SE9603738D0 - A method for producing a bipolar semiconductor device and a bipolar semiconductor device - Google Patents

A method for producing a bipolar semiconductor device and a bipolar semiconductor device

Info

Publication number
SE9603738D0
SE9603738D0 SE9603738A SE9603738A SE9603738D0 SE 9603738 D0 SE9603738 D0 SE 9603738D0 SE 9603738 A SE9603738 A SE 9603738A SE 9603738 A SE9603738 A SE 9603738A SE 9603738 D0 SE9603738 D0 SE 9603738D0
Authority
SE
Sweden
Prior art keywords
layer
semiconductor device
region
bipolar semiconductor
producing
Prior art date
Application number
SE9603738A
Other languages
English (en)
Inventor
Willy Hermansson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9603738A priority Critical patent/SE9603738D0/sv
Publication of SE9603738D0 publication Critical patent/SE9603738D0/sv
Priority to US08/742,937 priority patent/US5814546A/en
Priority to PCT/SE1997/001614 priority patent/WO1998016951A1/en
Priority to DE69739516T priority patent/DE69739516D1/de
Priority to EP97945131A priority patent/EP0931336B1/en
Priority to JP51824398A priority patent/JP4364945B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
SE9603738A 1996-10-14 1996-10-14 A method for producing a bipolar semiconductor device and a bipolar semiconductor device SE9603738D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9603738A SE9603738D0 (sv) 1996-10-14 1996-10-14 A method for producing a bipolar semiconductor device and a bipolar semiconductor device
US08/742,937 US5814546A (en) 1996-10-14 1996-11-01 Method for producing a bipolar semiconductor device having SiC-based epitaxial layer
PCT/SE1997/001614 WO1998016951A1 (en) 1996-10-14 1997-09-25 A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
DE69739516T DE69739516D1 (de) 1996-10-14 1997-09-25 Verfahren zur herstellung von einer bipolaren siliziumkarbidbauelement und siliziumkarbidbauelement
EP97945131A EP0931336B1 (en) 1996-10-14 1997-09-25 A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
JP51824398A JP4364945B2 (ja) 1996-10-14 1997-09-25 バイポーラ半導体素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9603738A SE9603738D0 (sv) 1996-10-14 1996-10-14 A method for producing a bipolar semiconductor device and a bipolar semiconductor device
US08/742,937 US5814546A (en) 1996-10-14 1996-11-01 Method for producing a bipolar semiconductor device having SiC-based epitaxial layer

Publications (1)

Publication Number Publication Date
SE9603738D0 true SE9603738D0 (sv) 1996-10-14

Family

ID=26662773

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9603738A SE9603738D0 (sv) 1996-10-14 1996-10-14 A method for producing a bipolar semiconductor device and a bipolar semiconductor device

Country Status (3)

Country Link
US (1) US5814546A (sv)
SE (1) SE9603738D0 (sv)
WO (1) WO1998016951A1 (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003512725A (ja) 1999-10-20 2003-04-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置、この半導体装置の製造方法およびこの半導体装置が設けられた回路
US6242288B1 (en) * 2000-05-05 2001-06-05 International Rectifier Corp. Anneal-free process for forming weak collector
DE10048351A1 (de) * 2000-09-29 2002-05-08 Siemens Ag Körper aus Halbleitermaterial für ein Halbleiterbauelement und Verfahren zu seiner Herstellung
US6501099B2 (en) * 2001-03-05 2002-12-31 The United States Of America As Represented By The Secretary Of The Army Modified-anode gate turn-off thyristor
US6849874B2 (en) 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
US6900477B1 (en) 2001-12-07 2005-05-31 The United States Of America As Represented By The Secretary Of The Army Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
US20030236287A1 (en) * 2002-05-03 2003-12-25 Piotrowski David W. Positive allosteric modulators of the nicotinic acetylcholine receptor
DE102005046707B3 (de) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP6706786B2 (ja) 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
JP6703915B2 (ja) 2016-07-29 2020-06-03 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法、半導体装置および半導体装置の製造方法
JP7181520B2 (ja) 2018-06-25 2022-12-01 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
JP2650730B2 (ja) * 1988-08-08 1997-09-03 シャープ株式会社 炭化珪素半導体を用いたｐｎ接合型発光ダイオード
JPH03171777A (ja) * 1989-11-30 1991-07-25 Toshiba Corp 半導体装置
US5281831A (en) * 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device

Also Published As

Publication number Publication date
WO1998016951A1 (en) 1998-04-23
US5814546A (en) 1998-09-29

Similar Documents

Publication Publication Date Title
CN1322564C (zh) 硅锗双极型晶体管
SE9603738D0 (sv) A method for producing a bipolar semiconductor device and a bipolar semiconductor device
WO1998052230A3 (en) Silicongermanium semiconductor device and a method of manufacturing the same
KR100725689B1 (ko) 헤테로 바이폴러 트랜지스터
EP1101841A3 (en) Substrate for epitaxy of III-V compounds and a method for producing the same
US5326992A (en) Silicon carbide and SiCAlN heterojunction bipolar transistor structures
CA2311061A1 (en) Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan
WO1997036317A3 (en) A method for producing a semiconductor device having semiconductor layers of sic by the use of an implanting step and a device produced thereby
KR970051984A (ko) 화합물 반도체의 에피텍시 성장방법
US6967144B1 (en) Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base
JP2806537B2 (ja) ヘテロ接合バイポーラトランジスタ
JP2002158232A (ja) ヘテロバイポーラトランジスタ
US6680497B1 (en) Interstitial diffusion barrier
KR100754561B1 (ko) 컷오프 주파수가 향상된 실리콘 게르마늄 트랜지스터
JPS6191959A (ja) ヘテロ接合型トランジスタ
CN1238884C (zh) 提高n型硅原位掺杂载流子浓度的方法
JP2639041B2 (ja) バラクタダイオードの製造方法
JPS6421990A (en) Manufacture of semiconductor light-emitting device
JPS5696860A (en) Semiconductor device
JPS6459956A (en) Heterostructure bipolar transistor and manufacture thereof
JPS60138968A (ja) 半導体素子の製造方法
JPH0451973B2 (sv)
JPS55160459A (en) Semiconductor integrated circuit
JPS6489373A (en) Semiconductor device
JPH0766452A (ja) 半導体発光素子およびその製造方法