊이 및 채널 길이의 제어
US6033587A (en) * 1996-09-20 2000-03-07 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
CN100481242C (zh) * 1998-07-28 2009-04-22 Lg电子株式会社 用于缺陷管理信息的数据结构
US6185355B1 (en) 1998-09-01 2001-02-06 Henry H. Hung Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices
US6623865B1 (en) * 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
US6274465B1 (en) 2000-03-30 2001-08-14 International Business Machines Corporataion DC electric field assisted anneal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671845A (en) * 1985-03-22 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
JPS63138741A (ja) * 1986-12-01 1988-06-10 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板のアニ−ル装置
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
JPH0621064A (ja) * 1992-07-06 1994-01-28 Seiko Epson Corp 半導体装置の製造方法
JPH09232532A (ja) * 1996-02-22 1997-09-05 Toshiba Corp 強誘電体メモリの製造方法

Also Published As

Publication number Publication date
CN1323061A (zh) 2001-11-21
JP2001319888A (ja) 2001-11-16
EP1139394A2 (en) 2001-10-04
CN1319135C (zh) 2007-05-30
TW503485B (en) 2002-09-21
US20030201515A1 (en) 2003-10-30
EP1139394A3 (en) 2006-02-15
JP3914396B2 (ja) 2007-05-16
US6822311B2 (en) 2004-11-23

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